CN103560176A - Method for manufacturing rear film of solar battery - Google Patents
Method for manufacturing rear film of solar battery Download PDFInfo
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- CN103560176A CN103560176A CN201310566478.6A CN201310566478A CN103560176A CN 103560176 A CN103560176 A CN 103560176A CN 201310566478 A CN201310566478 A CN 201310566478A CN 103560176 A CN103560176 A CN 103560176A
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- front surface
- solar cell
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- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 239000004020 conductor Substances 0.000 claims abstract description 64
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims description 35
- 239000006117 anti-reflective coating Substances 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 17
- 239000002002 slurry Substances 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
- 229910052709 silver Inorganic materials 0.000 description 9
- 239000004332 silver Substances 0.000 description 9
- 238000003466 welding Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 5
- 229910017982 Ag—Si Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a method for manufacturing a rear film of a solar battery. The method comprises the following steps that firstly, a front conductor electrode is manufactured on the surface of a semiconductor substrate after the steps of texture surface making, washing and diffusion; secondly, drying is carried out; thirdly, an antireflection film is manufactured. Compared with an existing traditional solar battery production process, the method enables reflected light on fine grids to be reflected into the solar battery again, and therefore the reflected light is fully absorbed and utilized, the absorption efficiency of sunlight can be improved, and the aims of improving the short-circuit current of the solar battery and improving the efficiency are achieved; the surface color of the solar battery is more unified, and color differences are reduced.
Description
Technical field
The present invention relates to solar cell fabricating technology field, specifically disclose overlay film preparation method after a kind of solar cell.
Background technology
The front surface conductors electrode of tradition crystal silicon solar battery adopts the method for a wire mark at the silver slurry of the certain patterning of surface printing of antireflective coating, thereby the method by sintering penetrates antireflective coating by silver electrode, is connected the object that reaches collected current with diffusion layer.But existing silver electrode has stopped the incident of part sunlight, generally can stop the incident light of 6% left and right, according to the efficiency of existing monocrystalline 19%, if this part of reverberation is all absorbed by solar cell, can improve certificate to efficiency 1.14%.
The IBC of Sunpower (Interdigitated back contact) solar cell reduces the effect of traditional solar cel electrode pattern to the reflex of sunlight by front surface conductors electrode all being moved on to the back side, but this solar cell requires very high to Si wafer quality, and operation is numerous and diverse, cost is higher, is unsuitable for a large amount of production.
Summary of the invention
Object of the present invention is exactly overlay film preparation method after the solar cell providing for the defect of above-mentioned existence, the method can significantly reduce the reflection of sunlight on the thin grid of solar cell front surface conductors electrode, reach and improve solar cell short circuit current, the object of raising the efficiency; And make solar battery surface color homogeneous more, reduced aberration.
After solar cell of the present invention, overlay film preparation method technical scheme is to comprise the following steps:
Step 2, oven dry;
Solar cell front surface conductors electrode be prepared with following three kinds of modes:
Mode one, the preparation of solar cell front surface conductors electrode comprises two step process, first carries out the preparation of the thin grid of front surface conductors electrode, then carries out the preparation of front surface conductors electrode main grid.
Mode two, the preparation of solar cell front surface conductors electrode comprises two step process, first carries out the preparation of front surface conductors electrode main grid, then carries out the preparation of the thin grid of front surface conductors electrode.
Mode three, the preparation of solar cell front surface conductors electrode adopts one-time process to prepare front surface conductors electrode main grid and thin grid;
The preparation method of front surface conductors electrode is silk screen printing or inkjet printing.
The width of the thin grid of front surface conductors electrode is 1-60um, and the width of front surface conductors electrode main grid is 30-2000um.
Preferably, the width of the thin grid of front surface conductors electrode is 20um, and the width of front surface conductors electrode main grid is 1200um.
Antireflective coating is the laminated construction that one deck has the film of anti-reflective effect above.
Preferably, antireflective coating is one deck silicon nitride film, and thickness is 85nm.
Through after step 1 to three, after printing electrode, the non-sensitive surface of solar cell carries out sintering, obtain solar battery sheet.
Main grid and welding in module technique on solar cell weld, and thin grid are because its penetration capacity is not strong, under antireflective coating, thereby can improve the absorptance of solar cell.
After can also punching on the antireflective coating above the main grid of front, weld with welding, and thin grid are because its penetration capacity is not strong, under antireflective coating, thereby can improve the absorptance of solar cell.
Beneficial effect of the present invention is: overlay film preparation method after a kind of solar cell of the present invention, the method is first prepared solar cell front and is prepared after front electrode, carry out again the preparation of antireflective coating, can significantly reduce the reflection of sunlight on the thin grid of solar cell front surface conductors, reach and improve solar cell short circuit current, the object of raising the efficiency; And make solar battery surface color homogeneous more, reduced aberration.Experiment shows, the solar cell that uses the method to make, more than short circuit current improves 0.4A, has fully shown the application prospect of the method.
accompanying drawing explanation:
Figure 1 shows that solar cell front surface conductors electrode of the present invention prepares the structural representation after antireflective coating;
1. Semiconductor substrate in figure, the 3. thin grid of front surface conductors electrode, 4. antireflective coating, 5. front surface conductors electrode main grid.
embodiment:
In order to understand better the present invention, below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail, but the present invention is not limited thereto.
After an overlay film preparation method, comprise the following steps:
Step 2, oven dry: 350 ℃ of temperature, 3.5 minutes time;
After the non-sensitive surface of solar cell prints electrode, carry out sintering, obtain solar battery sheet.
The method front surface conductors electrode main grid 5 adopts different slurries to carry out silk screen printing from the thin grid 3 of front surface conductors electrode, wherein the traditional back silver slurry of the thin grid of front surface conductors electrode 3 use (such as continent 0028D etc.) carries out silk screen printing, be conducive to form Ag-Si alloy after sintering, but the silicon nitride film of this position can not penetrated by silver slurry yet; Front surface conductors electrode main grid 5 adopts traditional slurry front side silver pastes (such as the PV17A of Du Pont etc.), after sintering, not only can penetrate silicon nitride film well welds together with welding in module technique, can also form Ag-Si alloy, and can link together with thin grid 3, reach the effect of collected current.Therefore, the method can be given full play to the best use of of slurry heterogeneity, and reduces costs.
Front surface conductors electrode main grid in module technique on solar cell 5 welds with welding, and the thin grid 3 of front surface conductors electrode are because its penetration capacity is not strong, in antireflective coating 4 times, thereby can improve the absorptance of solar cell.
Experiment shows, the solar cell that uses the method to make, more than short circuit current improves 0.4A, has fully shown the application prospect of the method.
Embodiment 2
After an overlay film preparation method, comprise the following steps:
Step 2, oven dry, temperature is 400 ℃, 2 minutes time;
In module technique, on the antireflective coating 4 above front surface conductors electrode main grid 5, after punching, weld with welding, and the thin grid 3 of front surface conductors electrode are because its penetration capacity is not strong, in antireflective coating 4 times, thereby can improve the absorptance of solar cell.After the non-sensitive surface of solar cell prints electrode, carry out sintering, obtain solar battery sheet.
Experiment shows, the solar cell that uses the method to make, more than short circuit current improves 0.2A, has fully shown the application prospect of the method.
After an overlay film preparation method, comprise the following steps:
Step 2, oven dry, 420 ℃ of temperature, 2 minutes time;
The method front surface conductors electrode main grid 5 adopts different slurries to carry out silk screen printing from the thin grid 3 of front surface conductors electrode, wherein the traditional back silver slurry of the thin grid of front surface conductors electrode 3 use (such as continent 0028D etc.) carries out silk screen printing, be conducive to form Ag-Si alloy, but the silicon nitride film of this position can not penetrated by silver slurry yet; Front surface conductors electrode main grid 5 adopts traditional slurry front side silver pastes (such as the PV17A of Du Pont etc.), not only after sintering, can penetrate silicon nitride film well welds together with welding in module technique, after sintering, can also form Ag-Si alloy, and can link together with thin grid 3, reach the effect of collected current.Therefore, the method can be given full play to the best use of of slurry heterogeneity.
Experiment shows, the solar cell that uses the method to make, more than short circuit current improves 0.4A, has fully shown the application prospect of the method.
Claims (10)
1. an overlay film preparation method after solar cell, comprises the following steps:
Step 1, at the semiconductor substrate surface after making herbs into wool, cleaning, diffusing step, prepare front surface conductors electrode;
Step 2, oven dry;
Step 3, prepare antireflective coating.
2. overlay film preparation method after solar cell according to claim 1, is characterized in that, the preparation of solar cell front surface conductors electrode comprises two step process, first carries out the preparation of the thin grid of front surface conductors electrode, then carries out the preparation of front surface conductors electrode main grid.
3. overlay film preparation method after solar cell according to claim 1, is characterized in that, the preparation of solar cell front surface conductors electrode comprises two step process, first carries out the preparation of front surface conductors electrode main grid, then carries out the preparation of the thin grid of front surface conductors electrode.
4. overlay film preparation method after solar cell according to claim 1, is characterized in that, the preparation of solar cell front surface conductors electrode adopts one-time process to prepare front surface conductors electrode main grid and thin grid.
5. according to overlay film preparation method after the arbitrary described solar cell of claim 1-4, it is characterized in that, the preparation method of front surface conductors electrode is silk screen printing or inkjet printing.
6. overlay film preparation method after solar cell according to claim 5, is characterized in that, the width of the thin grid of front surface conductors electrode is 1-60um, and the width of front surface conductors electrode main grid is 30-2000um.
7. overlay film preparation method after solar cell according to claim 6, is characterized in that, the width of the thin grid of front surface conductors electrode is 20um, and the width of front surface conductors electrode main grid is 1200um.
8. overlay film preparation method after solar cell according to claim 1, is characterized in that, antireflective coating is the laminated construction that one deck has the film of anti-reflective effect above, and the thickness of every layer of antireflective coating is 5-100nm.
9. overlay film preparation method after solar cell according to claim 8, is characterized in that, antireflective coating is one deck silicon nitride film, and thickness is 85nm.
10. overlay film preparation method after solar cell according to claim 1, is characterized in that, through after step 1 to three, after the non-sensitive surface of solar cell prints electrode, carries out sintering, obtains solar battery sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310566478.6A CN103560176A (en) | 2013-11-13 | 2013-11-13 | Method for manufacturing rear film of solar battery |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310566478.6A CN103560176A (en) | 2013-11-13 | 2013-11-13 | Method for manufacturing rear film of solar battery |
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| CN103560176A true CN103560176A (en) | 2014-02-05 |
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| CN201310566478.6A Pending CN103560176A (en) | 2013-11-13 | 2013-11-13 | Method for manufacturing rear film of solar battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405910A (en) * | 2015-11-17 | 2016-03-16 | 新奥光伏能源有限公司 | Heterojunction solar cell, preparation method thereof and solar cell module |
| CN115020525A (en) * | 2022-07-12 | 2022-09-06 | 晶澳（扬州）太阳能科技有限公司 | Back junction solar cell and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2009703A1 (en) * | 2006-04-14 | 2008-12-31 | Sharp Kabushiki Kaisha | Solar cell, solar cell module using the solar cell and method for manufacturing the solar cell module |
| US8211738B2 (en) * | 2008-01-16 | 2012-07-03 | Snu R&Db Foundation | Polycrystalline silicon solar cell having high efficiency and method for fabricating the same |
| US8536447B2 (en) * | 2008-12-17 | 2013-09-17 | Industrial Technology Research Institute | Electrode of solar cell and fabricating method thereof |
| CN103337553A (en) * | 2013-06-04 | 2013-10-02 | 南京日托光伏科技有限公司 | A silicon solar energy battery with a positive electrode coated by a film and a manufacturing technique thereof |
-
2013
- 2013-11-13 CN CN201310566478.6A patent/CN103560176A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2009703A1 (en) * | 2006-04-14 | 2008-12-31 | Sharp Kabushiki Kaisha | Solar cell, solar cell module using the solar cell and method for manufacturing the solar cell module |
| US8211738B2 (en) * | 2008-01-16 | 2012-07-03 | Snu R&Db Foundation | Polycrystalline silicon solar cell having high efficiency and method for fabricating the same |
| US8536447B2 (en) * | 2008-12-17 | 2013-09-17 | Industrial Technology Research Institute | Electrode of solar cell and fabricating method thereof |
| CN103337553A (en) * | 2013-06-04 | 2013-10-02 | 南京日托光伏科技有限公司 | A silicon solar energy battery with a positive electrode coated by a film and a manufacturing technique thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405910A (en) * | 2015-11-17 | 2016-03-16 | 新奥光伏能源有限公司 | Heterojunction solar cell, preparation method thereof and solar cell module |
| CN115020525A (en) * | 2022-07-12 | 2022-09-06 | 晶澳（扬州）太阳能科技有限公司 | Back junction solar cell and preparation method thereof |
| CN115020525B (en) * | 2022-07-12 | 2023-11-07 | 晶澳（扬州）太阳能科技有限公司 | Back junction solar cell and preparation method thereof |
| WO2024011808A1 (en) * | 2022-07-12 | 2024-01-18 | 晶澳（扬州）太阳能科技有限公司 | Back junction solar cell and preparation method therefor |
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Application publication date: 20140205 |