CN103531489A - Method for manufacturing semiconductor device, semiconductor device and pressure bonding device - Google Patents
Method for manufacturing semiconductor device, semiconductor device and pressure bonding device Download PDFInfo
- Publication number
- CN103531489A CN103531489A CN201310282643.5A CN201310282643A CN103531489A CN 103531489 A CN103531489 A CN 103531489A CN 201310282643 A CN201310282643 A CN 201310282643A CN 103531489 A CN103531489 A CN 103531489A
- Authority
- CN
- China
- Prior art keywords
- photopermeability
- reflection layer
- platform
- semiconductor device
- adhesive linkage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 111
- 239000000853 adhesive Substances 0.000 claims description 109
- 230000001070 adhesive effect Effects 0.000 claims description 109
- 239000011521 glass Substances 0.000 claims description 37
- 238000007906 compression Methods 0.000 claims description 30
- 230000006835 compression Effects 0.000 claims description 23
- 230000003287 optical effect Effects 0.000 claims description 8
- 238000005286 illumination Methods 0.000 abstract 3
- 238000001723 curing Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 239000004411 aluminium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000007767 bonding agent Substances 0.000 description 6
- 239000003505 polymerization initiator Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000426 Microplastic Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000011120 plywood Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000001144 postural effect Effects 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000010200 validation analysis Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L21/603—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the application of pressure, e.g. thermo-compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
- H01L24/743—Apparatus for manufacturing layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60277—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving the use of conductive adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Wire Bonding (AREA)
- Die Bonding (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
The invention provides a method for manufacturing a semiconductor device, a semiconductor device, and a pressure bonding device. The method for manufacturing a semiconductor device comprises following successively steps: configuring a semiconductor device through a light solidified bonding layer on a light-transparent substrate placed on a platform; connecting the semiconductor device with the light-transparent substrate by performing pressurization with a pressuring bonding head and performing light illumination with a light illumination device. In the connecting process, a light reflecting layer is disposed on a position closer to the platform than a binding layer. The light from the light illumination device is reflected and irradiates the bonding layer. Therefore, the bonding layer is solidified.
Description
Technical field
The present invention relates to manufacture method, semiconductor device and the compression bonding apparatus of semiconductor device.
Background technology
In recent years, along with miniaturization, slimming, the high-precision refinement of the electronic units such as semiconductor integrated circuit, display, as for the connecting material of connecting electronic parts and Circuits System to high-density, anisotropic conductive adhesive receives publicity.In former anisotropic conductive adhesive, often having used the hot curing of hot potentiality polymerization initiator and epoxy resin, (methyl) acrylic monomers is bonding agent, but worry thermal conductance owing to connecting cause connected body deteriorated, be out of shape.On the other hand, in the situation that making with light potentiality polymerization initiator, when adding thermo-compressed, by carrying out irradiation, can carry out the connection under lower temperature, and be studied.
In the manufacture method of the semiconductor device of the anisotropic conductive adhesive that contains light potentiality polymerization initiator in use, for example, by the photocuring of the conducting particles that is dispersed with metallic, plastic pellet enforcement metal-plated is formed, be that bonding agent is used as anisotropic conductive adhesive.Then, between semiconductor element and substrate, clamp this anisotropic conductive adhesive, by polishing head pressurize on one side carry out irradiation (for example, with reference to Japanese Patent Publication 5-41091 communique, Japanese kokai publication sho 62-283581 communique) on one side.Thus, the conducting particles after pressurization becomes electrical connection medium, by simple method, can complete the electrical connection between a plurality of circuit simultaneously.In addition, by the anisotropic conductive of bonding agent, make to obtain low resistance connectivity between connecting circuit, in abutting connection with between circuit, obtaining high-insulativity.
Summary of the invention
In addition, state in the use in the situation of the anisotropic conductive adhesive that contains like that light potentiality polymerization initiator, Yi Bian by polishing head, carry out the pressurization of semiconductor element and substrate, Yi Bian from the surrounding of semiconductor element and substrate, carry out irradiation.Yet, only from around while carrying out irradiation, insufficient to the irradiation of adhesive linkage, adhesive linkage curing insufficient, result probably cannot obtain the connectivity of semiconductor element and substrate.
To this, in the method for attachment of the semiconductor element of above-mentioned Japanese Patent Publication 5-41091 communique, Japanese kokai publication sho 62-283581 communique, record following method: the platform internal configurations light irradiation device placing semiconductor element and substrate, irradiates light from the rear side of substrate to adhesive linkage.In such method, think and can fully obtain the irradiation amount to adhesive linkage, but due to the structure complicated of platform, therefore exist the improvement cost of compression bonding apparatus to improve such problem.
The present invention is the invention of making in order to solve above-mentioned problem, and object is to provide and can makes photo-curable adhesive linkage solidify fully manufacture method, semiconductor device and the compression bonding apparatus of the good internuncial semiconductor device that obtains semiconductor element and substrate by simple method.
In order to solve above-mentioned problem, the manufacture method of the semiconductor device of an aspect of of the present present invention is characterised in that, it is the manufacture method with the semiconductor device of following connection operation, this connection operation is: across photo-curable adhesive linkage, be positioned over configuring semiconductor element on the photopermeability substrate on platform, by utilizing the pressurization that crimp head carries out and utilizing the irradiation that light irradiation device carries out that semiconductor element is connected on photopermeability substrate, in connecting operation, in the position of comparing more close platform with adhesive linkage, reflection layer is set, by reflection layer, make to be radiated on adhesive linkage from the light reflection of light irradiation device, thereby adhesive linkage is solidified.
In the manufacture method of this semiconductor device, by comparing the reflection layer of the position configuration of more close platform with adhesive linkage, can irradiate the light from light irradiation device from the bottom surface side of adhesive linkage.Therefore, and only from the surrounding of adhesive linkage, carry out light-struck situation and compare, can irradiate the fully light of amount to adhesive linkage, can access the good connectivity of semiconductor element and photopermeability substrate.In addition, this method just can realize by the simple structure of reflection layer is just set in the position of comparing more close platform with adhesive linkage, therefore can also avoid the improvement cost of compression bonding apparatus to improve.
In addition, can between adhesive linkage and platform, reflection layer be set.In this case, the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, photopermeability substrate can be the glass substrate below thickness 1mm, can between glass substrate and platform, further configure photopermeability member, can between glass substrate and platform, reflection layer be set.In this case, even in the situation that glass substrate is thin, also the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, in photopermeability member, can on the face towards glass substrate side, reflection layer be set.In such formation, also the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, in photopermeability member, can on the face of object platform side, reflection layer be set.In such formation, also the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, can reflection layer be set in the inside of photopermeability member.In such formation, also the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, in the inside of photopermeability member, can reflection layer be set to bend to the state of platform side protrusion.In this case, can make the reflection of light angle on reflection layer become large, thereby the light from light irradiation device can be irradiated more fully to adhesive linkage.
In addition, can be formed by photopermeability member the surface element of platform, can between photopermeability substrate and the base portion of platform, reflection layer be set.In this case, also the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, on one side can swing light irradiation device with respect to reflection layer on one side, carry out irradiation.Like this, can realize the homogenizing of the light that adhesive linkage is irradiated.
In addition, can be at the surperficial lower side configuration light irradiation device of platform.Because the surrounding of crimp head is easily complicated region of apparatus structure, therefore, by the surperficial lower side configuration light irradiation device at platform, can guarantee the crimp head configuration degree of freedom of device around.In addition, the optical axis of light irradiation device can configure obliquely with respect to the upper surface of platform.In addition, the terminal of semiconductor element can be connected with the wired electric of photopermeability substrate.
In addition, the semiconductor device of an aspect of of the present present invention is characterised in that, uses the manufacture method of above-mentioned semiconductor device and manufactures.
In this semiconductor device, with sufficient bonding strength, connect semiconductor element and photopermeability substrate.Therefore, can obtain the semiconductor device that has suppressed fully contact resistance for a long time.
In addition, the compression bonding apparatus of an aspect of of the present present invention is characterised in that to have: the platform of placing the photopermeability substrate being connected with semiconductor element across photo-curable adhesive linkage; The crimp head of pressurizeing to being positioned over photopermeability substrate on platform and semiconductor element; Light irradiation device in surrounding's configuration of the put area of photopermeability substrate; And comparing reflection layer position setting, by the light from light irradiation device towards adhesive linkage reflection of more close platform with adhesive linkage.
In this compression bonding apparatus, by the reflection layer compare the position configuration of more close platform with adhesive linkage, can irradiate the light from light irradiation device from the bottom surface side of adhesive linkage.Therefore, and only from the surrounding of adhesive linkage, carry out light-struck situation and compare, can irradiate the fully light of amount to adhesive linkage, can access the good connectivity of semiconductor element and photopermeability substrate.In addition, this compression bonding apparatus just can be realized by the simple structure of reflection layer is only set in the position of comparing more close platform with adhesive linkage, therefore, can also avoid the improvement cost of device to improve.
In addition, can between adhesive linkage and described platform, above-mentioned reflection layer be set.In this case, the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, photopermeability substrate can be the glass substrate below thickness 1mm, can between glass substrate and platform, further configure photopermeability member, can between glass substrate and platform, reflection layer be set.In this case, even in the situation that glass substrate is thin, also the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, in photopermeability member, can on the face towards glass substrate side, reflection layer be set.In such formation, also the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, in photopermeability member, can on the face of object platform side, reflection layer be set.In such formation, also the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, can reflection layer be set in the inside of photopermeability member.In such formation, also the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, in the inside of photopermeability member, can reflection layer be set to bend to the state of platform side protrusion.In this case, can make the reflection of light angle on reflection layer become large, the light from light irradiation device can be irradiated more fully to adhesive linkage.
In addition, can be formed by photopermeability member the surface element of platform, can between photopermeability substrate and the base portion of platform, reflection layer be set.In this case, also the light from light irradiation device can be irradiated fully to adhesive linkage.
In addition, light irradiation device can swing with respect to reflection layer.Like this, can realize the homogenizing of the light that adhesive linkage is irradiated.
In addition, can be at the surperficial lower side configuration light irradiation device of platform.Because the surrounding of crimp head is easily complicated region of apparatus structure, therefore, by light irradiation device being configured in to the surperficial lower side of platform, can guarantee the crimp head configuration degree of freedom of device around.In addition, the optical axis of light irradiation device can configure obliquely with respect to the upper surface of platform.In addition, the terminal of semiconductor element can be connected with the wired electric of photopermeability substrate.
According to the present invention, can make photo-curable adhesive linkage fully curing by simple method, can access the good connectivity of semiconductor element and substrate.
Accompanying drawing explanation
Fig. 1 means the schematic diagram of manufacture method of the semiconductor device of an execution mode.
Fig. 2 means the schematic diagram of the variation of reflection layer.
Fig. 3 means the schematic diagram of other variation of reflection layer.
Fig. 4 means the schematic diagram of further other variation of reflection layer.
Fig. 5 means the schematic diagram of manufacture method of the semiconductor device of variation.
Fig. 6 means the schematic diagram of manufacture method of the semiconductor device of other variation.
Fig. 7 means the further schematic diagram of the manufacture method of the semiconductor device of other variation.
Symbol description
1: thermo-compression bonding device (compression bonding apparatus), 2: platform, 2a: surface element, 2b: base portion, 3: thermocompression head (crimp head), 11: semiconductor element, 12: adhesive linkage, 13: photopermeability substrate, 14: semiconductor device, 15: photopermeability member, 16: reflection layer.
Embodiment
Below, Yi Bian with reference to accompanying drawing, Yi Bian the execution mode of the manufacture method of semiconductor device, semiconductor device and compression bonding apparatus is elaborated.
Fig. 1 means the schematic diagram of manufacture method of the semiconductor device of an execution mode.As shown in Figure 1, the manufacture method of this semiconductor device has following connection operation: across photo-curable adhesive linkage 12, be positioned over configuring semiconductor element 11 on the photopermeability substrate 13 on platform 2, by utilizing the heating pressurization that thermocompression head (crimp head) 3 carries out and the irradiation that utilizes light irradiation device 4 to carry out that semiconductor element 11 is connected on photopermeability substrate 13.Such connection operation realizes by the thermo-compression bonding device (compression bonding apparatus) 1 that comprises platform 2, thermocompression head 3, light irradiation device 4 and form.
In addition, the semiconductor device 14 that manufacture method by this semiconductor device is made is so long as be connected electrically in by semiconductor element 11 device forming on photopermeability substrate 13 and be just not particularly limited, and for example also comprises liquid crystal display, OLED display like that only at the such device of the end of photopermeability substrate 13 configuring semiconductor element 11.
When adhesive linkage 12 solidifies, can use guiding from the photopermeability member 15 of the light of light irradiation device 4.Photopermeability member 15, is configured on platform 2 by the tabular component forming with the same material of above-mentioned photopermeability substrate 13 for for example.The thickness of photopermeability member 15 preferably has sufficient thickness with respect to the thickness of photopermeability substrate 13, is specifically 1mm～10mm left and right.In addition, the flat shape of photopermeability member 15, the viewpoint of the postural stability of semiconductor element 11 and photopermeability substrate 13 is considered when guaranteeing thermo-compressed, preferably equal with the flat shape of photopermeability substrate 13.Photopermeability member 15 can be fixed on platform 2, also can not fix but is positioned on platform 2.
On this photopermeability member 15, be formed with the reflection layer 16 making from the light reflection of light irradiation device 4.The reflection layer 16 of present embodiment is by the bottom surface of photopermeability member 15, in whole scope of the face of object platform 2 sides, forms.Reflection layer 16 preferences as the specular reflectivity of the light with respect to 360nm wavelength be more than 50%.As the material that forms such reflection layer 16, can enumerate such as aluminium, copper, beryllium, silver, gold, titanium, iron or comprise a kind of alloy in these metals etc.In addition, above-mentioned specular reflectivity can be measured by the policy that for example JIS Z8741-1997 records.
In order to improve the reflectivity of reflection layer 16, can on metallic surface, by electrolytic polishing, chemical grinding, implement gloss and process.In addition, also can by processing such as pellumina processing, make metal surface roughening in contrast to this.In this case, in the reverberation from reflection layer 16, comprise a lot of scattering compositions.
As reflection layer 16, can use and play the multilayer film that strengthens light action.As such multilayer film, can enumerate such as the alternately laminated Mo/Si multilayer film that has molybdenum layer and a silicon layer or alternately laminated Mo/Be multilayer film that has molybdenum layer and beryllium layer etc.
In the situation that the optical axis of light irradiation device 4 is fixing with respect to the angle θ of platform 2, preferably according to the distance between adhesive linkage 12 and reflection layer 16, decide angle θ.For example, in distance, be 1mm following in the situation that, θ is preferably below 35 °, and apart from being 3mm following in the situation that, θ is preferably below 50 °.In addition, in distance, be 10mm following in the situation that, θ is preferably below 80 °.In addition, by pendulous device (not shown), support light irradiation device 4, can in irradiation, make the angle θ of optical axis and platform upper surface with the cyclical swing of regulation.In addition, in the present embodiment, show the mode of using a light irradiation device 4, but also can use a plurality of light irradiation devices 4.
In the manufacture method of semiconductor device of using thermo-compression bonding device 1 as above, by comparing the reflection layer 16 of the position configuration of more close platform 2 with adhesive linkage 12, can irradiate the light from light irradiation device 4 from the bottom surface side of adhesive linkage 12.Therefore, and only from the surrounding of adhesive linkage 12, carry out light-struck situation and compare, can irradiate the fully light of amount to adhesive linkage 12, can access the good connectivity of semiconductor element 11 and photopermeability substrate 13.In addition, by the simple structure of reflection layer 16 is only set in the position of comparing more close platform 2 with adhesive linkage 12, just can realize, therefore, can also avoid the improvement cost of thermo-compression bonding device 1 to improve.
In addition, in the manufacture method of this semiconductor device, the bottom surface side of the photopermeability substrate 13 below thickness 1mm further configuration, with respect to the abundant thick photopermeability member 15 of photopermeability substrate 13, is provided with reflection layer 16 at the bottom surface side of this photopermeability member 15.Therefore,, even the thin glass substrate of photopermeability substrate 13 also can be guaranteed by photopermeability member 15 the arrival distance of the relative adhesive linkage 12 of light, can irradiate fully the light from light irradiation device 4 to the bottom surface integral body of adhesive linkage 12.Swing light irradiation device 4 with respect to reflection layer 16 in the situation that, can realize the homogenizing of the light that adhesive linkage 12 is irradiated, the connectivity of semiconductor element 11 and photopermeability substrate 13 is better.
In addition, in the semiconductor device 14 obtaining in the manufacture method of using this semiconductor device, with sufficient bonding strength, connect semiconductor element 11 and photopermeability substrate 13.Consequently can access the semiconductor device 14 that has fully suppressed contact resistance for a long time.
In the above-described embodiment, at the bottom surface side of photopermeability member 15, form reflection layer 16, but also can be as shown in Figure 2, in the upper surface side of photopermeability member 15, form reflection layer 16, can also as shown in Figure 3, in the inside of photopermeability member 15, form reflection layer 16.In addition, as shown in Figure 2, in the situation that the upper surface side of photopermeability member 15 forms reflection layer 16, can form reflection layer 16 in the upper surface side without the member of photopermeability.
In the situation that the inside of photopermeability member 15 forms reflection layer 16, as shown in Figure 4, can reflection layer 16 be set to bend to the state of platform 2 sides protrusions.In this case, can make the reflection of light angle on reflection layer 16 become large, can irradiate more fully the light from light irradiation device 4 to the bottom surface integral body of adhesive linkage 12.In addition, the member that reflection layer 16 and photopermeability member 15 can be integrated, can be also member independently separately.
In addition, Fig. 5 means the schematic diagram of manufacture method of the semiconductor device of variation.The manufacture method of the semiconductor device shown in this figure, is not being used photopermeability member 15 but is directly being provided with in reflection layer 16 this point different from the embodiment described above at the bottom surface side of photopermeability substrate 13.In this case, the member that reflection layer 16 and photopermeability substrate 13 can be integrated, can be also member independently separately.
In the manufacture method of this semiconductor device, by comparing the reflection layer 16 of the position configuration of more close platform 2 with adhesive linkage 12, also can irradiate the light from light irradiation device 4 from the bottom surface side of adhesive linkage 12.Therefore, and only from the surrounding of adhesive linkage 12, carry out light-struck situation and compare, can irradiate the fully light of amount to adhesive linkage 12, can access the good connectivity of semiconductor element 11 and photopermeability substrate 13.In addition, by the simple structure of reflection layer 16 is only set in the position of comparing more close platform 2 with adhesive linkage 12, just can realize, therefore, can also avoid the improvement cost of thermo-compression bonding device 1 to improve.
In addition, Fig. 6 means the schematic diagram of manufacture method of the semiconductor device of other variation.The manufacture method of the semiconductor device shown in this figure is provided with in photopermeability member 15 this point different from the embodiment described above on platform 2.
That is,, in the manufacture method of this semiconductor device, by formed the surface element 2a of platform 2 by photopermeability member 15, at the bottom surface side of surface element 2a, reflection layer 16 is set, thereby configures reflection layer between photopermeability substrate 13 and the base portion 2b of platform 2.
In the manufacture method of this semiconductor device, by comparing the reflection layer 16 of the position configuration of more close platform 2 with adhesive linkage 12, can irradiate the light from light irradiation device 4 from the bottom surface side of adhesive linkage 12.Therefore, and only from the surrounding of adhesive linkage 12, carry out light-struck situation and compare, can irradiate the fully light of amount to adhesive linkage 12, can access the good connectivity of semiconductor element 11 and photopermeability substrate 13.In addition, by the simple structure of reflection layer 16 is only set in the position of comparing more close platform 2 with adhesive linkage 12, just can realize, therefore, can also avoid the improvement cost of thermo-compression bonding device 1 to improve.
In addition, Fig. 7 means the further schematic diagram of the manufacture method of the semiconductor device of other variation.The manufacture method of the semiconductor device shown in this figure be not different from the embodiment described above the light this point from light irradiation device 4 from the upper side of platform 2 but from the lower side incident of platform 2.The method is applicable to for example in the upper surface side of photopermeability substrate 13, be formed with the situation of the electrode pattern being formed by aluminum series alloy.
More particularly, in the manufacture method of this semiconductor device, with respect to photopermeability substrate 13, reduce fully the size of platform 2, and at the upper surface of platform 2, reflection layer 16 is set.In addition, the lower side at the upper surface of platform 2, configures respectively light irradiation device 4 in the both sides of platform 2.
In the manufacture method of this semiconductor device, can from the bottom surface side of adhesive linkage 12, irradiate the light from light irradiation device 4 by photopermeability substrate 13.In addition, the electrode pattern forming by the upper surface side at photopermeability substrate 13, a part of light that the semiconductor element back side (face that is connected side with adhesive linkage) reflexes to platform 2 sides, by reflection layer 16 reflections of platform 2 upper surfaces, can be guaranteed the arrival distance of the relative adhesive linkage 12 of light.Therefore, and only from the surrounding of adhesive linkage 12, carry out light-struck situation and compare, can irradiate the fully light of amount to adhesive linkage 12, can access the good connectivity of semiconductor element 11 and photopermeability substrate 13.In addition, by the simple structure of reflection layer 16 is only set in the position of comparing more close platform 2 with adhesive linkage 12, just can realize, therefore, can also avoid the improvement cost of thermo-compression bonding device 1 to improve.
Further, in the manufacture method of this semiconductor device, light irradiation device 4 is configured in to the lower side of the upper surface of platform 2.Because the surrounding of thermocompression head 3 is easily complicated region of apparatus structure, therefore, by light irradiation device 4 being configured in to the lower side of the upper surface of platform 2, can guarantee the thermocompression head 3 configuration degree of freedom of device around.
Below, embodiment is described.
[anisotropic conductive adhesive]
As in the anisotropic conductive adhesive of adhesive linkage, (Dongdu changes into system to use phenoxy resin, trade name: PKHC, 40 quality % toluene solutions), (Dongdu changes into system to bisphenol A type epoxy resin, trade name: YD-127), light curing agent (ADEKA, trade name: SP-170), additive (eastern beautiful DOW CORNING organosilicon system, trade name: SH6040) and conducting particles (ponding chemistry system, trade name: AU-203A).Then, after they being mixed with the ratio of mass ratio 40:55:5:5:30, use blade coating machine to be coated on the PET resin molding of thickness 40 μ m, by the heated-air drying of 70 ℃, 5 minutes, obtaining thickness was the membranaceous adhesive linkage of 20 μ m.
[reflection layer]
As reflection layer, make reflection layer A～C below.In reflection layer A, in the aluminium level crossing TFA-40S06-1(of 40mm * 40mm, thickness 6mm Sigma ray machine Co., Ltd. system) with the face of aluminium reflector side opposition side on, use bonding agent HIGH SUPER5(CEMEDINE Co., Ltd. system), the Pai Lesi glass healthy and free from worry processed (pyrex glass) of stacked 40mm * 40mm, thickness 1mm.
In reflection layer B, on the face of the aluminium reflector of aluminium level crossing TFA-40S06-1 side, use bonding agent HIGH SUPER5(CEMEDINE Co., Ltd. system), the Pai Lesi glass healthy and free from worry processed of stacked 40mm * 40mm, thickness 1mm.
In reflection layer C, on the face of the aluminium reflector of aluminium level crossing TFA-40S06-1 side, use bonding agent HIGH SUPER5(CEMEDINE Co., Ltd. system), the Pai Lesi glass healthy and free from worry processed of stacked 40mm * 40mm, thickness 6mm.Then, in flip-chip bond machine FCB-3(MAT system) platform on configure respectively each reflection layer.
[light irradiation device]
As light irradiation device, use high-pressure mercury-vapor lamp SPOTCURE SP-7(oxtail Electric Co., Ltd system).In flip-chip bond machine FCB-3(MAT system) platform on configure this device, the optical axis of light exit side of optical fiber of take is that with respect to reflection layer the mode of the incidence angle θ of regulation keeps this device.In addition, the light irradiation device side of the bottom surface of photopermeability substrate on one side near the measuring point of exposure of configuration light irradiation device.The light exit side of light irradiation device and the distance of measuring point are about 4cm.
[connection of semiconductor element]
(embodiment)
With 2mm * 20mm size, from PET resin molding, the membranaceous adhesive linkage obtaining by above-mentioned method for making is transferred in to the substrate of glass substrate (healthy and free from worry #1737, profile 38mm * 28mm, thickness 0.5mm, surface have ITO(tin indium oxide) Wiring pattern (the wide 50 μ m of pattern, spacing 50 μ m)).Then, on reflection layer on platform, configure this glass substrate, while expose, pass through flip-chip bond machine FCB-3(MAT system) heat to pressurize IC chip (the size 50 μ m * 50 μ m of profile 1.7mm * 17.2mm, thickness 0.55mm, projection, the spacing 50 μ m of projection) is installed.From the bottom surface of adhesive linkage, to the distance of the upper surface of reflection layer, the in the situation that of reflection layer A, be 0.5mm, be 1.5mm in the situation that of reflection layer B, the in the situation that of reflection layer C, is 6.5mm., distance, the exposure between the kind of reflection layer, adhesive linkage and reflection layer, be connected temperature, time and pressure, as shown in table 1 about the incidence angle θ of light of embodiment 1～12.In addition, add thermo-compressed implements with exposure simultaneously.
(comparative example)
In comparative example 1, on the reflection layer on platform, glass substrate similarly to Example 2 of configuration, does not carry out the exposure of adhesive linkage, in addition, implements being connected of semiconductor element and glass substrate under same condition.In addition, in comparative example 2, do not clip be laminated with Pai Lesi glass aluminium level crossing and on platform glass substrate similarly to Example 2 of configuration, in addition, under condition similarly to Example 2, implement being connected of semiconductor element and glass substrate.
[effect validation test]
From the embodiment 1～12 that connects and the connector of comparative example 1,2, remove semiconductor element under condition as shown in table 1, collect the adhesive linkage exposing.Then, by infrared absorption spectrum, the area of the signal strength signal intensity of the epoxy radicals based on before connecting be connected after the ratio of area of signal strength signal intensity of epoxy radicals calculated the curing degree of adhesive linkage.In addition, about the connector of semiconductor element and glass substrate, use weld strength tester (Bond Tester) (Dage company system) to measure the shear bond strength after firm connection.Further, about the connector of semiconductor element and glass substrate, measured in abutting connection with the resistance value between circuit (maximums in whole 14 terminals).After 85 ℃ of temperature, humidity 85%, the humidity test of 100 hours, also again implemented the mensuration of this resistance value.
Table 2 means the table of its result of the test.As the table shows, do not carry out solidifying of adhesive linkage in comparative example 1, be solidifying of 15% left and right in comparative example 2, on the other hand, compares observe fully solidifying of adhesive linkage in embodiment 1～12 with comparative example.In having used the embodiment 1～4 of reflection layer A, by reducing the incidence angle θ of light, the tendency that has curing degree to improve, but in having used the embodiment 5～12 of reflection layer B, C, almost have no the interdependence to incidence angle θ, except embodiment 5, be 96%～98% high curing degree.
From above result, can confirm, by reflection layer, can promote solidifying of adhesive linkage.Can confirm in addition, by the distance of adhesive linkage and reflection layer is set fully, can make solidifying further really of adhesive linkage.In addition, roughly proportional with the curing degree of adhesive linkage in adhesive strength, and curing degree is in 90% embodiment 4,6～12, can realize high-adhesive-strength more than 40N/m.
About contact resistance, in comparative example 1,2, resistance value raises and surpasses measurement range, between semiconductor element and glass substrate, is electrically connected to.On the other hand, although in a part of embodiment, it is large that contact resistance becomes, and at curing degree, surpasses in 90% embodiment 4,6～12, can confirm and implement also can to maintain the low contact resistance that is less than 5 Ω after humidity test.
Table 1
Table 2
Claims (25)
1. the manufacture method of a semiconductor device, it is characterized in that, it is the manufacture method with the semiconductor device of following connection operation, described connection operation is: on the photopermeability substrate being positioned on platform across photo-curable adhesive linkage configuring semiconductor element, by utilizing the pressurization that crimp head carries out and utilizing the irradiation that light irradiation device carries out that described semiconductor element is connected on described photopermeability substrate
In described connection operation, in the position of comparing more close described platform with described adhesive linkage, reflection layer is set, by described reflection layer, make to be radiated on described adhesive linkage from the light reflection of described light irradiation device, thereby described adhesive linkage is solidified.
2. the manufacture method of semiconductor device according to claim 1, is characterized in that, between described adhesive linkage and described platform, described reflection layer is set.
3. the manufacture method of semiconductor device according to claim 1 and 2, is characterized in that, described photopermeability substrate is the glass substrate below thickness 1mm,
Between described glass substrate and described platform, further configure photopermeability member,
Between described glass substrate and described platform, described reflection layer is set.
4. the manufacture method of semiconductor device according to claim 3, is characterized in that, in described photopermeability member, described reflection layer is set on the face towards described glass substrate side.
5. the manufacture method of semiconductor device according to claim 3, is characterized in that, in described photopermeability member, described reflection layer is set on the face towards described platform side.
6. the manufacture method of semiconductor device according to claim 3, is characterized in that, in the inside of described photopermeability member, described reflection layer is set.
7. the manufacture method of semiconductor device according to claim 6, is characterized in that, in the inside of described photopermeability member, to bend to the state of described platform side protrusion, described reflection layer is set.
8. the manufacture method of semiconductor device according to claim 1, is characterized in that, is formed the surface element of described platform by photopermeability member, between described photopermeability substrate and the base portion of described platform, described reflection layer is set.
9. according to the manufacture method of the semiconductor device described in any one in claim 1～8, it is characterized in that, with respect to described reflection layer swing described light irradiation device and on one side carry out irradiation on one side.
10. according to the manufacture method of the semiconductor device described in any one in claim 1～9, it is characterized in that, in the surperficial lower side of described platform, configure described light irradiation device.
11. according to the manufacture method of the semiconductor device described in any one in claim 1～10, and the optical axis of described light irradiation device configures obliquely with respect to the upper surface of described platform.
12. according to the manufacture method of the semiconductor device described in any one in claim 1～11, and the terminal of described semiconductor element is connected with the wired electric of described photopermeability substrate.
13. 1 kinds of semiconductor devices, right to use requires the manufacture method of the semiconductor device described in any one in 1～12 and manufactures.
14. 1 kinds of compression bonding apparatus, is characterized in that having:
The platform of the photopermeability substrate that placement is connected with semiconductor element across photo-curable adhesive linkage;
The crimp head of pressurizeing to being positioned over described photopermeability substrate on described platform and described semiconductor element;
Light irradiation device in surrounding's configuration of the put area of described photopermeability substrate; And
In the position of comparing more close described platform with described adhesive linkage, arrange, make the reflection layer towards described adhesive linkage reflection from the light of described light irradiation device.
15. compression bonding apparatus according to claim 14, is characterized in that, between described adhesive linkage and described platform, are provided with described reflection layer.
16. according to the compression bonding apparatus described in claims 14 or 15, it is characterized in that, described photopermeability substrate is the glass substrate below thickness 1mm,
Between described glass substrate and described platform, further configure photopermeability member,
Between described glass substrate and described platform, be provided with described reflection layer.
17. compression bonding apparatus according to claim 16, is characterized in that, in described photopermeability member, are provided with described reflection layer on the face towards described glass substrate side.
18. compression bonding apparatus according to claim 16, is characterized in that, in described photopermeability member, are provided with described reflection layer on the face towards described platform side.
19. compression bonding apparatus according to claim 16, is characterized in that, in the inside of described photopermeability member, are provided with described reflection layer.
20. compression bonding apparatus according to claim 19, is characterized in that, in the inside of described photopermeability member, to bend to the state of described platform side protrusion, are provided with described reflection layer.
21. compression bonding apparatus according to claim 14, is characterized in that, are formed the surface element of described platform by photopermeability member, between described photopermeability substrate and the base portion of described platform, are provided with described reflection layer.
22. according to the compression bonding apparatus described in any one in claim 14～21, it is characterized in that, described light irradiation device can swing with respect to described reflection layer.
23. according to the compression bonding apparatus described in any one in claim 14～22, it is characterized in that, in the surperficial lower side of described platform, disposes described light irradiation device.
24. according to the compression bonding apparatus described in any one in claim 14～23, and the optical axis of described light irradiation device configures obliquely with respect to the upper surface of described platform.
25. according to the compression bonding apparatus described in any one in claim 14～24, and the terminal of described semiconductor element is connected with the wired electric of described photopermeability substrate.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012152667 | 2012-07-06 | ||
| JP2012-152667 | 2012-07-06 | ||
| JP2012-159767 | 2012-07-18 | ||
| JP2012159767 | 2012-07-18 | ||
| JP2012-236912 | 2012-10-26 | ||
| JP2012236912 | 2012-10-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103531489A true CN103531489A (en) | 2014-01-22 |
Family
ID=49814960
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310282643.5A Pending CN103531489A (en) | 2012-07-06 | 2013-07-05 | Method for manufacturing semiconductor device, semiconductor device and pressure bonding device |
| CN201320401223XU Expired - Lifetime CN203367239U (en) | 2012-07-06 | 2013-07-05 | Pressure connection device |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320401223XU Expired - Lifetime CN203367239U (en) | 2012-07-06 | 2013-07-05 | Pressure connection device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2014103378A (en) |
| KR (1) | KR20140005797A (en) |
| CN (2) | CN103531489A (en) |
| TW (1) | TW201411747A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105388641A (en) * | 2014-08-20 | 2016-03-09 | 松下知识产权经营株式会社 | Component crimping apparatus |
| CN111656505A (en) * | 2018-01-25 | 2020-09-11 | 库利克和索夫工业公司 | Bonding tool for a bonding machine, bonding machine for bonding semiconductor elements and associated method |
| CN116110805A (en) * | 2023-04-13 | 2023-05-12 | 深圳宏芯宇电子股份有限公司 | Chip bonding method, structure and memory |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6145647B2 (en) * | 2013-09-26 | 2017-06-14 | パナソニックＩｐマネジメント株式会社 | Component mounting apparatus and component mounting method |
| KR20220064835A (en) | 2020-11-12 | 2022-05-19 | 정한철 | Prominence and depression Cup Noodles Lid |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62252946A (en) * | 1986-04-25 | 1987-11-04 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPH0653283A (en) * | 1992-07-31 | 1994-02-25 | Matsushita Electric Ind Co Ltd | Electrode connecting apparatus |
| JP3220254B2 (en) * | 1992-09-24 | 2001-10-22 | 京セラ株式会社 | Semiconductor element mounting method |
| JPH06168979A (en) * | 1992-11-30 | 1994-06-14 | Kyocera Corp | Method of mounting semiconductor chip |
| JP2000058567A (en) * | 1998-08-05 | 2000-02-25 | Matsushita Electric Ind Co Ltd | Jig for assembling semiconductor device and its assembling method |
| JP2000150571A (en) * | 1998-11-05 | 2000-05-30 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
| JP2000243781A (en) * | 1999-02-17 | 2000-09-08 | Seiko Precision Inc | Bonding method of substrate and lead |
| JP3780806B2 (en) * | 2000-03-07 | 2006-05-31 | 松下電器産業株式会社 | Electronic component mounting equipment |
-
2013
- 2013-06-25 JP JP2013132922A patent/JP2014103378A/en active Pending
- 2013-07-04 KR KR1020130078239A patent/KR20140005797A/en not_active Application Discontinuation
- 2013-07-05 TW TW102124102A patent/TW201411747A/en unknown
- 2013-07-05 CN CN201310282643.5A patent/CN103531489A/en active Pending
- 2013-07-05 CN CN201320401223XU patent/CN203367239U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105388641A (en) * | 2014-08-20 | 2016-03-09 | 松下知识产权经营株式会社 | Component crimping apparatus |
| CN105388641B (en) * | 2014-08-20 | 2020-10-27 | 松下知识产权经营株式会社 | Component crimping device |
| CN111656505A (en) * | 2018-01-25 | 2020-09-11 | 库利克和索夫工业公司 | Bonding tool for a bonding machine, bonding machine for bonding semiconductor elements and associated method |
| CN111656505B (en) * | 2018-01-25 | 2024-01-30 | 库利克和索夫工业公司 | Soldering tool for soldering machine, soldering machine for soldering semiconductor element and related method |
| CN116110805A (en) * | 2023-04-13 | 2023-05-12 | 深圳宏芯宇电子股份有限公司 | Chip bonding method, structure and memory |
| CN116110805B (en) * | 2023-04-13 | 2023-07-11 | 深圳宏芯宇电子股份有限公司 | Chip bonding method, structure and memory |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140005797A (en) | 2014-01-15 |
| CN203367239U (en) | 2013-12-25 |
| JP2014103378A (en) | 2014-06-05 |
| TW201411747A (en) | 2014-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106797080B (en) | Anisotropic conductive film and connection structural bodies | |
| CN203367239U (en) | Pressure connection device | |
| CN107960139B (en) | Anisotropic conductive film and connection structural bodies | |
| CN107112067B (en) | Anisotropic conductive film | |
| TWI643417B (en) | Anisotropic conductive film and connection structure | |
| KR101129762B1 (en) | Production method of semiconductor device | |
| CN107735909B (en) | Anisotropic conductive film and connection structural bodies | |
| TW201535017A (en) | Alignment method, method for connecting electronic component, method for manufacturing connection body, connection body, anisotropic electroconductive film | |
| CN110499119A (en) | Anisotropic conductive film and connecting structure body | |
| TWI673570B (en) | Anisotropic conductive adhesive, method of manufacturing connector, and connection method of electronic component | |
| JP6006955B2 (en) | Manufacturing method of connecting body, connecting method | |
| KR20160119086A (en) | Anisotropic conductive film and production method therefor | |
| TWI494038B (en) | Method of manufacturing a connecting structure | |
| CN106063043B (en) | Anisotropic conductive film and method for producing same | |
| CN103531437A (en) | Method for manufacturing semiconductor device and semiconductor device | |
| KR102091657B1 (en) | method for manufacturing the camera module package | |
| JP2016103634A (en) | Photo-curing anisotropic conductive adhesive material, method for manufacturing connection body, and method for connecting electronic part | |
| TWI834608B (en) | Adhesive composition and manufacturing method of connector | |
| WO2016152441A1 (en) | Anisotropic connection structure | |
| JP2006278757A (en) | Imaging device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140122 |