CN103579731A - Cascade structure type balance-and-unbalance converter - Google Patents
Cascade structure type balance-and-unbalance converter Download PDFInfo
- Publication number
- CN103579731A CN103579731A CN201210275819.XA CN201210275819A CN103579731A CN 103579731 A CN103579731 A CN 103579731A CN 201210275819 A CN201210275819 A CN 201210275819A CN 103579731 A CN103579731 A CN 103579731A
- Authority
- CN
- China
- Prior art keywords
- coil
- capacitor
- balanced
- unbalanced transformer
- pass filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a cascade structure type balance-and-unbalance converter (1). The cascade structure type balance-and-unbalance converter (1) comprises a low-pass filter (6) and a high-pass filter (7), wherein the low-pass filter (6) is arranged between an unbalance terminal (2) used for inputting and outputting unbalanced signals and a first balance terminal (3A) used for inputting and outputting balanced signals, and comprises a first coil (4A) and a first capacitor (5A), and the high-pass filter (7) is arranged between the unbalance terminal (2) and a second balance terminal (3B) used for inputting and outputting the balanced signals, and comprises a second capacitor (5B) and a second coil (4B). When a user observes the cascade structure type balance-and-unbalance converter (1) in the cascade direction of a cascade body, the first capacitor (5A) and the second capacitor (5B) are assembled in the areas different from the first coil (4A) and the second coil (4B).
Description
Technical field
The present invention relates to a kind of lit-par-lit structure type balanced-unbalanced transformer, it is the element that balanced signal and unbalanced signal are changed mutually.
Background technology
Balanced-unbalanced transformer is the element that balanced signal and unbalanced signal are changed mutually.Some balanced-unbalanced transformers are used in combination high pass filter (HPF) and low pass filter (LPF) (reference example is put down No. H10-200360 with Japanese Patent Application Laid-Open for as flat in Japanese Patent Application Laid-Open No. 2000-236227).The balanced-unbalanced transformer with this structure has conversion input and the conversion output of electrical connection.For example, because this reason,, compares with the balanced-unbalanced transformer of electromagnetic coupled type, insertion loss is less, can in the conversion of balance and unbalanced signal, input and the mating of output impedance.In addition, flat No. 2000-236227 and the flat lit-par-lit structure balanced-unbalanced transformer (lit-par-lit structure type balanced-unbalanced transformer) that forms conductive pattern between insulating barrier of having recorded for No. H10-200360 of Japanese Patent Application Laid-Open of Japanese Patent Application Laid-Open.
Yet the balanced-unbalanced transformer of recording in flat No. H10-200360 of Japanese Patent Application Laid-Open flat No. 2000-236227 and Japanese Patent Application Laid-Open is still having room for improvement aspect raising electrical property.
Summary of the invention
According to an aspect of the present invention, a kind of lit-par-lit structure type balanced-unbalanced transformer is provided, it comprises: low pass filter, is arranged between the uneven terminal of input and output unbalanced signal and the 1st balanced terminals of input and output balanced signal, and comprises the 1st coil and the 1st capacitor; High pass filter, is arranged between the 2nd balanced terminals of uneven terminal and input and output balanced signal, and comprises the 2nd capacitor and the 2nd coil; And duplexer, a plurality of layers that comprise a plurality of conductor layers that contain tool conductive pattern that are layered on substrate surface and a plurality of insulating barriers, and comprise low pass filter and high pass filter, wherein, when seeing from the stacked direction of duplexer, the 1st capacitor and the 2nd capacitor arrangements are in being different from the region of the 1st coil and the 2nd coil.
Read in conjunction with the drawings the detailed description of the preferred embodiment for the present invention below, will understand better above and other object of the present invention, feature, advantage and the importance in technology and industry.
Accompanying drawing explanation
Fig. 1 is the circuit diagram that is illustrated in the equivalent electric circuit of stacked structure type balanced-unbalanced transformer in embodiment of the present invention 1;
Fig. 2 is the sectional view that is illustrated in the structure of balanced-unbalanced transformer in execution mode 1;
Fig. 3 A is the plane graph that is illustrated in each conductor layer of balanced-unbalanced transformer in execution mode 1;
Fig. 3 B is the plane graph that each conductor layer of balanced-unbalanced transformer in execution mode 1 is shown;
Fig. 3 C is the plane graph that each conductor layer of balanced-unbalanced transformer in execution mode 1 is shown;
Fig. 3 D is the plane graph that each conductor layer of balanced-unbalanced transformer in execution mode 1 is shown;
Fig. 3 E is the plane graph that each conductor layer of balanced-unbalanced transformer in execution mode 1 is shown;
Fig. 4 A illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 B illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 C illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 D illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 E illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 F illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 G illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 H illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 I illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 J illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 K illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 L illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 4 M illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1;
Fig. 5 is the sectional view of the 1st variation that the lit-par-lit structure of balanced-unbalanced transformer in execution mode 1 is shown;
Fig. 6 A illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 6 B illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 6 C illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 6 D illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 6 E illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 6 F illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 6 G illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 6 H is the figure that an example of the method for manufacturing the balanced-unbalanced transformer in the 1st variation is shown;
Fig. 6 I illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 6 J illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 6 K illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 6 L illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation;
Fig. 7 is the sectional view of the 2nd variation that the lit-par-lit structure of balanced-unbalanced transformer in execution mode 1 is shown;
Fig. 8 is the sectional view of the 3rd variation that the lit-par-lit structure of balanced-unbalanced transformer in execution mode 1 is shown;
Fig. 9 is the sectional view of the 4th variation that the lit-par-lit structure of balanced-unbalanced transformer in execution mode 1 is shown;
Figure 10 is the plane graph that the balanced-unbalanced transformer in embodiment of the present invention 2 is shown;
Figure 11 is the plane graph that the balanced-unbalanced transformer in embodiment of the present invention 3 is shown;
Figure 12 is the plane graph that the balanced-unbalanced transformer in embodiment of the present invention 4 is shown;
Figure 13 is the sectional view that the structure of the balanced-unbalanced transformer in comparative example 1 is shown;
Figure 14 is the plane graph of balanced-unbalanced transformer in comparative example 1;
Figure 15 is the plane graph of balanced-unbalanced transformer in comparative example 2;
Figure 16 A is the figure that the evaluation result of embodiment 1, comparative example 1 and comparative example 2 is shown;
Figure 16 B is the figure that the evaluation result of embodiment 1, comparative example 1 and comparative example 2 is shown;
Figure 16 C is the figure that the evaluation result of embodiment 1, comparative example 1 and comparative example 2 is shown;
Figure 16 D is the figure that the evaluation result of embodiment 1, comparative example 1 and comparative example 2 is shown;
Figure 17 A is the figure that the evaluation result of embodiment 2 and comparative example 1 is shown;
Figure 17 B is the figure that the evaluation result of embodiment 2 and comparative example 1 is shown;
Figure 17 C is the figure that the evaluation result of embodiment 2 and comparative example 1 is shown;
Figure 17 D is the figure that the evaluation result of embodiment 2 and comparative example 1 is shown;
Figure 18 A is the figure that the evaluation result of embodiment 3 and comparative example 1 is shown;
Figure 18 B is the figure that the evaluation result of embodiment 3 and comparative example 1 is shown;
Figure 18 C is the figure that the evaluation result of embodiment 3 and comparative example 1 is shown;
Figure 18 D is the figure that the evaluation result of embodiment 3 and comparative example 1 is shown;
Figure 19 A is the figure that the evaluation result of embodiment 4 and comparative example 1 is shown;
Figure 19 B is the figure that the evaluation result of embodiment 4 and comparative example 1 is shown;
Figure 19 C is the figure that the evaluation result of embodiment 4 and comparative example 1 is shown;
Figure 19 D is the figure that the evaluation result of embodiment 4 and comparative example 1 is shown;
Figure 20 A is the figure that the evaluation result of embodiment 1～embodiment 4 and comparative example 1 is shown;
Figure 20 B is the figure that the evaluation result of embodiment 1～embodiment 4 and comparative example 1 is shown;
Figure 20 C is the figure that the evaluation result of embodiment 1～embodiment 4 and comparative example 1 is shown;
Figure 20 D is the figure that the evaluation result of embodiment 1～embodiment 4 and comparative example 1 is shown.
Embodiment
Fig. 1 is the circuit diagram that the equivalent electric circuit of stacked structure type balanced-unbalanced transformer in embodiment of the present invention 1 is shown.Lit-par-lit structure type balanced-unbalanced transformer (hereinafter, being called if necessary balanced-unbalanced transformer) the 1st, LC type balanced-unbalanced transformer.LC type balanced-unbalanced transformer is by combining each by L(coil) and C(capacitor) low pass filter (LPF) of formation and the element that high pass filter (HPF) is changed balanced signal and unbalanced signal mutually.Unbalanced signal is the signal using earth potential as reference potential.Balanced signal by two each other phase difference be the signal that approximately 180 degree (π) and amplitude signals about equally form.
In the present embodiment, the high pass filter 7 that balanced-unbalanced transformer 1 comprises uneven terminal the 2, the 1st balanced terminals 3A, the 2nd balanced terminals 3B, has the low pass filter 6 of the 1st coil 4A and the 1st capacitor 5A and have the 2nd coil 4B and the 2nd capacitor 5B.Balanced-unbalanced transformer 1 also comprises earth terminal 8.Earth terminal 8 is connected in ground GND.Uneven terminal 2 input and output unbalanced signals.The 1st balanced terminals 3A and the equal input and output balanced signal of the 2nd balanced terminals 3B.Low pass filter 6 is arranged between uneven terminal 2 and the 1st balanced terminals 3A.High pass filter 7 is arranged between uneven terminal 2 and the 2nd balanced terminals 3B.
About low pass filter 6, between uneven terminal 2 and the 1st balanced terminals 3A, be connected with the 1st coil 4A, and be connected with the 1st capacitor 5A between the 1st balanced terminals 3A and earth terminal 8.That is, the 1st coil 4A is with respect to the 1st signal flowing between uneven terminal 2 and the 1st balanced terminals 3A for connecting, and the 1st capacitor 5A is parallel connection with respect to the 1st signal.With regard to high pass filter 7, between uneven terminal 2 and the 2nd balanced terminals 3B, be connected with the 2nd capacitor 5B, and be connected with the 2nd coil 4B between the 2nd balanced terminals 3B and earth terminal 8.That is, the 2nd coil 4B be in parallel with respect to the 2nd signal flowing between uneven terminal 2 and the 2nd balanced terminals 3B, and the 2nd capacitor 5B is to connect with respect to the 2nd signal.
Fig. 2 is the sectional view that the structure of balanced-unbalanced transformer in execution mode 1 is shown.Balanced-unbalanced transformer 1 comprises duplexer 10.Duplexer 10 comprises and is layered in a plurality of layers comprising on substrate with a plurality of conductor layers of conductive pattern and a plurality of insulating barriers, and above-mentioned low pass filter 6 and high pass filter 7.In the present embodiment, the stacked direction of duplexer 10 is directions (direction shown in arrow S Fig. 2) that the surperficial 11S that is formed with conductor layer and insulating barrier from substrate 11 leaves.
Have, in this manual, " from stacked direction " refers to again, the direction of the lamination surface perpendicular to duplexer as shown in the arrow S of Fig. 2, or see the situation of duplexer along the direction of piling up each layer, for example situation of the vertical view of duplexer.In addition, " on stacked direction " refers to, perpendicular to lamination surface, cutting off the situation of each layer of accumulation of seeing on the cross section (cross section as shown in Figure 2) of duplexer, and " on stacked direction, be configured in the same area of duplexer " and refer to, on such cross section, be configured in the region in equal height (same level position).
The 1st conductor layer 13, intermediate conductor layer 15, the 2nd conductor layer the 17, the 3rd conductor layer the 19, the 4th conductor layer 21 are equivalent to a plurality of conductor layers.These conductor layers are conductor layers of copper, silver etc., and form the pattern (conductive pattern) such as Wiring pattern or terminal patterns etc.The 1st conductor layer 13 has becomes the 1st coil-conductor 13LA of the 1st coil 4A, become the 2nd coil-conductor 13LB, the 1st capacitor substrate lateral electrode 13CA that becomes an electrode of the 1st capacitor 5A, the 2nd capacitor substrate lateral electrode 13CB of an electrode that becomes the 2nd capacitor 5B and the terminal conductor 13T that becomes uneven terminal shown in Fig. 12 and earth terminal 8 etc. of the 2nd coil 4B.Intermediate conductor layer 15 has the 2nd capacitor counter electrode 15CB of another electrode that becomes the 1st capacitor counter electrode 15CA of another electrode of the 1st capacitor 5A and become the 2nd capacitor 5B.
The terminal conductor 17T that the 2nd conductor layer 17 has becomes the 1st coil-conductor 17LA of the 1st coil 4A, become the 2nd coil-conductor 17LB of the 2nd coil 4B, the 1st electrode for capacitors 17CA being connected with the 1st capacitor counter electrode 15CA, the 2nd electrode for capacitors 17CB being connected with the 2nd capacitor counter electrode 15CB and become the uneven terminal 2 shown in Fig. 1 and earth terminal 8 etc.The terminal conductor 19T that the 3rd conductor layer 19 has becomes the 1st coil-conductor 19LA of the 1st coil 4A, become the 2nd coil-conductor 19LB of the 2nd coil 4B, the 1st electrode for capacitors 19CA being connected with the 1st electrode for capacitors 17CA, the 2nd electrode for capacitors 19CB being connected with the 2nd electrode for capacitors 17CB and become the uneven terminal 2 shown in Fig. 1 and earth terminal 8 etc.The 4th conductor layer 21 has for taking the uneven terminal 2 shown in Fig. 1 or earth terminal 8 out of terminal conductor 21T to duplexer 10 surfaces.Terminal has terminal coating 22 by the surface coverage of conductor 21T.Terminal is outstanding from the surface of duplexer 10 with conductor 21T, becomes uneven terminal the 2, the 1st balanced terminals 3A, the 2nd balanced terminals 3B and earth terminal 8.
The 1st coil-conductor 13LA of the 1st conductor layer 13 and the 1st coil-conductor 17LA of the 2nd conductor layer 17 are connected to each other via through hole (via) 23A.Similarly, the 2nd coil-conductor 13LB of the 1st conductor layer 13 and the 2nd coil-conductor 17LB of the 2nd conductor layer 17 are connected to each other via through hole 23B.In addition, the 1st coil-conductor 17LA of the 2nd conductor layer 17 and the 1st coil-conductor 19LA of the 3rd conductor layer 19 are connected to each other via through hole 24A.Similarly, the 2nd coil-conductor 17LB of the 2nd conductor layer 17 and the 2nd coil-conductor 19LB of the 3rd conductor layer 19 are connected to each other via through hole 24B.The 1st electrode for capacitors 17CA of the 2nd conductor layer 17 and the 1st electrode for capacitors 19CA of the 3rd conductor layer 19 are connected to each other via through hole 25A, and the 2nd electrode for capacitors 17CB of the 2nd conductor layer 17 and the 2nd electrode for capacitors 19CB of the 3rd conductor layer 19 are connected to each other via through hole 25B.For terminal, conductor 17T, 19T and 21T are connected in the 2nd conductor layer the 17, the 3rd conductor layer 19 and the 4th conductor layer 21.
The 1st insulating barrier 16, dielectric layer 14, the 2nd insulating barrier 18 and the 3rd insulating barrier 20 are equivalent to insulating barrier.The 1st insulating barrier the 16, the 2nd insulating barrier 18 and the 3rd insulating barrier 20 are made by insulating material.As insulating material, for example, use polyimides or epoxy resin.As the material of dielectric layer 14, use silicon nitride (SiN) etc.Dielectric layer 14 is inserted between the 1st conductor layer 13 and intermediate conductor layer 15 so that both are electrically isolated from one.In addition, dielectric layer 14 is inserted between the 1st capacitor substrate lateral electrode 13CA and the 1st capacitor counter electrode 15CA and between the 2nd capacitor substrate lateral electrode 13CB and the 2nd capacitor counter electrode 15CB, jointly to form the 1st capacitor 5A and the 2nd capacitor 5B with these elements.The 1st insulating barrier 16 is inserted between dielectric layer 14 and the 2nd conductor layer 17 so that both are electrically isolated from one.The 1st insulating barrier 16 has via through hole 23A and 23B and the peristome that makes between the 1st conductor layer 13 and the 2nd conductor layer 17 and make to be electrically connected between intermediate conductor layer 15 and the 2nd conductor layer 17.The 2nd insulating barrier 18 is inserted between the 2nd conductor layer 17 and the 3rd conductor layer 19 so that both are electrically isolated from one.The 2nd insulating barrier 18 has makes the peristome that is electrically connected between the 3rd conductor layer 19 and the 2nd conductor layer 17 via through hole 24A, 25A, 24B and 25B.The 3rd insulating barrier 20 covers the surface of the 3rd conductor layer 19, comes from the physical damnification of product outside to protect it to avoid.The duplexer 10 of balanced-unbalanced transformer 1 has structure as above.Next, the planar configuration of each conductor layer of balanced-unbalanced transformer 1 will be described in detail.
Fig. 3 A～Fig. 3 E is the plane graph that each conductor layer of balanced-unbalanced transformer in execution mode 1 is shown.As shown in Figure 3A, the terminal conductor 13T that the 1st conductor layer 13 has the 1st coil-conductor 13LA, the 2nd coil-conductor 13LB, the 1st capacitor substrate lateral electrode 13CA, the 2nd capacitor substrate lateral electrode 13CB and becomes uneven terminal the 2, the 1st balanced terminals 3A, the 2nd balanced terminals 3B and earth terminal 8.The 1st coil-conductor 13LA and the 1st capacitor substrate lateral electrode 13CA form a part for low pass filter 6, and a part for the 2nd coil-conductor 13LB and the 2nd capacitor substrate lateral electrode 13CB formation high pass filter 7.For the 1st coil-conductor 13LA in the 1st conductor layer 13 and the 2nd coil-conductor 13LB, width or the number of turn do not limit, and can be identical or different between two coil-conductor 13LA and 13LB.In the 1st conductor layer 13, the 1st capacitor substrate lateral electrode 13CA and the 2nd capacitor substrate lateral electrode 13CB are arranged in the region that is different from the 1st coil-conductor 13LA and the 2nd coil-conductor 13LB.
The 1st coil-conductor 13LA of low pass filter 6 sides is connected to uneven terminal 2 and through hole 23A.The 2nd coil-conductor 13LB of high pass filter 7 sides is connected to earth terminal 8 and through hole 23B.The 1st capacitor substrate lateral electrode 13CA of low pass filter 6 sides is connected with earth terminal 8, and the 2nd capacitor substrate lateral electrode 13CB of high pass filter 7 sides is connected with uneven terminal 2.It is upper that uneven terminal 2, the 1st balanced terminals 3A, the 2nd balanced terminals 3B and earth terminal 8 are connected to the conductor 13T of the terminal shown in Fig. 3 A～Fig. 3 E, 17T, 19T and 21T, and they are configured in each conductor layer in an identical manner.
As shown in Figure 3 B, intermediate conductor layer 15 has the 1st capacitor counter electrode 15CA of low pass filter 6 sides, the 2nd capacitor counter electrode 15CB and the terminal conductor 17T of high filter 7 sides between uneven terminal 2 and earth terminal 8.As shown in Figure 3 C, the 2nd conductor layer 17 has the 1st coil-conductor 17LA, the 2nd coil-conductor 17LB, the 1st electrode for capacitors 17CA, the 2nd electrode for capacitors 17CB and terminal conductor 17T.The 1st coil-conductor 17LA is connected with the 1st coil-conductor 13LA of the 1st conductor layer 13 via through hole 23A.The 2nd coil-conductor 17LB is connected with the 2nd coil-conductor 13LB of the 1st conductor layer 13 via through hole 23B.The 1st coil-conductor 17LA is connected in through hole 24A, and the 2nd coil-conductor 17LB is connected in through hole 24B.Equally in the 2nd conductor layer 17, for the 1st coil-conductor 17LA and the 2nd coil-conductor 17LB, width and the number of turn do not limit, and can be identical or different between two coil-conductor 17LA and 17LB.In the 2nd conductor layer 17, the 1st electrode for capacitors 17CA and the 2nd electrode for capacitors 17CB arrange and are different from the region of the 1st coil-conductor 17LA and the 2nd coil-conductor 17LB.
As shown in Figure 3 D, the 3rd conductor layer 19 has the 1st coil-conductor 19LA, the 2nd coil-conductor 19LB, the 1st electrode for capacitors 19CA, the 2nd electrode for capacitors 19CB and terminal conductor 19T.The 1st coil-conductor 19LA is connected with the 1st coil-conductor 17LA of the 2nd conductor layer 17 via through hole 24A.The 2nd coil-conductor 19LB is connected with the 2nd coil-conductor 17LB of the 2nd conductor layer 17 via through hole 24B.The 1st electrode for capacitors 19CA is through through hole 25A as shown in Figure 2 and be connected with the 1st electrode for capacitors 17CA of the 2nd conductor layer 17, and the 2nd electrode for capacitors 19CB is through through hole 25B as shown in Figure 2 and be connected with the 2nd electrode for capacitors 17CB of the 2nd conductor layer 17.
The terminal that becomes the 1st balanced terminals 3A is connected to each other via distribution 19PA with the 1st electrode for capacitors 19CA of conductor 19T and low pass filter 6 sides.The 1st coil-conductor 19LA of low pass filter 6 sides is connected with distribution 19PA.The terminal that becomes the 2nd balanced terminals 3B is connected to each other via distribution 19PB with the 2nd electrode for capacitors 19CB of conductor 19T and high pass filter 7 sides.The 2nd coil-conductor 19LB of high pass filter 7 sides is connected with distribution 19PB.Equally, in the 3rd conductor layer 19, for the 1st coil-conductor 19LA and the 2nd coil-conductor 19LB, width and the number of turn do not limit, and can be identical or different between two coil-conductor 19LA and 19LB.In the 3rd conductor layer 19, complete the 1st coil 4A of low pass filter 6 and the 2nd coil 4B of high pass filter 7.Then, as shown in Fig. 3 E, in the 4th conductor layer 21, terminal becomes external connection terminals with conductor 21T, thereby completes the balanced-unbalanced transformer 1 of the equivalent electric circuit shown in pie graph 1.
By such structure, in balanced-unbalanced transformer 1, when seeing from stacked direction, the 1st capacitor 5A and the 2nd capacitor 5B are configured in the region that is different from the 1st coil 4A and the 2nd coil 4B.Therefore, can reduce the 1st capacitor 5A and the 2nd capacitor 5B impact on the magnetic field being produced by the 1st coil 4A and the 2nd coil 4B.In balanced-unbalanced transformer 1, the 1st capacitor 5A is configured in the region identical with the 2nd coil 4B with the 1st coil 4A with the 2nd capacitor 5B on stacked direction.Therefore, can realize the thinning (reducing the size on stacked direction) of balanced-unbalanced transformer 1.Consequently, the electrical characteristics of balanced-unbalanced transformer 1 have been improved.Next, the example of the method for manufacturing balanced-unbalanced transformer 1 is described.
Fig. 4 A～Fig. 4 M illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in execution mode 1.First, as shown in Figure 4 A, prepared substrate 11.Then, as shown in Figure 4 B, on the surface of substrate 11, form smooth layer 12.Afterwards, as shown in Figure 4 C, on the surface of substrate 11, be more specifically on the surface of smooth layer 12, to form the 1st conductor layer 13.The 1st conductor layer 13 can be formed by for example copper facing (Cu).Then, as shown in Figure 4 D, form the dielectric layer 14 of the capacity that determines the 1st capacitor 5A and the 2nd capacitor 5B.Dielectric layer 14 is for example to make the mode of silicon nitride (SiN) deposition form by chemical vapor deposition (CVD).
Then, as shown in Figure 4 E, on the position of lip-deep the 1st conductor layer 13 corresponding to the part as formation the 1st capacitor 5A and the 2nd capacitor 5B of dielectric layer 14, form intermediate conductor layer 15.Intermediate conductor layer 15 can for example be formed by copper facing (Cu).So, the 1st conductor layer 13, dielectric layer 14 and intermediate conductor layer 15 form the 1st capacitor 5A and the 2nd capacitor 5B.Then,, as shown in Fig. 4 F, on the surface of dielectric layer 14, form the 1st insulating barrier 16.The 1st insulating barrier 16 for example deposits the mode of polyimides on the necessary site that is engraved in dielectric layer 14 surfaces and forms in order to using up.
Then, as shown in Figure 4 G, in through hole (through-hole) operation, by being connected and dielectric layer 14(SiN film in the part on the coupling part of the 1st coil 4A and the 2nd coil 4B and that becoming uneven terminal the 2, the 1st balanced terminals 3A, the 2nd balanced terminals 3B and earth terminal 8 that forms between the 1st conductor layer 13 and the 2nd conductor layer 17) be removed.Then,, as shown in Fig. 4 H, on the surface of the 1st insulating barrier 16, form the 2nd conductor layer 17.The 2nd conductor layer 17 is for example formed by copper facing (Cu).
Then,, as shown in Fig. 4 I, on the surface of the 2nd conductor layer 17, form the 2nd insulating barrier 18.The 2nd insulating barrier 18 for example forms in order to using up the mode that deposits polyimides on the essential site that is engraved in the 2nd conductor layer 17 surfaces.Then,, as shown in Fig. 4 J, on the surface of the 2nd insulating barrier 18, form the 3rd conductor layer 19.The 3rd conductor layer 19 is for example formed by copper facing (Cu).Then, as shown in Figure 4 K, on the surface of the 3rd conductor layer 19, form the 3rd insulating barrier (cover layer) 20.The 3rd insulating barrier 20 is for example formed by polyimides.Then,, as shown in Fig. 4 L, become the 4th conductor layer 21 of uneven terminal the 2, the 1st balanced terminals 3A, the 2nd balanced terminals 3B and earth terminal 8.The 4th conductor layer 21 is for example formed by copper facing (Cu).Finally, as shown in Fig. 4 M, with terminal coating 22, cover the surface of the 4th conductor layer 21, thereby complete balanced-unbalanced transformer 1.Terminal coating 22 can form by nickel (Ni) gold (Au) chemical plating.Notice, manufacture the method for balanced-unbalanced transformer 1 and the material of balanced-unbalanced transformer 1 and be not limited to above-mentioned (example is below also like this).
the 1st variation of lit-par-lit structure
Fig. 5 is the sectional view of the 1st variation of the lit-par-lit structure of balanced-unbalanced transformer in execution mode 1.The difference of balanced-unbalanced transformer 1a shown in Fig. 5 is: there is no intermediate conductor layer 15(that in execution mode 1, balanced-unbalanced transformer 1 has referring to Fig. 2); By the 1st capacitor common electrode 17A, formed the 1st capacitor counter electrode 15CA and the 1st electrode for capacitors 17CA of balanced-unbalanced transformer 1, and by the 2nd capacitor common electrode 17B, formed the 2nd capacitor counter electrode 15CB and the 2nd electrode for capacitors 17CB of balanced-unbalanced transformer 1.In balanced-unbalanced transformer 1, form the 1st capacitor counter electrode 15CA and the 2nd capacitor counter electrode 15CB, then on each surface, form the 1st electrode for capacitors 17CA and the 2nd electrode for capacitors 17CB.In balanced-unbalanced transformer 1a, as described later, the 1st capacitor common electrode 17A and the 2nd capacitor common electrode 17B form in single operation.The 1st capacitor common electrode 17A has the function of the 1st capacitor counter electrode 15CA and the 1st electrode for capacitors 17CA in balanced-unbalanced transformer 1, and the 2nd capacitor common electrode 17B has the function of the 2nd capacitor counter electrode 15CB and the 2nd electrode for capacitors 17CB in balanced-unbalanced transformer 1.
The 1st coil 4A of low pass filter 6 sides consists of the 1st coil-conductor 13LA, the 2nd coil-conductor 17LA, the 3rd coil-conductor 19LA, through hole 23A, through hole 24A, the 1st insulating barrier the 16, the 2nd insulating barrier 18 and the 3rd insulating barrier 20 of low pass filter 6 sides.The 2nd coil 4B of high pass filter 7 sides consists of the 2nd coil-conductor 13LB, the 2nd coil-conductor 17LB, the 3rd coil-conductor 19LB, through hole 23B, through hole 24B, the 1st insulating barrier the 16, the 2nd insulating barrier 18 and the 3rd insulating barrier 20 of high pass filter 7 sides.The 1st capacitor 5A of low pass filter 6 sides has the 1st capacitor substrate lateral electrode 13CA, dielectric layer 14 and the 1st capacitor common electrode 17A.The 2nd capacitor 5B of high pass filter 7 sides has the 2nd capacitor substrate lateral electrode 13CB, dielectric layer 14 and the 2nd capacitor common electrode 17B.Portion of terminal consists of conductor 13T, 17T, 19T and 21T for terminal and terminal coating 22.The example of the method for manufacturing balanced-unbalanced transformer 1a then, is described.
Fig. 6 A～Fig. 6 L illustrates the figure that manufactures the example of the method for balanced-unbalanced transformer in the 1st variation.Until the operation that dielectric layer 14 as shown in Figure 6 D forms is identical with the method for balanced-unbalanced transformer in manufacture execution mode 1, thereby the description thereof will be omitted.After forming dielectric layer 14, as shown in Fig. 6 E, except corresponding to as form the 1st capacitor 5A and the 2nd capacitor 5B part the 1st conductor layer 13 surface location and corresponding to as forming on the surface of the dielectric layer 14 position of the 1st conductor layer 13 of part of uneven terminal the 2, the 1st balanced terminals 3A, the 2nd balanced terminals 3B and earth terminal 8, form the 1st insulating barrier 16.The 1st insulating barrier 16 for example deposits the mode of polyimides on the essential site that is engraved in dielectric layer 14 surfaces and forms in order to using up.
Then, as shown in Fig. 6 F, in through hole operation, by being connected between the 1st conductor layer 13 and the 2nd conductor layer 17 formed dielectric layer 14 on the coupling part of the 1st coil 4A and the 2nd coil 4B and that becoming in the part of uneven terminal the 2, the 1st balanced terminals 3A, the 2nd balanced terminals 3B and earth terminal 8 be removed.Then, as shown in Figure 6 G, on the surface of the 1st insulating barrier 16 and be opened on the surface of the 1st conductor layer 13 of dielectric layer 14 and form the 2nd conductor layer 17.The 2nd conductor layer 17 becomes the 1st capacitor common electrode 17A shown in Fig. 5 and the 2nd capacitor common electrode 17B.Subsequently, as shown in Fig. 6 H, on the surface of the 2nd conductor layer 17, form the 2nd insulating barrier 18.Subsequently, carry out each operation shown in Fig. 6 I～Fig. 6 L.These operations are identical with the operation in Fig. 4 J～Fig. 4 M.
In manufacturing the 1st variation in the method for balanced-unbalanced transformer, in the single operation of the 2nd conductor layer 17 of the formation shown in Fig. 6 G, the 1st capacitor counter electrode 15CA of the balanced-unbalanced transformer 1 1st capacitor common electrode 17A suitable with the 1st electrode for capacitors 17CA in formation and execution mode 1.Form in the same way the 2nd capacitor common electrode 17B suitable with the 2nd electrode for capacitors 17CB with the 2nd capacitor counter electrode 15CB of balanced-unbalanced transformer 1.So, the method for manufacturing balanced-unbalanced transformer in the 1st variation need to be in not manufacturing execution mode 1 form the operation of intermediate conductor layer 15 in the method for balanced-unbalanced transformer.Therefore, can reduce the operation of manufacturing balanced-unbalanced transformer 1.
the 2nd variation of lit-par-lit structure
Fig. 7 is the sectional view of the 2nd variation of the lit-par-lit structure of balanced-unbalanced transformer in execution mode 1.In the balanced-unbalanced transformer 1b shown in Fig. 7, when seeing from stacked direction, the 1st coil 4A of low pass filter 6 sides, the 2nd coil 4B of high pass filter 7 sides and the 1st capacitor 5A of low pass filter 6 sides and the 2nd capacitor 5B of high pass filter 7 sides are arranged in different regions.In balanced-unbalanced transformer 1b, the 1st capacitor 5A of low pass filter 6 sides and the 2nd capacitor 5B of high pass filter 7 sides are arranged in identical region on stacked direction.In addition, in balanced-unbalanced transformer 1b, when seeing from stacked direction, the 1st capacitor 5A and the 2nd capacitor 5B are arranged in region between the 1st coil 4A of low pass filter 6 sides and the 2nd coil 4B of high pass filter 7 sides and that be different from the region that forms coil 4A and coil 4B.
The 1st coil 4A of low pass filter 6 sides is by the 1st coil-conductor 13LA, the 2nd coil-conductor 17LA, the 3rd coil-conductor 19LA, through hole 23A and the through hole 24A of low pass filter 6 sides, and the 1st insulating barrier 16A of low pass filter 6 sides, the 2nd insulating barrier 18A and the 3rd insulating barrier 20A form.The 2nd coil 4B of high pass filter 7 sides is by the 1st coil-conductor 13LB, the 2nd coil-conductor 17LB, the 3rd coil-conductor 19LB, through hole 23B and the through hole 24B of high pass filter 7 sides, and the 1st insulating barrier 16B of high pass filter 7 sides, the 2nd insulating barrier 18B and the 3rd insulating barrier 20B form.The 1st capacitor 5A of low pass filter 6 sides is consisted of the 1st capacitor substrate lateral electrode 13CA, the 1st capacitor counter electrode 15CA and dielectric layer 14.The 2nd capacitor 5B of high pass filter 7 sides is consisted of the 2nd capacitor substrate lateral electrode 13CB, the 2nd capacitor counter electrode 15CB and dielectric layer 14.Portion of terminal consists of conductor 13TA, 17TA, 19TA, 13TC, 15TC, 13TB, 17TB, 19TB and 21T for terminal and terminal coating 22.
For the concavo-convex so that surface of the smooth layer 12 that the surperficial 11S of substrate 11 is level and smooth of landfill, the lamination order of balanced-unbalanced transformer 1b is that the 1st coil 4A of low pass filter 6 sides is, the 2nd capacitor 5B of the 1st capacitor 5A of low pass filter 6 sides and high pass filter 7 sides and the 2nd coil 4B of 7 sides of high pass filter afterwards.By this way, form the lit-par-lit structure in the 2nd variation.
In balanced-unbalanced transformer 1b, when seeing from stacked direction, the 1st capacitor 5A and the 2nd capacitor 5B are arranged in the region that is different from the 1st coil 4A and the 2nd coil 4B.By such configuration, compare with the equitant prior art structure in formation region of coil and capacitor when seeing from stacked direction, can reduce the 1st capacitor 5A and the 2nd capacitor 5B impact on the magnetic field being produced by the 1st coil 4A and the 2nd coil 4B.Therefore, similar to the balanced-unbalanced transformer 1 in the 1st execution mode, the electrical characteristics of balanced-unbalanced transformer 1b also can improve.In balanced-unbalanced transformer 1b, the 1st capacitor 5A and the 2nd capacitor 5B are arranged in identical region on stacked direction, and are arranged in regions between the 1st coil 4A and the 2nd coil 4B and different with the region that forms coil 4A and 4B.
the 3rd variation of lit-par-lit structure
Fig. 8 is the sectional view of the 3rd variation of the lit-par-lit structure of balanced-unbalanced transformer in execution mode 1.In balanced-unbalanced transformer 1c, the 1st capacitor substrate lateral electrode 13CA of the 1st capacitor 5A and the 2nd capacitor substrate lateral electrode 13CB of the 2nd capacitor 5B are formed in the layer different with the 2nd coil-conductor 13LB from the 1st coil-conductor 13LA.Therefore,, in balanced-unbalanced transformer 1c, the 1st capacitor 5A is arranged in region inner side and different from the region that forms coil 4A and 4B of the 1st coil 4A and the 2nd coil 4B with the 2nd capacitor 5B.That is, in balanced-unbalanced transformer 1c, when from stacked direction, the 1st capacitor 5A and the 2nd capacitor 5B be arranged in the 1st coil 4A and the 2nd coil 4B between.In addition, in balanced-unbalanced transformer 1c, the 1st capacitor 5A and the 2nd capacitor 5B are arranged in identical region on stacked direction.In addition,, in balanced-unbalanced transformer 1c, when seeing from stacked direction, the 1st capacitor 5A and the 2nd capacitor 5B are arranged in the region that is different from the 1st coil 4A and the 2nd coil 4B.In balanced-unbalanced transformer 1c, the 1st coil 4A of low pass filter 6 sides and the 2nd coil 4B of high pass filter 7 sides are arranged in identical region on stacked direction.
The 1st coil 4A of low pass filter 6 sides is by the 1st coil-conductor 13LA, the 2nd coil-conductor 17LA, the 3rd coil-conductor 19LA, through hole 23A and the through hole 24A of low pass filter 6 sides, and the 1st insulating barrier 16 of low pass filter 6 sides, the 2nd insulating barrier 18c and the 3rd insulating barrier 20 of the 2nd insulating barrier 18a of dielectric layer side, the 2nd insulating barrier 18b between capacitor and coil, coil sides form.The 2nd coil 4B of high pass filter 7 sides is by the 2nd coil-conductor 13LB, the 2nd coil-conductor 17LB, the 3rd coil-conductor 19LB, through hole 23B and the through hole 24B of high pass filter 7 sides, and the 1st insulating barrier 16 of high pass filter 7 sides, the 2nd insulating barrier 18c and the 3rd insulating barrier 20 of the 2nd insulating barrier 18a of dielectric layer side, the 2nd insulating barrier 18b between capacitor and coil, coil sides form.
The 1st capacitor 5A of low pass filter 6 sides consists of the 1st capacitor substrate lateral electrode 13CA, the 1st capacitor counter electrode 15CA and dielectric layer 14.The 2nd capacitor 5B of high pass filter 7 sides consists of the 2nd capacitor substrate lateral electrode 13CB, the 2nd capacitor counter electrode 15CB and dielectric layer 14.Portion of terminal consists of conductor 13T, 13CT, 15T, 17TA, 19T, 21T and terminal coating 22 for terminal.Be with the significant difference of layered manner in execution mode 1, increase the stacked size of through hole 23A and through hole 23B, thereby on stacked direction, form the 1st coil 4A of low pass filter 6 sides and the 2nd coil 4B of high pass filter 7 sides largelyr.Such structure can form by common photoetching and galvanoplastic.By this way, form the lit-par-lit structure of the 3rd variation.
In balanced-unbalanced transformer 1c, when from stacked direction, the 1st capacitor 5A and the 2nd capacitor 5B are arranged in the region that is different from the 1st coil 4A and the 2nd coil 4B.By such configuration, compare with the equitant prior art structure in formation region of coil and capacitor when seeing from stacked direction, can reduce the 1st capacitor 5A and the 2nd capacitor 5B impact on the magnetic field being produced by the 1st coil 4A and the 2nd coil 4B.Therefore, similar to the balanced-unbalanced transformer 1 of execution mode 1, the electrical characteristics of balanced-unbalanced transformer 1c also can improve.In balanced-unbalanced transformer 1c, the 1st capacitor 5A and the 2nd capacitor 5B are arranged in identical region on stacked direction, and when from stacked direction, be arranged in region inner side and different from the region that forms coil 4A and 4B of the 1st coil 4A and the 2nd coil 4B.
the 4th variation of lit-par-lit structure
Fig. 9 is the sectional view of the 4th variation of the lit-par-lit structure of balanced-unbalanced transformer in execution mode 1.In balanced-unbalanced transformer 1d, when from stacked direction, the 1st capacitor 5A and the 2nd capacitor 5B are formed in the region that is different from the 1st coil 4A and the 2nd coil 4B.In balanced-unbalanced transformer 1d, the 2nd capacitor 5B of the 1st coil 4A of low pass filter 6 sides, the 1st capacitor 5A of low pass filter 6 sides and high pass filter 7 sides is arranged in identical region on stacked direction.Only there is the 2nd coil 4B of high pass filter 7 sides on stacked direction, to be arranged in the region that is different from the 1st coil 4A, the 1st capacitor 5A and the 2nd capacitor 5B.By this way, in balanced-unbalanced transformer 1d, when seeing from stacked direction, the 1st capacitor 5A and the 2nd capacitor 5B are arranged between the 1st coil 4A and the 2nd coil 4B.
In balanced-unbalanced transformer 1d, the 1st coil 4A of low pass filter 6 sides is by the 1st coil-conductor 13LA, the 2nd coil-conductor 17LA, the 3rd coil-conductor 19LA, through hole 23A and the through hole 24A of low pass filter 6 sides, and the 1st insulating barrier the 16, the 2nd insulating barrier 18A of low pass filter 6 sides and the 3rd insulating barrier 20A formation.The 2nd coil 4B of high pass filter 7 sides is by the 2nd coil-conductor 13LB, the 2nd coil-conductor 17LB, the 3rd coil-conductor 19LB, through hole 23B, the through hole 24B of high pass filter 7 sides, and the 1st insulating barrier 16B of high pass filter 7 sides, the 2nd insulating barrier 18B and the 3rd insulating barrier 20B formation.The 1st capacitor 5A of low pass filter 6 sides consists of the 1st capacitor substrate lateral electrode 13CA, the 1st capacitor counter electrode 15CA, the 1st electrode for capacitors 17CA and dielectric layer 14.The 2nd capacitor 5B of high pass filter 7 sides consists of the 2nd capacitor substrate lateral electrode 13CB, the 2nd capacitor counter electrode 15CB, the 2nd electrode for capacitors 17CB and dielectric layer 14.Portion of terminal consists of conductor 13TA, 15TA, 17TA, 19TA, 13TB, 17TB, 19TB and 21T for terminal and terminal coating 22.By this way, form the lit-par-lit structure of the 4th variation.
In balanced-unbalanced transformer 1d, when from stacked direction, the 1st capacitor 5A and the 2nd capacitor 5B are arranged in the region that is different from the 1st coil 4A and the 2nd coil 4B.By such configuration, compare with the equitant prior art structure in formation region of coil and capacitor when seeing from stacked direction, can reduce the 1st capacitor 5A and the 2nd capacitor 5B impact on the magnetic field being produced by the 1st coil 4A and the 2nd coil 4B.Therefore, similar to the balanced-unbalanced transformer 1 of execution mode 1, the electrical characteristics of balanced-unbalanced transformer 1d also can improve.In balanced-unbalanced transformer 1d, it is identical from the region that forms the 1st coil 4A and on stacked direction in the region different with the region that forms the 2nd coil 4B that the 1st capacitor 5A and the 2nd capacitor 5B are arranged on stacked direction.
Figure 10 is the plane graph of balanced-unbalanced transformer in embodiment of the present invention 2.In the balanced-unbalanced transformer 1A of execution mode 2, in plan view, when from stacked direction, it is different from balanced-unbalanced transformer 1 in execution mode 1 and variation thereof, 1a etc. that the 1st coil 4A, the 2nd coil 4B, the 1st capacitor 5A and the 2nd capacitor 5B are arranged to.Anticipate the 1st coil 4A shown in Figure 10, the 2nd coil 4B, the 1st capacitor 5A and the 2nd capacitor 5B mutually between position relationship in the plane.Therefore, the details of the lit-par-lit structure as shown in Fig. 3 A～Fig. 3 E is omitted and simplifies.
In balanced-unbalanced transformer 1A, the 1st capacitor 5A of low pass filter 6 sides is arranged between the 1st coil 4A of low pass filter 6 sides and the 2nd coil 4B of high pass filter 7 sides, and the 2nd capacitor 5B of high pass filter 7 sides is arranged between uneven terminal 2 and earth terminal 8.
Figure 11 is the plane graph of the balanced-unbalanced transformer in embodiment of the present invention 3.Identical with in execution mode 2 of the omission of lit-par-lit structure.In balanced-unbalanced transformer 1B, the 2nd capacitor 5B of high pass filter 7 sides is arranged between the 2nd coil 4B of high pass filter 7 sides and the 1st coil 4A of low pass filter 6 sides, and the 1st capacitor 5A of low pass filter 6 sides is arranged between uneven terminal 2 and earth terminal 8.
execution mode 4
Figure 12 is the plane graph of balanced-unbalanced transformer in embodiment of the present invention 4.The omission of lit-par-lit structure is with identical in execution mode 2 and 3.In balanced-unbalanced transformer 1C, the 2nd capacitor 5B of high pass filter 7 sides and the 1st capacitor 5A of low pass filter 6 sides are arranged between the 2nd coil 4B of high pass filter 7 sides and the 1st coil 4A of low pass filter 6 sides.
evaluate
The capacitor 5B of the capacitor 5A of low pass filter 6 sides and high pass filter 7 sides is evaluated the impact of electrical characteristics with respect to the position relationship of the 1st coil 4A of low pass filter 6 sides and the 2nd coil 4B of high pass filter 7 sides.Evaluation object is respectively balanced- unbalanced transformer 1,1A, 1B, the 1C in above-mentioned execution mode 1～execution mode 4, and comparative example 1 and the comparative example 2 described after a while.The balanced-unbalanced transformer of execution mode 1 is corresponding to embodiment 1, the balanced-unbalanced transformer of execution mode 2 is corresponding to embodiment 2, the balanced-unbalanced transformer of execution mode 3 is corresponding to embodiment 3, and the balanced-unbalanced transformer of execution mode 4 is corresponding to embodiment 4.
For evaluation, use computer simulation.2.5 dimension simulator SONNET are used as simulation softward.For embodiment 1～embodiment 4 and between the comparative example 1 and comparative example 2 described after a while, in each example, change the 1st capacitor 5A of low pass filter 6 sides and the 2nd capacitor 5B of high pass filter 7 sides with respect to the position relationship of the 1st coil 4A of low pass filter 6 sides and the 2nd coil 4B of high pass filter 7 sides, carry out the comparison of electrical characteristics.For this reason, in embodiment 1～embodiment 4, comparative example 1 and comparative example 2 each terminal of each coil and each conductor layer in position, configuration and carry out in shape identical setting.
As 4 characteristics evaluating the essential electrical characteristics of balanced-unbalanced transformer, insertion loss characteristic, phase difference characteristics, difference of vibration characteristic and reflection loss characteristic, be considered for evaluating.Target band is for being used in the 240MHz～2500MHz in WLAN (wireless local area network) (LAN) and bluetooth etc.Insertion loss characteristic represents transmission efficiency, thereby when loss value more approaches 0dB, characteristic is better.Phase difference characteristics is ideal when the phase difference of 2 balanced signals is 180deg., thereby characteristic is better when phase difference more approaches 180deg..Difference of vibration characteristic is desirable when the amplitude of 2 balanced signals is identical, thereby characteristic is better when difference of vibration more approaches 0dB.Reflection loss characteristic represents reflection efficiency, thereby characteristic is better when dB value is larger.Especially, because insertion loss is facilitated the saving of electric power, and that this is mobile electronic device is needed, so insertion loss is considered to most important electrical characteristics.
comparative example 1
Figure 13 is the sectional view that the structure of balanced-unbalanced transformer in comparative example 1 is shown.In balanced-unbalanced transformer 101, the 1st capacitor 105A of low pass filter 106 sides and the 2nd capacitor 105B of high pass filter 107 sides are configured to, when seeing from stacked direction, being overlapped in the region that the 1st coil 104A of low pass filter 106 sides and the coil 104B of high pass filter 107 sides arrange, is more specifically the region in coil aperture.This stems from similar prior art (quasi-conventional) structure.
In balanced-unbalanced transformer 101, the 1st coil 104A and the 1st capacitor 105A form low pass filter 106, the 2 coil 104B and the 2nd capacitor 105B forms high pass filter 107.Method for the manufacture of balanced-unbalanced transformer 101 is identical with the manufacture method in execution mode 1, except the 1st capacitor 105A and the 2nd capacitor 105B are formed on the region different with the 2nd formed region of coil 104B from the 1st coil 104A on stacked direction.The 1st capacitor 105A and the 2nd capacitor 105B are consisted of the I1 layer of conductor layer B1, conductor layer B2 and the SiN film between B1 layer and B2 layer.The 1st coil 104A and the 2nd coil 104B are by conductor layer M1, conductor layer M2, conductor layer M3, formed between insulating barrier I2 and the I3 of these interlayers and the physically impaired insulating barrier I4 that makes conductor layer M3 avoid coming from product outside.
Figure 14 is the plane graph of balanced-unbalanced transformer in comparative example 1.Balanced-unbalanced transformer 101 has the terminal of uneven terminal the 102, the 1st balanced terminals 103A, the 2nd balanced terminals 103B and earth terminal 108, there is the low pass filter 106 of the 1st coil 104A and the 1st capacitor 105A, and the high pass filter 107 with the 2nd coil 104B and the 2nd capacitor 105B.Notice, in Figure 14, be intended to illustrate the mutual position relationship in the plane of the 1st coil 104A, the 2nd coil 104B, the 1st capacitor 105A and the 2nd capacitor 105B.Therefore, the details of the lit-par-lit structure as shown in above-mentioned Fig. 3 A～Fig. 3 E is omitted and simplifies.The capability value of the 1st capacitor 105A and the 2nd capacitor 105B is configured to identical with embodiment 1～embodiment 4.In addition, be necessary by for make the thickness of the insulating barrier I2 of conductor layer B2 and conductor layer M1 isolation set for and embodiment 1～embodiment 4 the 1st coil 4A and the 1st capacitor 5A between in-plane distance and the in-plane between the 2nd coil and the 2nd capacitor apart from identical, to compare, therefore, the thickness of insulating barrier I2 be configured on stacked direction with the 1st coil 4A and the 1st capacitor 5A between in-plane distance identical.
comparative example 2
Figure 15 is the plane graph of balanced-unbalanced transformer in comparative example 2.Balanced-unbalanced transformer 101a has the terminal of uneven terminal the 102, the 1st balanced terminals 103A, the 2nd balanced terminals 103B and earth terminal 108, there is the low pass filter 106 of the 1st coil 104A and the 1st capacitor 105Aa, and the high pass filter 107 with the 2nd coil 104B and the 2nd capacitor 105Ba.In Figure 15, similar to Figure 14, be intended to illustrate the mutual position relationship in the plane of the 1st coil 104A, the 2nd coil 104B, the 1st capacitor 105Aa and the 2nd capacitor 105Ba.Therefore, the details of the lit-par-lit structure as shown in above-mentioned Fig. 3 A～Fig. 3 E is omitted and simplifies.
For the cross-sectional configuration of balanced-unbalanced transformer 101a, only increased the size of the 1st capacitor 105A and the 2nd capacitor 105B in comparative example 1.That is, only changed B1 and the area of B2 on in-plane of balanced-unbalanced transformer 101 in Figure 13, and other structures are identical with comparative example 1.In balanced-unbalanced transformer 101a, the capacitor that is different from comparative example 1, the 1 capacitor 105Aa and the 2nd capacitor 105Ba is not accommodated in respectively in the opening of the 1st coil 104A and the 2nd coil 104B.Yet it is identical with embodiment 1～embodiment 4 and comparative example 1 that the capability value of the 1st capacitor 105Aa and the 2nd capacitor 105Ba is configured to.In addition, similar to comparative example 1, for making the thickness of the insulating barrier I2 of conductor layer B2 and conductor layer M1 isolation, set on stacked direction with the 1st coil 4A and the 1st capacitor 5A between in-plane apart from identical.
the evaluation of embodiment 1
Figure 16 A～Figure 16 D is the figure that the evaluation result of embodiment 1, comparative example 1 and comparative example 2 is shown.In Figure 16 A～Figure 16 D, solid line represents the electrical characteristics of embodiment 1, and dotted line represents the electrical characteristics of comparative example 1, and dash line represents the electrical characteristics of comparative example 2.With regard to Figure 16 A～Figure 16 D, although for all insertion loss characteristics, difference of vibration characteristic and reflection loss characteristic, phase difference characteristics does not have significant difference, and embodiment 1 is better than comparative example 1 and comparative example 2.In addition, whole electrical characteristics of comparative example 2 all ratio in comparative example 1.Think that reason is, in comparative example 2, the size of the 1st capacitor 105Aa and the 2nd capacitor 105Ba is greater than the size of the 1st capacitor 105A and the 2nd capacitor 105B in comparative example 1.That is, result shows, in the LC lit-par-lit structure type balanced-unbalanced transformer of structure with comparative example 1 and comparative example 2, the size of capacitor is influential to electrical characteristics.
The evaluation result of embodiment 2～embodiment 4 and comparative example 1 is shown below.Than comparative example 2, the electrical characteristics of comparative example 1 are better to a certain extent.In addition, in comparative example 1, the 1st capacitor 105A of low pass filter 106 sides is configured to identical with the electrode area of the 1st capacitor 5A of low pass filter 6 sides in embodiment 2～embodiment 4 and the 2nd capacitor 5B of high pass filter 7 sides with the electrode area of the 2nd capacitor 105B of high pass filter 107 sides.Therefore, comparative example 1 and embodiment 2～embodiment's 4 relatively has a larger meaning.
the evaluation of embodiment 2
Figure 17 A～Figure 17 D is the figure that the evaluation result of embodiment 2 and comparative example 1 is shown.In Figure 17 A～Figure 17 D, solid line represents the electrical characteristics of embodiment 2, and dotted line represents the electrical characteristics of comparative example 1.With regard to Figure 17 A～Figure 17 D, although embodiment 2 will slightly be worse than comparative example 1 on phase difference, because embodiment 2 has improved the insertion loss that is considered to most important electrical characteristics, its comprehensive electrical characteristics are better.
the evaluation of embodiment 3
Figure 18 A～Figure 18 D is the figure that the evaluation result of embodiment 3 and comparative example 1 is shown.In Figure 18 A～Figure 18 D, solid line represents the electrical characteristics of embodiment 3, and dotted line represents the electrical characteristics of comparative example 1.With regard to Figure 18 A～Figure 18 D, all electrical characteristics of embodiment 3 are all better than comparative example 1.
the evaluation of embodiment 4
Figure 19 A～Figure 19 D is the figure that the evaluation result of embodiment 4 and comparative example 1 is shown.In Figure 19 A～Figure 19 D, solid line represents the electrical characteristics of embodiment 4, and dotted line represents the electrical characteristics of comparative example 1.With regard to Figure 19 A～Figure 19 D, all electrical characteristics of embodiment 4 are all better than comparative example 1.
comparison between embodiment 1～embodiment 4
Figure 20 A～Figure 20 D is the figure that the evaluation result of embodiment 1～embodiment 4 and comparative example 1 is shown.In Figure 20 A～Figure 20 D, with solid line, represent each electrical characteristics of embodiment 1, and represent embodiment 2 with dash line, with dotted line, represent embodiment 3, with chain line, represent embodiment 4, with thick line, represent comparative example 1.Result demonstration, embodiment 3 has best electrical characteristics.
The above results shows, forming the 1st capacitor 105A with the region forming the 1st coil 104A and the 2nd coil 104B of comparative example 1 and comparative example 2 compares with the structure of the 2nd capacitor 105B, in embodiment 1～embodiment 4, when see the structure that forms the 1st capacitor 5A and the 2nd capacitor 5B the region that Shi Yu formation the 1st coil 4A is different with the region of the 2nd coil 4B from stacked direction, produce the larger effect of improving electrical characteristics.In addition, in embodiment 1～embodiment 4, the 1st capacitor 5A is arranged in the region identical with the 2nd coil 4B with the 1st coil 4A with the 2nd capacitor 5B on stacked direction.Therefore, in embodiment 1～embodiment 4, be layered in the 1st coil 104A with the 1st capacitor 105A and the 2nd capacitor 105B and compare with comparative example 2 with the comparative example 1 on the 2nd coil 104B, can realize thinning (reducing the size on stacked direction).
In comparative example 1 and 2, when from stacked direction, the 1st capacitor 105A and the 2nd capacitor 105B are configured to and the region overlaid of arranging the 1st coil 104A and the 2nd coil 104B.Therefore, infer that the impact in the magnetic field producing for the 1st coil 104A and the 2nd coil 104B all conductors is up and down quite large.The fact that electrical characteristics further worsen in the larger comparative example 2 of the electrode size of the 1st capacitor 105A and the 2nd capacitor 105B has been confirmed this phenomenon.
In embodiment 1～embodiment 4, the 1st capacitor 5A is formed in the region different with the 2nd coil 4B from forming the 1st coil 4A with the 2nd capacitor 5B, and in duplexer, the 1st capacitor 5A is arranged in the region identical with the 2nd coil 4B with the 1st coil 4A with the 2nd capacitor 5B on stacked direction.Therefore, infer in embodiment 1～embodiment 4, because the configuration of the 1st capacitor 5A and the 2nd capacitor 5B only affects significantly by the magnetic field producing with the 1st coil 4A and the contiguous conductor of the 2nd coil 4B, therefore brought into play the effect in electrical characteristics improvement.Yet the advantageous effects producing in embodiment 1～embodiment 4 is not limited to this.
The invention is not restricted to above-mentioned execution mode, its variation and embodiment, in the situation that not changing the scope of the invention, can carry out various distortion.For example, the configuration of uneven terminal, the 1st balanced terminals, the 2nd balanced terminals and earth terminal is not limited to above-mentioned position.The multi-layer circuit structure that forms balanced-unbalanced transformer can have and is less than the above-mentioned number of plies.The 1st coil 4A and the 2nd coil 4B also can be individually formed in different conductor layers, or can only partly be formed in identical conductor layer.The 1st capacitor 5A can be arranged in the conductor layer identical with the 1st coil 4A or the 2nd coil 4B with at least one the electrode in the 2nd capacitor 5B, or the electrode of the 1st capacitor 5A and the 2nd capacitor 5B can be arranged in the conductor layer different from the conductor layer that forms the 1st coil 4A and the 2nd coil 4B.The conductor layer that is formed with the electrode of the 1st capacitor 5A and the 2nd capacitor 5B is not limited to the 1st conductor layer and intermediate conductor layer, the 1st conductor layer and the 2nd conductor layer that can be identical by the conductor with the 1st coil 4A and the 2nd coil 4B form, or consist of the 2nd conductor layer and the 3rd conductor layer.Obviously, this structure can have the conductor layer of reverse order on insulating properties substrate.In not departing from the scope of the present invention, can adopt configuration and the shape of various coils.For example, one of the 1st coil 4A and the 2nd coil 4B or boths' coil shape can be circular, oval, polygon for example hexagon, only bight is shape, serpentine or the spirality of circle.
Claims (8)
1. a lit-par-lit structure type balanced-unbalanced transformer, comprises:
Low pass filter, is arranged between the uneven terminal of input and output unbalanced signal and the 1st balanced terminals of input and output balanced signal, and comprises the 1st coil and the 1st capacitor;
High pass filter, is arranged between the 2nd balanced terminals of described uneven terminal and input and output balanced signal, and comprises the 2nd capacitor and the 2nd coil; And
Duplexer, comprises the lip-deep a plurality of layer that is layered in substrate, and the plurality of layer comprises a plurality of conductor layers and a plurality of insulating barrier with conductive pattern, and described duplexer comprises described low pass filter and described high pass filter,
Wherein, when seeing from the stacked direction of described duplexer, described the 1st capacitor with described the 2nd capacitor arrangements in the region different with described the 2nd coil from described the 1st coil.
2. lit-par-lit structure type balanced-unbalanced transformer according to claim 1, wherein,
When seeing from described stacked direction, described the 1st capacitor and described the 2nd capacitor arrangements are between described the 1st coil and described the 2nd coil.
3. lit-par-lit structure type balanced-unbalanced transformer according to claim 2, wherein,
At least one at least one in described the 1st capacitor and described the 2nd capacitor and described the 1st coil and described the 2nd coil is configured in the same area of described duplexer on described stacked direction.
4. lit-par-lit structure type balanced-unbalanced transformer according to claim 3, wherein,
Described the 1st coil and described the 2nd coil are configured in the same area of described duplexer on described stacked direction.
5. lit-par-lit structure type balanced-unbalanced transformer according to claim 3, wherein,
Described the 1st capacitor and described the 2nd capacitor and described the 1st coil or described the 2nd coil are configured in the same area of described duplexer on described stacked direction.
6. lit-par-lit structure type balanced-unbalanced transformer according to claim 3, wherein,
Described the 1st capacitor and described the 2nd capacitor and described the 1st coil and described the 2nd coil are configured in the same area of described duplexer on described stacked direction.
7. according to the lit-par-lit structure type balanced-unbalanced transformer described in any one in claim 1～6, wherein,
When seeing from described stacked direction, at least one in described the 1st capacitor and described the 2nd capacitor is configured between described the 1st coil and described the 2nd coil.
8. according to the lit-par-lit structure type balanced-unbalanced transformer described in any one in claim 1～6, wherein,
When seeing from described stacked direction, at least one in described the 1st capacitor and described the 2nd capacitor is configured in described uneven terminal and is connected between the earth terminal on ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210275819.XA CN103579731B (en) | 2012-08-03 | 2012-08-03 | Lit-par-lit structure type balanced unbalanced transformer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210275819.XA CN103579731B (en) | 2012-08-03 | 2012-08-03 | Lit-par-lit structure type balanced unbalanced transformer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103579731A true CN103579731A (en) | 2014-02-12 |
| CN103579731B CN103579731B (en) | 2018-04-03 |
Family
ID=50051017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210275819.XA Active CN103579731B (en) | 2012-08-03 | 2012-08-03 | Lit-par-lit structure type balanced unbalanced transformer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103579731B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681908A (en) * | 2015-03-18 | 2015-06-03 | 深圳市麦捷微电子科技股份有限公司 | Ultra-miniature multilayer chip balun |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5949299A (en) * | 1997-01-07 | 1999-09-07 | Tdk Corporation | Multilayered balance-to-unbalance signal transformer |
| JP2000236227A (en) * | 1999-02-12 | 2000-08-29 | Ngk Spark Plug Co Ltd | Laminate type balun |
| CN1622452A (en) * | 2003-11-28 | 2005-06-01 | Tdk株式会社 | Balun |
| CN101199247A (en) * | 2005-06-13 | 2008-06-11 | 揖斐电株式会社 | Printed wiring board |
| KR20080100663A (en) * | 2007-05-14 | 2008-11-19 | 광운대학교 산학협력단 | Lattice type lc balun with series lc resonant circuit |
| US20100045396A1 (en) * | 2008-08-20 | 2010-02-25 | Tdk Corporation | Thin film balun |
| US20110128091A1 (en) * | 2009-11-30 | 2011-06-02 | Tdk Corporation | Coupler |
| CN102437435A (en) * | 2010-06-28 | 2012-05-02 | 株式会社村田制作所 | Module |
| CN102468814A (en) * | 2010-11-11 | 2012-05-23 | 株式会社村田制作所 | Multilayer band-pass filter |
-
2012
- 2012-08-03 CN CN201210275819.XA patent/CN103579731B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5949299A (en) * | 1997-01-07 | 1999-09-07 | Tdk Corporation | Multilayered balance-to-unbalance signal transformer |
| JP2000236227A (en) * | 1999-02-12 | 2000-08-29 | Ngk Spark Plug Co Ltd | Laminate type balun |
| CN1622452A (en) * | 2003-11-28 | 2005-06-01 | Tdk株式会社 | Balun |
| CN101199247A (en) * | 2005-06-13 | 2008-06-11 | 揖斐电株式会社 | Printed wiring board |
| KR20080100663A (en) * | 2007-05-14 | 2008-11-19 | 광운대학교 산학협력단 | Lattice type lc balun with series lc resonant circuit |
| US20100045396A1 (en) * | 2008-08-20 | 2010-02-25 | Tdk Corporation | Thin film balun |
| US20110128091A1 (en) * | 2009-11-30 | 2011-06-02 | Tdk Corporation | Coupler |
| CN102437435A (en) * | 2010-06-28 | 2012-05-02 | 株式会社村田制作所 | Module |
| CN102468814A (en) * | 2010-11-11 | 2012-05-23 | 株式会社村田制作所 | Multilayer band-pass filter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104681908A (en) * | 2015-03-18 | 2015-06-03 | 深圳市麦捷微电子科技股份有限公司 | Ultra-miniature multilayer chip balun |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103579731B (en) | 2018-04-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6138752B2 (en) | Coil component and manufacturing method thereof | |
| JP4674590B2 (en) | Balun transformer, balun transformer mounting structure, and electronic device incorporating the mounting structure | |
| US7755447B2 (en) | Multilayer balun, hybrid integrated circuit module, and multilayer substrate | |
| CN100502144C (en) | Laminated balance-unbalance transformer | |
| JP6501424B2 (en) | Noise removal filter | |
| US9300023B2 (en) | Thin film balun | |
| US7579923B2 (en) | Laminated balun transformer | |
| CN102332632B (en) | Thin film balun | |
| CN106207359B (en) | Laminated electronic component | |
| CN103579731A (en) | Cascade structure type balance-and-unbalance converter | |
| JP5326931B2 (en) | Thin film balun | |
| JP3766262B2 (en) | Balun transformer | |
| JP5754201B2 (en) | Multilayer balun | |
| US9083310B2 (en) | Laminated structural type balun | |
| JP2003283284A (en) | Flat filter | |
| EP2683081A1 (en) | Laminated lattice balun | |
| JP5045965B2 (en) | Thin film balun | |
| JP2006147615A (en) | Common mode noise filter | |
| JP2009267811A (en) | Bandpass filter and laminated bandpass filter | |
| JP5326880B2 (en) | Thin film balun | |
| JP2009055073A (en) | High-frequency circuit element | |
| JP2023147842A (en) | Laminated filter device | |
| WO2013058076A1 (en) | Signal transmission communication unit and coupler | |
| WO2013008375A1 (en) | Communication body for transmitting signals, and coupler | |
| KR20050080797A (en) | Multilayered lc filter array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |