CN103680961A - Method for manufacturing tantalum capacitor - Google Patents
Method for manufacturing tantalum capacitor Download PDFInfo
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- CN103680961A CN103680961A CN201210320137.6A CN201210320137A CN103680961A CN 103680961 A CN103680961 A CN 103680961A CN 201210320137 A CN201210320137 A CN 201210320137A CN 103680961 A CN103680961 A CN 103680961A
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Abstract
The invention discloses a method for manufacturing a tantalum capacitor. The method comprises the following steps: (1) preparing an adhesive; (2) manufacturing a bonding layer; (3) preparing strengthening layer suspension; (4) manufacturing a strengthening layer, and coating a carbon layer and a silver layer according to the conventional process until obtaining a finished product. The method has the benefits that the bonding layer is added between the strengthening layer and a tantalum anode block, so that the contact resistance of the strengthening layer and the surface of the tantalum anode block is greatly reduced; the factor that the tantalum anode block cannot be firmly bonded with the strengthening layer due to the smooth surface is eliminated, and the rate of change of the loss value of the tantalum electrolytic capacitor in a high and low temperature environment is reduced by more than 50 percent; the contact resistance is greatly reduced through the bonding layer, therefore, the stability of the loss value of a product is improved; the method also has the characteristics that the technological operation is simple, the control is easy, and the method is suitable for industrialized mass production; the control difficulty during the production process and the production cost are reduced.
Description
Technical field
The present invention relates to a kind of manufacture method of tantalum capacitor, belong to capacitor manufacturing technology field.
Background technology
The raw embryo of tantalum capacitor is in molding mold process, the friction of its tantalum anode piece and mould inner wall makes tantalum anode piece top layer micropore be destroyed and become smooth, after add strengthening layer and the bond strength extreme difference of tantalum anode piece in man-hour, cause the loss of product in high low-temperature measurement process, to change greatly.Numerous tantalum capacitor manufacturers has carried out a lot of research to how improving strengthening layer with the process of tantalum anode piece surface conjunction power for this reason, as taked, not doing strengthening layer directly makes the raw embryo of tantalum piece and the mould inner wall of depanning not produce the technologies such as friction by decomposition high concentration manganese nitrate, change forming die structure, if directly soak strengthening layer, because of the lower cementability of aerosil content in strengthening layer poor, only play the effect that disperses manganese dioxide powder, make the contact resistance of strengthening layer and tantalum anode interblock larger.Under high temperature and low-temperature condition, this contact resistance variation rate greatly directly causes product loss value poor stability.The enforcement of these technology, has improved tantalum piece to a certain extent with the bond strength between strengthening layer, but has increased control difficulty and the production cost of production process simultaneously.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of tantalum capacitor, can eliminate because of the bonding not firm factor of tantalum anode piece smooth surface and strengthening layer, reduce loss variation with temperature rate, improve the stability of product loss value, reduce control difficulty and the production cost of production process.
The object of the invention is to be achieved through the following technical solutions: a kind of manufacture method of tantalum capacitor, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 30～60% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 1.5～4;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 7～15 grams of aerosils, join in manganese nitrate solution;
D), stir after 10～15 minutes in room temperature standing 8～12 hours, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 10～30 seconds, the height of immersion is 70～90% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 45～65 ℃ and dries 60～90 minutes;
C), to be put into temperature be in the saturated steam of 210～300 ℃ 3～8 minutes to anode tantalum piece, until anode tantalum piece surface obtains the adhesive linkage that thickness is 0.01～0.05mm;
(3) preparation of strengthening layer suspension-turbid liquid:
A), getting 1000ml concentration is 50～70% manganese nitrate solution;
B), add the manganese dioxide powder of 80～240g, stir 30～60 minutes;
C), add aerosil 0.8～12g and stir 30～60 minutes;
D), room temperature is stand-by after standing 12～24 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension-turbid liquid 3～5 minutes, immerse highly consistent with tantalum anode tile height;
B), take out anode tantalum piece and deposit after 30～60 minutes in room temperature, be put into 120～150 ℃ of oven for drying 30～60 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 210～300 ℃ 3～8 minutes, until the layer that strengthened on adhesive linkage, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
Beneficial effect of the present invention is: at strengthening layer and tantalum anode interblock, increase one deck adhesive linkage, the contact resistance on strengthening layer and tantalum anode piece surface is reduced greatly, in adhesive linkage content a larger increase of silicon dioxide a part of loss value, it is little that the loss value of this increase part is stablized temperature variant rate of change, eliminated because of the bonding not firm factor of tantalum anode piece smooth surface and strengthening layer, make loss value rate of change under high and low temperature environment of tantalum electrolytic capacitor reduce more than 50%, thereby reducing contact resistance greatly, adhesive linkage improved the stability of product loss value, and it is simple to have technological operation, easy to control, the feature that is applicable to industrialized production, control difficulty and the production cost of production process have been reduced.
Accompanying drawing explanation
Fig. 1 is adhesive linkage of the present invention and tantalum anode piece surface binded schematic diagram;
Fig. 2 is the structure chart that the present invention increases the anode tantalum piece after adhesive linkage.
Wherein, 1-aerosil particle, 2-manganese dioxide particle, the tantalum anode piece surface that 3-is smooth, 4-adhesive linkage, 5-strengthening layer.
Embodiment
Below in conjunction with drawings and Examples, further describe technical scheme of the present invention, but described in claimed scope is not limited to.
Embodiment 1
A manufacture method for tantalum capacitor, take that to produce CA45 type 50V10 μ F be example: the tantalum powder 500mg that is 3500 μ F.V/g by CV value, pressed density is 6.5g/cm
3, being pressed into the anode tantalum piece of 5.0 * 3.8 * 4.0 sizes, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 60% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 1.5;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 15 grams of aerosils, join in manganese nitrate solution;
D), stir after 10 minutes in room temperature standing 12 hours, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 10 seconds, the height of immersion is 70% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 45 ℃ and dries 90 minutes;
C), to be put into temperature be in the saturated steam of 240 ℃ 5 minutes to anode tantalum piece, until anode tantalum piece surface obtains the adhesive linkage that thickness is 0.01mm, as Fig. 1, because aerosil particle 1 is less than manganese dioxide particle 2, it can be attached to the pit on smooth tantalum anode piece surface 3, stop the manganese dioxide particle 2 that thermal decomposition obtains to be grown up, draw manganese dioxide particle 2 particle diameters that obtain very little, increased the contact area with smooth tantalum anode piece surface 3;
(3) preparation of strengthening layer suspension-turbid liquid:
A), getting 1000ml concentration is 70% manganese nitrate solution;
B), add the manganese dioxide powder of 80g, stir 30 minutes;
C), add aerosil 12g and stir 60 minutes;
D), room temperature is stand-by after standing 24 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension-turbid liquid 5 minutes, immerse highly consistent with tantalum anode tile height;
B), take out anode tantalum piece and deposit after 30 minutes in room temperature, be put into 150 ℃ of oven for drying 30 minutes;
C), anode tantalum piece being put into temperature is in the saturated steam of 210 ℃ 8 minutes, the layer 5 until strengthened on adhesive linkage 4, the coating that completes carbon-coating and silver layer according to existing technique is again until finished product, as Fig. 2, due to the tantalum anode piece surface 3 smooth and 5 methods that increase one deck adhesive linkage 4 of strengthening layer, adhesive linkage 4 and the contact resistance of anode tantalum piece are diminished, it is large that bond strength becomes, improve the roughness on smooth tantalum anode piece surface 3 simultaneously, eliminate because of smooth tantalum anode piece surface 3 and the bonding not firm factor of strengthening layer 5.
Embodiment 2
A manufacture method for tantalum capacitor, take that to produce CA45 type 16V47 μ F be example: the tantalum powder 94mg that is 32000 μ F.V/g by CV value, pressed density is 5.0g/cm
3, being pressed into the anode tantalum piece of 4.0 * 3.0 * 1.6 sizes, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 30% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 4;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 7 grams of aerosils, join in manganese nitrate solution;
D), stir after 15 minutes in room temperature standing 8 hours, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 30 seconds, the height of immersion is 90% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 65 ℃ and dries 60 minutes;
C), to be put into temperature be in the saturated steam of 210 ℃ 8 minutes to anode tantalum piece, until anode tantalum piece surface obtains the adhesive linkage that thickness is 0.03mm;
(3) preparation of strengthening layer suspension-turbid liquid:
A), getting 1000ml concentration is 50% manganese nitrate solution;
B), add the manganese dioxide powder of 240g, stir 60 minutes;
C), add aerosil 0.8g and stir 30 minutes;
D), room temperature is stand-by after standing 12 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension-turbid liquid 3 minutes, immerse highly consistent with tantalum anode tile height;
B), take out anode tantalum piece and deposit after 60 minutes in room temperature, be put into 120 ℃ of oven for drying 60 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 300 ℃ 3 minutes, until the layer that strengthened on adhesive linkage, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
A manufacture method for tantalum capacitor, take that to produce CA45 type 6.3V100 μ F be example: the tantalum powder 22mg that is 100000 μ F.V/g by CV value, pressed density is 5.0g/cm
3, being pressed into the anode tantalum piece of 4.0 * 3.5 * 2.3 sizes, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 50% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 2.5;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 10 grams of aerosils, join in manganese nitrate solution;
D), stir after 12 minutes in room temperature standing 10 hours, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 25 seconds, the height of immersion is 85% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 50 ℃ and dries 75 minutes;
C), to be put into temperature be in the saturated steam of 250 ℃ 6 minutes to anode tantalum piece, until anode tantalum piece surface obtains the adhesive linkage that thickness is 0.05mm;
(3) preparation of strengthening layer suspension-turbid liquid:
A), getting 1000ml concentration is 60% manganese nitrate solution;
B), add the manganese dioxide powder of 150g, stir 42 minutes;
C), add aerosil 5g and stir 40 minutes;
D), room temperature is stand-by after standing 18 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension-turbid liquid 4 minutes, immerse highly consistent with tantalum anode tile height;
B), take out anode tantalum piece and deposit after 50 minutes in room temperature, be put into 140 ℃ of oven for drying 45 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 240 ℃ 6 minutes, until the layer that strengthened on adhesive linkage, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
A manufacture method for tantalum capacitor, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 40% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 3.5;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 8 grams of aerosils, join in manganese nitrate solution;
D), stir after 13 minutes in room temperature standing 9 hours, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 20 seconds, the height of immersion is 75% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 60 ℃ and dries 65 minutes;
C), to be put into temperature be in the saturated steam of 300 ℃ 3 minutes to anode tantalum piece, until anode tantalum piece surface obtains the adhesive linkage that thickness is 0.04mm;
(3) preparation of strengthening layer suspension-turbid liquid:
A), getting 1000ml concentration is 55% manganese nitrate solution;
B), add the manganese dioxide powder of 120g, stir 35 minutes;
C), add aerosil 2g and stir 35 minutes;
D), room temperature is stand-by after standing 20 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension-turbid liquid 3.5 minutes, immerse highly consistent with tantalum anode tile height;
B), take out anode tantalum piece and deposit after 40 minutes in room temperature, be put into 130 ℃ of oven for drying 50 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 280 ℃ 4 minutes, until the layer that strengthened on adhesive linkage, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
A manufacture method for tantalum capacitor, it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 45% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 3;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 12 grams of aerosils, join in manganese nitrate solution;
D), stir after 11 minutes in room temperature standing 11 hours, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 15 seconds, the height of immersion is 85% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 55 ℃ and dries 70 minutes;
C), to be put into temperature be in the saturated steam of 260 ℃ 7 minutes to anode tantalum piece, until anode tantalum piece surface obtains the adhesive linkage that thickness is 0.02mm;
(3) preparation of strengthening layer suspension-turbid liquid:
A), getting 1000ml concentration is 65% manganese nitrate solution;
B), add the manganese dioxide powder of 200g, stir 50 minutes;
C), add aerosil 8g and stir 50 minutes;
D), room temperature is stand-by after standing 22 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension-turbid liquid 4.5 minutes, immerse highly consistent with tantalum anode tile height;
B), take out anode tantalum piece and deposit after 45 minutes in room temperature, be put into 125 ℃ of oven for drying 55 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 250 ℃ 6 minutes, until the layer that strengthened on adhesive linkage, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
According to embodiment 1,2,3, make 100 of anode tantalum pieces, extract each 5 samples in embodiment 1,2,3 and carry out loss measurement, the high low temperature variation characteristic of loss of 1-5 numbered samples (room temperature ,-55 ℃ and+loss of 125 ℃ change) is as table 1
The high low temperature variation characteristic of table one embodiment 1,2,3 sample loss
Then 100 of the anode tantalum pieces requiring according to embodiment 1,2,3 making same sizes, according to existing explained hereafter tantalum capacitor to finished product as comparative example 1,2,3, extract each 5 samples in comparative example 1,2,3 and carry out loss measurement, the high low temperature variation characteristic of loss of 1-5 numbered samples (room temperature ,-55 ℃ and+loss of 125 ℃ change) is as table 2
The high low temperature variation characteristic of table 2 embodiment 1,2,3 sample loss
According to table 1, table 2, embodiment 1,2,3 and comparative example 1,2,3 are carried out to high low temperature (55 ℃ ,+125 ℃) loss value rate of change contrast, as table 3.
The high low temperature loss value rate of change of table 3 embodiment 1,2,3 and comparative example 1,2,3
As shown in table 3, adopt product that this technology produces under identical testing conditions, because the adhesive strength increase contact resistance of strengthening layer and tantalum anode piece reduces, product is under high and low temperature state, the variation of loss value reduces, and has improved the temperature characterisitic of product, makes the performance of product more stable.
Claims (1)
1. a manufacture method for tantalum capacitor, is characterized in that: it comprises following steps:
(1) preparation of bonding agent:
A), to get 100ml concentration be 30～60% manganese nitrate solution, adding nitric acid, to adjust the PH of solution be 1.5～4;
B), by above-mentioned manganese nitrate solution cool to room temperature;
C), claim 7～15 grams of aerosils, join in manganese nitrate solution;
D), stir after 10～15 minutes in room temperature standing 8～12 hours, eliminate the bubble in solution, stand-by;
(2) make adhesive linkage:
A), the anode tantalum piece that completes manganese dioxide dielectric substrate tunicle is immersed to above-mentioned adhesive solution 10～30 seconds, the height of immersion is 70～90% of tantalum tile height;
B), taking out anode tantalum piece puts into the baking oven of 45～65 ℃ and dries 60～90 minutes;
C), to be put into temperature be in the saturated steam of 210～300 ℃ 3～8 minutes to anode tantalum piece, until anode tantalum piece surface obtains the adhesive linkage that thickness is 0.01～0.05mm;
(3) preparation of strengthening layer suspension-turbid liquid:
A), getting 1000ml concentration is 50～70% manganese nitrate solution;
B), add the manganese dioxide powder of 80～240g, stir 30～60 minutes;
C), add aerosil 0.8～12g and stir 30～60 minutes;
D), room temperature is stand-by after standing 12～24 hours;
(4) make strengthening layer:
A), the tantalum anode piece of making adhesive linkage is immersed to strengthening layer suspension-turbid liquid 3～5 minutes, immerse highly consistent with tantalum anode tile height;
B), take out anode tantalum piece and deposit after 30～60 minutes in room temperature, be put into 120～150 ℃ of oven for drying 30～60 minutes;
C), anode tantalum piece is put into temperature is in the saturated steam of 210～300 ℃ 3～8 minutes, until the layer that strengthened on adhesive linkage, then the coating that completes carbon-coating and silver layer according to existing technique is until finished product.
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| CN201210320137.6A CN103680961B (en) | 2012-08-31 | 2012-08-31 | A kind of manufacture method of tantalum capacitor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609313A (en) * | 2016-01-13 | 2016-05-25 | 深圳顺络电子股份有限公司 | Manufacturing method for cathode guide layer of chip-type conductive polymer tantalum capacitor |
| CN112992548A (en) * | 2021-02-24 | 2021-06-18 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Method for improving stress resistance of chip solid electrolyte capacitor |
| CN114974898A (en) * | 2022-06-14 | 2022-08-30 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Capacitor core and manufacturing method thereof, electrolytic capacitor and manufacturing method thereof |
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| US20040023442A1 (en) * | 2001-08-22 | 2004-02-05 | Hiroshi Konuma | Solid electrolytic capacitor and method for producing the same |
| US20060286760A1 (en) * | 2005-06-17 | 2006-12-21 | Epcos Ag | Electrode for an electrical component, component with the electrode, and manufacturing method for the electrode and the component |
| CN101329951A (en) * | 2008-05-23 | 2008-12-24 | 电子科技大学 | High-frequency nonpolarity solid tantalum electrolytic capacitor with lead wire and manufacturing method thereof |
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2012
- 2012-08-31 CN CN201210320137.6A patent/CN103680961B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040023442A1 (en) * | 2001-08-22 | 2004-02-05 | Hiroshi Konuma | Solid electrolytic capacitor and method for producing the same |
| US20060286760A1 (en) * | 2005-06-17 | 2006-12-21 | Epcos Ag | Electrode for an electrical component, component with the electrode, and manufacturing method for the electrode and the component |
| CN101329951A (en) * | 2008-05-23 | 2008-12-24 | 电子科技大学 | High-frequency nonpolarity solid tantalum electrolytic capacitor with lead wire and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105609313A (en) * | 2016-01-13 | 2016-05-25 | 深圳顺络电子股份有限公司 | Manufacturing method for cathode guide layer of chip-type conductive polymer tantalum capacitor |
| CN105609313B (en) * | 2016-01-13 | 2018-05-11 | 深圳顺络电子股份有限公司 | A kind of manufacture method of chip conducting polymer tantalum capacitor cathode guide layer |
| CN112992548A (en) * | 2021-02-24 | 2021-06-18 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Method for improving stress resistance of chip solid electrolyte capacitor |
| CN114974898A (en) * | 2022-06-14 | 2022-08-30 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Capacitor core and manufacturing method thereof, electrolytic capacitor and manufacturing method thereof |
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