CN2641641Y - Reflection difference device for in-situ real time detection film growth status - Google Patents
Reflection difference device for in-situ real time detection film growth status Download PDFInfo
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- CN2641641Y CN2641641Y CN 03276452 CN03276452U CN2641641Y CN 2641641 Y CN2641641 Y CN 2641641Y CN 03276452 CN03276452 CN 03276452 CN 03276452 U CN03276452 U CN 03276452U CN 2641641 Y CN2641641 Y CN 2641641Y
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- time detection
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Abstract
The utility model relates to a light reflection differential device of an original position real-time detection film growth condition. The device comprises a polarizer arranged in front of the output light of a laser, a light polarization modulator is arranged on the light path in front of the polarized light emitted by the polarizer, an electro optic modulation element is arranged on the output light path, after being modulated, the output light is emitted into an epitaxial room window, and then onto a surface epitaxial base sheet to be detected, the light reflected by the epitaxial base sheet surface is output from the epitaxial room window, onto the detector through an analyzer, and the detector, the amplifier and the data collecting and processing system are electrically connected. The device is independent from a film making system, without the limitation of film making temperature and air pressure, and simultaneously two paths of signals of fundamental frequency and double frequency are obtained, to detect the information of detective original cell layer epitaxial growth. The utility model has the advantages that the application scope is broad, the obtained information is rich and the operation is simple and convenient, being a powerful tool for detecting the film layer shape epitaxial growth and researching the film forming mechanism.
Description
Technical field
The utility model relates to a kind of optical instrument, particularly relates to a kind of isolated plant of optics original position real-time detection thin film epitaxial growth situation.
Background technology
Thin film technique has become the important means of exploring new material and the various high performance devices of preparation with its unique advantage and characteristic, and membrane science has become one of most active front subject.Component, structure and the characteristic of artificial control atomic scale epitaxial growth film material, being preparation high-performance high-quality epitaxial film and the artificial basis of designing new function material and carrying out fundamental researchs such as its respective physical chemistry, is the most noticeable and interested field of Condensed Matter Physics and material science aspect.Wanting the high-quality thin film material of epitaxial growth special construction and characteristic, is vital for the original position real-time detection and the monitoring of thin film epitaxial growth process.
One of main tool of original position real-time detection at present and monitoring film epitaxial growth conditions is to adopt reflection high energy electron diffraction and ellipsometry instrument; Owing to when these two kinds of instruments of application are surveyed with the monitoring film epitaxial growth conditions, have shortcoming, so their range of application is very limited for conditional request harshnesses such as operating air pressure and temperature.The China Patent No. that we have authorized: 97104431.7; Denomination of invention: the light reflection difference method of detection and monitoring film epitaxial growth and thermal annealing and the composition of device are as shown in Figure 1.It is made up of laser instrument, lens, catoptron, modulator, plane parallel slide, photodetector, amplifier and data acquisition processing system.But above-mentioned patent is by gathering the light reflection difference oscillator signal that frequency-doubled signal obtains the thin film epitaxial growth situation.And can not monitor fundamental frequency and frequency multiplication two paths of signals simultaneously, if can monitor fundamental frequency and frequency multiplication two paths of signals simultaneously, will obtain more information and result.
Summary of the invention
The purpose of this utility model is to overcome the defective of original real-time detection and epitaxially grown light reflection difference method of monitoring film and device; In order to survey fundamental frequency and frequency-doubled signal simultaneously, and observe the real-time information of the more film surface structures and the state of oxidation, further survey the film forming procedure of film, preparing even more ideal membraneous material, thereby provide a kind of light reflection difference device that is used for original position real-time detection film stratiform epitaxial growth conditions.
The purpose of this utility model is finished like this:
The light reflection difference device of original position real-time detection film growth situation of the present utility model comprises: laser instrument 1, the polarizer 5, light polarization modulator 6, photodetector 15, filtering circuit 16, amplifier 17 and data acquisition processing system 18; It is characterized in that: also comprise electro-optical modulation device 7 and analyzer 14; Wherein a polarizer 5 is settled in the place ahead of laser instrument 1 output light, the polarized light of the polarizer 5 outgoing is through settling a light polarization modulator 6 on the light path in the place ahead, settle an electro-optical modulation device 7 on the output light path, behind the output light incident epitaxial chamber window 10 of ovennodulation, incide the epitaxial substrate surface that is detected, light after the surface reflection of extension tunic is from 13 outputs of epitaxial chamber's window, by outputing to detector 15 behind the analyzer 14, a resistance of filtering circuit 16 is connected in parallel on the output terminal of detector, and another resistance is connected in parallel on amplifier input terminal; Detector 15, amplifier 17 and data acquisition processing system 18 electrically connect; Be that detectable signal input amplifier 17 after filtering circuit 16 filtering amplifies, the signal after will amplifying then is input to data acquisition processing system 18.
Described filtering circuit adopts the filtering of л type, selects the ceramic condenser of two 10K resistance and one 0.1 μ for use, the two ends of electric capacity is connected with a resistance respectively, two resistance and the unconnected end of the electric capacity also ground connection that links together.
In order to satisfy actual needs, also be included in laser instrument is exported needs to change beam direction in the place ahead light path of light any position of sound production catoptron, perhaps in the place ahead light path of electro-optical modulation device output light, lay Yi Guanglan,, make experiment obtain better effect to reach restriction and to isolate parasitic light.
Settle lens on the light path between electro-optical modulation device and the light hurdle for the sensitivity that improves detection also is included in isolated plant of the present utility model, its effect is the divergence that reduces laser beam.
Described photodetector is photodiode, antimony cadmium mercury, pyroelectricity, photomultiplier or opto-electronic conversion detector.
The purpose of laying a polarizer in the isolated plant of the present utility model is to be used for the accurately direction of vibration of definite initial line polarized light.
Light polarization modulator in the isolated plant of the present utility model is a light ball modulator, the purpose that it is set be the laser beam of single direction polarization can be modulated into the polarization direction by P to S, again by S to P, the modulating lasering beam that modulating frequency can be continuously changed to several ten thousand Hz polarization directions by tens Hz.
Electro-optical modulation device in the isolated plant of the present utility model is a general gram box, can be applied to voltage on the general gram box by change and change phase shift between P polarized light and the S polarized light, and voltage is adjustable continuously to 2000 volts from 0 volt.
Advantage of the present utility model is:
Device of the present utility model independently is placed in outside the thin film epitaxial growth system, is not subjected to temperature, barometric pressure effect during use.Owing to increased electro-optical modulation device in this device, be used for fundamental frequency signal being returned to zero in the experiment incipient stage, can survey fundamental frequency signal like this; Use analyzer to replace the level crossing group, can reach the purpose of surveying fundamental frequency signal and frequency-doubled signal simultaneously, thereby obtain more about the status information of film in epitaxial process with the frequency-doubled signal zeroing.This carries out the method for the real-time monitoring of thin film epitaxial growth situation, the thin film epitaxial growth of detectable and monitoring atomic scale precision, and applied range, method is simple.
Description of drawings
Below in conjunction with drawings and Examples the utility model is described in detail:
Fig. 1 is that existing light reflection difference device is formed synoptic diagram.
Fig. 2 is that light reflection difference device of the present utility model is formed synoptic diagram.
Fig. 3 (a) is that a kind of embodiment of the present utility model thickness of growing is about the 1/4 light reflection difference oscillating curve of surveying optical wavelength, and dot-and-dash line is represented fundamental frequency signal, and solid line is represented frequency-doubled signal.
Fig. 3 (b) is the oscillator signal corresponding to each primitive unit cell layer of extension that records with method of the present utility model.
Drawing is described as follows:
The 1---laser instrument; 2, the 3---catoptron; 4,9---light hurdle;
The 5---polarizer; The 6---light polarization modulator; The 7---electro-optical modulation device;
The 8---lens; 10,13---epitaxial chamber window; 11---epitaxial chamber;
The 12---epitaxial substrate; The 14---analyzer; The 15---photodetector;
The 16---filtering circuit; The 17---amplifier; The 18---data acquisition processing system;
Embodiment
Embodiment 1:
Make the light reflection difference device of an original position real-time detection film growth situation of the present invention by Fig. 2, with reference to figure 2, the He-Ne laser instrument of laser instrument 1 usefulness output polarization optical wavelength 632.8nm among the figure; 5524 type polarizers 5 of buying from New Focus are settled in the place ahead of laser instrument 1 output light, the PEM90 type light ball modulator 6 of the polarized light of the polarizer 5 outgoing through settling a usefulness U.S. Hinds company to produce on the light path in the place ahead, settle an electro-optical modulation device 7 on the output light path, the general gram box of IMPACT10 type that this electro-optical modulation device 7 uses Cleveland Crystals company to produce, behind the output light incident epitaxial chamber window 10 of ovennodulation, incide the epitaxial substrate surface that is detected, light after the surface reflection of extension tunic is from 13 outputs of epitaxial chamber's window, by outputing to detector 15 behind the analyzer 14, photodetector 15 (with the 818-B8-40 type silicon photoelectric diode of U.S. Newport-Klinger company production), amplifier 17 and data acquisition processing system 18 electrically connect; Be that detectable signal input amplifier 17 after filtering circuit 16 filtering amplifies, the signal after will amplifying then is input to data acquisition processing system 18.Analyzer 14 uses the polarizer of the CVI Laser CPAD-10.0-425-675 of company model; The lock-in amplifier of the SR830DSP model of amplifier 17 usefulness Stanford Research Systems; Data acquisition processing system 18 is made up of data collecting card and computer.
At first open laser instrument 1, the polarized light of output can incide the polarizer 5 by light hurdle 4, also can be directly incident on the polarizer 5 by polarized light, light by the polarizer enters light polarization modulator 6, by the modulation light again by the electro-optical modulation device on the light path 7, change the voltage scalable P polarization and the phase shift between the S polarized light be applied on the electro-optical modulation device 7, play the effect that fundamental frequency signal returns to zero; Can scioptics 8 or directly 30 °-87 ° incident angle scope incides epitaxial substrate 12 in the epitaxial chamber from epitaxial chamber's window 10 on from the light of electro-optical modulation device outgoing, the light of substrate 12 reflections penetrates from epitaxial chamber's window 13 and incides analyzer 14, and the angle that changes between analyzer 14 and the P polarization can reach the purpose that frequency-doubled signal returns to zero.Light by analyzer 14 is received by photodetector 15, photodetector 15 is transformed into electric signal to light signal, electric signal is after filtering circuit 16 filtering, be input to amplifier 17, signal after amplifying is input to conventional data acquisition processing system 18 again, obtain the result after treatment, again the result is controlled epitaxial growth conversely.
Embodiment 2:
With reference to figure 2, laser instrument 1 uses the He-Ne laser instrument of output wavelength 632.8nm, 5mW, output polarization light, catoptron 2 and 3 changes beam direction, according to experiment and actual needs, can in light path, need to change any position of sound production catoptron of beam direction, light hurdle 4 and 9 restrictions with isolate parasitic light, the polarizer 5 is used for accurately determining the direction of vibration of initial line polarized light.Light polarization modulator 6 is light ball modulators, it the laser beam of single direction polarization can be modulated into the polarization direction by P to S, again by S to P, the modulating lasering beam that modulating frequency can be continuously changed to several ten thousand Hz polarization directions by tens Hz.Electro-optical modulation device 7 is general gram boxes, can be applied to voltage on the general gram box by change and change phase shift between P polarized light and the S polarized light, and voltage is adjustable continuously to 2000 volts from 0 volt.The effect of lens 8 is the divergence that reduces laser beam.Analyzer 14 is placed on after the outgoing window, and there is fixed angle light transmission shaft and P polarization direction.In the experiment incipient stage, regulate voltage on the general gram box and the corner dimension between analyzer and the P polarization fundamental frequency and frequency-doubled signal are returned to zero respectively.Therefore, polarized light from laser instrument 1 output, behind catoptron 2 and 3, pass through the polarizer 5 again, incide light ball modulator 6, consider the response frequency of amplifier, we are adjusted to 50KHz with the frequency of modulator, initial P polarized light becomes to frequency 50KHz by P to S, by the Polarization Modulation light beam of S to the P polarization after ovennodulation.Behind electro-optical modulation device 7, light incides epitaxial substrate 12 surfaces in the epitaxial chamber 11 with 30 °-87 ° incident angle from epitaxial chamber's window 10.After substrate 12 reflections, penetrate from window 13, behind the analyzer 14 behind the emergent light process outgoing window, receive by photodetector 15, and light signal is transformed into electric signal, the output terminal of detector 15 is connected with filtering circuit 16 input ends, filtering circuit can be T type or the filtering of л type, and purpose is to filter the low-frequency noise that some are produced by power supply or vibration etc., thus the resolution and the sensitivity that improve signal.Be connected through the input end of filtered signal with lock-in amplifier 17, the output terminal of amplifier 17 is connected with data acquisition processing system 18, by data acquisition processing system 18 image data and export experimental result.As long as we finely tune the angle of voltage on the general gram box 7 and analyzer 14 and P polarization direction, just can obtain optimal results in the experimentation.
The He-Ne laser medium film catoptron of the diameter 25.4mm that catoptron 2,3 usefulness Newport companies sell in the present embodiment; The adjustable aperture Guang Lan that light hurdle 4,9 companies of usefulness Daheng produce; The polarizer 5 is 5524 type polarizers of buying from New Focus; The PEM90 type light ball modulator that light polarization modulator 6 usefulness U.S. Hinds companies produce; The general gram box of IMPACT10 type that electro-optical modulation device 7 uses Cleveland Crystals company to produce; The quartz lens of the homemade diameter phi 30mm in lens 8 rivers, thick 3mm, focal length 400mm; Analyzer 14 uses the polarizer of the CVI Laser CPAD-10.0-425-675 of company model; The 818-B8-40 type silicon photoelectric diode that photodetector 15 usefulness U.S. Newport-Klinger companies produce; Filtering circuit 16 adopts the filtering of homemade л type, just respectively connect the resistance of a 10K at the electric capacity two ends of one 0.1 μ, the other two ends of two 10K resistance are connected and ground connection, then the two ends of a resistance are connected with the output terminal of detector, the two ends of another resistance are connected with amplifier input terminal; The lock-in amplifier of the SR830 DSP model of amplifier 17 usefulness Stanford Research Systems; Data acquisition processing system 18 is made up of data collecting card and computer.
Fig. 3 adopts device shown in Figure 2 to be applied in the laser molecular beam epitaxy process and the light reflection difference oscillator signal during the continuous epitaxial growth of adopting that method of the present invention observes.The signal that light reflection difference method obtains is the stack of reflected signal in film interface reflected signal and the surperficial primitive unit cell layer growth process, Fig. 3 (a) is the light reflection difference oscillating curve that the growth thickness is about 1/4 detection optical wavelength, dot-and-dash line is represented fundamental frequency signal, and solid line is represented frequency-doubled signal.Light reflection difference signal big oscillation period is 1/4 to survey light wavelength corresponding to epitaxially grown thickness.If surveying the light wavelength is the He-Ne laser instrument of 632.8nm, the thickness of the cycle correspondence that each is big is 158.2nm approximately.Shown in Fig. 3 (a), fundamental frequency signal is than leading 1/4 cycle of the peak of frequency-doubled signal.If launched big oscillation period, just can observe the oscillator signal shown in Fig. 3 (b) corresponding to each primitive unit cell layer of extension.And the amplitude of the primitive unit cell layer of large period diverse location correspondence vibration is different.For the epitaxial material of different refractivity, it is different obtaining the light reflection difference signal period.Under the batch (-type) epitaxial growth condition, the shape of fundamental frequency signal is different with the shape of frequency-doubled signal, shows the surface information difference that two acquisition of signal arrive.Therefore, our experimental result also shows, with light reflection difference method survey epitaxial process with monitoring film be a kind of highly sensitive, the information of obtaining is many, applied range, the unusual thin film epitaxial growth INSITU REAL TIME of practicality.
Embodiment 3:
The device of present embodiment is made by embodiment 2 and is done, and just the plane parallel slide of analyzer 14 usefulness more than one replaces, and present embodiment is with two.
Embodiment 4:
The device of present embodiment is made by embodiment 2 and is done, and just electro-optical modulation device 7 uses Kerr cell.
Embodiment 5:
The device of present embodiment is made by embodiment 2 and is done, and just laser instrument 1 is selected semiconductor laser for use.
Embodiment 6:
The device of present embodiment is made by embodiment 2 and is done, and just amplifier 17 is selected the self-control differential amplifier for use.
Embodiment 7:
The device of present embodiment is made by embodiment 2 and is done, and just the half-wave plate of a high speed rotating of light polarization modulator 6 usefulness replaces light ball modulator.
Embodiment 8:
The device of present embodiment is made by embodiment 2 and is done, and just data acquisition processing system 18 selects for use function recording instrument directly to run a curve.
Embodiment 9:
The device of present embodiment is made by embodiment 2 and is done, and just fast-response pyroelectric detector of photodetector 15 usefulness replaces photodiode.
Claims (10)
1. a light reflection difference device that is used for original position real-time detection film growth situation comprises: laser instrument (1), the polarizer (5), light polarization modulator (6), photodetector (15), filtering circuit (16), amplifier (17) and data acquisition processing system (18); It is characterized in that: also comprise electro-optical modulation device (7) and analyzer (14); Wherein a polarizer (5) is settled in the place ahead of laser instrument 1 output light, the polarized light of the polarizer (5) outgoing is through settling a light polarization modulator (6) on the light path in the place ahead, settle an electro-optical modulation device (7) on the output light path, behind output light incident epitaxial chamber's window (10) of ovennodulation, incide epitaxial substrate (12) surface that is detected, light after the surface reflection of extension tunic is from epitaxial chamber's window (13) output, by outputing to detector (15) behind the analyzer (14); Detector (15), filtering circuit (16), amplifier (17) and data acquisition processing system (18) electrically connect, and wherein a resistance of filtering circuit (16) is connected in parallel on the output terminal of detector (15), and another resistance is connected in parallel on the input end of amplifier (17).
2. by the described light reflection difference device that is used for original position real-time detection film growth situation of claim 1, it is characterized in that: also be included in the place ahead light path of laser instrument (1) output light and lay a catoptron (2), perhaps order is laid two catoptrons (2) or (3).
3. by the described light reflection difference device that is used for original position real-time detection film growth situation of claim 1, it is characterized in that: also be included in and settle lens (8) on electro-optical modulation device (7) output light path.
4. by the described light reflection difference device that is used for original position real-time detection film growth situation of claim 3, it is characterized in that: also be included in electro-optical modulation device (7) the output light light path and lay Yi Guanglan (4), perhaps also on the light path between electro-optical modulation device (7) and the lens (8), settle a smooth hurdle (9).
5. by the described light reflection difference device that is used for original position real-time detection film growth situation of claim 1, it is characterized in that: described light polarization modulator is light ball modulator, half-wave plate or a polarizer.
6. the described light reflection difference device that is used for original position real-time detection film growth situation of claim 1, it is characterized in that: described electro-optical modulation device is a general gram box or Kerr cell.
7. by claim 1,2,3 or 4 each described light reflection difference devices that are used for original position real-time detection film growth situation, it is characterized in that: described filtering circuit 16 adopts the filtering of Л type, select the ceramic condenser of two 10K resistance and one 0.1 μ for use, the two ends of electric capacity are connected with a resistance respectively, and two resistance and the unconnected end of electric capacity link together and ground connection.
8. by the described light reflection difference device that is used for original position real-time detection film growth situation of claim 1, it is characterized in that: described photodetector is photodiode, antimony cadmium mercury, pyroelectricity, photomultiplier or opto-electronic conversion detector.
9. by the described light reflection difference device that is used for original position real-time detection film growth situation of claim 1, it is characterized in that: described analyzer can use the plane parallel slide to replace.
10. by the described light reflection difference device that is used for original position real-time detection film growth situation of claim 1, it is characterized in that: described filtering circuit comprises T type filtering circuit, N type filtering circuit or commodity wave filter.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 03276452 CN2641641Y (en) | 2003-08-25 | 2003-08-25 | Reflection difference device for in-situ real time detection film growth status |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 03276452 CN2641641Y (en) | 2003-08-25 | 2003-08-25 | Reflection difference device for in-situ real time detection film growth status |
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| CN2641641Y true CN2641641Y (en) | 2004-09-15 |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1302310C (en) * | 2003-08-21 | 2007-02-28 | 中国科学院物理研究所 | Light reflector and reflecting method for home positioning real-time detecting thin-membrane growing state |
| CN101532944B (en) * | 2008-03-11 | 2012-07-04 | 中国科学院物理研究所 | Light reflection differential method for testing component with small hole in biochip device and testing method thereof |
| CN103592284A (en) * | 2013-11-25 | 2014-02-19 | 电子科技大学 | Online real-time representation device for film epitaxial growth |
| CN104880436A (en) * | 2015-04-30 | 2015-09-02 | 华侨大学 | Film high-temperature photoelectric physical property testing device |
| CN105092480A (en) * | 2014-05-23 | 2015-11-25 | 中国科学院物理研究所 | Biochip used for OIRD detection method, and detection method thereof |
| CN105136681A (en) * | 2015-08-31 | 2015-12-09 | 中北大学 | Device for measuring micro-linear birefringence through photoelastic modulation and electro-optical modulation cascading |
| CN105319164A (en) * | 2014-07-24 | 2016-02-10 | 中国科学院物理研究所 | Biological chip used for OIRD detection method, and manufacturing method and detection method thereof |
| CN107219191A (en) * | 2017-04-14 | 2017-09-29 | 复旦大学 | A kind of oblique incident ray difference in reflection device based on Fourier transformation |
| CN112857270A (en) * | 2021-01-08 | 2021-05-28 | 上海科技大学 | Method for in-situ real-time quantitative detection of film roughness by using RHEED |
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2003
- 2003-08-25 CN CN 03276452 patent/CN2641641Y/en not_active Expired - Lifetime
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1302310C (en) * | 2003-08-21 | 2007-02-28 | 中国科学院物理研究所 | Light reflector and reflecting method for home positioning real-time detecting thin-membrane growing state |
| CN101532944B (en) * | 2008-03-11 | 2012-07-04 | 中国科学院物理研究所 | Light reflection differential method for testing component with small hole in biochip device and testing method thereof |
| CN103592284A (en) * | 2013-11-25 | 2014-02-19 | 电子科技大学 | Online real-time representation device for film epitaxial growth |
| CN103592284B (en) * | 2013-11-25 | 2015-08-26 | 电子科技大学 | The online real-time characterization device of a kind of thin film epitaxial growth |
| CN105092480B (en) * | 2014-05-23 | 2017-08-01 | 中国科学院物理研究所 | A kind of biochip and its detection method for OIRD detection methods |
| CN105092480A (en) * | 2014-05-23 | 2015-11-25 | 中国科学院物理研究所 | Biochip used for OIRD detection method, and detection method thereof |
| CN105319164A (en) * | 2014-07-24 | 2016-02-10 | 中国科学院物理研究所 | Biological chip used for OIRD detection method, and manufacturing method and detection method thereof |
| CN104880436A (en) * | 2015-04-30 | 2015-09-02 | 华侨大学 | Film high-temperature photoelectric physical property testing device |
| CN105136681A (en) * | 2015-08-31 | 2015-12-09 | 中北大学 | Device for measuring micro-linear birefringence through photoelastic modulation and electro-optical modulation cascading |
| CN105136681B (en) * | 2015-08-31 | 2017-07-25 | 中北大学 | A kind of device for playing light modulation and the Electro-optical Modulation cascade small linear birefrigence of micrometer |
| CN107219191A (en) * | 2017-04-14 | 2017-09-29 | 复旦大学 | A kind of oblique incident ray difference in reflection device based on Fourier transformation |
| CN107219191B (en) * | 2017-04-14 | 2020-05-12 | 复旦大学 | Oblique incidence light reflection difference device based on Fourier transform |
| CN112857270A (en) * | 2021-01-08 | 2021-05-28 | 上海科技大学 | Method for in-situ real-time quantitative detection of film roughness by using RHEED |
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