CN103681200A - Liquid material plasma treating device - Google Patents
Liquid material plasma treating device Download PDFInfo
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- CN103681200A CN103681200A CN201310668285.1A CN201310668285A CN103681200A CN 103681200 A CN103681200 A CN 103681200A CN 201310668285 A CN201310668285 A CN 201310668285A CN 103681200 A CN103681200 A CN 103681200A
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- fluent material
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Abstract
The invention relates to a liquid material plasma treating device. The liquid material plasma treating device comprises a treating cavity and a plasma torch, wherein a liquid inlet is formed in the upper end of any side wall of the treating cavity, an air inlet is formed in the lower end of the side wall of the treating cavity, an air outlet is formed in the upper end of the corresponding side wall of the treating cavity, a liquid outlet is formed in the lower end of the of the corresponding side wall of the treating cavity, a gas distribution plate is horizontally arranged in the treating cavity, the liquid outlet, the air outlet and the liquid inlet are respectively formed above the gas distribution plate, the air inlet is formed below the gas distribution plate, and the head end of the plasma torch is connected with the air inlet. According to the liquid material plasma treating device, the plasma torch makes ionized reactant gas enter the lower portion of the treating cavity through the air inlet, then the ionized reactant gas enters the upper portion of the treating cavity through the gas distribution plate, the ionized reactant gas overflows through the air outlet after the treating cavity is filled with the ionized reactant gas, next, liquid materials are introduced into the upper portion of the treating cavity through the liquid inlet, the liquid materials are bubbled and the surfaces of the liquid materials are treated at the same time by the ionized reactant gas, and therefore the liquid materials are subjected to plasma treatment, treatment is made to be evener, and the effect is better.
Description
Technical field
The invention belongs to plasma processing apparatus field, relate in particular a kind of fluent material plasma processing apparatus.
Background technology
The ionized gas shape material that the positron-electron that atom after plasma is deprived of by portions of electronics and atom are ionized rear generation forms, it is extensively present in universe, is often considered to be and removes outside solid, liquid, gas, the 4th state that material exists.
At present, what plasma device was general is two electrodes to be set in airtight container form electric field, with vacuum pump, realize certain vacuum degree, along with gas is more and more thin, the free movement distance of intermolecular distance and molecule or ion is also more and more long, be subject to electric field action, they bump and form gas ions, the activity of these ions is very high, its energy is enough to destroy nearly all chemical bond, material surface in any exposure causes chemical reaction, thereby structure, composition and the group of material surface are changed, and is met the surface of actual requirement.Plasma reaction speed is fast, treatment effeciency is high, and modification occurs over just material surface, on the not impact of the performance of material internal bulk material, is desirable surface modification means.
Fluent material need to carry out the processing that plasma-activated reaction realizes fluent material surface, such as processing such as oily surface hydrophilics, and in prior art, do not have can be to fluent material plasma treatment device.
Therefore, need a kind of fluent material plasma processing apparatus badly.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, a kind of fluent material plasma processing apparatus is provided.
The technical scheme that realizes the object of the invention is: a kind of fluent material plasma processing apparatus, comprise process chamber and plasma torch, the arbitrary sidewall upper of described process chamber is provided with inlet, lower end is provided with air inlet, the corresponding sidewall upper of described process chamber is provided with gas outlet, lower end is provided with liquid outlet, in described process chamber, be horizontally disposed with gas distribution grid, described liquid outlet, described gas outlet and described inlet are arranged at respectively described gas distribution grid top, described air inlet is arranged at described gas distribution grid below, described plasma torch head end is connected with described air inlet.
Further, described process chamber is insulation processing chamber.
Further, described plasma torch comprises high frequency electric source, anode sleeve pipe and negative electrode, described negative electrode is arranged in the middle of described anode sleeve pipe, described anode sleeve pipe and negative electrode are connected respectively to the positive and negative electrode of high frequency electric source, between described anode sleeve pipe and described negative electrode, are provided with for reacting gas ionized gas reaction chamber.
Further, in described anode sleeve pipe, be also provided with water-cooled layer, described water-cooled layer comprises the channel layer being arranged in described anode sleeve pipe and extends the outer clip water-cooled layer that is arranged at described anode jacket tube head.
Further, described cathode end is provided with the insulating barrier that prevents described cathode end and described anode jacket tube discharge.
Further, the frequency range of described high frequency electric source is 10Khz-100Khz.
Further, also comprise that described cooler bin is connected with described gas outlet for the cooler bin of cooling reacting gas with for collecting the liquid collection case of fluent material, described liquid collection case one end is connected with described cooler bin, and the other end is connected with described inlet.
Further, also comprise the torus for circular treatment, described torus one end is connected with described liquid outlet, and the other end is connected with described inlet.
The present invention has positive effect: ionic medium spray gun body of the present invention enters process chamber bottom by the reacting gas after electric power from air inlet, then through gas distribution grid, enter process chamber top, after being full of process chamber, from gas outlet, overflow, from inlet, to process chamber top, pass into fluent material again, reacting gas limit after ionization is carried out surface treatment to fluent material bubbling limit to it, thereby realize fluent material plasma treatment, make processing more even, better effects if.
Accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation below, wherein:
Fig. 1 is the structural representation of first embodiment of the invention;
Fig. 2 is the structural representation of second embodiment of the invention;
Fig. 3 is the structural representation of third embodiment of the invention.
Wherein: 1, process chamber, 2, liquid outlet, 3, gas distribution grid, 4, gas outlet, 5, negative electrode, 6, gas reaction chamber, 7, inlet, 8, air inlet, 9, cooler bin, 10, liquid collection case, 11, outer clip water-cooled layer, 12, anode sleeve pipe, 13, channel layer, 14, torus.
Embodiment
As shown in Figure 1, as the first preferred embodiment, the present embodiment provides a kind of fluent material plasma processing apparatus, comprise process chamber 1 and plasma torch, process chamber 1 right side wall upper end is provided with inlet 7, lower end is provided with air inlet 8, process chamber 1 left side wall upper end is provided with gas outlet 4, lower end is provided with liquid outlet 2, in process chamber 1, be horizontally disposed with gas distribution grid 3, liquid outlet 2, gas outlet 4 and inlet 7 are arranged at respectively gas distribution grid 3 tops, and air inlet 8 is arranged at gas distribution grid 3 belows, and plasma torch head end is connected with air inlet 8.
The plasma torch of the present embodiment comprises high frequency electric source (not shown), anode sleeve pipe 12 and negative electrode 5, negative electrode 5 is arranged in the middle of anode sleeve pipe 12, anode sleeve pipe 12 and negative electrode 5 are connected respectively to the positive and negative electrode of high frequency electric source, between anode sleeve pipe 12 and negative electrode 5, are provided with for reacting gas ionized gas reaction chamber 6.
The high frequency electric source that in the present embodiment, proportion scope is 10Khz-100Khz, between high frequency electric source excitation anode sleeve pipe 12 and negative electrode 5, form electric field, reacting gas in gas reaction chamber 6 enters process chamber 1 bottom from air inlet 8 after ionizing under electric field, then through gas distribution grid 3, enter process chamber 1 top, being full of after process chamber 1 from gas outlet 4 overflows, from inlet 7, to process chamber top, pass into fluent material again, reacting gas limit after ionization is carried out surface treatment to fluent material bubbling limit to it, thereby realize fluent material plasma treatment, make to process more even, better effects if.
As shown in Figure 2, as the second preferred embodiment, all the other are identical with embodiment 1, difference is, the process chamber 1 that the present embodiment provides is insulation processing chamber, in anode sleeve pipe 12, be also provided with water-cooled layer, water-cooled layer comprises the channel layer 13 being arranged in anode sleeve pipe 12 and extends the outer clip water-cooled layer 11 that is arranged at anode sleeve pipe 12 heads, negative electrode 5 ends are provided with the insulating barrier (not shown) that prevents negative electrode 5 ends and 12 electric discharges of anode sleeve pipe, water-cooled layer can be lowered the temperature to the reacting gas after ionization, avoids reacting gas excess Temperature.
The present embodiment also comprises that cooler bin 9 is connected with gas outlet 4 for the cooler bin 9 of cooling reacting gas with for collecting the liquid collection case 10 of fluent material, and liquid collection case 10 one end are connected with cooler bin 9, and the other end is connected with inlet 7.
In the present embodiment, reacting gas can 4 overflow liquid material gasifying from gas outlet when to fluent material plasma treatment, cooler bin 9 by overflow gas cooled time the fluent material of vaporizing become liquid, enter in liquid collection case 10, from inlet 7, enter process chamber 1 and process again, avoided the waste of fluent material, more environmental protection.
Embodiment 3
As shown in Figure 3, as the 3rd preferred embodiment, all the other are identical with embodiment 1 or 2, difference is, the present embodiment also comprises the torus 14 for circular treatment, torus 14 one end are connected with liquid outlet 2, and the other end is connected with inlet 7, between torus 14 and liquid outlet 2, are also provided with water pump.In the present embodiment, increase torus 14 by the fluent material aftertreatment of processing, improve treatment effect.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (8)
1. a fluent material plasma processing apparatus, it is characterized in that, comprise process chamber and plasma torch, the arbitrary sidewall upper of described process chamber is provided with inlet, lower end is provided with air inlet, the corresponding sidewall upper of described process chamber is provided with gas outlet, lower end is provided with liquid outlet, in described process chamber, be horizontally disposed with gas distribution grid, described liquid outlet, described gas outlet and described inlet are arranged at respectively described gas distribution grid top, described air inlet is arranged at described gas distribution grid below, described plasma torch head end is connected with described air inlet.
2. fluent material plasma processing apparatus according to claim 1, is characterized in that, described process chamber is insulation processing chamber.
3. fluent material plasma processing apparatus according to claim 1, it is characterized in that, described plasma torch comprises high frequency electric source, anode sleeve pipe and negative electrode, described negative electrode is arranged in the middle of described anode sleeve pipe, described anode sleeve pipe and negative electrode are connected respectively to the positive and negative electrode of high frequency electric source, between described anode sleeve pipe and described negative electrode, are provided with for reacting gas ionized gas reaction chamber.
4. fluent material plasma processing apparatus according to claim 3, it is characterized in that, in described anode sleeve pipe, be also provided with water-cooled layer, described water-cooled layer comprises the channel layer being arranged in described anode sleeve pipe and extends the outer clip water-cooled layer that is arranged at described anode jacket tube head.
5. fluent material plasma processing apparatus according to claim 3, is characterized in that, described cathode end is provided with the insulating barrier that prevents described cathode end and described anode jacket tube discharge.
6. fluent material plasma processing apparatus according to claim 3, is characterized in that, the frequency range of described high frequency electric source is 10Khz-100Khz.
7. according to the arbitrary described fluent material plasma processing apparatus of claim 1-6, it is characterized in that, also comprise for the cooler bin of cooling reacting gas with for collecting the liquid collection case of fluent material, described cooler bin is connected with described gas outlet, described liquid collection case one end is connected with described cooler bin, and the other end is connected with described inlet.
8. according to the arbitrary described fluent material plasma processing apparatus of claim 1-6, it is characterized in that, also comprise the torus for circular treatment, described torus one end is connected with described liquid outlet, and the other end is connected with described inlet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310668285.1A CN103681200A (en) | 2013-12-11 | 2013-12-11 | Liquid material plasma treating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310668285.1A CN103681200A (en) | 2013-12-11 | 2013-12-11 | Liquid material plasma treating device |
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| CN103681200A true CN103681200A (en) | 2014-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310668285.1A Pending CN103681200A (en) | 2013-12-11 | 2013-12-11 | Liquid material plasma treating device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114040558A (en) * | 2021-11-09 | 2022-02-11 | 中国农业大学 | Plasma generator |
Citations (6)
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| CN1489426A (en) * | 2002-10-11 | 2004-04-14 | 杨易正 | Constant-pressure radio frequency cold plasma system and spray gun thereof |
| WO2008127135A1 (en) * | 2007-04-11 | 2008-10-23 | Olexandr Borisovich Zayika | Method for treating water and aqueous solutions by means of a gas-discharge plasma and a device for carrying out said method |
| CN101610632A (en) * | 2009-07-16 | 2009-12-23 | 倪国华 | The plasma torch that cooling agent and working gas annex |
| CN101948161A (en) * | 2010-08-27 | 2011-01-19 | 金俊哲 | Waste water treatment method and device by mixing water and vapor |
| CN103159287A (en) * | 2013-03-30 | 2013-06-19 | 山东大学 | Radial flow type DBD (Dielectric Barrier Discharge) thiamethoxam pesticide wastewater treatment equipment |
| CN203588973U (en) * | 2013-12-11 | 2014-05-07 | 苏州市奥普斯等离子体科技有限公司 | Liquid material plasma processing device |
-
2013
- 2013-12-11 CN CN201310668285.1A patent/CN103681200A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1489426A (en) * | 2002-10-11 | 2004-04-14 | 杨易正 | Constant-pressure radio frequency cold plasma system and spray gun thereof |
| WO2008127135A1 (en) * | 2007-04-11 | 2008-10-23 | Olexandr Borisovich Zayika | Method for treating water and aqueous solutions by means of a gas-discharge plasma and a device for carrying out said method |
| CN101610632A (en) * | 2009-07-16 | 2009-12-23 | 倪国华 | The plasma torch that cooling agent and working gas annex |
| CN101948161A (en) * | 2010-08-27 | 2011-01-19 | 金俊哲 | Waste water treatment method and device by mixing water and vapor |
| CN103159287A (en) * | 2013-03-30 | 2013-06-19 | 山东大学 | Radial flow type DBD (Dielectric Barrier Discharge) thiamethoxam pesticide wastewater treatment equipment |
| CN203588973U (en) * | 2013-12-11 | 2014-05-07 | 苏州市奥普斯等离子体科技有限公司 | Liquid material plasma processing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114040558A (en) * | 2021-11-09 | 2022-02-11 | 中国农业大学 | Plasma generator |
| CN114040558B (en) * | 2021-11-09 | 2023-03-14 | 中国农业大学 | Plasma generator |
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Application publication date: 20140326 |