CN102956650A - Novel laminated thin-film solar battery - Google Patents
Novel laminated thin-film solar battery Download PDFInfo
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- CN102956650A CN102956650A CN201110266140XA CN201110266140A CN102956650A CN 102956650 A CN102956650 A CN 102956650A CN 201110266140X A CN201110266140X A CN 201110266140XA CN 201110266140 A CN201110266140 A CN 201110266140A CN 102956650 A CN102956650 A CN 102956650A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a novel laminated thin-film solar battery. The novel laminated thin-film solar battery comprises a plurality of integrated photoelectric units which are connected with one another in series, wherein each photoelectric unit is formed by a plurality of photoelectric conversion subunits which are connected with one another in parallel; each photoelectric conversion subunit is formed a plurality of sub-batteries which are connected with one another in series; each sub-battery comprises a first conductive electrode, a first photoelectric conversion unit, a second photoelectric conversion unit, a second conductive electrode and a functional thin film; a transparent conductive electrode or an assembly of a transparent conductive electrode and an insulating thin film can be selected as the functional thin film as required; and the number of the upper and lower sub-batteries connected with each parallel circuit in series is determined through the open-circuit voltage ratio of the upper and lower photoelectric conversion units. According to the invention, insulated channels and conductive channels are formed in thin film layers through lineation to realize the circuit connection; and when the insulated channels are formed in conductive electrodes above all the photoelectric conversion units, the insulated channels need to penetrate through a photoelectric conversion layer, therefore a photovoltaic dead zone is prevented and photoelectric current output is improved. According to the invention, the conversion efficiency of the novel laminated thin-film solar battery disclosed by the invention is improved furthest, and thus the superiority of the laminated thin-film solar battery is more outstanding.
Description
Technical field
The present invention relates to a kind of novel laminated film solar cell, especially a kind of overlapping thin film solar battery.
Background technology
Thin-film solar cells occupies a tiny space in area of solar cell owing to having the advantages such as low cost and low light level effect, is comparatively fast being developed in the last few years.Because the single thin film solar cell is owing to the restriction of material and technique itself, its transformation efficiency is lower, and industrial circle has been developed various homotypes or special-shaped overlapping thin film solar battery, has improved electricity conversion.Such as amorphous silicon laminated, amorphous silicon/amorphous germanium silicon lamination, amorphous silicon/microcrystalline silicon tandem, CIGS lamination etc.Spectral response range widened in these laminated construction, improved efficiency of light absorption.Yet, because being equivalent to up and down sub-battery, existing laminated construction directly connects, because electron current does not mate, make the photoelectric current of quite a few become in-fighting, and the raising of lamination solar cell on transformation efficiency is extremely restricted.Although on production technology, usually can notice that all the thickness of controlling each electron current solves matching problem, not reach all the time desirable requirement.
The patent No. is that 200720172723.5 " a kind of lamination solar cell " discloses a kind of technical scheme of attempting to solve this problem as shown in Figure 1, by in the middle of two sub-batteries of lamination opto-electronic conversion, adding the layer of transparent conductive electrode, combine with plated film by groove, make up and down two-layer solar subcells form parallel-connection structure, then each parallel-connection structure is connected again, thereby solves the unmatched problem of electron current.Yet, this solution the matching problem of electric current, but produced the matching problem of voltage, if two sub-battery materials are different up and down for lamination solar cell, its voltage is not identical yet, and this parallel-connection structure must cause the not match penalties Partial Power because of voltage.Do not reach the effect that improves power output.In addition, because part photoelectric conversion layer unit forms the dead band when line, because the horizontal internal resistance of semiconductive thin film is much larger than vertical internal resistance, cause this part dead band photoelectric conversion unit not only to not contribution of power output, and because its internal resistance effect, consume on the contrary the part photogenerated current, cause power output to descend.
Summary of the invention
Goal of the invention: the object of the invention is to solve the voltage and current matching problem of various overlapping thin film solar batteries, reducing to greatest extent the in-fighting of photogenerated current, thereby improve the transformation efficiency that power output improves solar cell.
Technical scheme: some photoelectrons unit is made respectively in the upper and lower of lamination solar cell, and each subelement is by some sub-solar cell series connection, and in the levels, the ratio of the number of sub-solar cell is determined by the minimum ratio of its open circuit voltage.Then each upper strata subelement and lower floor's subelement and be unified into a large photovoltaic element link up the composition output circuit with each photovoltaic element by transparency electrode again.Because this connecting mode has guaranteed that parallel circuits voltage is identical, series circuit current is identical, guarantees that photogenerated current does not have because electric current and voltage do not mate the in-fighting of generation, has therefore increased power output, has improved the transformation efficiency of solar cell.
X
On: Y
Lower=V
Under the oc: V
On the oc(1)
Concrete scheme is as follows:
In the bottom dielectric substrate, set up functional rete between the first conductive electrode, the first photoelectric conversion unit and the second photoelectric conversion unit, the second conductive electrode, the first photoelectric conversion unit and the second photoelectric conversion unit are separated, not directly series connection;
At each layer film conducting channel and insulated trenches are set, make each sub-battery unit form series circuit current identical, the integrated electro unit that parallel circuits voltage is identical.
When first, second photoelectric conversion unit open circuit voltage was identical, functional film was the 3rd transparent conducting electrode film;
The conducting channel that arranges at each conductive electrode and photoelectric conversion unit and the width of insulated trenches be less than 0.1mm, between distance between 0.1mm-0.3mm.
When the second conductive electrode after the 3rd transparent conductive electrode layer after the first photoelectric conversion unit and the second photoelectric conversion unit arranged insulated trenches, insulated trenches need to penetrate photoelectric conversion unit, avoids forming the photovoltaic dead band.
When first, second photoelectric conversion unit open circuit voltage was not identical, functional rete was comprised of the 3rd transparent conductive electrode, intermediate insulating layer, the 4th transparent conductive electrode;
At each layer film conducting channel or insulated trenches are set, make each sub-battery unit form the integrated circuit that series circuit voltage is identical, the parallel circuits electric current is identical.
The conducting channel that arranges at each conductive electrode and photoelectric conversion unit and the width of insulated trenches be less than 0.1mm, between distance between 0.1mm-0.3mm.
When the second conductive electrode after the 3rd transparent conductive electrode layer after the first photoelectric conversion unit and the second photoelectric conversion unit arranged insulated trenches, insulated trenches need to penetrate photoelectric conversion unit, avoids forming the photovoltaic dead band.
The described photoelectric conversion unit of scheme can in the film photoelectric converting units such as amorphous silicon membrane, amorphous carbon silicon thin film, amorphous germanium silicon thin film, monocrystalline silicon thin film, polysilicon membrane, microcrystalline silicon film, Nano thin film, CIS, CIGS, CdTe, amorphous HgCdTe any one or several.
The described conductive electrode of scheme, transparent conductive electrode all can be comprised of among AZO, ITO, the FTO one or several, can two-sided extinction to form, the good thin-film solar cells of light transmission.
The described insulating barrier of scheme can be SiO
2Rete also can be SiN
4Rete, composite film or other thin-film material that meets functional requirement that also can be formed by these two kinds of films.
As a preferred version, described photoelectric conversion unit is comprised of an amorphous silicon PIN knot and a microcrystal silicon NIP knot.Straton battery number is definite by its open circuit voltage ratio up and down for it.
As another preferred version, described photoelectric conversion unit is comprised of an amorphous silicon PIN knot and an amorphous germanium silicon NIP knot, and straton battery number is definite by its open circuit voltage ratio up and down for it.
As another preferred version, described photoelectric conversion unit is comprised of an amorphous silicon PIN knot and an amorphous carbon silicon NIP knot, and interior sub-battery number of lower unit is determined by its open circuit voltage ratio on it.
As another preferred version, described photoelectric conversion unit is comprised of an amorphous silicon PIN and an amorphous silicon NIP knot, because this moment, the photoelectric conversion unit open circuit voltage was identical up and down, photoelectric conversion unit can be directly in parallel up and down, can be by a photoelectricity transparent conductive electrode by solving the problems of the technologies described above such as figure below reticle structure between the levels.Simultaneously, as the photoelectric conversion unit in this special case, its levels can be the identical cadmium telluride PN junction of bandgap structure or CIGS battery PN junction simultaneously.
Simultaneously, its levels photoelectric conversion unit also can be the combination of above-mentioned each photoelectric conversion unit, and particular circuit configurations is determined by the ratio of levels open circuit voltage.
Useful achievement
The present invention utilizes formula 1 to calculate by set up functional thin film layer between first, second converting unit of lamination solar cell, determines the sub-battery number of connecting in the levels.Then utilize laser scribing, conducting channel and insulated trenches are set between levels, make that the sub-battery of some is connected into first identical voltage in the levels, and then and be unified into a larger photoelectric conversion unit, this larger sub-battery unit combination is in series.Avoid like this photoelectricity loss of solar cell, can increase power output, thereby improved the transformation efficiency of solar cell.
Simultaneously, when the upper strata transparent conductive electrode to photoelectric conversion unit carries out groove, photoelectric conversion unit is also carved thoroughly in the lump, avoided like this formation photovoltaic dead band to consume photogenerated current, further improved the transformation efficiency of solar cell.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is done further to specify, advantage above-mentioned and/or other side of the present invention will become apparent
Accompanying drawing 1 is two kinds of equivalent electric circuits of lamination solar cell
Accompanying drawing 3 is that the circuit of levels open circuit voltage when not identical connects
Accompanying drawing 4 is the PIN structure for photoelectric conversion unit, and the levels open circuit voltage is than the lamination solar cell that is 1/2
Embodiment
Some photoelectrons unit is made respectively in the upper and lower of lamination solar cell, and by some sub-solar cell series connection, the ratio of the number of sub-solar cell is determined by the minimum ratio of its open circuit voltage in the levels subelement in each subelement.Then each upper strata subelement and lower floor's subelement and be unified into a large photovoltaic element link up the composition output circuit with each photovoltaic element by transparency electrode again.Because this connecting mode has guaranteed that parallel circuits voltage is identical, series circuit current is identical, guarantees that photogenerated current does not have because electric current and voltage do not mate the in-fighting of generation, has therefore increased power output, has improved the transformation efficiency of solar cell.
X
On: Y
Lower=V
Under the oc: V
On the oc(1)
Its equivalent circuit diagram as shown in Figure 1, figure a be the equivalent electric circuit when up and down open circuit voltage is identical, scheming b is that open circuit voltage ratio is 2: 1 o'clock equivalent electric circuit.When open circuit voltage ratio was other numerical value, 1 and 2 quantity can be determined according to the ratio quantity of open circuit voltage.
The concrete grammar of realizing this technical scheme is to increase two-layer transparent conductive electrode and one deck insulating film layer between two photoelectric conversion units of lamination solar cell, form bottom dielectric substrate, the first conductive electrode, the first photoelectric conversion unit, the 3rd transparent conductive electrode, intermediate insulation rete, the 4th transparent conductive electrode, the second photoelectric conversion unit, the second conducting electrode structure, laser scoring arranges conducting channel and insulated trenches is guaranteed to form such as the described circuit structure of technical scheme by each layer carried out.Open circuit voltage is can be considered as special case at 1: 1 o'clock, only needs to increase the 3rd transparent conductive electrode between first, second photoelectric conversion unit,
When described photoelectric conversion unit is comprised of an amorphous silicon/microcrystal silicon PIN and an amorphous silicon/microcrystal silicon NIP knot, because this moment, the photoelectric conversion unit open circuit voltage was identical up and down, photoelectric conversion unit can be directly in parallel up and down, can be by a photoelectricity transparent conductive electrode by solving the problems of the technologies described above such as figure below reticle structure between the levels.Simultaneously, as the photoelectric conversion unit in this special case, its levels can be the identical cadmium telluride PN junction of bandgap structure or CIGS battery PN junction simultaneously
Be illustrated in fig. 2 shown below, for the film solar battery structure figure of levels open circuit voltage when identical, establish layer of transparent conductive electrode 7 on the substrate 8, establish insulated trenches 701 7 layers of transparent conductive electrodes, channel width is less than 0.1mm.Establish photoelectric conversion unit 6 above 7 layers, wherein the orlop of photoelectric conversion unit will be full of insulated trenches 701 simultaneously.Establish conducting channel 601 at photoelectric conversion unit 6, channel width arranges transparent conductive electrode 5 less than 0.1mm above 6, and transparent conductive electrode will be full of raceway groove 601 simultaneously.Establish insulated trenches 501 at 5 layers, channel width arranges the open circuit voltage photoelectric conversion unit identical with 64 less than 0.1mm on 5, establishes conducting channel 401 at 4 layers simultaneously, and channel width is less than 0.1mm.Establish transparent conductive electrode 34, transparent conductive electrode is full of raceway groove 401 simultaneously, establishes insulated trenches 301 at transparent conductive electrode 3, and channel width is less than 0.1mm, and this insulated trenches penetrates photoelectric conversion layer 4 simultaneously.
In addition, if substrate is sensitive surface, on transparent conductive electrode 3, need establish one deck structure metal electrode identical with 3.If substrate is not sensitive surface, then below transparent conductive electrode 7, establish one deck structure metal guide electrode identical with 7 or direct with structure and 7 identical metal guide electrode replacements 7.
When the levels open circuit voltage was not identical, film solar battery structure was established transparent conductive electrode 9 at substrate 8 as shown in Figure 3, established insulated trenches 901 at 9 layers simultaneously, and channel width is less than 0.1mm.Set layer photoelectric conversion unit 10 at 9 layers, make simultaneously photoelectricity conversion thin film be full of 901, establish conducting channel 1001 at 10 layers, channel width is less than 0.1mm.Establish transparent conductive electrode 11 above 10 layers, establish simultaneously insulated trenches 1101, this insulated trenches runs through photoelectric conversion unit 10, and channel width is less than 0.1mm.Then establish insulating film layer 12 11, establish simultaneously conducting channel 1201, channel width is less than 0.1mm.Make dielectric film be full of raceway groove 1101.Establish transparent conductive electrode 13 12, establish simultaneously insulated trenches 1301, channel width is full of transparent conductive film simultaneously less than 0.1mm in conducting channel 1201.Establish photoelectric conversion unit 14 13, establish simultaneously conducting channel 1401, channel width is full of photoelectricity conversion thin film simultaneously less than 0.1mm in 1301.Establish transparency conducting layer 15 14, establish simultaneously insulated trenches 1501, channel width is less than 0.1mm, and insulated trenches runs through photoelectric conversion unit 14.
In addition, if substrate is sensitive surface, on transparent conductive electrode 3, need establish one deck structure metal electrode identical with 3.If substrate is not sensitive surface, then below transparent conductive electrode 7, establish one deck structure metal guide electrode identical with 7 or direct with structure and 7 identical metal guide electrode replacements 7.
Embodiment one: it is that the upper strata is PIN that the present embodiment discloses a kind of concrete structure, lower floor is the crystalline/micro-crystalline silicon laminated solar cell of NIP, at first establish layer of transparent ITO at the ultra-clear glasses substrate, between ITO, establish width as the insulated trenches of 0.05mm in the laser scoring mode.On ITO, establish successively microcrystal silicon P, I, N layer, make simultaneously P layer microcrystal silicon be full of insulated trenches.Tie at NIP in the laser scoring mode and to establish conducting channel, the spacing of insulated trenches and conducting channel is 0.1mm, and the conducting channel width is 0.05mm.Establish one deck ITO again on the NIP microcrystalline silicon junction, make simultaneously the conductive electrode material be full of conducting channel, establish insulated trenches according to the laser scribing mode at ITO, the spacing of insulated trenches and conducting channel is 0.1mm, and the conducting channel width is 0.05mm.Establish successively N, I, P layer on ITO, form the PIN knot, make simultaneously the N layer material be full of insulated trenches, establish conducting channel in the laser scribing mode between the PIN knot, the spacing of conducting channel and insulated trenches is 0.1mm, and the conducting channel width is 0.05mm.Tie at PIN and to establish ITO and aluminum metal composite conducting layer, and at the composite conducting interpolar insulated trenches is set in the laser scribing mode, the spacing of insulated trenches and lower floor's conducting channel is 0.1mm, and the insulated trenches width is 0.05mm, and insulated trenches penetrates opto-electronic conversion PIN layer.
Embodiment two: it is that the upper strata is that amorphous carbon silicon PIN knot, lower floor are the laminate film structure of microcrystal silicon PIN knot that the present embodiment discloses a kind of concrete structure, and open circuit voltage ratio is 2: 1 lamination solar cell structure up and down, as shown in Figure 4.Establish transparent conductive electrode 16 at ultra-clear glasses substrate 8, between conductive electrode, establish insulated trenches 1601 in the line mode, the insulated trenches width is that 0.02mm. establishes P, I, N rete 17,18,19 successively on transparent conducting electrode film, makes simultaneously the P layer film fill insulated trenches.Establish conducting channel 1901 in the line mode between the NIP microcrystalline silicon film, be spaced apart 0.05mm between conducting channel and insulated trenches, the conducting channel width is 0.02mm.Then at nip layer transparent conductive electrode 20 is set, at the electrically conducting transparent interpolar insulated trenches 2001 is set in the line mode, distance is 0.05mm between insulated trenches and conducting channel, and the insulated trenches width is 0.02mm, and insulated trenches penetrates nip layer simultaneously.Establish SiO at transparent conductive electrode
2Insulating film layer 21 is established conducting channel 2101 in the line mode simultaneously, is spaced apart 0.05mm between conducting channel and insulated trenches, and the conducting channel width is 0.02mm.Insulating film layer is full of 2001 simultaneously.Establish transparent conductive electrode layer 22 at insulating film layer, make transparent conductive electrode fill 2101 conducting channels, establish insulated trenches 2201 in the line mode simultaneously, distance is 0.05mm between insulated trenches and conducting channel, and the insulated trenches width is 0.02mm.Then establish N, I, P amorphous carbon silicon layer 23,24,25 at transparent conductive electrode layer 22, make simultaneously the N layer film fill insulated trenches.Establish conducting channel 2501 in the line mode between PIN amorphous carbon silicon thin film, be spaced apart 0.05mm between conducting channel and insulated trenches, the conducting channel width is 0.02mm.Establish ITO and aluminum metal composite conducting layer 26 at the P layer, and at the composite conducting interpolar insulated trenches 2601 is set in the laser scribing mode, the spacing of insulated trenches and lower floor's conducting channel is 0.1mm, and the insulated trenches width is 0.05mm, and insulated trenches penetrates opto-electronic conversion PIN layer.
The invention provides a kind of thinking and method of novel laminated film solar cell structure; method and the approach of this technical scheme of specific implementation are a lot; the above only is preferred implementation of the present invention; should be understood that; for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.In the present embodiment not clear and definite each part all available prior art realized.
Claims (10)
1. a novel laminated film solar cell comprises the bottom dielectric substrate, the first conductive electrode, the first photoelectric conversion unit, the second photoelectric conversion unit, the second conductive electrode.It is characterized in that,
Between the lamination photoelectric conversion unit, set up functional rete, the first photoelectric conversion unit and the second photoelectric conversion unit are separated, not directly series connection;
At each layer film conducting channel and insulated trenches are set, make first, second photoelectric conversion unit form series circuit current identical, the integrated electro unit that parallel circuits voltage is identical.
The conductive electrode of described each layer use is all transparent conductive electrode, and is good to form light transmission, can two-sidedly be subjected to the structure of light.
2. a kind of novel laminated film solar cell as claimed in claim 1 when first, second photoelectric conversion unit open circuit voltage is identical, is characterized in that, the battery part is as follows
The bottom dielectric substrate, the first conductive electrode, the first photoelectric conversion unit, the 3rd transparent conductive electrode, the second photoelectric conversion unit, the second conductive electrode, wherein the 3rd transparent conductive electrode is the functional rete that separates first, second photoelectric conversion unit;
At each layer film conducting channel or insulated trenches are set, make each sub-cell parallel of levels form the identical sub-battery unit of output current, each sub-battery unit series connection forms output circuit.
3. a kind of novel laminated film solar cell as claimed in claim 2 is characterized in that the width of conducting channel and insulated trenches less than 0.1mm, between distance between 0.1mm-0.3mm.
4. a kind of novel laminated film solar cell as claimed in claim 2, when it is characterized in that conductive electrode layer after photoelectric conversion unit arranges insulated trenches, insulated trenches need to penetrate photoelectric conversion unit, avoids forming the photovoltaic dead band.
5. a kind of novel laminated film solar cell as claimed in claim 1 when first, second photoelectric conversion unit open circuit voltage is not identical, is characterized in that, the battery part is as follows
The bottom dielectric substrate, the first conductive electrode, the first photoelectric conversion unit, the 3rd transparent conductive electrode, intermediate insulating layer, the 4th transparent conductive electrode, the second photoelectric conversion unit, the second conductive electrode, wherein the 3rd transparent conductive electrode, intermediate insulating layer, the 4th transparent conductive electrode are the functional retes that separates the first photoelectric conversion unit and the second photoelectric conversion unit;
At each layer film conducting channel or insulated trenches are set, make the integrated circuit that each layer formation series circuit voltage is identical, the parallel circuits electric current is identical.
6. a kind of novel laminated film solar cell as claimed in claim 5 is characterized in that, the width of conducting channel and insulated trenches is less than 0.1mm, between distance between 0.1mm-0.3mm.
7. a kind of novel laminated film solar cell as claimed in claim 5, when it is characterized in that conductive electrode layer after photoelectric conversion unit arranges insulated trenches, insulated trenches need to penetrate photoelectric conversion unit, avoids forming the photovoltaic dead band.
8. a kind of novel laminated film solar cell as claimed in claim 1, it is characterized in that described photoelectric conversion unit can in the film photoelectric converting units such as amorphous silicon membrane, amorphous carbon silicon thin film, amorphous germanium silicon thin film, monocrystalline silicon thin film, polysilicon membrane, microcrystalline silicon film, Nano thin film, CIS, CIGS, CdTe, amorphous HgCdTe any one or several.
9. a kind of novel laminated film solar cell as claimed in claim 1 is characterized in that described transparent conductive electrode can be comprised of among AZO, ITO, the FTO one or several.
10. a kind of novel laminated film solar cell as claimed in claim 1 is characterized in that described insulating barrier can be SiO
2Rete also can be SiN
4Rete also can be by these two kinds of composite films that film forms
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465845A (en) * | 2013-09-24 | 2015-03-25 | 株式会社东芝 | Multi-junction solar cell |
| CN108899888A (en) * | 2018-08-31 | 2018-11-27 | 汉能移动能源控股集团有限公司 | Solar cell module |
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| US20050166954A1 (en) * | 2003-02-12 | 2005-08-04 | Mitsubishi Denki Kanushi Kaisha | Solar cell panel |
| CN201126823Y (en) * | 2007-10-25 | 2008-10-01 | 李毅 | Laminate solar battery |
| US20080264478A1 (en) * | 2007-02-26 | 2008-10-30 | Lg Electronics Inc. | Thin-film solar cell and method of manufacturing the same |
| CN202307897U (en) * | 2011-08-26 | 2012-07-04 | 刘莹 | Novel laminated thin film solar cell |
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| JPS60160673A (en) * | 1984-01-31 | 1985-08-22 | Sanyo Electric Co Ltd | Photovoltaic device |
| US20050166954A1 (en) * | 2003-02-12 | 2005-08-04 | Mitsubishi Denki Kanushi Kaisha | Solar cell panel |
| US20080264478A1 (en) * | 2007-02-26 | 2008-10-30 | Lg Electronics Inc. | Thin-film solar cell and method of manufacturing the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104465845A (en) * | 2013-09-24 | 2015-03-25 | 株式会社东芝 | Multi-junction solar cell |
| US11398577B2 (en) | 2013-09-24 | 2022-07-26 | Kabushiki Kaisha Toshiba | Multi-junction solar cell |
| CN108899888A (en) * | 2018-08-31 | 2018-11-27 | 汉能移动能源控股集团有限公司 | Solar cell module |
| CN108899888B (en) * | 2018-08-31 | 2019-08-23 | 汉能移动能源控股集团有限公司 | Solar cell module |
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Application publication date: 20130306 |