CN103579439B - Light emitting diode die and method of manufacturing the same - Google Patents
Light emitting diode die and method of manufacturing the same Download PDFInfo
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- CN103579439B CN103579439B CN201210319962.4A CN201210319962A CN103579439B CN 103579439 B CN103579439 B CN 103579439B CN 201210319962 A CN201210319962 A CN 201210319962A CN 103579439 B CN103579439 B CN 103579439B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims description 23
- 238000009413 insulation Methods 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000931526 Acer campestre Species 0.000 description 1
- 239000005952 Aluminium phosphide Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PPNXXZIBFHTHDM-UHFFFAOYSA-N aluminium phosphide Chemical compound P#[Al] PPNXXZIBFHTHDM-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Abstract
The invention discloses a light emitting diode core and a manufacturing method thereof. The light emitting diode die comprises a substrate, a semiconductor epitaxial stacked layer, a first electrode, a second electrode and a branch electrode group. The semiconductor epitaxial stack layer is formed on the substrate. The first electrode and the second electrode are formed on the semiconductor epitaxial stacking layer in an extending mode along the first direction. The branch electrode group comprises a first branch electrode and a second branch electrode, wherein the first branch electrode extends from the first electrode to the second electrode along a second direction perpendicular to the first direction, and the second branch electrode extends from the second electrode to the first electrode along a third direction perpendicular to the first direction.
Description
Technical field
The present invention relates to a kind of LED core and manufacture method thereof, and particularly relate to one there is the elastic LED core of size design and manufacture method thereof.
Background technology
In tradition LED core forming method, after semiconductor epitaxial stack layer is formed at substrate, carry out a cutting manufacture craft, to obtain several LED core.
But, current is single size planning for the dimension layout of LED core, and the size being obtained several LED core after causing cutting manufacture craft is all identical, does not quite have design flexibility.
Summary of the invention
It is an object of the invention to provide a kind of LED core and manufacture method thereof, in cutting manufacture craft, the LED core of different size can be obtained.
For reaching above-mentioned purpose, according to one embodiment of the invention, it is proposed to a kind of LED core. LED core comprises a substrate, one first type semiconductor layer, a luminescent layer, one the 2nd type semiconductor layer, one first electrode, one the 2nd electrode and a branch electrodes group. First type semiconductor layer, luminescent layer and the 2nd type semiconductor layer are sequentially stacked on substrate, and form semiconductor epitaxial layer stack, and exposed part first type semiconductor layer. First electrode is along a first party to extending to form in the first exposed type semiconductor layer. 2nd electrode is along first party to extending to form in the 2nd type semiconductor layer. Branch electrodes group comprises one first branch electrodes and one the 2nd branch electrodes. First branch electrodes along be perpendicular to first party to second direction, extend towards the 2nd electrode from the first electrode. 2nd branch electrodes along be perpendicular to first party to third direction, extend towards the first electrode from the 2nd electrode.
According to another embodiment of the present invention, it is proposed to the manufacture method of a kind of LED core. manufacture method comprises the following steps. one substrate is provided, sequentially form one first type semiconductor layer, a luminescent layer and one the 2nd type semiconductor layer on substrate, form semiconductor epitaxial layer stack, and have part first type semiconductor layer exposed, several sliver slit is formed on semiconductor epitaxial stack layer along a fourth direction, form an insulation layer in this sliver slit, form one first electrode, one the 2nd electrode and several branch electrodes groups are on semiconductor epitaxial stack layer, wherein the first electrode is along a first party to extending to form in the first exposed type semiconductor layer, 2nd electrode is along a first party to extending to form in the 2nd type semiconductor layer, and each branch electrodes group includes one first branch electrodes and one the 2nd branch electrodes, and first branch electrodes along be perpendicular to first party to second direction, extend towards the 2nd electrode from the first electrode, and it is formed in the first exposed type semiconductor layer, 2nd branch electrodes then along be perpendicular to this first party to third direction, extend towards the first electrode from the 2nd electrode, and it is formed in the 2nd type semiconductor layer, wherein each branch electrodes group difference position is in two sides of sliver slit, and fourth direction is parallel to second and third direction, wherein the first electrode and the 2nd electrode are through insulation layer,And, according to the size of required LED core, impose a sliver manufacture craft along those sliver slits of part, to obtain other LED core.
According to another embodiment of the present invention, it is proposed to the manufacture method of a kind of LED core. manufacture method comprises the following steps. one substrate is provided, sequentially form one first type semiconductor layer, a luminescent layer and one the 2nd type semiconductor layer on substrate, form semiconductor epitaxial layer stack, and have part first type semiconductor layer exposed, several sliver interface is formed inner in semiconductor epitaxial stack layer along a fourth direction, form one first electrode, one the 2nd electrode and several branch electrodes groups are on this semiconductor epitaxial stack layer, wherein the first electrode is along a first party to extending to form in the first exposed type semiconductor layer, 2nd electrode is along a first party to extending to form in the 2nd type semiconductor layer, and each branch electrodes group includes one first branch electrodes and one the 2nd branch electrodes, and first branch electrodes along be perpendicular to first party to second direction, extend towards the 2nd electrode from the first electrode, and it is formed in the first exposed type semiconductor layer, 2nd branch electrodes then along be perpendicular to first party to third direction, extend towards the first electrode from the 2nd electrode, and it is formed in the 2nd type semiconductor layer, wherein adjacent two branch electrodes groups difference positions are in two sides at sliver interface, and fourth direction is parallel to the 2nd, third direction, and, according to the size of required LED core, impose a sliver manufacture craft along those sliver interfaces of part, to obtain other LED core.
In order to there is better understanding the above-mentioned and other aspect of the present invention, special embodiment below, and coordinate appended accompanying drawing, it be described in detail below:
Accompanying drawing explanation
Figure 1A is the sectional view of the LED core of one embodiment of the invention;
Figure 1B is the vertical view of Figure 1A;
Fig. 2 A is the vertical view of the LED core of another embodiment of the present invention;
Fig. 2 B is sectional view along direction 2B-2B ' in Fig. 2 A;
Fig. 3 A is the vertical view of the LED core of another embodiment of the present invention;
Fig. 3 B is sectional view along direction 3B-3B ' in Fig. 3 A;
Fig. 4 is the vertical view of the LED core of another embodiment of the present invention;
Fig. 5 is the vertical view of the LED core of another embodiment of the present invention;
Fig. 6 A to Fig. 6 D is the process drawing of the LED core of one embodiment of the invention;
Fig. 7 is the process drawing of the LED core of another embodiment of the present invention;
Fig. 8 A to Fig. 8 D is the process drawing of the LED core of another embodiment of the present invention.
Main element nomenclature
100,200,300,400,500: LED core
110: substrate
110s1: the first side, border
110s2: the second boundary side
110s3: the three side, border
110s4: the four side, border
120: semiconductor epitaxial stack layer
121: the first type semiconductor layer
122: luminescent layer
123: the two type semiconductor layer
130: the first electrodes
140: the two electrodes
150,450,550: branch electrodes group
151: the first branch electrodes
152: the two branch electrodes
260: sliver reference signs
270: sliver interface
380: sliver slit
390: insulation layer
D1: first party to
D2: second direction
D3: third direction
D4: fourth direction
Embodiment
Please refer to Figure 1A, it illustrates the sectional view of the LED core according to one embodiment of the invention.
LED core 100 comprises substrate 110, semiconductor epitaxial stack layer 120, first electrode 130, the 2nd electrode 140 and branch electrodes group 150.
Substrate 110 is such as the substrate that silicon substrate, gallium nitride base board, silicon carbide substrate, sapphire substrate or more state that substrate carries out the processing such as graphical again, but not as limit.
Semiconductor epitaxial stack layer 120 comprises the first type semiconductor layer 121, luminescent layer 122 and the 2nd type semiconductor layer 123, and it is sequentially stacked on substrate 110 and exposed part first type semiconductor layer 121.
For P type, the 2nd type semiconductor layer 123 is N-type to first type semiconductor layer 121, or the first type semiconductor layer 121 for N-type, the 2nd type semiconductor layer 123 is P type. p type semiconductor layer is such as the nitride-base semiconductor layer of the elements such as magnesium-doped (Mg), boron (B), indium (In), gallium (Ga) or aluminium (Al), and n type semiconductor layer is such as the nitride-base semiconductor layer of the elements such as doped silicon (Si), phosphorus (P), antimony (Ti), arsenic (As). luminescent layer 122 can be three or five race two element compound semiconductors (is such as gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), gan (GaN)), three or five race's multielement compound semiconductors (are such as aluminum gallium arsenide (AlGaAs), phosphorus gallium arsenide (GaAsP), aluminium phosphide gallium indium (AlGaInP), aluminum indium arsenide gallium (AlInGaAs)) or two or six race two element compound semiconductors (be such as cadmium selenide (CdSe), Cadmium Sulfide (CdS), zinc selenide (ZnSe)).
Please refer to Figure 1B, it illustrates the vertical view of Figure 1A, and wherein Figure 1A is sectional view along direction 1A-1A ' in Figure 1B.
First electrode 130 extends to form in the first exposed type semiconductor layer 121 along first party to D1. In this example, the first electrode 130 extends to the second boundary side 110s2 from the first side, border 110s1 of LED core 100, and wherein the first side, border 110s1 is relative to the second boundary side 110s2.
2nd electrode 140 extends to form along first party to D1 in the 2nd type semiconductor layer 123(Figure 1A) on. In this example, the 2nd electrode 140 extends to the second boundary side 110s2 from the first side, border 110s1 of LED core 100.
Branch electrodes group 150 comprises the first branch electrodes 151 and the 2nd branch electrodes 152, wherein the first branch electrodes 151 is along being perpendicular to the second direction D2 of first party to D1, extend towards the 2nd electrode 140 from the first electrode 130, and the 2nd branch electrodes 152 is along being perpendicular to the third direction D3 of first party to D1, extending towards the first electrode 130 from the 2nd electrode 140, wherein second direction D2 is substantial parallel with third direction D3 and direction is contrary.
Please refer to Fig. 2 A, it illustrates the vertical view of the LED core according to another embodiment of the present invention. LED core 200 comprises substrate 110, semiconductor epitaxial stack layer 120, first electrode 130, the 2nd electrode 140, two branch electrodes group 150, at least one sliver reference signs 260 and at least one sliver interface 270. In this example, two branch electrodes groups 150 are symmetrical, so also can be asymmetric.
Sliver reference signs 260 is formed on semiconductor epitaxial stack layer 120. This sliver reference signs 260 provides " separation " or " be not separated " and reference, such as; "-" symbol represents " separation "; therefore in sliver manufacture craft; corresponding "-" region of symbol is separated and forms other LED core 200; and "+" symbol represents " be not separated ", therefore in sliver is made, correspondence "+" region of symbol can not be separated.Although figure does not illustrate, so herein mentioned all embodiments and all optionally apply this sliver reference signs 260 and complete sliver manufacture craft.
Please refer to Fig. 2 B, it illustrates in Fig. 2 A the sectional view along direction 2B-2B '. Sliver interface 270 is formed by laser manufacturing process, its semiconductor epitaxial stack layer 120 between two branch electrodes groups 150 is inner, it is such as extend substrate 110 inside, and extend to the 4th side, border 110s4 from the 3rd side, border 110s3 of substrate 110, wherein the 3rd side, border 110s3 is relative to the 4th side, border 110s4.
Please refer to Fig. 3 A, it illustrates the vertical view of the LED core according to another embodiment of the present invention. LED core 300 comprises substrate 110, semiconductor epitaxial stack layer 120, first electrode 130, the 2nd electrode 140, two branch electrodes group 150, at least one sliver slit 380 and insulation layer 390. In this example, two branch electrodes groups 150 are symmetrical, so also can be asymmetric.
Please refer to Fig. 3 B, it illustrates in Fig. 3 A the sectional view along direction 3B-3B '. Sliver slit 380 is that cutter or laser cutting are formed, its between two branch electrodes groups 150 semiconductor epitaxial stack layer 120 surface, be such as the part extending to substrate 110 from the 2nd type semiconductor layer 123. Insulation layer 390 is formed in sliver slit 380, to isolate the first electrode 130, the 2nd electrode 140 and sliver slit 380, say further, owing to insulation layer 390 has filled up sliver slit 380, make the first electrode 130 above sliver slit 380 and the 2nd electrode 140 be unlikely to drop in sliver slit 380 break (electrical open circuit), therefore formed continuous electrode. In addition, the optical maser wavelength that formation sliver slit 380 and sliver interface 270 use is different, causes the sintering vestige degree of depth different.
Although the quantity of branch electrodes is for two explanations in the branch electrodes group 150 of above-described embodiment, so this is not used to the restriction embodiment of the present invention, the following is further illustration.
Please refer to Fig. 4, it illustrates the vertical view of the LED core according to another embodiment of the present invention. LED core 400 comprises substrate 110, semiconductor epitaxial stack layer 120, first electrode 130, the 2nd electrode 140 and branch electrodes group 450.
In this example, in branch electrodes group 450, the quantity of branch electrodes is for three explanations. Specifically, branch electrodes group 450 comprises 2 the 2nd branch electrodes 152 and one first branch electrodes 151, and wherein the first branch electrodes 151 extends between 2 the 2nd branch electrodes 152. In another example, although figure does not illustrate, right branch electrodes group 450 can comprise 2 first branch electrodes 151 and one the 2nd branch electrodes 152, and wherein the 2nd branch electrodes 152 extends between 2 first branch electrodes 151.
In another embodiment, the quantity of the branch electrodes group 450 of LED core 400 is two groups and also comprises at least one sliver interface 270, and wherein sliver interface 270 is between two branch electrodes groups 450. The structure at sliver interface 270, similar in appearance to the explanation of Fig. 2 A and Fig. 2 B, is held this and is repeated no more.
In another embodiment, the quantity of the branch electrodes group 450 of LED core 400 is two groups and also comprises at least one sliver slit 380 and insulation layer 390, and wherein sliver slit 380 is between two branch electrodes groups 450. Sliver slit 380 and insulation layer 390 structure, similar in appearance to the explanation of Fig. 3 A and Fig. 3 B, are held this and are repeated no more.
Please refer to Fig. 5, it illustrates the vertical view of the LED core according to another embodiment of the present invention. LED core 500 comprises substrate 110, semiconductor epitaxial stack layer 120, first electrode 130, the 2nd electrode 140 and branch electrodes group 550.
In this example, in branch electrodes group 550, the quantity of branch electrodes is for four explanations. Specifically, branch electrodes group 550 comprises 2 first branch electrodes 151 and 2 the 2nd branch electrodes 152, the one of 2 first branch electrodes 151 extends between 2 the 2nd branch electrodes 152, and the one of 2 the 2nd branch electrodes 152 extends between 2 first branch electrodes 151.
In another embodiment, the quantity of the branch electrodes group 550 of LED core 500 is two groups and also comprises at least one sliver interface 270, and wherein sliver interface 270 is between two branch electrodes groups 450. The structure at sliver interface 270, similar in appearance to the explanation of Fig. 2 A and Fig. 2 B, is held this and is repeated no more.
In another embodiment, the quantity of the branch electrodes group 550 of LED core 500 is two groups and also comprises at least one sliver slit 380 and insulation layer 390, and wherein sliver slit 380 is between two branch electrodes groups 550. Sliver slit 380 and insulation layer 390 structure, similar in appearance to the explanation of Fig. 3 A and Fig. 3 B, are held this and are repeated no more.
In summary, the embodiment of the present invention does not limit the quantity of branch electrodes in branch electrodes group, and it can be any amount, and the group number of branch electrodes group can more than more than two groups.
Please refer to Fig. 6 A to Fig. 6 D, it illustrates the process drawing of the LED core according to one embodiment of the invention.
As shown in Figure 6A, it is provided that substrate 110.
As shown in Figure 6A, sequentially form the first type semiconductor layer 121, luminescent layer 122 and the 2nd type semiconductor layer 123 on substrate 110, and form semiconductor epitaxial stack layer 120, and the first type semiconductor layer 121 of part is out exposed.
As shown in Figure 6B, above-mentioned Fig. 6 A is sectional view along direction 6A-6A ' in Fig. 6 B. Can adopt is such as laser manufacturing process, forms several sliver interface 270 along first party to D1 and fourth direction D4 inner in semiconductor epitaxial stack layer 120, and sliver interface 270 is such as be formed at substrate 110 inside. Its decrease in intensity of the forming region at sliver interface 270, makes follow-up sliver manufacture craft carry out effortlessly.
As shown in Figure 6 C, form at least one first electrode 130, at least one 2nd electrode 140 and several branch electrodes groups 150 are on semiconductor epitaxial stack layer 120, wherein the first electrode 130 extends to form along first party to D1 in first exposed type semiconductor layer 121(Figure 1A) on, 2nd electrode 140 extends to form along first party to D1 in the 2nd type semiconductor layer 123(Figure 1A) on, and each branch electrodes group 150 includes the first branch electrodes 151 and the 2nd branch electrodes 152, and first branch electrodes 151 along being perpendicular to the second direction D2 of first party to D1, extend towards the 2nd electrode 140 from the first electrode 130, and it is formed in the first exposed type semiconductor layer 121, 2nd branch electrodes 152 is then perpendicular to the third direction D3 of first party to D1 in edge, extend towards the first electrode 130 from the 2nd electrode 140, and it is formed in the 2nd type semiconductor layer 123, wherein adjacent two branch electrodes groups 150 difference positions are in two sides at sliver interface 270, and fourth direction D4 is parallel to second direction D2 and third direction D3.
In another embodiment, the step of Fig. 6 C can be commutative with the execution order of the step of Fig. 6 B.
The minimum unit of the region definition LED core of part first electrode 130, part the 2nd electrode 140 and single branch electrodes group 150, when follow-up sliver manufacture craft (Fig. 6 D), size according to required LED core, can obtain the LED core comprising at least one minimum unit.
In addition, when forming the first electrode 130, the 2nd electrode 140 and branch electrodes group 150, sliver reference signs 260 can be formed in the lump in the 2nd type semiconductor layer 123, with as in follow-up sliver manufacture craft " whether be separated " reference. Sliver reference signs 260 can be formed at the region, edge of substrate 110, or the adjacent domain at corresponding sliver interface 270 is formed. Depending on the forming region of sliver reference signs 260, after follow-up sliver manufacture craft, sliver reference signs 260 can remain in each or some LED core, does not so also remain in arbitrary LED core.
As shown in Figure 6 D, according to the size of required LED core, impose sliver manufacture craft along those sliver interfaces 270 of part, to obtain the LED core 100 of at least one separation. In this example, only obtaining LED core 100 after sliver manufacture craft, so this is not used to the restriction embodiment of the present invention, below illustrates.
Please refer to Fig. 7, it illustrates the process drawing of the LED core according to another embodiment of the present invention. Size according to required LED core, some of those sliver interfaces 270 of part, edge impose sliver manufacture craft, can obtain LED core 100 and 200 simultaneously. In another embodiment, some of those sliver interfaces 270 of part, edge impose sliver manufacture craft, can only obtain LED core 200.
In addition, the size of LED core is defined by sliver reference signs 260. Make in sliver manufacture craft, impose sliver manufacture craft according to sliver reference signs 260 and obtain the size of required LED core.
Please refer to Fig. 8 A to Fig. 8 D, it illustrates the process drawing of the LED core according to another embodiment of the present invention.
Substrate 110 as shown in Figure 6A is provided. Then, sequentially form the first type semiconductor layer 121 shown in Fig. 6 A, luminescent layer 122 and the 2nd type semiconductor layer 123 on substrate 110, and form semiconductor epitaxial stack layer 120, and have part first type semiconductor layer 121 out exposed.
As shown in Figure 8 A, can adopt is such as cutter cutting, forming several sliver slit 380 along first party to D1 and fourth direction D4 on semiconductor epitaxial stack layer 120, such as, sliver slit 380 extends to a part for substrate 110 (Fig. 3 B) from the first type semiconductor layer 121.
As shown in Figure 8 B, insulation layer 390 is formed in sliver slit 380.
As shown in Figure 8 C, form at least one first electrode 130, at least one 2nd electrode 140 and several branch electrodes groups 150 are on semiconductor epitaxial stack layer 120, wherein the first electrode 130 extends to form along first party to D1 in first exposed type semiconductor layer 121(Fig. 3 B) on, 2nd electrode 140 extends to form in the 2nd type semiconductor layer 123 along first party to D1, and each branch electrodes group 150 includes the first branch electrodes 151 and the 2nd branch electrodes 152, and first branch electrodes 151 along being perpendicular to the second direction D2 of first party to D1, extend towards the 2nd electrode 140 from the first electrode 130, and it is formed in the first exposed type semiconductor layer 121, 2nd branch electrodes 152 is then perpendicular to the third direction D3 of first party to D1 in edge, extend towards the first electrode 130 from the 2nd electrode 140, and it is formed in the 2nd type semiconductor layer 123, wherein adjacent two branch electrodes groups 150 difference positions are in two sides of sliver slit 380, and fourth direction D4 is parallel to second direction D2 and third direction D3, wherein the first electrode 130 and the 2nd electrode 140 are through insulation layer 390.
In addition, when forming the first electrode 130, the 2nd electrode 140 and branch electrodes group 150, sliver reference signs 260 can be formed in the lump in the 2nd type semiconductor layer 123, with as in follow-up sliver manufacture craft " whether sliver " reference. Sliver reference signs 260 can be formed at the region, edge of substrate 110, or the adjacent domain at corresponding sliver interface 270 is formed.
As in fig. 8d, according to the size of required LED core, along those sliver slits 380, at least some imposes sliver manufacture craft, to obtain the LED core 300 of at least one separation.
In sum, although disclosing the present invention in conjunction with above embodiment, however itself and be not used to limit the present invention. It is familiar with this skill patient in the technical field of the invention, without departing from the spirit and scope of the present invention, can be used for a variety of modifications and variations. Therefore, protection scope of the present invention should with being as the criterion that the claim enclosed defines.
Claims (18)
1. a LED core, comprising:
Substrate;
First type semiconductor layer, luminescent layer and the 2nd type semiconductor layer, be sequentially stacked on this substrate, and form semiconductor epitaxial layer stack, and this first type semiconductor layer of exposed part;
First electrode, along a first party to extending to form in the first type semiconductor layer that this is exposed;
2nd electrode, along this first party to extending to form in the 2nd type epitaxial semiconductor layer;
Branch electrodes group, comprising:
First branch electrodes, along be perpendicular to this first party to second direction, extend towards the 2nd electrode from this first electrode; And
2nd branch electrodes, along be perpendicular to this first party to third direction, extend towards this first electrode from the 2nd electrode; And
Two these branch electrodes groups, these two branch electrodes groups are symmetrical,
Wherein this semiconductor epitaxial stack layer comprises many roads sliver slit, this sliver slit this semiconductor epitaxial stack layer surface between these two branch electrodes groups, and at this sliver slit and this first, second electrode boundary place, there is insulation layer, to isolate this first, second electrode and this sliver slit.
2. LED core as claimed in claim 1, wherein this branch electrodes group comprises two the 2nd branch electrodes, and this first branch electrodes extends between these two the 2nd branch electrodes.
3. LED core as claimed in claim 1, wherein this branch electrodes group comprises two these the first branch electrodes and two the 2nd branch electrodes, the one of these two the first branch electrodes extends between these two the 2nd branch electrodes, and the one of these two the 2nd branch electrodes extends between these two first branch electrodes.
4. LED core as claimed in claim 1, wherein this sliver slit is that cutter cutting is formed.
5. LED core as according to any one of Claims 1-4, wherein this first type semiconductor layer is P type, and the 2nd type semiconductor layer is N-type, or this first type semiconductor layer is N-type and the 2nd type semiconductor layer is P type.
6. LED core as claimed in claim 1, also comprises a sliver reference signs, is formed on this semiconductor epitaxial stack layer.
7. a LED core, comprising:
Substrate;
First type semiconductor layer, luminescent layer and the 2nd type semiconductor layer, be sequentially stacked on this substrate, and form semiconductor epitaxial layer stack, and this first type semiconductor layer of exposed part;
First electrode, along a first party to extending to form in the first type semiconductor layer that this is exposed;
2nd electrode, along this first party to extending to form in the 2nd type epitaxial semiconductor layer;
Branch electrodes group, comprising:
First branch electrodes, along be perpendicular to this first party to second direction, extend towards the 2nd electrode from this first electrode; And
2nd branch electrodes, along be perpendicular to this first party to third direction, extend towards this first electrode from the 2nd electrode; And
Two these branch electrodes groups, these two branch electrodes groups are symmetrical,
Wherein this semiconductor epitaxial stack layer comprises sliver interface, and this sliver interface this semiconductor epitaxial stack layer between these two branch electrodes groups is inner.
8. LED core as claimed in claim 7, wherein this sliver interface is that laser manufacturing process is completed.
9. LED core as according to any one of claim 7 to 8, wherein this first type semiconductor layer is P type, and the 2nd type semiconductor layer is N-type, or this first type semiconductor layer is N-type and the 2nd type semiconductor layer is P type.
10. LED core as claimed in claim 7, also comprises a sliver reference signs, is formed on this semiconductor epitaxial stack layer.
The manufacture method of 11. 1 kinds of LED core, comprising:
One substrate is provided;
Sequentially form one first type semiconductor layer, a luminescent layer and one the 2nd type semiconductor layer on this substrate, form semiconductor epitaxial layer stack, and have this first type semiconductor layer of part exposed;
Many roads sliver slit is formed on this semiconductor epitaxial stack layer along a fourth direction;
Form an insulation layer in this sliver slit;
Form one first electrode, one the 2nd electrode and multiple branch electrodes group are on this semiconductor epitaxial stack layer, wherein this first electrode is along a first party to extending to form in the first type semiconductor layer that this is exposed, 2nd electrode is along a first party to extending to form in the 2nd type semiconductor layer, and respectively this branch electrodes group includes one first branch electrodes and one the 2nd branch electrodes, and this first branch electrodes along be perpendicular to this first party to second direction, extend towards the 2nd electrode from this first electrode, and it is formed in this first exposed type semiconductor layer, 2nd branch electrodes then along be perpendicular to this first party to third direction, extend towards this first electrode from the 2nd electrode, and it is formed in the 2nd type semiconductor layer, wherein respectively this branch electrodes group distinguishes position in two sides of this sliver slit, and this fourth direction is parallel to this second and third direction, wherein this first electrode and the 2nd electrode are through this insulation layer, and
Size according to required LED core, imposes a sliver manufacture craft along those sliver slits of part, to obtain other LED core.
12. manufacture method as claimed in claim 11, wherein those sliver slits complete with a cutter cutting or a laser.
13. manufacture method as according to any one of claim 11 to 12, wherein this first type semiconductor layer is P type and the 2nd type semiconductor layer is N-type, or this first type semiconductor layer is N-type and the 2nd type semiconductor layer is P type.
14. manufacture method as claimed in claim 12, wherein also comprise a sliver reference signs on this semiconductor stack epitaxial film so that this cutter or this laser can cut according to this and form this sliver slit.
The manufacture method of 15. 1 kinds of LED core, comprising:
One substrate is provided;
Sequentially form one first type semiconductor layer, a luminescent layer and one the 2nd type semiconductor layer on this substrate, form semiconductor epitaxial layer stack, and have this first type semiconductor layer of part exposed;
Sliver interface, many roads is formed inner in this semiconductor epitaxial stack layer along a fourth direction;
Form one first electrode, one the 2nd electrode and multiple branch electrodes group are on this semiconductor epitaxial stack layer, wherein this first electrode is along a first party to extending to form in the first type semiconductor layer that this is exposed, 2nd electrode is along a first party to extending to form in the 2nd type semiconductor layer, and respectively this branch electrodes group includes one first branch electrodes and one the 2nd branch electrodes, and this first branch electrodes along be perpendicular to this first party to second direction, extend towards the 2nd electrode from this first electrode, and it is formed in this first exposed type semiconductor layer, 2nd branch electrodes then along be perpendicular to this first party to third direction, extend towards this first electrode from the 2nd electrode, and it is formed in the 2nd type semiconductor layer, wherein adjacent two these branch electrodes groups difference positions are in two sides at this sliver interface, and this fourth direction is parallel to the 2nd, third direction, and
Size according to required LED core, imposes a sliver manufacture craft along those sliver interfaces of part, to obtain other LED core.
16. manufacture method as claimed in claim 15, wherein those sliver interfaces complete with laser manufacturing process.
17. manufacture method as described in claim 15 or 16, wherein this first type semiconductor layer is P type and the 2nd type semiconductor layer is N-type, or this first type semiconductor layer is N-type and the 2nd type semiconductor layer is P type.
18. manufacture method as claimed in claim 16, wherein also comprise a sliver reference signs on this semiconductor stack epitaxial film so that this laser manufacturing process can form those sliver interfaces according to this.
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|---|---|---|---|
| TW101128297 | 2012-08-06 | ||
| TW101128297A TW201407813A (en) | 2012-08-06 | 2012-08-06 | Light emitting diode die and manufacturing method thereof |
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| CN103579439B true CN103579439B (en) | 2016-06-15 |
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| CN106941107B (en) * | 2016-01-05 | 2019-09-27 | 群创光电股份有限公司 | LED core substrate and its apply display device |
| TWI720725B (en) * | 2019-12-11 | 2021-03-01 | 財團法人工業技術研究院 | Pixel structure and manufacturing method thereof, and display having the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102376837A (en) * | 2010-08-23 | 2012-03-14 | 亚世达科技股份有限公司 | Light emitting diode |
| WO2012067311A1 (en) * | 2010-11-18 | 2012-05-24 | Seoul Opto Device Co., Ltd. | Light emitting diode chip having electrode pad |
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| JP5197654B2 (en) * | 2010-03-09 | 2013-05-15 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
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| CN102376837A (en) * | 2010-08-23 | 2012-03-14 | 亚世达科技股份有限公司 | Light emitting diode |
| WO2012067311A1 (en) * | 2010-11-18 | 2012-05-24 | Seoul Opto Device Co., Ltd. | Light emitting diode chip having electrode pad |
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