CN101740358A - Method for preparing P type poly-silicon thin film on glass substrate - Google Patents
Method for preparing P type poly-silicon thin film on glass substrate Download PDFInfo
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- CN101740358A CN101740358A CN200910241692A CN200910241692A CN101740358A CN 101740358 A CN101740358 A CN 101740358A CN 200910241692 A CN200910241692 A CN 200910241692A CN 200910241692 A CN200910241692 A CN 200910241692A CN 101740358 A CN101740358 A CN 101740358A
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Abstract
The invention discloses a method for preparing a P type poly-silicon thin film on a glass substrate, which is characterized by comprising the following steps: 1, depositing an aluminium thin film on the glass substrate by magnetron sputtering to form a sample; 2, exposing the sample in the air to make an oxidation film; 3, depositing a noncrystalline silicon thin film on the surface of the sample with the oxidation film by magnetron sputtering; and 4, annealing the sample with the noncrystalline silicon thin film through a quick heat treatment installation to complete the making of the poly-silicon thin film.
Description
Technical field
The present invention relates to a kind of method that on glass substrate, prepares polysilicon membrane.Particularly relate to a kind of method that on glass substrate, prepares P type polysilicon membrane with preferred orientation.
Background technology
Polysilicon membrane is in integrated circuit fields, field of liquid crystal display, and particularly there are very wide practical value and application prospect in the solar energy power generating field.Along with science and technology development, the technology of fabrication and processing device is faced with problems such as waste of material, material market rise in price, raw material supply on conventional silicon chip substrate.How to go up the focus that the making polysilicon membrane becomes people's research gradually at non-silicon substrate (such as glass, graphite).
The manufacturing process of polysilicon membrane mainly is divided into two steps, silicon deposited film and annealing.Main membrane deposition method has the chemical vapor deposition (CVD) method at present, and magnetically controlled sputter method.Main method for annealing has solid phase epitaxy (SPC), laser annealing (LIC), zone melting method (ZMR), rapid thermal annealing (RTA) etc. at present.
On the other hand, in order to prepare polysilicon membrane on simple glass, development in recent years has gone out the low temperature masking technique, mainly is aluminium induced crystallization (AIC) technology.Aluminium induced crystallization method mainly is meant on the low melting point substrate (such as glass) deposition of aluminum, amorphous silicon membrane successively, is being lower than the method that annealing under 577 degrees centigrade the temperature obtains polysilicon membrane then.This method can be applied to large tracts of land low temperature and prepare polysilicon membrane, and the relevant device cost is lower for above-mentioned the whole bag of tricks, the materials safety height that is adopted, pollution-free, and it is low to produce required energy consumption.
Summary of the invention
The purpose of this invention is to provide a kind of method of on the simple glass substrate, preparing P type polysilicon membrane fast with (111) preferred orientation.Mainly can be applicable to the production of polycrystalline silicon film solar cell.
The invention provides a kind of method that on glass substrate, prepares P type polysilicon membrane, it is characterized in that comprising the steps:
Step 1: on the simple glass substrate, make the aluminium film, form sample with magnetron sputtering deposition;
Step 2: sample is exposed to make oxide-film in air;
Step 3: the surface that will be manufactured with the oxide-film sample utilizes the magnetron sputtering deposition amorphous silicon membrane;
Step 4: utilize fast heat treatment device, the sample that is manufactured with amorphous silicon membrane is carried out annealing in process, finish the making of polysilicon membrane.
Wherein the thickness of aluminium film is the 300-500 nanometer.
Wherein the temperature of deposition making aluminium film is a room temperature.
The time of wherein making oxide-film is 8-12 minute.
Wherein the target material of magnetron sputtering deposition amorphous silicon membrane is the intrinsic HIGH-PURITY SILICON.
Wherein the sputtering method of magnetron sputtering is for exchanging sputter.
Wherein the thickness of amorphous silicon membrane is the 400-500 nanometer.
Wherein the device parameter of rapid thermal annealing is set to: temperature 500-650 degree centigrade, the time is 4-6 minute, the nitrogen atmosphere protection.
The present invention combines conventional aluminium induced crystallization and rapid thermal annealing and improves the parameter setting, be applicable to the unannealed sample that gets of aluminium induced crystallization by preparation, utilize rapid thermal annealing equipment that temperature is set then and under as step 4 condition, carry out sample annealing, thereby on simple glass sinks to the bottom, prepared polysilicon membrane fast with (111) preferred orientation.
The present invention has following advantage:
1, process of the present invention all can be carried out the Reasonable Parameters setting and just can be carried out on current experiments equipment, need not to carry out scrap build, has saved equipment cost.
2, the polysilicon membrane of process preparation of the present invention has (111) preferred orientation.
3, whole process of preparation is temperature required is not higher than 660 degrees centigrade, and required time is short, is easy to large-scale production, applicable to the production of simple glass as the multi-crystal silicon film solar battery of substrate, helps reducing cost.
Description of drawings
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and conjunction with figs. are described in detail below, wherein:
Fig. 1 is the method flow diagram of preparation P type polysilicon membrane on the glass substrate;
Fig. 2 is the XRD figure (aluminum that comprises on the sample of annealing back removes by conventional aluminum corrosion method) of the polysilicon membrane for preparing on the simple glass substrate.
Embodiment
See also Fig. 1 and Fig. 2, a kind of method for preparing P type polysilicon membrane on glass substrate of the present invention is characterized in that comprising the steps:
Step 1: on the simple glass substrate, make the aluminium film, form sample with the magnetically controlled DC sputtering deposition; The thickness of described aluminium film is 300-500 nanometer (present embodiment is 500 nanometers); The temperature that deposition is made the aluminium film is a room temperature; Magnetron sputtering main chamber base vacuum is 5*10
-5Pa, the argon gas atmosphere sputter, sputtering pressure 0.5Pa; In order to guarantee sample surface flatness, adopt the simple glass substrate to require the surface through mirror finish; In order to guarantee the uniformity of aluminium film thickness, substrate will slowly rotate during the sputtered aluminum film; The aluminium film surface light that obtains is as minute surface; It is silvery white seeing through glass substrate observation aluminium film;
Step 2: sample is exposed to make oxide-film in air; The time of described making oxide-film is 8-12 minute (present embodiment is 10 minutes); Need in the oxide-film manufacturing process to keep sample temperature in room temperature; Oxide-film manufacturing process preface will guarantee that sample surfaces do not receive pollution, is reentered into available nitrogen clean surface before the magnetron sputtering pretreatment chamber;
Step 3: the surface that will be manufactured with the oxide-film sample utilizes the magnetron sputtering deposition amorphous silicon membrane; The target material of described magnetron sputtering deposition amorphous silicon membrane is the intrinsic HIGH-PURITY SILICON; The sputtering method of described magnetron sputtering is for exchanging sputter; The temperature that deposition is made amorphous silicon membrane is a room temperature; The base vacuum of sputter main chamber is 5*10
-5Pa, argon gas atmosphere sputter, sputtering pressure 0.5Pa; Wherein the thickness of amorphous silicon membrane is 400-500 nanometer (present embodiment is 450 nanometers); Sample surfaces was still bright after the amorphous silicon membrane deposition was finished, and color is dark brown;
Step 4: utilize fast heat treatment device, the sample that is manufactured with amorphous silicon membrane is carried out annealing in process, finish the making of polysilicon membrane, the device parameter of described rapid thermal annealing is set to: temperature 500-650 degree centigrade (present embodiment is 600 degrees centigrade), time is 4-6 minute (present embodiment is 5 minutes), the nitrogen atmosphere protection; Temperature-fall period still kept nitrogen atmosphere to reduce to room temperature up to temperature after annealing was finished; Sample surfaces was still bright after annealing was finished, and color becomes silvery white from original dark brown; Observe from glass substrate after annealing is finished, color becomes dark brown from original silvery white.After conventional aluminium corrosion, the argenteous aluminium of sample surfaces is removed, and presents auburn silicon thin film color, and this film of X-ray diffraction test shows is the polysilicon membrane with (111) preferred orientation.
Fig. 2 provides is the XRD figure (aluminum that comprises on the sample of annealing back removes by conventional aluminum corrosion method) of the polysilicon membrane for preparing on the simple glass substrate.
The above record only for utilizing the embodiment of the technology of the present invention content, anyly is familiar with modification, the variation that this operator uses the present invention to do, and all belongs to the claim scope that the present invention advocates, and is not limited to the content that embodiment discloses.
Claims (8)
1. a method for preparing P type polysilicon membrane on glass substrate is characterized in that comprising the steps:
Step 1: on the simple glass substrate, make the aluminium film, form sample with magnetron sputtering deposition;
Step 2: sample is exposed to make oxide-film in air;
Step 3: the surface that will be manufactured with the oxide-film sample utilizes the magnetron sputtering deposition amorphous silicon membrane;
Step 4: utilize fast heat treatment device, the sample that is manufactured with amorphous silicon membrane is carried out annealing in process, finish the making of polysilicon membrane.
2. the method for preparing P type polysilicon membrane on glass substrate according to claim 1, wherein the thickness of aluminium film is the 300-500 nanometer.
3. the method for preparing P type polysilicon membrane on glass substrate according to claim 1 and 2, wherein the temperature of deposition making aluminium film is a room temperature.
4. the method for preparing P type polysilicon membrane on glass substrate according to claim 1, the time of wherein making oxide-film is 8-12 minute.
5. the method for preparing P type polysilicon membrane on glass substrate according to claim 1, wherein the target material of magnetron sputtering deposition amorphous silicon membrane is the intrinsic HIGH-PURITY SILICON.
6. the method for preparing P type polysilicon membrane according to claim 1 or 5 on glass substrate, wherein the sputtering method of magnetron sputtering is for exchanging sputter.
7. the method for preparing P type polysilicon membrane according to claim 1 or 5 on glass substrate, wherein the thickness of amorphous silicon membrane is the 400-500 nanometer.
8. the method for preparing P type polysilicon membrane on glass substrate according to claim 1, wherein the device parameter of rapid thermal annealing is set to: temperature 500-650 degree centigrade, the time is 4-6 minute, the nitrogen atmosphere protection.
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102002673A (en) * | 2010-09-17 | 2011-04-06 | 陕西师范大学 | Preparation method of nanocrystalline silicon-aluminum oxide/silicon oxide thermoelectric film material |
| CN103199151A (en) * | 2013-03-07 | 2013-07-10 | 宁波大学 | Preparation method of polycrystalline silicon thin film based on metal inducement |
| CN103215547A (en) * | 2013-03-06 | 2013-07-24 | 中山大学 | Method for preparing the polysilicon film |
| CN103227239A (en) * | 2013-04-02 | 2013-07-31 | 上海大学 | Method for dry-etching two-step aluminium-induced crystallization of amorphous silicon membrane |
| CN103426974A (en) * | 2012-05-21 | 2013-12-04 | 光洋应用材料科技股份有限公司 | Substrate with p-type amorphous silicon and transparent conductive oxide film and preparation method |
| CN103594541A (en) * | 2013-10-12 | 2014-02-19 | 南昌大学 | Polycrystalline silicon/monocrystalline silicon heterojunction structure applied to solar cell and preparation method thereof |
| CN105506734A (en) * | 2015-12-18 | 2016-04-20 | 浙江师范大学 | Polycrystalline silicon film and low-temperature preparation method thereof |
| CN105977136A (en) * | 2016-05-27 | 2016-09-28 | 清华大学 | Semiconductor structure and method for preparing the same |
| CN106206840A (en) * | 2016-07-15 | 2016-12-07 | 华北电力大学 | A kind of preparation method of graphite substrate concentration gradient p-type polysilicon thin film |
| CN109411555A (en) * | 2018-09-20 | 2019-03-01 | 广州腾岛绿电力技术开发有限公司 | A kind of amorphous annealed silicon solar panel |
-
2009
- 2009-12-02 CN CN200910241692A patent/CN101740358A/en active Pending
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102002673A (en) * | 2010-09-17 | 2011-04-06 | 陕西师范大学 | Preparation method of nanocrystalline silicon-aluminum oxide/silicon oxide thermoelectric film material |
| CN102002673B (en) * | 2010-09-17 | 2011-10-26 | 陕西师范大学 | Preparation method of nanocrystalline silicon-aluminum oxide/silicon oxide thermoelectric film material |
| CN103426974A (en) * | 2012-05-21 | 2013-12-04 | 光洋应用材料科技股份有限公司 | Substrate with p-type amorphous silicon and transparent conductive oxide film and preparation method |
| CN103215547A (en) * | 2013-03-06 | 2013-07-24 | 中山大学 | Method for preparing the polysilicon film |
| CN103199151A (en) * | 2013-03-07 | 2013-07-10 | 宁波大学 | Preparation method of polycrystalline silicon thin film based on metal inducement |
| CN103227239A (en) * | 2013-04-02 | 2013-07-31 | 上海大学 | Method for dry-etching two-step aluminium-induced crystallization of amorphous silicon membrane |
| CN103594541A (en) * | 2013-10-12 | 2014-02-19 | 南昌大学 | Polycrystalline silicon/monocrystalline silicon heterojunction structure applied to solar cell and preparation method thereof |
| CN103594541B (en) * | 2013-10-12 | 2017-01-04 | 南昌大学 | Polycrystalline silicon/monocrystalline silicon heterojunction structure for solaode and preparation method thereof |
| CN105506734A (en) * | 2015-12-18 | 2016-04-20 | 浙江师范大学 | Polycrystalline silicon film and low-temperature preparation method thereof |
| CN105977136A (en) * | 2016-05-27 | 2016-09-28 | 清华大学 | Semiconductor structure and method for preparing the same |
| CN106206840A (en) * | 2016-07-15 | 2016-12-07 | 华北电力大学 | A kind of preparation method of graphite substrate concentration gradient p-type polysilicon thin film |
| CN109411555A (en) * | 2018-09-20 | 2019-03-01 | 广州腾岛绿电力技术开发有限公司 | A kind of amorphous annealed silicon solar panel |
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Open date: 20100616 |