KR20090028235A - Gan-based light emitting diode and method for fabricating the same - Google Patents

Abstract

An GaN-based semiconductor light-emitting device and a method of manufacture thereof are provided to form a plurality of scattering inducting grooves formed in the lower part of the GaN-based semiconductor layer and to effectively diffuse the light of the light-emitting layer. The GaN-based semiconductor light-emitting device comprises the GaN-based semiconductor layer(110) of the multi layer. The scattering inducing unit is formed in the bottom of the GaN-based semiconductor layer. The scattering inducing unit diffuses the light generated from the GaN-based semiconductor layer. The scattering inducing unit comprises a plurality of scattering inducing grooves formed on the lower surface of the GaN-based semiconductor layer. A plurality of scattering inducing grooves(122) is separated in the constant interval.

Description

Nitride-based light emitting device and its manufacturing method {GaN-based Light Emitting Diode and method for fabricating the same}

The present invention relates to a nitride-based light emitting device and a method of manufacturing the same, and more particularly, to minimize the structural defects of the nitride-based light emitting device when separating the substrate and the nitride-based light emitting device and to maximize the light extraction efficiency (light extraction efficiency) It relates to a nitride-based light emitting device that can be made and a method of manufacturing the same.

Light Emitting Diodes (hereinafter referred to as LEDs) are semiconductor devices that convert current into light.In 1962, red LEDs using GaAsP compound semiconductors were commercialized. It is used as a display light source of electronic devices including.

Recently, a light emitting device using a nitride compound semiconductor has attracted attention. One reason for this is that semiconductor layers emitting green, blue and white light can be produced by combining GaN with elements such as In and Al. Such nitride-based light emitting devices are widely used in various fields such as flat panel market values, traffic lights, indoor lighting, high resolution output systems, and optical communications.

On the other hand, nitride-based light emitting device is usually completed through the following manufacturing process. That is, a nitride-based light emitting device is formed by applying a series of processes such as growth of an nitride layer and electrode formation on a sapphire (Al ₂ O ₃ ) substrate, and then the nitride is separated by separating the sapphire substrate. Complete the light emitting device.

In the manufacture of such conventional nitride-based light emitting devices, the sapphire substrate is chemically and thermally stable, has a high melting point to enable a high temperature manufacturing process and has a high dielectric constant, but as the thermal conductivity is deteriorated, As a result, it is difficult to fabricate a high luminance nitride-based light emitting device.

In addition, the separation process of the sapphire substrate and the nitride-based light emitting device is essential in manufacturing a conventional nitride-based light emitting device. In order to stably secure the characteristics of the nitride-based light emitting device, the nitride is separated when the sapphire substrate and the nitride-based light emitting device are separated. Crack generation of the light emitting device should be minimized.

As a method of separating the sapphire substrate and the nitride-based light emitting device, the prior art proposes a so-called LLO (Laser Lift Off) method for irradiating and separating a laser at the interface between the sapphire substrate and the nitride-based light emitting device epi layer. have. Methods of fabricating GaN semiconductor structures using laser-assisted epitaxial lift off, US 6,562,648, and the method for separation and transfer of semiconductor thin films onto dissimilar substrate materials, US 6,071,795 for the LLO method. (Separation of thin films from transparent substrates by selective optical processing) and the like. However, the LLO method has a problem in that the thin film of the nitride-based light emitting device is deteriorated due to the high heat of the laser, or a crack is generated in the epi layer due to the difference in the coefficient of thermal expansion.

On the other hand, in order to overcome the low thermal conductivity characteristics of sapphire, research is being conducted to apply SiC substrates and Si substrates instead of sapphire substrates. In this case, the price is inexpensive and there is an advantage of having excellent thermal conductivity. However, as the thickness of the epi layer becomes thicker, there is a disadvantage that the crack problem due to the difference in thermal expansion coefficient is intensified.

The present invention has been made to solve the above problems, a nitride that can minimize the structural defects of the nitride-based light emitting device when the substrate and the nitride-based light emitting device is separated and can maximize the light extraction efficiency (light extraction efficiency) It is an object of the present invention to provide a light emitting device and a method of manufacturing the same.

The nitride-based light emitting device according to the present invention for achieving the above object comprises a nitride-based semiconductor layer consisting of a plurality of layers, the light generated from the nitride-based semiconductor layer at the bottom of the nitride-based semiconductor layer A scattering induction part is provided to serve to scatter, and the scattering induction part is configured to include a plurality of scattering induction grooves formed at a predetermined interval on the lower surface of the nitride based semiconductor layer.

The height and width of the scattering guide groove, the spacing between the scattering guide grooves respectively correspond to the wavelength of light generated from the nitride-based semiconductor layer, the height and width of the scattering guide groove, between the scattering guide grooves The intervals are respectively 0.1 to 5 mu m.

In addition, the nitride semiconductor layer has a structure in which a buffer layer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are sequentially stacked.

The transparent electrode and the p-electrode are further provided on the entire surface of the nitride based semiconductor layer, and the n-electrode is further provided on the entire surface of the lower surface of the nitride based semiconductor layer including the scattering guide groove. Or a reflector and a p-electrode are further provided on the entire surface of the nitride based semiconductor layer, and an n-electrode is further provided on the surface of the nitride based semiconductor layer exposed by removing a portion of the nitride based semiconductor layer. A portion from which a portion of the region is removed is a portion including the p-type cladding layer and the light emitting layer, and the nitride-based semiconductor layer having the surface exposed is an n-type cladding layer.

Method of manufacturing a nitride-based light emitting device according to the present invention comprises the steps of (a) forming a plurality of scattering induction pattern spaced at a predetermined interval on the substrate, and comprises a plurality of layers on the front surface of the substrate including the scattering induction pattern (B) growing a nitride based semiconductor layer, and mounting a separation auxiliary plate on an upper surface of the nitride based semiconductor layer and a lower surface of the substrate, and removing the scattering induction pattern. (D) forming a scattering guide groove in the semiconductor layer and separating the substrate and the nitride based semiconductor layer by applying mechanical stress to the separation auxiliary plate.

The forming of the plurality of scattering induction patterns spaced apart at regular intervals on the substrate may include stacking the scattering induction film on the substrate and patterning the scattering induction film at regular intervals to form a plurality of scattering induction patterns. It consists of a process of forming. In addition, the substrate may be formed of any one of GaN, InGaN, AlGaN, and AlInGaN on any one of a silicon (Si) substrate, a GaAs substrate, an MgO substrate, a sapphire (Al ₂ O ₃ ) substrate, or a SiC substrate. It is a laminated template substrate.

The scattering induction film is made of a dielectric or a metal, and the height and width of the scattering induction pattern and the spacing between the scattering induction patterns are smaller than the wavelength of light generated from the nitride based semiconductor layer, respectively. Here, the height and width of the scattering induction pattern, the spacing between the scattering induction pattern is preferably 0.1 to 5㎛ each.

Growing a nitride-based semiconductor layer consisting of a plurality of layers on the front surface of the substrate including the scattering induction pattern, buffer layer, n-type contact layer, n-type cladding layer on the front surface of the substrate including the scattering induction pattern The light emitting layer, the p-type cladding layer and the p-type contact layer are sequentially formed.

After the step (e) of separating the substrate and the nitride semiconductor layer, a transparent electrode and a p-electrode are formed on the entire surface of the nitride semiconductor layer, and the lower surface of the nitride semiconductor layer including the scattering guide groove is formed. Forming an n-electrode on the front surface.

In addition, after the step (e) of separating the substrate from the nitride semiconductor layer, a reflector and a p-electrode are formed on the entire surface of the nitride based semiconductor layer, and a part of the nitride based semiconductor layer is removed and removed. And forming an n-electrode on the exposed surface of the nitride-based semiconductor layer, wherein the portion of the region removed is a portion including the p-type cladding layer and the light emitting layer, and the surface is exposed. The nitride based semiconductor layer may be an n-type cladding layer.

Here, when the p-electrode is formed on the upper surface of the nitride based semiconductor layer prior to the adhesion of the separation auxiliary plate, only the transparent electrode and the n-electrode formation process are performed. In addition, a reflective electrode may be formed instead of the transparent electrode, and the formation of the p-electrode and the n-electrode does not proceed in time series.

In addition, the method of manufacturing a nitride-based light emitting device according to the present invention comprises the steps of (a) forming a plurality of scattering induction pattern spaced at a predetermined interval on the substrate, a plurality of layers on the front surface of the substrate including the scattering induction pattern (B) growing a nitride-based semiconductor layer comprising: forming a scattering guide groove in the nitride-based semiconductor layer by removing the scattering induction pattern; and transparent on the entire surface of the nitride-based semiconductor layer And forming an electrode and a p-electrode, and forming an n-electrode on the entire surface of the lower surface of the substrate.

According to another object, a method of manufacturing a nitride-based light emitting device according to the present invention includes the steps of (a) forming a plurality of scattering induction patterns spaced at a predetermined interval on the substrate, and on the front surface of the substrate including the scattering induction pattern (B) growing a nitride-based semiconductor layer composed of a plurality of layers, forming a scattering guide groove in the nitride-based semiconductor layer by removing the scattering induction pattern, and the nitride-based semiconductor layer. (D) forming a reflector and a p-electrode on the front surface, removing a portion of the nitride-based semiconductor layer, and forming an n-electrode on the surface of the removed nitride-based semiconductor layer; In the step (d), a portion of the region removed is a portion including the p-type cladding layer and a light emitting layer, and the nitride-based semiconductor layer exposed to the surface is an n-type cladding. It is characterized in that the layer.

The nitride-based light emitting device and the method of manufacturing the same according to the present invention have the following effects.

As a plurality of scattering guide grooves are provided in the lower portion of the nitride based semiconductor layer, light generated from the light emitting layer can be effectively scattered, thereby improving light extraction efficiency.

In addition, by forming a scattering induction pattern on the substrate and removing the scattering induction pattern when the nitride-based semiconductor layer is separated, the substrate and the nitride-based semiconductor layer can be easily removed. It is possible to minimize the occurrence.

Hereinafter, a nitride based light emitting device and a method of manufacturing the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. 1 is a cross-sectional view of a nitride-based light emitting device according to a first embodiment of the present invention, Figure 2 is a cross-sectional view of a nitride-based light emitting device according to a second embodiment of the present invention. 1 illustrates a vertical nitride light emitting device, and FIG. 2 illustrates a flip chip nitride light emitting device.

First, as shown in FIGS. 1 and 2, the vertical nitride light emitting device and the flip chip nitride light emitting device have a nitride semiconductor layer 110 composed of a plurality of layers in common, and the nitride semiconductor The bottom of the layer 110 has a scattering inducer 120. Here, the scattering induction means scattering the light generated from the light emitting layer which is one of the plurality of layers constituting the nitride-based semiconductor layer 110, the nitride-based semiconductor layer 110 to induce the scattering of the light The lower end of) has a scattering guide portion 120 of the shape in which the scattering guide groove 122 is dug at a predetermined interval.

In order to efficiently induce light scattering, the spacing between the scattering guide grooves 122 and the depth and width of the scattering guide groove 122 are preferably designed to correspond to the wavelength of light generated from the light emitting layer. Even when designed to be smaller or larger than the wavelength of light, the scattering characteristics are improved by reflection. Reflecting this, the spacing between the scattering guide grooves 122 and the depth and width of the scattering guide groove 122 are preferably designed to each 0.1 to 5㎛.

Meanwhile, as described above, the nitride based semiconductor layer 110 includes a plurality of layers, and basically includes an n-type cladding layer 111, a light emitting layer 112, and a p-type cladding layer 113 sequentially stacked. Although not shown in the drawings, an n-type contact layer and a buffer layer may be further provided below the n-type cladding layer 111, and a p-type contact layer may be further provided on the p-type cladding layer 113. The buffer layer, the n-type contact layer, the n-type cladding layer 111, the light emitting layer 112, the p-type cladding layer 113, and the p-type contact layer are all In _x (Al _y Ga _1-y ) N (0≤x It is composed of a material included in the general formula of ≤ 1, 0 <y <1, the conductive type in the case of the n-type contact layer, n-type cladding layer 111, p-type cladding layer 113, p-type contact layer In order to have, impurities such as Si and Mg are added. For example, Si is added as an impurity to the n-type contact layer and the n-type cladding layer 111, and Mg is added to the p-type cladding layer 113 and the p-type contact layer.

The vertical nitride based light emitting device and the flip chip nitride based light emitting device according to an exemplary embodiment of the present invention have the same structure as described above, that is, the nitride based semiconductor layer 110 including a plurality of layers, and the nitride based semiconductor layer. Under the structure having the scattering induction part 120 at the bottom of 110 has the following difference.

As shown in FIG. 1, the vertical nitride light emitting device according to the exemplary embodiment of the present invention includes a transparent electrode 103 and a p-electrode 102 on the entire surface of the nitride based semiconductor layer 110. The transparent electrode 103 and the p-electrode 102 are electrically connected to each other. In addition, an n-electrode 101 is provided on the entire surface of the lower surface of the nitride based semiconductor layer 110, that is, on the entire surface of the lower surface of the nitride based semiconductor layer 110 including the scattering guide groove 122. . Here, a reflective electrode may be provided instead of the transparent electrode.

On the other hand, the flip chip nitride light emitting device according to an embodiment of the present invention has a reflective layer 203 on the entire surface of the nitride based semiconductor layer 110, as shown in Figure 2, the nitride based semiconductor layer ( The p-electrode 202 is provided on one side of the 110. In addition, an n-electrode 201 is provided on the surface of the nitride based semiconductor layer 110 in which a portion of the nitride based semiconductor layer 110 is removed. In this case, the portion where the partial region is removed is precisely referred to a portion including the p-type cladding layer 113 and the light emitting layer 112 among the plurality of layers constituting the nitride based semiconductor layer 110, and the surface is exposed. The nitride semiconductor layer 110 to be formed is an n-type cladding layer 111.

Looking at the manufacturing method of the nitride-based light emitting device according to an embodiment of the present invention having the above structure as follows. 3A to 3G are cross-sectional views illustrating a method of manufacturing a nitride-based light emitting device according to an embodiment of the present invention.

First, a substrate is prepared as shown in FIG. 3A. The substrate 301 serves to provide a growth space for the nitride based semiconductor layer 110, and may include any one of a silicon (Si) substrate, a GaAs substrate, an MgO substrate, and a sapphire (Al ₂ O ₃ ) substrate. A template substrate on which any one of GaN, InGaN, AlGaN, and AlInGaN is stacked may be used.

Subsequently, a scattering induction film 121 is laminated on the substrate 301. The scattering induction film 121 is preferably made of a material having a high etching selectivity compared to the nitride-based semiconductor layer 110 is laminated through a subsequent process, for example, a dielectric such as silicon oxide, silicon nitride, or It may be composed of a metal.

In this state, as shown in FIG. 3B, the scattering induction film 121 is selectively patterned using a photolithography process and an etching process to form a plurality of scattering induction patterns 121a. In this case, the height and width of the scattering induction pattern 121a and the spacing between the scattering induction patterns 121a are light generated from the light emitting layer 112 of the nitride based semiconductor layer 110 which is stacked through a subsequent process. It is preferable to correspond to the wavelength of. In general, as the wavelength of the light emitted from the light emitting layer 112 is 0.3 to 0.5 µm, the height and width of the scattering induction pattern 121a and the spacing between the scattering induction patterns 121a are 0.1 to 5 µm, respectively. Is preferably.

Next, as illustrated in FIG. 3C, the nitride based semiconductor layer 110 is epitaxially grown on the entire surface of the substrate 301 including the plurality of scattering induction patterns 121a. The nitride based semiconductor layer 110 may be divided into a plurality of layers, and the plurality of layers may include a buffer layer, an n-type contact layer, an n-type cladding layer 111, an emission layer 112, and a p-type cladding layer 113. and p-type contact layers are sequentially stacked. Here, the buffer layer, the n-type contact layer and the p-type contact layer are not shown. In addition, each layer constituting the nitride-based semiconductor layer 110 is grown by a method such as metal organic chemical vapor deposition (MOCVD) or a molecular beam epitaxy (MBE). At this time, according to the growth thickness of the buffer layer, n-type contact layer, n-type cladding layer 111, the top surface of the scattering induction pattern 121a of the buffer layer, n-type contact layer, n-type cladding layer 111 Touch any one.

In the state where the nitride based semiconductor layer 110 is formed, the separation auxiliary plate 302 is adhered to each of the upper surface of the nitride based semiconductor layer 110 and the lower surface of the substrate 301. The adhesion at this time uses an adhesive (not shown) such as glue and epoxy.

Meanwhile, before adhering the separation auxiliary plate 302 to the upper surface of the nitride based semiconductor layer 110 and the lower surface of the substrate 301, the p-electrode is previously formed on the upper surface of the nitride based semiconductor layer 110. Can be formed. The p-electrode at this time corresponds to the p-electrode of the vertical nitride light emitting device or the flip chip nitride light emitting device. As described above, when the p-electrode is formed before the substrate 301 and the nitride based semiconductor layer 110 are separated (see FIG. 1F described later), the substrate 301 and the nitride based semiconductor layer 110 are separated by a subsequent process. Thereafter, only the n-electrode formation process may be performed.

In the state in which the separation auxiliary plate 302 is bonded, the scattering induction pattern 121a is removed through wet etching as shown in FIG. 3E. As a result, the bonding force between the nitride based semiconductor layer 110 and the substrate 301 is reduced, and the portion of the substrate 301 and the nitride based semiconductor layer 110 are illustrated in FIG. 3F using the separation auxiliary plate 302. As shown in the drawing, it can be easily separated mechanically. For reference, a portion from which the scattering induction pattern 121a is removed will be referred to as a scattering induction groove 122.

In such a state, if the separation auxiliary plate 302 is removed and a subsequent process corresponding to the vertical nitride light emitting device or the flip chip nitride light emitting device is applied, the method of manufacturing the nitride light emitting device according to the embodiment of the present invention. Is complete.

In order to manufacture the vertical nitride light emitting device, the substrate 301 and the nitride semiconductor layer 110 are separated through the process of FIG. 3F and the separation auxiliary plate 302 is removed. As described above, the transparent electrode, the p-electrode and the n-electrode are formed. At this time, as described above, when the p-electrode is formed on the upper surface of the nitride based semiconductor layer 110 prior to the adhesion of the separation auxiliary plate 302, only the transparent electrode and the n-electrode formation process are performed. Specifically, the transparent electrode 103 and the p-electrode 102 are formed on the upper surface of the nitride based semiconductor layer 110, and the lower surface of the nitride based semiconductor layer 110 including the scattering guide groove 122 is formed. The n-electrode 101 is formed on the front surface to complete the vertical nitride light emitting device. In this case, a reflective electrode may be formed instead of the transparent electrode. In addition, the formation of the p-electrode 102 and the n-electrode 101 does not proceed in time series. That is, either the p-electrode 102 or the n-electrode 101 may be formed first.

Meanwhile, in order to manufacture a flip chip type nitride light emitting device, the substrate 301 and the nitride semiconductor layer 110 are separated through the process of FIG. 3F and the separation auxiliary plate 302 is removed. As shown in the drawing, a process of forming the reflective layer, the p-electrode, and the n-electrode is performed. At this time, when the p-electrode is formed on the upper surface of the nitride based semiconductor layer 110 before the separation auxiliary plate 302 is attached, only the reflective layer and the n-electrode formation process are performed. Specifically, the reflective layer 203 and the p-electrode 202 are formed on the upper surface of the nitride based semiconductor layer 110, and a portion of the nitride based semiconductor layer 110 is removed to expose the nitride based The n-electrode 201 is formed on the surface of the semiconductor layer 110. In this case, the portion where the partial region is removed is precisely referred to a portion including the p-type cladding layer 113 and the light emitting layer 112 among the plurality of layers constituting the nitride based semiconductor layer 110, and the surface is exposed. The nitride semiconductor layer 110 to be formed is an n-type cladding layer 111. In addition, as in the method of manufacturing the vertical nitride-based light emitting device, the formation of the p-electrode 202 and the n-electrode 201 does not proceed in time series, and the p-electrode 202 and the n-electrode Any of 201 may be formed first.

The method for manufacturing the vertical type and flip chip type nitride light emitting devices according to the exemplary embodiment of the present invention has been described above with reference to FIGS. 3A to 3G, and the vertical type and flip chip type nitride light emitting devices shown in FIGS. 3A to 3G. The device manufacturing method relates to separating the substrate 301 from the nitride semiconductor layer 110 and manufacturing a nitride light emitting device using the separated nitride semiconductor layer 110.

According to another embodiment of the present invention, the vertical type and flip chip type nitride light emitting devices may be manufactured in a state where the substrate 301 and the nitride semiconductor layer 110 are not separated. That is, in the state in which the scattering induction pattern 121a is removed by the step of FIG. 3E, applying a process for manufacturing a vertical type or flip chip type nitride light emitting device without separating the substrate 301 and the nitride based semiconductor layer may be performed. It features.

Hereinafter, a method of manufacturing a nitride based light emitting device according to another embodiment of the present invention will be described in detail. For reference, in the method of manufacturing the nitride based light emitting device according to another embodiment of the present invention, the processes of FIGS. 3A to 3C are the same in the method of manufacturing the nitride based light emitting device according to the embodiment of the present invention. That is, in the state in which the nitride based semiconductor layer 110 is formed on the entire surface of the substrate 301 by the step of FIG. 3C, a method of manufacturing a nitride based light emitting device according to another embodiment of the present invention is performed. 4A to 4E are cross-sectional views illustrating a method of manufacturing a nitride based light emitting device according to another exemplary embodiment of the present invention, and the processes illustrated in FIGS. 4A to 4C are the same as those of FIGS. 3A to 3C, respectively. Detailed description thereof will be omitted.

In the state where the nitride based semiconductor layer 110 is formed on the entire surface of the substrate 301 by the step of FIG. 4C (FIG. 4C), as shown in FIG. 4D, the scattering induction pattern 121a is removed through wet etching. . Here, as described above, the portion from which the scattering induction pattern 121a is removed is called a scattering induction groove 122.

In this state, a subsequent process for manufacturing a vertical nitride light emitting device or a flip chip nitride light emitting device is applied.

First, referring to a case of manufacturing a vertical nitride light emitting device, as shown in FIG. 4E (a), the transparent electrode 103 and the p-electrode 102 are formed on the upper surface of the nitride based semiconductor layer 110. The n-electrode 101 is formed on the bottom surface of the substrate 301 to complete the vertical nitride light emitting device.

Next, a case of fabricating a flip chip nitride light emitting device will be described. As shown in FIG. 4E (b), the reflective layer 203 and the p-electrode 202 are formed on the upper surface of the nitride based semiconductor layer 110. And remove a portion of the nitride based semiconductor layer 110 and form an n-electrode 201 on the exposed surface of the nitride based semiconductor layer 110. In this case, the portion where the partial region is removed is precisely referred to a portion including the p-type cladding layer 113 and the light emitting layer 112 among the plurality of layers constituting the nitride based semiconductor layer 110, and the surface is exposed. The nitride semiconductor layer 110 to be formed is an n-type cladding layer 111.

1 is a cross-sectional view of a nitride based light emitting device according to a first embodiment of the present invention.

2 is a cross-sectional view of a nitride-based light emitting device according to a second embodiment of the present invention.

3A to 3G are cross-sectional views illustrating a method of manufacturing a nitride-based light emitting device according to an embodiment of the present invention.

4A to 4E are cross-sectional views illustrating a method of manufacturing a nitride-based light emitting device according to another embodiment of the present invention.

Description of the main parts of the drawing

110 nitride layer semiconductor layer 111 n-type cladding layer

112: light emitting layer 113: p-type cladding layer

120: scattering induction part 121: scattering induction film

121a: scattering induction pattern 122: scattering induction groove

Claims (28)

It comprises a nitride-based semiconductor layer composed of a plurality of layers, A scattering induction part is provided at a lower end of the nitride based semiconductor layer to scatter light generated from the nitride based semiconductor layer. The scattering induction part is a nitride-based light emitting device, characterized in that it comprises a plurality of scattering induction grooves formed spaced apart at regular intervals on the lower surface of the nitride-based semiconductor layer. The nitride-based light emitting device of claim 1, wherein the height and width of the scattering guide grooves and the spacing between the scattering guide grooves correspond to wavelengths of light generated from the nitride based semiconductor layer, respectively. The nitride-based light emitting device according to claim 1, wherein the height and width of the scattering guide grooves and the spacing between the scattering guide grooves are 0.1 to 5 탆, respectively. The nitride-based light emitting device of claim 1, wherein the nitride semiconductor layer has a structure in which a buffer layer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are sequentially stacked. device. The semiconductor device of claim 1, further comprising a transparent electrode, a reflective electrode, and a p-electrode on the entire surface of the nitride based semiconductor layer, and n on the entire surface of the lower surface of the nitride based semiconductor layer including the scattering guide groove. A nitride-based light emitting device characterized in that the electrode is further provided. The nitride-based semiconductor layer of claim 4, further comprising a reflector and a p-electrode on the entire surface of the nitride-based semiconductor layer, wherein a portion of the nitride-based semiconductor layer is removed to expose the n-electrode on the exposed surface of the nitride-based semiconductor layer. More equipped, The portion from which the partial region is removed is a portion including the p-type cladding layer and the light emitting layer, and the nitride-based semiconductor layer exposed to the surface is an n-type cladding layer. (A) forming a plurality of scattering induction patterns spaced apart at regular intervals on the substrate; (B) growing a nitride based semiconductor layer including a plurality of layers on the entire surface of the substrate including the scattering induction pattern; (C) mounting a separation auxiliary plate on an upper surface of the nitride based semiconductor layer and a lower surface of the substrate; Removing the scattering induction pattern to form scattering guide grooves in the nitride based semiconductor layer; And And (e) separating the substrate and the nitride semiconductor layer by applying a mechanical stress to the separation auxiliary plate. The method of claim 7, wherein the forming of the plurality of scattering induction patterns spaced apart from each other on the substrate comprises: Stacking a scattering induction film on the substrate; And forming a plurality of scattering induction patterns by patterning the scattering induction film at predetermined intervals. The method of claim 7, wherein the substrate comprises at least one of a silicon (Si) substrate, a GaAs substrate, an MgO substrate, a sapphire (Al ₂ O ₃ ) substrate, a SiC substrate, or any one of these substrates. A method of manufacturing a nitride-based light emitting device, characterized in that any one of AlInGaN is a laminated template substrate. 10. The method of claim 8, wherein the scattering induction film is made of a dielectric or a metal. The method of claim 7, wherein the height and width of the scattering induction pattern and the spacing between the scattering induction patterns correspond to wavelengths of light generated from the nitride based semiconductor layer, respectively. . The method of claim 7, wherein the height and width of the scattering induction pattern and the spacing between the scattering induction patterns are 0.1 to 5 μm, respectively. The method of claim 7, wherein the growing of the nitride based semiconductor layer including a plurality of layers on the entire surface of the substrate including the scattering induction pattern comprises: And a buffer layer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer on the entire surface of the substrate including the scattering induction pattern. The method of claim 7, wherein the step (d) of forming the scattering guide groove in the nitride-based semiconductor layer by removing the scattering guide pattern, The method of manufacturing a nitride-based light emitting device, characterized in that for removing the scattering induction pattern using wet etching. 8. The method of claim 7, further comprising the step (b) of growing a nitride based semiconductor layer comprising a plurality of layers on the front surface of the substrate including the scattering induction pattern, and on the upper surface of the nitride based semiconductor layer and the lower surface of the substrate. In between step (c) of mounting the separation baffle, The p-electrode is formed on the upper surface of the nitride-based semiconductor layer manufacturing method of the nitride-based light emitting device. The method of claim 7, after the step (e) of separating the substrate and the nitride semiconductor layer by applying mechanical stress to the separation auxiliary plate, Forming one of a transparent electrode and a reflective electrode on the entire surface of the nitride based semiconductor layer, and forming an n-electrode on the entire surface of the bottom surface of the nitride based semiconductor layer including the scattering guide groove. A method of manufacturing a nitride based light emitting device. The method of claim 7, after the step (e) of separating the substrate and the nitride semiconductor layer by applying mechanical stress to the separation auxiliary plate, Forming a n-electrode on a surface of the nitride-based semiconductor layer that is removed and partially removed, while forming a reflective plate on the entire surface of the nitride-based semiconductor layer; Is done by The portion from which the partial region is removed is a portion including the p-type cladding layer and the light emitting layer, and the nitride-based semiconductor layer exposed surface is an n-type cladding layer. The method of claim 7, wherein after the step (e) of separating the substrate and the nitride-based semiconductor layer, Forming at least one of a transparent electrode and a reflective electrode and a p-electrode on the front surface of the nitride based semiconductor layer, and forming an n-electrode on a front surface of the lower surface of the nitride based semiconductor layer including the scattering guide groove; A method of manufacturing a nitride-based light emitting device, characterized in that made. The method of claim 7, wherein after the step (e) of separating the substrate and the nitride-based semiconductor layer, The reflective plate and the p-electrode are formed on the entire surface of the nitride-based semiconductor layer, and a portion of the nitride-based semiconductor layer is removed, and the n-electrode is formed on the surface of the removed nitride-based semiconductor layer. It includes more steps, The portion from which the partial region is removed is a portion including the p-type cladding layer and the light emitting layer, and the nitride-based semiconductor layer exposed surface is an n-type cladding layer. (A) forming a plurality of scattering induction patterns spaced apart at regular intervals on the substrate; (B) growing a nitride based semiconductor layer including a plurality of layers on the entire surface of the substrate including the scattering induction pattern; Removing the scattering induction pattern to form scattering guide grooves in the nitride based semiconductor layer; And (D) forming a transparent electrode and a p-electrode on the front surface of the nitride-based semiconductor layer, and forming an n-electrode on the front surface of the lower surface of the substrate; Way. (A) forming a plurality of scattering induction patterns spaced apart at regular intervals on the substrate; (B) growing a nitride based semiconductor layer including a plurality of layers on the entire surface of the substrate including the scattering induction pattern; Removing the scattering induction pattern to form scattering guide grooves in the nitride based semiconductor layer; And The reflective plate and the p-electrode are formed on the entire surface of the nitride-based semiconductor layer, and a portion of the nitride-based semiconductor layer is removed, and the n-electrode is formed on the surface of the removed nitride-based semiconductor layer. Further comprising step (d), In the step (d), the portion of which the region is removed is a portion including the p-type cladding layer and the light emitting layer, and the nitride-based semiconductor layer exposed to the surface is an n-type cladding layer. Manufacturing method. 22. The method of claim 20 or 21, wherein forming a plurality of scattering induction patterns spaced apart at regular intervals on the substrate (a), Stacking a scattering induction film on the substrate; And forming a plurality of scattering induction patterns by patterning the scattering induction film at predetermined intervals. 22. The method of claim 20 or 21, wherein the substrate is a silicon (Si) substrate, GaAs substrate, MgO substrate, sapphire (Al ₂ O ₃ ) substrate, SiC substrate on any one or any one of these substrates GaN, InGaN , AlGaN, AlInGaN any one of the template substrate laminated method of manufacturing a nitride-based light emitting device. 23. The method of claim 22, wherein the scattering induction film is made of a dielectric or a metal. 22. The nitride system according to claim 20 or 21, wherein the height and width of the scattering induction pattern and the spacing between the scattering induction patterns correspond to wavelengths of light generated from the nitride based semiconductor layer, respectively. Method of manufacturing a light emitting device. 22. The method of claim 20 or 21, wherein the height and width of the scattering induction pattern, the spacing between the scattering induction patterns are 0.1 to 5㎛ each of the manufacturing method of the nitride-based light emitting device. The method of claim 20 or 21, wherein the step (b) of growing a nitride-based semiconductor layer consisting of a plurality of layers on the front surface of the substrate including the scattering induction pattern, And a buffer layer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer on the entire surface of the substrate including the scattering induction pattern. 22. The method of claim 20 or 21, wherein the step (c) of forming the scattering induction groove in the nitride based semiconductor layer by removing the scattering induction pattern, The method of manufacturing a nitride-based light emitting device, characterized in that for removing the scattering induction pattern using wet etching.

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