CN102707120A - Current sampling circuit and method for control system based on power semiconductor devices - Google Patents
Current sampling circuit and method for control system based on power semiconductor devices Download PDFInfo
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- CN102707120A CN102707120A CN2012101627730A CN201210162773A CN102707120A CN 102707120 A CN102707120 A CN 102707120A CN 2012101627730 A CN2012101627730 A CN 2012101627730A CN 201210162773 A CN201210162773 A CN 201210162773A CN 102707120 A CN102707120 A CN 102707120A
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Abstract
The invention discloses a current sampling circuit for a control system based on power semiconductor devices, comprising one or a plurality of power semiconductor devices. Current sampling ends extend from the two ends of the collection electrode and the transmission electrode, or the two ends of the drain electrode and the source electrode, or the two ends of the anode and the cathode of each power semiconductor device. The current is sampled through the current loop of the power semiconductor device corresponding to the current sampling ends. The invention further provides a method for using the current sampling circuit of the control system based on the power semiconductor devices to sample the current. The current sampling circuit has the advantages of reducing the cost, the volume and the power of the current sampling circuit of the control system based on the power semiconductor devices.
Description
Technical field
The present invention relates to electronic technology, relate in particular to a kind of current sampling circuit and current sample method thereof of the control system based on power semiconductor device.
Background technology
Many control system based on power semiconductor device; As be used for the sun power inversion control, be used for wind energy control, be used for current transformer control, be used for Frequency Converter Control, be used for motor (as direct current generator, alternating current generator, servomotor, synchronous motor, etc.) control system based on power semiconductor device of control, to sample to the electric current in the control system usually.Power semiconductor device (power semiconductor device) is called power electronic devices again, comprises power transistor (GTR), gate level turn-off thyristor (GTO), power field effect pipe (Power MOSFET), igbt (IGBT), integrated gate commutated thyristor (IGCT), SGCT (SGCT) etc.
Based on the control system of power semiconductor device (MOS, IGBT, IPM, thyristor, pliotron etc.), common current sample technical scheme has two kinds in the market.
A kind of is to adopt current transformer sample rate current method; As shown in Figure 1, the control system that Fig. 1 is based on power semiconductor device is used to control three phase electric machine, and power semiconductor device uses insulated gate bipolar transistor IGBT; Through current transformer T1; T2, T3, T4 carries out current sample to the current return of insulated gate bipolar transistor IGBT.There is following shortcoming in this method:
A, current transformer volume are big, are unfavorable for installing and the small design product;
B, when multichannel is controlled, need a lot of current transformers, consumption is many, the waste resource;
The electric current narrow application range of c, current transformer for the different sample current amplitude of Adaption Control System, needs the current transformer of different parameters, and the current transformer that this needs plurality of specifications is unfavorable for producing in batches;
The price of d, current transformer is very high, and cost is high.
Another kind is to adopt external power resistor sample rate current method; As shown in Figure 2, the control system that Fig. 2 is based on power semiconductor device is used to control three phase electric machine, and power semiconductor device uses power field effect pipe; Through power resistor R1; R2, R3, R4 carries out current sample to the current return of power field effect pipe.There is following shortcoming in this method:
The power consumption of a, power resistor is big, is prone to heating, and temperature is high;
The poor stability of b, power resistor, easy damage, reliability is low;
C, power resistor are installed inconvenient, are prone to heating, need be installed in the position of being convenient to dispel the heat, as: on the heat radiator or on the installation shell;
D, inapplicable big current sample, as: electric current more than 100 amperes, then need very powerful power resistor, this resistance needs customization, is unfavorable for producing in batches;
The power resistor of e, increase can be raised cost.
Summary of the invention
The technical matters that the present invention will solve is that reduction is based on cost, volume, the power consumption of the current sampling circuit of the control system of power semiconductor device.
For solving the problems of the technologies described above; The invention provides a kind of current sampling circuit of the control system based on power semiconductor device; Comprise one or more power semiconductor devices, from the collector and the emitter two ends of power semiconductor device, perhaps drain electrode and source electrode two ends; Perhaps anode and negative electrode two ends projected current sampling end carry out current sample through the current sample end to the current return of corresponding power semiconductor device.
Said power semiconductor device can be power transistor, gate level turn-off thyristor, power field effect pipe, igbt, integrated gate commutated thyristor or SGCT.
Said power semiconductor device can be an igbt, from the collector and the emitter two ends of igbt, projected current sampling end.
Said power semiconductor device can be a power field effect pipe, from the drain electrode and the source electrode two ends of power field effect pipe, projected current sampling end.
Control system can comprise a N trench igbt, the 2nd N trench igbt, the 3rd N trench igbt, the 4th N trench igbt, the 5th N trench igbt, the 6th N trench igbt; The collector of the collector of the collector of the one N trench igbt, the 2nd N trench igbt and the 3rd N trench igbt is just connecing power supply; The emitter of the emitter of the emitter of the 4th N trench igbt, the 5th N trench igbt and the 6th N trench igbt connects power-; The collector of the emitter of the one N trench igbt, the 4th N trench igbt is with the A phase that connects three phase electric machine; The collector of the emitter of the 2nd N trench igbt, the 5th N trench igbt is with the B phase that connects three phase electric machine; The collector of the emitter of the 3rd N trench igbt, the 6th N trench igbt is with the C phase that connects three phase electric machine; The collector of each N trench igbt and emitter two ends are the projected current sampling end respectively, through collector and emitter two ends respectively the projected current sampling end current return of corresponding N trench igbt is carried out current sample.
Control system can comprise a N channel power FET, the 2nd N channel power FET, the 3rd N channel power FET, the 4th N channel power FET, the 5th N channel power FET, the 6th N channel power FET; The drain electrode of the drain electrode of the drain electrode of the one N channel power FET, the 2nd N channel power FET and the 3rd N channel power FET is just connecing power supply; The source electrode of the source electrode of the source electrode of the 4th N channel power FET, the 5th N channel power FET and the 6th N channel power FET connects power-; The drain electrode of the source electrode of the one N channel power FET, the 4th N channel power FET is with the A phase that connects three phase electric machine; The drain electrode of the source electrode of the 2nd N channel power FET, the 5th N channel power FET is with the B phase that connects three phase electric machine; The drain electrode of the source electrode of the 3rd N channel power FET, the 6th N channel power FET is with the C phase that connects three phase electric machine; The drain electrode of each N channel power FET and source electrode two ends are the projected current sampling end respectively, through drain electrode and source electrode two ends respectively the projected current sampling end current return of corresponding N channel power FET is carried out current sample.
For solving the problems of the technologies described above, the present invention has also offered the method that the current sampling circuit that utilizes described control system based on power semiconductor device carries out current sample,
In this control system during a power semiconductor device conducting; Collector and emitter two ends through this power semiconductor device; Perhaps drain electrode and the double-end current sample end of source electrode; The sample collector and the emitter two ends of this power semiconductor device, the perhaps voltage difference U at drain electrode and source electrode two ends;
Then, calculate the sample rate current I of the current return of this power semiconductor device, I=U/R, R are between the collector and emitter of this power semiconductor device, perhaps the conducting internal resistance between drain electrode and the source electrode.
The current sampling circuit and the current sample method thereof of the control system based on power semiconductor device of the present invention, neither Current Transformer sampling is also without the applied power resistance sampling; But utilize the intrinsic characteristic of power semiconductor device in the control system; Because during these power semiconductor device conductings, the conducting internal resistance is arranged, the present invention power semiconductor device conducting internal resistance as one the sampling body; Through gathering the voltage at power device conducting internal resistance two ends, obtain current sample.The current sampling circuit and the current sample method thereof of the control system based on power semiconductor device of the present invention are multiplexed with a current sample body to the existing power semiconductor device in the control system, need not increase extra devices such as current transformer and power resistor; Reduced cost; Reduced volume, low in energy consumption, reference current control is wide; Be convenient to produce in batches, performance is highly stable.
Description of drawings
In order to be illustrated more clearly in technical scheme of the present invention; Do simple the introduction in the face of the accompanying drawing that will use required for the present invention down; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the current transformer current sampling circuit based on the control system of igbt that is used to control three phase electric machine;
Fig. 2 is the power resistor current sampling circuit based on the control system of power field effect pipe that is used to control three phase electric machine;
Fig. 3 is the current sampling circuit of the embodiment two of the control system based on power semiconductor device of the present invention;
Fig. 4 is the current sampling circuit of the embodiment three of the control system based on power semiconductor device of the present invention.
Embodiment
To combine the accompanying drawing in the embodiment of the invention below, the technical scheme in the embodiment of the invention is carried out clear, intactly description, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Should be appreciated that preferred embodiment described herein only is used for explanation and explains the present invention, and be not used in qualification the present invention.And under the situation of not conflicting, embodiment and the characteristic among the embodiment among the present invention can make up each other.Based on the embodiment among the present invention, the every other embodiment that those of ordinary skills obtained belongs to the scope that the present invention protects.
Embodiment one
Current sampling circuit based on the control system of power semiconductor device; Comprise one or more power semiconductor devices; Power semiconductor device can be power transistor (GTR), gate level turn-off thyristor (GTO), power field effect pipe (Power MOSFET), igbt (IGBT), integrated gate commutated thyristor (IGCT), SGCT (SGCT) etc.; Collector (the C utmost point) and emitter (the E utmost point) two ends from power semiconductor device; Perhaps drain electrode (the D utmost point) and source electrode (the S utmost point) two ends; Perhaps anode (the A utmost point) and negative electrode (the K utmost point) two ends projected current sampling end carry out current sample through the current sample end to the current return of corresponding power semiconductor device;
The method of utilizing the current sampling circuit based on the control system of power semiconductor device of embodiment one to carry out current sample is; In this control system during a power semiconductor device conducting; Collector and emitter two ends through this power semiconductor device; Perhaps drain electrode and the double-end current sample end of source electrode, the collector of this power semiconductor device of sampling and emitter two ends, the perhaps voltage difference U at drain electrode and source electrode two ends;
Then, calculate the sample rate current I of the current return of this power semiconductor device, I=U/R, R are between the collector and emitter of this power semiconductor device, perhaps the conducting internal resistance between drain electrode and the source electrode.
Embodiment two
Current sampling circuit based on the control system of power semiconductor device; As shown in Figure 3; Comprise a N trench igbt V1, the 2nd N trench igbt V2, the 3rd N trench igbt V3, the 4th N trench igbt V4, the 5th N trench igbt V5, the 6th N trench igbt V6; The collector C3 of the collector C2 of the collector C1 of the one N trench igbt V1, the 2nd N trench igbt V2 and the 3rd N trench igbt V3 meets the positive VDD of power supply; The emitter E 4 of the 4th N trench igbt V4, the emitter E 5 of the 5th N trench igbt V5 and the emitter E 6 of the 6th N trench igbt V6 meet power-VSS; The emitter E 1 of the one N trench igbt V1, the 4th N trench igbt V4 collector C4 are with the A phase that meets three phase electric machine M; The emitter E 2 of the 2nd N trench igbt V2, the 5th N trench igbt V5 collector C5 are with the B phase that connects three phase electric machine; The emitter E 3 of the 3rd N trench igbt V3, the 6th N trench igbt V6 collector C6 are with the C phase that connects three phase electric machine; Six N trench igbt V1, V2, V3; V4; V5, the collector of V6 and emitter two ends are the projected current sampling end respectively, through collector and emitter two ends respectively the projected current sampling end current return of corresponding N trench igbt is carried out current sample.
The method of utilizing the current sampling circuit based on the control system of power semiconductor device of embodiment two to carry out current sample is, the conducting that circulates in order of 6 N trench igbts, control three phase electric machine M;
When a N trench igbt V1, the 6th N trench igbt V6 conducting, electric current is from collector C1, the collector C6 of emitter E 1 → three phase electric machine A phase winding → three phase electric machine C phase winding → the 6th N trench igbt V6, the emitter E 6 → power-VSS of positive source VDD → N trench igbt V1; Between the collector C1 of the one N trench igbt V1, the emitter E 1, or the collector C6 of the 6th N trench igbt V6, emitter E 6 between the electric current that passes through, be exactly the electric current of motor; Through the collector C1 of a N trench igbt V1, the current sample end that emitter E 1 is drawn, the collector of a N trench igbt V1 of sampling and the voltage difference U 1 at emitter two ends; Perhaps through the collector C6 of the 6th N trench igbt V6, the current sample end that emitter E 6 is drawn, the collector of the 6th N trench igbt V6 of sampling and the voltage difference U 6 at emitter two ends; Then; Calculate the sample rate current I1 of the current return of a N trench igbt V1; I1=U1/R1; R1 is the collector C1 of a N trench igbt V1 and the conducting internal resistance between the emitter E 1; Perhaps calculate the sample rate current I6 of the current return of the 6th N trench igbt V6; I6=U6/R6, R6 are the collector C6 of the 6th N trench igbt V6 and the conducting internal resistance between the emitter E 6, and the electric current of motor is the sample rate current I6 of current return of sample rate current I1 or the 6th N trench igbt V6 of the current return of a N trench igbt V1 when a N trench igbt V1, the 6th N trench igbt V6 conducting;
When the 2nd N trench igbt V2, the 4th N trench igbt V4 conducting, electric current is from collector C2, the collector C4 of emitter E 2 → three phase electric machine B phase winding → three phase electric machine A phase winding → the 4th N trench igbt V4, the emitter E 4 → power-VSS of positive source VDD → the 2nd N trench igbt V2; Between the collector C2 of the 2nd N trench igbt V2, the emitter E 2, or the collector C4 of the 4th N trench igbt V4, emitter E 4 between the electric current that passes through, be exactly the electric current of motor; Through the collector C2 of the 2nd N trench igbt V2, the current sample end that emitter E 2 is drawn, the collector of the 2nd N trench igbt V2 of sampling and the voltage difference U 2 at emitter two ends; Perhaps through the collector C4 of the 4th N trench igbt V4, the current sample end that emitter E 4 is drawn, the collector of the 4th N trench igbt V4 of sampling and the voltage difference U 4 at emitter two ends; Then; Calculate the sample rate current I2 of the current return of the 2nd N trench igbt V2; I2=U2/R2; R2 is the collector C2 of the 2nd N trench igbt V2 and the conducting internal resistance between the emitter E 2; Perhaps calculate the sample rate current I4 of the current return of the 4th N trench igbt V4; I4=U4/R4, R4 are the collector C4 of the 4th N trench igbt V4 and the conducting internal resistance between the emitter E 4, and the electric current of motor is the sample rate current I4 of current return of sample rate current I2 or the 4th N trench igbt V4 of the current return of the 2nd N trench igbt V2 when the 2nd N trench igbt V2, the 4th N trench igbt V4 conducting;
When the 3rd N trench igbt V3, the 5th N trench igbt V5 conducting, electric current is from collector C3, the collector C5 of emitter E 3 → three phase electric machine C phase winding → three phase electric machine A phase winding → the 5th N trench igbt V5, the emitter E 5 → power-VSS of positive source VDD → the 3rd N trench igbt V3; Between the collector C3 of the 3rd N trench igbt V3, the emitter E 3, or the collector C5 of the 5th N trench igbt V5, emitter E 5 between the electric current that passes through, be exactly the electric current of motor; Through the collector C3 of the 3rd N trench igbt V3, the current sample end that emitter E 3 is drawn, the collector of the 3rd N trench igbt V3 of sampling and the voltage difference U 3 at emitter two ends; Perhaps through the collector C5 of the 5th N trench igbt V5, the current sample end that emitter E 5 is drawn, the collector of the 5th N trench igbt V5 of sampling and the voltage difference U 5 at emitter two ends; Then; Calculate the sample rate current I3 of the current return of the 3rd N trench igbt V3; I3=U3/R3; R3 is the collector C3 of the 3rd N trench igbt V3 and the conducting internal resistance between the emitter E 3; Perhaps calculate the sample rate current I5 of the current return of the 5th N trench igbt V5; I5=U5/R5, R5 are the collector C5 of the 5th N trench igbt V5 and the conducting internal resistance between the emitter E 5, and the electric current of motor is the sample rate current I5 of current return of sample rate current I3 or the 5th N trench igbt V5 of the current return of the 3rd N trench igbt V3 when the 3rd N trench igbt V3, the 5th N trench igbt V5 conducting;
Other manage conduction mode, in like manner also can sample the electric current of motor.
Embodiment three
Current sampling circuit based on the control system of power semiconductor device; As shown in Figure 4; Comprise a N channel power FET V1, the 2nd N channel power FET V2, the 3rd N channel power FET V3, the 4th N channel power FET V4, the 5th N channel power FET V5, the 6th N channel power FET V6; The drain D 1 of the one N channel power FET V1, the drain D 2 of the 2nd N channel power FET V2 and the drain D 3 of the 3rd N channel power FET V3 meet the positive VDD of power supply; The source S 4 of the 4th N channel power FET V4, the source S 5 of the 5th N channel power FET V5 and the source S 6 of the 6th N channel power FET V6 meet power-VSS; The source S 1 of the one N channel power FET V1, the drain D of the 4th N channel power FET V4 4 are with the A phase that meets three phase electric machine M; The source S 2 of the 2nd N channel power FET V2, the drain D of the 5th N channel power FET V5 5 are with the B phase that connects three phase electric machine, and the source S 3 of the 3rd N channel power FET V3, the drain D of the 6th N channel power FET V6 6 are with the C phase that connects three phase electric machine, six N channel power FET V1; V2; V3, V4, V5; The drain electrode of V6 and source electrode two ends are the projected current sampling end respectively, through drain electrode and source electrode two ends respectively the projected current sampling end current return of corresponding N channel power FET is carried out current sample.
The method of utilizing the current sampling circuit based on the control system of power semiconductor device of embodiment three to carry out current sample is, the conducting that circulates in order of 6 N channel power FETs, control three phase electric machine M;
When a N channel power FET V1, the 6th N channel power FET V6 conducting, electric current is from drain D 1, the source S 1 → three phase electric machine A phase winding → three phase electric machine C phase winding → drain D 6 of the 6th N channel power FET V6, the source S 6 → power-VSS of positive source VDD → N channel power FET V1; Between the drain D 1 of the one N channel power FET V1, the source S 1, or the drain D 1 of the 6th N channel power FET V6, source S 1 between the electric current that passes through, be exactly the electric current of motor; Through the drain D 1 of a N channel power FET V1, the current sample end that source S 1 is drawn, the sample drain electrode of a N channel power FET V1 and the voltage difference U 1 at source electrode two ends; Perhaps through the drain D 6 of the 6th N channel power FET V6, the current sample end that source S 6 is drawn, the sample drain electrode of the 6th N channel power FET V6 and the voltage difference U 6 at source electrode two ends; Then; Calculate the sample rate current I1 of the current return of a N channel power FET V1; I1=U1/R1; R1 is the drain D 1 of a N channel power FET V1 and the conducting internal resistance between the source S 1; Perhaps calculate the sample rate current I6 of the current return of the 6th N channel power FET V6; I6=U6/R6, R6 are the drain D 6 of the 6th N channel power FET V6 and the conducting internal resistance between the source S 6, and the electric current of motor is the sample rate current I6 of current return of sample rate current I1 or the 6th N channel power FET V6 of the current return of a N channel power FET V1 when a N channel power FET V1, the 6th N channel power FET V6 conducting;
When the 2nd N channel power FET V2, the 4th N channel power FET V4 conducting, electric current is from drain D 2, the source S 2 → three phase electric machine B phase winding → three phase electric machine A phase winding → drain D 4 of the 4th N channel power FET V4, the source S 4 → power-VSS of positive source VDD → the 2nd N channel power FET V2; Between the drain D 2 of the 2nd N channel power FET V2, the source S 2, or the drain D 4 of the 4th N channel power FET V4, source S 4 between the electric current that passes through, be exactly the electric current of motor; Through the drain D 2 of the 2nd N channel power FET V2, the current sample end that source S 2 is drawn, the sample drain electrode of the 2nd N channel power FET V2 and the voltage difference U 2 at source electrode two ends; Perhaps through the drain D 4 of the 4th N channel power FET V4, the current sample end that source S 4 is drawn, the sample drain electrode of the 4th N channel power FET V4 and the voltage difference U 4 at source electrode two ends; Then; Calculate the sample rate current I2 of the current return of the 2nd N channel power FET V2; I2=U2/R2; R2 is the drain D 2 of the 2nd N channel power FET V2 and the conducting internal resistance between the source S 2; Perhaps calculate the sample rate current I4 of the current return of the 4th N channel power FET V4; I4=U4/R4, R4 are the drain D 4 of the 4th N channel power FET V4 and the conducting internal resistance between the source S 4, and the electric current of motor is the sample rate current I4 of current return of sample rate current I2 or the 4th N channel power FET V4 of the current return of the 2nd N channel power FET V2 when the 2nd N channel power FET V2, the 4th N channel power FET V4 conducting;
When the 3rd N channel power FET V3, the 5th N channel power FET V5 conducting, electric current is from drain D 3, the source S 3 → three phase electric machine C phase winding → three phase electric machine B phase winding → drain D 5 of the 5th N channel power FET V5, the source S 5 → power-VSS of positive source VDD → the 3rd N channel power FET V3; Between the drain D 3 of the 3rd N channel power FET V3, the source S 3, or the drain D 5 of the 5th N channel power FET V5, source S 5 between the electric current that passes through, be exactly the electric current of motor; Through the drain D 3 of the 3rd N channel power FET V3, the current sample end that source S 3 is drawn, the sample drain electrode of the 3rd N channel power FET V3 and the voltage difference U 3 at source electrode two ends; Perhaps through the drain D 5 of the 5th N channel power FET V5, the current sample end that source S 5 is drawn, the sample drain electrode of the 5th N channel power FET V5 and the voltage difference U 5 at source electrode two ends; Then; Calculate the sample rate current I3 of the current return of the 3rd N channel power FET V3; I3=U3/R3; R3 is the drain D 3 of the 3rd N channel power FET V3 and the conducting internal resistance between the source S 3; Perhaps calculate the sample rate current I5 of the current return of the 5th N channel power FET V5; I5=U5/R5, R5 are the drain D 5 of the 5th N channel power FET V5 and the conducting internal resistance between the source S 5, and the electric current of motor is the sample rate current I5 of current return of sample rate current I3 or the 5th N channel power FET V5 of the current return of the 3rd N channel power FET V3 when the 3rd N channel power FET V3, the 5th N channel power FET V5 conducting;
Other manage conduction mode, in like manner also can sample the electric current of motor.
The current sampling circuit and the current sample method thereof of the control system based on power semiconductor device of the present invention, neither Current Transformer sampling is also without the applied power resistance sampling; But utilize the intrinsic characteristic of power semiconductor device in the control system; Because during these power semiconductor device conductings, the conducting internal resistance is arranged, the present invention power semiconductor device conducting internal resistance as one the sampling body; Through gathering the voltage at power device conducting internal resistance two ends, obtain current sample.The current sampling circuit and the current sample method thereof of the control system based on power semiconductor device of the present invention are multiplexed with a current sample body to the existing power semiconductor device in the control system, need not increase extra devices such as current transformer and power resistor; Reduced cost; Reduced volume, low in energy consumption, reference current control is wide; Be convenient to produce in batches, performance is highly stable.
The current sampling circuit and the current sample method thereof of the control system based on power semiconductor device of the present invention; Not only practical three phase electric machine control; Also be suitable for single-phase and polyphase machine Current Control simultaneously, can also be used for the Current Control of sun power inversion, wind energy, current transformer, frequency converter etc.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being made, is equal to replacement, improvement etc., all should be included within the scope that the present invention protects.
Claims (9)
1. the current sampling circuit based on the control system of power semiconductor device comprises one or more power semiconductor devices, it is characterized in that,
From the collector and the emitter two ends of power semiconductor device, perhaps drain electrode and source electrode two ends, perhaps anode and negative electrode two ends projected current sampling end carry out current sample through the current sample end to the current return of corresponding power semiconductor device.
2. the current sampling circuit of the control system based on power semiconductor device according to claim 1; It is characterized in that said power semiconductor device is power transistor, gate level turn-off thyristor, power field effect pipe, igbt, integrated gate commutated thyristor or SGCT.
3. the current sampling circuit of the control system based on power semiconductor device according to claim 1; It is characterized in that; Said power semiconductor device is an igbt, from the collector and the emitter two ends of igbt, projected current sampling end.
4. the current sampling circuit of the control system based on power semiconductor device according to claim 1 is characterized in that said power semiconductor device is a power field effect pipe, from the drain electrode and the source electrode two ends of power field effect pipe, projected current sampling end.
5. according to the current sampling circuit of claim 1 or 3 described control system based on power semiconductor device, it is characterized in that,
Control system comprises a N trench igbt, the 2nd N trench igbt, the 3rd N trench igbt, the 4th N trench igbt, the 5th N trench igbt, the 6th N trench igbt; The collector of the collector of the collector of the one N trench igbt, the 2nd N trench igbt and the 3rd N trench igbt is just connecing power supply; The emitter of the emitter of the emitter of the 4th N trench igbt, the 5th N trench igbt and the 6th N trench igbt connects power-; The collector of the emitter of the one N trench igbt, the 4th N trench igbt is with the A phase that connects three phase electric machine; The collector of the emitter of the 2nd N trench igbt, the 5th N trench igbt is with the B phase that connects three phase electric machine; The collector of the emitter of the 3rd N trench igbt, the 6th N trench igbt is with the C phase that connects three phase electric machine; The collector of each N trench igbt and emitter two ends are the projected current sampling end respectively, through collector and emitter two ends respectively the projected current sampling end current return of corresponding N trench igbt is carried out current sample.
6. according to the current sampling circuit of claim 1 or 4 described control system based on power semiconductor device, it is characterized in that,
Control system comprises a N channel power FET, the 2nd N channel power FET, the 3rd N channel power FET, the 4th N channel power FET, the 5th N channel power FET, the 6th N channel power FET; The drain electrode of the drain electrode of the drain electrode of the one N channel power FET, the 2nd N channel power FET and the 3rd N channel power FET is just connecing power supply; The source electrode of the source electrode of the source electrode of the 4th N channel power FET, the 5th N channel power FET and the 6th N channel power FET connects power-; The drain electrode of the source electrode of the one N channel power FET, the 4th N channel power FET is with the A phase that connects three phase electric machine; The drain electrode of the source electrode of the 2nd N channel power FET, the 5th N channel power FET is with the B phase that connects three phase electric machine; The drain electrode of the source electrode of the 3rd N channel power FET, the 6th N channel power FET is with the C phase that connects three phase electric machine; The drain electrode of each N channel power FET and source electrode two ends are the projected current sampling end respectively, through drain electrode and source electrode two ends respectively the projected current sampling end current return of corresponding N channel power FET is carried out current sample.
7. utilize the current sampling circuit of each described control system based on power semiconductor device of claim 1 to 4 to carry out the method for current sample, it is characterized in that,
In this control system during a power semiconductor device conducting; Collector and emitter two ends through this power semiconductor device; Perhaps drain electrode and the double-end current sample end of source electrode; The sample collector and the emitter two ends of this power semiconductor device, the perhaps voltage difference U at drain electrode and source electrode two ends;
Then, calculate the sample rate current I of the current return of this power semiconductor device, I=U/R, R are between the collector and emitter of this power semiconductor device, perhaps the conducting internal resistance between drain electrode and the source electrode.
8. utilize the current sampling circuit of the described control system based on power semiconductor device of claim 5 to carry out the method for current sample, it is characterized in that, the conducting that circulates in order of 6 N trench igbts, control three phase electric machine;
When a N trench igbt, the 6th N trench igbt conducting; Through the collector of the first or the 6th N trench igbt, the current sample end that emitter is drawn, the collector of sampling the first or the 6th N trench igbt and the voltage difference at emitter two ends; Then, divided by the collector of corresponding N trench igbt and the conducting internal resistance between the emitter, obtain the sample rate current of the current return of the first or the 6th N trench igbt, with this voltage difference as the electric current of motor this moment;
When the 2nd N trench igbt, the 4th N trench igbt conducting; Through the collector of the second or the 4th N trench igbt, the current sample end that emitter is drawn, the collector of sampling the second or the 4th N trench igbt and the voltage difference at emitter two ends; Then, divided by the collector of corresponding N trench igbt and the conducting internal resistance between the emitter, obtain the sample rate current of the current return of the second or the 4th N trench igbt, with this voltage difference as the electric current of motor this moment;
When the 3rd N trench igbt, the 5th N trench igbt conducting; Through the collector of the 3rd or the 5th N trench igbt, the current sample end that emitter is drawn, the collector of the 3rd or the 5th N trench igbt of sampling and the voltage difference at emitter two ends; Then, divided by the collector of corresponding N trench igbt and the conducting internal resistance between the emitter, obtain the sample rate current of the current return of the 3rd or the 5th N trench igbt, with this voltage difference as the electric current of motor this moment.
9. utilize the current sampling circuit of the described control system based on power semiconductor device of claim 6 to carry out the method for current sample, it is characterized in that, the conducting that circulates in order of 6 N channel power FETs, control three phase electric machine;
When a N channel power FET, the 6th N channel power FET conducting; Through the drain electrode of the first or the 6th N channel power FET, the current sample end that source electrode is drawn, the drain electrode of sampling the first or the 6th N channel power FET and the voltage difference at source electrode two ends; Then, divided by the drain electrode of corresponding N channel power FET and the conducting internal resistance between the source electrode, obtain the sample rate current of the current return of the first or the 6th N channel power FET, with this voltage difference as the electric current of motor this moment;
When the 2nd N channel power FET, the 4th N channel power FET conducting; Through the drain electrode of the second or the 4th N channel power FET, the current sample end that source electrode is drawn, the drain electrode of sampling the second or the 4th N channel power FET and the voltage difference at source electrode two ends; Then, divided by the drain electrode of corresponding N channel power FET and the conducting internal resistance between the source electrode, obtain the sample rate current of the current return of the second or the 4th N channel power FET, with this voltage difference as the electric current of motor this moment;
When the 3rd N channel power FET, the 5th N channel power FET conducting; Through the drain electrode of the 3rd or the 5th N channel power FET, the current sample end that source electrode is drawn, the sample drain electrode of the 3rd or the 5th N channel power FET and the voltage difference at source electrode two ends; Then, divided by the drain electrode of corresponding N channel power FET and the conducting internal resistance between the source electrode, obtain the sample rate current of the current return of the 3rd or the 5th N channel power FET, with this voltage difference as the electric current of motor this moment.
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