CN204517697U - The two-way contravariant converter of three-phase - Google Patents
The two-way contravariant converter of three-phase Download PDFInfo
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- CN204517697U CN204517697U CN201520184958.0U CN201520184958U CN204517697U CN 204517697 U CN204517697 U CN 204517697U CN 201520184958 U CN201520184958 U CN 201520184958U CN 204517697 U CN204517697 U CN 204517697U
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Abstract
The utility model discloses the two-way contravariant converter of a kind of three-phase, it comprises: the first to the 6th silicon carbide MOSFET, has first node between the source electrode of the first silicon carbide MOSFET and the drain electrode of the second silicon carbide MOSFET; Between the source electrode of the 3rd silicon carbide MOSFET and the drain electrode of the 4th silicon carbide MOSFET, there is Section Point; Between the source electrode of the 5th silicon carbide MOSFET and the drain electrode of the 6th silicon carbide MOSFET, there is the 3rd node; First filter circuit; Drive and Control Circuit exports six groups of drive control signal to the first to the 6th silicon carbide MOSFET respectively to control the turn-on and turn-off of the first to the 6th silicon carbide MOSFET, to make three-phase two-way contravariant converter that the direct current that DC power supply exports is converted to alternating current, or the alternating current that AC power exports is converted to direct current.This converter can realize high switching frequency operation, thus reduces volume and the size of energy-storage system, reduces research and development, produces and cost of transportation.
Description
Technical field
The utility model relates to electric and electronic technical field, and particularly one is based on the two-way contravariant converter of three-phase of broad stopband SiC (carborundum) device for power switching.
Background technology
Along with the application of new forms of energy, the application of energy-storage battery becomes more and more extensive.Concerning energy-storage system, external communication electrical network needs in time to be charged to energy-storage battery by converter on the one hand, and on the other hand, when needs, energy-storage system also can discharge AC energy to outside AC network or other loads by converter.Here converter is two-way contravariant converter, specifically can be as shown in Figure 1.
Two-way contravariant converter can become AC power from DC converting, also can be charged to DC energy storage system by AC power simultaneously.A kind of typical apply of two-way contravariant converter is exactly charging system for electric automobile, it can realize vehicle (Vehicle) to vehicle (Vehicle), and vehicle (Vehicle) is to the interaction transmission of the electrical energy between electrical network (Electric Power).This two-way contravariant converter greatly can utilize electric energy efficiency, realizes electric automobile and becomes interconnecting of face with electrical network at the energy.Another application of two-way contravariant converter is energy storage type photovoltaic inverting system, and when low power consumption electricity price is low at night, electrical network can be charged to energy-storage system by two-way contravariant converter; By day during peak of power consumption, photovoltaic is to mains supply, and under electricity shortage condition, energy-storage system can by two-way contravariant converter balance electrical network, peak load shifting, effectively the maximum using energy.
In current inverter circuit, adopt silicon (Si) based insulation grid bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) three-level inverter topology is a kind of modal circuit, the such as clamped type of mid point (Neutral Point Clamp as shown in Figure 2, NPC) tri-level circuit, or T font tri-level circuit as shown in Figure 3.Mainly there is following shortcoming in these three-level inverters:
(1) circuit topological structure is complicated, and owing to adopting three level technology, circuit design (comprising control and drive part) is comparatively complicated, and particularly for two-way contravariant converter, three-level control principle strategy will be more complicated;
(2) adopt silica-based IGBT, switching frequency is subject to the restriction of loss, and general frequency is within 20 KHz, and output inductor is due to the restriction of low frequency, and size is comparatively large, limits the further lifting of power density;
(3) because silica-based IGBT loss is comparatively large, particularly switching loss is comparatively large, and efficiency is restricted, and typical 20 kilowatts of inverter peak efficiencies are confined to less than 98.6% at present.
Utility model content
For solving above-mentioned technical problem, present inventor draws through continuous test and study:
Carborundum (SiC) is the Typical Representative of third generation semi-conducting material, it has the outstanding advantages such as broad-band gap, high saturation drift velocity, high heat conductance, high critical breakdown electric field, be particularly suitable for making high-power power device, and the power semiconductor utilizing carborundum (SiC) material to realize just is leading applied power electronics field to realize one " green novel energy source revolution " at present.Further, SiC Schottky barrier diode (SBD, Schottky Barrier Diode) has developed nearly 15 years, has been widely used in efficient electrical power electronic system design.
At present based on carborundum (SiC) MOS (metal-oxide-semiconductor) memory (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET) development rapidly, is just progressively applied to the high-power conversion application of new forms of energy.Especially 1200 volts of carborundum (SiC) MOSFET have the feature such as pole low switch and conduction loss, high reliability, high withstand voltage, high avalanche breakdown ability compared with traditional silica-based IGBT, for the miniaturization of converters system, simplicity, lightness, high efficiency bring possibility.
For this reason, the purpose of this utility model is to propose a kind of two-way contravariant converter of three-phase based on broad stopband SiC (carborundum) device for power switching, high switching frequency operation can be realized, thus volume and the size of energy-storage system can be reduced, improve power density, reduce research and development, produce and cost of transportation.
For achieving the above object, the two-way contravariant converter of a kind of three-phase that the utility model proposes, comprise: the first silicon carbide MOSFET and the second silicon carbide MOSFET, the described drain electrode of the first silicon carbide MOSFET is connected with the positive terminal of DC power supply, the source electrode of described first silicon carbide MOSFET is connected with the drain electrode of described second silicon carbide MOSFET, the source electrode of described second silicon carbide MOSFET is connected with the negative pole end of described DC power supply, has first node between the source electrode of described first silicon carbide MOSFET and the drain electrode of described second silicon carbide MOSFET; 3rd silicon carbide MOSFET and the 4th silicon carbide MOSFET, the drain electrode of described 3rd silicon carbide MOSFET is connected with the positive terminal of described DC power supply, the source electrode of described 3rd silicon carbide MOSFET is connected with the drain electrode of described 4th silicon carbide MOSFET, the source electrode of described 4th silicon carbide MOSFET is connected with the negative pole end of described DC power supply, has Section Point between the source electrode of described 3rd silicon carbide MOSFET and the drain electrode of described 4th silicon carbide MOSFET; 5th silicon carbide MOSFET and the 6th silicon carbide MOSFET, the drain electrode of described 5th silicon carbide MOSFET is connected with the positive terminal of described DC power supply, the source electrode of described 5th silicon carbide MOSFET is connected with the drain electrode of described 6th silicon carbide MOSFET, the source electrode of described 6th silicon carbide MOSFET is connected with the negative pole end of described DC power supply, has the 3rd node between the source electrode of described 5th silicon carbide MOSFET and the drain electrode of described 6th silicon carbide MOSFET; First filter circuit, one end of described first filter circuit is connected with described 3rd node with described first node, described Section Point respectively, and the other end of described first filter circuit is connected with AC power; Drive and Control Circuit, described Drive and Control Circuit exports six groups of drive control signal to the first to the 6th silicon carbide MOSFET respectively to control the turn-on and turn-off of the described first to the 6th silicon carbide MOSFET, to make described three-phase two-way contravariant converter that the direct current that described DC power supply exports is converted to alternating current, or the alternating current that described AC power exports is converted to direct current.
According to the two-way contravariant converter of three-phase of the present utility model, device for power switching adopts silicon carbide MOSFET, can improve the switch operating frequency of device for power switching, optimize the design of the first filter circuit, realizes the work of more high efficiency and more high power density.And owing to being two Level Technology, circuit design is simple and reliable, volume and the size of energy-storage system can also be reduced, reduce research and development, produce and cost of transportation.
Wherein, the switch operating frequency of the described first to the 6th silicon carbide MOSFET is greater than 40 KHz.
Particularly, described first filter circuit comprises the first filter inductance, the second filter inductance and the 3rd filter inductance, one end of described first filter inductance is connected with described first node, the other end of described first filter inductance is connected with the A phase of described AC power, one end of described second filter inductance is connected with described Section Point, the other end of described second filter inductance is connected with the B phase of described AC power, one end of described 3rd filter inductance is connected with described 3rd node, and the described other end of the 3rd filter inductance is connected with the C phase of described AC power.
Wherein, described first filter inductance, the second filter inductance and the 3rd filter inductance all adopt flat copper wire to be wound on design in annular core.
Particularly, under the two-way contravariant converter of described three-phase is fully loaded with the condition of work, the junction temperature of the described first to the 6th silicon carbide MOSFET is less than 80 degrees Celsius.
The aspect that the utility model is additional and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present utility model.
Accompanying drawing explanation
The utility model above-mentioned and/or additional aspect and advantage will become obvious and easy understand from the following description of the accompanying drawings of embodiments, wherein:
Fig. 1 is the block diagram of two-way contravariant converter;
Fig. 2 is the structural representation of the clamped type tri-level circuit of mid point;
Fig. 3 is the structural representation of T font tri-level circuit;
Fig. 4 is the circuit topology schematic diagram based on the two-way contravariant converter of silicon carbide MOSFET two level according to the utility model embodiment;
Fig. 5 is the structural representation with the electric energy conversion system based on the two-way contravariant converter of silicon carbide MOSFET two level according to the utility model embodiment;
Fig. 6 is according to the efficiency of the two-way contravariant converter of 20 kilowtt three-phase based on silicon carbide MOSFET of the utility model embodiment change curve with power output; And
Fig. 7 is the Drive Structure schematic diagram based on silicon carbide MOSFET in the two-way contravariant converter of 20 kilowtt three-phase of silicon carbide MOSFET according to the utility model embodiment.
Embodiment
Be described below in detail embodiment of the present utility model, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the utility model, and can not being interpreted as restriction of the present utility model.
Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present utility model.Of the present utility model open in order to simplify, hereinafter the parts of specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the utility model.In addition, the utility model can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique that the utility model provides and the example of material, but those of ordinary skill in the art can recognize the property of can be applicable to of other techniques and/or the use of other materials.In addition, fisrt feature described below second feature it " on " structure can comprise the embodiment that the first and second features are formed as directly contact, also can comprise other feature and be formed in embodiment between the first and second features, such first and second features may not be direct contacts.
In description of the present utility model, it should be noted that, unless otherwise prescribed and limit, term " installation ", " being connected ", " connection " should be interpreted broadly, such as, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be directly be connected, also indirectly can be connected by intermediary, for the ordinary skill in the art, the concrete meaning of above-mentioned term can be understood as the case may be.
The two-way contravariant converter of the three-phase based on broad stopband SiC (carborundum) device for power switching proposed according to the utility model embodiment is described with reference to the accompanying drawings.
Fig. 4 is the circuit topology schematic diagram based on the two-way contravariant converter of silicon carbide MOSFET two level according to the utility model embodiment, and Fig. 5 is the structural representation with the electric energy conversion system based on the two-way contravariant converter of silicon carbide MOSFET two level according to the utility model embodiment.
As shown in Figure 4 and Figure 5, the two-way contravariant converter of three-phase that the utility model embodiment proposes comprises: the first silicon carbide MOSFET (i.e. Q1) and the second silicon carbide MOSFET (i.e. Q2), the 3rd silicon carbide MOSFET (i.e. Q3) and the 4th silicon carbide MOSFET (i.e. Q4), the 5th silicon carbide MOSFET (i.e. Q5) and the 6th silicon carbide MOSFET (i.e. Q6), the first filter circuit 10 and Drive and Control Circuit 20.Wherein, the drain electrode of the first silicon carbide MOSFET is connected with the positive terminal of DC power supply DC, the source electrode of the first silicon carbide MOSFET is connected with the drain electrode of the second silicon carbide MOSFET, the source electrode of the second silicon carbide MOSFET is connected with the negative pole end of DC power supply DC, has first node J1 between the source electrode of the first silicon carbide MOSFET and the drain electrode of the second silicon carbide MOSFET; The drain electrode of the 3rd silicon carbide MOSFET is connected with the positive terminal of DC power supply DC, the source electrode of the 3rd silicon carbide MOSFET is connected with the drain electrode of the 4th silicon carbide MOSFET, the source electrode of the 4th silicon carbide MOSFET is connected with the negative pole end of DC power supply DC, has Section Point J2 between the source electrode of the 3rd silicon carbide MOSFET and the drain electrode of the 4th silicon carbide MOSFET; The drain electrode of the 5th silicon carbide MOSFET is connected with the positive terminal of DC power supply DC, the source electrode of the 5th silicon carbide MOSFET is connected with the drain electrode of the 6th silicon carbide MOSFET, the source electrode of the 6th silicon carbide MOSFET is connected with the negative pole end of DC power supply DC, has the 3rd node J3 between the source electrode of the 5th silicon carbide MOSFET and the drain electrode of the 6th silicon carbide MOSFET; One end of first filter circuit 10 is connected with the 3rd node J3 with first node J1, Section Point J2 respectively, and the other end of the first filter circuit 10 is connected with AC power AC; Drive and Control Circuit 20 exports six groups of drive control signal to the first to the 6th silicon carbide MOSFET respectively to control the turn-on and turn-off of the first to the 6th silicon carbide MOSFET, to make three-phase two-way contravariant converter, the direct current that DC power supply exports is converted to alternating current, or the alternating current that AC power exports is converted to direct current, namely say, the two-way contravariant converter of three-phase can be operated in bidirectional, dc deliver stream or exchange turn in the conversion of direct current.
Wherein, the first silicon carbide MOSFET and the second silicon carbide MOSFET can adopt silicon carbide power module, also can adopt two separating silicon carbide MOSFET element.Similarly, between the 3rd silicon carbide MOSFET and the 4th silicon carbide MOSFET, adopt silicon carbide power module, also can adopt two separating silicon carbide MOSFET element.5th silicon carbide MOSFET and the 6th silicon carbide MOSFET can adopt silicon carbide power module, also can adopt two separating silicon carbide MOSFET element.
In embodiment of the present utility model, first to the 6th silicon carbide MOSFET (i.e. Q1-Q6) can adopt the silicon carbide MOSFET of 1200 volts, the two-way contravariant converter of three-phase operationally can adopt the control strategy of space vector pulse width modulation, utilizes system pattern to detect the switching and the control that realize bi-directional energy conversion.Wherein, system construction drawing as shown in Figure 5, mainly comprises main power inverter part, various sampling drive part, digital control part and accessory power supply part.Direct current system can connect the high-voltage energy storage system of 600 volts to 800 volts, AC power can directly and electric power network grid-connected.
According to an embodiment of the present utility model, the switch operating frequency of the first to the 6th silicon carbide MOSFET can be greater than 40 KHz, realize high frequency work, like this compared with silica-based IGBT scheme, switching frequency is more than doubled than traditional 20 maximum KHz, thus volume and the size of filter inductance L1, L2, the L3 in the first filter circuit 10 can be reduced, such as can reduce more than 30%, and improve the power density of converter.Wherein, based on the two-way contravariant converter of 20 kilowtt three-phase of silicon carbide MOSFET efficiency with power change curve as shown in Figure 6, as can be drawn from Figure 6, the highest overall efficiency based on the two-way contravariant converter of 20 kilowtt three-phase of silicon carbide MOSFET can reach 98.8%, wherein overall efficiency comprises the loss of fan and accessory power supply, and example complete machine weight is only 8.5 kilograms.
As shown in Figure 4, first filter circuit 10 comprises the first filter inductance L1, the second filter inductance L2 and the 3rd filter inductance L3, one end of first filter inductance L1 is connected with first node J1, the other end of the first filter inductance L1 is connected with the A phase of AC power, one end of second filter inductance L2 is connected with Section Point J1, the other end of the second filter inductance L2 is connected with the B phase of AC power, one end of 3rd filter inductance L3 is connected with the 3rd node J3, and the other end of the 3rd filter inductance L3 is connected with the C phase of AC power.
Wherein, first filter inductance L1, the second filter inductance L2 and the 3rd filter inductance L3 all can adopt flat copper wire to be wound on design in annular core, thus can reduce the magnetic part loss after high frequency, improve the area of dissipation of inductance simultaneously, optimize inductance heat radiation, lower working temperature.
Particularly, temperature based on the silicon carbide MOSFET in the 20 kilowtt three-phase two-way contravariant converter example of full silicon carbide MOSFET is respectively 76.1 degrees Celsius, 66.4 degrees Celsius, 72.5 degrees Celsius under full load conditions, wherein 66.4 degrees Celsius is the temperature going up brachium pontis silicon carbide MOSFET in the two-way contravariant converter of three-phase, and 72.5 degrees Celsius is the temperature descending brachium pontis silicon carbide MOSFET in the two-way contravariant converter of three-phase.It can thus be appreciated that, under the two-way contravariant converter of three-phase is fully loaded with the condition of work, the junction temperature of the first to the 6th silicon carbide MOSFET all can be less than 80 degrees Celsius, and the temperature of the first filter inductance L1, the second filter inductance L2 and the 3rd filter inductance L3 all can be less than 60 degrees Celsius.
Therefore, the two-way contravariant power inverter of three-phase based on broad stopband carborundum (SiC) semiconductor device of the utility model embodiment, due to the employing of carborundum (SiC) device for power switching, the switch operating frequency of device can be improved, optimal design alternating current filter is the first filter circuit such as, realizes the work of more high efficiency and more high power density.When the two-way contravariant converter of this three-phase is used for energy storage type new energy resources system, volume and the size of system can be reduced, reduce research and development, produce and cost of transportation.Such as, the two-way contravariant converter of 20 kilowtt realizes the complete machine peak efficiency of 98.8% under the switching frequency of 40 KHz, and device temperature controls under rational working temperature, thus improves the reliability of converter.
Specifically, with reference to figure 4 and Fig. 5, may be used in energy storage type photovoltaic or charging device of electric automobile according to 20 kilowtts of the utility model embodiment based on the two-way contravariant converter of three-phase of silicon carbide MOSFET, DC side can connect the high-voltage energy storage system of any 600 volts to 800 volts, and AC can carry out grid-connected with electric power network.The two-way contravariant converter of this three-phase can deliver stream mode by working direct current, also can be operated in interchange and turn DC state, thus needs to realize two-way energy transformation according to system energy.When being operated under alternating current transfers galvanic condition to, high power factor correction can be carried out by control strategy; Under being operated in direct current and transferring the condition of alternating current to, low total harmonic distortion can be realized by control strategy.
Wherein, as shown in Figure 5, main power section, digital control part, drive part and accessory power supply part is included in converter hardware configuration.Main power section is responsible for conversion and the transmission of energy, it is the core system of whole converter, it includes the three-phase two level main power circuit based on silicon carbide MOSFET, the various sampling section such as direct voltage sample circuit, alternating current sample circuit, alternating voltage sampling circuit, line voltage sample circuit, drive circuit, input filter, output filter (i.e. the first filter circuit), electromagnetism anti-interference filtration circuit and control relay circuit etc.
Digital control part comprises digital sample, port controlling and output drive control signal.Space vector pulse width modulation is utilized to control system by modulus sample circuit.
The input of auxiliary electric power supply part is connected to DC side and powers to accessory power supply, isolated single-ended reverse exciting circuit realiration positive 12 volts and the output of negative 12 volts of isolation burning voltages of circuit sampling 1700 volts of 1 ohm of silicon carbide MOSFETs, wherein positive 12 volts except giving digital control plate and main power drive and powering, power to 12 watts of fans simultaneously.Wherein, fan can be used for carrying out air-cooled to converter radiator.
In the present embodiment, 20 kilowtts based on the silicon carbide MOSFET in the two-way contravariant converter of three-phase of silicon carbide MOSFET Drive Structure as shown in Figure 7, it comprise drive part power isolated DC turn DC converter, signal isolation and drive and with the interface of control section.Positive 12 volt input voltage that isolated DC turns DC converter obtain from accessory power supply, positive 24 volts are boosted to after electrical isolation conversion, positive 24 volts of power supplys are powered with driving to signal isolation on the one hand, on the other hand by resistance to 5 volts of voltage stabilizing didoes and capacitor charging, right positive left negative 5 volts of voltage stabilizings are produced in drive circuit, the driving voltage of opening making silicon carbide MOSFET is like this 19 volts, and shutoff voltage is negative 5 volts of voltages.This type of drive automatically can produce negative voltage and turn off in drive circuit, does not need in accessory power supply, produce isolation negative pressure.And the shutoff of negative voltage helps silicon carbide MOSFET to avoid misleading of the interference switch tube produced due to switching speed faster.
In sum, according to the two-way contravariant converter of the three-phase of the utility model embodiment, device for power switching all adopts novel silicon carbide MOSFET, the switch operating frequency of device for power switching can be improved, optimize the design of the first filter circuit, realize the work of more high efficiency and more high power density.And owing to being two Level Technology, circuit design is simple and reliable, volume and the size of energy-storage system can also be reduced, reduce research and development, produce and cost of transportation.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present utility model or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and described embodiment of the present utility model, for the ordinary skill in the art, be appreciated that and can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present utility model and spirit, scope of the present utility model is by claims and equivalency thereof.
Claims (5)
1. the two-way contravariant converter of three-phase, is characterized in that, comprising:
First silicon carbide MOSFET and the second silicon carbide MOSFET, the described drain electrode of the first silicon carbide MOSFET is connected with the positive terminal of DC power supply, the source electrode of described first silicon carbide MOSFET is connected with the drain electrode of described second silicon carbide MOSFET, the source electrode of described second silicon carbide MOSFET is connected with the negative pole end of described DC power supply, has first node between the source electrode of described first silicon carbide MOSFET and the drain electrode of described second silicon carbide MOSFET;
3rd silicon carbide MOSFET and the 4th silicon carbide MOSFET, the drain electrode of described 3rd silicon carbide MOSFET is connected with the positive terminal of described DC power supply, the source electrode of described 3rd silicon carbide MOSFET is connected with the drain electrode of described 4th silicon carbide MOSFET, the source electrode of described 4th silicon carbide MOSFET is connected with the negative pole end of described DC power supply, has Section Point between the source electrode of described 3rd silicon carbide MOSFET and the drain electrode of described 4th silicon carbide MOSFET;
5th silicon carbide MOSFET and the 6th silicon carbide MOSFET, the drain electrode of described 5th silicon carbide MOSFET is connected with the positive terminal of described DC power supply, the source electrode of described 5th silicon carbide MOSFET is connected with the drain electrode of described 6th silicon carbide MOSFET, the source electrode of described 6th silicon carbide MOSFET is connected with the negative pole end of described DC power supply, has the 3rd node between the source electrode of described 5th silicon carbide MOSFET and the drain electrode of described 6th silicon carbide MOSFET;
First filter circuit, one end of described first filter circuit is connected with described 3rd node with described first node, described Section Point respectively, and the other end of described first filter circuit is connected with AC power;
Drive and Control Circuit, described Drive and Control Circuit exports six groups of drive control signal to the first to the 6th silicon carbide MOSFET respectively to control the turn-on and turn-off of the described first to the 6th silicon carbide MOSFET, to make described three-phase two-way contravariant converter that the direct current that described DC power supply exports is converted to alternating current, or the alternating current that described AC power exports is converted to direct current.
2. the two-way contravariant converter of three-phase as claimed in claim 1, it is characterized in that, the switch operating frequency of the described first to the 6th silicon carbide MOSFET is greater than 40 KHz.
3. the two-way contravariant converter of three-phase as claimed in claim 1, it is characterized in that, described first filter circuit comprises the first filter inductance, second filter inductance and the 3rd filter inductance, one end of described first filter inductance is connected with described first node, the other end of described first filter inductance is connected with the A phase of described AC power, one end of described second filter inductance is connected with described Section Point, the other end of described second filter inductance is connected with the B phase of described AC power, one end of described 3rd filter inductance is connected with described 3rd node, the described other end of the 3rd filter inductance is connected with the C phase of described AC power.
4. the two-way contravariant converter of three-phase as claimed in claim 3, is characterized in that, described first filter inductance, the second filter inductance and the 3rd filter inductance all adopt flat copper wire to be wound on design in annular core.
5. the two-way contravariant converter of three-phase as claimed in claim 1, it is characterized in that, under the two-way contravariant converter of described three-phase is fully loaded with the condition of work, the junction temperature of the described first to the 6th silicon carbide MOSFET is less than 80 degrees Celsius.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108667333A (en) * | 2018-04-04 | 2018-10-16 | 广东科学技术职业学院 | A kind of bidirectional converter system |
| CN111697862A (en) * | 2020-06-27 | 2020-09-22 | 南通大学 | Three-phase bridge type low-parasitic oscillation two-level SiC MOSFET circuit topological structure |
-
2015
- 2015-03-30 CN CN201520184958.0U patent/CN204517697U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108667333A (en) * | 2018-04-04 | 2018-10-16 | 广东科学技术职业学院 | A kind of bidirectional converter system |
| CN111697862A (en) * | 2020-06-27 | 2020-09-22 | 南通大学 | Three-phase bridge type low-parasitic oscillation two-level SiC MOSFET circuit topological structure |
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