CN103646915A - A method for removing a C element in a SiCN thin film and a cyclic regeneration processing technique of a monitoring sheet containing the SiCN thin film - Google Patents

A method for removing a C element in a SiCN thin film and a cyclic regeneration processing technique of a monitoring sheet containing the SiCN thin film Download PDF

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Publication number
CN103646915A
CN103646915A CN201310625633.7A CN201310625633A CN103646915A CN 103646915 A CN103646915 A CN 103646915A CN 201310625633 A CN201310625633 A CN 201310625633A CN 103646915 A CN103646915 A CN 103646915A
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China
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sicn
thin film
plasma
sicn thin
film
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顾梅梅
朱玉传
张旭升
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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Priority to CN201310625633.7A priority Critical patent/CN103646915A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention relates to the technical field of semiconductor manufacture and especially to a method for removing a C element in a SiCN thin film and a cyclic regeneration processing technique of a monitoring sheet containing the SiCN thin film. The C element removing method comprises: performing ashing processing on the C element in the SiCN thin film with O3 plasma such that oxygen radical and the C element in the SiCN thin film are reacted to form CO or CO2 to be removed. In the C element removing method, a conventional O2 ashing technique is replaced by an O3 ashing technique. The O3 may form the oxygen radical under low energy, so the O3 plasma has a stronger oxidation capability and further has a stronger C element removing capability compared with the O2 plasma. Therefore, a purpose of optimizing SiCN cyclic reuse is achieved; the number of silicon chip reuse is increased; and production cost is decreased.

Description

The removal method of C element and monitoring piece regeneration technology in SiCN film
Technical field
The present invention relates to technical field of manufacturing semiconductors, the removal method of C element in especially a kind of SiCN film, and the circular regeneration treatment process of the monitoring piece that contains SiCN film.
Background technology
In Cu metal interconnection technique, NDC(SiCN) thin-film material conventionally with Low-k(low-k) material matches, for copper-connection dielectric layer material.Because all contain the C element of certain ingredients in NDC and Low-k material, thus the dielectric constant of material be minimized, thereby improve the signal response speed of device.But because this film of NDC is actual, be " nitrogen-doped silicon carbide (SiCN) ", Low-k material is actual is SiOC, in their thin film composition, all contain C element, current wet-etching technology is difficult to the NPW(Non Productive Wafer monitoring piece to daily monitoring) carry out circular regeneration (recycle).
The recycle way of Low-k material (SiOC), normally before wet etching, first carries out O to SiOC film 2ashing (Ash) is processed, and removes the C element in film, then uses corresponding acid (HF) to carry out recycle.But there is O 2the problems such as plasma ashing technique exists removal efficiency not high, the ashing processing time long (being generally 80s/ sheet).
And the actual cycle result of use of NDC film (SiCN) is poorer, in recycle, often exist NDC film to remove in batches unclean, cause NDC NPW to recycle.This is because common O 2ashing oxidability is not enough to remove the C element in SiCN film, causes follow-up acid (HF) to be processed and cannot remove NDC film completely.So in the actual volume production of semiconductor factory, NDC NPW normally directly does (reclaim) processing of regenerating outside committee.The outer regeneration of committee (reclaim) is that silicon chip packed and transported is arrived to semiconductor factory specialized company in addition, utilizes special chemical grinding equipment, not only grinds the film of removing on Si substrate, but also removes a part of silicon substrate.Regeneration (reclaim) not only cost is expensive, and compares with normal silicon chip, and the silicon chip after regeneration is thinner, and the regeneration times that this has limited NPW more causes the use cost of NDC monitoring piece expensive.
Summary of the invention
Technical problem to be solved by this invention is for optimizing the removal method of C element in SiCN film, and the circular regeneration treatment process of the monitoring piece that contains SiCN film.
The technical solution adopted in the present invention is:
A removal method for C element in SiCN film, is used O 3plasma carries out ashing processing to the C element in SiCN film, and the C element reaction in oxygen radical and SiCN film forms CO or CO 2be pulled out.
And a kind of monitoring piece regeneration technology containing SiCN film, comprises the steps: S1, and SiCN monitoring piece is carried out to O 3plasma ashing is processed, and the C element reaction in oxygen radical and SiCN film forms CO or CO 2be pulled out; S2, carries out hydrofluoric acid wet etching to monitoring piece; S3, carries out granule detecting and film thickness measuring, to confirm circular regeneration effect; S4, silicon chip drops into Recycling.
Use O 3cineration technics replaces traditional O 2cineration technics, O 3can be at more low-yield lower formation oxygen radical, so O 3plasma and O 2plasma is compared, and oxidability is stronger, thereby the removal ability of C element is also stronger, and the circulation of optimizing SiCN to reach re-uses object, increases the number of times of reusing of silicon chip, reduces production costs.
Accompanying drawing explanation
By the more specifically explanation of the preferred embodiments of the present invention shown in accompanying drawing, above-mentioned and other object of the present invention, Characteristics and advantages will be more clear.In whole accompanying drawings, identical Reference numeral is indicated identical part.Deliberately by actual size equal proportion convergent-divergent, do not draw accompanying drawing, focus on illustrating purport of the present invention.
Fig. 1 is the circular regeneration process chart of SiCN monitoring piece of the present invention;
Fig. 2 is the circular regeneration process schematic representation of SiCN monitoring piece of the present invention.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the invention are elaborated: the present embodiment is implemented take technical solution of the present invention under prerequisite, provided detailed execution mode, but protection scope of the present invention is not limited to following embodiment.
The Recycling that the present invention is directed to the SiCN monitoring piece of daily production monitoring use, is used a kind of new cineration technics, by using the stronger O of oxidability 3plasma (O 3plasma) substitute the O in traditional handicraft 2plasma, carries out ashing removal to the C element in SiCN film.
With oxygen (O 2) compare ozone (O 3) oxidability stronger, and more easily form oxygen radical.C element reaction in oxygen radical and SiCN film forms CO or CO 2be pulled out; The reduction of SiCN film is formed after similar SiN film, by corresponding acid (being generally HF), film can be removed.
O 3plasma and O 2plasma is compared, and has stronger oxidability, and its dissociation principle is compared as follows:
O 2plasma dissociation principle:
1.e+O 2→e+O+O
2.e+O→2e+O +
O 3plasma dissociation principle:
1.e+O 3→e+O 2+O
2.e+O→2e+O +
From above principle, relatively can find out O 3cineration technics and O 2difference between cineration technics is mainly first step dissociation, O 2dissociation energy larger, be 498.34kJmol -1; And O 3dissociation energy is less, is 142.67kJmol -1, just can dissociation under lower energy, and O 3oxidability compare O 2by force.Therefore, use O 3plasma substitutes O 2plasma can improve the ability of removing C element greatly, to realize the circulation of SiCN, re-uses object.
Shown in Fig. 1 and Fig. 2, the invention discloses a kind of circular regeneration technique of the monitoring piece containing SiCN film of optimization, comprise the steps: S1, SiCN monitoring piece is carried out to O 3plasma ashing is processed, and the C element reaction in oxygen radical and SiCN film forms CO or CO 2be pulled out; S2, carries out hydrofluoric acid wet etching to monitoring piece; S3, carries out granule detecting and film thickness measuring, to confirm circular regeneration effect; S4, silicon chip drops into Recycling.
The present invention uses O 3cineration technics replaces traditional O 2cineration technics, O 3can be at more low-yield lower formation oxygen radical, so O 3plasma and O 2plasma is compared, and oxidability is stronger, thereby the removal ability of C element is also stronger, and the circulation of optimizing SiCN to reach re-uses object, increases the number of times of reusing of silicon chip, reduces production costs.
Although the present invention with preferred embodiment openly as above; but it is not for limiting claim; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that the claims in the present invention were defined.

Claims (2)

1. a removal method for C element in SiCN film, is characterized in that: use O 3plasma carries out ashing processing to the C element in SiCN film, and the C element reaction in oxygen radical and SiCN film forms CO or CO 2be pulled out.
2. containing a monitoring piece regeneration technology for SiCN film, it is characterized in that comprising the steps: S1, SiCN monitoring piece is carried out to O 3plasma ashing is processed, and the C element reaction in oxygen radical and SiCN film forms CO or CO 2be pulled out; S2, carries out hydrofluoric acid wet etching to monitoring piece; S3, carries out granule detecting and film thickness measuring, to confirm circular regeneration effect; S4, silicon chip drops into Recycling.
CN201310625633.7A 2013-11-28 2013-11-28 A method for removing a C element in a SiCN thin film and a cyclic regeneration processing technique of a monitoring sheet containing the SiCN thin film Pending CN103646915A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110190514A (en) * 2019-06-04 2019-08-30 厦门乾照半导体科技有限公司 A kind of VCSEL chip preparation method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000173883A (en) * 1998-12-09 2000-06-23 Sony Corp Baking device
US20030066549A1 (en) * 2000-09-28 2003-04-10 Seiji Noda Substrate processing method, and apparatus therefor
US20040183162A1 (en) * 2003-01-29 2004-09-23 Nec Electronics Corporation Semiconductor device, and production method for manufacturing such semiconductor device
CN101206993A (en) * 2006-12-18 2008-06-25 中芯国际集成电路制造(上海)有限公司 Method for reutilization of BD control retaining plate
CN102610562A (en) * 2012-03-23 2012-07-25 上海华力微电子有限公司 Method for removing carbon element in carbon-contained thin film and regenerating method of SiOC control baffle plate
CN102610493A (en) * 2012-03-22 2012-07-25 上海华力微电子有限公司 Method for removing amorphous carbon films for cyclically utilizing silicon chips

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000173883A (en) * 1998-12-09 2000-06-23 Sony Corp Baking device
US20030066549A1 (en) * 2000-09-28 2003-04-10 Seiji Noda Substrate processing method, and apparatus therefor
US20040183162A1 (en) * 2003-01-29 2004-09-23 Nec Electronics Corporation Semiconductor device, and production method for manufacturing such semiconductor device
CN101206993A (en) * 2006-12-18 2008-06-25 中芯国际集成电路制造(上海)有限公司 Method for reutilization of BD control retaining plate
CN102610493A (en) * 2012-03-22 2012-07-25 上海华力微电子有限公司 Method for removing amorphous carbon films for cyclically utilizing silicon chips
CN102610562A (en) * 2012-03-23 2012-07-25 上海华力微电子有限公司 Method for removing carbon element in carbon-contained thin film and regenerating method of SiOC control baffle plate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110190514A (en) * 2019-06-04 2019-08-30 厦门乾照半导体科技有限公司 A kind of VCSEL chip preparation method
CN110190514B (en) * 2019-06-04 2020-03-24 厦门乾照半导体科技有限公司 VCSEL chip preparation method

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Application publication date: 20140319