CN103680961B - A kind of manufacture method of tantalum capacitor - Google Patents
A kind of manufacture method of tantalum capacitor Download PDFInfo
- Publication number
- CN103680961B CN103680961B CN201210320137.6A CN201210320137A CN103680961B CN 103680961 B CN103680961 B CN 103680961B CN 201210320137 A CN201210320137 A CN 201210320137A CN 103680961 B CN103680961 B CN 103680961B
- Authority
- CN
- China
- Prior art keywords
- tantalum
- minutes
- anode
- piece
- strengthening layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Chemical Treatment Of Metals (AREA)
Abstract
The manufacture method that the invention discloses a kind of tantalum capacitor, it comprises following steps: the preparation of (1) bonding agent, (2) make adhesive linkage, (3) preparation of strengthening layer suspension, (4) make strengthening layer, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product. the invention has the beneficial effects as follows: increase one deck adhesive linkage at strengthening layer and tantalum anode interblock, the contact resistance on strengthening layer and tantalum anode piece surface is reduced greatly, eliminate because of the bonding not firm factor of tantalum anode piece smooth surface and strengthening layer, loss value rate of change under high and low temperature environment of tantalum electrolytic capacitor is reduced more than 50%, thereby reducing contact resistance greatly, adhesive linkage improves the stability of product loss value, and it is simple to have technological operation, easy to control, be applicable to the feature of industrialized production, control difficulty and the production cost of production process are reduced.
Description
Technical field
The present invention relates to a kind of manufacture method of tantalum capacitor, belong to capacitor manufacturing technology field.
Background technology
The raw embryo of tantalum capacitor is molding in mold process, and the friction of its tantalum anode piece and mould inner wall makes tantalum anodePiece top layer micropore is destroyed and is become smooth, after add strengthening layer and the bond strength utmost point of tantalum anode piece in man-hourPoor, cause the loss of product in high low-temperature measurement process, to change greatly. Numerous tantalum capacitor manufacturer for this reasonCarry out a lot of research to how improving strengthening layer with the process of tantalum anode piece surface conjunction power, as takedDo not make strengthening layer directly the makes depanning raw embryo of tantalum piece by decomposition high concentration manganese nitrate, change forming die structureDo not produce the technologies such as friction with mould inner wall, if directly soak strengthening layer, because of the gas phase two in strengthening layerThe lower cementability of silica content is poor, only plays the effect that disperses manganese dioxide powder, makes strengthening layer and tantalum anodeThe contact resistance of interblock is larger. Under high temperature and low-temperature condition, this contact resistance variation rate greatly directly causes producingProduct loss value poor stability. The enforcement of these technology, has improved tantalum piece to a certain extent with between strengthening layerBond strength, but increased control difficulty and the production cost of production process simultaneously.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of tantalum capacitor, can eliminate because of tantalum anode piece surfaceSmooth and with the bonding not firm factor of strengthening layer, reduce loss variation with temperature rate, improve product loss valueStability, reduce control difficulty and the production cost of production process.
The object of the invention is to be achieved through the following technical solutions: a kind of manufacture method of tantalum capacitor,It comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 30～60% manganese nitrate solution, add nitric acid to adjust the PH of solution and be 1.5～4；
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 7～15 grams of aerosils, join in manganese nitrate solution;
D), stir after 10～15 minutes and leave standstill 8～12 hours in room temperature, eliminate the bubble in solution, treatWith;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 10～30Second, the height of immersion is 70～90% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 45～65 DEG C and dries 60～90 minutes;
C), to be put into temperature be in the saturated steam of 210～300 DEG C 3～8 minutes to anode tantalum piece, until positiveUtmost point tantalum piece surface obtains the adhesive linkage that thickness is 0.01～0.05mm;
(3) preparation of strengthening layer suspension:
A), getting 1000ml concentration is 50～70% manganese nitrate solution;
B), add the manganese dioxide powder of 80～240g, stir 30～60 minutes;
C), add aerosil 0.8～12g and stir 30～60 minutes;
D), room temperature leaves standstill stand-by after 12～24 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension 3～5 minutes, immersion heightConsistent with tantalum anode tile height;
B), take out anode tantalum piece and deposit after 30～60 minutes in room temperature, be put into 120～150 DEG C of oven for drying30～60 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 210～300 DEG C 3～8 minutes, untilThe layer that strengthened on adhesive linkage, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
Beneficial effect of the present invention is: increase one deck adhesive linkage at strengthening layer and tantalum anode interblock, make strengtheningLayer reduces greatly with the contact resistance on tantalum anode piece surface, content a larger increase of silica in adhesive linkagePart loss value, it is little that the loss value of this increase part is stablized temperature variant rate of change, eliminated because of tantalumAnode block smooth surface and with the bonding not firm factor of strengthening layer, the loss value that makes tantalum electrolytic capacitor is at heightUnder temperature environment, rate of change reduces more than 50%, has improved product damage thereby adhesive linkage reduces contact resistance greatlyThe stability of consumption value, and have the advantages that technological operation is simple, easy to control, be applicable to industrialized production,Control difficulty and the production cost of production process are reduced.
Brief description of the drawings
Fig. 1 is adhesive linkage of the present invention and tantalum anode piece surface binded schematic diagram;
Fig. 2 is the structure chart that the present invention increases the anode tantalum piece after adhesive linkage.
Wherein, 1-aerosil particle, 2-manganese dioxide particle, the tantalum anode piece surface that 3-is smooth,4-adhesive linkage, 5-strengthening layer.
Detailed description of the invention
Further describe technical scheme of the present invention below in conjunction with drawings and Examples, but claimed scopeDescribed in being not limited to.
Embodiment 1
A manufacture method for tantalum capacitor, to produce CA45 type 50V10 μ F as example: with CV value asThe tantalum powder 500mg of 3500 μ F.V/g, pressed density is 6.5g/cm3, be pressed into 5.0 × 3.8 × 4.0 chisVery little anode tantalum piece, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 60% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 1.5;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 15 grams of aerosils, join in manganese nitrate solution;
D), stir after 10 minutes and leave standstill 12 hours in room temperature, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 10 seconds,The height immersing is 70% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 45 DEG C and dries 90 minutes;
C), to be put into temperature be in the saturated steam of 240 DEG C 5 minutes to anode tantalum piece, until anode tantalum piece tableFace obtains the adhesive linkage that thickness is 0.01mm, as Fig. 1, because aerosil particle 1 compares manganese dioxideParticle 2 is little, and it can be attached to the pit on smooth tantalum anode piece surface 3, stops thermal decomposition to obtainManganese dioxide particle 2 is grown up, and draws manganese dioxide particle 2 particle diameters that obtain very little, has increased with smoothThe contact area on tantalum anode piece surface 3;
(3) preparation of strengthening layer suspension:
A), getting 1000ml concentration is 70% manganese nitrate solution;
B), add the manganese dioxide powder of 80g, stir 30 minutes;
C), add aerosil 12g and stir 60 minutes;
D), room temperature leaves standstill stand-by after 24 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension 5 minutes, immerse highly same tantalumAnode block height is consistent;
B), take out anode tantalum piece and deposit after 30 minutes in room temperature, be put into 150 DEG C of oven for drying 30 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 210 DEG C 8 minutes, until at adhesive linkageThe layer 5 that strengthened on 4, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product, as Fig. 2,Owing to increasing the method for one deck adhesive linkage 4 between the tantalum anode piece surface 3 smooth and strengthening layer 5, make bondingLayer 4 diminishes with the contact resistance of anode tantalum piece, and it is large that bond strength becomes, and improves smooth tantalum anode piece table simultaneouslyThe roughness of face 3, eliminates because of smooth tantalum anode piece surface 3 and the bonding not firm factor of strengthening layer 5.
Embodiment 2
A manufacture method for tantalum capacitor, to produce CA45 type 16V47 μ F as example: with CV value asThe tantalum powder 94mg of 32000 μ F.V/g, pressed density is 5.0g/cm3, be pressed into 4.0 × 3.0 × 1.6The anode tantalum piece of size, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 30% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 4;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 7 grams of aerosils, join in manganese nitrate solution;
D), stir after 15 minutes and leave standstill 8 hours in room temperature, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 30 seconds,The height immersing is 90% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 65 DEG C and dries 60 minutes;
C), to be put into temperature be in the saturated steam of 210 DEG C 8 minutes to anode tantalum piece, until anode tantalum piece tableFace obtains the adhesive linkage that thickness is 0.03mm;
(3) preparation of strengthening layer suspension:
A), getting 1000ml concentration is 50% manganese nitrate solution;
B), add the manganese dioxide powder of 240g, stir 60 minutes;
C), add aerosil 0.8g and stir 30 minutes;
D), room temperature leaves standstill stand-by after 12 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension 3 minutes, immerse highly same tantalumAnode block height is consistent;
B), take out anode tantalum piece and deposit after 60 minutes in room temperature, be put into 120 DEG C of oven for drying 60 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 300 DEG C 3 minutes, until at adhesive linkageOn the layer that strengthened, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
Embodiment 3
A manufacture method for tantalum capacitor, to produce CA45 type 6.3V100 μ F as example: with CV value asThe tantalum powder 22mg of 100000 μ F.V/g, pressed density is 5.0g/cm3, be pressed into 4.0 × 3.5 × 2.3The anode tantalum piece of size, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 50% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 2.5;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 10 grams of aerosils, join in manganese nitrate solution;
D), stir after 12 minutes and leave standstill 10 hours in room temperature, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 25 seconds,The height immersing is 85% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 50 DEG C and dries 75 minutes;
C), to be put into temperature be in the saturated steam of 250 DEG C 6 minutes to anode tantalum piece, until anode tantalum piece tableFace obtains the adhesive linkage that thickness is 0.05mm;
(3) preparation of strengthening layer suspension:
A), getting 1000ml concentration is 60% manganese nitrate solution;
B), add the manganese dioxide powder of 150g, stir 42 minutes;
C), add aerosil 5g and stir 40 minutes;
D), room temperature leaves standstill stand-by after 18 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension 4 minutes, immerse highly same tantalumAnode block height is consistent;
B), take out anode tantalum piece and deposit after 50 minutes in room temperature, be put into 140 DEG C of oven for drying 45 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 240 DEG C 6 minutes, until at adhesive linkageOn the layer that strengthened, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
Embodiment 4
A manufacture method for tantalum capacitor, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 40% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 3.5;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 8 grams of aerosils, join in manganese nitrate solution;
D), stir after 13 minutes and leave standstill 9 hours in room temperature, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 20 seconds,The height immersing is 75% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 60 DEG C and dries 65 minutes;
C), to be put into temperature be in the saturated steam of 300 DEG C 3 minutes to anode tantalum piece, until anode tantalum piece tableFace obtains the adhesive linkage that thickness is 0.04mm;
(3) preparation of strengthening layer suspension:
A), getting 1000ml concentration is 55% manganese nitrate solution;
B), add the manganese dioxide powder of 120g, stir 35 minutes;
C), add aerosil 2g and stir 35 minutes;
D), room temperature leaves standstill stand-by after 20 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension 3.5 minutes, immerse highly withTantalum anode tile height is consistent;
B), take out anode tantalum piece and deposit after 40 minutes in room temperature, be put into 130 DEG C of oven for drying 50 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 280 DEG C 4 minutes, until at adhesive linkageOn the layer that strengthened, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
Embodiment 5
A manufacture method for tantalum capacitor, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 45% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 3;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 12 grams of aerosils, join in manganese nitrate solution;
D), stir after 11 minutes and leave standstill 11 hours in room temperature, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 15 seconds,The height immersing is 85% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 55 DEG C and dries 70 minutes;
C), to be put into temperature be in the saturated steam of 260 DEG C 7 minutes to anode tantalum piece, until anode tantalum piece tableFace obtains the adhesive linkage that thickness is 0.02mm;
(3) preparation of strengthening layer suspension:
A), getting 1000ml concentration is 65% manganese nitrate solution;
B), add the manganese dioxide powder of 200g, stir 50 minutes;
C), add aerosil 8g and stir 50 minutes;
D), room temperature leaves standstill stand-by after 22 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension 4.5 minutes, immerse highly withTantalum anode tile height is consistent;
B), take out anode tantalum piece and deposit after 45 minutes in room temperature, be put into 125 DEG C of oven for drying 55 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 250 DEG C 6 minutes, until at adhesive linkageOn the layer that strengthened, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
Make 100 of anode tantalum pieces according to embodiment 1,2,3, extract in embodiment 1,2,3 each 5Sample carries out loss measurement, the high low temperature variation characteristic of loss of 1-5 numbered samples (room temperature ,-55 DEG C andThe loss of+125 DEG C changes) as table 1
The high low temperature variation characteristic of table one embodiment 1,2,3 sample loss
Then 100 of the anode tantalum pieces requiring according to embodiment 1,2,3 making same sizes, according to existingExplained hereafter tantalum capacitor as comparative example 1,2,3, extracts in comparative example 1,2,3 each 5 to finished productSample carries out loss measurement, the high low temperature variation characteristic of loss of 1-5 numbered samples (room temperature ,-55 DEG C andThe loss of+125 DEG C changes) as table 2,
The high low temperature variation characteristic of table 2 embodiment 1,2,3 sample loss
According to table 1, table 2, by embodiment 1,2,3 and comparative example 1,2,3 carry out high low temperature (55 DEG C,+ 125 DEG C) contrast of loss value rate of change, as table 3.
The high low temperature loss value rate of change of table 3 embodiment 1,2,3 and comparative example 1,2,3
As shown in table 3, adopt this technology produce product under identical testing conditions, due to strengthening layer withThe adhesive strength of tantalum anode piece increases contact resistance and reduces, product under high and low temperature state, the variation of loss valueReduce, improved the temperature characterisitic of product, make the performance of product more stable.
Claims (1)
1. a manufacture method for tantalum capacitor, is characterized in that: it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 30～60% manganese nitrate solution, add nitric acid to adjust the PH of solution and be 1.5～4；
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 7～15 grams of aerosils, join in manganese nitrate solution;
D), stir after 10～15 minutes and leave standstill 8～12 hours in room temperature, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 10～30Second, the height of immersion is 70～90% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 45～65 DEG C and dries 60～90 minutes;
C), to be put into temperature be in the saturated steam of 210～300 DEG C 3～8 minutes to anode tantalum piece, until anodeTantalum piece surface obtains the adhesive linkage that thickness is 0.01～0.05mm;
(3) preparation of strengthening layer suspension:
A), getting 1000ml concentration is 50～70% manganese nitrate solution;
B), add the manganese dioxide powder of 80～240g, stir 30～60 minutes;
C), add aerosil 0.8～12g and stir 30～60 minutes;
D), room temperature leaves standstill stand-by after 12～24 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension 3～5 minutes, immerse highly withTantalum anode tile height is consistent;
B), take out anode tantalum piece and deposit after 30～60 minutes in room temperature, be put into 120～150 DEG C of oven for drying30～60 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 210～300 DEG C 3～8 minutes, until bondingLayer is strengthened on layer;
(5) coating that completes carbon-coating and silver layer according to existing technique is until finished product.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210320137.6A CN103680961B (en) | 2012-08-31 | 2012-08-31 | A kind of manufacture method of tantalum capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210320137.6A CN103680961B (en) | 2012-08-31 | 2012-08-31 | A kind of manufacture method of tantalum capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103680961A CN103680961A (en) | 2014-03-26 |
| CN103680961B true CN103680961B (en) | 2016-05-11 |
Family
ID=50318225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210320137.6A Active CN103680961B (en) | 2012-08-31 | 2012-08-31 | A kind of manufacture method of tantalum capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103680961B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609313B (en) * | 2016-01-13 | 2018-05-11 | 深圳顺络电子股份有限公司 | A kind of manufacture method of chip conducting polymer tantalum capacitor cathode guide layer |
| CN112992548A (en) * | 2021-02-24 | 2021-06-18 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Method for improving stress resistance of chip solid electrolyte capacitor |
| CN114974898B (en) * | 2022-06-14 | 2024-06-14 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Capacitor core and method for manufacturing the same, electrolytic capacitor and method for manufacturing the same |
| CN116110722A (en) * | 2023-03-10 | 2023-05-12 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Solid electrolytic capacitor and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003019593A1 (en) * | 2001-08-22 | 2003-03-06 | Showa Denko K.K. | Solid electrolytic capacitor and method for producing the same |
| DE102005028262B4 (en) * | 2005-06-17 | 2010-05-06 | Kemet Electronics Corp. | Capacitor with an electrode and method of manufacturing the capacitor with the electrode |
| CN101329951B (en) * | 2008-05-23 | 2011-05-04 | 电子科技大学 | High-frequency nonpolarity solid tantalum electrolytic capacitor with lead wire and manufacturing method thereof |
-
2012
- 2012-08-31 CN CN201210320137.6A patent/CN103680961B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103680961A (en) | 2014-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103680961B (en) | A kind of manufacture method of tantalum capacitor | |
| US9987780B2 (en) | Plastic-metal composite material and manufacturing method thereof | |
| CN112542305A (en) | Integrated sectional forming micro-inductor manufacturing process | |
| CN102503546B (en) | Antioxidant impregnating agent of graphite die used for hot-pressing sintering of diamond tool and preparation method and processing method thereof | |
| CN105921753A (en) | Method for preparing near-net-shape parts with complex shapes from diamond-copper composite material | |
| CN101891209B (en) | Method for preparing nano powder of spherical silicon dioxide | |
| CN105729328A (en) | Preparation method of superhard diamond grinding wheel | |
| CN107020373A (en) | One kind SiO2Coat method and metal soft magnetic powder core prepared by this method that technology of metal powder prepares metal soft magnetic powder core | |
| CN107634045A (en) | A kind of compound bonding wire of golden contracted payment and preparation method thereof | |
| CN104711663A (en) | Manufacturing method of medium and high voltage electrode foil employing seven-grade different pore-forming conditions | |
| CN103601495A (en) | NP0 low-temperature sintered ceramic capacitor dielectric material and preparation method thereof | |
| CN102314981B (en) | Ferrum-nickel-molybdenum alloy soft magnetic material with magnetic permeability mu being 125 and manufacturing method thereof | |
| CN105741908B (en) | A kind of non-metal insulating material electroplating surface conductive nano carbon slurry and preparation method thereof | |
| CN104313516B (en) | Arrangements for automotive doors adds carbon fiber aluminum-based compound material and preparation method thereof with rare earth | |
| CN107278031A (en) | The high frequency FPC of 6.5≤Dk≤10 is made using turning ion implanting plating mode | |
| CN102408248B (en) | Manufacturing method of sustained-release drag-reducing surface | |
| CN111524697A (en) | Preparation method of 35 carbonyl iron powder core with magnetic conductivity | |
| CN112562957A (en) | Insulating coated FeSiAl composite magnetic powder core and preparation method thereof | |
| CN105895301B (en) | A kind of ferrocart core inductance and preparation method thereof | |
| CN103759567B (en) | A kind of vaporizer copper pipe and manufacture method thereof | |
| CN106011733A (en) | Metal ceramic surface treatment method | |
| CN102314983A (en) | Ferrum-silicon alloy soft magnetic material with magnetic permeability mu being 90 and manufacturing method thereof | |
| CN102820135A (en) | Method for reducing change rate of high-temperature capacitance of niobium capacitor | |
| CN204208961U (en) | For processing the spinning wheel of air duct flange | |
| CN203269747U (en) | Roller kiln for producing foam glass |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |