CN100440701C - A current regulator for charging and discharging of superconducting magnet - Google Patents
A current regulator for charging and discharging of superconducting magnet Download PDFInfo
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- CN100440701C CN100440701C CNB031374603A CN03137460A CN100440701C CN 100440701 C CN100440701 C CN 100440701C CN B031374603 A CNB031374603 A CN B031374603A CN 03137460 A CN03137460 A CN 03137460A CN 100440701 C CN100440701 C CN 100440701C
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Abstract
The present invention relates to a current regulator for charging and discharging a superconducting magnet, which belongs to the technical field of electrotechnics. The present invention is composed of a voltage unit, a transformer unit and a current unit, wherein the voltage unit is a voltage source current converter of which the direct current side is provided with a capacitor, and the current unit is a current source current converter of which the direct current side is connected with a superconducting magnet. The alternating current output side of the voltage source current converter is connected with the primary edge of a transformer, and the alternating current output side of the current source current converter is connected with the auxiliary edge of the transformer, wherein the transformer unit can be a common transformer, or a transformer of which one side or both sides are provided with a tap. The present invention can charge a magnet and release electric energy stored in the magnet, and the voltage for charging and discharging is flexible and adjustable. With the advantages of simple and compact structure, high power density and small volume, the present invention enhances the performance of a charging and discharging system of a magnet, and greatly reduces cost.
Description
Technical field
The present invention relates to a kind of current regulator that superconducting magnet discharges and recharges that is used for, belong to electrical technology field.
Background technology
Zero resistance that superconduction has and the big characteristic of high-intensity magnetic field download stream ability, make that superconducting magnet has obtained using widely, especially for the large-scale magnet that is used to produce high-intensity magnetic field in the high-energy physics experiment, almost be substituted the conventional magnet that all volumes are big, power consumption is many; Simultaneously, along with the development of superconducting power technology, particularly miniature superconducting energy storage, commercialization abroad is widely used in and improves the quality of power supply, raising stability of power system etc., and these all make superconducting magnet obtain unprecedented application.
The general running current of superconducting magnet is all in the kA level, and is a big inductance, and this technology of discharging and recharging to superconducting magnet has proposed new requirement.Charging and discharging currents is big, voltage is low, and charging/discharging voltage excursion stable and voltage is big, needs the switching frequency height simultaneously, power density is big and control performance good, these all are to be used for the basic demand that superconducting magnet discharges and recharges, and require more urgent especially on the miniature superconducting energy storage of commercialization.
Scheme at present commonly used all is to adopt each cover of charging/discharging apparatus, United States Patent (USP) Pub.No.US2002/0030952 " superconducting magnet charging method and device " for example, United States Patent (USP) 5,181,170 " superconducting magnet and electric supply installations thereof ".In the above-mentioned prior art: charging can be finished two functions: during stable state to superconducting magnet charging and to keep magnet current constant; Discharge equipment is that chopper is finished quick discharge function.The problem that exists is: discharging and recharging not only needs two complete equipments, and if charging device should keep that magnet current is constant finishes quick-charge function then capacity is very big again, as United States Patent (USP) 6,157,094 " superconducting magnet and electric supply installation thereof "; The US2002/0030952 that discharge equipment, Fig. 1 show " superconducting magnet charging method and device ", 10,11 is magnet part among the concrete structure figure, 19 is the magnet charge power supply, other parts are discharge portion, also are chopper, and it is directly converted to voltage with the electric current of superconducting magnet.It is directly cut magnet current by switch 22 and 20, this makes switching loss very big, and the condenser capacity that direct voltage 25 parts need is very big, thereby the exciting voltage of magnet is big, this is stable not only bad for magnet, and make the magnet A.C.power loss increase, improved the operating cost of magnet.
Summary of the invention
Technology of the present invention is dealt with problems and is: for overcoming the deficiency of prior art, a kind of current regulator that superconducting magnet discharges and recharges that is used for is provided, not only can charge to magnet, the electric energy of storing in the magnet can also be discharged, and charging/discharging voltage is adjustable flexibly, and simple and compact for structure, the power density height, volume is little, has not only improved the performance of magnet charge-discharge system, and can significantly reduce cost.
Technical solution of the present invention is: a kind ofly be used for the current regulator that superconducting magnet discharges and recharges, it is made up of voltage cell, transformer unit and current unit three parts.Its characteristics are: the voltage source converter of voltage cell, and its DC side connects capacitor, and switch is insulated gate bipolar transistor IGBT (in backward diode in parallel is arranged) or other, and structure is full-bridge or full wave type topology.Current unit is a current source converter (csc), the direct current side joint superconducting magnet of current source converter (csc), and switch is composed in series by insulated gate bipolar transistor IGBT and diode, and structure is full-bridge or full wave type topology.The interchange outlet side of voltage source converter links to each other with the former limit of transformer, and the interchange outlet side of current source converter (csc) links to each other with the transformer secondary, and transformer is a common transformer, or a side or both sides are all the transformer of band tap.The present invention is the charging voltage of scalable magnet not only, charges to magnet; And the discharge voltage of scalable magnet, the electric energy of storing in the magnet is discharged as requested flexibly, be used to improve the quality of power supply, improve stability of power system.Current unit electric current of the present invention is big but voltage is low, and voltage cell electric current and voltage are all little for contact capacity, this has not only reduced switching loss, can also improve switching frequency, thereby reduced the capacitor volume in the voltage cell greatly, dwindle the volume of transformer in the transformer unit, thereby improved power density and systematic function.The present invention is simple and compact for structure, has not only improved the performance of magnet charge-discharge system, and can significantly reduce expense and reduce cost.
Description of drawings
Fig. 1 is the schematic diagram of prior art U.S. Pat 2002/0030952;
Fig. 2 is a main circuit line map of the present invention, among the figure: U
IBe current unit, U
TTransformer unit, U
VVoltage cell, S1, S2, S3, S4, S5, S6, S7 and S8 are switch, and DC is a DC power supply, and LOAD is load, the C capacitor, the tapped transformer of T subcarrier band, * indication transformer end of the same name, L are superconducting magnet, the I magnet current;
Fig. 3 is the main circuit schematic diagram of Fig. 2 of the present invention, and among the figure: S1, S2, S3, S4, S5, S6, S7 and S8 are switch, and DC is a DC power supply, and LOAD is load, C capacitor, L
PBe the former limit that transformer T is connected with voltage cell, L1, L2 are respectively two windings of the secondary that transformer T is connected with current unit, and * indication transformer end of the same name, L are superconducting magnet, the I magnet current;
Fig. 4 is specific embodiments of the invention 1: the line map of the current regulator of transformer subcarrier band tap, and among the figure: U
IBe current unit, U
TTransformer unit, U
VVoltage cell, T1, T2, T3, T4, T5, T6 are insulated gate bipolar transistor IGBT, D1, D2, D3, D4, D5, D6 are and insulated gate bipolar transistor IGBT T1, T2, T3, T4, T5, T6 diode connected in parallel, D11, D21 are respectively the diode that is in series with insulated gate bipolar transistor IGBT T1, T2, S1 and S2 are switch, DC is a DC power supply, LOAD is load, the C capacitor, the tapped transformer of T subcarrier band, * indication transformer end of the same name, L is a superconducting magnet;
Fig. 5 is specific embodiments of the invention 2: the former secondary of transformer is all with the line map of the current regulator of tap, among the figure: U
IBe current unit, U
TTransformer unit, U
VVoltage cell, T1, T2, T3, T4 are insulated gate bipolar transistor IGBT, D1, D2, D3, D4 be and insulated gate bipolar transistor IGBT T1, T2, T3, T4 diode connected in parallel, and D11, D21 are respectively the diode that is in series with insulated gate bipolar transistor IGBT T1, T2, and S1 and S2 are switch, DC is a DC power supply, LOAD is load, the C capacitor, and the former secondary of T all is with tapped transformer, * indication transformer end of the same name, L is a superconducting magnet;
Fig. 6 is specific embodiments of the invention 3: the line map of the current regulator of the former sideband tap of transformer, and among the figure: U
IBe current unit, U
TTransformer unit, U
VVoltage cell, T1, T2, T3, T4, T5, T6 are insulated gate bipolar transistor IGBT, D1, D2, D3, D4, D5, D6 are and insulated gate bipolar transistor IGBT T1, T2, T3, T4, T5, T6 diode connected in parallel, D11, D21, D31, D41 are respectively the diode that is in series with insulated gate bipolar transistor IGBT T1, T2, T3, T4, S1 and S2 are switch, DC is a DC power supply, LOAD is load, the C capacitor, the transformer of the former sideband tap of T, * indication transformer end of the same name, L is a superconducting magnet;
Fig. 7 is specific embodiments of the invention 4: the line map of the current regulator of the neither band tap of the former secondary of transformer, and among the figure: U
IBe current unit, U
TTransformer unit, U
VVoltage cell, T1, T2, T3, T4, T5, T6, T7, T8 is an insulated gate bipolar transistor IGBT, D1, D2, D3, D4, D5, D6, D7, D8 is and insulated gate bipolar transistor IGBT D1, D2, D3, D4, D5, D6, D7, the D8 diode connected in parallel, D11, D21, D31, D41 is respectively and insulated gate bipolar transistor IGBT T1, T2, T3, the diode that T4 is in series, S1 and S2 are switch, DC is a DC power supply, LOAD is load, the C capacitor, the transformer of the neither band tap of the former secondary of T, * indication transformer end of the same name, L is a superconducting magnet.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Main circuit line map of the present invention as shown in Figure 2, Fig. 3 is a main circuit schematic diagram of the present invention.
Among Fig. 2, the present invention is by voltage cell U
V, transformer unit U
T, with current unit U
IThree parts are formed.Transformer unit U
TFor with current unit U
IThe transformer of a side band tap that links to each other.Voltage cell U
VBe that a DC side is capacitor C and two brachium pontis of the voltage source converter that is composed in series in twos by switch S 3 and S4, S5 and S6 respectively compose in parallel, the mid point of two brachium pontis, i.e. the interchange output of voltage source converter links to each other with the former limit of transformer T.Current unit U
IBe a current source converter (csc), its DC side one end is connected in the centre tap of transformer T, and first switch S 1 that the other end is connected with two terminals up and down of transformer T respectively by a side, the opposite side of second switch S2 are formed by connecting jointly; The DC side of current source converter (csc) is connected with superconducting magnet L, and the dc bus capacitor device C of voltage source converter with close S7 and DC power supply DC, octavo by minion respectively and close S8 and the load LOAD branch road of forming that is in series and be connected in parallel.
Fig. 3 is main circuit schematic diagram of the present invention, wherein L
PIndication transformer T and voltage cell U
VThe former limit that is connected, L1, L2 be indication transformer T and current unit U respectively
ITwo windings of the secondary that is connected, * indication transformer end of the same name.
Minion is closed the S7 closure, when octavo pass S8 opens, that is to say that current regulator links to each other with DC power supply DC, and L charges to magnet.Specific as follows: the voltage cell U of current regulator
VDc terminal capacitor C link to each other with DC power supply DC, provide voltage or energy by the latter.When the 3rd switch S 3 that will form the voltage converter respectively and the 6th switch S 6, the 4th switch S 4 and the 5th switch S 5 were alternately cut-off, the interchange outlet side of voltage converter promptly was the former limit L of transformer T
PBe ac square wave, the secondary of transformer that is to say that the two ends of secondary winding L 1, L2 are output as ac square wave, and this moment, first switch S 1, the second switch S2 of current source converter (csc) worked in rectification state, gives magnet L charging.The big I of magnet L two ends charging voltage is recently regulated by the 3rd switch S 3 of regulation voltage converter and the duty of the 6th switch S 6, the 4th switch S 4 and the 5th switch S 5.Logical relation is as follows: the 3rd switch S 3 and the 6th switch S 6 closures, the 4th switch S 4 and the 5th switch S 5 are opened, the former limit L of transformer T
PBe output as the voltage of capacitor C, be positive voltage, this moment closed second switch S2, the two ends of L2 be output as after the transformer transformation on the occasion of voltage, voltage direction determine that by end of the same name size is voltage/transformer voltage ratio of capacitor C, charges to magnet L.If the 3rd switch S 3 and the 6th switch S 6, the 4th switch S 4 and the 5th switch S 5 are opened simultaneously, transformer T is output as zero, and magnet L both end voltage is zero, and the electric current I of magnet L remains unchanged, and more than is the upper half of the action of switch S 3 and S6, S4 and S5; When the 4th switch S 4 and the 5th switch S 5 closures, the 3rd switch S 3 and the 6th switch S 6 are opened, the former limit L of transformer T
PBe output as the reverse voltage of capacitor C, be negative voltage, this moment closed first switch S 1, the two ends of L1 are output as the negative value voltage after the transformer transformation, voltage direction is determined by end of the same name, size is voltage/transformer voltage ratio of capacitor C, and magnet L both end voltage is opposite with the direction of both ends of L1, and its value of equal and opposite in direction still is positive.The voltage of capacitor C after the transformer transformation and the merchant of transformer voltage ratio, identical with switch S 3 with the upper half of the action of S6, S4 and S5, give magnet L charging; If the 3rd switch S 3 and the 6th switch S 6, the 4th switch S 4 and the 5th switch S 5 are opened simultaneously, transformer T is output as zero, magnet L both end voltage is zero, the electric current I of magnet L remains unchanged, this upper half with the action of S3 and S6, S4 and S5 is identical, is the lower half of switch S 3 with the action of S6, S4 and S5.By the duty ratio in half cycle of by-pass cock S3 and S6 and S4 and S5, the average voltage at scalable magnet L two ends, the i.e. charging voltage of flexible magnet.
Octavo is closed the S8 closure, when minion pass S7 opens, that is to say that current regulator links to each other with load LOAD, and L discharges to magnet.Specific as follows: the voltage cell U of current regulator
VThe initial value of dc terminal capacitor C can be given by DC power supply DC.When the 3rd switch S 3 that will form the voltage converter respectively and the 6th switch S 6, the 4th switch S 4 and the 5th switch S 5 were cut-off, the interchange outlet side of voltage converter promptly was the former limit L of transformer T
PBe ac square wave, the secondary of transformer that is to say that the two ends of secondary winding L 1, L2 are output as ac square wave, and this moment, first switch S 1, the second switch S2 of electric current converter worked in inverter mode, gives magnet L discharge.If the electric current I direction of magnet L as shown in Figure 2, first switch S 1, second switch S2 are all closed, the switching logic relation is as follows: the 3rd switch S 3 and the 6th switch S 6 closures, the 4th switch S 4 and the 5th switch S 5 are opened, the former limit LP of transformer T is output as the voltage of capacitor C, be positive voltage, open second switch S2 this moment, the two ends of L1 be output as after the transformer transformation (voltage direction is determined by end of the same name on the occasion of voltage, size is voltage/transformer voltage ratio of capacitor C), that is to say magnet L both end voltage, it is opposite with the electric current I direction of magnet L, magnet L discharge.If the 3rd switch S 3 and the 6th switch S 6, the 4th switch S 4 and the 5th switch S 5 are opened simultaneously, transformer T is output as zero, and magnet L both end voltage is zero, and the electric current I of magnet L remains unchanged, and more than is the upper half of the action of switch S 3 and S6, S4 and S5; When the 4th switch S 4 and the 5th switch S 5 closures, the 3rd switch S 3 and the 6th switch S 6 are opened, the former limit LP of transformer T is output as the reverse voltage of capacitor C, be negative voltage, open first switch S 1 this moment, the two ends of L2 are output as the negative value voltage after the transformer transformation, and voltage direction is determined that by end of the same name size is voltage/transformer voltage ratio of capacitor C.The two ends output voltage that is equivalent to L2 be after the transformer transformation on the occasion of voltage, voltage direction is opposite with the direction of end decision of the same name, and size is voltage/transformer voltage ratio of capacitor C, that is to say magnet L both end voltage, it is opposite with the electric current I direction of magnet L, magnet L discharge.If the 3rd switch S 3 and the 6th switch S 6, the 4th switch S 4 and the 5th switch S 5 are opened simultaneously, transformer T is output as zero, magnet L both end voltage is zero, the electric current I of magnet L remains unchanged, this upper half with the action of Three S's 3 and the 6th switch S 6, the 4th switch S 4 and the 5th switch S 5 is identical, is the lower half of the action of the 3rd switch S 3 and the 6th switch S 6, the 4th switch S 4 and the 5th switch S 5.By regulating the duty ratio in half cycle of the 3rd switch S 3 and the 6th switch S 6 and the 4th switch S 4 and the 5th switch S 5, the average voltage at scalable magnet L two ends, the i.e. discharge voltage of flexible magnet L.Like this electric energy of storing in the magnet is discharged as requested neatly, be used to improve the quality of power supply, improve stability of power system etc.
Fig. 4 is embodiments of the invention 1.The present invention is made up of with current unit UI three parts voltage cell UV, transformer unit UT.Transformer unit UT is the transformer of the subcarrier band tap that links to each other with current unit UI.Voltage cell UV is composed in parallel with two brachium pontis of the voltage source converter that is composed in series in twos by four insulated gate bipolar transistor IGBT T3 and T4, T5 and T6 respectively by the capacitor C of DC side, wherein the 3rd insulated gate bipolar transistor IGBT T3 connects with the 4th insulated gate bipolar transistor IGBT T4, and the 5th insulated gate bipolar transistor IGBT T5 connects with the 6th insulated gate bipolar transistor IGBT T6.The mid point of two brachium pontis that is to say that the interchange output of voltage source converter links to each other with the former limit of transformer T; The switch of current unit UI current source converter (csc) is by insulated gate bipolar transistor IGBT T1, T2 and diode D11, D21 is composed in series, the connected mode of current source converter (csc) and transformer is: the centre tap of transformer T is connected in the upper terminal of DC side one end transformer T of current source converter (csc) and first unit switch of current source converter (csc), promptly the first insulated gate bipolar transistor IGBT T1 and the first diode D11 are connected into branch road one by one, second unit switch of the lower terminal of transformer T and current source converter (csc), promptly the second insulated gate bipolar transistor IGBT T2 and the second diode D21 are connected into branch road one by one, and two branch roads are connected in the other end of the DC side of current source converter (csc) jointly at the negative electrode of the first diode D11 and the second diode D21.The DC side of current source converter (csc) is connected with superconducting magnet L.And the dc bus capacitor device C of voltage source converter respectively with the branch road that is composed in series by first switch S 1 and DC power supply DC, and the branch road that second switch S2 and load LOAD are composed in series is connected in parallel.Wherein DC side DC is the controlled rectification bridge, insulated gate bipolar transistor IGBT T1, T2, T3, T4, T5 and T6 can also be gate level turn-off thyristor GTO, power field effect transistor MOSFET, other controls power electronic device or superconducting switch entirely, transformer T can be conventional transformer or superconducting transformer, and switch S 1, S2 can be solid-state switch or electric switch.
The action logic relation of switching device is as follows: first switch S, 1 closure, when second switch S2 opened, L charged to magnet.The 3rd insulated gate bipolar transistor IGBT T3 and the 6th insulated gate bipolar transistor IGBT T6 closure, the 4th insulated gate bipolar transistor IGBT T4 and the 5th insulated gate bipolar transistor IGBT T5 open, this moment, the closed second insulated gate bipolar transistor IGBT T2 gave magnet L charging.If the 3rd insulated gate bipolar transistor IGBT T3 and the 6th insulated gate bipolar transistor IGBT T6, the 4th insulated gate bipolar transistor IGBT T4 and the 5th insulated gate bipolar transistor IGBT T5 open simultaneously, the electric current I of magnet L remains unchanged, and more than is the upper half of the action of insulated gate bipolar transistor IGBT T3 and T6, T4 and T5; When the 4th insulated gate bipolar transistor IGBT T4 and the 5th insulated gate bipolar transistor IGBT T5 closure, the 3rd insulated gate bipolar transistor IGBT T3 and the 6th insulated gate bipolar transistor IGBT T6 open, this moment, the closed first insulated gate bipolar transistor IGBT T1 gave magnet L charging; If the 3rd insulated gate bipolar transistor IGBT T3 and the 6th insulated gate bipolar transistor IGBT T6, the 4th insulated gate bipolar transistor IGBT T4 and the 5th insulated gate bipolar transistor IGBT T5 open simultaneously, the electric current I of magnet L remains unchanged, this upper half with the action of insulated gate bipolar transistor IGBT T3 and T6, T4 and T5 is identical, is the lower half of the action of insulated gate bipolar transistor IGBT T3 and T6, T4 and T5.By regulating the duty ratio in half cycle of insulated gate bipolar transistor IGBT T3 and T6 and T4 and T5, the average voltage at scalable magnet L two ends, the i.e. charging voltage of flexible magnet L.
First switch S, 2 closures, when second switch S1 opened, L discharged to magnet.If the electric current I direction of magnet L as shown in Figure 2, the first insulated gate bipolar transistor IGBT T1, the second insulated gate bipolar transistor IGBT T2 are all closed, the switching logic relation is as follows: the 3rd insulated gate bipolar transistor IGBT T3 and the 6th insulated gate bipolar transistor IGBT T6 closure, the 4th insulated gate bipolar transistor IGBT T4 and the 5th insulated gate bipolar transistor IGBT T5 open, open the second insulated gate bipolar transistor IGBT T2 this moment, magnet L discharge.If the 3rd insulated gate bipolar transistor IGBT T3 and the 6th insulated gate bipolar transistor IGBT T6, the 4th insulated gate bipolar transistor IGBT T4 and the 5th insulated gate bipolar transistor IGBT T5 open simultaneously, the electric current I of magnet L remains unchanged, and more than is the upper half of the action of insulated gate bipolar transistor IGBT T3 and T6, T4 and T5; When the 4th insulated gate bipolar transistor IGBT T4 and the 5th insulated gate bipolar transistor IGBT T5 closure, the 3rd insulated gate bipolar transistor IGBT T3 and the 6th insulated gate bipolar transistor IGBT T6 open, open the first insulated gate bipolar transistor IGBT T1 this moment, magnet L discharge.If the 3rd insulated gate bipolar transistor IGBT T3 and the 6th insulated gate bipolar transistor IGBT T6, the 4th insulated gate bipolar transistor IGBT T4 and the 5th insulated gate bipolar transistor IGBT T5 open simultaneously, the electric current I of magnet L remains unchanged, this upper half with the action of insulated gate bipolar transistor IGBT T3 and T6, T4 and T5 is identical, is the lower half of the action of insulated gate bipolar transistor IGBT T3 and T6, T4 and T5.By regulating the duty ratio in half cycle of the 3rd insulated gate bipolar transistor IGBT T3 and the 6th insulated gate bipolar transistor IGBT T6 and the 4th insulated gate bipolar transistor IGBT T4 and the 5th insulated gate bipolar transistor IGBT T 5, the average voltage at scalable magnet L two ends, the i.e. discharge voltage of flexible magnet L.
Fig. 5 is embodiments of the invention 2.The present invention is made up of with current unit UI three parts voltage cell UV, transformer UT.Transformer unit UT is that former secondary is all with the transformer of tap.The end of voltage cell UV dc bus capacitor device C is connected in the centre tap of transformer T, two terminals up and down of transformer T connect respectively the 3rd insulated gate bipolar transistor IGBT T3, with the collector electrode of the 4th insulated gate bipolar transistor IGBT T4, insulated gate bipolar transistor IGBT T3 and insulated gate bipolar transistor IGBT T4 emitter are connected in the other end of voltage cell UV dc bus capacitor device C jointly.Current unit UI is a current source converter (csc), the switch of current source converter (csc) is by insulated gate bipolar transistor IGBT T1, T2 and diode D11, D21 is composed in series, the connected mode of current source converter (csc) and transformer is: the centre tap of transformer T is connected in its DC side one end, first unit switch of the upper terminal of transformer T and current source converter (csc), promptly the first insulated gate bipolar transistor IGBT T1 and the first diode D11 are connected into branch road one by one, the lower terminal of transformer T respectively with second unit switch of current source converter (csc), promptly the second insulated gate bipolar transistor IGBT T2 and the second diode D21 are connected into branch road one by one, and two branch roads are connected in the other end of the DC side of current source converter (csc) jointly at the negative electrode of the first diode D11 and the second diode D21.The DC side of current source converter (csc) is connected with superconducting magnet L, and the dc bus capacitor device C of voltage source converter is connected in parallel with the branch road that the branch road that is composed in series by first switch S 1 and DC power supply DC and second switch S2 and load LOAD are composed in series respectively.Wherein DC side DC is the controlled rectification bridge, insulated gate bipolar transistor IGBT T1, T2, T3, T4 can also be gate level turn-off thyristor GTO, power field effect transistor MOSFET, other controls power electronic device or superconducting switch entirely, transformer T can be conventional transformer or superconducting transformer, and switch S 1, S2 can be solid-state switch or electric switch.
The action logic relation of switching device is as follows: first switch S, 1 closure, when second switch S2 opened, L charged to magnet.The 4th insulated gate bipolar transistor IGBT T4 closure, the 3rd insulated gate bipolar transistor IGBT T3 opens, and this moment, the closed second insulated gate bipolar transistor IGBT T2 gave magnet L charging.If the 3rd insulated gate bipolar transistor IGBT T3, the 4th insulated gate bipolar transistor IGBT T4 open simultaneously, the electric current I of magnet L remains unchanged, and more than is the upper half of the action of insulated gate bipolar transistor IGBT T3, T4; When the 3rd insulated gate bipolar transistor IGBT T3 closure, the 4th insulated gate bipolar transistor IGBT T4 opens, and this moment, the closed first insulated gate bipolar transistor IGBT T1 gave magnet L charging; If the 3rd insulated gate bipolar transistor IGBT T3, the 4th insulated gate bipolar transistor IGBT T4 open simultaneously, the electric current I of magnet L remains unchanged, this upper half with the action of insulated gate bipolar transistor IGBT T3, T4 is identical, is the lower half of the action of insulated gate bipolar transistor IGBT T3, T4.By regulating the duty ratio in half cycle of the 3rd insulated gate bipolar transistor IGBT T3 and the 4th insulated gate bipolar transistor IGBT T4, the average voltage at scalable magnet L two ends, the i.e. charging voltage of flexible magnet L.
First switch S, 2 closures, when second switch S1 opened, L discharged to magnet.If the electric current I direction of magnet L as shown in Figure 2, the first insulated gate bipolar transistor IGBT T1, the second insulated gate bipolar transistor IGBT T2 are all closed, the switching logic relation is as follows: the 4th insulated gate bipolar transistor IGBT T4 closure, the 3rd insulated gate bipolar transistor IGBT T3 opens, open the second insulated gate bipolar transistor IGBT T2 this moment, magnet L discharge.If the 3rd insulated gate bipolar transistor IGBT T3, the 4th insulated gate bipolar transistor IGBT T4 open simultaneously, the electric current I of magnet L remains unchanged, and more than is the upper half of the action of insulated gate bipolar transistor IGBT T3, T4; When the 3rd insulated gate bipolar transistor IGBT T3 closure, the 4th insulated gate bipolar transistor IGBT T4 opens, and opens the first insulated gate bipolar transistor IGBT T1 this moment, magnet L discharge.If the 3rd insulated gate bipolar transistor IGBT T3, the 4th insulated gate bipolar transistor IGBT T4 open simultaneously, the electric current I of magnet L remains unchanged, this upper half with the action of insulated gate bipolar transistor IGBT T3, T4 is identical, is the lower half of the action of insulated gate bipolar transistor IGBT T3, T4.By regulating the 3rd insulated gate bipolar transistor IGBT T3 and the duty ratio of the 4th insulated gate bipolar transistor IGBT T4 in half cycle, the average voltage at scalable magnet L two ends, the i.e. discharge voltage of flexible magnet L.
Fig. 6 is embodiments of the invention 3.The present invention is made up of with current unit UI three parts voltage cell UV, transformer UT.Transformer unit UT is the transformer of the former sideband tap that links to each other with voltage cell UI.The end of voltage cell UV dc bus capacitor device C is connected in the centre tap on the former limit of transformer T, two terminals up and down of transformer T connect the collector electrode of the 5th insulated gate bipolar transistor IGBT T5 and the 6th insulated gate bipolar transistor IGBT T6 respectively, and the 5th insulated gate bipolar transistor IGBT T5 and the 6th insulated gate bipolar transistor IGBT T6 emitter are connected in the other end of voltage cell UV dc bus capacitor device C jointly.Current unit UI is a current source converter (csc), and its DC side connects superconducting magnet L, and the switch of current source converter (csc) is composed in series by insulated gate bipolar transistor IGBT T1, T2, T3, T4 and diode D11, D21, D31, D41; The superconducting magnet L of the DC side of current source converter (csc) is in parallel with two brachium pontis of the current source converter (csc) that diode D11, D21, D31, D41 by insulated gate bipolar transistor IGBT T1, T2, T3, T4 and series connection with it forms, in these two brachium pontis, the first insulated gate bipolar transistor IGBT T1 connects with the first diode D11, the second insulated gate bipolar transistor IGBT T2 connects with the second diode D21, and these two series arms are composed in series a brachium pontis again; The 3rd insulated gate bipolar transistor IGBT T3 connects with the 3rd diode D31, and the 4th insulated gate bipolar transistor IGBT T4 connects with the 4th diode D41, and these two series arms are composed in series another brachium pontis again.The mid point of two brachium pontis that is to say that the interchange output of current source converter (csc) links to each other with transformer T secondary.The dc bus capacitor device C of voltage source converter is connected in parallel with the branch road that the branch road that is composed in series by first switch S 1 and DC power supply DC and second switch S2 and load LOAD are composed in series respectively.Wherein DC side DC is the controlled rectification bridge, insulated gate bipolar transistor IGBT T1, T2, T3, T4, T5 and T6 can also be gate level turn-off thyristor GTO, power field effect transistor MOSFET, other controls power electronic device or superconducting switch entirely, transformer T can be conventional transformer or superconducting transformer, and switch S 1, S2 can be solid-state switch or electric switch.
The action logic relation of switching device is as follows: first switch S, 1 closure, when second switch S2 opened, L charged to magnet.The 6th insulated gate bipolar transistor IGBT T6 closure, the 5th insulated gate bipolar transistor IGBT T5 opens, and this moment, the closed second insulated gate bipolar transistor IGBT T2, the 3rd insulated gate bipolar transistor IGBT T3 gave magnet L charging.If the 5th insulated gate bipolar transistor IGBT T5, the 6th insulated gate bipolar transistor IGBT T6 open simultaneously, the electric current I of magnet L remains unchanged, and more than is the upper half of the action of insulated gate bipolar transistor IGBT T5, T6; When the 5th insulated gate bipolar transistor IGBT T5 closure, the 6th insulated gate bipolar transistor IGBT T6 opens, and this moment, the closed first insulated gate bipolar transistor IGBT T1, the 4th insulated gate bipolar transistor IGBT T4 gave magnet L charging; If the 5th insulated gate bipolar transistor IGBT T5, the 6th insulated gate bipolar transistor IGBT T6 open simultaneously, the electric current I of magnet L remains unchanged, this upper half with the action of insulated gate bipolar transistor IGBT T5, T6 is identical, is the lower half of the action of insulated gate bipolar transistor IGBT T5, T6.By regulating the duty ratio in half cycle of insulated gate bipolar transistor IGBT T5 and T6, the average voltage at scalable magnet L two ends, the i.e. charging voltage of flexible magnet L.
First switch S, 2 closures, when second switch S1 opened, L discharged to magnet.If the electric current I direction of magnet L as shown in Figure 2, insulated gate bipolar transistor IGBT T1, T2, T3, T4 are all closed, the switching logic relation is as follows: the 6th insulated gate bipolar transistor IGBT T6 closure, the 5th insulated gate bipolar transistor IGBT T5 opens, open the second insulated gate bipolar transistor IGBT T2, the 3rd insulated gate bipolar transistor IGBT T3 this moment, magnet L discharge.If the 5th insulated gate bipolar transistor IGBT T5, the 6th insulated gate bipolar transistor IGBT T6 open simultaneously, the electric current I of magnet L remains unchanged, and more than is the upper half of the action of insulated gate bipolar transistor IGBT T5, T6; When the 5th insulated gate bipolar transistor IGBT T5 closure, the 6th insulated gate bipolar transistor IGBT T6 opens, and opens the first insulated gate bipolar transistor IGBT T1, the 4th insulated gate bipolar transistor IGBT T4 this moment, magnet L discharge.If the 5th insulated gate bipolar transistor IGBT T5, the 6th insulated gate bipolar transistor IGBT T6 open simultaneously, the electric current I of magnet L remains unchanged, this upper half with the action of insulated gate bipolar transistor IGBT T5, T6 is identical, is the lower half of the action of insulated gate bipolar transistor IGBT T5, T6.By regulating the 5th insulated gate bipolar transistor IGBT T5 and the duty ratio of the 6th insulated gate bipolar transistor IGBT T6 in half cycle, the average voltage at scalable magnet L two ends, the i.e. discharge voltage of flexible magnet L.
Fig. 7 is embodiments of the invention 4.The present invention is made up of with current unit UI three parts voltage cell UV, transformer UT.Transformer unit UT is the common transformer of the neither band tap of former secondary.The capacitor C of voltage cell UV DC side is in parallel with two brachium pontis of the voltage source converter that is composed in series in twos by four insulated gate bipolar transistor IGBT T5 and T6, T7 and T8 respectively, wherein the 5th insulated gate bipolar transistor IGBT T5 and the 6th insulated gate bipolar transistor IGBT T6 series connection, the 7th insulated gate bipolar transistor IGBT T7 and the 8th insulated gate bipolar transistor IGBT T6 series connection.The mid point of two brachium pontis that is to say that the interchange output of voltage source converter links to each other with the former limit of transformer T.Current unit UI is a current source converter (csc), the switch of current source converter (csc) is by insulated gate bipolar transistor IGBT T1, T2, T3, T4 and diode D11, D21, D31, D41 is composed in series, the DC side of current source converter (csc) is connected with superconducting magnet L, superconducting magnet L with by insulated gate bipolar transistor IGBT T1, T2, T3, the diode D11 of T4 and series connection with it, D21, D31, two brachium pontis parallel connections of the current source converter (csc) that D41 forms, in two brachium pontis of current source converter (csc) DC side, the first insulated gate bipolar transistor IGBT T1 connects with the first diode D11, the second insulated gate bipolar transistor IGBT T2 connects with the second diode D21, and these two series arms are composed in series a brachium pontis again; The 3rd insulated gate bipolar transistor IGBT T3 connects with the 3rd diode D31, and the 4th insulated gate bipolar transistor IGBT T4 connects with the 4th diode D41, and these two series arms are composed in series another brachium pontis again; Two brachium pontis parallel connections of the current source converter (csc) that four series arms like this are composed in series in twos again.The mid point of two brachium pontis that is to say that the interchange output of current source converter (csc) links to each other with transformer T secondary.The dc bus capacitor device C of voltage source converter and the branch road, second switch S2 and the load LOAD that are composed in series by first switch S 1 and the DC power supply DC respectively branch road of forming that is in series is connected in parallel.Wherein DC side DC is the controlled rectification bridge, insulated gate bipolar transistor IGBT T1, T2, T3, T4, T5, T6, T7 and T8 can also be gate level turn-off thyristor GTO, field effect transistor M OSFET, other controls power electronic device or superconducting switch entirely, transformer T can be conventional transformer or superconducting transformer, and switch S 1, S2 can be solid-state switch or electric switch.
The action logic relation of switching device is as follows: first switch S, 1 closure, when second switch S2 opened, L charged to magnet.The 5th insulated gate bipolar transistor IGBT T5, the 8th insulated gate bipolar transistor IGBT T8 closure, the 6th insulated gate bipolar transistor IGBT T6, the 7th insulated gate bipolar transistor IGBT T7 open, this moment, the closed second insulated gate bipolar transistor IGBT T2, the 3rd insulated gate bipolar transistor IGBT T3 gave magnet L charging.If the 5th insulated gate bipolar transistor IGBT T5, the 6th insulated gate bipolar transistor IGBT T6, the 7th insulated gate bipolar transistor IGBT T7, the 8th insulated gate bipolar transistor IGBT T8 open simultaneously, the electric current I of magnet L remains unchanged, and more than is the upper half of the action of insulated gate bipolar transistor IGBT T5, T6, T7, T8; When insulated gate bipolar transistor IGBT T5, the 8th insulated gate bipolar transistor IGBT T8 open, the 6th insulated gate bipolar transistor IGBT T6, the 7th insulated gate bipolar transistor IGBT T7 closure, this moment, the closed first insulated gate bipolar transistor IGBT T1, the 4th insulated gate bipolar transistor IGBT T4 gave magnet L charging; If the 5th insulated gate bipolar transistor IGBT T5, the 6th insulated gate bipolar transistor IGBT T6, the 7th insulated gate bipolar transistor IGBT T7, the 8th insulated gate bipolar transistor IGBT T8 open simultaneously, the electric current I of magnet L remains unchanged, this upper half with the action of insulated gate bipolar transistor IGBT T5, T6, T7, T8 is identical, is the lower half of the action of insulated gate bipolar transistor IGBT T5, T6, T7, T8.By regulating insulated gate bipolar transistor IGBT T5 and T8, T6 and the duty ratio of T7 in half cycle, the average voltage at scalable magnet L two ends, the i.e. charging voltage of flexible magnet L.
Second switch S2 closure, when first switch S 1 was opened, L discharged to magnet.If the electric current I direction of magnet L as shown in Figure 2, the first insulated gate bipolar transistor IGBT T1, T2, T3, T4 are all closed, the switching logic relation is as follows: the 5th insulated gate bipolar transistor IGBT T5, the 8th insulated gate bipolar transistor IGBT T8 closure, the 6th insulated gate bipolar transistor IGBT T6, the 7th insulated gate bipolar transistor IGBT T7 open, open the second insulated gate bipolar transistor IGBT T2, the 3rd insulated gate bipolar transistor IGBT T3 this moment, magnet L discharge.If the 5th insulated gate bipolar transistor IGBT IGBT T5, the 6th insulated gate bipolar transistor IGBT T6, the 7th insulated gate bipolar transistor IGBT T7, the 8th insulated gate bipolar transistor IGBT T8 open simultaneously, the electric current I of magnet L remains unchanged, and more than is the upper half of the action of insulated gate bipolar transistor IGBT T5, T6, T7, T8; When the 5th insulated gate bipolar transistor IGBT T5, the 8th insulated gate bipolar transistor IGBT T8 open, the 6th insulated gate bipolar transistor IGBT T6, the 7th insulated gate bipolar transistor IGBT T7 closure, open the first insulated gate bipolar transistor IGBT T1, the 4th insulated gate bipolar transistor IGBT T4 this moment, magnet L discharge.If the 5th insulated gate bipolar transistor IGBT T5, the 6th insulated gate bipolar transistor IGBT T6, the 7th insulated gate bipolar transistor IGBT T7, the 8th insulated gate bipolar transistor IGBT T8 open simultaneously, the electric current I of magnet L remains unchanged, this upper half with the action of insulated gate bipolar transistor IGBT T5, T6, T7, T8 is identical, is the lower half of the action of insulated gate bipolar transistor IGBT T5, T6, T7, T8.By regulating insulated gate bipolar transistor IGBT T5 and T8, T6 and the duty ratio of T7 in half cycle, the average voltage at scalable magnet L two ends, the i.e. discharge voltage of flexible magnet L.
In a model machine, model machine rated capacity: 600W; DC side: 200V, 3A; High frequency transformer: no-load voltage ratio is 10/1,30kHz; Transformer secondary: 15V, 40A; Superconducting magnet: 200mH.The charging/discharging voltage at current unit side magnet two ends all can be in 0～15V scope scalable, the dc bus capacitor device only is 25 μ F, hard switching lower device efficient can reach 98%, and weight only is 0.9kg.
The present invention both can charge to magnet, the electric energy of storing in the magnet can be discharged again, and charging/discharging voltage was adjustable flexibly.Switching frequency height of the present invention, required capacitor volume is little, and volume of transformer is little.The present invention is simple and compact for structure, the power density height, and volume is little.It not only can be used for the charge power supply of large-scale magnet, release part or energy fed back to other system of the energy that its discharging function can be used as the protection magnet; The converter that can also be used for superconducting energy storage.The present invention has not only improved the performance of magnet charge-discharge system, and can significantly reduce expense and reduce cost.
Claims (6)
1, a kind ofly is used for the current regulator that superconducting magnet discharges and recharges, goes out voltage cell (U
V), transformer unit (U
T) and current unit (U
I) three parts composition, voltage cell (U
V) be that a DC side is the voltage source converter of capacitor (C), the interchange outlet side of voltage source converter and transformer (U
T) former limit links to each other; Current unit (U
1) be a current source converter (csc), its current source converter (csc) DC side connects superconducting magnet (L), exchanges outlet side and links to each other with the transformer secondary, it is characterized in that voltage cell (U
V) be switch with the insulated gate bipolar transistor IGBT, adopt full-bridge or full wave type topological structure; Current unit (U
I) switch of current source converter (csc) is composed in series by insulated gate bipolar transistor IGBT and diode, the structure of switch is full-bridge or full wave type topology; The dc bus capacitor device (C) of voltage source converter is connected in parallel with the branch road that load (LOAD) is composed in series with the branch road and the second switch (S2) that are composed in series by first switch (S1) and DC power supply (DC) respectively.
2, be used for the current regulator that superconducting magnet discharges and recharges according to claim 1 is described, it is characterized in that transformer unit (U
T) be and current unit (U
I) transformer of the subcarrier band tap that links to each other; Voltage cell (U
V) compose in parallel by two brachium pontis of dc bus capacitor device (C) with the voltage source converter that is composed in series in twos by four insulated gate bipolar transistor IGBTs (T3, T4, T5, T6) respectively, wherein the 3rd insulated gate bipolar transistor IGBT (T3) is connected with the 4th insulated gate bipolar transistor IGBT (T4), and the 5th insulated gate bipolar transistor IGBT (T5) is connected with the 6th insulated gate bipolar transistor IGBT (T6); The mid point of two brachium pontis, i.e. the interchange output of voltage source converter links to each other with the former limit of transformer (T); The centre tap of transformer (T) is connected in DC side one end of current source converter (csc), the upper terminal of transformer (T) and first unit switch of current source converter (csc), promptly first insulated gate bipolar transistor IGBT (T1) and diode (D11) are connected into branch road one by one, the lower terminal of transformer (T) and second unit switch of current source converter (csc), promptly second insulated gate bipolar transistor IGBT (T2) and second diode (D21) are connected into branch road one by one, and two branch roads are connected in the other end of current source converter (csc) DC side jointly at the negative electrode of first diode (D11) and second diode (D21).
3, be used for the current regulator that superconducting magnet discharges and recharges according to claim 1 is described, it is characterized in that transformer unit (U
T) for former secondary all with the transformer of tap; Voltage cell (U
V) end of dc bus capacitor device (C) is connected in the centre tap of transformer (T), two terminals up and down of transformer (T) connect the collector electrode of the 3rd insulated gate bipolar transistor IGBT (T3) and the 4th insulated gate bipolar transistor IGBT (T4) respectively, and the emitter of the 3rd insulated gate bipolar transistor IGBT (T3) and the 4th insulated gate bipolar transistor IGBT (T4) is connected in voltage cell (U jointly
V) dc bus capacitor device (C) other end; Current unit (U
I) DC side one end of current source converter (csc) connects the centre tap of transformer (T); The centre tap of transformer (T) is connected in DC side one end of current source converter (csc), the upper terminal of transformer (T) and first unit switch of current source converter (csc), promptly first insulated gate bipolar transistor IGBT (T1) and first diode (D11) are connected into branch road one by one, the lower terminal of transformer (T) and second unit switch of current source converter (csc), promptly second insulated gate bipolar transistor IGBT (T2) and second diode (D21) are connected into branch road one by one, and two branch roads are connected in the other end of current source converter (csc) DC side jointly at the negative electrode of first diode (D11) and second diode (D21).
4, be used for the current regulator that superconducting magnet discharges and recharges according to claim 1 is described, it is characterized in that transformer unit (U
T) be the transformer of the former sideband tap that links to each other with voltage cell; Voltage cell (U
V) end of dc bus capacitor device (C) is connected in the centre tap on the former limit of transformer (T), two terminals up and down of transformer (T) connect the collector electrode of the 5th insulated gate bipolar transistor IGBT (T5) and the 6th insulated gate bipolar transistor IGBT (T6) respectively, and the 5th insulated gate bipolar transistor IGBT (T5) and the 6th insulated gate bipolar transistor IGBT (T6) emitter are connected in voltage cell (U jointly
V) other end of dc bus capacitor device (C); Current unit (U
I) superconducting magnet (L) of current source converter (csc) DC side is in parallel with two brachium pontis of the current source converter (csc) of being made up of the diode (D11, D21, D31, D41) of insulated gate bipolar transistor IGBT (T1, T2, T3, T4) and series connection with it, in these two brachium pontis, first insulated gate bipolar transistor IGBT (T1) is connected with first diode (D11), second insulated gate bipolar transistor IGBT (T2) is connected with second diode (D21), and these two series arms are composed in series a brachium pontis again; The 3rd insulated gate bipolar transistor IGBT (T3) is connected with the 3rd diode (D31), and the 4th insulated gate bipolar transistor IGBT (T4) is connected with the 4th diode (D41), and these two series arms are composed in series another brachium pontis again; The mid point of two brachium pontis, i.e. the interchange output of current source converter (csc) links to each other with transformer (T) secondary.
5, be used for the current regulator that superconducting magnet discharges and recharges according to claim 1 is described, it is characterized in that voltage cell (U
V) capacitor (C) of DC side is in parallel with two brachium pontis of the voltage source converter that is composed in series in twos by four insulated gate bipolar transistor IGBTs (T5, T6, T7, T8) respectively, wherein the 5th insulated gate bipolar transistor IGBT (T5) and the 6th insulated gate bipolar transistor IGBT (T6) series connection, the 7th insulated gate bipolar transistor IGBT (T7) and the 8th insulated gate bipolar transistor IGBT (T8) series connection; The mid point of two brachium pontis, i.e. the interchange output of voltage source converter links to each other with the former limit of transformer (T); Current unit (U
I) DC side of current source converter (csc) is that superconducting magnet (L) is in parallel with two brachium pontis of the current source converter (csc) of being made up of the diode (D11, D21, D31, D41) of insulation gate pole bipolar transistor IGBT (T1, T2, T3, T4) and series connection with it, in two brachium pontis, first insulated gate bipolar transistor IGBT (T1) is connected with first diode (D11), second insulated gate bipolar transistor IGBT (T2) is connected with second diode (D21), and these two series arms are composed in series a brachium pontis again; The 3rd insulated gate bipolar transistor IGBT (T3) is connected with the 3rd diode (D31), and the 4th insulated gate bipolar transistor IGBT (T4) is connected with the 4th diode (D41), and these two series arms are composed in series another brachium pontis again; Two brachium pontis parallel connections of the current source converter (csc) that four series arms like this are composed in series in twos again; The mid point of two brachium pontis, i.e. the interchange output of current source converter (csc) links to each other with transformer (T) secondary.
6, be used for the current regulator that superconducting magnet discharges and recharges according to any one of claim 2-5 is described, it is characterized in that: insulated gate bipolar transistor IGBT (T1, T2, T3, T4, T5, T6, T7, T8) by gate level turn-off thyristor GTO, power field effect transistor MOSFET, other controls power electronic device or superconducting switch entirely and replaces, transformer (T) is conventional transformer or superconducting transformer, and switch (S1, S2) is solid-state switch or electric switch.
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| CNB031374603A CN100440701C (en) | 2003-06-24 | 2003-06-24 | A current regulator for charging and discharging of superconducting magnet |
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| CNB031374603A CN100440701C (en) | 2003-06-24 | 2003-06-24 | A current regulator for charging and discharging of superconducting magnet |
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| CN100571003C (en) * | 2005-06-01 | 2009-12-16 | 中国科学院电工研究所 | A kind of asymmetric formula current regulator and ambipolar control method thereof |
| CN100571005C (en) * | 2005-06-01 | 2009-12-16 | 中国科学院电工研究所 | A kind of control method that is used for charging and discharging currents of adjuster for superconducting magnet |
| CN100527560C (en) * | 2005-06-01 | 2009-08-12 | 中国科学院电工研究所 | Bridge circuit type current limiting energy storage circuit |
| CN100527582C (en) * | 2005-06-01 | 2009-08-12 | 中国科学院电工研究所 | Low temperature current regulator in use for superconductive energy storage |
| CN100527559C (en) * | 2005-06-01 | 2009-08-12 | 中国科学院电工研究所 | Line-to-line voltage compensation type current limiting energy storage circuit |
| CN100571002C (en) * | 2005-06-01 | 2009-12-16 | 中国科学院电工研究所 | A kind of asymmetric formula current regulator |
| CN100571004C (en) * | 2005-06-01 | 2009-12-16 | 中国科学院电工研究所 | A kind of control method of charging and discharging currents of adjuster for superconducting magnet |
| CN1874111B (en) * | 2005-06-01 | 2011-02-02 | 中国科学院电工研究所 | Superconductive energy storage system |
| CN100429862C (en) * | 2006-07-19 | 2008-10-29 | 中国科学院等离子体物理研究所 | Fast charging device for superconducting coil current regulating switch |
| CN101854769B (en) * | 2009-04-02 | 2012-11-28 | 华映视讯（吴江）有限公司 | Light source brightness control circuit and method |
| CN101964549A (en) * | 2010-09-08 | 2011-02-02 | 中国科学院电工研究所 | Converter for superconducting magnetic energy storage magnet to output energy |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56133802A (en) * | 1980-03-21 | 1981-10-20 | Japanese National Railways<Jnr> | Charge for superconductive magnet coil |
| JPH0417535A (en) * | 1990-05-08 | 1992-01-22 | Toshiba Corp | Superconducting power storage device |
| US5181170A (en) * | 1991-12-26 | 1993-01-19 | Wisconsin Alumni Research Foundation | High efficiency DC/DC current source converter |
-
2003
- 2003-06-24 CN CNB031374603A patent/CN100440701C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56133802A (en) * | 1980-03-21 | 1981-10-20 | Japanese National Railways<Jnr> | Charge for superconductive magnet coil |
| JPH0417535A (en) * | 1990-05-08 | 1992-01-22 | Toshiba Corp | Superconducting power storage device |
| US5181170A (en) * | 1991-12-26 | 1993-01-19 | Wisconsin Alumni Research Foundation | High efficiency DC/DC current source converter |
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