CN103594636B - 基于双tft调制的有机电致发光器件及其制备方法 - Google Patents
基于双tft调制的有机电致发光器件及其制备方法 Download PDFInfo
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- CN103594636B CN103594636B CN201310589620.9A CN201310589620A CN103594636B CN 103594636 B CN103594636 B CN 103594636B CN 201310589620 A CN201310589620 A CN 201310589620A CN 103594636 B CN103594636 B CN 103594636B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
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CN201310589620.9A CN103594636B (zh) | 2013-11-21 | 2013-11-21 | 基于双tft调制的有机电致发光器件及其制备方法 |
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CN201310589620.9A CN103594636B (zh) | 2013-11-21 | 2013-11-21 | 基于双tft调制的有机电致发光器件及其制备方法 |
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CN103594636A CN103594636A (zh) | 2014-02-19 |
CN103594636B true CN103594636B (zh) | 2017-07-25 |
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CN113130823A (zh) * | 2019-12-30 | 2021-07-16 | Tcl集团股份有限公司 | 光电器件及其制备方法 |
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JP5148211B2 (ja) * | 2007-08-30 | 2013-02-20 | 出光興産株式会社 | 有機薄膜トランジスタ及び有機薄膜発光トランジスタ |
CN102709310B (zh) * | 2012-06-11 | 2016-04-20 | 无锡格菲电子薄膜科技有限公司 | 一种柔性有机发光晶体管显示器件 |
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Non-Patent Citations (1)
Title |
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双极型有机场效应晶体管及有机发光晶体管的研制;胡永生;《中国博士学位论文全文数据库 信息科技辑》;20131015(第10期);第65—89页 * |
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CB03 | Change of inventor or designer information |
Inventor after: Guo Kunping Inventor after: Zhang Qi Inventor after: Liu Shiqi Inventor after: Li Ming Inventor after: Wei Mengjie Inventor after: Xu Tao Inventor after: Wei Bin Inventor before: Zhang Qi Inventor before: Li Ming Inventor before: Wei Mengjie Inventor before: Xu Tao Inventor before: Wei Bin |
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Effective date of registration: 20200818 Address after: No. 215200, Xingpu Industrial Park, Suzhou, Jiangsu Province Patentee after: HaoWu Electronic Technology (Suzhou) Co., Ltd Address before: 200444 Baoshan District Road, Shanghai, No. 99 Patentee before: Shanghai University |
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