CN103604999A - Method for measuring IGBT module structural impedance - Google Patents
Method for measuring IGBT module structural impedance Download PDFInfo
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- CN103604999A CN103604999A CN201310603333.9A CN201310603333A CN103604999A CN 103604999 A CN103604999 A CN 103604999A CN 201310603333 A CN201310603333 A CN 201310603333A CN 103604999 A CN103604999 A CN 103604999A
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Abstract
The invention discloses a method for measuring IGBT module structural impedance. A normal IGBT module saturation voltage drop value and a saturation voltage drop value of series connection between the normal IGBT module and a special IGBT module are respectively measured in a closed direct current circuit under the same current condition, and the IGBT module structural impedance is calculated through a specific value of the difference value to a current value, wherein the difference value is obtained by subtraction of the two saturation voltage drop values. The special IGBT module is a normal IGBT module with IGBT chip removal. The structural impedance of the IGBT module can be measured in a high-precision mode through the method, and the method is easy to operate and improves the measuring efficiency of new product parameters.
Description
Technical field
The present invention relates to semiconducter device testing technical field, relate in particular to the method for a kind of test I GBT modular structure impedance.
Background technology
Insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, be called for short in full IGBT) characteristic of property that there is high-frequency, high voltage, large electric current, especially easily turn on and off, it is the most representative product of the Power Electronic Technique revolution for the third time of generally acknowledging in the world, so far developed into for the 6th generation, commercialization developed into for the 5th generation.At present, IGBT has been widely used in all trades and professions of national economy.
IGBT module is mainly used in major loop inverter and all inverter circuits of frequency converter, i.e. in DC/AC conversion.The novel power transistor that the IGBT module of take is now representative is the core switching components and parts of high-frequency power electronic circuit and control system, now be widely used in the fields such as electric locomotive, high voltage power transmission and transforming, electric automobile, servo controller, UPS, Switching Power Supply, power of chopping, market outlook are very good.
The accurate test of IGBT module parameters is that each manufacturer must complete, for high-power IGBT module, IGBT module is owing to must adopting bonding line in module production run, the methods such as power electrode realize electrical connection, this connected mode can form a little impedance in loop of power circuit, this IGBT modular structure impedance meeting has influence on the simulation calculation in custom system design, power attenuation, series average-voltage, parallel current-sharing etc., so it is very important for user that IGBT modular structure impedance is accurately provided, Er Ge IGBT manufacturer is all using the method for testing of IGBT modular structure impedance as know-how.
Summary of the invention
In view of this, the object of the present invention is to provide the method for a kind of test I GBT modular structure impedance, adopt circuit to test the module of special construction, can test out accurately the size of IGBT modular structure impedance, for user provides reference.
For achieving the above object, the invention provides following technical scheme:
The method of test I GBT modular structure of the present invention impedance is tested in closed DC circuit, specifically comprises the steps:
(1) in closed DC circuit, access normal IGBT module U1, under electric current I condition, carry out the test of saturation voltage drop, obtain saturation pressure depreciation Vcesat1;
(2), under the constant condition of other circuit parameters, the special IGBT module U2 of series connection access, is connected by gold-plated busbar with normal IGBT module U1, carries out the test of saturation voltage drop under the current condition identical with step (1), obtains saturation pressure depreciation Vcesat2;
(3) calculate IGBT modular structure resistance value R, R=(Vcesat2-Vcesat1)/I;
Wherein, described special IGBT module U2 is the normal IGBT module of having removed igbt chip, directly bonding line is connected on the conductive layer on ceramic substrate, and other part-structures do not change; Described electric current I value is default with the ratio of the IGBT modular structure impedance R value of estimating according to showing magnitude of voltage 3～15V.
Preferably, synchronous saturation voltage drop is repeatedly tested in step (1) and step (2), step is averaged to R value in (3).
Preferably, described electric current I value is default with the ratio of the IGBT modular structure impedance R value of estimating according to showing magnitude of voltage 3～5V.
Further, described electric current I value is set as 3000A.
By the method for test I GBT modular structure of the present invention impedance, can high-precisionly test out the structural impedance of IGBT module, the method is simple to operation, has improved the efficiency of new product parameter testing.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing relevant of the present invention in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the electrical connection schematic diagram of step (1) in the method for test I GBT modular structure of the present invention impedance;
Fig. 2 is the electrical connection schematic diagram of step (2) in the method for test I GBT modular structure of the present invention impedance.
Embodiment
The method that the invention discloses the impedance of a kind of test I GBT modular structure, specifically comprises the steps:
(1) in closed DC circuit, access normal IGBT module U1, under electric current I condition, carry out the test of saturation voltage drop, obtain saturation pressure depreciation Vcesat1;
(2), under the constant condition of other circuit parameters, the special IGBT module U2 of series connection access, is connected by gold-plated busbar with normal IGBT module U1, carries out the test of saturation voltage drop under the current condition identical with step (1), obtains saturation pressure depreciation Vcesat2;
(3) calculate IGBT modular structure resistance value R, R=(Vcesat2-Vcesat1)/I;
Wherein, described special IGBT module U2 is the normal IGBT module of having removed igbt chip, directly bonding line is connected on the conductive layer on ceramic substrate, and other part-structures do not change; Described electric current I value is default with the ratio of the IGBT modular structure impedance R value of estimating according to showing magnitude of voltage 3～15V.
Preferably, synchronous saturation voltage drop is repeatedly tested in step (1) and step (2), step is averaged to R value in (3).
Preferably, described electric current I value is default with the ratio of the IGBT modular structure impedance R value of estimating according to showing magnitude of voltage 3～5V.
Further, described electric current I value is set as 3000A.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work, belongs to the scope of protection of the invention.
The structure of general IGBT module has comprised base plate, ceramic layer, layer, epoxy layer, silica gel, igbt chip, PCB, shell, power electrode, auxiliary electrode and bonding line etc., wherein bonding line, power electrode etc. have been realized the electrical connection of IGBT module, but this connected mode can form a little impedance in loop of power circuit, be the structural impedance of IGBT module.In order to test out the size of IGBT modular structure impedance, inventor designs and manufactures the IGBT module of a special construction, this special IGBT module is removed the igbt chip in general IGBT modular structure, directly bonding line is connected on the conductive layer on ceramic substrate, other part-structures do not change.
Complete after the IGBT module of above-mentioned special construction, according to the electrical structure schematic diagram shown in Fig. 1～Fig. 2, test, method of testing is as follows:
As shown in Figure 1, in closed DC circuit, only access normal IGBT module U1, do not access the IGBT module U2 of special construction, normal IGBT module U1 is carried out to the test of saturation voltage drop under the current condition of 3000A, obtain saturation voltage drop Vcesat1;
Current value is herein default with the ratio of the IGBT modular structure resistance value of estimating according to magnitude of voltage, the structural impedance of IGBT module is generally several milliohms, the magnitude of voltage showing is generally 3～15V, that more common is 3～5V, extrapolate accordingly default measuring current value in several kiloamperes, 3000A is an accepted value rule of thumb obtaining, and in concrete test process, will be selected to adjust according to the actual conditions of IGBT module.
As shown in Figure 2, under the constant condition of other circuit parameters, by in the test circuit shown in IGBT module U2 series connection access Fig. 1 of special construction, because the structural impedance of IGBT module is generally milliohm level, the internal resistance of test circuit may have influence on the degree of accuracy of measurement result, therefore internal resistance is as much as possible little, so that can ignore its impact on test result, the busbar that connects the IGBT module U2 of normal IGBT module U1 and special construction herein adopts gold-plated busbar B, reduced the impact of busbar on test result, and then normal IGBT module is carried out to the test of saturation voltage drop under the current condition of 3000A, obtain saturation voltage drop Vcesat2,
Selecting the current condition of 3000A herein, is in order to be consistent, and is convenient to the computing of follow-up formula to result, and it is also the same object for reducing to greatest extent the interference of test link that other circuit parameters remain unchanged.
By formula R=U/I=(Vcesat2-Vcesat1)/3000A, calculate IGBT modular structure resistance value R.
Consider artificial mistake and the error of test result, saturation voltage drop Vcesat1 and saturation voltage drop Vcesat2 are taken multiple measurements, and obvious suspicious numerical value in measurement result is rejected, again to the results averaged of repeatedly testing, to at utmost getting rid of artificial factor, guarantee the accuracy of result.
By above 3 steps, just can test out the higher IGBT modular structure impedance of accuracy.
In sum, by the method for test I GBT modular structure of the present invention impedance, can high-precisionly test out the structural impedance of IGBT module, the method is simple to operation, has improved the efficiency of new product parameter testing.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and in the situation that not deviating from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, is therefore intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in scope.
In addition, be to be understood that, although this instructions is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of instructions is only for clarity sake, those skilled in the art should make instructions as a whole, and the technical scheme in each embodiment also can, through appropriately combined, form other embodiments that it will be appreciated by those skilled in the art that.
Claims (4)
1. a method for test I GBT modular structure impedance, the method is tested in closed DC circuit, it is characterized in that, comprises the steps:
(1) in closed DC circuit, access normal IGBT module U1, under electric current I condition, carry out the test of saturation voltage drop, obtain saturation pressure depreciation Vcesat1;
(2), under the constant condition of other circuit parameters, the special IGBT module U2 of series connection access, is connected by gold-plated busbar with normal IGBT module U1, carries out the test of saturation voltage drop under the current condition identical with step (1), obtains saturation pressure depreciation Vcesat2;
(3) calculate IGBT modular structure resistance value R, R=(Vcesat2-Vcesat1)/I;
Wherein, described special IGBT module U2 is the normal IGBT module of having removed igbt chip, directly bonding line is connected on the conductive layer on ceramic substrate, and other part-structures do not change; Described electric current I value is default with the ratio of the IGBT modular structure impedance R value of estimating according to showing magnitude of voltage 3～15V.
2. method according to claim 1, is characterized in that: synchronous saturation voltage drop is repeatedly tested in step (1) and step (2), step is averaged to R value in (3).
3. method according to claim 1, is characterized in that: described electric current I value is default with the ratio of the IGBT modular structure impedance R value of estimating according to showing magnitude of voltage 3～5V.
4. method according to claim 3, is characterized in that: described electric current I value is set as 3000A.
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| CN201310603333.9A CN103604999B (en) | 2013-11-21 | 2013-11-21 | A kind of method testing the structural impedance of IGBT module |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115078954A (en) * | 2022-08-18 | 2022-09-20 | 北京芯可鉴科技有限公司 | Method and device for evaluating component in circuit and circuit |
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| JP2004274801A (en) * | 2003-03-05 | 2004-09-30 | Toshiba Corp | Inverter circuit |
| JP2009225570A (en) * | 2008-03-17 | 2009-10-01 | Fuji Electric Holdings Co Ltd | Power conversion device |
| JP5035700B2 (en) * | 2009-02-02 | 2012-09-26 | 三菱電機株式会社 | Reverse bias safe operating area measuring device |
| CN102707120A (en) * | 2012-05-21 | 2012-10-03 | 上海力信新能源技术有限公司 | Current sampling circuit and method for control system based on power semiconductor devices |
| JP2013017007A (en) * | 2011-07-04 | 2013-01-24 | Sanyo Electric Co Ltd | Semiconductor switch and switching device |
| CN203278204U (en) * | 2013-06-13 | 2013-11-06 | 浙江海得新能源有限公司 | IGBT module parallel-connection protection circuit applied to high-power inverter |
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- 2013-11-21 CN CN201310603333.9A patent/CN103604999B/en active Active
Patent Citations (6)
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| JP2004274801A (en) * | 2003-03-05 | 2004-09-30 | Toshiba Corp | Inverter circuit |
| JP2009225570A (en) * | 2008-03-17 | 2009-10-01 | Fuji Electric Holdings Co Ltd | Power conversion device |
| JP5035700B2 (en) * | 2009-02-02 | 2012-09-26 | 三菱電機株式会社 | Reverse bias safe operating area measuring device |
| JP2013017007A (en) * | 2011-07-04 | 2013-01-24 | Sanyo Electric Co Ltd | Semiconductor switch and switching device |
| CN102707120A (en) * | 2012-05-21 | 2012-10-03 | 上海力信新能源技术有限公司 | Current sampling circuit and method for control system based on power semiconductor devices |
| CN203278204U (en) * | 2013-06-13 | 2013-11-06 | 浙江海得新能源有限公司 | IGBT module parallel-connection protection circuit applied to high-power inverter |
Non-Patent Citations (1)
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| 冯玉生: "绝缘栅双极型晶体管IGBT", 《河南机专学报(自然科学版)》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115078954A (en) * | 2022-08-18 | 2022-09-20 | 北京芯可鉴科技有限公司 | Method and device for evaluating component in circuit and circuit |
| CN115078954B (en) * | 2022-08-18 | 2022-10-25 | 北京芯可鉴科技有限公司 | Method and device for evaluating component parts in circuit and circuit |
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| CN103604999B (en) | 2016-06-29 |
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Address after: 710016 No. 15 Wenjingbei Road, Xi'an Economic and Technological Development Zone, Shaanxi Province Patentee after: Xi'an Zhongche Yongji Electric Co. Ltd. Address before: 710016 No. 15 Wenjingbei Road, Xi'an Economic and Technological Development Zone, Shaanxi Province Patentee before: Xi'an Yongdian Electric Co., Ltd. |