CN103614696A - Preparation method of corrosion-resistant thin film - Google Patents
Preparation method of corrosion-resistant thin film Download PDFInfo
- Publication number
- CN103614696A CN103614696A CN201310552861.6A CN201310552861A CN103614696A CN 103614696 A CN103614696 A CN 103614696A CN 201310552861 A CN201310552861 A CN 201310552861A CN 103614696 A CN103614696 A CN 103614696A
- Authority
- CN
- China
- Prior art keywords
- layer
- sputtering
- argon gas
- preparation
- magnetron sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a preparation method of a corrosion-resistant thin film. The preparation method comprises the following steps: A) performing magnetron sputtering of a Bi2O3 layer on a transparent heat-resistant base plate by a direct current power supply sputtering Bi planar target; B) performing magnetron sputtering of a TiOx layer on the Bi2O3 layer by an alternating current power supply sputtering titanium oxide ceramic rotating target; C) performing magnetron sputtering of a CrNx layer on the TiOx layer by a direct current power supply sputtering chromium planar target; D) performing magnetron sputtering of a Cu layer on the CrNx layer by a direct current power supply sputtering copper planar target; E) performing magnetron sputtering of a NiCr layer on the Cu layer by a direct current power supply sputtering NiCr alloy planar target; and F) performing magnetron sputtering of a ZnSnO3 layer on the NiCr layer by an alternating current power supply sputtering ZnSn alloy rotating target. The invention aims at overcoming the shortcomings in the prior art and providing the preparation method of the corrosion-resistant thin film, which has the advantages of simple process, convenience in operation and relatively low production cost.
Description
Technical field
The present invention relates to a kind of preparation method of etching resistant film.
Background technology
Low emissivity glass refers to that ir radiation is had to high-reflectivity, visible ray is had to the flat plate film coating glass of good transmissivity.Low emissivity glass has good printing opacity, insulation, heat-proof quality, is widely used in the places such as window, fire door, refrigerator door.
More common low emissivity glass has single silver-layer low-radiation glass, two silver-layer low-radiation glass, thermal control low emissivity glass and titanium base low emissivity glass etc. in the market.Existing these four kinds of low emissivity glasses are not high enough in the visible wavelength range internal transmission factor of 380～780 nanometers, are only 50% left and right; Higher in ir radiation wavelength region internal transmission factor, especially the wavelength region internal transmission factor in 900～1100 nanometers is between 10～20%.In addition, the wear resistance of these glass is conventionally good not.
And the rotproofness of existing transparent substrate is relative with thermotolerance poor, so existing transparent substrate awaits progressive perfect.
Summary of the invention
The object of the invention is, in order to overcome weak point of the prior art, provides a kind of technique simple, easy to operate, the preparation method of the etching resistant film that production cost is relatively low.
In order to achieve the above object, the present invention adopts following scheme:
A preparation method for etching resistant film, is characterized in that comprising the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter Bi planar target, magnetron sputtering Bi on transparency and heat-proof substrate
2o
3layer;
B, adopt argon gas as reactant gases, AC power sputter titanium oxide ceramics rotary target, Bi in steps A
2o
3magnetron sputtering TiO on layer
xlayer;
C, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, the TiO in step B
xmagnetron sputtering C rN on layer
xlayer;
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, the CrN in step C
xmagnetron sputtering C u layer on layer;
E, adopt argon gas as reactant gases, direct supply sputtering NiCr alloy planar target, magnetron sputtering NiCr layer on the Cu layer in step D;
F, adopt oxygen as reactant gases, argon gas is as shielding gas, AC power sputter ZnSn alloy rotary target, magnetron sputtering ZnSnO on the NiCr layer in step e
3layer.
The preparation method of a kind of etching resistant film as above, is characterized in that Bi described in steps A
2o
3the thickness of layer is 10～15nm, and the volume ratio of oxygen and argon gas is 1:2, and the sputtering power of described direct supply is 15～20KW.
The preparation method of a kind of etching resistant film as above, is characterized in that TiO described in step B
xthe thickness of layer is 10～15nm, the sputtering power 50～75KW of described AC power.
The preparation method of a kind of etching resistant film as above, is characterized in that CrN described in step C
xthe thickness of layer is 3～5nm, and the volume ratio of described nitrogen and argon gas is 1:2, the sputtering power 3～6KW of described direct supply.
The preparation method of a kind of etching resistant film as above, is characterized in that the thickness of Cu layer is 10～20nm described in step D, the sputtering power 3～6KW of described direct supply.
The preparation method of a kind of etching resistant film as above, the thickness that it is characterized in that the layer of NiCr described in step e is 3～5nm, the mol ratio 21:79 of Ni:Cr in described NiCr alloy, the sputtering power 3～5KW of described direct supply.
The preparation method of a kind of etching resistant film as above, is characterized in that ZnSnO described in F
3the thickness of layer is 20～30nm, the mol ratio 48:52 of Zn:Sn in described ZnSn alloy rotary target, and the volume ratio of described argon gas and oxygen is 1:2, the sputtering power of described AC power is 50～75KW.
The preparation method of a kind of etching resistant film as above, is characterized in that transparency and heat-proof substrate is transparent glass.
In sum, beneficial effect of the present invention:
Processing method of the present invention is simple, easy to operate, and production cost is relatively low.Product erosion resistance is strong, less demanding to substrate clean level in production process, product transmittance T >=65% of the present invention, radiant ratio E≤0.15.
Embodiment
Below in conjunction with embodiment, the present invention is described further:
Embodiment 1
The preparation method of a kind of etching resistant film of the present invention, comprises the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter Bi planar target, magnetron sputtering Bi on transparency and heat-proof substrate
2o
3layer; Wherein said Bi
2o
3the thickness of layer is 10nm, and the volume ratio of oxygen and argon gas is 1:2, i.e. oxygen: argon gas=500sccm:1000sccm, and the sputtering power of described direct supply is 15KW, and wherein said transparency and heat-proof substrate is transparent glass;
B, employing argon gas are as reactant gases, and the volumetric flow rate of argon gas is 800sccm, AC power sputter titanium oxide ceramics rotary target, Bi in steps A
2o
3magnetron sputtering TiO on layer
xlayer; Wherein said TiO
xthe thickness of layer is 10nm, the sputtering power 50KW of described AC power;
C, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, the TiO in step B
xmagnetron sputtering C rN on layer
xlayer; Wherein said CrN
xthe thickness of layer is 3nm, and the volume ratio of described nitrogen and argon gas is 1:2, i.e. nitrogen and argon gas=500sccm:1000sccm, the sputtering power 3KW of described direct supply;
D, employing argon gas are as reactant gases, and the volumetric flow rate of argon gas is 1000sccm direct supply sputter copper planar target, the CrN in step C
xmagnetron sputtering C u layer on layer; The thickness of wherein said Cu layer is 10nm, the sputtering power 3KW of described direct supply;
E, employing argon gas are as reactant gases, and the volumetric flow rate of argon gas is 1000sccm, direct supply sputtering NiCr alloy planar target, magnetron sputtering NiCr layer on the Cu layer in step D; The thickness of described NiCr layer is 3nm, the mol ratio 21:79 of Ni:Cr in described NiCr alloy, the sputtering power 3KW of described direct supply;
F, adopt oxygen as reactant gases, argon gas is as shielding gas, AC power sputter ZnSn alloy rotary target, magnetron sputtering ZnSnO on the NiCr layer in step e
3layer; Described ZnSnO
3the thickness of layer is 20nm, the mol ratio 48:52 of Zn:Sn in described ZnSn alloy rotary target, and the volume ratio of described argon gas and oxygen is 1:2, argon gas and oxygen=500sccm:1000sccm, the sputtering power of described AC power is 50KW.
Embodiment 2
The preparation method of a kind of etching resistant film of the present invention, comprises the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter Bi planar target, magnetron sputtering Bi on transparency and heat-proof substrate
2o
3layer; Wherein said Bi
2o
3the thickness of layer is 12nm, and the volume ratio of oxygen and argon gas is 1:2, i.e. oxygen: argon gas=500sccm:1000sccm,, the sputtering power of described direct supply is 18KW, wherein said transparency and heat-proof substrate is transparent glass;
B, employing argon gas are as reactant gases, and the volumetric flow rate of argon gas is 800sccm, AC power sputter titanium oxide ceramics rotary target, Bi in steps A
2o
3magnetron sputtering TiO on layer
xlayer; Wherein said TiO
xthe thickness of layer is 13nm, the sputtering power 60KW of described AC power;
C, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, the TiO in step B
xmagnetron sputtering C rN on layer
xlayer; Wherein said CrN
xthe thickness of layer is 4nm, and the volume ratio of described nitrogen and argon gas is 1:2, i.e. nitrogen and argon gas=500sccm:1000sccm, the sputtering power 5KW of described direct supply;
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, the CrN in step C
xmagnetron sputtering C u layer on layer; The thickness of wherein said Cu layer is 15nm, the sputtering power 4KW of described direct supply;
E, employing argon gas are as reactant gases, and the volumetric flow rate of argon gas is 1000sccm, direct supply sputtering NiCr alloy planar target, magnetron sputtering NiCr layer on the Cu layer in step D; The thickness of described NiCr layer is 4nm, the mol ratio 21:79 of Ni:Cr in described NiCr alloy, the sputtering power 4KW of described direct supply;
F, adopt oxygen as reactant gases, argon gas is as shielding gas, AC power sputter ZnSn alloy rotary target, magnetron sputtering ZnSnO on the NiCr layer in step e
3layer.Described ZnSnO
3the thickness of layer is 25nm, the mol ratio 48:52 of Zn:Sn in described ZnSn alloy rotary target, and the volume ratio of described argon gas and oxygen is 1:2, argon gas and oxygen=500sccm:1000sccm, the sputtering power of described AC power is 63KW.
Embodiment 3
The preparation method of a kind of etching resistant film of the present invention, comprises the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter Bi planar target, magnetron sputtering Bi on transparency and heat-proof substrate
2o
3layer; Wherein said Bi
2o
3the thickness of layer is 15nm, and the volume ratio of oxygen and argon gas is 1:2, i.e. oxygen: argon gas=500sccm:1000sccm,, the sputtering power of described direct supply is 20KW, wherein said transparency and heat-proof substrate is transparent glass;
B, employing argon gas are as reactant gases, and the volumetric flow rate of argon gas is 800sccm, AC power sputter titanium oxide ceramics rotary target, Bi in steps A
2o
3magnetron sputtering TiO on layer
xlayer; Wherein said TiO
xthe thickness of layer is 15nm, the sputtering power 75KW of described AC power;
C, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, the TiO in step B
xmagnetron sputtering C rN on layer
xlayer; Wherein said CrN
xthe thickness of layer is 5nm, and the volume ratio of described nitrogen and argon gas is 1:2, i.e. nitrogen and argon gas=500sccm:1000sccm, the sputtering power 6KW of described direct supply;
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, the CrN in step C
xmagnetron sputtering C u layer on layer; The thickness of wherein said Cu layer is 20nm, the sputtering power 6KW of described direct supply;
E, employing argon gas are as reactant gases, and the volumetric flow rate of argon gas is 1000sccm, direct supply sputtering NiCr alloy planar target, magnetron sputtering NiCr layer on the Cu layer in step D; The thickness of described NiCr layer is 5nm, the mol ratio 21:79 of Ni:Cr in described NiCr alloy, the sputtering power 5KW of described direct supply;
F, adopt oxygen as reactant gases, argon gas is as shielding gas, AC power sputter ZnSn alloy rotary target, magnetron sputtering ZnSnO on the NiCr layer in step e
3layer.Described ZnSnO
3the thickness of layer is 30nm, the mol ratio 48:52 of Zn:Sn in described ZnSn alloy rotary target, and the volume ratio of described argon gas and oxygen is 1:2, argon gas and oxygen=500sccm:1000sccm, the sputtering power of described AC power is 75KW.
More than show and described ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification sheets, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (8)
1. a preparation method for etching resistant film, is characterized in that comprising the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter Bi planar target, magnetron sputtering Bi on transparency and heat-proof substrate
2o
3layer;
B, adopt argon gas as reactant gases, AC power sputter titanium oxide ceramics rotary target, Bi in steps A
2o
3magnetron sputtering TiO on layer
xlayer;
C, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, the TiO in step B
xmagnetron sputtering C rN on layer
xlayer;
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, the CrN in step C
xmagnetron sputtering C u layer on layer;
E, adopt argon gas as reactant gases, direct supply sputtering NiCr alloy planar target, magnetron sputtering NiCr layer on the Cu layer in step D;
F, adopt oxygen as reactant gases, argon gas is as shielding gas, AC power sputter ZnSn alloy rotary target, magnetron sputtering ZnSnO on the NiCr layer in step e
3layer.
2. the preparation method of a kind of etching resistant film according to claim 1, is characterized in that Bi described in steps A
2o
3the thickness of layer is 10～15nm, and the volume ratio of oxygen and argon gas is 1:2, and the sputtering power of described direct supply is 15～20KW.
3. the preparation method of a kind of etching resistant film according to claim 1, is characterized in that TiO described in step B
xthe thickness of layer is 10～15nm, the sputtering power 50～75KW of described AC power.
4. the preparation method of a kind of etching resistant film according to claim 1, is characterized in that CrN described in step C
xthe thickness of layer is 3～5nm, and the volume ratio of described nitrogen and argon gas is 1:2, the sputtering power 3～6KW of described direct supply.
5. the preparation method of a kind of etching resistant film according to claim 1, is characterized in that the thickness of Cu layer is 10～20nm described in step D, the sputtering power 3～6KW of described direct supply.
6. the preparation method of a kind of etching resistant film according to claim 1, the thickness that it is characterized in that the layer of NiCr described in step e is 3～5nm, the mol ratio 21:79 of Ni:Cr in described NiCr alloy, the sputtering power 3～5KW of described direct supply.
7. the preparation method of a kind of etching resistant film according to claim 1, is characterized in that ZnSnO described in F
3the thickness of layer is 20～30nm, the mol ratio 48:52 of Zn:Sn in described ZnSn alloy rotary target, and the volume ratio of described argon gas and oxygen is 1:2, the sputtering power of described AC power is 50～75KW.
8. the preparation method of a kind of etching resistant film according to claim 1, is characterized in that transparency and heat-proof substrate is transparent glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310552861.6A CN103614696B (en) | 2013-11-07 | 2013-11-07 | A kind of preparation method of etching resistant film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310552861.6A CN103614696B (en) | 2013-11-07 | 2013-11-07 | A kind of preparation method of etching resistant film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103614696A true CN103614696A (en) | 2014-03-05 |
| CN103614696B CN103614696B (en) | 2016-02-03 |
Family
ID=50165410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310552861.6A Active CN103614696B (en) | 2013-11-07 | 2013-11-07 | A kind of preparation method of etching resistant film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103614696B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107740061A (en) * | 2017-10-27 | 2018-02-27 | 中山市汉庭照明科技有限公司 | A kind of method for preparing corrosion-resistant Crystal lamp suspension member |
| CN107740975A (en) * | 2017-10-27 | 2018-02-27 | 中山市汉庭照明科技有限公司 | A kind of corrosion-resistant Crystal lamp suspension member |
| WO2021159680A1 (en) * | 2020-08-17 | 2021-08-19 | 广东省科学院测试分析研究所(中国广州分析测试中心) | Inverted heating method for preparing oxidized bismuth nanowire thin film |
| CN115928015A (en) * | 2022-11-25 | 2023-04-07 | 广东省人民医院 | Titanium surface modification method with osteogenesis promoting and immunoregulation performances |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88101655A (en) * | 1987-03-26 | 1988-11-23 | Ppg工业公司 | Bismuth/sputtered films of bismuth/tin oxide |
| CN102372447A (en) * | 2010-08-24 | 2012-03-14 | 中国南玻集团股份有限公司 | Low emissivity glass containing silver |
| FR2973023A1 (en) * | 2011-03-25 | 2012-09-28 | Saint Gobain | MULTIPLE INSULATION GLAZING COMPRISING TWO LOW EMISSIVE STACKS |
| CN102786231A (en) * | 2012-08-24 | 2012-11-21 | 福耀玻璃工业集团股份有限公司 | Low-eradiation coated glass available for heat treatment and sandwich glass products thereof |
| CN102951855A (en) * | 2012-11-26 | 2013-03-06 | 中山市创科科研技术服务有限公司 | High-transmittance single-silver low-emissivity glass beneficial to toughening treatment |
| WO2013057425A1 (en) * | 2011-10-21 | 2013-04-25 | Saint-Gobain Glass France | Solar control glazing comprising a layer of an alloy containing nicu |
-
2013
- 2013-11-07 CN CN201310552861.6A patent/CN103614696B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88101655A (en) * | 1987-03-26 | 1988-11-23 | Ppg工业公司 | Bismuth/sputtered films of bismuth/tin oxide |
| CN102372447A (en) * | 2010-08-24 | 2012-03-14 | 中国南玻集团股份有限公司 | Low emissivity glass containing silver |
| FR2973023A1 (en) * | 2011-03-25 | 2012-09-28 | Saint Gobain | MULTIPLE INSULATION GLAZING COMPRISING TWO LOW EMISSIVE STACKS |
| WO2013057425A1 (en) * | 2011-10-21 | 2013-04-25 | Saint-Gobain Glass France | Solar control glazing comprising a layer of an alloy containing nicu |
| CN102786231A (en) * | 2012-08-24 | 2012-11-21 | 福耀玻璃工业集团股份有限公司 | Low-eradiation coated glass available for heat treatment and sandwich glass products thereof |
| CN102951855A (en) * | 2012-11-26 | 2013-03-06 | 中山市创科科研技术服务有限公司 | High-transmittance single-silver low-emissivity glass beneficial to toughening treatment |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107740061A (en) * | 2017-10-27 | 2018-02-27 | 中山市汉庭照明科技有限公司 | A kind of method for preparing corrosion-resistant Crystal lamp suspension member |
| CN107740975A (en) * | 2017-10-27 | 2018-02-27 | 中山市汉庭照明科技有限公司 | A kind of corrosion-resistant Crystal lamp suspension member |
| WO2021159680A1 (en) * | 2020-08-17 | 2021-08-19 | 广东省科学院测试分析研究所(中国广州分析测试中心) | Inverted heating method for preparing oxidized bismuth nanowire thin film |
| CN115928015A (en) * | 2022-11-25 | 2023-04-07 | 广东省人民医院 | Titanium surface modification method with osteogenesis promoting and immunoregulation performances |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103614696B (en) | 2016-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103614696B (en) | A kind of preparation method of etching resistant film | |
| CN106186723B (en) | Saturating light blue bendable steel Three-silver-layer low-radiation coated glass and preparation process in one kind | |
| CN101531471A (en) | Toughened low-radiation coated glass with double-silver composite structure and technique thereof | |
| CN104230182A (en) | Preparation method of high-transmittance tempered low-emissivity coated glass | |
| CN103741102B (en) | A kind of making method of Crystal lamp suspension member glass | |
| CN105130209A (en) | High-transmittance low-cost color-adjustable low-radiation energy-saving glass and preparation method thereof | |
| CN103613286A (en) | Preparation method of golden thin film | |
| CN102501451A (en) | Temperable di-silver low-emissivity coated glass and manufacturing process thereof | |
| CN102092960A (en) | Low emissivity glass | |
| CN205874224U (en) | Low -emissivity coated glass is passed through to superelevation | |
| CN103641333B (en) | A kind of preparation method of Super high-permeability high-performance low-radiation membrane | |
| CN103771726A (en) | Production method of low-emissivity glass | |
| CN103395239A (en) | Low-radiation thin film with silicon-aluminum nitride medium layer and preparation technology thereof | |
| CN103879080A (en) | Three-silver-layer low-radiation glass and preparation method thereof | |
| CN102951855A (en) | High-transmittance single-silver low-emissivity glass beneficial to toughening treatment | |
| CN202344955U (en) | Toughened double-silver low-radiation coated glass | |
| CN103613285B (en) | A kind of preparation method of low-cost anti-radiation film | |
| CN203238177U (en) | Tri-sliver low-radiation coated glass capable of being tempered | |
| CN106116176A (en) | A kind of coral magnetron sputtering low radiation coated glass production technology | |
| CN103643208B (en) | A kind of preparation method of high film | |
| CN103265182A (en) | Manufacturing method of low emissivity (Low-e) glass | |
| CN103641332A (en) | Low-cost gold low-radiant ratio film preparation method | |
| CN110818281A (en) | 3D glass and manufacturing method thereof | |
| CN203864111U (en) | Novel low-emissivity glass | |
| CN103755155A (en) | Manufacturing method of unidirectional visual low-radiation glass |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181214 Address after: 528400 One of No. 2, 1st Street, Baigang, Fairly Fair, Torch Development Zone, Zhongshan City, Guangdong Province (2nd Floor, 8th Building) Patentee after: ZHONGSHAN GUANGWEI OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 528400 Pioneer Building 229, Torch Development Zone, Zhongshan City, Guangdong Province Patentee before: ZHONGSHAN CITY CHUANGKE SCIENTIFIC RESEARCH TECHNOLOGY SERVICE Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A kind of preparation method of corrosion-resistant film Effective date of registration: 20220729 Granted publication date: 20160203 Pledgee: Science and Technology Branch of Torch Development Zone of Zhongshan Rural Commercial Bank Co.,Ltd. Pledgor: ZHONGSHAN GUANGWEI OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Registration number: Y2022980011617 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right |