CN103531237A - System and method for quickly burning memory chip - Google Patents
System and method for quickly burning memory chip Download PDFInfo
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- CN103531237A CN103531237A CN201210233187.0A CN201210233187A CN103531237A CN 103531237 A CN103531237 A CN 103531237A CN 201210233187 A CN201210233187 A CN 201210233187A CN 103531237 A CN103531237 A CN 103531237A
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- memory chip
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- governor circuit
- transformation module
- voltage transformation
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Abstract
The invention discloses a system and method for quickly burning a memory chip. The system comprises a main control circuit and a memory chip, wherein the main control circuit is connected with the memory chip through a data line; a voltage conversion module is arranged between the main control circuit and the memory chip; and the voltage conversion module converts a standard voltage Vcc of the main control circuit into a voltage Vcc_m, and outputs the voltage Vcc_m to the memory chip as a supply voltage. The system and method enhance the burning efficiency, increase the burning speed, and save the time cost for producers.
Description
Technical field
The present invention relates to memory technology field, particularly a kind of system and method for fast writing memory chip.
Background technology
In many electronic equipments (as mobile phone etc.), the operation of system needs the memory chip on motherboard to provide working procedure for it, otherwise system cannot start.Therefore, the producer need to be stored in program code in memory chip by cd-rom recorder, and this has caused extra time cost.In actual applications, accelerate replication rate, improving burning efficiency is very significant thing.
As shown in Figure 1, system chart for existing burning memory chip, it comprises a governor circuit 1 and a storer 2, described governor circuit 1 is connected with storer with data line by power lead, in the burning process of chip, described governor circuit 1 is except sending instruction and data to storer, so that beyond store program code, also need, for storer 2 provides power supply, storer 2 to be worked normally.
In traditional cd-rom recorder, the power supply that governor circuit 1 offers storer 2 is the reference power supply on motherboard, and voltage is the normal voltage of memory operation.But well-known, in order to strengthen the environmental suitability of memory chip, chip designers can sacrifice the performance of a part of storer under normal voltage, so that chip can both be worked normally in certain temperature range and certain voltage scope (Vmin ~ Vmax).Therefore, under normal voltage, storer can't reach the fastest replication rate.
Therefore, how above-mentioned technical matters is solved, be those skilled in the art's research direction place.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of system and method for fast writing memory chip, it is in order to strengthen the environmental suitability of memory chip, chip designers can work normally by assurance storer in design process in certain voltage range, particularly in burning process, the operation that storer is generally only wiped and programmed, thereby can adapt to larger voltage range, storer is programmed under different supply voltages and the speed of wiping has difference, general voltage is higher, speed is faster, therefore, the present invention by setting up a voltage transformation module between governor circuit and storer, with faster procedure code, be burnt to the speed of memory chip, save recordable time.
In order to achieve the above object, the invention provides a kind of system of fast writing memory chip, it comprises a governor circuit and a memory chip, described governor circuit is connected with described memory chip by data line, it is characterized in that, between described governor circuit and described memory chip, be provided with a voltage transformation module, described voltage transformation module is by the normal voltage V of described governor circuit
ccbe converted to another magnitude of voltage V
cc_m, and by this magnitude of voltage V
cc_mflowing to memory chip uses as supply voltage.
During enforcement, described governor circuit is connected with described voltage transformation module by a control line, for described voltage transformation module is controlled.
In order to achieve the above object, the present invention also provides a kind of method of fast writing memory chip, and it comprises the following steps:
Step S1, is connected by a data line governor circuit with memory chip;
Step S2 is provided with a voltage transformation module between described governor circuit and described memory chip;
Step S3, described voltage transformation module is by the normal voltage V of governor circuit
ccbe converted to magnitude of voltage V
cc_m, and by magnitude of voltage V
cc_mflowing to memory chip uses as supply voltage.
Compared with prior art, the present invention by increasing a voltage transformation module, is guaranteeing, under the prerequisite of storer normal operation, to improve programming and the erasing speed of storer, thereby is improving burning efficiency, accelerating replication rate, for the producer has saved time cost.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the block diagram of system of existing burning memory chip;
Fig. 2 is the block diagram of system of fast writing memory chip of the present invention;
Fig. 3 is the system one embodiment composition frame chart of fast writing memory chip of the present invention;
Fig. 4 is the process flow diagram of fast writing memory chip method of the present invention.
Description of reference numerals:
1,3-governor circuit; 2,4-memory chip; 5-voltage transformation module.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not paying the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 2, be the block diagram of system of fast writing memory chip of the present invention; The system of invention fast writing memory chip of the present invention comprises a governor circuit 3, a memory chip 4 and a voltage transformation module 5, wherein, described governor circuit 3 is connected with described memory chip 3 by data line Data, between governor circuit 3 described in described voltage transformation module 5 is connected to and described memory chip 4, in the process of burning, described voltage transformation module 5 is by the normal voltage V of governor circuit 1
ccbe converted to another magnitude of voltage V
cc_m, and by this magnitude of voltage V
cc_mflow to memory chip 4 and use as supply voltage, under this supply voltage, under can the assurance function correct prerequisite of memory chip, programme and the velocity ratio of wiping wants fast under normal voltage.Thereby accelerated the speed that program code is burnt to memory chip, saved recordable time.
As shown in Figure 3, system one embodiment composition frame chart for fast writing memory chip of the present invention, the structure of this embodiment is same as described above, difference is: described governor circuit 3 is connected with described voltage transformation module 4 by a control line, for voltage transformation module 4 is controlled, make output voltage controlled, this structure can be changed and provide more voltage, be convenient to debugging and adapt to a greater variety of memory chips.
As shown in Figure 4, be the process flow diagram of fast writing memory chip method of the present invention, the method comprises the following steps:
Step S1, is connected by a data line governor circuit with memory chip;
Step S2 is provided with a voltage transformation module between described governor circuit and described memory chip;
Step S3, described voltage transformation module is by the normal voltage V of governor circuit
ccbe converted to magnitude of voltage V
cc_m, and by magnitude of voltage V
cc_mflowing to memory chip uses as supply voltage.
Therefore,, under the supply voltage after conversion, under can the assurance function correct prerequisite of memory chip, programme and the velocity ratio of wiping wants fast under normal voltage.Thereby accelerated the speed that program code is burnt to memory chip, saved recordable time.
In sum, the present invention by increasing a voltage transformation module, is guaranteeing, under the prerequisite of storer normal operation, to improve programming and the erasing speed of storer, thereby is improving burning efficiency, accelerating replication rate, for the producer has saved time cost.
Finally it should be noted that: above embodiment only, in order to technical scheme of the present invention to be described, is not intended to limit; Although the present invention is had been described in detail with reference to previous embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record previous embodiment is modified, or part technical characterictic is wherein equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution depart from the spirit and scope of embodiment of the present invention technical scheme.
Claims (3)
1. the system of a fast writing memory chip, it comprises a governor circuit and a memory chip, described governor circuit is connected with described memory chip by data line, it is characterized in that, between described governor circuit and described memory chip, be provided with a voltage transformation module, described voltage transformation module is by the normal voltage V of described governor circuit
ccbe converted to another magnitude of voltage V
cc_m, and by this magnitude of voltage V
cc_mflowing to memory chip uses as supply voltage.
2. the system of a kind of fast writing memory chip according to claim 1, is characterized in that, described governor circuit is connected with described voltage transformation module by a control line, for described voltage transformation module is controlled.
3. a method for fast writing memory chip, is characterized in that, it comprises the following steps:
Step S1, is connected by a data line governor circuit with memory chip;
Step S2 is provided with a voltage transformation module between described governor circuit and described memory chip;
Step S3, described voltage transformation module is by the normal voltage V of governor circuit
ccbe converted to magnitude of voltage V
cc_m, and by magnitude of voltage V
cc_mflowing to memory chip uses as supply voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210233187.0A CN103531237A (en) | 2012-07-05 | 2012-07-05 | System and method for quickly burning memory chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210233187.0A CN103531237A (en) | 2012-07-05 | 2012-07-05 | System and method for quickly burning memory chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103531237A true CN103531237A (en) | 2014-01-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210233187.0A Pending CN103531237A (en) | 2012-07-05 | 2012-07-05 | System and method for quickly burning memory chip |
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| CN (1) | CN103531237A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101089996A (en) * | 2006-06-12 | 2007-12-19 | 凌阳科技股份有限公司 | Circuit analog system with auto-increment function |
| CN202018825U (en) * | 2011-03-07 | 2011-10-26 | 杭州士兰微电子股份有限公司 | Writer |
| US20120002485A1 (en) * | 2009-05-19 | 2012-01-05 | Panasonic Corporation | Semiconductor memory device |
| CN202150274U (en) * | 2011-07-19 | 2012-02-22 | 华映视讯（吴江）有限公司 | Anti-lost circuit structure for EEPROM (Electrically Erasable Programmable Read Only Memory) data |
-
2012
- 2012-07-05 CN CN201210233187.0A patent/CN103531237A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101089996A (en) * | 2006-06-12 | 2007-12-19 | 凌阳科技股份有限公司 | Circuit analog system with auto-increment function |
| US20120002485A1 (en) * | 2009-05-19 | 2012-01-05 | Panasonic Corporation | Semiconductor memory device |
| CN202018825U (en) * | 2011-03-07 | 2011-10-26 | 杭州士兰微电子股份有限公司 | Writer |
| CN202150274U (en) * | 2011-07-19 | 2012-02-22 | 华映视讯（吴江）有限公司 | Anti-lost circuit structure for EEPROM (Electrically Erasable Programmable Read Only Memory) data |
Non-Patent Citations (1)
| Title |
|---|
| 王鸣阳等译: "《纳米技术手册》", 31 January 2005 * |
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Application publication date: 20140122 |
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