CN105136046B - Laser interferance method change in film thickness amount on-line monitoring method and device - Google Patents
Laser interferance method change in film thickness amount on-line monitoring method and device Download PDFInfo
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- CN105136046B CN105136046B CN201510249800.1A CN201510249800A CN105136046B CN 105136046 B CN105136046 B CN 105136046B CN 201510249800 A CN201510249800 A CN 201510249800A CN 105136046 B CN105136046 B CN 105136046B
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Abstract
The invention discloses a kind of laser interferance method change in film thickness amount on-line monitoring methods and device, this method to be：Laser focuses on tested film, interferes in the two beam reflected lights that the upper and lower surface of film generates；Interference light is detected, then forms visual periodically variable " voltage-vs-time " curve；In conjunction with periodicity and take time that the variable quantity of film thickness can be obtained.The device includes：Continuous type laser diode, light emitting diode, dichroscope, 50:50 light splitting pieces, achromatic lens, infrared objective, third light splitting piece, image-forming component, visible light edge filter, photodiode.Cooperating light emitting diode to provide illumination by infrared objective can image on image-forming component simultaneously by sample to be tested surface visible light pattern and measuring infrared laser hot spot, play the measurement in real time to sample surfaces specified point.The present invention has many advantages, such as that high precision, at low cost, real non-destructive, optical path is stable, system maintenance is convenient.
Description
Technical field
The invention belongs to photoelectric precision field of measuring technique, and in particular to a kind of laser interferance method change in film thickness amount exists
Line monitoring method and device.
Background technique
With the development of science and technology film is widely used in every field such as packaging, agricultural and hospitals, it is especially high
Molecular film is more widely applied in electronics industry.In the application, the thickness of film is to judge some key property of film
The important references of energy index, the influence to device are most important.Therefore, film it is online, real-time, dynamic, it is accurate, stable, non-
Contact measurement is extremely important to the production of film.
The method of measurement film thickness is broadly divided into non-on-line measurement and on-line measurement two major classes at present, specifically：(1) it is non-
Line measurement has that sonde method, optical pachymetry, other are non-in line method；(2) include online thickness measurement with laser method, capacitance thickness measuring method, penetrate
Line thickness measuring method, infrared thickness measuring method.Although non-on-line measurement can carry out precise measurement to existing fixed film thickness, there is its limitation
Property and deficiency, such as sonde method equipment is easy to damage film, not easily shifted, measurement process requires strictly without any vibration；Optics
Mensuration often uses Ellipsometric, and measuring speed is slower, can not carry out rapid survey.Non- on-line measurement simultaneously can not be to thin
The variation of film thickness in process is monitored on-line, therefore is unable to satisfy the demand of on-line measurement.
In online measuring method using it is most wide be thickness measurement with laser method, principle is upper and lower surface of the light beam in film
It reflects, two beam reflected lights are interfered, and measure number of interference fringes by forward-backward counter to obtain film thickness to be measured.Measurement
Error is 0.1%~0.3%, is still unable to satisfy film thickness in the measurement demand of Nano grade.And traditional measurement method
It is also relatively stringenter for the requirement for measuring environment, it can not give and measure in the process of film, this certainly will will cause largely
The wasting of resources.
Therefore, the high-precision of film thickness, lossless, online, inexpensive monitoring become a technical problem in the urgent need to address.
Summary of the invention
It is thick to provide a kind of laser interferance method film for the shortcomings that it is a primary object of the present invention to overcome the prior art and deficiency
Spend variable quantity on-line monitoring method, this method have the advantages that precision it is high, it is lossless, can monitor on-line, is at low cost.
The shortcomings that another object of the present invention is to overcome the prior art and deficiency provide a kind of above-mentioned film thickness of realization
The monitoring device of variable quantity on-line monitoring method, the device have many advantages, such as it is at low cost, be easy to construct.
The purpose of the present invention is realized by the following technical solution：Laser interferance method change in film thickness amount on-line monitoring side
Method focuses on laser on tested film, generates two beam reflected lights in the upper and lower surface of tested film, and two beam reflected lights occur
Interference forms interference light, the intensity of interference light with tested film thickness variation can generating period variation；Two pole of photoelectricity
The interference optical power of detection is converted to electric current by pipe, and current signal is converted to digital voltage signal, structure through data acquisition circuit
Build " voltage-vs-time " curve；The time as needed for signal period is it is known that and the tested change in film thickness of expression of each periodWherein λ is optical maser wavelength, and n is tested the refractive index of film, obtains change in film thickness amount accordingly.
Preferably, the on-line monitoring method further includes the imaging to sample surfaces, and step is：Visible projects
On tested film, tested film surface is illuminated, a reflected light is obtained, image-forming component detects the reflected light, and then thin to being tested
Film surface is imaged.
A kind of monitoring device for realizing above-mentioned change in film thickness amount on-line monitoring method, including two pole of continuous type laser
Pipe, dichroscope, 50:50 light splitting pieces, achromatic lens, infrared objective, third light splitting piece, visible light edge filter, photoelectricity
Diode, image-forming component, dichroscope penetrate visible, reflection laser beam；What the continuous type laser diode generated
Laser beam passes sequentially through dichroscope, 50:After 50 light splitting pieces, achromatic lens, infrared objective, it is focused into tested film surface
One hot spot, laser beam are interfered in the two beam reflected lights that tested film upper and lower surface generates；Interference light is successively passed through infrared
Object lens, achromatic lens, 50:Enter third light splitting piece after 50 light splitting pieces, is finally entered by the transmitted light of third light splitting piece
Image-forming component, the hot spot being tested on film are imaged on image-forming component；Reflected light by third light splitting piece passes through visible light again
Edge filter switchs to the current signal with film thickness information by photodiode detection.
Preferably, the monitoring device further includes the light emitting diode for illuminating to the optical path offer in monitoring device,
The visible that the light emitting diode generates is through dichroscope, 50:It is thrown after 50 light splitting pieces, achromatic lens, infrared objective
It is mapped to tested film surface, generates reflection, reflected light successively passes through infrared objective, achromatic lens, 50:Enter after 50 light splitting pieces
Third light splitting piece, the transmitted light through third light splitting piece enter image-forming component, and tested film is imaged on image-forming component.
Preferably, the continuous type laser diode uses continuous type single mode laser diode, and the wavelength of diode is selected
The smaller wavelength absorbed under corresponding in film absorption spectrum to be measured.This diode has preferable coherence and monochromaticjty.
Preferably, a non-spherical lens is additionally provided between the continuous type laser diode and dichroscope.The aspheric
Face lens can improve the directionality of continuous type laser diode, improve stray light and laser light energy waste.
Preferably, a plano-convex lens are additionally provided between the light emitting diode and dichroscope.The plano-convex lens can change
The optically focused characteristic of kind light emitting diode.
Preferably, the main basal plane of achromatic lens image space is achromatic lens at a distance from the main basal plane of infrared objective object space
The sum of image space focal length and infrared objective object space focal length.The lens group of the two composition can by the visible light pattern of tested film surface and
Measuring infrared laser hot spot images on image-forming component simultaneously.
Preferably, the high resolution of the infrared objective is in the resolution ratio of image-forming component.It thereby may be ensured that image quality.
Preferably, outline border is equipped with outside the monitoring device.So as to reduce the shadow of environment stray light to greatest extent
It rings.
Further, several cooling fins are set after light emitting diode, and sending out the hot fan is installed, and in outline border side
Several ventilation holes are arranged in wall.Guarantee the heat for removing light emitting diode generation in time, guarantees its illumination effect and service life.
Preferably, the monitoring device is mounted on an XYZ displacement platform.So as to adjust measurement in actual use
The relative position of device and tested film guarantees the precision and stability of measurement.
Compared with prior art, the present invention having the following advantages that and beneficial effect：
1, the present invention is based on laser interferance methods monitors change in film thickness amount on-line, can convert interference light intensity to
The high-precision measurement in film manufacturing process, and system may be implemented in visual " voltage-vs-time " curve by this method
Stability is strong, lossless, at low cost.
2, the present invention using infrared objective and achromatic lens cooperation light emitting diode provide illumination can by laser facula and
Tested film surface is imaged onto image-forming component, to realize the measurement to tested film surface specified point in real time.
3, the present invention not only can high-precision measurement change in film thickness amount, but also the variation of film thickness can be measured
Rate, and identify whether processing film terminates.
4, film also not rigid requirement of the method for the present invention to test, absorbs selected optical maser wavelength lesser
Film, measurement effect is more preferably；It can also be according to the continuous type laser diode of the film change suitable wavelength of required measurement.Together
When, to the form of film also without rigid requirement, it can be solid, be also possible to liquid or polymer.
Detailed description of the invention
Fig. 1 is laser path schematic diagram of the invention.
Fig. 2 is illumination imaging optical path schematic diagram of the invention.
Fig. 3 be the present invention relates to double principle of interference figures.
Fig. 4 is a kind of embodiment schematic diagram of the invention.
Specific embodiment
Technical effect of the attached drawing to design of the invention, specific structure and generation is subjected to clear, complete description below,
To be completely understood by the purpose of the present invention, feature and effect.Obviously, described embodiment is that a part of the invention is implemented
Example, rather than whole embodiments, based on the embodiment of the present invention, those skilled in the art is not before making the creative labor
Other embodiments obtained are put, the scope of protection of the invention is belonged to.Each technical characteristic in the invention, not
It can be with combination of interactions under the premise of conflicting conflict.
Embodiment 1
Thickness measurement with laser method in the prior art, principle are that light beam is reflected in the upper and lower surface of film, the reflection of two beams
Light is interfered, and measures number of interference fringes by forward-backward counter to obtain film thickness to be measured.And laser described in the present embodiment is dry
Relating to method change in film thickness amount on-line monitoring method is that a point vibration occurs for the two beam reflected lights generated according to the upper and lower surface in film
Width interference interferes enhancing when the optical path difference of two-beam is the even-multiple of half-wavelength, when the optical path difference of the two is half-wavelength
Odd-multiple when, interfere decrease, therefore, the intensity of interference light with film thickness variation can generating period change
Change.Interference optical power is detected using photodiode and is converted into electric current, converts current signal through data acquisition circuit
For digital voltage signal, " voltage-vs-time " curve is constructed；Each period indicates change in film thickness(λ is optical maser wavelength,
N is tested the refractive index of film), the time required to signal period can be intuitively obtained from the curve of acquisition.Binding curve can obtain
The variable quantity of film thickness.
In addition, also cooperating light emitting diode using infrared objective and achromatic lens in the present embodiment, providing illumination can be incited somebody to action
Laser facula and tested film surface are imaged onto image-forming component, to realize the survey to tested film surface specified point in real time
Amount.
It as depicted in figs. 1 and 2, is the laser path schematic diagram that is related to of the above method and illumination imaging optical path schematic diagram, by
In elaboration be that same number refers under Same Way, therefore in two figures is same object, only light source is different, and effect is not
Together.
As shown in Figure 1, including in laser path：Continuous type laser diode 1, non-spherical lens 2, light emitting diode 3,
Plano-convex lens 4, dichroscope 5,50:It is 50 light splitting pieces 6, achromatic lens 7, near-infrared infrared objective 8, third light splitting piece 9, visible
Light edge filter 10, photodiode 11, image-forming component 12, sample to be tested 13.As shown in Figure 1, laser diode 1 generates tool
There is the laser beam 18 of certain angle of divergence；Non-spherical lens 2 can greatly improve the directionality of laser diode 1；Dichroscope 5
Laser beam 18 is almost reflected；Laser diode 1 generate laser beam 18 through non-spherical lens 2, dichroscope 5,
50:50 light splitting pieces 6, achromatic lens 7, infrared objective 8 are focused into a hot spot on sample 13, and spot size is as far as possible
It is small.Laser beam 18 is interfered in the two beam reflected lights that tested film upper and lower surface generates；Interference light presses backtracking, successively
By infrared objective 8, achromatic lens 7,50:Third light splitting piece 9 is reached after 50 light splitting pieces 6.By the transmission of third light splitting piece 9
Light enters image-forming component 12, and the laser facula on sample to be tested 13 is imaged on image-forming component 12；By third light splitting piece 9
Reflected light is detected the electric current letter switched to 13 thickness information of film by visible light edge filter 10 by photodiode 11
Number, wherein visible light edge filter 10 pass through measuring infrared laser wavelength, and the visible light of imaging cannot penetrate.
As shown in Fig. 2, including in illumination imaging optical path：Continuous type laser diode 1, non-spherical lens 2, light emitting diode
3, plano-convex lens 4, dichroscope 5,50:50 light splitting pieces 6, achromatic lens 7, infrared objective 8, third light splitting piece 9, visible light are cut
Only optical filter 10, photodiode 11, image-forming component 12, sample to be tested 13.The visible that light emitting diode 3 generates has
Certain angle of divergence, plano-convex lens 4 can improve the optically focused characteristic of light emitting diode 3.Dichroscope 5 is to illuminating visible light
100% penetrates.The visible that light emitting diode 3 generates is successively through plano-convex lens 4, dichroscope 5,50:50 light splitting pieces 6,
Achromatic lens 7, infrared objective 8 project on sample 13, illuminate 13 surface of sample, wherein the main basal plane of 7 image space of achromatic lens
It is separated by a distance from the sum of 7 image space focal length of achromatic lens and 8 object space focal length of infrared objective with the main basal plane of 8 object space of infrared objective.It throws
Penetrate the illuminating bundle in sample 13 and generate reflection on 13 surface of sample, reflected light presses backtracking, successively by infrared objective 8,
Achromatic lens 7,50:Third light splitting piece 9 is reached after 50 light splitting pieces 6.Pixel is entered by the transmitted light of third light splitting piece 9
Part 12, sample 13 are imaged on image-forming component 12；By the reflected light of third light splitting piece 9 due to being provided with visible light light cutoff filter
Piece 10 can not penetrate, and can not be detected by photodiode 11.An object point 14 is arbitrarily chosen on 13 surface of sample, object point 14 is through red
Outer object lens 8, achromatic lens 7 are imaged on image-forming component 12 into a picture point 15, all object points on image-forming component 12 institute at
Picture point composition 13 surface of sample on image-forming component 12 at picture.
From Fig. 1,2 the course of work in it is found that laser beam and visible carry out the one of light at sample 13
A little transformation are two-beam interference schematic diagram according to the present invention, wherein sample to be tested 13 is by being tested 16 He of film referring to Fig. 3
Substrate 17 collectively constitutes, and incident laser beam 18 projects the surface of tested film 16；It is generated at " air-is tested film " interface
Reflected light 19 and transmitted light 20；Transmitted light 20 generates reflected light 21 and transmitted light 22, reflected light at " tested film-substrate " interface
21 generate transmitted light 23 at " tested film-air " interface, and optical wavelength is identical, frequency due to meeting for reflected light 19 and transmitted light 23
Identical, constant phase difference three interference sufficient and necessary condition greatly, therefore amplitude-splittine interference occurs.
Structure above is basic structure schematic illustration.Fig. 4 gives a kind of instance graph of concrete application, the device
Including continuous type laser diode 24, non-spherical lens 25, light emitting diode 26, plano-convex lens 27, dichroscope 28,50:50
Light splitting piece 29, achromatic lens 30, infrared objective 31, third light splitting piece 32, visible light edge filter 33, photodiode
34, image-forming component 35, laser diode driver circuit 36, data acquisition circuit 37, LED driving circuit 38, packaging are outer
Frame 39, external computer 40, XYZ displacement platform 41.What the laser beam and light emitting diode 26 that laser diode 24 issues issued
Visible exists simultaneously and works, and two-beam road is independently independent of each other mutually.Its index path is referring to Fig. 1,2.
In this embodiment, continuous type laser diode 24 is continuous type single mode laser diode, using for common half
Conductor material absorbs the laser of lesser infrared band, can also select other according to the optical characteristics of measured and monitored the growth of standing timber material in practice
The laser of wavelength, is not limited by the preferred embodiment of the present invention.
In this embodiment, select high-precision ADC voltage acquisition chip that film can be improved in data acquisition circuit 37
The precision of thickness measure；Image-forming component 35 can be using common CMOS or CCD for recording 13 surface visible light pattern of sample
With the image of measuring infrared laser hot spot.
In order to reduce the influence of environment stray light to greatest extent, outline border 39 is needed plus packed.To guarantee image quality,
The resolution ratio of infrared objective 31 is asked to be higher than the resolution ratio of image-forming component 35.
In addition, the light emitting diode 26 due to use itself can generate more heat while luminous, to guarantee hair
The illumination effect and service life of optical diode 26 take following three measures：Cooling fin, peace are set after light emitting diode 26
Dress light emitting diode 26 side wall install a sending out the hot fan, installation light emitting diode 26 while packaging outline border side wall beat
A little ventilation holes.To guarantee the precision and stability measured, measuring device is mounted on an XYZ displacement platform in embodiment, can
The relative position of measuring device and tested film is adjusted in actual use.
Better embodiment of the invention is illustrated above, but the invention is not limited to the implementation
Example, those skilled in the art can also make various equivalent modifications on the premise of without prejudice to spirit of the invention or replace
It changes, these equivalent variation or replacement are all included in the scope defined by the claims of the present application.
Claims (7)
1. laser interferance method change in film thickness amount on-Line Monitor Device, which is characterized in that including continuous type laser diode, two
To Look mirror, 50:50 light splitting pieces, achromatic lens, infrared objective, third light splitting piece, visible light edge filter, two pole of photoelectricity
Pipe, image-forming component, dichroscope penetrate visible, reflection laser beam；The laser that the continuous type laser diode generates
Beam passes sequentially through dichroscope, 50:After 50 light splitting pieces, achromatic lens, infrared objective, one is focused into tested film surface
Hot spot, laser beam are interfered in the two beam reflected lights that tested film upper and lower surface generates；Interference light successively pass through infrared objective,
Achromatic lens, 50:Enter third light splitting piece after 50 light splitting pieces, finally enters into pixel by the transmitted light of third light splitting piece
Part, the hot spot being tested on film are imaged on image-forming component；Ended again by visible light by the reflected light of third light splitting piece and is filtered
Mating plate switchs to the current signal with film thickness information by photodiode detection；
The monitoring device further includes for providing the light emitting diode of illumination, the light-emitting diodes to the optical path in monitoring device
The visible that pipe generates is through dichroscope, 50:Tested film is projected after 50 light splitting pieces, achromatic lens, infrared objective
Surface, generates reflection, and reflected light successively passes through infrared objective, achromatic lens, 50:Enter third light splitting piece after 50 light splitting pieces,
Transmitted light through third light splitting piece enters image-forming component, and tested film is imaged on image-forming component.
2. monitoring device according to claim 1, which is characterized in that the continuous type laser diode uses continuous type list
Mould laser diode, the wavelength of diode select the smaller wavelength absorbed under corresponding in film absorption spectrum to be measured.
3. monitoring device according to claim 2, which is characterized in that in the continuous type laser diode and dichroscope
Between be additionally provided with a non-spherical lens.
4. monitoring device according to claim 1, which is characterized in that between the light emitting diode and dichroscope also
Equipped with a plano-convex lens.
5. monitoring device according to claim 1, which is characterized in that the main basal plane of achromatic lens image space and infrared object
The distance of the main basal plane of mirror object space is the sum of achromatic lens image space focal length and infrared objective object space focal length.
6. monitoring device according to claim 1, which is characterized in that the high resolution of the infrared objective is in image-forming component
Resolution ratio.
7. monitoring device according to claim 1, which is characterized in that be equipped with outline border outside the monitoring device；
Several cooling fins are set after light emitting diode, and sending out the hot fan is installed, and several ventilations are set in outline border side wall
Hole；
The monitoring device is mounted on an XYZ displacement platform.
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| CN201510249800.1A CN105136046B (en) | 2015-05-15 | 2015-05-15 | Laser interferance method change in film thickness amount on-line monitoring method and device |
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| CN105136046B true CN105136046B (en) | 2018-11-16 |
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| CN106895942B (en) * | 2017-04-18 | 2022-11-04 | 深圳大学 | Preparation method and preparation device of optical fiber end face film type air pressure sensor |
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| CN101149564A (en) * | 2007-09-04 | 2008-03-26 | 上海微电子装备有限公司 | Alignment mark and its imaging optical system and imaging method |
| CN101261116A (en) * | 2008-04-20 | 2008-09-10 | 华中科技大学 | Thin film thickness and refractivity optical measurement method and its device |
| CN102483320A (en) * | 2009-10-13 | 2012-05-30 | 浜松光子学株式会社 | Film thickness measurement device and film thickness measurement method |
| CN102490112A (en) * | 2006-10-06 | 2012-06-13 | 株式会社荏原制作所 | Processing end point detecting method, polishing method and polishing apparatus |
| CN103592284A (en) * | 2013-11-25 | 2014-02-19 | 电子科技大学 | Online real-time representation device for film epitaxial growth |
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| US7339682B2 (en) * | 2005-02-25 | 2008-03-04 | Verity Instruments, Inc. | Heterodyne reflectometer for film thickness monitoring and method for implementing |
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|---|---|---|---|---|
| CN102490112A (en) * | 2006-10-06 | 2012-06-13 | 株式会社荏原制作所 | Processing end point detecting method, polishing method and polishing apparatus |
| CN101149564A (en) * | 2007-09-04 | 2008-03-26 | 上海微电子装备有限公司 | Alignment mark and its imaging optical system and imaging method |
| CN101261116A (en) * | 2008-04-20 | 2008-09-10 | 华中科技大学 | Thin film thickness and refractivity optical measurement method and its device |
| CN102483320A (en) * | 2009-10-13 | 2012-05-30 | 浜松光子学株式会社 | Film thickness measurement device and film thickness measurement method |
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