CN103594597A - 一种发光器件上的叠层电极 - Google Patents
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract
本发明公开了一种发光器件上的叠层电极，其特征在于，所述叠层电极包括：反射层、阻挡层、聚结抑制层以及氧化屏蔽层。
Description
技术领域
本发明属于半导体发光器件技术领域，特别是涉及一种发光器件上的叠层电极。
背景技术
常规半导体发光器件（例如LED）包括顺序形成在蓝宝石衬底上的半导体层发光单元以及半导体发光单元上的接触电极。一般而言，接触电极普遍采用单层金属材料，通过单层金属材料与半导体接触形成欧姆接触，从而形成发光器件的电极。但是这种单层金属材料构成的接触电极的欧姆接触性能并不尽如人意。因为半导体的表面能和用于形成接触电极的金属材料（如Ag）的表面能通常彼此显著不同。由于表面能的差异，在退火期间在接触电极与半导体之间会发生聚结效应，从而在半导体和接触电极之间的界面处形成了多个空洞，这种空洞的存在降低了接触电极的反射率，使得半导体发光器件的光输出性能降低。
发明内容
为了克服现有技术中存在的缺陷，本发明提供了一种发光器件上的叠层电极，通过采用不同的材料进行堆叠，从而构成叠层结构，将此叠层结构用作半导体发光器件的接触电极，不仅可以抑制聚结效应，避免空洞的产生，而且可以进一步增强欧姆接触的性能。
本发明提出的发光器件上的叠层电极，所述叠层电极包括：反射层、阻挡层、聚结抑制层以及氧化屏蔽层。
其中，反射层为三层结构，自下而上依次为：TiO2层、Ti3O5层以及Ta2O5层，该反射层用于反射入射到其表面的光；
阻挡层由导电的透明材料形成，所述导电的透明材料选自TiN、RuO、InO、MoO和IrO中的至少一种材料；阻挡层用于阻挡反射层表面的聚结效应，防止空洞的产生；
聚结抑制层为双层结构，下层由金属铝（Al）构成，上层由铝基合金构成，其中，铝基合金为Al-Ag合金、Al-Cu合金、Al-Pd合金、Al-Rh合金、Al-Ni合金、Al-Ru合金或Al-Pt合金；
聚结抑制层用于在退火期间抑制接触电极中发生聚结效应而产生空洞；
氧化屏蔽层选自Au、Ni、Pd、Cu、Rh、Ru或Pt中的一种或两种；氧化屏蔽层用于防止聚结抑制层表面被氧化，而且还能用作叠层电极的表面保护层。
本发明的发光器件上的叠层电极的有益效果为：
1.采用反射层，将入射到电极表面的光反射回去，提高发光器件的光输出特性；
2.采用阻挡层和聚结抑制层，能够避免叠层电极中发生聚结效应，避免空洞的产生；
3.采用氧化屏蔽层，除了能够避免聚结抑制层表面被氧化以外，还能用作叠层电极表面的保护层。
附图说明
图1是本发明提出的发光器件上的叠层电极的截面结构示意图。
具体实施方式
参见图1，本发明提出的发光器件上的叠层电极，其形成在半导体发光单元上，以用作半导体发光单元的电极。所述发光器件是在蓝宝石衬底（图1中未示出）上形成半导体发光单元1，在半导体发光单元1上具有叠层电极，其中，所述叠层电极包括：反射层2、阻挡层3、聚结抑制层4以及氧化屏蔽层5。
其中，反射层2为三层结构，自下而上依次为：TiO2层21、Ti3O5层2以及Ta2O5层3，该反射层用于反射入射到其表面的光；TiO2层21、Ti3O5层2以及Ta2O5层3的厚度相同；
阻挡层3由导电的透明材料形成，所述导电的透明材料选自TiN、RuO、InO、MoO和IrO中的至少一种材料；阻挡层3用于阻挡反射层2表面的聚结效应，防止空洞的产生；
聚结抑制层4为双层结构，下层为由金属铝（Al）构成的铝层41，上层由铝基合金构成的铝基合金层2；聚结抑制层4用于在退火期间抑制接触电极中发生聚结效应而产生空洞；铝层41的厚度小于铝基合金层42的厚度，在本发明中，铝层41的厚度为铝基合金层42的厚度的1/2；
氧化屏蔽层5选自Au、Ni、Pd、Cu、Rh、Ru或Pt中的一种或两种；氧化屏蔽层5用于防止聚结抑制层表面被氧化，而且还能用作叠层电极的表面保护层。氧化屏蔽层5可以是单层结构，此时氧化屏蔽层5可由Au、Ni、Pd、Cu、Rh、Ru或Pt中的一种来形成；氧化屏蔽层5也可以是双层结构，此时，氧化屏蔽层5可由Au、Ni、Pd、Cu、Rh、Ru或Pt中的两种来形成。
至此已对本发明做了详细的说明，但前文的描述的实施例仅仅只是本发明的优选实施例，其并非用于限定本发明。本领域技术人员在不脱离本发明精神的前提下，可对本发明做任何的修改，而本发明的保护范围由所附的权利要求来限定。
Claims (3)
1.一种发光器件上的叠层电极，其特征在于，所述叠层电极包括：反射层、阻挡层、聚结抑制层以及氧化屏蔽层。
2.如权利要求1所述的发光器件上的叠层电极，其特征在于：
反射层为三层结构，自下而上依次为：TiO2层、Ti3O5层以及Ta2O5层；
阻挡层由导电的透明材料形成，所述导电的透明材料选自TiN、RuO、InO、MoO和IrO中的至少一种材料；
聚结抑制层为双层结构，下层为由金属铝（Al）构成的铝层，上层为由铝基合金构成铝基合金层，其中铝基合金为Al-Ag合金、Al-Cu合金、Al-Pd合金、Al-Rh合金、Al-Ni合金、Al-Ru合金或Al-Pt合金；
氧化屏蔽层选自Au、Ni、Pd、Cu、Rh、Ru或Pt中的一种或两种。
3.如权利要求2所述的发光器件上的叠层电极，其特征在于：
TiO2层、Ti3O5层以及Ta2O5层的厚度相同；
铝层的厚度小于铝基合金层的厚度，优选地，铝层41的厚度为铝基合金层42的厚度的1/2。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109728147A (zh) * | 2018-12-28 | 2019-05-07 | 映瑞光电科技(上海)有限公司 | Led芯片结构及其形成方法和led芯片 |
Citations (5)
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| CN1330416A (zh) * | 2000-06-30 | 2002-01-09 | 株式会社东芝 | 半导体发光元件及其制造方法以及半导体发光装置 |
| US20070246735A1 (en) * | 2006-04-03 | 2007-10-25 | Toyoda Gosei Co., Ltd. | Semiconductor light emitting element |
| CN101165928A (zh) * | 2006-10-18 | 2008-04-23 | 三星电机株式会社 | 多重反射层电极以及含有该电极的化合物半导体发光器件 |
| CN101820039A (zh) * | 2009-02-25 | 2010-09-01 | 晶发光电股份有限公司 | 发光二极管及其制造方法 |
| CN102856459A (zh) * | 2012-09-06 | 2013-01-02 | 安徽三安光电有限公司 | 发光二极管反射电极的钝化方法 |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1330416A (zh) * | 2000-06-30 | 2002-01-09 | 株式会社东芝 | 半导体发光元件及其制造方法以及半导体发光装置 |
| US20070246735A1 (en) * | 2006-04-03 | 2007-10-25 | Toyoda Gosei Co., Ltd. | Semiconductor light emitting element |
| CN101165928A (zh) * | 2006-10-18 | 2008-04-23 | 三星电机株式会社 | 多重反射层电极以及含有该电极的化合物半导体发光器件 |
| CN101820039A (zh) * | 2009-02-25 | 2010-09-01 | 晶发光电股份有限公司 | 发光二极管及其制造方法 |
| CN102856459A (zh) * | 2012-09-06 | 2013-01-02 | 安徽三安光电有限公司 | 发光二极管反射电极的钝化方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109728147A (zh) * | 2018-12-28 | 2019-05-07 | 映瑞光电科技(上海)有限公司 | Led芯片结构及其形成方法和led芯片 |
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