CN103592284A - Online real-time representation device for film epitaxial growth - Google Patents
Online real-time representation device for film epitaxial growth Download PDFInfo
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Abstract
The invention discloses an online real-time representation device for film epitaxial growth. The online real-time representation device utilizes Raman spectroscopy signals to directly represent the microstructure of a nano material in MOCVD (Metal Organic Chemical Vapour Deposition) equipment in real time during a film epitaxial growth process. After reflected by a first spectroscope, excitation light is focused by a plane-convex lens, and the focus is radiated to an epitaxial wafer through an observing window in the top of the reaction cavity of the MOCVD equipment; since the Raman spectroscopy signals are excited in the radiation area of the focus of the plane-convex lens, most Raman spectroscopy signals are collected by the plane-convex lens; after passing through the first spectroscope, the Raman spectroscopy signals gather in the focus of the plane-convex lens, at the moment, a confocal pinhole is formed in the focus, and performs the function of space filtering and stray light resisting. The excitation light and the detection light (namely the Raman spectroscopy signals) share a light path front end unit, the size of a probe can be reduced as far as possible, and space limitation of the observing window of the reaction chamber is broken.
Description
Technical field
The invention belongs to on-line monitoring technique field, more specifically say, relate to a kind of online real-time characterization device for thin film epitaxial growth in MOCVD equipment.
Background technology
Metal organic chemical vapor deposition (MOCVD, Metal Organic Chemical Vapour Deposition) method is because technology maturation, epitaxial growth quality are good, in the growth of nano material, more and more extensively quoted, instrument is especially absolutely necessary in GaN base LED heteroepitaxial growth.
MOCVD utilizes metal organic compound (MO) and hydride, by carry out cracking, the chemical reaction such as synthetic in pyroreaction chamber, carries out thin film epitaxial growth with gas phase form on epitaxial wafer.
The structure of growing along with MOCVD epitaxial material becomes increasingly complex, in growth, require component, atomic layer level thickness and the quality of forming film of control more and more higher, the variation of various physical property in on-line real time monitoring material deposition process in MOCVD system, can disclose the mutual relationship of growth rate, quality of materials, surface atom reconstruct etc., thereby the convenient growth parameter(s) of adjusting, implementation structure growth optimization, makes the growth of high performance thin film have repeatability precision.Therefore, membraneous material growth on-line monitoring has become the pith of MOCVD system.
Yet due to the singularity of MOCVD technology, greatly limited the application of various characterization techniques in on-line monitoring.
1, in reaction environment, be full of the reacting gas of various components, various concentration, just greatly limited the characterization technique with the work of electron emission mode, as refletcion high-energy electron diffraction (RHEED), scanning electron microscope (SEM) etc.
2, space, measured response chamber and atwirl substrate base, all limited to become and plunderred angle sweep or become X-ray diffraction spectrum (XRD) technology that length scanning mode is carried out work.
At present, the thin film epitaxial growth on-line monitoring in MOCVD, has following a few monitoring method:
1, growth temperature monitoring
The measuring principle of growth temperature is first, to adopt kampometer to measure in object thermal radiation optical spectrum, the infrared light intensity that wavelength is 950nm; Then, with the incident of identical 950nm wavelength infrared light, measure the absorptivity of film to this wavelength light, according to kirchhoff thermal radiation law, in film thermal radiation, the emissivity of 950nm wavelength infrared light should equate with surveyed absorptivity, by twice measurement result, the temperature of film is revised, obtained temperature more accurately.Yet in MOCVD, the influence factor of film growth quality is more, as the stability of gas flow, doping content, the speed of growth, temperature control precision etc., online growth temperature is measured and is just controlled one of important indicator of film growth quality.
2, reflection anisotropic spectral
Reflection anisotropic spectral (RAS), also referred to as Reflectance difference spectroscopy (RDS), its principle is that to utilize the different polarization component reflection of light to liken to poor, the isotropy signal that cancellation body produces mutually, can reflect sensitively that sample is in the plane perpendicular to the incident light direction of propagation, the nuance of the amplitude reflectance in two orthogonal directions, i.e. Study on In-Plane Optical Anisotropy.
RAS is mainly for cubic system semiconductor (as II-VI Zu, III-V family semiconductor material), although cubic system material is isotropic in theory, in thin film epitaxy process, due to surface reconstruction and relaxation, by the surperficial asymmetry causing.Therefore utilize RAS can reflect very sensitively the anisotropy information of cubic system semiconductor surface reconstruct, and can further analyze the growth quality of epitaxial surface, for example, quantum well interface quality.But RAS, just to outermost information sensing, therefore, in current MOCVD on-line real time monitoring, is seldom used this technology.
3, the reflectance spectrum based on Fabry-Perot interference oscillation
It is multiple reflections, the refraction producing between epi-layer surface, film epitaxial layer inside, substrate interface three based on fixed wave length incident light that Fabry-Perot interferes, total reflective light intensity is these beam combinations that finally reflect from epi-layer surface, owing to having phase differential between each light beam, by the variation along with epitaxy layer thickness, there is periodic swinging reflectance spectrum in intensity of reflected light.
Growth rate, film thickness information in reflectance spectrum, have not only been comprised, and refractive index, absorptivity, the surface quality information that from the amplitude of reflectance spectrum curve and variation tendency thereof, can extract, so characteristic parameter of epitaxial loayer, as component, stress, surface state, ooze assorted concentration change etc., can set up under the optical model prerequisite of respective material, thereby obtain by measuring the variation indirect calculation of reflectance spectrum.But owing to being the information of indirectly obtaining, certainly exist larger error and uncertainty.
4, epi-layer surface angularity
As shown in Figure 2, two bundles (or more than two bundles) parallel laser direct irradiation, on epitaxial wafer surface, changes and just can extrapolate the surface curvature of epitaxial wafer according to the spacing of flare the measuring principle of epi-layer surface curvature.It is that grating constant and thermal expansivity by epitaxially deposited layer do not mate and cause that epitaxial wafer produces bending, by online surface curvature, measure, forming process that can be to doping induced stress, and the mechanism that doping level counter stress is loose and dislocation is buried in oblivion is studied.
Although the on-line measurement of epi-layer surface angularity can reflect in real time the stress of epitaxially deposited layer and form and change procedure, but the basic reason that angularity changes is to cause what dislocation caused by grating constant and coefficient of thermal expansion mismatch, online surface warp degree measurement belongs to by macroscopic appearance infers microscopic feature, equally also has error and uncertainty.
In sum, also do not have at present technology or product can in MOCVD, in real time, directly characterize the characteristics such as nano material micromechanism, crystal situation, doping component and concentration.Existing on-line monitoring technique takes out reaction chamber after all can only Material growth completing, and utilizes conventional off-line characterization technique, as SEM, XRD, transmission electron microscope (TEM), atomic force microscope (AFM), Raman spectrum etc. verifys and calibrate.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, the online real-time characterization device of thin film epitaxial growth in a kind of MOCVD equipment is provided, to realize in real time, directly to characterize the epitaxially grown characteristic of nano material film.
For achieving the above object, the online real-time characterization device of thin film epitaxial growth of the present invention, is characterized in that, comprises light source, probe and Fourier transform spectrometer;
Described probe comprises the first spectroscope, plano-convex lens, the first condenser lens, confocal pinhole, the first collimation lens and the second condenser lens; Light source send monochromatic exciting light by the first spectroscope reflection after, by plano-convex lens, focused on, by the watch window at MOCVD reaction chamber top, focus point is radiated on epitaxial wafer; The raman spectral signal that epitaxial wafer focus point irradiation area is excited is collected by plano-convex lens and is passed through after the first spectroscope transmission, through the first condenser lens, converge, at the focus place of the first condenser lens, it is confocal pinhole, the raman spectral signal being excited through confocal pinhole after spatial filtering suppresses parasitic light, through the first accurate collimation lens, become directional light and the second condenser lens and focus on and enter the first fiber coupler, then through Optical Fiber Transmission to Fourier transform spectrometer;
Fourier transform spectrometer, launches the luminance spectrum of the raman spectral signal of reception in time domain, then has Fourier transform that time domain luminance spectrum is transformed to the spectrum in spatial domain dispersion, extracts spectrum.
The object of the present invention is achieved like this:
Raman spectrum is when monochromatic light is during by material scattering, not only has the spectral line (Rayleigh scattering light) with incident light same frequency in scattered light, also exists frequency to only have 10 of Rayleigh intensity to positive negative direction generation same displacement and intensity
-3～10
-6spectral line.Raman frequency shift is relevant with the rotation and vibration energy level of material molecule, utilizes Raman spectrum to carry out analysis of the molecular structure, key state signature analysis and Qualitative Identification etc. to nano material and characterizes.The online real-time characterization device of thin film epitaxial growth of the present invention utilizes raman spectral signal that the nano material micromechanism in thin film epitaxial growth process in MOCVD equipment is carried out in real time, directly characterized, and for the singularity of MOCVD technique and reaction chamber structure, adopt exciting light and spectrum investigating system reflection-type confocal, spectral signal is collected in monoplane.Exciting light is focused on by plano-convex lens after being reflected by the first spectroscope, by the watch window at MOCVD reaction chamber top, focus point is radiated on epitaxial wafer; The raman spectral signal that focus point irradiation area is excited is owing to being focus point at plano-convex lens, therefore most raman spectral signals are collected by plano-convex lens, after the first spectroscope, converge in the focus of condenser lens, now there is a confocal pinhole at this focus place, plays the effect of spatial filtering, inhibition parasitic light.Like this, owing to adopting in reflection-type confocal system, exciting light shares with the light path front end unit that detection light is raman spectral signal, can dwindle as much as possible probe size, overcomes the space constraint of reaction chamber watch window.In addition, not only the parasitic light beyond focal zone can be suppressed well, and the raman spectral signal of focal zone will be collected efficiently, thereby greatly improves signal to noise ratio (S/N ratio).
Accompanying drawing explanation
Fig. 1 is MOCVD growing principle schematic diagram;
Fig. 2 is surface curvature measuring principle schematic diagram;
Fig. 3 is a kind of embodiment schematic diagram of the online real-time characterization device of thin film epitaxial growth of the present invention;
Fig. 4 is the another kind of embodiment schematic diagram of the online real-time characterization device of thin film epitaxial growth of the present invention;
Fig. 5 is epitaxial wafer positional information prognostic chart;
Fig. 6 is Michelson interferometer schematic diagram;
Fig. 7 is the graph of a relation of optical path difference and epitaxial wafer position;
Fig. 8 is the graph of a relation that optical path difference and graphite slide glass dish rotate;
Fig. 9 is the graph of a relation of optical path difference and graphite slide glass dish slow rotation;
Figure 10 is the another kind of embodiment schematic diagram of the online real-time characterization device of thin film epitaxial growth of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described, so that those skilled in the art understands the present invention better.Requiring particular attention is that, in the following description, when perhaps the detailed description of known function and design can desalinate main contents of the present invention, these are described in here and will be left in the basket.
In the present embodiment, as shown in Figure 3, for achieving the above object, the online real-time characterization device of thin film epitaxial growth of the present invention, comprises probe 2, light source 3 and Michelson interferometer 4;
Described probe 2 comprises the first spectroscope 201, plano-convex lens 202, the first condenser lens 203, the accurate collimation lens 205 of confocal pinhole 204, first and the second condenser lens 206; Light source 3 sends monochromatic exciting light and enters probe 2, then from straight lens 208, becomes directional light through fiber coupler 209, after the first spectroscope 201 reflections, by plano-convex lens 202, focused on, by the watch window 104 at MOCVD reaction chamber 1 top, focus point is radiated on epitaxial wafer 102; The raman spectral signal that epitaxial wafer focus point irradiation area is excited is collected by plano-convex lens 202 and is passed through after the first spectroscope 201 transmissions, through the first condenser lens 203, converge, at the focus place of the first condenser lens 203, it is confocal pinhole 204, the raman spectral signal being excited through confocal pinhole 204 after spatial filtering suppresses parasitic light, through the first collimation lens 205, become directional light and the second condenser lens 206 and focus on and enter the first fiber coupler 207, then through Optical Fiber Transmission to Fourier transform spectrometer, 3.Wherein, watch window 104 is positioned on spray head 103, and epitaxial wafer 102 is positioned on graphite slide glass dish 101.
Fourier transform spectrometer, 3 launches the luminance spectrum of the raman spectral signal of reception in time domain, then has Fourier transform that time domain luminance spectrum is transformed to the spectrum in spatial domain dispersion, extracts spectrum.
As shown in Figure 3, owing to adopting in reflection-type confocal system, exciting light shares with the light path front end unit that detection light is raman spectral signal, can dwindle as much as possible probe 2 volumes, overcomes the space constraint of MOCVD reaction chamber 1 watch window.In addition, not only the parasitic light beyond focal zone can be suppressed well, and the raman spectral signal of focal zone will be collected efficiently, thereby greatly improves signal to noise ratio (S/N ratio).
In the present embodiment, on the basis of embodiment 1, further improve, make it can carry out obtaining online of reflectance spectrum and thermal radiation optical spectrum, in folded light beam, comprised a large amount of epitaxial wafer growth signals: the reflectance spectrum of reflection surface atom reconstruction quality, epitaxy layer thickness, the thermal radiation optical spectrum of reflection epitaxial wafer temperature.
The raman spectral signal that epitaxial wafer produces and the folded light beam that comprises reflectance spectrum, thermal radiation optical spectrum are all after plano-convex lens 202, by the first spectroscope 201, be divided into two bundles, after a branch of transmission, for Raman spectrum, survey, after another bundle reflection, along the opposite direction of exciting light, propagate, as shown in Figure 4.The present invention adds the second spectroscope 210 in the light path of exciting light, light source 3 sends monochromatic exciting light and enters probe 2, then from the second collimation lens 208, becomes directional light through the 3rd fiber coupler 209, after the second spectroscope 210 transmissions, make to excite luminous energy enter confocal light path by the first spectroscope 201 reflections, the light path being focused on by plano-convex lens 202, while the second spectroscope 210 can be sent to detector 5 by the folded light beam reflection that comprises reflectance spectrum, thermal radiation optical spectrum again and gather, analyzes.Wherein, described reflection is transmitted as folded light beam and after the second spectroscope 210 reflection, enters the 3rd condenser lens 211 and converge and enter the second fiber coupler 212, then by optical fiber transmission, is delivered in detector 5, detects reflectance spectrum signal and thermal radiation optical spectrum signal.
In the present embodiment, the online real-time characterization device of thin film epitaxial growth of the present invention, not only can survey the Raman spectral information that epitaxial wafer 102 produces, can also extract reflectance spectrum, the thermal radiation optical spectrum information in folded light beam simultaneously, obtain the information such as epitaxial surface quality, epitaxy layer thickness, epitaxial wafer temperature, by all information of comprehensive analysis, can judge better the quality of outer layer growth.
1, the accurate resetting of measurement that utilizes reflectance spectrum signal to be Raman spectrum
Although the reflectivity of epitaxial wafer 102 is to change with growth thickness, but, relative graphite slide glass dish, the reflectivity of epitaxial wafer is far above graphite slide glass dish 101, therefore the reflectance spectrum signal measuring is to fluctuate along with the rotation of graphite slide glass dish 101, as shown in Figure 5.
In MOCVD technique, in order to make the growth quality of epitaxial wafer 102 even as much as possible, MOCVD equipment is controlled very steady to the rotating speed of graphite slide glass dish 101.Therefore, in the present embodiment, on the basis of embodiment 2, further improve, by the reflectance spectrum signal detecting by real-time analysis detector 5, obtain the angular displacement relation of reflectance spectrum fluctuation and graphite slide glass dish 101, thereby carry out angular displacement prediction.As Fig. 5, it is certain point on graphite slide glass dish 101 that A selects, by angular displacement, predict, can predict the positional information that on epitaxial wafer 102, B is ordered, the online real-time characterization device of thin film epitaxial growth carries out raman spectroscopy measurement when forwarding B point to by spiraling at graphite slide glass 101 so.So just guarantee that raman spectral signal is all to excite in same epitaxial wafer, same position, thereby guarantee repeatability and the stability of raman spectral signal.
2, utilize michelson interferometry in conjunction with the rotation of graphite slide glass dish, raman spectral signal to be extracted
The present invention utilizes 3 pairs of raman spectral signals of Fourier Tranform spectrometer to extract, its core component is Michelson interferometer, as shown in Figure 6, by moving horizontally of mobile mirror, produce controllable, time dependent optical path difference Δ L, its effect is that the luminance spectrum of light signal is launched in time domain, then by Fourier Tranform, time spectrum is transformed to the spectrum in spatial domain dispersion, thereby extracts spectral signal.
Michelson interferometer need to be lasting light signal and continually varying light path, just can extract spectral signal.Yet in MOCVD, epitaxial wafer is to be in continuous rotation with graphite slide glass dish, therefore can not in the same position of identical epitaxial wafer, realizes lasting Raman spectrum and excite.
The present invention, by the change in optical path length of the mobile mirror of Michelson interferometer, is mated corresponding with the turned position variation of graphite slide glass dish 101.As shown in Figure 7, take 1# epitaxial wafer as example, interferometer optical path difference and epitaxial wafer 102 position relationships are described.By method noted earlier, analyze reflectance spectrum signal, obtain the angular displacement of graphite slide glass dish, Accurate Prediction is B point position with the same of one-level 1# epitaxial wafer 102, guarantees to excite each time the position of Raman spectrum, all has well accurately resetting.Meanwhile, controlling the mobile mirror of Michelson interferometer, is that 1# epitaxial wafer 102 turns round 1 week with graphite slide glass dish whenever what predict, and future position is that B point is aimed at while popping one's head in again, has all moved 1 constant optical path difference Δ L.
As shown in Figure 8, when the optical path difference of Michelson interferometer is since 0 (or from certain initial value), with graphite slide glass dish 101, often turn mode that 1 circle increases progressively Δ L in operation, after graphite slide glass dish 101 rotates n circle, optical path difference reaches maximal value L, then often to turn the successively decrease mode of Δ L of 1 circle, optical path difference is returned to 0(or certain initial value), circulation successively.
For probe, all at the B of 1# epitaxial wafer point, excite and gather spectral signal at every turn like this, and the optical path difference L of Michelson interferometer, in the mode of graphite slide glass disc spins number of times, is divided into n equal portions, each equal portions is Δ L.When the value of Δ L is controlled, make when smaller, can think approx that the light path of Michelson interferometer is continually varying.
MOVCD for far field coupled mode, the velocity of rotation very fast (conventionally in 1000rad/min left and right) of graphite slide glass dish, in this case, the optical path difference variation of interferometer can only realize and often turn 1 Δ L of 1 circle variation, example as shown in Figure 7, just be difficult in graphite slide glass dish rotates 1 circle the raman spectral signal that excites successively A, B, C to order on 1# epitaxial wafer.
Yet, MOVCD for near-field coupling type, the velocity of rotation of graphite slide glass dish is slow (conventionally below 200rad/min), in this case, the optical path difference of interferometer can often turn 1 circle and change a plurality of Δ L, after moving, master controller is analyzed reflectance spectrum signal, obtain the angular displacement of graphite slide glass dish, the difference position of Accurate Prediction epitaxial wafer, and at the mobile Δ L of each diverse location point.Example as shown in Figure 9, graphite slide glass dish rotates in 1 circle, the raman spectral signal that can excite successively A, B, C to order on 1# epitaxial wafer.For same epitaxial wafer, the raman spectral signal difference of diverse location is also little, can think approx the raman spectral signal that A, B, C are ordered, and is equal to that B orders.
Therefore, the present invention, no matter for far field or the MOVCD of near-field coupling type, can realize the detection of Raman spectrum equally.
In the present embodiment, as shown in figure 10, plano-convex lens 202, the first spectroscope 201, the first condenser lens 205, confocal pinhole 204 form confocal microscopy light path, exciting light first produces reflection on the first spectroscope 201, through plano-convex lens 202 optical focus, by being arranged on the quartz observing window 104 on spray head 103, enter MOCVD reaction chamber, it is upper that exciting light focuses on epitaxial wafer 102 surfaces, and epitaxial wafer 102 is along with graphite slide glass dish 101 is done gyration together.
When exciting raman spectral signal, also reflectance spectrum, thermal radiation optical spectrum signal have been produced, these spectral signals become parallel beam through plano-convex lens 202 again, return to confocal microscopy light path, and be divided into two-beam signal at the first spectroscope 201, wherein after a branch of transmission, by the first condenser lens 203, converge to and in confocal pinhole 204, form " pointolite ", play the effect to flashlight spatial filtering, finally by accurate the first collimation lens 205, the second condenser lens, focus on 206 and enter the first fiber coupler 207, this branch of light signal is as raman spectral signal; After another bundle reflection, again by the second spectroscope 210 reflections, condenser lens 210 focuses into into fiber coupler the second fiber coupler 212, and this branch of light signal is as reflectance spectrum, thermal radiation optical spectrum signal.
After the light that excitation light generation device 301 sends is modulated by chopper 302, by the 3rd spectroscope 303, be divided into two-beam signal, wherein after a branch of transmission, by the 4th condenser lens 304, enter the 4th fiber coupler 305, by multimode optical fiber, transmit, the 3rd fiber coupler 209 outgoing, collimation lens 208 becomes directional light, becomes exciting light; After another bundle reflection, by condenser lens 306, converged on photodetector 309, as the intensity reference light signal of reflectance spectrum signal.
Reflectance spectrum signal and thermal radiation optical spectrum signal transmit detector 5 by multimode optical fiber, the 5th fiber coupler 501 outgoing, the 3rd collimation lens 502 becomes directional light, by other wavelength light of filter glass group 503 eliminations, only retain with light source with light signal frequently, then line focus lens 504 converge on photodetector 505, carry out reflectance spectrum signals collecting.
Raman spectral signal transmits through multimode optical fiber, from 401 outgoing of six fibers coupling mechanism, through the 4th collimation lens 402, become directional light, then by filter glass group 403 elimination Rayleigh scattering lights, enter the Michelson interferometer being formed by spectroscope 404, stationary mirror 405, mobile mirror 407, condenser lens 406, photodetector 409.5 detections of 6 pairs of detectors of master controller obtain reflectance spectrum signal and carry out Real-time Collection and analysis, epitaxial wafer 102 positions are predicted, and according to the optical path difference control module 408 predicting the outcome by Michelson interferometer, control the displacement of mobile mirrors 407, each raman spectral signal is extracted all on epitaxial wafer.
Innovative point
1,, in MOCVD epitaxial process, utilize Raman spectrum to carry out real-time characterization to film.
2, utilize reflection-type confocal formula light path, installing, reduced the space that probe takies on MOCVD spray head, and then reduced the impact of probe on the MOCVD quality of production; In function, realize Raman spectrum and excite when measuring, also realized the online of reflectance spectrum and temperature and measured in real time.
3, by reflectance spectrum signal, the position that excites of epitaxial wafer is predicted, guarantee that raman spectral signal is all to carry out in the same position of same epitaxial wafer, thereby guarantee repeatability and the stability of raman spectral signal.
4,, by the space displacement of mobile mirror in Michelson interferometer, combine with the spatial rotation of graphite slide glass dish, thereby no matter for far field or the MOVCD of near-field coupling type, all realized in MOCVD, the online detection of Raman spectrum in real time.
Although above the illustrative embodiment of the present invention is described; so that those skilled in the art understand the present invention; but should be clear; the invention is not restricted to the scope of embodiment; to those skilled in the art; as long as various variations appended claim limit and definite the spirit and scope of the present invention in, these variations are apparent, all utilize innovation and creation that the present invention conceives all at the row of protection.
Claims (6)
1. the online real-time characterization device of thin film epitaxial growth, is characterized in that, comprises light source, probe and Fourier transform spectrometer;
Described probe comprises the first spectroscope, plano-convex lens, the first condenser lens, confocal pinhole, the first collimation lens and the second condenser lens; Light source send monochromatic exciting light by the first spectroscope reflection after, by plano-convex lens, focused on, by the watch window at MOCVD reaction chamber top, focus point is radiated on epitaxial wafer; The raman spectral signal that epitaxial wafer focus point irradiation area is excited is collected by plano-convex lens and is passed through after the first spectroscope transmission, through the first condenser lens, converge, at the focus place of the first condenser lens, it is confocal pinhole, the raman spectral signal being excited through confocal pinhole after spatial filtering suppresses parasitic light, through the first collimation lens, become directional light and the second condenser lens and focus on and enter the first fiber coupler, then through Optical Fiber Transmission to Fourier transform spectrometer;
Fourier transform spectrometer, launches the luminance spectrum of the raman spectral signal of reception in time domain, then has Fourier transform that time domain luminance spectrum is transformed to the spectrum in spatial domain dispersion, extracts spectrum.
2. online real-time characterization device according to claim 1, it is characterized in that, in the light path of described exciting light, add the second spectroscope, light source sends monochromatic exciting light and enters probe, then from the second collimation lens, becomes directional light through the 3rd fiber coupler, after the second spectroscope transmission, make exciting light enter confocal light path is reflected by the first spectroscope, the light path being focused on by plano-convex lens, the second spectroscope is sent to the folded light beam reflection that comprises reflectance spectrum, thermal radiation optical spectrum detector collection, analyzes simultaneously; Wherein, described reflection is transmitted as folded light beam and after the second spectroscope reflection, enters the 3rd condenser lens and converge and enter the second fiber coupler, then by optical fiber transmission, is delivered in detector, detects reflectance spectrum signal and thermal radiation optical spectrum signal.
3. online real-time characterization device according to claim 2, is characterized in that, also comprises a master controller;
Master controller carries out Real-time Collection and analysis to reflectance spectrum signal, and according to the optical path difference control module 408 predicting the outcome by Michelson interferometer, controls the displacement of mobile mirrors 407, and each raman spectral signal is extracted all on epitaxial wafer.
4. online real-time characterization device according to claim 3, it is characterized in that, master controller is analyzed reflectance spectrum signal, obtain the angular displacement of graphite slide glass dish, the same point position of the same epitaxial wafer of Accurate Prediction, guarantee to excite each time the position of Raman spectrum, all there is well accurately resetting; Meanwhile, control the mobile mirror of Michelson interferometer, whenever the epitaxial wafer of predicting turns round 1 week with graphite slide glass dish, when future position is aimed at probe again, all moved 1 constant optical path difference Δ L.
5. online real-time characterization device according to claim 3, it is characterized in that, the velocity of rotation of graphite slide glass dish is slow (conventionally below 200rad/min), in this case, the optical path difference of interferometer can often turn 1 circle and change a plurality of Δ L, after moving, master controller is analyzed reflectance spectrum signal, obtain the angular displacement of graphite slide glass dish, the difference position of Accurate Prediction epitaxial wafer, and at the mobile Δ L of each diverse location point.
6. according to the online real-time characterization device described in claim 4 or 5, it is characterized in that, when the optical path difference of Michelson interferometer is since 0 (or from certain initial value), with graphite slide glass dish, often turn mode that 1 circle increases progressively Δ L in operation, after graphite slide glass dish rotates n circle, optical path difference reaches maximal value L, then often to turn the successively decrease mode of Δ L of 1 circle, optical path difference is returned to 0(or certain initial value), circulation successively.
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| CN107611049A (en) * | 2017-09-18 | 2018-01-19 | 佛山科学技术学院 | A kind of epitaxial wafer multi-parameter in-situ monitoring method and device based on real time spectrum |
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| CN108254912A (en) * | 2018-01-23 | 2018-07-06 | 电子科技大学 | A kind of real-time microscopic monitoring system for nitride MOCVD epitaxy growth pattern |
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| CN108254912B (en) * | 2018-01-23 | 2020-03-27 | 电子科技大学 | Real-time microscopic monitoring system for nitride MOCVD epitaxial growth mode |
| US11410849B2 (en) * | 2018-01-23 | 2022-08-09 | University Of Electronic Science And Technology Of China | Device and method for measuring film longitudinal temperature field during nitride epitaxial growth |
| CN110487739A (en) * | 2018-08-30 | 2019-11-22 | 中山大学 | MOCVD real-time online infrared detection system |
| CN110470611A (en) * | 2019-07-10 | 2019-11-19 | 中国科学院上海技术物理研究所 | A kind of on-line measuring device and method of gaN series film growth conditions |
| CN110470611B (en) * | 2019-07-10 | 2022-08-16 | 中国科学院上海技术物理研究所 | On-line detection device and method for growth conditions of GaN-based thin film |
| CN111965164A (en) * | 2020-08-19 | 2020-11-20 | 天津大学 | Confocal Raman spectrum depth detection method for thickness of carbonized epitaxial layer |
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