CN103594462A - LED integration packaging structure and packaging method thereof - Google Patents
LED integration packaging structure and packaging method thereof Download PDFInfo
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- CN103594462A CN103594462A CN201310546574.4A CN201310546574A CN103594462A CN 103594462 A CN103594462 A CN 103594462A CN 201310546574 A CN201310546574 A CN 201310546574A CN 103594462 A CN103594462 A CN 103594462A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
- H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
- H01L2224/241—Disposition
- H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/24137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Abstract
The invention discloses an LED integration packaging structure which comprises a base, at least one LED chip, insulation layers and at least two connecting electrodes. The LED chips are fixedly connected on the base, and each LED chip is provided with a positive electrode and a negative electrode. The insulation layers are laid on the surface of the base and the surfaces of the LED chips, and the surfaces of the positive electrodes and the surfaces of the negative electrodes of the LED chips are exposed out of the insulation layers. The connecting electrodes are arranged on the base and the LED chips. In addition, an LED integration packaging method is disclosed. Compared with the prior art, the LED integration packaging structure and the packaging method of the LED integration packaging structure have the advantages of being high in integration degree, strong in reliability and low in cost and having diversified functions.
Description
Technical field
The present invention relates to a kind of LED integration packaging technology, particularly a kind of LED integrated encapsulation structure and method for packing thereof.
Background technology
Along with society day by day strengthens energy-conservation popularization and is tending towards general, LED product is widely used by enterprise and family, and the every field of the illumination and decoration that is widely used.And in order to form outstanding LED product, LED integration packaging is a very important step in its production process.
Rely on current LED integration packaging technology, for the encapsulation of chip and substrate, substantially still according to traditional method for packing and structure, carry out.It is that chip is fixed on substrate substantially, then connects chip and substrate by wiring technique (connecing gold thread).The shortcoming of current this LED integration packaging technology is: only can realize the encapsulation of single mesa devices, encapsulation when can not form a plurality of mesa devices; The gold thread of wiring technique is in use easily damaged, and the reliability of encapsulation is not good; Material cost and process costs based on connecing gold thread technique, the material cost of current encapsulation technology and process costs are all higher; Structure based on substrate, chip and gold thread, the circuit of formation is fairly simple, so its function that can provide is also comparatively single.
Summary of the invention
Object of the present invention is exactly for the problems referred to above, provides that a kind of integrated level is high, reliability is strong, cost is low and LED integrated encapsulation structure and the method for packing thereof of functional diversities.
To achieve these goals, the invention provides following technical scheme: LED integrated encapsulation structure, it comprises:
Base;
At least one LED chip, it is fixedly connected on above-mentioned base, and this LED chip has positive and negative electrode;
Insulating barrier, it is laid in the surface of above-mentioned base and LED chip, and wherein, this insulating barrier is exposed on the surface of the positive and negative electrode of above-mentioned LED chip;
At least two connecting electrodes, it is arranged on above-mentioned base and LED chip.
Preferably, along being provided with limitation in height ring on the edge of above-mentioned base, above-mentioned LED chip is positioned at this limitation in height ring.
Preferably, on above-mentioned connecting electrode, be carved with graphics chip.
LED integrated encapsulation method, it comprises the following steps:
1) LED chip with positive and negative electrode is fixed on base;
2) filler is coated on to the surface of above-mentioned LED chip and base;
3) the above-mentioned filler of part of skimming in above-mentioned LED chip and susceptor surface by dull and stereotyped glossing, until expose the surface of the positive and negative electrode of this LED chip, and form the plane that covers this LED chip and susceptor surface;
4) by semiconductor technology, connecting electrode is installed on above-mentioned LED chip and base.
Preferably, above-mentioned LED integrated encapsulation method is also included in above-mentioned steps 4) photoetching process of passing through of carrying out before makes the step of electrode pattern on above-mentioned connecting electrode.
Preferably, above-mentioned LED integrated encapsulation method is also included in above-mentioned steps 1) carry out before the step of limitation in height ring is set on the edge of above-mentioned base, above-mentioned LED chip is positioned at this limitation in height ring.
Adopt the beneficial effect of above technical scheme to be:
(1) LED integrated encapsulation structure of the present invention on the surface of LED chip and base, tile on an insulating barrier, make the surface of LED chip and base form a plane, then by connecting electrode, connect base and LED chip; It compared with prior art, there is advantage: by including the structure of LED chip, base, insulating barrier and connecting electrode, and by formed plane, not only can realize the encapsulation of single mesa devices, the integration packaging that can also realize a plurality of mesa devices, integrated level is high; By connecting electrode, replace original gold thread that connects, reliability is stronger; Connecting electrode is set, and than adopting gold thread, material cost and process costs have all obtained reduction; Form plane and connecting electrode is set, for the follow-up circuit of making provides condition, follow-uply can the more complicated circuit design such as control circuit be set as required thereon thereon, making the function of this LED integrated encapsulation structure more be tending towards variation; In addition, the encapsulation of double-side structure can also be more easily realized on the surface of smooth connecting electrode;
(2) LED integrated encapsulation method of the present invention mainly forms plane by filler and dull and stereotyped glossing on the surface of LED chip and base, and then connects LED chip and base by connecting electrode; It compared with prior art, there is advantage: by LED chip, base and connecting electrode are set, and by the formed plane of coating filler, not only can realize the encapsulation of single mesa devices, the integration packaging that can also realize a plurality of mesa devices, integrated level is high; By connecting electrode, replace original gold thread that connects, reliability is stronger; Connecting electrode is set, and than adopting gold thread, material cost and process costs have all obtained reduction; Form plane and connecting electrode is set, for the follow-up circuit of making provides condition, follow-uply can the more complicated circuit design such as control circuit be set as required thereon thereon, making the function of this LED integrated encapsulation structure more be tending towards variation; In addition, the encapsulation of double-side structure can also be more easily realized on the surface of smooth connecting electrode.
Accompanying drawing explanation
Fig. 1 is the structural representation under a kind of execution mode of LED integrated encapsulation structure of the present invention.
Fig. 2 is the structural representation under the another kind of execution mode of LED integrated encapsulation structure of the present invention.
Fig. 3 A-3D is the implementation step schematic diagram of LED integrated encapsulation method of the present invention.
Wherein, 1. base 11. limitation in height ring 2.LED chip 21. positive electrode 22. negative electrode 3. insulating barrier 4. connecting electrodes.
Embodiment
Below in conjunction with accompanying drawing, describe the preferred embodiment of the present invention in detail.
As shown in Figure 1, in the first and optimum execution mode of LED integrated encapsulation structure of the present invention, this structure comprises: base 1; Three LED chips 2, it is fixedly connected on base 1, and this LED chip 2 has positive and negative electrode 21,22; Insulating barrier 3, it is laid in the surface of base 1 and LED chip 2, wherein, this insulating barrier 3 is exposed on the surface of positive and negative electrode 21,22, be that insulating barrier 3 joint bases 1 and LED chip 2 form a smooth plane, but expose positive and negative electrode 21,22, so that the installation of follow-up connecting electrode 4; Four connecting electrodes 4, it is arranged on base 1 and LED chip 2.Wherein, insulating barrier 3 can be phosphorosilicate glass
,the material that epoxy molding plastic and transparent resin etc. possess the features such as insulation, printing opacity forms, and by these materials, also makes insulating barrier 3 possess effect reflective, optically focused, thereby reduces light loss; Connecting electrode 4 can be arranged on base 1 and LED chip 2 by semiconductor technologies such as evaporation technology, sputtering technologies.This structure is by including the structure of LED chip 2, base 1, insulating barrier 3 and connecting electrode 4, and by formed plane, not only can realize the encapsulation of single mesa devices, can also realize the integration packaging of a plurality of mesa devices, and integrated level is high; By connecting electrode 4, replace original gold thread that connects, reliability is stronger; Connecting electrode 4 is set, and than adopting gold thread, material cost and process costs have all obtained reduction; Form plane and connecting electrode 4 is set, for the follow-up circuit of making provides condition, follow-uply can the more complicated circuit design such as control circuit be set as required thereon thereon, making the function of this LED integrated encapsulation structure more be tending towards variation; In addition, the encapsulation of double-side structure can also be more easily realized on the surface of smooth connecting electrode 4.
As shown in Figure 2, in the second execution mode of LED integrated encapsulation structure of the present invention, this structure comprises: base 1; A LED chip 2, it is fixedly connected on base 1, and this LED chip 2 has positive and negative electrode 21,22; Insulating barrier 3, it is laid in the surface of base 1 and LED chip 2, wherein, this insulating barrier 3 is exposed on the surface of positive and negative electrode 21,22, be that insulating barrier 3 joint bases 1 and LED chip 2 form a smooth plane, but expose positive and negative electrode 21,22, so that the installation of follow-up connecting electrode 4; Two connecting electrodes 4, it is arranged on base 1 and LED chip 2.Present embodiment can substitute above-mentioned first kind of way and implement, and is applicable in the situation of single mesa devices encapsulation, and its obtained advantage is same as first kind of way.
As depicted in figs. 1 and 2, in the third execution mode of LED integrated encapsulation structure of the present invention, the first based on above-mentioned or the second execution mode, along being provided with limitation in height ring 11 on the edge of above-mentioned base 1, above-mentioned LED chip 2 is positioned at this limitation in height ring 11.In order to guarantee fastness, limitation in height ring 11 generally can be one-body molded with base 1, and height and evenness that limitation in height ring 11 can guarantee insulating barrier 3 are set.
In the 4th kind of execution mode of LED integrated encapsulation structure of the present invention, the first based on above-mentioned, the second or the third execution mode, on above-mentioned connecting electrode, can also be carved with graphics chip (not shown), it can be specifically to carry out photoetching by silicon technologies such as photoetching processes, the connecting electrode that is carved with graphics chip can be so that can form on connecting electrode and realize multi-purpose circuit design, and electrode pattern can be drawn as required.
As shown in Fig. 3 A-3D, in the first and optimum execution mode of LED integrated encapsulation method of the present invention, the method comprises the following steps: 1) LED chip 2 with positive and negative electrode 21,22 is fixed on base 1, the effect after completing as shown in Figure 3A; 2) filler 5 is coated on to the surface of LED chip 2 and base 1, the effect after completing as shown in Figure 3 B; 3) by dull and stereotyped glossing skim LED chip 2 and the lip-deep partially filled agent 5 of base 1, until expose the surface of positive and negative electrode 21,22, and form the plane that covers LED chip 2 and base 1 surface, the effect after completing is as shown in Figure 3 C; 4) by semiconductor technology, connecting electrode 4 is installed on LED chip 2 and base 1, the effect after completing as shown in Figure 3 D.Wherein, base 1 can be to make by heat sink materials such as metal (copper, aluminium etc.), pottery or plastics, and it can obtain less resistive properties than existing metal circuit board, certainly also can directly adopt wiring board according to application demand; The mode that LED chip 2 can specifically bond by alloy technique or employing heat-conducting glue is fixed on base 1, and 5 of fillers are to adopt phosphorosilicate glass
,epoxy molding plastic and transparent resin etc. possess the material of the features such as insulation, printing opacity and easy polishing to be made, and also makes insulating barrier 3 possess effect reflective, optically focused, thereby reduce light loss by these materials; Semiconductor technology can be specifically to adopt evaporation technology and sputtering technology etc., and semiconductor technology and dull and stereotyped glossing etc. is all can specifically to know in prior art, and in this not go into detail.
In the second execution mode of LED integrated encapsulation method of the present invention, the first execution mode based on above-mentioned, the method can also be included in above-mentioned steps 4) carry out before pass through the step that photoetching process is made electrode pattern (not shown) on connecting electrode, it can be specifically to carry out photoetching by silicon technologies such as photoetching processes, the connecting electrode that is carved with graphics chip can be so that can form on connecting electrode and realize multi-purpose circuit design, and electrode pattern can be drawn as required.
As shown in Figure 3A, in the third execution mode of LED integrated encapsulation method of the present invention, the first based on above-mentioned or the second execution mode, the method can also be included in above-mentioned steps 1) carry out before the step of limitation in height ring 11 is set on the edge of base 1, LED chip 2 is positioned at this limitation in height ring 11.In order to guarantee fastness, limitation in height ring 11 generally can be one-body molded with base 1, limitation in height ring 11 is set can provide the reference of height in the polishing process that carries out filler 5, makes the filler 5 that polishing completes can obtain satisfied height and evenness.
Above-described is only the preferred embodiment of the present invention, it should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise of the invention, can also make some distortion and improvement, and these all belong to protection scope of the present invention.
Claims (6)
1. LED integrated encapsulation structure, is characterized in that: comprising:
Base;
At least one LED chip, it is fixedly connected on described base, and described LED chip has positive and negative electrode;
Insulating barrier, it is laid in the surface of described base and LED chip, and wherein, described insulating barrier is exposed on the surface of the positive and negative electrode of described LED chip;
At least two connecting electrodes, it is arranged on described base and LED chip.
2. LED integrated encapsulation structure according to claim 1, is characterized in that: along being provided with limitation in height ring on the edge of described base, described LED chip is positioned at described limitation in height ring.
3. LED integrated encapsulation structure according to claim 1, is characterized in that: on described connecting electrode, be carved with graphics chip.
4. LED integrated encapsulation method, is characterized in that: comprise the following steps:
1) LED chip with positive and negative electrode is fixed on base;
2) filler is coated on to the surface of described LED chip and base;
3) the described filler of part of skimming in described LED chip and susceptor surface by dull and stereotyped glossing, until expose the surface of the positive and negative electrode of described LED chip, and form the plane that covers described LED chip and susceptor surface;
4) by semiconductor technology, connecting electrode is installed on described LED chip and base.
5. LED integrated encapsulation method according to claim 1, is characterized in that: be also included in the photoetching process of passing through of carrying out before described step 4) and on described connecting electrode, make the step of electrode pattern.
6. LED integrated encapsulation method according to claim 1, is characterized in that: be also included in carry out before described step 1) the step of limitation in height ring is set on the edge of described base, described LED chip is positioned at described limitation in height ring.
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| CN201310546574.4A CN103594462A (en) | 2013-11-07 | 2013-11-07 | LED integration packaging structure and packaging method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310546574.4A CN103594462A (en) | 2013-11-07 | 2013-11-07 | LED integration packaging structure and packaging method thereof |
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| CN103594462A true CN103594462A (en) | 2014-02-19 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4936808A (en) * | 1988-12-12 | 1990-06-26 | Samsung Electronics Co., Ltd. | Method of making an LED array head |
| WO2008153245A2 (en) * | 2007-06-11 | 2008-12-18 | Wavenics, Inc. | Semiconductor package module using anodized oxide layer and manufacturing method thereof |
| CN102244018A (en) * | 2010-05-14 | 2011-11-16 | 深南电路有限公司 | Manufacturing method of chip embedded type printed circuit board |
| US20120056229A1 (en) * | 2010-09-08 | 2012-03-08 | Epistar Corporation | Light emitting structure and manufacturing method thereof |
| CN103208574A (en) * | 2012-01-13 | 2013-07-17 | 重庆四联光电科技有限公司 | Light emitting diode (LED) packaging structure |
| CN203562423U (en) * | 2013-11-07 | 2014-04-23 | 昆山开威电子有限公司 | LED integrated packaging structure |
-
2013
- 2013-11-07 CN CN201310546574.4A patent/CN103594462A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4936808A (en) * | 1988-12-12 | 1990-06-26 | Samsung Electronics Co., Ltd. | Method of making an LED array head |
| WO2008153245A2 (en) * | 2007-06-11 | 2008-12-18 | Wavenics, Inc. | Semiconductor package module using anodized oxide layer and manufacturing method thereof |
| CN102244018A (en) * | 2010-05-14 | 2011-11-16 | 深南电路有限公司 | Manufacturing method of chip embedded type printed circuit board |
| US20120056229A1 (en) * | 2010-09-08 | 2012-03-08 | Epistar Corporation | Light emitting structure and manufacturing method thereof |
| CN103208574A (en) * | 2012-01-13 | 2013-07-17 | 重庆四联光电科技有限公司 | Light emitting diode (LED) packaging structure |
| CN203562423U (en) * | 2013-11-07 | 2014-04-23 | 昆山开威电子有限公司 | LED integrated packaging structure |
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Application publication date: 20140219 |
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