CN103633236A - 芯核置换式大功率发光半导体器件及其制造方法 - Google Patents
芯核置换式大功率发光半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN103633236A CN103633236A CN201310664283.5A CN201310664283A CN103633236A CN 103633236 A CN103633236 A CN 103633236A CN 201310664283 A CN201310664283 A CN 201310664283A CN 103633236 A CN103633236 A CN 103633236A
- Authority
- CN
- China
- Prior art keywords
- electrode
- double
- screw bolt
- base board
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000012634 fragment Substances 0.000 claims description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 27
- 239000010949 copper Substances 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 27
- 239000003795 chemical substances by application Substances 0.000 claims description 17
- 238000009434 installation Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011148 porous material Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 8
- 238000005187 foaming Methods 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 description 63
- 239000002184 metal Substances 0.000 description 63
- 239000006260 foam Substances 0.000 description 45
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 36
- 239000000463 material Substances 0.000 description 27
- 229910052697 platinum Inorganic materials 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 239000000084 colloidal system Substances 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 239000004411 aluminium Substances 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 10
- 239000000428 dust Substances 0.000 description 10
- 238000011049 filling Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000741 silica gel Substances 0.000 description 5
- 229910002027 silica gel Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910001260 Pt alloy Inorganic materials 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 4
- 238000009766 low-temperature sintering Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 239000011135 tin Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 2
- 229910000629 Rh alloy Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000005518 electrochemistry Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000006261 foam material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 230000002101 lytic effect Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000010930 yellow gold Substances 0.000 description 2
- 229910001097 yellow gold Inorganic materials 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310664283.5A CN103633236B (zh) | 2013-12-10 | 2013-12-10 | 芯核置换式大功率发光半导体器件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310664283.5A CN103633236B (zh) | 2013-12-10 | 2013-12-10 | 芯核置换式大功率发光半导体器件及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103633236A true CN103633236A (zh) | 2014-03-12 |
CN103633236B CN103633236B (zh) | 2016-05-18 |
Family
ID=50214046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310664283.5A Active CN103633236B (zh) | 2013-12-10 | 2013-12-10 | 芯核置换式大功率发光半导体器件及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103633236B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104064656A (zh) * | 2014-06-25 | 2014-09-24 | 晶科电子(广州)有限公司 | 一种具有良好防潮性能的led支架及其led器件和制备方法 |
CN106098564A (zh) * | 2016-06-17 | 2016-11-09 | 重庆大学 | 用SiC作为基片的大功率半导体封装构造及其方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2918982Y (zh) * | 2006-06-02 | 2007-07-04 | 于深 | Led大功率照明光源模块 |
US20080130275A1 (en) * | 2006-12-01 | 2008-06-05 | Cree, Inc. | LED Socket and Replaceable LED Assemblies |
CN101334154A (zh) * | 2008-07-31 | 2008-12-31 | 沈铁 | 一种具有散热模块结构的大功率led灯 |
CN202546319U (zh) * | 2012-01-05 | 2012-11-21 | 宁波舒能光电科技发展有限公司 | 一种led球泡灯 |
-
2013
- 2013-12-10 CN CN201310664283.5A patent/CN103633236B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2918982Y (zh) * | 2006-06-02 | 2007-07-04 | 于深 | Led大功率照明光源模块 |
US20080130275A1 (en) * | 2006-12-01 | 2008-06-05 | Cree, Inc. | LED Socket and Replaceable LED Assemblies |
CN101334154A (zh) * | 2008-07-31 | 2008-12-31 | 沈铁 | 一种具有散热模块结构的大功率led灯 |
CN202546319U (zh) * | 2012-01-05 | 2012-11-21 | 宁波舒能光电科技发展有限公司 | 一种led球泡灯 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104064656A (zh) * | 2014-06-25 | 2014-09-24 | 晶科电子(广州)有限公司 | 一种具有良好防潮性能的led支架及其led器件和制备方法 |
CN104064656B (zh) * | 2014-06-25 | 2017-11-17 | 广东晶科电子股份有限公司 | 一种具有防潮性能的led支架及其led器件和制备方法 |
CN106098564A (zh) * | 2016-06-17 | 2016-11-09 | 重庆大学 | 用SiC作为基片的大功率半导体封装构造及其方法 |
Also Published As
Publication number | Publication date |
---|---|
CN103633236B (zh) | 2016-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3190616B1 (en) | A led light with omnidirectional light distribution | |
CN103490037B (zh) | 电化学装置 | |
CN111550687A (zh) | Led球泡灯 | |
JP2009135440A (ja) | 散熱機能を有する発光デバイスとそのようなデバイスを製造するプロセス | |
US9625142B2 (en) | Luminaire | |
US20150276143A1 (en) | Easily-assembled cob lamp bead, support for the lamp bead, method for manufacturing the lamp bead, and easily-assembled led module | |
US11346507B2 (en) | LED lamp | |
CN103633236B (zh) | 芯核置换式大功率发光半导体器件及其制造方法 | |
CN214176062U (zh) | 一种散热结构、光源以及照明设备 | |
CN202188328U (zh) | 具有高效散热电源组件的led灯具 | |
US20130250562A1 (en) | Wiring board device, luminaire, and manufacturing method of the wiring board device | |
CN113644186B (zh) | 一种倒装led芯片的封装结构 | |
CN105789418A (zh) | 胶状物及发光二极管封装结构 | |
JP4471683B2 (ja) | Led信号電球および色灯信号機 | |
CN103822143A (zh) | 硅基led路灯光源模块 | |
JP3163195U (ja) | 照明装置用の発光ダイオード固定構造 | |
JP2014038731A (ja) | 車両用灯具の半導体型光源、車両用灯具の半導体型光源ユニット、車両用灯具 | |
CN211450400U (zh) | Led灯泡 | |
JP4797621B2 (ja) | 半導体装置およびその製造方法 | |
CN203836739U (zh) | 硅基led路灯光源模块 | |
CN102280427A (zh) | 一种金属与塑料混合封装的可控硅封装结构及其方法 | |
CN201326927Y (zh) | 高功率白光led光源模块封装结构 | |
JP2010021426A (ja) | 発光装置 | |
CN104864285A (zh) | Led灯泡及组装工艺 | |
CN215184998U (zh) | 一种激光器器件 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
CB03 | Change of inventor or designer information |
Inventor after: Cai Decheng Inventor after: Lu Yang Inventor after: Zhang Yueqiang Inventor after: Liang Guangyong Inventor before: Liang Guangyong |
|
COR | Change of bibliographic data | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160204 Address after: The Town Lake Anxi County of Quanzhou City, Fujian province 362411 Photoelectric Industrial Park Applicant after: FUJIAN LIGHTNING OPTOELECTRONIC CO., LTD. Address before: 546508 the Guangxi Zhuang Autonomous Region Heshan City Heshan Mining Bureau in the blue region three 29-2-5 Applicant before: Liang Guangyong |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |