CN103641332A - Low-cost gold low-radiant ratio film preparation method - Google Patents
Low-cost gold low-radiant ratio film preparation method Download PDFInfo
- Publication number
- CN103641332A CN103641332A CN201310567780.3A CN201310567780A CN103641332A CN 103641332 A CN103641332 A CN 103641332A CN 201310567780 A CN201310567780 A CN 201310567780A CN 103641332 A CN103641332 A CN 103641332A
- Authority
- CN
- China
- Prior art keywords
- layer
- sputtering
- low
- argon gas
- magnetron sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a low-cost gold low-radiant ratio film preparation method, which comprises the following steps: A) sputtering stainless steel plane target with direct current, performing magnetron sputtering on an SSTOx layer on a glass substrate; B)sputtering chromium plane target with direct current source, performing magnetron sputtering a CrNx layer on the SSTOx layer; C) sputtering silver plane target with direct current source, performing magnetron sputtering an Ag layer on the CrNx layer; D) sputtering copper plane target with direct current source, performing magnetron sputtering a Si layer on the Ag layer; E) sputtering aluminum-doped zinc oxide ceramic rotation target with alternate current source, performing magnetron sputtering an AZO layer on the Si layer; F) sputtering copper plane target with direct current source, performing magnetron sputtering a Cu layer on the AZO layer; G) sputtering aluminum-doped zinc oxide ceramic rotation target with alternate current source, performing magnetron sputtering the AZO layer on the Cu layer; and H)sputtering silicon-aluminum alloy rotation target with alternate current source, and performing magnetron sputtering the SiO2 layer on the AZO layer. The preparation method of the membrane has the advantages of simple process, convenient operation and relatively low production cost.
Description
Technical field
The present invention relates to a kind of preparation method of low-cost golden low radiation rate film.
Background technology
Low emissivity glass refers to that ir radiation is had to high-reflectivity, visible ray is had to the flat plate film coating glass of good transmissivity.Low emissivity glass has good printing opacity, insulation, heat-proof quality, is widely used in the places such as window, fire door, refrigerator door.
More common low emissivity glass has single silver-layer low-radiation glass, two silver-layer low-radiation glass, thermal control low emissivity glass and titanium base low emissivity glass etc. in the market.Existing these four kinds of low emissivity glasses are not high enough in the visible wavelength range internal transmission factor of 380～780 nanometers, are only 50% left and right; Higher in ir radiation wavelength region internal transmission factor, especially the wavelength region internal transmission factor in 900～1100 nanometers is between 10～20%.So existing clear glass substrate awaits progressive perfect.
Summary of the invention
The object of the invention is, in order to overcome weak point of the prior art, provides a kind of technique simple, easy to operate, the preparation of the two silver-colored LOW-E films of gold that production cost is relatively low.
In order to achieve the above object, the present invention adopts following scheme:
A preparation method for low-cost golden low radiation rate film, is characterized in that comprising the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter stainless steel planar target, magnetron sputtering SSTO on glass substrate
xlayer;
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, magnetron sputtering C rN on SSTOx layer in steps A
xlayer;
C, adopt argon gas as reactant gases, direct supply sputtering silver planar target, the CrN in step B
xmagnetron sputtering Ag layer on layer;
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering Si layer on Ag layer in step C;
E, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Si layer in step D;
F, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering C u layer on the AZO layer in step e;
G, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Cu layer in step F;
H, employing oxygen are as reactant gases, and argon gas is as shielding gas, and AC power sputtered silicon aluminium alloy rotates target, magnetron sputtering SiO on the AZO layer in step G
2layer.
The preparation method of a kind of low-cost golden low radiation rate film as above, the thickness that it is characterized in that the layer of SSTOx described in steps A is 30～45nm, the volume ratio of described argon gas and oxygen is 1:2, and the sputtering power that described direct supply spatters is 75～115KW, minute two cathode sputterings.
The preparation method of a kind of low-cost golden low radiation rate film as above, is characterized in that CrN described in step B
xthe thickness of layer is 3～5nm, and the volume ratio of argon gas and nitrogen is 1:2, the sputtering power 3～6KW of described direct supply sputter chromium planar target.
The preparation method of a kind of low-cost golden low radiation rate film as above, the thickness that it is characterized in that Ag layer described in step C is 8～10nm, the sputtering power 4～5KW of described direct supply.
The preparation method of a kind of low-cost golden low radiation rate film as above, is characterized in that the thickness of Si layer is 10～20nm described in step D, the sputtering power 3～6KW of described direct supply.
The preparation method of a kind of low-cost golden low radiation rate film as above, the thickness that it is characterized in that the layer of AZO described in step e is 50～65nm, in Al-Doped ZnO pottery rotary target, mix by mass percentage aluminium 2%, the sputtering power 50～65KW of described alternating-current; With three rotating cathode sputters.
The preparation method of a kind of low-cost golden low radiation rate film as above, the thickness that it is characterized in that the layer of Cu described in step F is 8～10nm, the sputtering power of described direct supply is 4～5KW.
The preparation method of a kind of low-cost golden low radiation rate film as above, the thickness that it is characterized in that AZO layer described in step G is 20～25nm, in Al-Doped ZnO pottery rotary target, mix by mass percentage aluminium 2%, the sputtering power of described AC power is 20～25KW.
The preparation method of a kind of low-cost golden low radiation rate film as above, is characterized in that SiO described in step H
2the thickness of layer is 20～30nm, and in described silumin rotary target, the mol ratio of Si and Al is 92:8, and AC power sputtering power is 50～75KW.
In sum, beneficial effect of the present invention:
Processing method of the present invention is simple, easy to operate, and production cost is relatively low, and film layer structure is minimum, and negative electrode usage quantity is few; Cost-saving; 24K gold tone, bright-colored; With Ag and Cu, substituting Au significantly reduces costs.
Embodiment
Below in conjunction with embodiment, the present invention is described further:
Embodiment 1
The preparation method of a kind of low-cost golden low radiation rate film of the present invention, comprises the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter stainless steel planar target, magnetron sputtering SSTO on glass substrate
xlayer; Described SSTO
xthe thickness of layer is 30nm, and the volume ratio of described argon gas and oxygen is 1:2, and the volume flow ratio of argon gas and oxygen is 500sccm:1000sccm, and the sputtering power that described direct supply spatters is 75KW, minute two cathode sputterings.
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, SSTO in steps A
xmagnetron sputtering C rN on layer
xlayer; Described CrN
xthe thickness of layer is 3nm, and the volume ratio of argon gas and nitrogen is 1:2, and the volume flow ratio of argon gas and nitrogen is 500sccm:1000sccm, the sputtering power 3KW of described direct supply sputter chromium planar target.
C, adopt argon gas as reactant gases, direct supply sputtering silver planar target, the CrN in step B
xmagnetron sputtering Ag layer on layer; The thickness of described Ag layer is 8nm, the sputtering power 4KW of described direct supply.
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering Si layer on Ag layer in step C; The thickness of described Si layer is 10nm, the sputtering power 3KW of described direct supply.
E, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Si layer in step D; The thickness of described AZO layer is 50nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, the sputtering power 50KW of described alternating-current; With three rotating cathode sputters.
F, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering C u layer on the AZO layer in step e; The thickness of described Cu layer is 8nm, and the sputtering power of described direct supply is 4KW.
G, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Cu layer in step F; The thickness of described AZO layer is 20nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, and the sputtering power of described AC power is 20KW.
H, employing oxygen are as reactant gases, and argon gas is as shielding gas, and AC power sputtered silicon aluminium alloy rotates target, magnetron sputtering SiO on the AZO layer in step G
2layer.Described SiO
2the thickness of layer is 20nm, and in described silumin rotary target, the mol ratio of Si and Al is 92:8, and AC power sputtering power is 50KW.
Embodiment 2
The preparation method of a kind of low-cost golden low radiation rate film of the present invention, comprises the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter stainless steel planar target, magnetron sputtering SSTO on glass substrate
xlayer; Described SSTO
xthe thickness of layer is 40nm, and the volume ratio of described argon gas and oxygen is 1:2, and the volume flow ratio of argon gas and oxygen is 500sccm:1000sccm, and the sputtering power that described direct supply spatters is 90KW, minute two cathode sputterings.
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, SSTO in steps A
xmagnetron sputtering C rN on layer
xlayer; Described CrN
xthe thickness of layer is 4nm, and the volume ratio of argon gas and nitrogen is 1:2, and the volume flow ratio of argon gas and nitrogen is 500sccm:1000sccm, the sputtering power 4KW of described direct supply sputter chromium planar target.
C, adopt argon gas as reactant gases, direct supply sputtering silver planar target, the CrN in step B
xmagnetron sputtering Ag layer on layer; The thickness of described Ag layer is 9nm, the sputtering power 4.5KW of described direct supply.
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering Si layer on Ag layer in step C; The thickness of described Si layer is 15nm, the sputtering power 4KW of described direct supply.
E, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Si layer in step D; The thickness of described AZO layer is 55nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, the sputtering power 55KW of described alternating-current; With three rotating cathode sputters.
F, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering C u layer on the AZO layer in step e; The thickness of described Cu layer is 9nm, and the sputtering power of described direct supply is 4.5KW.
G, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Cu layer in step F; The thickness of described AZO layer is 22nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, and the sputtering power of described AC power is 23KW.
H, employing oxygen are as reactant gases, and argon gas is as shielding gas, and AC power sputtered silicon aluminium alloy rotates target, magnetron sputtering SiO on the AZO layer in step G
2layer.Described SiO
2the thickness of layer is 25nm, and in described silumin rotary target, the mol ratio of Si and Al is 92:8, and AC power sputtering power is 60KW.
Embodiment 3
The preparation method of a kind of low-cost golden low radiation rate film of the present invention, comprises the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter stainless steel planar target, magnetron sputtering SSTO on glass substrate
xlayer; Described SSTO
xthe thickness of layer is 45nm, and the volume ratio of described argon gas and oxygen is 1:2, and the volume flow ratio of argon gas and oxygen is 500sccm:1000sccm, and the sputtering power that described direct supply spatters is 115KW, minute two cathode sputterings.
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, SSTO in steps A
xmagnetron sputtering C rN on layer
xlayer; Described CrN
xthe thickness of layer is 5nm, and the volume ratio of argon gas and nitrogen is 1:2, and the volume flow ratio of argon gas and nitrogen is 500sccm:1000sccm, the sputtering power 6KW of described direct supply sputter chromium planar target.
C, adopt argon gas as reactant gases, direct supply sputtering silver planar target, the CrN in step B
xmagnetron sputtering Ag layer on layer; The thickness of described Ag layer is 10nm, the sputtering power 5KW of described direct supply.
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering Si layer on Ag layer in step C; The thickness of described Si layer is 20nm, the sputtering power 6KW of described direct supply.
E, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Si layer in step D; The thickness of described AZO layer is 65nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, the sputtering power 65KW of described alternating-current; With three rotating cathode sputters.
F, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering C u layer on the AZO layer in step e; The thickness of described Cu layer is 10nm, and the sputtering power of described direct supply is 5KW.
G, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Cu layer in step F; The thickness of described AZO layer is 25nm, in Al-Doped ZnO pottery rotary target, mixes by mass percentage aluminium 2%, and the sputtering power of described AC power is 25KW.
H, employing oxygen are as reactant gases, and argon gas is as shielding gas, and AC power sputtered silicon aluminium alloy rotates target, magnetron sputtering SiO on the AZO layer in step G
2layer.Described SiO
2the thickness of layer is 30nm, and in described silumin rotary target, the mol ratio of Si and Al is 92:8, and AC power sputtering power is 75KW.
More than show and described ultimate principle of the present invention and principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; that in above-described embodiment and specification sheets, describes just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and these changes and improvements all fall in the claimed scope of the invention.The claimed scope of the present invention is defined by appending claims and equivalent thereof.
Claims (9)
1. a preparation method for low-cost golden low radiation rate film, is characterized in that comprising the following steps:
A, adopt oxygen as reactant gases, argon gas is as shielding gas, direct supply sputter stainless steel planar target, magnetron sputtering SSTO on glass substrate
xlayer;
B, adopt nitrogen as reactant gases, argon gas is as shielding gas, direct supply sputter chromium planar target, SSTO in steps A
xmagnetron sputtering C rN on layer
xlayer;
C, adopt argon gas as reactant gases, direct supply sputtering silver planar target, the CrN in step B
xmagnetron sputtering Ag layer on layer;
D, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering Si layer on Ag layer in step C;
E, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Si layer in step D;
F, adopt argon gas as reactant gases, direct supply sputter copper planar target, magnetron sputtering C u layer on the AZO layer in step e;
G, adopt argon gas as reactant gases, AC power sputter Al-Doped ZnO pottery rotary target, magnetron sputtering AZO layer on the Cu layer in step F;
H, employing oxygen are as reactant gases, and argon gas is as shielding gas, and AC power sputtered silicon aluminium alloy rotates target, magnetron sputtering SiO on the AZO layer in step G
2layer.
2. the preparation method of a kind of low-cost golden low radiation rate film according to claim 1, the thickness that it is characterized in that the layer of SSTOx described in steps A is 30～45nm, the volume ratio of described argon gas and oxygen is 1:2, the sputtering power that described direct supply spatters is 75～115KW, minute two cathode sputterings.
3. the preparation method of a kind of low-cost golden low radiation rate film according to claim 1, is characterized in that CrN described in step B
xthe thickness of layer is 3～5nm, and the volume ratio of argon gas and nitrogen is 1:2, the sputtering power 3～6KW of described direct supply sputter chromium planar target.
4. the preparation method of a kind of low-cost golden low radiation rate film according to claim 1, the thickness that it is characterized in that Ag layer described in step C is 8～10nm, the sputtering power 4～5KW of described direct supply.
5. the preparation method of a kind of low-cost golden low radiation rate film according to claim 1, is characterized in that the thickness of Si layer is 10～20nm described in step D, the sputtering power 3～6KW of described direct supply.
6. the preparation method of a kind of low-cost golden low radiation rate film according to claim 1, the thickness that it is characterized in that the layer of AZO described in step e is 50～65nm, in Al-Doped ZnO pottery rotary target, mix by mass percentage aluminium 2%, the sputtering power 50～65KW of described alternating-current; With three rotating cathode sputters.
7. the preparation method of a kind of low-cost golden low radiation rate film according to claim 1, the thickness that it is characterized in that the layer of Cu described in step F is 8～10nm, the sputtering power of described direct supply is 4～5KW.
8. the preparation method of a kind of low-cost golden low radiation rate film according to claim 1, the thickness that it is characterized in that AZO layer described in step G is 20～25nm, in Al-Doped ZnO pottery rotary target, mix by mass percentage aluminium 2%, the sputtering power of described AC power is 20～25KW.
9. the preparation method of a kind of low-cost golden low radiation rate film according to claim 1, is characterized in that SiO described in step H
2the thickness of layer is 20～30nm, and in described silumin rotary target, the mol ratio of Si and Al is 92:8, and AC power sputtering power is 50～75KW.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310567780.3A CN103641332A (en) | 2013-11-14 | 2013-11-14 | Low-cost gold low-radiant ratio film preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310567780.3A CN103641332A (en) | 2013-11-14 | 2013-11-14 | Low-cost gold low-radiant ratio film preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103641332A true CN103641332A (en) | 2014-03-19 |
Family
ID=50246669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310567780.3A Pending CN103641332A (en) | 2013-11-14 | 2013-11-14 | Low-cost gold low-radiant ratio film preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103641332A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104309219A (en) * | 2014-10-30 | 2015-01-28 | 中山市亨立达机械有限公司 | Golden double-silver LOW-E glass with special film system |
| CN104441815A (en) * | 2014-11-12 | 2015-03-25 | 揭阳市宏光镀膜玻璃有限公司 | Golden-class double-silver LOW-E glass with high light transmittance, and preparation method of glass |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1153749A (en) * | 1995-11-02 | 1997-07-09 | 加迪安工业公司 | Neutral, high performance, durable low-E glass coating system, insulating glass units made therefrom, and methods of making same |
| JPH11157879A (en) * | 1997-11-26 | 1999-06-15 | Central Glass Co Ltd | Glass sheet having improved functionality |
| EP0964833A1 (en) * | 1997-03-05 | 1999-12-22 | Cardinal Ig Company | Bendable mirrors and method of manufacture |
| US6014872A (en) * | 1995-11-02 | 2000-01-18 | Guardian Industries Corp. | Methods of making insulating glass units with neutral, high performance, durable low-E glass coating systems |
| CN201082885Y (en) * | 2007-08-13 | 2008-07-09 | 格兰特工程玻璃(中山)有限公司 | Special film series gold LOW-E glass |
| CN102126833A (en) * | 2011-03-10 | 2011-07-20 | 黄骅荣达玻璃有限公司 | Low-emissivity coated glass |
| CN102910839A (en) * | 2012-11-13 | 2013-02-06 | 林嘉佑 | Golden low-radiation coated glass and preparation method thereof |
-
2013
- 2013-11-14 CN CN201310567780.3A patent/CN103641332A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1153749A (en) * | 1995-11-02 | 1997-07-09 | 加迪安工业公司 | Neutral, high performance, durable low-E glass coating system, insulating glass units made therefrom, and methods of making same |
| US6014872A (en) * | 1995-11-02 | 2000-01-18 | Guardian Industries Corp. | Methods of making insulating glass units with neutral, high performance, durable low-E glass coating systems |
| EP0964833A1 (en) * | 1997-03-05 | 1999-12-22 | Cardinal Ig Company | Bendable mirrors and method of manufacture |
| JPH11157879A (en) * | 1997-11-26 | 1999-06-15 | Central Glass Co Ltd | Glass sheet having improved functionality |
| CN201082885Y (en) * | 2007-08-13 | 2008-07-09 | 格兰特工程玻璃(中山)有限公司 | Special film series gold LOW-E glass |
| CN102126833A (en) * | 2011-03-10 | 2011-07-20 | 黄骅荣达玻璃有限公司 | Low-emissivity coated glass |
| CN102910839A (en) * | 2012-11-13 | 2013-02-06 | 林嘉佑 | Golden low-radiation coated glass and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104309219A (en) * | 2014-10-30 | 2015-01-28 | 中山市亨立达机械有限公司 | Golden double-silver LOW-E glass with special film system |
| CN104309219B (en) * | 2014-10-30 | 2015-12-30 | 中山市亨立达机械有限公司 | A kind of two silver-colored LOW-E glass of gold of special film system |
| CN104441815A (en) * | 2014-11-12 | 2015-03-25 | 揭阳市宏光镀膜玻璃有限公司 | Golden-class double-silver LOW-E glass with high light transmittance, and preparation method of glass |
| CN104441815B (en) * | 2014-11-12 | 2016-04-13 | 揭阳市宏光镀膜玻璃有限公司 | A kind of two silver-colored LOW-E glass of golden class of high transmission rate and preparation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9051211B2 (en) | Effects of methods of manufacturing sputtering targets on characteristics of coatings | |
| JP6923671B2 (en) | Pain with heatable TCO coating | |
| JP5725481B2 (en) | Low emission glass containing dielectric layer and method for producing the same | |
| JP2005256175A (en) | Target and method of producing high refractive index film by the target | |
| US5942090A (en) | Methods of producing a laminate | |
| CN103614696B (en) | A kind of preparation method of etching resistant film | |
| CN104230182A (en) | Preparation method of high-transmittance tempered low-emissivity coated glass | |
| CN103613286A (en) | Preparation method of golden thin film | |
| CN103741102B (en) | A kind of making method of Crystal lamp suspension member glass | |
| CN103641333B (en) | A kind of preparation method of Super high-permeability high-performance low-radiation membrane | |
| CN103641332A (en) | Low-cost gold low-radiant ratio film preparation method | |
| JPH08111123A (en) | Transparent conductive film, producing method thereof and sputtering terget | |
| CN205874224U (en) | Low -emissivity coated glass is passed through to superelevation | |
| WO2010004937A1 (en) | Method for manufacture of touch panel, and film formation apparatus | |
| CN103613285B (en) | A kind of preparation method of low-cost anti-radiation film | |
| CN103771726A (en) | Production method of low-emissivity glass | |
| WO2012116518A1 (en) | Low emissivity thin film, low emissivity coated glass and producing method thereof | |
| Carretero et al. | Improved photoenergy properties of low-emissivity coatings deposited by sputtering with an ion gun treatment | |
| CN103395239A (en) | Low-radiation thin film with silicon-aluminum nitride medium layer and preparation technology thereof | |
| JP2006117501A (en) | Glass coating | |
| CN103643209A (en) | Method for preparing film with infrared shielding function | |
| JP2009242128A (en) | Transparent conductive glass substrate and method for manufacturing the same | |
| CN103643208B (en) | A kind of preparation method of high film | |
| CN103613287A (en) | Preparation method of low-radiation thin film capable of being tempered and processed in different places | |
| CN103755155A (en) | Manufacturing method of unidirectional visual low-radiation glass |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140319 |