CN103681391A - IC chip jointing method - Google Patents
IC chip jointing method Download PDFInfo
- Publication number
- CN103681391A CN103681391A CN201310254988.XA CN201310254988A CN103681391A CN 103681391 A CN103681391 A CN 103681391A CN 201310254988 A CN201310254988 A CN 201310254988A CN 103681391 A CN103681391 A CN 103681391A
- Authority
- CN
- China
- Prior art keywords
- chip
- head portion
- base material
- projection
- electrically conducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
Abstract
An IC chip joint method has high contact reliability with substrate wiring; a thermosetting and anisotropic conductive bonding layer is formed between bosses of the IC chip and patterns of the substrate; an upper-lower head can clamp the IC chip and the substrate, so the IC chip and the substrate can be heated, pressed and connected; the upper-lower head comprises an upper head configured on an upper side of the IC chip and capable of moving in an upper-lower direction and provided with a heating portion, and a lower head configured on a lower side of the substrate and provided with a heating portion and capable of moving in an upper-lower direction; the jointing method of the IC chip comprises: a carrying step, and the bosses of the IC chip is arranged on the patterns of the substrate coated with the conductive bonding agent; a preheating step (S16b, S16c), when the IC chip is loaded, the upper head contacts with the IC chip or the lower head contacts with the substrate, and the coated conductive bonding agent is preheated under a solidification temperature; a jointing step (S22), after the preheating step, the IC chip is clamped by the upper-lower head for being pressed, and the temperate rises up to the solidification temperature of the conductive bonding agent.
Description
Technical field
The present invention relates to the IC chip for RFID label etc., relate in particular to the joint method of IC chip and base material wiring.
Background technology
RFID label be widely used as utilizing electric wave with non-contacting mode with take the subminiature element that external equipment that read write line is representative carries out information exchange.RFID label is installed to article etc., carries out (for example, patent documentation 1) such as identifications of article by the information relevant with these article to external equipment exchange.
The inner structure part of this RFID label (access part) has following structure: on the wiring substrate of antenna pattern that is provided with electric wave communication use, the IC chip that is built-in with circuit has been installed, and this circuit communicates via this antenna pattern and external equipment as described above.
RFID label is expected for the individual identification means that substitute bar code etc., for the requirement of circulating in society on a large scale can be a large amount of and inexpensive manufacture access part.
This antenna pattern carries out with being electrically connected to of antenna pattern with the splicing ear (projection) being connected by being arranged at IC chip side of IC chip.
Antenna pattern has two kinds.A kind of, main stacked rolled metal paper tinsel (being mainly Al, Cu) and base material (being mainly PET film, pen film, paper), and form shape through etching work procedure.Another kind is, the conductive paste that contains conducting particles (being mainly Ag, Cu) in binding agent (resin medium) is printed onto and on base material, forms shape.
Wherein, etching A1 the antenna of manufacturing can manufacture a large amount of and inexpensively and conductor resistance value less, be therefore used for greatly RFID label.
As the electrically connected method of projection and antenna pattern, the so-called bond technology (patent documentation 2) that is known to that IC chip is pressed into antenna and bonding agent hot curing is adhered.But the surface of A1 antenna is easily oxidized, this oxide-film is electrical insulator, therefore need to puncture this dielectric film and be connected with IC chip.
Therefore,, in bond technology, use anisotropically conducting adhesive as bonding agent.By using anisotropically conducting adhesive, the conducting particles being dispersed in bonding agent is clamped between projection and antenna, only in the direction sandwiching, conduct electricity thus.
Figure 17 is the figure of the effect of the anisotropically conducting adhesive in explanation bond technology.Figure 17 dissects the layer of the bonding agent 30 that is formed between the projection 18 of IC chip 12 and the antenna pattern 16 of base material 14 and the schematic diagram that obtains.
By 14 pressurizations of 12 pairs of base materials of IC chip when bonding, conducting particles 32 is clamped between projection 18 and antenna pattern 16, thereby projection 18 is electrically connected to antenna pattern 16.This bonding agent has conductivity in y direction, does not have conductivity in x direction, is therefore known as anisotropically conducting adhesive.
In bond technology, the performance of conducting particles by its kind, shape and amount left and right, especially the dielectric film for A1 antenna adopts Ni(nickel mostly) conducting particles.
But, when using bond technology, even in the situation that be clamped into the negligible amounts of the conducting particles between projection and antenna pattern, also likely produce bad connection.In addition, the base material of RFID label thickness soft and that antenna connects up is mostly thinner, and therefore, in the inappropriate situation of press pressure, when pressing IC chip, antenna pattern is out of shape, thereby near projection central authorities, produces the part growth encourage bad connection of not contact.
Based on this reason, in the situation that use bond technology in having used the RFID label of A1 antenna pattern, be not easy to guarantee the high reliability of contact.
On the other hand, as the joining technique beyond bond technology, also proposed to utilize the joint of hyperacoustic A1 antenna.In for example patent documentation 3 and patent documentation 4,, by IC chip is applied to ultrasonic wave, obtain the good bond between A1 antenna pattern and projection.In ultrasonic wave engages, thereby be known to make bump material Au, can realize the good technology being connected with the alloy-layer of antenna material A1.
Figure 18 is the table of the feature that engages with ultrasonic wave of comparison pressure welding joint.As the table shows, pressure welding joint engages and compares with ultrasonic wave, and the time of technique (operation output) is short, therefore easily improves production capacity.In addition, pressure welding engages with the ultrasonic wave that needs special installation and engages and compare, also favourable aspect equipment cost.On the other hand, the present situation that pressure welding engages is that, aspect the reliability of contact, it is slightly poor to compare with ultrasonic wave joint.
That is, as long as pressure welding engages the reliability can improve contact, can say for needs inexpensive/the RFID label manufacture of batch production is excellent technique.
[patent documentation 1] TOHKEMY 2000-311226 communique
[patent documentation 2] Japanese kokai publication hei 6-232204 communique
[patent documentation 3] TOHKEMY 2001-156110 communique
[patent documentation 4] TOHKEMY 2005-166012 communique
About the manufacture of RFID label etc., the aspect of inexpensive/batch production that pressure welding is bonded on is excellent technique, therefore, in order to utilize more widely, need to improve the reliability of its contact.
Summary of the invention
The present invention in view of the above problems, provides the joint method of the IC chip that contact reliability a kind of and base material wiring is high.
In order to achieve the above object, a kind of joint method of IC chip is provided, between the projection of described IC chip and the pattern of base material, form heat curing-type and anisotropic electrically conducting adhesive layer, by upper head portion, clipping described IC chip and base material heats and pressurizes and their are engaged, described upper head portion is by being disposed at the upside of described IC chip and the head portion with heating part that can move at above-below direction, form with the head portion with heating part that is disposed at the downside of described base material and can move at above-below direction, the joint method of described IC chip is characterised in that, comprise: carry operation, on the pattern of described base material that is coated with described electrically conducting adhesive, carry the projection of described IC chip, preheating procedure, after described IC chip Da Load, makes described head portion contact described IC chip or make described head portion contact described base material, with the temperature below described curing temperature, the electrically conducting adhesive of described coating is carried out to preheating, and bonding process, after described preheating procedure, by described upper head portion, clip and pressurize, be heated to the described curing temperature of described electrically conducting adhesive.
According to the present invention, can provide the joint method of the IC chip that contact reliability a kind of and base material wiring is high.
Accompanying drawing explanation
Fig. 1 is the equivalent electric circuit of connection mode.
Fig. 2 is the figure of the bonding process of the antenna pattern 16 that IC chip 12 is joined to base material 14 that direction is observed from the side.
Fig. 3 is for being described in detail in the figure of situation of the action of the upper head portion shown in Fig. 2 (E).
Fig. 4 is the preheating that explanation execution mode 1-1(utilizes head portion 70) figure.
Fig. 5 is the figure of example of the adsorption section 90 of the lower surface that is illustrated in base material 14 lower surface that is provided with adsorption substrates 14.
Fig. 6 is the preheating that explanation execution mode 1-2(utilizes head portion 80) figure.
Fig. 7 is the figure of example that the adsorption section 90 of the lower surface that is provided with adsorption substrates 14 is shown.
Fig. 8 is the figure that another example of adsorption section 90 is shown.
Fig. 9 is the figure after execution mode 1-1 and the engagement step of execution mode 1-2 and the step of existing mode are compared.
Figure 10 is the figure of relation that schematically illustrates the amount of the conducting particles 32 catching opportunity according to the heat/pressure of upper head portion.
Figure 11 dissects to be formed at the schematic diagram that is provided with the layer of the antenna pattern 16 of pit 16a and the bonding agent 30 between projection 18 and obtains.
Figure 12 is that the pit 16a of the antenna pattern 16 to producing partly amplifies and the photo that obtains.
Figure 13 is the instrumentation data at A～A' section place of the pit 16a of Figure 12.
Figure 14 is the schematic diagram of the catching mode of conducting particles 32 in situation about illustrating after combination the 1st execution mode and the 2nd execution mode, in junction surface.
Figure 15 is the table that an example of the material for testing is shown.
Figure 16 is the table of result that the reliability test of juncture based on present embodiment and existing juncture is shown.
Figure 17 is the figure of the effect of the bonding agent in explanation bond technology.
Figure 18 is the table of the feature that engages with ultrasonic wave of comparison pressure welding joint.
Label declaration
10: access part; 12:IC chip; 14: base material; 16: antenna pattern; 16a: pit; 18: projection; 30: bonding agent; 32: conducting particles; 50: distributor; 60: assembly parts; 70: head portion; 80: head portion; 90: adsorption section.
Embodiment
Below, according to accompanying drawing explanation embodiments of the present invention.In the following embodiments, about engaging of IC chip and pattern, by carry out the RFID(Radio Frequency Identification of information exchange between non-contacting mode and external equipment: radio-frequency (RF) identification) label is enumerated as object lesson and describes.
In addition,, in this technical field, also should " RFID label " be called " Wireless IC tag ", " contactless IC tag " etc.In addition, in this manual the inner structure part of RFID label (being specifically connected with the parts of IC chip on antenna) is called to access part.Sometimes also this access part is called to " inlay ", " transponder " etc.
Fig. 1 is the equivalent electric circuit of connection mode.This equivalent electric circuit has carried out modelling to projection 18 with contacting of antenna pattern 16.The contact resistance of projection 18 and antenna pattern 16 roughly by based on being connected of conducting particles 32 left and right.Therefore, the contact reliability of the amount of sandwiching of conducting particles (hereinafter to be referred as making seizure amount) left and right bond technology.That is, can measure by increasing seizure, improve contact reliability.
The size of this seizure amount is not only engaged operation, certainly also by the property effect of bonding agent self.This is because the improvement by the amount in conducting particles particle diameter and bonding agent may increase seizure and measure.In following present embodiment, about the situation of utilizing joint technology (bonding process) to increase seizure amount, describe.
In addition, the general heat curing-type bonding agent (being mainly epoxies, polyesters) that mostly adopts single fluidity in the bond technology that has used anisotropically conducting adhesive, the contained conducting particles of bonding agent is mostly Au(gold), Ni(nickel), Ag(Silver), Pd(palladium), Cu(copper).In the following description, as bonding agent, the anisotropically conducting adhesive of heat curing-type of above-mentioned single fluidity of take is described as typical example.In addition, below in order simplifying, to be simply expressed as bonding agent, and the medium composition of bonding agent to be expressed as to resin.
[the 1st execution mode]
The 1st execution mode comes to life by bonding agent 30 being carried out to the preheating resin flows producing that makes to heat, and low speed pressurization when IC chip join, and the seizure amount that realizes thus conducting particles improves.Below, the process that bonding agent 30 is heated to the active temperature of resin flows is called " preheating ", the operation of carrying out preheating is called to " preheating procedure ".
Fig. 2 is a part for manufacturing process and the figure of the IC chip bonding device 1 that direction is observed from the side of the access part 10 of RFID.IC chip bonding device 1 is the device of a series of bonding processs that carries out IC chip 12 to join to the antenna pattern 16 of base material 14.In addition,, by engaging (or mounting) on base material 14, there are the parts of IC chip 12 to be called access part.
Bonding process, from figure (A) to figure (F), is from left to right carried out in order.In addition, under the so-called mother metal state of base material 14 before the access part 10 being split into one by one, be carrier state elongated on left and right directions.On the surface of base material 14, by continuous antenna patterns 16 that forms such as etch processes.
Fig. 2 (A) illustrates the base material 14 that is formed with antenna pattern 16.Base material 14 is for example the PET film that tens μ m are thick.Antenna pattern 16 is equivalent to the antenna of RFID, for example, be the wiring pattern of A1 system.
Fig. 2 (B) illustrates the operation of carrying base material 14 and applying bonding agent 30 on the antenna pattern 16 of base material 14.From being disposed at the distributor 50 on base material 14 tops, appropriate bonding agent 30 is coated to antenna pattern 16.
Fig. 2 (C) illustrates IC chip 12 mountings to the operation that is coated with the base material 14 of bonding agent 30.Assembly parts 60 absorption IC chips 12, are transported to the position of base material 14, and IC chip 12 are placed on base material 14.Lower surface at IC chip 12 is provided with the projection 18 as splicing ear.This projection 18 is placed into the mode of the antenna pattern 16 that is coated with bonding agent 30, IC chip 12 is placed on base material 14.
Fig. 2 (D) illustrates and finishes the base material 14(access part 10 that bonding agent applies operation and will place IC chip 12) be transported to the operation of next heat/pressure operation.
Fig. 2 (E) illustrates the operation (below also referred to as heat/pressure operation) of carrying out heat/pressure by upper head portion to being placed with the base material 14 of IC chip 12.In upper head portion, be assembled with heating part.In IC chip bonding device 1, by the device that carries out heat/pressure also referred to as head device.
Head device clips IC chip 12 and base material 14 and heats and pressurize and engage, between the projection 18 of IC chip 12 and the pattern of base material 14, be formed with the layer of bonding agent 30, this head device has upper head portion, and on this, head portion consists of the upside in IC chip 12 and the head portion with heating part 70 that can move at above-below direction and the downside in base material and the head portion with heating part 80 that can move at above-below direction.
By head portion 70 and head portion 80 are moved up in p side respectively, any one in head portion 70 or head portion 80 first contacts, and bonding agent 30 is carried out to preheating.After preheating, the base material 14 that is placed with IC chip 12 is clamped between head portion 70 and head portion 80, projection 18 is heated in antenna pattern 16 pressurized (pressing), thus bonding agent 30 solidifies.The details of upper and lower headwork is by aftermentioned.
Fig. 2 (F) illustrates bonding agent 30 and solidifies and have the base material 14 of IC chip 12 to be transported to the operation of ensuing other processing joint.
Fig. 3 is for being described in detail in the figure of the operation shown in Fig. 2 (E).In utilization, the heat/pressure operation of head portion is carried out according to the order of operation El, operation E2, operation E3, operation F.
Although not shown, IC chip bonding device 1 has controls the operation of above-mentioned Fig. 2 and below by the control part of the operation after Fig. 3 of explanation.Control part has pipage control portion, assembling control part and head control part etc.
Pipage control portion controls the conveying of base material 14.Assembling control part is controlled IC chip 12 in the lift-launch of base material 14.Head control part is controlled the movement of head portion and preheating, pressurization, heating in head device.
In addition,, in head device, on the path separately of upper head portion, be provided with position transducer.The signal of head control part detection position transducer, by controlling the drive motors of mobile upper head portion, the position of head portion and translational speed in control.
In addition,, in head device, be provided with to contact or non-contacting mode detects the temperature sensor of the temperature of contact-making surface or the surface temperature of access part 10 of head.Head control part, according to the output of this temperature sensor, is controlled the heating part that is arranged at respectively head portion.
In addition, in head device, be also provided with pressure sensor.Head control part is adjusted the plus-pressure of head portion 70 according to the output of pressure sensor.
Operation E1 illustrates following operation: the base material 14 that is placed with IC chip 12 is transported to and utilizes upper head portion to carry out the position of heat/pressure.Head portion 70 and head portion 80 are moved to respectively to upper and lower retreating position, base material 14 is transported to head device.
Operation E2 illustrates following operation: head portion 70 and head portion 80 move up in p side respectively, is sandwiching up and down the base material 14 that is placed with IC chip 12, and bonding agent 30 is carried out to pressurization and/or heating.
In addition, head portion 70 is controlled as when declining speed to be scheduled to and predetermined plus-pressure pressurizes to IC chip 12.In addition, head portion 80 is controlled as the position that stops at predefined position, contacts with the lower surface of base material 14 from retreating position rises.
By utilizing the heat/pressure of upper head portion, bonding agent 30 solidifies and joins IC chip 12 to base material 14.Herein, be not to carry out the opportunity that contacts of head portion 70 and head portion 80 simultaneously, and be provided with the time difference.In addition, the contact of the pressurization and/or heating of upper head portion has two kinds opportunity, with Fig. 4～Fig. 7, is elaborated.
Operation E3 illustrates following operation: finish to utilize the heat/pressure of head portion, head portion 70 and head portion 80 are moved up in q side respectively and keep out of the way from IC chip 12 etc.Operation F is identical with Fig. 2 (F), and therefore description thereof is omitted.
As mentioned above, the principal character of the 1st execution mode is, before main solidifying, bonding agent 30 is preheating to after the temperature of resin flows, and low speed pressurizes.
Its mechanism of simple declaration.When IC chip 12 carries (operation of Fig. 2 (D)), between projection 18 and antenna pattern 16, there is more conducting particles 32.But, using head portion when IC chip 12 is pressurizeed, extrude the resin under projection 18, produce the resin flows to projection 18 outsides, conducting particles 32 also flows out to catching range outer (outside of projection 18) together.
And while heating under this state, projection 18 engages under the state of the seizure amount minimizing of conducting particles 32 with antenna pattern 16.Therefore,, for the seizure amount of conducting particles 32 is not reduced, consider following two means.
1) because conducting particles 32 is larger than the density of resin, thus conducting particles 32 to compare Resin Flow also lower.At pressing speed, faster in situation, flowing of resin is also very fast, therefore thinks that, due to this force and velocity of a current, conducting particles 32 is also flushed out to the outside of projection 18.If slow down pressing speed, to think because the force and velocity of a current of resin is less, the conducting particles 32 of going out projection 18 outsides also tails off.
Therefore,, if pressing speed is made as to low speed, can reduce the conducting particles 32 in projection 18 outsides, the seizure amount of increase projection 18 inside gone out.
2) secondly, in the situation that the viscosity of resin is higher, the situation low with viscosity compared, and thinks and makes the power that conducting particles 32 moves become large, and the conducting particles 32 of going out projection 18 outsides also increases.That is,, if the mobility of resin self can be improved when pressurization, can reduce the conducting particles 32 of going out projection 18 outsides.
The heat curing-type bonding agent of single fluidity possesses the character of for example, when being heated to certain temperature (, take 110 ℃ as peak value is from 90 ℃ to 130 ℃) resin self mobile (state for example seething with excitement as water).Therefore,, in when pressurization, can, by bonding agent 30 being preheating near the temperature that mobility uprises, reduce the amount that flows out to the conducting particles 32 outside catching range.
Fig. 4 is the preheating that explanation execution mode 1-1(utilizes head portion 70) figure.Fig. 4 (A) thus be that head portion 70 contacts with the upper surface of IC chip 12 operation that bonding agent 30 has been carried out to preheating.In addition, being made as head portion is heated all the time.
In execution mode 1-1, position by the elevated height of IC chip 12 and base material 14 to close head portion, after head portion 70 contacts with declining, IC chip 12 and base material 14 are declined with the speed identical with head portion 70, risen and first wait for head portion 80 clampings in precalculated position before during in carry out preheating.
Fig. 4 (A) is the state that is equivalent to the operation E1 of Fig. 3.In execution mode 1-1, on IC chip bonding device 1, be provided with base material reciprocating mechanism (not shown).Base material reciprocating mechanism moves up and down base material 14 in the front and back of pressurization and/or heating operation.Base material reciprocating mechanism is transferred control part and controls.
After head portion 70 contacts with IC chip 12, base material 14 also synchronously declines maintaining under the state contacting with the decline of head portion 70 in p direction.Under this state, do not pressurize.In addition, expectation decrease speed is the low speed below 5.0mm/sec for example.
Under the state being preheated at bonding agent 30, head portion 70 and base material 14 declines, and the position (the pressing position h being shown in broken lines) that arrives head portion 80 at the lower surface of base material 14 is located, and base material travel mechanism stops declining., adjust in advance and control the temperature of the heating part of decrease speed and head portion 70 herein, make the temperature of bonding agent 30 before base material 14 contacts with head portion 80 become the temperature (for example 90 ℃ to 130 ℃) that produces resin flows.In addition, the temperature that produces resin flows is called to resin flows temperature.
Fig. 4 (B) is illustrated in after head portion 70 and base material 14 declines, and access part 10 is by the figure of the situation of upper head portion heat/pressure.
After base material 14 contacts with head portion 80, bonding agent 30, except the heating from head portion 70, is also heated by head portion 80 across base material 14, thereby rises to curing temperature.
In addition,, after base material 14 contacts with head portion 80, also start the pressurization from head portion 70.Even pressurizeed by head portion 70, the position of head portion 80 is also maintained at pressing position h.And after the scheduled time, upper and lower head moves to keeping out of the way direction respectively, and finishes heat/pressure operation.
Fig. 5 is the figure of example of the adsorption section 90 of the lower surface that is illustrated in base material 14 lower surface that is provided with adsorption substrates 14.Thereby being lower surfaces of being arranged at the surrounding of described head portion 80 adsorption substrates 14, adsorption section 90 prevents from being included in the parts of the distortion of base material 14 in head device.Decline together with base material 14, by base material reciprocating mechanism, is being hankered in advance in adsorption section 90.
Therefore, when making head portion 70 contact with IC chip 12 for preheating, heat may be passed to base material 14, thereby base material 14 carries out thermal deformation.When base material 14 carries out uncertain movement (distortion, deflection) due to thermal deformation, because IC chip 12 is in loose state still, so the loading position of IC chip may depart from.
Therefore, in the lower surface setting example of base material 14, as the adsorption section 90 being formed by vacuum adsorption mechanism, suppress the thermal deformation of base material between above-mentioned warming up period, prevent the position deviation of IC chip 12.
Fig. 6 is the preheating that explanation execution mode 1-2(utilizes head portion 80) figure.In the situation that using head portion 80 to carry out preheating, do not make to access and on the position of part 10, rise and make it remain on pressing position h.In addition, being made as head portion is heated all the time.
Fig. 6 (A) is the figure that the state of the first contact substrate 14 of head portion 80 is shown.Under this state, head portion 70, in declining, not yet contacts with IC chip 12.The state of keeping out of the way from upper head portion (the operation E1 of Fig. 3), only head portion 70 low speed decline, and with the head portion 80 of common speed rising, first contact with base material 14.Utilizing hankering in advance of head portion 80, head portion 70 continues low speed and declines.
Adjust in advance the temperature of the decrease speed of head portion 70 and the heating part of head portion 80, make the temperature of bonding agent 30 before head portion 70 contacts with IC chip 12 because the heating from head portion 80 becomes resin flows temperature.
Fig. 6 (B) illustrates by the head portion 70 after declining to clamp the figure that accesses parts 10 and carry out the state of pressurization and/or heating.Heating is undertaken by upper head portion two sides, and pressurization is undertaken by head portion 70.Bonding agent 30 is heated to curing temperature, thereby solidifies.
In Fig. 5, also illustrate, but base material 14 may the thermal deformation due to preheating.The in the situation that of execution mode 1-2, base material 14 is carried out preheating by head portion 80, so the possibility of base material 14 further thermal deformations is high.Therefore,, in execution mode 1-2, in order to prevent thermal deformation, also expectation arranges the adsorption section 90 of the lower surface of adsorption substrates 14.
Fig. 7 is the figure of example that the adsorption section 90 of the lower surface that is provided with adsorption substrates 14 is shown.Head portion 80 is arranged to impale around in adsorption section 90, and adsorption section 90 is controlled by head control part, synchronously to move up and down with head portion 80.Or adsorption section 90 can be in the surrounding of head portion 80 to install with the integrated mode of head portion 80.
Fig. 8 is the figure that another example of adsorption section 90 is shown.Following example: the upper surface in head portion 80 is installed the adsorption section 90 consisting of Porous (porous) material, carries out vacuum suction.The heating of bonding agent 30 is undertaken by the adsorption section 90 consisting of porous material.
Fig. 9 is the figure that execution mode 1-1 and the engagement step of execution mode 1-2 and the step of existing mode are compared.Herein, the steps such as bonding agent 30 coatings corresponding with operation (A), (B), (C) of Fig. 2 do not have king-sized difference, therefore omits, to utilizing the step of the heat/pressure of upper head portion to compare.
The flow process on the left side shown in Fig. 9 is existing step, and the flow process of central authorities is steps of execution mode 1-1, and the flow process on the right is the step of execution mode 1-2.
First, from existing mode, describe.Access part 10 is transported to head (step S10), upper head portion starting (step S12), thus upper head portion contacts (step S16a) with access part 10.Head portion 70 roughly contacts access part 10 with head portion 80 simultaneously, and access part 10 is sandwiched up and down.
After the scheduled time, upper head portion is kept out of the way (step S24), and carries access part 10(step S26).Access part 10 after joint is removed from the head, and the access part 10 that next will engage is transported to head (step S10).
Then, execution mode 1-1 is described.Access part 10 is transported to head (step S10).In this situation, as explanation in Fig. 4 (A), access part 10 moves to the position higher than pressing position h, and is transported to head.
Upper head portion starting (step S12).The decline degree of sending of head portion 70 reduces (step S14), head portion 70 slow decreasings.The translational speed expectation of head portion 70 is for below 5.0mm/sec.
The heating of the head portion 70 in declining by utilization, bonding agent 30 becomes the state (step S18) of resin flows.In the decline of head portion 70, head portion 80 rises, and waits at pressing position h.The access part 10 declining together with head portion 70 contacts (step S20b) with head portion 80.
Then, execution mode 1-2 is described.Access part 10 is transported to head (step S10).In execution mode 1-2, do not make to access part 10 and move up.Upper head portion starting (step S12).The Speed Reduction of head portion 70 (step S14).Therefore, head portion 80 fast rising, head portion 80 contacts (step S16c) with the base material 14 of access part 10.Thus, utilize the preheating of head portion 80 to make bonding agent 30 resin flows (step S18).In addition,, if be provided with adsorption section 90 in head portion 80, start the absorption of base material 14.
Figure 10 is the figure of relation that schematically illustrates the amount of the conducting particles 32 catching opportunity according to the heat/pressure of upper head portion.The left hurdle of Figure 10 is the shorter example of time difference of " condition 1 " and heating and pressurization.The central hurdle of Figure 10 is the example of " condition 2 " and execution mode 1-1 and 1-2.The right hurdle of Figure 10 is time difference of " condition 3 " and heating and pressurization example when longer." condition 1 " is with corresponding in existing mode illustrated in fig. 9.
In addition, the curve chart in the stage casing of Figure 10 illustrates temperature under each condition, bonding agent 30 with respect to the example of the variation of the time of contact of upper head portion.Hypomere is projection based on each condition 18 with the profile of antenna pattern 16 and schematically shows the seizure amount of engagement state.
From condition 1, start explanation.For example, shown in curve chart, for example, after the shorter situation of time difference that heating starts to start with pressurization is contacting of head (head portion 70) a side, the situation that (for example, in 0.3sec) the opposing party's head (head portion 80) contacts at short notice.Go up head portion which first contact and all there is no large difference.
By this pressurization, due to the bonding agent 30 of the high state of viscosity, conducting particles 32 also can flow out to catching range outer (outside of projection 18).Its result as shown in the figure of the engagement state of Figure 10 condition 1, can not catch the conducting particles 32 of q.s between projection 18 and antenna pattern 16.
Otherwise " condition 3 " is that heating starts the long situation of time difference starting with pressurization.For example, be to have contacted after the long time (for example, more than 2sec) in head portion 80, the situation of head portion 70 contacts.
While utilizing heating time of head portion 80 long before pressurization, only the heating by head portion 80 is solidified bonding agent 30.That is,, as shown in the figure of the engagement state of " condition 3 ", between projection 18 and antenna pattern 16, separate under the state in gap and engage.That is, even there is conducting particles 32 between projection 18 and antenna pattern 16, by conducting particles 32, be not electrically connected to yet, thereby become loose contact state.
On the other hand, in " condition 2 ", as mentioned above, any one in using head portion starts pressurization after being preheated to and becoming resin flows temperature., become the roughly moment of 90 ℃ to 130 ℃ herein, making another head contact, carrying out heat/pressure.
The time difference of head contact is for example 1.5sec left and right.The time of preheating being according to the adding heating power etc. of the curing characteristics of bonding agent 30, the access shape of part 10 and upper head portion and different, therefore tests in advance etc. to set.
Therefore under the state that has produced resin flows, start pressurization, think that the conducting particles 32 of going out projection 18 outsides due to the force and velocity of a current of resin tails off.And, to think by the pressing speed that slows down, the force and velocity of a current of resin diminishes, and the conducting particles 32 of going out projection 18 outsides becomes still less.
Thus, as shown in the figure of the engagement state of " condition 2 ", between projection 18 and antenna pattern 16, can catch the conducting particles 32 of q.s.
In addition, in explanation before, composition theory understands the situation of " starting pressurization after reaching resin flows temperature " and the situation of " speed of pressurization is carried out with low speed ".But, even any one party only also should be able to improve the effect that catches conducting particles 32, therefore can be carried out separately by any one.
[the 2nd execution mode]
The 2nd execution mode is the mode of pit that is formed for increasing the seizure amount of conducting particles 32 in antenna pattern 16.
Figure 11 dissects to be formed at the schematic diagram that is provided with the layer of the antenna pattern 16 of pit 16a and the bonding agent 30 between projection 18 and obtains.With reference to Figure 11, the situation of utilizing pit 16a to increase the conducting particles 32 catching is described.
Figure 11 (A) is after bonding agent 30 applies and the state before pressurization.The state corresponding with Fig. 2 (D).Antenna pattern 16 fully separates with projection 18, has a plurality of conducting particless 32 between them.
Figure 11 (B) illustrates the state that access part 10 has been carried out to low speed pressurization.By pressurization, bonding agent 30 escapes to the outside of projection 18, but a part for conducting particles 32 is stacked to be stuck in the first-class mode of the wall of pit 16a.
Then, after pressurization finishes, do not compare with there is no the situation of pit, owing to having increased the conducting particles 32(Figure 11 (C) that is laminated in pit 16a), so antenna pattern 16 becomes less with the contact resistance of projection 18.
The assembly parts that for the IC chip bonding device 1 of the 2nd execution mode are IC chip bonding device 1 that the 1st execution mode with explanations such as Fig. 2, Fig. 3 is used add the device after pressing mechanism.Assembly parts, by pressing mechanism, make 14 pressurizations of 12 pairs of base materials of IC chip, thereby on the surface of pattern, form the pit of the projection 18 based on IC chip 12.In addition, in the control part of IC chip bonding device 1, be also provided with the stressed assembly parts pressurized control of control portion.
The pit 16a of antenna pattern 16, by the pressurization of assembly parts, is set up in the operation of Fig. 2 (C).When carrying IC chip 12, IC chip 12 is pressurized to produce the load of pit degree in antenna.
A1 wiring is soft with respect to projection 18, therefore can, by carrying out local pressurization, form pit 16a in antenna pattern 16.In addition, antenna pattern 16 is non-elastic materials, and the pit of therefore giving can not replied yet.
In addition, by using projection 18 that antenna pattern is directly out of shape, the pit with projection 18 approximate same size can be made, stacking conducting particles can be when engaging, sandwiched reliably.
According to experiment, if with 50N/mm
2(=50MPa) above power is pressurizeed, and the temperature of antenna pattern 16 in room temperature to the scope below the glass transition point of base material 14, can confirm that pit centres is out of shape to become protruding mode.In addition, illustrate as a comparison, the pressure of the head portion 70 in execution mode 1 is 10～25N/mm
2left and right.
In addition, the stressed upper limit depends on thickness, the size of IC chip 12, front end size of the keeper of IC chip 12 etc. and changing, but for example in experiment, can confirm 120N/mm
2time no problem.
Figure 12 is that the pit 16a of the antenna pattern 16 to producing partly amplifies and the photo that obtains.Figure 13 is the shape data at A～A' section place of the pit 16a of Figure 12.Transverse axis represents the position of the horizontal direction of pit 16a, and the longitudinal axis represents the degree of depth of pit 16a.Known according to Figure 12, Figure 13, in the central authorities of pit 16a, be also formed with the part 16b of protuberance slightly.
By antenna pattern 16 is out of shape like this, can realize the stacking of conducting particles, and can not produce gap at projection central part.
In addition, form after pit 16a in the operation of Fig. 2 (C), due to the small bonding force of assembly parts and the buoyancy of bonding agent, projection 18 does not become the state of being close to pit 16a, and becomes the state floating slightly from pit 16a.That is,, after pressurization, between projection 18 and pit 16a, guaranteed to be enough to exist the gap of conducting particles 32.Therefore the in the situation that of, can there is not conducting particles 32 between projection 18 and pit 16a, do not engage.
In addition, the access part 10 that IC chip bonding device 1 by the 2nd execution mode is manufactured is following access parts: " on the antenna pattern of base material; by pressurizeing and form pit being coated with projection on the antenna pattern of electrically conducting adhesive carrying; the part at projection enters under the state of pit, is pressurizeed and is engaged by heating ".
[the 1st execution mode+2nd execution mode]
Then, illustrate the example after the processing of the 2nd execution mode combination the 1st execution mode.The 1st execution mode is relevant to the opportunity of the heat/pressure of upper head portion, therefore can combine the 2nd execution mode.In addition, execution mode 1-1 and execution mode 1-2 all can combine the 2nd execution mode.
In addition, processing to the 2nd execution mode combination the 1st execution mode can realize in the following way: the assembly parts 60 of the IC chip bonding device 1 shown in Fig. 2 are appended pressing mechanism and control part is appended to assembly parts pressurized control portion, in the operation of Fig. 2 (C), IC chip 12 is pressurizeed to base material 14 with the pressure of being scheduled to, thereby on the surface of pattern, form the pit of the projection 18 based on IC chip 12.
Figure 14 is the schematic diagram of the catching mode of conducting particles 32 in situation about illustrating after combination the 1st execution mode and the 2nd execution mode, in junction surface.Figure 14 (A) illustrate in head portion any one contact with access part 10, thereby bonding agent 30 between projection 18 and pit 16a has been carried out to the state that heats.It is the state of resin flows that produced due to heating between projection 18 and the pit 16a of antenna pattern 16.Corresponding with the operation of the step S18 of Fig. 9.
Figure 14 (B) illustrates the state that head portion 70 low speed are declined.Corresponding with the operation of the step S22 of Fig. 9.By resin flows and low speed, can reduce the amount of the conducting particles 32 in the outside that escapes to projection 18, increase the seizure amount of conducting particles 32.The seizure that in addition, can further increase by the effect of pit 16a conducting particles 32 is measured.
Figure 14 (C) has sandwiched the state of conducting particles 32 after being illustrated in joint between projection 18 and pit 16a.Utilize these three effects of resin flows, low speed and pit, the conducting particles 32 of seizure increases.
Figure 15, Figure 16 illustrate the table that the result of access part 10 reliability tests of existing juncture and present embodiment is compared.In addition, the material of the bonding agent shown in example and conducting particles etc. is an example, even other materials and shape also can be applied to present embodiment.
Figure 15 is the table that an example of the material for testing is shown.Bonding agent 30 is epoxies list fluidity heat curing-types.The material of conducting particles 32 is Ni.The size of IC chip 12 is 0.5 * 0.5mm.The material of projection 18 is Au.The material of base material 14 is PET.
Figure 16 is the table of result that the reliability test of juncture based on present embodiment and existing juncture is shown.In addition, in this reliability test, by combine the 2nd execution mode in execution mode 1-1, carried out the access part 10 of joint as the sample of present embodiment.According to the juncture of present embodiment, than existing, the seizure quantitative change of conducting particles 32 is about 2 times, and the fraction defective of thermal shock test is that fraction defective about 1/40, the test of hot and humid degree is about 1/50.As mentioned above, according to present embodiment, in to the pressure welding joint technology of A1 wiring, can access the joint method of high-reliability.
In the above-described embodiment, show the example that is applied to RFID label, even but other products, so long as comprise the product to the operation of pattern by IC chip join, such as small-sized information equipment, microchip, wrist-watch etc., just can apply present embodiment.
In addition, invention is not directly defined as above-mentioned execution mode, in the scope of purport that can be the implementation phase not departing from, structural element is out of shape and is specialized.In addition, can be by the various inventions of appropriately combined formation of the disclosed a plurality of structural elements of above-mentioned execution mode.For example, all structural elements shown in, can appropriately combined execution mode.And, structural element that can appropriately combined different execution modes.Like this, certainly, can carry out carrying out various distortion and application in the scope that does not depart from inventive concept.
Claims (20)
1. the joint method of an IC chip, between the projection of described IC chip and the pattern of base material, form heat curing-type and anisotropic electrically conducting adhesive layer, by upper head portion, clipping described IC chip and base material heats and pressurizes and their are engaged, described upper head portion consists of the head portion with heating part that is disposed at the upside of described IC chip and the head portion with heating part that can move at above-below direction and the downside that is disposed at described base material and can move at above-below direction, the joint method of described IC chip is characterised in that, comprises:
Carry operation, on the pattern of described base material that is coated with described electrically conducting adhesive, carry the projection of described IC chip;
Preheating procedure, after described IC chip Da Load, makes described head portion contact described IC chip or make described head portion contact described base material, with the temperature below described curing temperature, the electrically conducting adhesive of described coating is carried out to preheating; And
Bonding process, after described preheating procedure, is clipped and is pressurizeed by described upper head portion, is heated to the described curing temperature of described electrically conducting adhesive.
2. the joint method of IC chip according to claim 1, is characterized in that,
In described preheating procedure, the temperature of described preheating is to make described electrically conducting adhesive produce the temperature of resin flows.
3. the joint method of IC chip according to claim 2, is characterized in that,
In described preheating procedure, the temperature that makes described electrically conducting adhesive produce resin flows is 90 ℃～130 ℃.
4. the joint method of IC chip according to claim 1, is characterized in that,
In described bonding process, after making described head portion rise in advance precalculated position, fix and make head portion decline to pressurize.
5. the joint method of IC chip according to claim 4, is characterized in that,
The decrease speed during pressurization of described head portion is below 5mm/sec.
6. the joint method of IC chip according to claim 4, is characterized in that,
In described preheating procedure, in the situation that making described head portion contact to carry out preheating with described IC chip, in advance by the position of the extremely close described head portion of the elevated height of described IC chip and described base material, after the head portion with declining contacts, described IC chip is declined with the speed identical with described head portion with described base material, in this decline, carry out described preheating.
7. the joint method of IC chip according to claim 1, is characterized in that,
In described preheating procedure, by being arranged at described head portion adsorption section around, adsorb the lower surface of described base material, to prevent the thermal deformation of described base material.
8. the joint method of IC chip according to claim 1, is characterized in that,
In described lift-launch operation, described IC chip is pressurizeed towards described base material, thereby make the patterned surfaces of described base material form the pit of the projection based on described IC chip.
9. the joint method of IC chip according to claim 8, is characterized in that,
The plus-pressure that described IC chip is pressurizeed towards described base material is more than 50MPa.
10. according to the joint method of the IC chip described in any one in claim 1～9, it is characterized in that,
Described IC chip is the IC chip that RFID label is used, and described pattern is antenna pattern.
The coupling device of 11. 1 kinds of IC chips, it clips described IC chip and base material and heats and pressurize and their are engaged, wherein between the projection of described IC chip and the pattern of base material, be formed with heat curing-type and anisotropic electrically conducting adhesive layer, the coupling device of described IC chip has upper head portion, described upper head portion is by the upside in described IC chip and the head portion with heating part that can move at above-below direction, form with the downside in described base material and the head portion with heating part that can move at above-below direction, the coupling device of described IC chip is characterised in that,
Described upper head portion is to the described IC chip carrying on the pattern of described base material that is coated with described electrically conducting adhesive, make described head portion contact described IC chip or make described head portion contact described base material, with the temperature below curing temperature, the electrically conducting adhesive of described coating is carried out to preheating, after this preheating, clip described IC chip and described base material and pressurize, and be heated to curing temperature.
The coupling device of 12. IC chips according to claim 11, is characterized in that,
Surrounding in described head portion possesses adsorption section, and the lower surface of described base material is adsorbed in described adsorption section when described preheating, to prevent the distortion of described base material.
The joint method of 13. 1 kinds of IC chips, between the projection of described IC chip and the pattern of base material, form heat curing-type and anisotropic electrically conducting adhesive layer, by upper head portion, clipping described IC chip and base material heats and pressurizes their are engaged, described upper head portion consists of the upside in described IC chip and the head portion that can move at above-below direction and the downside in described base material and the head portion that can move at above-below direction, the joint method of described IC chip is characterised in that
On the pattern of base material that is coated with described electrically conducting adhesive, place the projection of described IC chip;
IC chip to described placement pressurizes towards described base material, thereby on the surface of described pattern, forms the pit of the projection based on described IC chip.
The joint method of 14. IC chips according to claim 13, is characterized in that,
The plus-pressure that described IC chip is pressurizeed towards described base material is more than 50MPa.
The joint method of 15. IC chips according to claim 13, is characterized in that,
In described head portion and described head portion, possess respectively heating part,
By described projection, the surface at described pattern forms after pit, make described head portion contact described IC chip or make described head portion contact described base material, with the temperature below curing temperature, the electrically conducting adhesive of described coating is carried out to preheating,
After described preheating, by described upper head portion, clip and pressurize, and be heated to the curing temperature of described electrically conducting adhesive.
The joint method of 16. IC chips according to claim 15, is characterized in that,
Described, hanker in advance, the temperature of described preheating is to make described electrically conducting adhesive produce the temperature of resin flows.
The joint method of 17. IC chips according to claim 15, is characterized in that,
Described, hanker in advance, the temperature that makes described electrically conducting adhesive produce resin flows is 90 ℃～130 ℃.
18. according to the joint method of the IC chip described in any one in claim 13～17, it is characterized in that,
Described IC chip is the IC chip that RFID label is used, and described pattern is antenna pattern.
The coupling device of 19. 1 kinds of IC chips, it forms heat curing-type and anisotropic electrically conducting adhesive layer between the projection of described IC chip and the pattern of base material, by upper head portion, clipping described IC chip and base material heats and pressurizes their are engaged, described upper head portion consists of the upside in described IC chip and the head portion that can move at above-below direction and the downside in described base material and the head portion that can move at above-below direction, the coupling device of described IC chip is characterised in that
There are assembly parts, these assembly parts are placed into the projection of described IC chip on the pattern of the base material that is coated with described electrically conducting adhesive, described IC chip is pressurizeed towards described base material, with the surface at described pattern, form the pit of the projection based on described IC chip.
The access part of 20. 1 kinds of RFID labels, it is engaged and forms the antenna pattern of the projection of IC chip and base material by heat curing-type and anisotropic electrically conducting adhesive, and the access part of this RFID label is characterised in that,
On the antenna pattern of described base material, be formed with due to the pit that pressurizes and cause being coated with the described projection that carries on the antenna pattern of described electrically conducting adhesive,
The access part of described RFID label is that the part at described projection enters and under the state of described pit, is heated pressurization and engages.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012209653A JP5956297B2 (en) | 2012-09-24 | 2012-09-24 | IC chip bonding method |
| JPJP2012-209653 | 2012-09-24 | ||
| JP2012-209653 | 2012-09-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103681391A true CN103681391A (en) | 2014-03-26 |
| CN103681391B CN103681391B (en) | 2016-09-07 |
Family
ID=50318560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310254988.XA Active CN103681391B (en) | 2012-09-24 | 2013-06-25 | The joint method of IC chip |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5956297B2 (en) |
| CN (1) | CN103681391B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104166255A (en) * | 2014-09-02 | 2014-11-26 | 苏州欧菲光科技有限公司 | Assembling method of driving chip of liquid crystal display module |
| CN108476591A (en) * | 2015-06-16 | 2018-08-31 | 迪睿合株式会社 | Connector, the manufacturing method of connector, detection method |
| CN108630645A (en) * | 2017-03-17 | 2018-10-09 | 永道无线射频标签(扬州)有限公司 | A kind of connected structure and preparation method thereof of chip and antenna substrate |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016133982A (en) * | 2015-01-19 | 2016-07-25 | 富士通フロンテック株式会社 | Ic chip jointing method |
| SE541653C2 (en) | 2017-11-03 | 2019-11-19 | Stora Enso Oyj | Method for manufacturing an RFID tag and an RFID tag comprising an IC and an antenna |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006202806A (en) * | 2005-01-18 | 2006-08-03 | Matsushita Electric Ind Co Ltd | Crimping apparatus and crimping method |
| CN101097607A (en) * | 2006-06-30 | 2008-01-02 | 富士通株式会社 | RFID tag manufacturing methods and RFID tags |
| CN101156164A (en) * | 2005-09-26 | 2008-04-02 | 松下电器产业株式会社 | Noncontact information storage medium and method for manufacturing same |
| JP2008283055A (en) * | 2007-05-11 | 2008-11-20 | Seiko Epson Corp | Method of mounting flexible board and mounting apparatus for flexible board |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3483219B2 (en) * | 1994-04-18 | 2004-01-06 | 芝浦メカトロニクス株式会社 | Outer lead bonding equipment |
| JPH1187429A (en) * | 1997-05-09 | 1999-03-30 | Citizen Watch Co Ltd | Mounting method for semiconductor chip |
| JP4292760B2 (en) * | 2002-07-10 | 2009-07-08 | パナソニック株式会社 | Display panel processing method and processing apparatus |
| JP2004277573A (en) * | 2003-03-17 | 2004-10-07 | Sony Chem Corp | Adhesive and electric device |
| JP2007317563A (en) * | 2006-05-26 | 2007-12-06 | Sumitomo Electric Ind Ltd | Circuit connecting adhesive |
| JP5599680B2 (en) * | 2010-08-27 | 2014-10-01 | 富士フイルム株式会社 | Conductive bonding structure, mounting structure, and conductive bonding method |
-
2012
- 2012-09-24 JP JP2012209653A patent/JP5956297B2/en active Active
-
2013
- 2013-06-25 CN CN201310254988.XA patent/CN103681391B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006202806A (en) * | 2005-01-18 | 2006-08-03 | Matsushita Electric Ind Co Ltd | Crimping apparatus and crimping method |
| CN101156164A (en) * | 2005-09-26 | 2008-04-02 | 松下电器产业株式会社 | Noncontact information storage medium and method for manufacturing same |
| CN101097607A (en) * | 2006-06-30 | 2008-01-02 | 富士通株式会社 | RFID tag manufacturing methods and RFID tags |
| JP2008283055A (en) * | 2007-05-11 | 2008-11-20 | Seiko Epson Corp | Method of mounting flexible board and mounting apparatus for flexible board |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104166255A (en) * | 2014-09-02 | 2014-11-26 | 苏州欧菲光科技有限公司 | Assembling method of driving chip of liquid crystal display module |
| CN104166255B (en) * | 2014-09-02 | 2017-03-22 | 南昌欧菲显示科技有限公司 | Assembling method of driving chip of liquid crystal display module |
| CN108476591A (en) * | 2015-06-16 | 2018-08-31 | 迪睿合株式会社 | Connector, the manufacturing method of connector, detection method |
| CN108476591B (en) * | 2015-06-16 | 2021-01-01 | 迪睿合株式会社 | Connected body, method for producing connected body, and method for detecting connected body |
| CN108630645A (en) * | 2017-03-17 | 2018-10-09 | 永道无线射频标签(扬州)有限公司 | A kind of connected structure and preparation method thereof of chip and antenna substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103681391B (en) | 2016-09-07 |
| JP2014063965A (en) | 2014-04-10 |
| JP5956297B2 (en) | 2016-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103681391A (en) | IC chip jointing method | |
| CN1300180B (en) | Chip mounting, circuit board, data carrier and manufacture method thereof and electronic element assembly | |
| JP4479209B2 (en) | Electronic circuit device, method for manufacturing the same, and apparatus for manufacturing electronic circuit device | |
| US20070007344A1 (en) | RFID tag and manufacturing method thereof | |
| CN101385402B (en) | Circuit board and process for producing the same | |
| US20150161501A1 (en) | Chip card with contacting that is pasty or liquid at room temperature | |
| JP5155616B2 (en) | RFID tag, RFID system, and RFID tag manufacturing method | |
| US7960752B2 (en) | RFID tag | |
| JP2007042087A (en) | Rfid tag and production method therefor | |
| EP2296109B1 (en) | Dual interface IC card and method for producing such a card | |
| TWI284842B (en) | Communication medium capable of carrying out contactless communication and method of producing the same | |
| CN109583552B (en) | Method for producing a portable data carrier and data carrier body | |
| EP1947917B1 (en) | Manufacturing method of electronic device | |
| WO2000072254A1 (en) | Method for the production of a portable integrated circuit electronic device comprising a low-cost dielectric | |
| US20080173383A1 (en) | Method and apparatus for manufacturing electronic device | |
| WO2016107298A1 (en) | Molding packaged mini mobile phone intelligent card, and packing method | |
| CN113690149A (en) | Chip bonding structure, method and equipment | |
| MX2008012339A (en) | Methods for attaching a flip chip integrated circuit assembly to a substrate. | |
| KR100561123B1 (en) | Fabricating method for the radio frequency identification card | |
| JP4839668B2 (en) | Non-contact IC tag manufacturing method | |
| KR101031884B1 (en) | Method for manufacturing RFID tag and RFID tag using thereof | |
| JP2004013733A (en) | Non-contact data carrier and its manufacturing method | |
| KR100923943B1 (en) | Electronic device and method of manufacturing same | |
| JP2005070915A (en) | Composite ic card and its manufacturing method | |
| JP2004062635A (en) | Non-contact communication medium with external terminal |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |