CN103579439A - Light emitting diode die and method of manufacturing the same - Google Patents
Light emitting diode die and method of manufacturing the same Download PDFInfo
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- CN103579439A CN103579439A CN201210319962.4A CN201210319962A CN103579439A CN 103579439 A CN103579439 A CN 103579439A CN 201210319962 A CN201210319962 A CN 201210319962A CN 103579439 A CN103579439 A CN 103579439A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 128
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000000034 method Methods 0.000 claims description 23
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- 238000005520 cutting process Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
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- 150000001875 compounds Chemical class 0.000 description 3
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- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a light emitting diode core and a manufacturing method thereof. The light emitting diode die comprises a substrate, a semiconductor epitaxial stacked layer, a first electrode, a second electrode and a branch electrode group. The semiconductor epitaxial stack layer is formed on the substrate. The first electrode and the second electrode are formed on the semiconductor epitaxial stacking layer in an extending mode along the first direction. The branch electrode group comprises a first branch electrode and a second branch electrode, wherein the first branch electrode extends from the first electrode to the second electrode along a second direction perpendicular to the first direction, and the second branch electrode extends from the second electrode to the first electrode along a third direction perpendicular to the first direction.
Description
Technical field
The present invention relates to a kind of LED core and manufacture method thereof, and particularly relate to a kind of the have flexible LED core of size design and manufacture method thereof.
Background technology
In tradition LED core formation method, semiconductor epitaxial stack layer is formed at after substrate, carries out a cutting manufacture craft, to obtain several LED core.
Yet existing industry is single size planning for the dimension layout of LED core, the size that causes cutting several LED core that obtain after manufacture craft is all identical, quite there is no design flexibility.
Summary of the invention
The object of the present invention is to provide a kind of LED core and manufacture method thereof, in cutting manufacture craft, can obtain the LED core of different size.
For reaching above-mentioned purpose, according to one embodiment of the invention, a kind of LED core is proposed.LED core comprises a substrate, one first type semiconductor epitaxial layers, a luminescent layer, a Second-Type semiconductor epitaxial layers, one first electrode, one second electrode and a branch electrodes group.The first type semiconductor epitaxial layers, luminescent layer and Second-Type semiconductor epitaxial layers are sequentially stacked on substrate, and form semiconductor epitaxial layer stack and exposed part the first type semiconductor epitaxial layers.The first electrode extends to form on the first exposed type semiconductor epitaxial layers along a first direction.The second electrode extends to form on Second-Type semiconductor epitaxial layers along first direction.Branch electrodes group comprises one first branch electrodes and one second branch electrodes.The first branch electrodes, along the second direction perpendicular to first direction, is extended towards the second electrode from the first electrode.The second branch electrodes, along the third direction perpendicular to first direction, is extended towards the first electrode from the second electrode.
A kind of manufacture method of LED core is proposed according to another embodiment of the present invention.Manufacture method comprises the following steps.One substrate is provided, sequentially form one first type semiconductor epitaxial layers, a luminescent layer and a Second-Type semiconductor epitaxial layers on substrate, form semiconductor epitaxial layer stack, and have part the first type semiconductor epitaxial layers exposed, along a fourth direction, form several sliver slit on semiconductor epitaxial stack layer, form an insulating barrier in this sliver slit, form one first electrode, one second electrode and several branch electrodes group are on semiconductor epitaxial stack layer, wherein the first electrode extends to form on the first exposed type semiconductor epitaxial layers along a first direction, the second electrode extends to form on Second-Type semiconductor epitaxial layers along a first direction, and each branch electrodes group includes one first branch electrodes and one second branch electrodes, and the first branch electrodes is along the second direction perpendicular to first direction, from the first electrode, towards the second electrode, extend, and be formed on the first exposed type semiconductor epitaxial layers, the second branch electrodes is along the third direction perpendicular to this first direction, from this second electrode, towards the first electrode, extend, and be formed on Second-Type semiconductor epitaxial layers, wherein each branch electrodes group difference position is in two sides of sliver slit, and fourth direction is parallel to second and third direction, wherein the first electrode and the second electrode are through insulating barrier, and, according to the size of needed LED core, along those sliver slits of part, impose a sliver manufacture craft, to obtain other LED core.
A kind of manufacture method of LED core is proposed according to another embodiment of the present invention.Manufacture method comprises the following steps.One substrate is provided, sequentially form one first type semiconductor epitaxial layers, a luminescent layer and a Second-Type semiconductor epitaxial layers on substrate, form semiconductor epitaxial layer stack, and have part the first type semiconductor epitaxial layers exposed, along a fourth direction, form several sliver interface inner in semiconductor epitaxial stack layer, form one first electrode, one second electrode and several branch electrodes group are on this semiconductor epitaxial stack layer, wherein the first electrode extends to form on the first exposed type semiconductor epitaxial layers along a first direction, the second electrode extends to form on Second-Type semiconductor epitaxial layers along a first direction, and each branch electrodes group includes one first branch electrodes and one second branch electrodes, and the first branch electrodes is along the second direction perpendicular to first direction, from the first electrode, towards the second electrode, extend, and be formed on the first exposed type semiconductor epitaxial layers, the second branch electrodes is along the third direction perpendicular to first direction, from the second electrode, towards the first electrode, extend, and be formed on Second-Type semiconductor epitaxial layers, wherein adjacent two branch electrodes groups difference positions are in two sides at sliver interface, and fourth direction is parallel to second, third direction, and, according to the size of needed LED core, along those sliver interfaces of part, impose a sliver manufacture craft, to obtain other LED core.
For there is to better understanding above-mentioned and other aspect of the present invention, special embodiment below, and coordinate appended accompanying drawing, be described in detail below:
Accompanying drawing explanation
Figure 1A is the cutaway view of the LED core of one embodiment of the invention;
Figure 1B is the vertical view of Figure 1A;
Fig. 2 A is the vertical view of the LED core of another embodiment of the present invention;
Fig. 2 B is along the cutaway view of direction 2B-2B ' in Fig. 2 A;
Fig. 3 A is the vertical view of the LED core of another embodiment of the present invention;
Fig. 3 B is along the cutaway view of direction 3B-3B ' in Fig. 3 A;
Fig. 4 is the vertical view of the LED core of another embodiment of the present invention;
Fig. 5 is the vertical view of the LED core of another embodiment of the present invention;
The process drawing of the LED core that Fig. 6 A to Fig. 6 D is one embodiment of the invention;
Fig. 7 is the process drawing of the LED core of another embodiment of the present invention;
The process drawing of the LED core that Fig. 8 A to Fig. 8 D is another embodiment of the present invention.
Main element symbol description
100,200,300,400,500: LED core
110: substrate
110s1: the first side, border
110s2: the second boundary side
110s3: the 3rd side, border
110s4: the 4th side, border
120: semiconductor epitaxial stack layer
121: the first type semiconductor epitaxial layers
122: luminescent layer
123: Second-Type semiconductor epitaxial layers
130: the first electrodes
140: the second electrodes
150,450,550: branch electrodes group
151: the first branch electrodes
152: the second branch electrodes
260: sliver reference signs
270: sliver interface
380: sliver slit
390: insulating barrier
D1: first direction
D2: second direction
D3: third direction
D4: fourth direction
Embodiment
Please refer to Figure 1A, it illustrates the cutaway view according to the LED core of one embodiment of the invention.
Semiconductor epitaxial stack layer 120 comprises the first type semiconductor epitaxial layers 121, luminescent layer 122 and Second-Type semiconductor epitaxial layers 123, and it is sequentially stacked on substrate 110 and exposed part the first type semiconductor epitaxial layers 121.
The first type semiconductor epitaxial layers 121 for P type Second-Type semiconductor epitaxial layers 123 be N-type, or the first type semiconductor epitaxial layers 121 for N-type Second-Type semiconductor epitaxial layers 123 be P type.P type semiconductor layer is such as the nitride-base semiconductor layer that is the elements such as magnesium-doped (Mg), boron (B), indium (In), gallium (Ga) or aluminium (Al), and n type semiconductor layer is such as the nitride-base semiconductor layer that is the elements such as doped silicon (Si), phosphorus (P), antimony (Ti), arsenic (As).Luminescent layer 122 can be San Wu family Was Used compound semiconductor (being for example GaAs (GaAs), indium phosphide (InP), gallium phosphide (GaP), gallium nitride (GaN)), San Wu family multielement compound semiconductor (being for example aluminum gallium arsenide (AlGaAs), gallium arsenide phosphide (GaAsP), AlGaInP (AlGaInP), aluminium arsenide indium gallium (AlInGaAs)) or Er Liu family Was Used compound semiconductor (being for example cadmium selenide (CdSe), cadmium sulfide (CdS), zinc selenide (ZnSe)).
Please refer to Figure 1B, it illustrates the vertical view of Figure 1A, and wherein Figure 1A is along the cutaway view of direction 1A-1A ' in Figure 1B.
The first electrode 130 extends to form on the first exposed type semiconductor epitaxial layers 121 along first direction D1.In this example, the first electrode 130 extends to the second boundary side 110s2 from the first side, border 110s1 of LED core 100, and wherein the first side, border 110s1 is with respect to the second boundary side 110s2.
The second electrode 140 extends to form Figure 1A in Second-Type semiconductor epitaxial layers 123(along first direction D1) on.In this example, the second electrode 140 extends to the second boundary side 110s2 from the first side, border 110s1 of LED core 100.
Please refer to Fig. 2 A, it illustrates the vertical view according to the LED core of another embodiment of the present invention.LED core 200 comprises substrate 110, semiconductor epitaxial stack layer 120, the first electrode 130, the second electrode 140, two branch electrodes groups 150, at least one sliver reference signs 260 and at least one sliver interface 270.In this example, two branch electrodes groups 150 are symmetrical, so also can be asymmetric.
Please refer to Fig. 2 B, it illustrates in Fig. 2 A the cutaway view along direction 2B-2B '.Sliver interface 270 is to be formed by laser manufacturing process, its semiconductor epitaxial stack layer 120 inside between two branch electrodes groups 150, for example to extend substrate 110 inside, and from the 3rd side, border 110s3 of substrate 110, extend to the 4th side, border 110s4, wherein the 3rd side, border 110s3 is with respect to the 4th side, border 110s4.
Please refer to Fig. 3 A, it illustrates the vertical view according to the LED core of another embodiment of the present invention.LED core 300 comprises substrate 110, semiconductor epitaxial stack layer 120, the first electrode 130, the second electrode 140, two branch electrodes groups 150, at least one sliver slit 380 and insulating barrier 390.In this example, two branch electrodes groups 150 are symmetrical, so also can be asymmetric.
Please refer to Fig. 3 B, it illustrates in Fig. 3 A the cutaway view along direction 3B-3B '.Sliver slit 380 is that cutter or laser cutting form, and its semiconductor epitaxial stack layer 120 surfaces between two branch electrodes groups 150, for example, be from Second-Type semiconductor epitaxial layers 123, to extend to a part for substrate 110.Insulating barrier 390 is formed in sliver slit 380, to isolate the first electrode 130, the second electrode 140 and sliver slit 380, say further, because insulating barrier 390 has been filled up sliver slit 380, make through the first electrode 130 of sliver slit 380 tops and the second electrode 140 be unlikely to drop in sliver slit 380 and break (electrically opening circuit) therefore formed continuous electrode.In addition, form the optical maser wavelength of using in sliver slit 380 and sliver interface 270 different, cause the sintering vestige degree of depth different.
Although the quantity of branch electrodes is to take two as example explanation in the branch electrodes group 150 of above-described embodiment, so this is non-in order to limit the embodiment of the present invention, is below further to illustrate.
Please refer to Fig. 4, it illustrates the vertical view according to the LED core of another embodiment of the present invention.LED core 400 comprises substrate 110, semiconductor epitaxial stack layer 120, the first electrode 130, the second electrode 140 and branch electrodes group 450.
In this example, in branch electrodes group 450, the quantity of branch electrodes is to take three as example explanation.Specifically, branch electrodes group 450 comprises 2 second branch electrodes 152 and one first branch electrodes 151, and wherein the first branch electrodes 151 extends between 2 second branch electrodes 152.In another example, although figure does not illustrate, so branch electrodes group 450 can comprise 2 first branch electrodes 151 and one second branch electrodes 152, and wherein the second branch electrodes 152 extends between 2 first branch electrodes 151.
In another embodiment, the quantity of the branch electrodes group 450 of LED core 400 is two groups and also comprises at least one sliver interface 270, and wherein sliver interface 270 is between two branch electrodes groups 450.The structural similarity at sliver interface 270, in the explanation of Fig. 2 A and Fig. 2 B, holds this and repeats no more.
In another embodiment, the quantity of the branch electrodes group 450 of LED core 400 is two groups and also comprises at least one sliver slit 380 and insulating barrier 390, and wherein sliver slit 380 is between two branch electrodes groups 450.Sliver slit 380 and insulating barrier 390 structural similarities, in the explanation of Fig. 3 A and Fig. 3 B, hold this and repeat no more.
Please refer to Fig. 5, it illustrates the vertical view according to the LED core of another embodiment of the present invention.LED core 500 comprises substrate 110, semiconductor epitaxial stack layer 120, the first electrode 130, the second electrode 140 and branch electrodes group 550.
In this example, in branch electrodes group 550, the quantity of branch electrodes is to take four as example explanation.Specifically, branch electrodes group 550 comprises 2 first branch electrodes 151 and 2 second branch electrodes 152, the one of 2 first branch electrodes 151 extends between 2 second branch electrodes 152, and the one of 2 second branch electrodes 152 extends between 2 first branch electrodes 151.
In another embodiment, the quantity of the branch electrodes group 550 of LED core 500 is two groups and also comprises at least one sliver interface 270, and wherein sliver interface 270 is between two branch electrodes groups 450.The structural similarity at sliver interface 270, in the explanation of Fig. 2 A and Fig. 2 B, holds this and repeats no more.
In another embodiment, the quantity of the branch electrodes group 550 of LED core 500 is two groups and also comprises at least one sliver slit 380 and insulating barrier 390, and wherein sliver slit 380 is between two branch electrodes groups 550.Sliver slit 380 and insulating barrier 390 structural similarities, in the explanation of Fig. 3 A and Fig. 3 B, hold this and repeat no more.
In summary, the embodiment of the present invention does not limit the quantity of branch electrodes in branch electrodes group, and it can be any amount, and the group number of branch electrodes group can surpass more than two groups.
Please refer to Fig. 6 A to Fig. 6 D, it illustrates the process drawing according to the LED core of one embodiment of the invention.
As shown in Figure 6A, provide substrate 110.
As shown in Figure 6A, sequentially form the first type semiconductor epitaxial layers 121, luminescent layer 122 and Second-Type semiconductor epitaxial layers 123 on substrate 110, and form semiconductor epitaxial stack layer 120, and the first type semiconductor epitaxial layers 121 of part is out exposed.
As shown in Figure 6B, above-mentioned Fig. 6 A is along the cutaway view of direction 6A-6A ' in Fig. 6 B.Can adopt is for example laser manufacturing process, along first direction D1 and fourth direction D4, forms several sliver interface 270 in semiconductor epitaxial stack layer 120 inside, and sliver interface 270 is to be for example formed at substrate 110 inside.Its strength decreased of formation region at sliver interface 270, can carry out follow-up sliver manufacture craft effortlessly.
As shown in Figure 6 C, form at least one the first electrode 130, at least one the second electrode 140 and several branch electrodes group 150 are on semiconductor epitaxial stack layer 120, wherein the first electrode 130 extends to form in first exposed type semiconductor epitaxial layers 121(Figure 1A along first direction D1) on, the second electrode 140 extends to form Figure 1A in Second-Type semiconductor epitaxial layers 123(along first direction D1) on, and each branch electrodes group 150 includes the first branch electrodes 151 and the second branch electrodes 152, and the first branch electrodes 151 is along the second direction D2 perpendicular to first direction D1, from the first electrode 130, towards the second electrode 140, extend, and be formed on the first exposed type semiconductor epitaxial layers 121, the second branch electrodes 152 edge perpendicular to the third direction D3 of first direction D1, from the second electrode 140, towards the first electrode 130, extend, and be formed on Second-Type semiconductor epitaxial layers 123, wherein adjacent two branch electrodes groups 150 difference positions are in two sides at sliver interface 270, and fourth direction D4 is parallel to second direction D2 and third direction D3.
In another embodiment, the step of Fig. 6 C can be commutative with the execution sequence of the step of Fig. 6 B.
The minimum unit of the zone definitions LED core of part the first electrode 130, part the second electrode 140 and single branch electrodes group 150, when follow-up sliver manufacture craft (Fig. 6 D), according to the size of needed LED core, can obtain the LED core that comprises at least one minimum unit.
In addition, when forming the first electrode 130, the second electrode 140 and branch electrodes group 150, can form in the lump sliver reference signs 260 on Second-Type semiconductor epitaxial layers 123, with as in follow-up sliver manufacture craft " whether separated " reference.Sliver reference signs 260 can be formed at the fringe region of substrate 110, or the adjacent domain at corresponding sliver interface 270 forms.Depending on the formation region of sliver reference signs 260, after follow-up sliver manufacture craft, sliver reference signs 260 can remain in each or some LED core, does not so also remain in arbitrary LED core.
As shown in Figure 6 D, according to the size of needed LED core, along those sliver interfaces 270 of part, impose sliver manufacture craft, to obtain the LED core 100 of at least one separation.In this example, only obtain LED core 100 after sliver manufacture craft, so this is non-in order to limit the embodiment of the present invention, below illustrates.
Please refer to Fig. 7, it illustrates the process drawing according to the LED core of another embodiment of the present invention.According to the size of needed LED core, some of those sliver interfaces 270 of part, edge impose sliver manufacture craft, can obtain LED core 100 and 200 simultaneously.In another embodiment, some of those sliver interfaces 270 of part, edge impose sliver manufacture craft, can only obtain LED core 200.
In addition, can be by the size of sliver reference signs 260 definition LED core.Make in sliver manufacture craft, according to sliver reference signs 260, impose sliver manufacture craft and obtain the size of required LED core.
Please refer to Fig. 8 A to Fig. 8 D, it illustrates the process drawing according to the LED core of another embodiment of the present invention.
As shown in Figure 8 A, can adopt is for example cutter cutting, along first direction D1 and fourth direction D4, form several sliver slit 380 on semiconductor epitaxial stack layer 120, for example, sliver slit 380 extends to a part (Fig. 3 B) for substrate 110 from the first type semiconductor epitaxial layers 121.
As shown in Figure 8 B, form insulating barrier 390 in sliver slit 380.
As shown in Figure 8 C, form at least one the first electrode 130, at least one the second electrode 140 and several branch electrodes group 150 are on semiconductor epitaxial stack layer 120, wherein the first electrode 130 extends to form in first exposed type semiconductor epitaxial layers 121(Fig. 3 B along first direction D1) on, the second electrode 140 extends to form on Second-Type semiconductor epitaxial layers 123 along first direction D1, and each branch electrodes group 150 includes the first branch electrodes 151 and the second branch electrodes 152, and the first branch electrodes 151 is along the second direction D2 perpendicular to first direction D1, from the first electrode 130, towards the second electrode 140, extend, and be formed on the first exposed type semiconductor epitaxial layers 121, the second branch electrodes 152 edge perpendicular to the third direction D3 of first direction D1, from the second electrode 140, towards the first electrode 130, extend, and be formed on Second-Type semiconductor epitaxial layers 123, wherein adjacent two branch electrodes groups 150 difference positions are in two sides of sliver slit 380, and fourth direction D4 is parallel to second direction D2 and third direction D3, wherein the first electrode 130 and the second electrode 140 are through insulating barrier 390.
In addition, when forming the first electrode 130, the second electrode 140 and branch electrodes group 150, can form in the lump sliver reference signs 260 on Second-Type semiconductor epitaxial layers 123, with as in follow-up sliver manufacture craft " sliver whether " reference.Sliver reference signs 260 can be formed at the fringe region of substrate 110, or the adjacent domain at corresponding sliver interface 270 forms.
As shown in Fig. 8 D, according to the size of needed LED core, along in those sliver slits 380, at least some impose sliver manufacture craft, to obtain the LED core 300 of at least one separation.
In sum, though in conjunction with above embodiment, disclosed the present invention, it is not in order to limit the present invention.Be familiar with in the technical field of the invention this operator, without departing from the spirit and scope of the present invention, can be used for a variety of modifications and variations.Therefore, protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (19)
1. a LED core, comprising:
Substrate;
The first type semiconductor epitaxial layers, luminescent layer and Second-Type semiconductor epitaxial layers, be sequentially stacked on this substrate, and form semiconductor epitaxial layer stack and this first type semiconductor epitaxial layers of exposed part;
The first electrode, extends to form on this first exposed type semiconductor epitaxial layers along a first direction;
The second electrode, extends to form in this Second-Type epitaxial semiconductor layer along this first direction; And
Branch electrodes group, comprising:
The first branch electrodes, along the second direction perpendicular to this first direction, this first electrode extends towards this second electrode certainly; And
The second branch electrodes, along the third direction perpendicular to this first direction, this second electrode extends towards this first electrode certainly.
2. LED core as claimed in claim 1, comprises two these branch electrodes groups, and these two branch electrodes groups are symmetrical.
3. LED core as claimed in claim 1, wherein this branch electrodes group comprises two these the second branch electrodes, and this first branch electrodes extends between these two second branch electrodes.
4. LED core as claimed in claim 1, wherein this branch electrodes group comprises two these the first branch electrodes and two these the second branch electrodes, the one of these two the first branch electrodes extends between these two second branch electrodes, and the one of these two the second branch electrodes extends between these two first branch electrodes.
5. LED core as claimed in claim 2, wherein this semiconductor epitaxial stack layer also comprises multiple tracks sliver slit or sliver interface.
6. LED core as claimed in claim 5, wherein this sliver slit this semiconductor epitaxial stack layer between these two branch electrodes groups is surperficial, and at this sliver slit and this first, second electrode intersection, there is insulating barrier, to isolate this first, second electrode and this sliver slit.
7. LED core as claimed in claim 6, wherein this sliver slit is that cutter cutting institute forms.
8. LED core as claimed in claim 5, wherein this sliver interface this semiconductor epitaxial stack layer between these two branch electrodes groups is inner.
9. LED core as claimed in claim 8, wherein this sliver interface is that laser manufacturing process completes.
10. LED core as claimed in any one of claims 1-9 wherein, wherein this first type semiconductor epitaxial layers is P type, and this Second-Type semiconductor epitaxial layers is N-type, or this first type semiconductor epitaxial layers is N-type and this Second-Type semiconductor epitaxial layers is P type.
11. LED core as claimed in claim 1, also comprise a sliver reference signs, are formed on this semiconductor epitaxial stack layer.
The manufacture method of 12. 1 kinds of LED core, comprising:
One substrate is provided;
Sequentially form one first type semiconductor epitaxial layers, a luminescent layer and a Second-Type semiconductor epitaxial layers on this substrate, form semiconductor epitaxial layer stack, and have this first type semiconductor epitaxial layers of part exposed;
Along a fourth direction, form multiple tracks sliver slit on this semiconductor epitaxial stack layer;
Form an insulating barrier in this sliver slit;
Form one first electrode, one second electrode and a plurality of branch electrodes group are on this semiconductor epitaxial stack layer, wherein this first electrode extends to form on this first exposed type semiconductor epitaxial layers along a first direction, this second electrode extends to form on this Second-Type semiconductor epitaxial layers along a first direction, and respectively this branch electrodes group includes one first branch electrodes and one second branch electrodes, and this first branch electrodes is along the second direction perpendicular to this first direction, from this first electrode, towards this second electrode, extend, and be formed on this first exposed type semiconductor epitaxial layers, this second branch electrodes is along the third direction perpendicular to this first direction, from this second electrode, towards this first electrode, extend, and be formed on this Second-Type semiconductor epitaxial layers, wherein respectively this branch electrodes group is distinguished position in two sides of this sliver slit, and this fourth direction is parallel to this second and third direction, wherein this first electrode and this second electrode are through this insulating barrier, and
According to the size of needed LED core, along those sliver slits of part, impose a sliver manufacture craft, to obtain other LED core.
13. manufacture methods as claimed in claim 12, wherein those sliver slits are to complete with a cutter cutting or a laser.
14. the manufacture method as described in any one in claim 12 to 13, wherein this first type semiconductor epitaxial layers is P type and this Second-Type semiconductor epitaxial layers is N-type, or this first type semiconductor epitaxial layers is N-type and this Second-Type semiconductor epitaxial layers is P type.
15. manufacture methods as claimed in claim 14, wherein also comprise a sliver reference signs on this semiconductor stack epitaxial loayer, this cutter or this laser can be cut according to this and form this sliver slit.
The manufacture method of 16. 1 kinds of LED core, comprising:
One substrate is provided;
Sequentially form one first type semiconductor epitaxial layers, a luminescent layer and a Second-Type semiconductor epitaxial layers on this substrate, form semiconductor epitaxial layer stack, and have this first type semiconductor epitaxial layers of part exposed;
Along a fourth direction, form multiple tracks sliver interface inner in this semiconductor epitaxial stack layer;
Form one first electrode, one second electrode and a plurality of branch electrodes group are on this semiconductor epitaxial stack layer, wherein this first electrode extends to form on this first exposed type semiconductor epitaxial layers along a first direction, this second electrode extends to form on this Second-Type semiconductor epitaxial layers along a first direction, and respectively this branch electrodes group includes one first branch electrodes and one second branch electrodes, and this first branch electrodes is along the second direction perpendicular to this first direction, from this first electrode, towards this second electrode, extend, and be formed on this first exposed type semiconductor epitaxial layers, this second branch electrodes is along the third direction perpendicular to this first direction, from this second electrode, towards this first electrode, extend, and be formed on this Second-Type semiconductor epitaxial layers, wherein adjacent two these branch electrodes groups difference positions are in two sides at this sliver interface, and this fourth direction be parallel to this second, third direction, and
According to the size of needed LED core, along those sliver interfaces of part, impose a sliver manufacture craft, to obtain other LED core.
17. manufacture methods as claimed in claim 16, wherein those sliver interfaces are to complete with laser manufacturing process.
18. manufacture methods as described in claim 16 or 17, wherein this first type semiconductor epitaxial layers is P type and this Second-Type semiconductor epitaxial layers is N-type, or this first type semiconductor epitaxial layers is N-type and this Second-Type semiconductor epitaxial layers is P type.
19. manufacture methods as claimed in claim 18, wherein also comprise a sliver reference signs on this semiconductor stack epitaxial loayer, make this laser manufacturing process can form according to this those sliver interfaces.
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|---|---|---|---|
| TW101128297 | 2012-08-06 | ||
| TW101128297A TW201407813A (en) | 2012-08-06 | 2012-08-06 | Light emitting diode die and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN103579439A true CN103579439A (en) | 2014-02-12 |
| CN103579439B CN103579439B (en) | 2016-06-15 |
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| CN106941107A (en) * | 2016-01-05 | 2017-07-11 | 群创光电股份有限公司 | LED core substrate and its apply display device |
| CN112951865A (en) * | 2019-12-11 | 2021-06-11 | 财团法人工业技术研究院 | Pixel structure, manufacturing method thereof and display with pixel structure |
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| US20110220931A1 (en) * | 2010-03-09 | 2011-09-15 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
| CN102376837A (en) * | 2010-08-23 | 2012-03-14 | 亚世达科技股份有限公司 | Light emitting diode |
| WO2012067311A1 (en) * | 2010-11-18 | 2012-05-24 | Seoul Opto Device Co., Ltd. | Light emitting diode chip having electrode pad |
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| US20110220931A1 (en) * | 2010-03-09 | 2011-09-15 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same |
| CN102376837A (en) * | 2010-08-23 | 2012-03-14 | 亚世达科技股份有限公司 | Light emitting diode |
| WO2012067311A1 (en) * | 2010-11-18 | 2012-05-24 | Seoul Opto Device Co., Ltd. | Light emitting diode chip having electrode pad |
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| CN106941107A (en) * | 2016-01-05 | 2017-07-11 | 群创光电股份有限公司 | LED core substrate and its apply display device |
| CN106941107B (en) * | 2016-01-05 | 2019-09-27 | 群创光电股份有限公司 | LED core substrate and its apply display device |
| CN112951865A (en) * | 2019-12-11 | 2021-06-11 | 财团法人工业技术研究院 | Pixel structure, manufacturing method thereof and display with pixel structure |
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| Publication number | Publication date |
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| CN103579439B (en) | 2016-06-15 |
| TW201407813A (en) | 2014-02-16 |
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