CN203165672U - Structure used for raising tantalum anode block internal electric field uniformity - Google Patents
Structure used for raising tantalum anode block internal electric field uniformity Download PDFInfo
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- CN203165672U CN203165672U CN 201320020628 CN201320020628U CN203165672U CN 203165672 U CN203165672 U CN 203165672U CN 201320020628 CN201320020628 CN 201320020628 CN 201320020628 U CN201320020628 U CN 201320020628U CN 203165672 U CN203165672 U CN 203165672U
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- tantalum
- tantalum anode
- anode block
- anode
- electric field
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Abstract
The utility model discloses a structure used for raising tantalum anode block internal electric field uniformity, comprising a tantalum anode block and a metal wire. The metal wire is inserted into the tantalum anode block; the metal wire in the tantalum anode block is distributed in a shape of a clip or a grid. The beneficial effects are that a present straight metal wire located in the tantalum anode block is replaced by a metal wire in a clip shape or a grid shape, which raises porous anode internal electric field uniformity in anodization treatment and reduces tantalum anode block DC leakage current.
Description
Technical field
The utility model relates to the inhomogeneity structure of a kind of raising tantalum anode piece internal electric field, belongs to the electrolytic capacitor preparing technical field.
Background technology
The tantalum electrolytic capacitor of being made by the tantalum powder has become the main contributor to the electronic circuit miniaturization, and makes that sort circuit can steady operation at extreme environment.Typical technology is the cohesive body that has micro channel by compression tantalum powder with formation, this cohesive body of sintering is to form the porous tantalum anode bodies in high-temperature vacuum furnace, make this porous tantalum anode bodies in suitable electrolyte, carry out anodization then, form continuous tantalum pentoxide dielectric film at this porous tantalum anode bodies, be packaged into capacitor with electrolyte again.
Because the development of tantalum powder powder-making technique, specific volume is more and more higher, the tantalum powder particles is more and more littler, the cohesive body of making is when high-temperature calcination, cohesive body is inner can to subside, micro channel is blocked, during anodization, electrolyte can not infiltrate through porous anode body inside fully in electrolyte, and because the porous anode body lead-out wire is the linear wire, the non-uniform electric that causes porous anode body inside, heat concentrates the oxide-film at position thicker, even makes the tantalum pentoxide deielectric-coating to crystalline transformation, and the oxide-film at other positions is just thinner, therefore the tantalum pentoxide dielectric film thickness that generates presents inconsistent gradient distribution, and is even not continuous.Although evenly whether tantalum pentoxide deielectric-coating thickness, crystalization is not easy to quantize, can characterize with the DC leakage current parameter of capacitor, that is exactly that the DC leakage current of anode bodies is bigger.
Static capacity is at the vast capacity hybrid energy-storing tantalum capacitor of microfarads up to ten thousand, and volume is very little, causing volume, the quality of porous anode body, the specific volume of use tantalum powder is more than five times of traditional tantalum capacitor anode bodies, the anode bodies edge is also farther to the distance of tantalum wire, thereby when the electrochemistry anodization, the heat that produces is more, more concentrated, and the DC leakage current of anode bodies is considerably beyond the control level.
Summary of the invention
The purpose of this utility model is to provide a kind of raising tantalum anode piece internal electric field inhomogeneity structure, can reduce the DC leakage current of tantalum anode piece.
The purpose of this utility model is achieved through the following technical solutions: the inhomogeneity structure of a kind of raising tantalum anode piece internal electric field, comprise tantalum anode piece and wire, wire inserts the inside of tantalum anode piece, the wire of described tantalum anode piece inside is that the version of " clip " shape or mesh shape distributes, the tantalum anode piece is near the tantalum wire zone with away from tantalum wire zone electric field strength difference in the time of can reducing to form oxide film dielectric like this, electric current is transmitted to the path of each tantalum powder particles when reducing the formation of tantalum piece simultaneously via tantalum wire, the uniformity of porous anode body internal electric field when having improved anodization, the oxide film dielectric steady quality that tantalum piece surface is formed, good uniformity reduces the leakage current of tantalum anode piece.
Described wire is tantalum wire, niobium silk or tantalum-niobium alloy silk.
The beneficial effects of the utility model are: will have now and place the straight wire of tantalum anode piece inside to replace to " clip " shape or latticed, the uniformity of porous anode body internal electric field when having improved anodization has reduced the DC leakage current of tantalum anode piece.
Description of drawings
Fig. 1 is the inner tantalum wire structural representation of prior art tantalum anode piece;
Fig. 2 is the inner tantalum wire structural representation of the utility model tantalum anode piece.
Wherein, 1-tantalum anode piece, 2-wire.
Embodiment
Further describe the technical solution of the utility model below in conjunction with drawings and Examples, but that claimed scope is not limited to is described.
As Fig. 1, the inner tantalum wire structural representation of prior art tantalum anode piece, wire 2 is placed for linear in tantalum anode piece 1, the non-uniform electric that causes porous anode body inside, heat concentrates the oxide-film at position thicker, even make the tantalum pentoxide deielectric-coating to crystalline transformation, and the oxide-film at other positions is just thinner, and the DC leakage current of tantalum anode piece is bigger.
The input specification is that the vast capacity energy storage mixing tantalum capacitor of 25V18000 μ F is produced, the tantalum powder that the tantalum anode piece uses is 70000 μ FV/g, anode quality is 14g, as Fig. 2, wherein half tantalum anode piece adopts " clip " shape wire 2 to imbed tantalum anode piece 1 inside as tantalum anode piece extension, wire 2 is tantalum wire, and second half anode block uses the production of linear tantalum wire.After anode bodies was finished electrochemistry formation tantalum pentoxide deielectric-coating, each extracted 5 anode blocks and measures its DC leakage current, and test value sees Table 1.
Table 1 tantalum anode piece DC leakage current performance comparison one
The input specification is that the vast capacity energy storage mixing tantalum capacitor of 50V8000 μ F is produced, the tantalum powder that the tantalum anode piece uses is 70000 μ FV/g, anode quality is 14g, wherein half tantalum anode piece adopts grid-shaped wire 2 to imbed tantalum anode piece 1 inside as tantalum anode piece extension, wire 2 is the tantalum-niobium alloy silk, and second half anode block uses linear tantalum-niobium alloy silk to produce.After anode bodies was finished electrochemistry formation tantalum pentoxide deielectric-coating, each extracted 5 anode blocks and measures its DC leakage current, and test value sees Table 2.
Table 2 tantalum anode piece DC leakage current performance comparison two
As seen, by table 1 and table 2 as can be seen, adopt the wire of " clip " shape or grid-shaped to imbed porous anode body inside as porous anode tantalum body extension, obviously reduced tantalum anode piece DC leakage current.
Claims (1)
1. one kind is improved the inhomogeneity structure of tantalum anode piece internal electric field, comprise tantalum anode piece (1) and wire (2), wire (2) inserts the inside of tantalum anode piece (1), it is characterized in that: the inner wire (2) of described tantalum anode piece (1) is that the version of " clip " shape or mesh shape distributes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320020628 CN203165672U (en) | 2013-01-15 | 2013-01-15 | Structure used for raising tantalum anode block internal electric field uniformity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320020628 CN203165672U (en) | 2013-01-15 | 2013-01-15 | Structure used for raising tantalum anode block internal electric field uniformity |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203165672U true CN203165672U (en) | 2013-08-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320020628 Expired - Lifetime CN203165672U (en) | 2013-01-15 | 2013-01-15 | Structure used for raising tantalum anode block internal electric field uniformity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203165672U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489648A (en) * | 2013-10-16 | 2014-01-01 | 中国振华（集团）新云电子元器件有限责任公司 | Method for improving thickness uniformity of dielectric oxide film on electrolytic capacitor anode block |
-
2013
- 2013-01-15 CN CN 201320020628 patent/CN203165672U/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489648A (en) * | 2013-10-16 | 2014-01-01 | 中国振华（集团）新云电子元器件有限责任公司 | Method for improving thickness uniformity of dielectric oxide film on electrolytic capacitor anode block |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130828 |