CN103579403A - Silicon-film three-stacking-layer solar cell - Google Patents
Silicon-film three-stacking-layer solar cell Download PDFInfo
- Publication number
- CN103579403A CN103579403A CN201210278972.8A CN201210278972A CN103579403A CN 103579403 A CN103579403 A CN 103579403A CN 201210278972 A CN201210278972 A CN 201210278972A CN 103579403 A CN103579403 A CN 103579403A
- Authority
- CN
- China
- Prior art keywords
- layer
- battery
- cell
- solar cell
- band gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical group [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 5
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 4
- 229910052986 germanium hydride Inorganic materials 0.000 description 4
- 238000003475 lamination Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0321—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System
- H01L31/03765—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic System including AIVBIV compounds or alloys, e.g. SiGe, SiC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The invention relates to a silicon-film three-stacking-layer solar cell. The silicon-film three-stacking-layer solar cell comprises a substrate, a top cell, a middle cell, a bottom cell and a cell back electrode, wherein the substrate, the top cell, the middle cell, the bottom cell and the cell back electrode are stacked in sequence from bottom to top, the top cell comprises a window layer P1, a top cell layer I1 and a top cell layer N1, the window layer P1, the top cell layer I1 and the top cell layer N1 are stacked in sequence, the middle cell is an amorphous silicon middle cell, the middle cell comprises a window layer P2, a middle cell layer I2and a middle cell layer N2, the window layer P2, the middle cell layer I2 and the middle cell layer N2 are stacked in sequence, the bottom cell comprises a cell window layer P3, a bottom cell layer I3 and a bottom cell layer N3, and the cell window layer P3, the bottom cell layer I3 and the bottom cell layer N3 are stacked in sequence. According to the silicon-film three-stacking-layer solar cell, due to the fact that the cell with a three-stacking-layer structure is used, conversion efficiency can be improved, the silicon-film three-stacking-layer solar cell with the structure is applicable to deposition of a single-chamber PECVD device, and preparation cost is low.
Description
Technical field
The present invention relates to a kind of technical field of solar cells; Be particularly related to a kind of silicon thin film three-layer stacked solar cell.
Background technology
Silicon-film solar-cell has raw materials consumption few, is easy to large area serialization and produces, and preparation process is polluted the advantages such as little; But exist battery preparation to rely on external expensive device, problem that battery efficiency is lower.Traditional a-Si:H/ μ c-Si:H laminated cell can obtain higher efficiency, but in the middle of need to add TCO to increase anti-layer, complex process, and microcrystalline silicon deposition is high to equipment requirement; Traditional a-Si:H/a-Si:H and a-Si:H/a-SiGe:H are easy to realize in simple deposited in single chamber equipment, and its improved efficiency space is less; Traditional a-Si:H/a-SiGe:H/a-SiGe:H is also easy to realizing in simple deposited in single chamber equipment, and can realize higher efficiency, but preparation process need be with more expensive GeH4 gas.
Summary of the invention
The object of the invention is to overcome the defect that prior art exists, the silicon thin film that a kind of conversion efficiency is high, cost of manufacture is low three-layer stacked solar cell is provided.
The technical scheme that realizes the object of the invention is: a kind of silicon thin film three-layer stacked solar cell, comprises the substrate, top battery, intermediate cell, end battery and the battery back electrode that stack gradually from the bottom up; Described top battery comprises the P stacking gradually
1window layer, top battery I
1layer and top battery N
1layer; Described intermediate cell is amorphous silicon intermediate cell, and intermediate cell comprises the P stacking gradually
2window layer, intermediate cell I
2layer and intermediate cell N
2layer; Battery of the described end comprises the battery window P stacking gradually
3layer, end battery I
3layer and end battery N
3layer.
P described in technique scheme
1window layer, top battery I
1layer and top battery N
1layer is respectively a-SiC:H, a-SiC:H and a-Si:H/ μ c-Si:H; Described P
2window layer, intermediate cell I
2layer and intermediate cell N
2layer is respectively μ c-SiC:H/a-SiC:H, a-Si:H and nc-SiOx:H/ μ c-Si:H; Described battery window P
3layer, end battery I
3layer and end battery N
3layer is respectively μ c-Si:H/a-Si:H, a-SiGe:H and μ c-Si:H.
Battery I in top described in technique scheme
1the fixed band gap structure that layer is carbon doping or the gradient band gap structure of carbon doping.
Battery I in top described in technique scheme
1the band gap adjustable range of layer is 1.8-1.95eV, and thickness is 50-100nm.
Intermediate cell I described in technique scheme
2the band gap width of layer is 1.68-1.72eV, and thickness is 200-300nm.
Intermediate cell N described in technique scheme
2the N-type nc-SiOx:H that layer is led for high electricity; The refractive index of described N-type nc-SiOx:H is 2.0 ± 5%, and optical band gap is greater than 2.0eV.
Described in technique scheme, end battery is a-SiGe:H, and end battery is the gradient band gap structure of Ge doping.
End battery I described in technique scheme
3the adjustable range of layer band gap is 1.4-1.75eV, and thickness is 100-150nm.
Described in technique scheme, battery back electrode is AZO/Al composite membrane; The thickness of described AZO is 80nm, and the thickness of Al film is 200nm.
Described in technique scheme, substrate is TCO Conducting Glass.
The present invention has positive effect:
(1) the present invention utilizes three lamination structure batteries, can improve conversion efficiency, and this structure is suitable for single chamber PECVD equipment deposition, and preparation cost is low.
(2) top of the present invention battery adopts non-crystal silicon carbon structure, and it is close with P type non-crystal silicon carbon band gap, has reduced the band gap mismatch of P layer and I layer, can effectively improve conversion efficiency and the stability of top battery and corresponding laminated cell.
(3) top of the present invention battery adopts non-crystal silicon carbon structure, and amorphous silicon intermediate cell adopts amorphous silicon structures, and relatively traditional amorphous silicon intermediate cell and end battery are used three laminated construction of amorphous silicon germanium simultaneously, have significantly reduced the consumption of expensive GeH4; Simultaneously, non-crystal silicon carbon top battery greater band gap, the overall band gap of three laminated cells is promoted, and at the bottom of its amorphous silicon germanium, at the bottom of the SiGe of relatively traditional amorphous silicon/amorphous silicon germanium/amorphous silicon germanium three laminations of battery, battery band gap increases, and this has also reduced the consumption of GeH4 to a certain extent.
(4) non-crystal silicon carbon of the present invention and amorphous silicon germanium are used gradient band gap structure, have improved the performance of battery, can reduce to a certain extent the consumption of GeH4 gas simultaneously.
(5) the N-type nc-SiOx:H layer that at the bottom of amorphous silicon intermediate cell of the present invention and amorphous silicon germanium, the N layer between battery adopts high electricity to lead, it is when serving as N layer, also played the effect that increases anti-film, this has improved the currents match of amorphous silicon intermediate cell and top battery and end battery, having solved the high electric current of middle amorphous silicon battery needs the problem of higher caliper, make amorphous silicon intermediate cell reduced thickness, like this, the Cost And Performance of battery all improves; Meanwhile, other layer of N-type nc-SiOx:H layer and battery completes at same reaction chamber, has solved traditional layer of metal oxide that adds separately and increase the problem of anti-film between two batteries, has simplified preparation method, has reduced preparation cost.
Accompanying drawing explanation
For content of the present invention is more easily expressly understood, according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation, wherein below
Fig. 1 is structural representation of the present invention;
Fig. 2 is the structural representation of top battery of the fixed band gap structure of carbon of the present invention doping;
Fig. 3 is the structural representation of top battery of the gradient band gap structure of carbon of the present invention doping;
Fig. 4 is the structural representation of end battery of the gradient band gap structure of Ge of the present invention doping;
1. substrates in figure, 2. top battery, 21.P
1window layer, 22. top battery I
1layer, 23. top battery N
1layer, 3. intermediate cell, 31.P
2window layer, 32. intermediate cell I
2layer, 33. intermediate cell N
2layer, 4. end battery, 41. battery window P
3layer, 42. end battery I
3layer, 43. end battery N
3layer, 5. battery back electrode.
Embodiment
See Fig. 1-4, the present invention includes the substrate 1, top battery 2, intermediate cell 3, end battery 4 and the battery back electrode 5 that stack gradually from the bottom up.Substrate 1 is TCO Conducting Glass.
Intermediate cell 3 is amorphous silicon intermediate cell, and intermediate cell 3 comprises the P stacking gradually
2 window layer 31, intermediate cell I
2 layer 32 and intermediate cell N
2layer 33; P
2window layer 31, intermediate cell I
2 layer 32 and intermediate cell N
2layer 33 is respectively μ c-SiC:H/a-SiC:H, a-Si:H and nc-SiOx:H/ μ c-Si:H.Intermediate cell I
2the band gap width of layer 32 is 1.68-1.72eV, and thickness is 200-300nm; Intermediate cell N
2the layer 33 N-type nc-SiOx:H leading for high electricity; The refractive index of N-type nc-SiOx:H is 2.0 ± 5%, and optical band gap is greater than 2.0eV; .
Wherein, a-Si is amorphous silicon membrane; μ c-Si is microcrystalline silicon film; A-Si:H is hydrogenation non crystal silicon film; μ c-Si:H is microcrystalline hydrogenated silicon film; A-SiC:H is the hydrogenated amorphous silicon layer of carbon dope; μ c-SiC:H is the microcrystalline hydrogenated silicon layer of carbon dope; Nc-SiOx:H is that crystal silicon (microcrystal silicon) layer is received in oxygen-doped hydrogenation; A-SiGe:H is hydrogenated amorphous germanium-silicon layer; A-Si:H/ μ c-Si:H is the battery of two laminations, and one deck is hydrogenated amorphous silion cell, and one deck is microcrystalline hydrogenated silicon battery; By that analogy.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a silicon thin film three-layer stacked solar cell, is characterized in that: comprise the substrate (1), top battery (2), intermediate cell (3), end battery (4) and the battery back electrode (5) that stack gradually from the bottom up; Described top battery (2) comprises the P stacking gradually
1window layer (21), top battery I
1layer (22) and top battery N
1layer (23); Described intermediate cell (3) is amorphous silicon intermediate cell, and intermediate cell (3) comprises the P stacking gradually
2window layer (31), intermediate cell I
2layer (32) and intermediate cell N
2layer (33); Battery of the described end (4) comprises the battery window P stacking gradually
3layer (41), end battery I
3layer (42) and end battery N
3layer (43).
2. silicon thin film three-layer stacked solar cell according to claim 1, is characterized in that: described P
1window layer (21), top battery I
1layer (22) and top battery N
1layer (23) is respectively a-SiC:H, a-SiC:H and a-Si:H/ μ c-Si:H; Described P
2window layer (31), intermediate cell I
2layer (32) and intermediate cell N
2layer (33) is respectively μ c-SiC:H/a-SiC:H, a-Si:H and nc-SiOx:H/ μ c-Si:H; Described battery window P
3layer (41), end battery I
3layer (42) and end battery N
3layer (43) is respectively μ c-Si:H/ a-Si:H, a-SiGe:H and μ c-Si:H.
3. silicon thin film three-layer stacked solar cell according to claim 2, is characterized in that: described top battery I
1the fixed band gap structure that layer (22) is carbon doping or the gradient band gap structure of carbon doping.
4. silicon thin film three-layer stacked solar cell according to claim 3, is characterized in that: described top battery I
1the band gap adjustable range of layer (22) is 1.8-1.95eV, and thickness is 50-100nm.
5. silicon thin film three-layer stacked solar cell according to claim 4, is characterized in that: described intermediate cell I
2the band gap width of layer (32) is 1.68-1.72eV, and thickness is 200-300nm.
6. silicon thin film three-layer stacked solar cell according to claim 5, is characterized in that: described intermediate cell N
2the N-type nc-SiOx:H that layer (33) is led for high electricity; The refractive index of described N-type nc-SiOx:H is 2.0 ± 5%, and optical band gap is greater than 2.0eV.
7. silicon thin film three-layer stacked solar cell according to claim 6, is characterized in that: battery of the described end (4) is a-SiGe:H, and end battery (4) is the gradient band gap structure of Ge doping.
8. silicon thin film three-layer stacked solar cell according to claim 7, is characterized in that: described end battery I
3the adjustable range of layer (42) band gap is 1.4-1.75eV, and thickness is 100-150nm.
9. silicon thin film three-layer stacked solar cell according to claim 8, is characterized in that: described battery back electrode (5) is AZO/Al composite membrane; The thickness of described AZO is 80nm, and the thickness of Al film is 200nm.
10. silicon thin film three-layer stacked solar cell according to claim 9, is characterized in that: described substrate (1) is TCO Conducting Glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210278972.8A CN103579403A (en) | 2012-08-07 | 2012-08-07 | Silicon-film three-stacking-layer solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210278972.8A CN103579403A (en) | 2012-08-07 | 2012-08-07 | Silicon-film three-stacking-layer solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103579403A true CN103579403A (en) | 2014-02-12 |
Family
ID=50050759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210278972.8A Pending CN103579403A (en) | 2012-08-07 | 2012-08-07 | Silicon-film three-stacking-layer solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103579403A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080230779A1 (en) * | 2000-07-10 | 2008-09-25 | Amit Goyal | [100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices |
| CN101820007A (en) * | 2009-11-18 | 2010-09-01 | 湖南共创光伏科技有限公司 | High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof |
| US20110180128A1 (en) * | 2010-12-21 | 2011-07-28 | Suntae Hwang | Thin film solar cell |
| CN102270691A (en) * | 2011-08-11 | 2011-12-07 | 北京泰富新能源科技有限公司 | Thin-film solar cell |
| CN102386275A (en) * | 2010-09-03 | 2012-03-21 | 应用材料公司 | Procursor for photoelectric conversion module and method of manufacturing same |
| CN102522447A (en) * | 2011-12-22 | 2012-06-27 | 南开大学 | Microcrystalline silicon-germanium thin-film solar cell with absorption layer in band-gap gradient structure |
| CN202797041U (en) * | 2012-08-07 | 2013-03-13 | 江苏武进汉能光伏有限公司 | Silicon film three-laminate solar battery |
-
2012
- 2012-08-07 CN CN201210278972.8A patent/CN103579403A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080230779A1 (en) * | 2000-07-10 | 2008-09-25 | Amit Goyal | [100] Or [110] aligned, semiconductor-based, large-area, flexible, electronic devices |
| CN101820007A (en) * | 2009-11-18 | 2010-09-01 | 湖南共创光伏科技有限公司 | High-conversion rate silicon and thin film compound type multijunction PIN solar cell and manufacturing method thereof |
| CN102386275A (en) * | 2010-09-03 | 2012-03-21 | 应用材料公司 | Procursor for photoelectric conversion module and method of manufacturing same |
| US20110180128A1 (en) * | 2010-12-21 | 2011-07-28 | Suntae Hwang | Thin film solar cell |
| CN102270691A (en) * | 2011-08-11 | 2011-12-07 | 北京泰富新能源科技有限公司 | Thin-film solar cell |
| CN102522447A (en) * | 2011-12-22 | 2012-06-27 | 南开大学 | Microcrystalline silicon-germanium thin-film solar cell with absorption layer in band-gap gradient structure |
| CN202797041U (en) * | 2012-08-07 | 2013-03-13 | 江苏武进汉能光伏有限公司 | Silicon film three-laminate solar battery |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2010062708A3 (en) | Hybrid transparent conductive electrodes | |
| CN102668102A (en) | Polarization resistant solar cell | |
| CN103594529A (en) | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof | |
| KR20080091655A (en) | Photovoltaic device and fabrication method thereof | |
| CN103325879A (en) | High efficient three-lamination-layer heterojunction film solar cell and preparation method thereof | |
| CN202797041U (en) | Silicon film three-laminate solar battery | |
| CN102157596B (en) | Barrier type silicon-based thin film semi-laminated solar cell | |
| CN101800256B (en) | Film system of thin film solar cell, thin film solar cell and method for manufacturing thin film solar cell | |
| CN103579403A (en) | Silicon-film three-stacking-layer solar cell | |
| CN103066153A (en) | Silicon-based thin-film lamination solar cell and manufacturing method thereof | |
| CN103594630B (en) | A kind of silica-based organic photovoltaic cell and preparation method thereof | |
| CN202585452U (en) | Three-in-one type solar cell assembly | |
| CN101794828A (en) | Film system of thin-film solar cell, thin-film solar cell and manufacturing method thereof | |
| WO2012089685A3 (en) | Siox n-layer for microcrystalline pin junction | |
| CN110061086A (en) | A kind of HBC solar battery | |
| CN102097509A (en) | Design of five-layered structure of tandem thin-film amorphous silicon solar cell | |
| CN203434164U (en) | Potential induced degradation (PID)-resistible crystalline silicon solar cell | |
| CN204303823U (en) | Crystalline Silicon PV Module | |
| CN203774376U (en) | Silicon-based organic solar cell | |
| CN202307897U (en) | Novel laminated thin film solar cell | |
| CN202178267U (en) | Combined solar cell module | |
| CN202530677U (en) | Novel solar cell building unit | |
| KR101644056B1 (en) | Solar cell and method for fabricaitng the same | |
| CN202120951U (en) | Copper indium selenium film solar module | |
| CN102956650A (en) | Novel laminated thin-film solar battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140212 |