CN103594541B - Polycrystalline silicon/monocrystalline silicon heterojunction structure for solaode and preparation method thereof - Google Patents
Polycrystalline silicon/monocrystalline silicon heterojunction structure for solaode and preparation method thereof Download PDFInfo
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- CN103594541B CN103594541B CN201310474761.6A CN201310474761A CN103594541B CN 103594541 B CN103594541 B CN 103594541B CN 201310474761 A CN201310474761 A CN 201310474761A CN 103594541 B CN103594541 B CN 103594541B
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 54
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 229920005591 polysilicon Polymers 0.000 claims abstract description 41
- 239000012528 membrane Substances 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000009826 distribution Methods 0.000 claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 3
- 238000002425 crystallisation Methods 0.000 claims abstract description 3
- 230000008025 crystallization Effects 0.000 claims abstract description 3
- 238000007669 thermal treatment Methods 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000007740 vapor deposition Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The invention provides a kind of polycrystalline silicon/monocrystalline silicon heterojunction structure for solaode and preparation method thereof.Its structure is that polysilicon membrane that monocrystalline silicon piece last layer doping type is contrary is as emitter stage.The structure of polysilicon membrane and thickness, doping concentration distribution are all adjustable.Its preparation method is: first low temperature vapor deposition method deposits one layer of doping amorphous or microcrystalline silicon film, then rapid thermal treatment crystallization.The present invention can obtain more flexible crystal silicon solar batteries pn-junction structure and preparation method, for improving crystal silicon solar batteries device architecture and technique further, improves its conversion efficiency and provides space.
Description
Technical field
The present invention relates to structure and the preparation method of a kind of solar cell material, particularly relate to a kind of for solar-electricity
The polycrystalline silicon/monocrystalline silicon heterojunction structure in pond and preparation method thereof.
Background technology
Solar electrical energy generation is one of Land use systems of the most important renewable and clean energy resource of the mankind.Wherein crystal silicon solar electricity
Raw material sources and the technology of preparing of relative maturity that Chi Yiqi is abundant get more and more people's extensive concerning, and are the masters of solaode
Stream product category.
Crystal silicon solar batteries is the main flow classification of current solar energy power generating product, and its structure is according to opto-electronic conversion core
The constituent material similarities and differences of the heart-pn-junction are divided into homojunction structure and heterojunction structure.Homojunction structure is master in the market
Stream.Pn-junction structure and the preparation technology of homojunction crystal silicon battery are the most as described below now: crystal silicon chip is p-type, use P elements
Diffusion and subsequent process-go phosphorosilicate glass to make, diffusion layer depth about 200 ~ 300 nm.Even to this day, the development of this technology is met
Prepared by the diffusion layer having arrived bottleneck-cannot be carried out thinner thickness, and the diffusion layer doping concentration distribution formed is the most uneven.Different
Matter junction structure crystal silicon solar batteries is in developmental stage, and its Typical Representative is HIT structure and the preparation of MAT
Technique.The peak efficiency of the cell piece of the area being suitable for producing in enormous quantities of the solaode of this structure has reached
24.7%.It has a problem in that technological requirement is high, should not grasp, the monopoly position of the diffusion solar cells that fails so far to break the normal procedure.
Develop new device architecture and preparation technology, break the bottleneck of present device architecture and manufacturing technology, just can make crystalline substance
The performance of silicon solar cell improves further, and product cost declines further, accelerates the universal utilization of solaode.
Summary of the invention
It is an object of the invention to provide a kind of polycrystalline silicon/monocrystalline silicon heterojunction structure for solaode and system thereof
Preparation Method, with break through existing technique to crystal silicon solar batteries device architecture improve and the restriction of process adjustments scope, improve too
The performance of sun energy battery, reduces it and prepares difficulty, save production cost, finally obtain the solaode of more high conversion efficiency.
To achieve these goals, present invention employs following technical proposals.
A kind of polycrystalline silicon/monocrystalline silicon heterojunction structure for solaode, is characterized in that monocrystalline silicon piece is as base stage
And light absorbing zone, its side to light is make one layer of polysilicon membrane as emitter stage.Monocrystalline silicon piece and polysilicon membrane
Doping type needs contrary, i.e. if monocrystalline silicon piece is p-type, then polysilicon membrane is N-shaped；If monocrystalline silicon piece is N-shaped, the most
Polycrystal silicon film is p-type.The thickness of emitter stage is 5 ~ 1000 nm, and its doping content is programmable, i.e. can be equally distributed,
Be alternatively regular uneven distribution-Gradient distribution or patterned.
The preparation method of a kind of polycrystalline silicon/monocrystalline silicon heterojunction structure for solaode, is characterized in that first adopting
Use low temperature thin film technology of preparing, including plasma auxiliary chemical vapor deposition, hot-wire chemical gas-phase deposition, magnetron sputtering, from
The CVD methods such as sub-beam sputtering, silicon chip or the crystal silicon solar batteries that is partially completed deposit doped amorphous silicon or
Microcrystalline silicon film.Wherein: 1) conduction type and the doping content of silicon thin film can be by depositing the raw materials used classification of thin film, composition ratio
Example and thin film deposition processes parameter regulate.2) thickness of silicon thin film is regulated and controled by depositing operation and sedimentation time.3) as
Need the doping content non-uniform Distribution of polysilicon membrane, then need use mask plate or change the method acquisition of depositing operation
Required graphical style or Gradient distribution.The method using rapid thermal treatment subsequently makes non-crystalline silicon or the crystallite of preparation
Silicon thin film crystallization becomes polysilicon, and activates the doped chemical in thin film so that the bar substantially spread does not occurs in doped chemical
The polysilicon membrane of desired properties is obtained under part.Heat treatment process uses Ar, H2Carry out protecting and improve thin film matter etc. atmosphere
Amount.
The present invention compared to conventional homojunction and the preparation method of High temperature diffusion thereof, the advantage with following aspect, from
And can further improve the performance of solaode and improve technique:
1) polycrystalline silicon/monocrystalline silicon heterojunction structure is abrupt junction, has higher photoelectric response speed and conversion efficiency.
2) distribution of the thickness of polysilicon membrane, the kind of doped chemical and doping content can have the wider array of range of choice.
Minimizing device, in the resting period of high temperature, reduces the thermal process impact on device performance, and can save the energy.
Accompanying drawing explanation
Fig. 1 is the Uniform Doped polysilicon membrane/monocrystalline silicon heterojunction structural representation for solaode
Fig. 2 is doped chemical phosphorus in the Uniform Doped polysilicon membrane/monocrystalline silicon heterojunction structure of solaode
And the distribution situation of boron (B) (P).
Fig. 3 is that the polysilicon membrane/monocrystalline silicon heterojunction structure of the double-deck different levels of doping for solaode is shown
It is intended to
Fig. 4 is in the polysilicon membrane/monocrystalline silicon heterojunction structure of the double-deck different levels of doping for solaode
Doped chemical phosphorus (P) and the distribution situation of boron (B).
Fig. 5 is the polysilicon of the polysilicon membrane/low doping concentration of the graphical high-dopant concentration for solaode
Thin film/monocrystalline silicon heterojunction structural representation.
Fig. 6 is the polysilicon of the polysilicon membrane/low doping concentration of the graphical high-dopant concentration for solaode
Doped chemical phosphorus (P) and the distribution situation of boron (B) in thin film/monocrystalline silicon heterojunction structure.
In the drawings 1, the polysilicon membrane 2 of Uniform Doped, monocrystalline silicon piece 3, the polysilicon membrane 4 of high-dopant concentration, low
The polysilicon membrane 5 of doping content, the graphical polysilicon membrane of high-dopant concentration.
Detailed description of the invention
In order to make it easy to understand, the present invention is further clarified below in conjunction with preferred embodiment.
Embodiment 1
A kind of Uniform Doped polysilicon membrane/monocrystalline silicon heterojunction structure for solaode is as it is shown in figure 1, wherein
The distribution situation of doped chemical phosphorus (P) and boron (B) is as in figure 2 it is shown, this illustrates as a example by sentencing p-type silicon chip, but silicon chip is not
It is only limitted to this, it is possible to use n-type silicon chip, but emitter stage doping type, process etc. need to be adjusted.Below to this structure
And preparation method thereof carry out necessity illustration:
1) for the polysilicon membrane 1 of emitter stage Uniform Doped, the doping content of this layer is 2 × 1018 cm-3, thickness can be
Regulate between 10 ~ 500 nm, be chosen to be 100 nm herein.
2) preparation method of this layer can use following technological process, but is not limited only to this.First thin film is deposited by needing
The one side of monocrystalline silicon piece 2 carries out the cleaning of necessity；Then phosphorus (P) element using PECVD deposit thickness to be slightly thicker than 100nm is mixed
Miscellaneous concentration is 2 × 1018cm-3The polysilicon membrane 1 of Uniform Doped；Subsequently the cell piece that deposition terminates is put at Rapid Thermal
Reason equipment use Ar protect, 1100oC, the heat treatment of 20 seconds.Finally remove the natural oxidizing layer on surface.
Embodiment 2
Polysilicon membrane/monocrystalline silicon heterojunction the structure of a kind of double-deck different levels of doping for solaode such as figure
Shown in 3, wherein the distribution situation of doped chemical phosphorus (P) and boron (B) is as shown in Figure 4.This illustrates as a example by sentencing p-type silicon chip,
But silicon chip is not limited to that, it is possible to use n-type silicon chip, but emitter stage doping type, process etc. need to be adjusted.Under
In the face of this structure and preparation method thereof carries out the illustration of necessity:
1) doping content of the polysilicon membrane 3 of high-dopant concentration is 2 × 1019 cm-3, thickness can become between 3 ~ 50 nm
Change, be chosen to be 10 nm herein；The doping content of the polysilicon membrane 4 of low doping concentration is 1 × 1018cm-3, thickness can 20 ~
Change between 500 nm, be chosen to be 100 nm herein；
2) preparation method of this double-layered polycrystal silicon emitter can use following technological process, but is not limited only to this.First will
The one side depositing the monocrystalline silicon piece 2 of thin film is needed to carry out the cleaning of necessity；Then PECVD deposit thickness is used slightly thicker than
Phosphorus (P) the element doping concentration of 100nm is 1 × 1018cm-3The polysilicon membrane 4 of low doping concentration；Change impure source gas again
The ratio of body, it is 2 × 10 that deposit thickness is slightly thicker than p-doped (P) concentration of element of 10 nm19cm-3The polysilicon of high-dopant concentration
Thin film 3；Subsequently the cell piece that deposition terminates is put into and fast heat treatment device uses Ar protection, 1100oC, the heat of 20 seconds
Process.Finally remove the natural oxidizing layer on surface.
Embodiment 3
A kind of polysilicon for the polysilicon membrane/low doping concentration of the graphical high-dopant concentration of solaode is thin
Film/monocrystalline silicon heterojunction structure is as it is shown in figure 5, in wherein the distribution situation of doped chemical phosphorus (P) and boron (B) is as shown in Figure 6.This
Illustrate as a example by sentencing p-type silicon chip, but silicon chip is not limited to that, it is possible to use n-type silicon chip, but need to be to emitter stage doping class
Type, process etc. are adjusted.Below this structure and preparation method thereof is carried out necessity illustration:
1) doping content of the graphical polysilicon membrane 5 of high-dopant concentration is 2 × 1019 cm-3, thickness can be at 3 ~ 50 nm
Between change, be chosen to be 10 nm herein；The doping content of the polysilicon membrane 4 of low doping concentration is 1 × 1018 cm-3, thickness can be
Change between 20～500 nm, be chosen to be 100 nm herein；
The preparation method of the polysilicon membrane structure of the polysilicon membrane/low doping concentration of this graphical high-dopant concentration can
Use following technological process, but be not limited only to this.First the one side depositing the monocrystalline silicon piece 2 of thin film will be needed to carry out the clear of necessity
Wash；Then phosphorus (P) the element doping concentration using magnetron sputtering method deposit thickness to be slightly thicker than 100 nm is 1 × 1018 cm-3Low
The polysilicon membrane 4 of doping content；Add a cover the mask plate of stainless steel the most across the deposition surface, change doped chemical concentration not
Same target, it is 2 × 10 that deposit thickness is slightly thicker than p-doped (P) concentration of element of 10 nm19 cm-3High-dopant concentration graphical
Polysilicon membrane 5；Subsequently the cell piece that deposition terminates is put into and fast heat treatment device uses Ar protection, 1100oC, 20
The heat treatment of second.Finally remove the natural oxidizing layer of film surface.
Embodiments of the present invention are explained in detail by above-described embodiment, but can not be interpreted as the present invention is protected model
The restriction enclosed, in the ken that one skilled in the relevant art is possessed, it is also possible to without departing from present inventive concept
Under premise, various changes can be made.
Claims (4)
1., for a polycrystalline silicon/monocrystalline silicon abrupt junction heterojunction structure for solaode, it is characterized in that monocrystalline silicon piece conduct
Base stage and light absorbing zone, be to make one or more layers polysilicon membrane as emitter stage on its side to light；Described is used for too
The preparation method of the polycrystalline silicon/monocrystalline silicon abrupt junction heterojunction structure of sun energy battery, is characterized in that initially with low temperature thin film system
Preparation Method deposits doped amorphous silicon or microcrystalline silicon film on silicon chip or the crystal silicon solar batteries that is partially completed；Adopt subsequently
Make the non-crystalline silicon of preparation or microcrystalline silicon film crystallization become polysilicon by the method for rapid thermal treatment, and activate in thin film
Doped chemical so that obtain the polysilicon membrane of desired properties under conditions of doped chemical does not occurs substantially to spread；Heat treatment
During use Ar, H2 atmosphere protect.
2. according to a kind of polycrystalline silicon/monocrystalline silicon abrupt junction heterojunction structure for solaode described in claim 1,
It is characterized in that monocrystalline silicon piece needs contrary with the doping type of polysilicon membrane.
3. according to a kind of polycrystalline silicon/monocrystalline silicon abrupt junction heterojunction structure for solaode described in claim 1,
The thickness that it is characterized in that emitter stage is 5 ~ 500 nm, its doping content be uniformly distributed, Gradient distribution or the most uneven point
Cloth.
4. one kind heterogeneous according to a kind of polycrystalline silicon/monocrystalline silicon abrupt junction for solaode described in claim 1 to 3
The preparation method of junction structure, is characterized in that the graphical style needed for using the method for mask plate or change depositing operation to obtain
Or the Gradient distribution of doping content.
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| CN104505418B (en) * | 2014-11-27 | 2017-08-11 | 湖南共创光伏科技有限公司 | Compound unijunction PIN solar cells of crystal silicon and silicon Germanium films with transition zone and preparation method thereof |
| CN105405924B (en) * | 2014-11-28 | 2017-11-03 | 南昌大学 | A kind of preparation method of the high square resistance doping crystal silicon layer of crystal silica-based solar cell |
| CN105702809A (en) * | 2016-04-07 | 2016-06-22 | 南昌大学 | Method for preparing doped silicon of solar battery with low temperature vapor deposited solid diffusion source |
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