CN103515367B - Package structure for LED - Google Patents
Package structure for LED Download PDFInfo
- Publication number
- CN103515367B CN103515367B CN201210210107.XA CN201210210107A CN103515367B CN 103515367 B CN103515367 B CN 103515367B CN 201210210107 A CN201210210107 A CN 201210210107A CN 103515367 B CN103515367 B CN 103515367B
- Authority
- CN
- China
- Prior art keywords
- led
- crystal particle
- led crystal
- resettlement section
- reflector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000013078 crystal Substances 0.000 claims abstract description 94
- 239000002245 particle Substances 0.000 claims abstract description 82
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000003822 epoxy resin Substances 0.000 claims abstract description 33
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 33
- 238000004806 packaging method and process Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000003287 optical effect Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 7
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000004925 denaturation Methods 0.000 description 12
- 230000036425 denaturation Effects 0.000 description 12
- 230000007423 decrease Effects 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Landscapes
- Led Device Packages (AREA)
Abstract
A kind of package structure for LED, including substrate, the electrode being arranged on substrate, reflector, light-emitting component and packaging body, it is formed the block being positioned at bottom reflector on described substrate, the bottom space of reflector is separated into the first not connected resettlement section and the second resettlement section by this block, described light-emitting component includes the first LED crystal particle being arranged in the first resettlement section and the second LED crystal particle being arranged in the second resettlement section, the emission wavelength of this first LED crystal particle is less than the second LED crystal particle, it is filled with cyclic aliphatic based epoxy resin in this first resettlement section, it is all filled with bisphenol A type epoxy resin in the headroom of this second resettlement section and reflector.This kind of package structure for LED can be taken into account and good go out optical property and relatively low manufacturing cost.
Description
Technical field
The present invention relates to a kind of semiconductor structure, particularly relate to a kind of package structure for LED.
Background technology
Compared to traditional light emitting source, light emitting diode (Light Emitting Diode, LED) there is the advantages such as lightweight, volume is little, it is low to pollute, life-span length, it is as a kind of novel light emitting source, it is applied to more and more in the middle of each field, such as street lamp, traffic lights, signal lamp, shot-light and ornament lamp etc..
Existing package structure for LED generally includes substrate, the electrode being positioned on substrate, the light-emitting diode chip for backlight unit being carried on substrate and being electrically connected with the electrodes and packaging body on substrate for the covering luminousing diode chip.During LED package, in order to reduce cost, generally use lower-cost bisphenol A type epoxy resin to carry out covering luminousing diode chip and as packaging body.But, owing to bisphenol A type epoxy resin is after the light beam direct irradiation by short wavelength's (below about 500 nanometers), easily denaturation and cause light transmittance to decline, final affect package structure for LED go out optical property so that cost reduce the LED encapsulation body affecting go out optical property.
Content of the invention
In view of this, it is necessary to a kind of package structure for LED can taken into account manufacturing cost and go out optical property is provided.
nullA kind of package structure for LED，Including substrate、It is arranged on electrode and the reflector of upper surface of base plate，It is arranged on the light-emitting component that reflector is interior and is electrically connected to electrode、And it is interior to cover the packaging body of LED crystal particle to be filled in reflector，Described upper surface of base plate is formed with the block being positioned at bottom reflector，The bottom space of reflector is separated into the first not connected resettlement section and the second resettlement section by this block，Described light-emitting component includes the first LED crystal particle being arranged in the first resettlement section and the second LED crystal particle being arranged in the second resettlement section，The wavelength of this first LED crystal particle is less than the wavelength of the second LED crystal particle，It is filled with the first packaging body in this first resettlement section，It is all filled with the second packaging body in the headroom of this second resettlement section and reflector，The material of this first packaging body is cyclic aliphatic based epoxy resin，The material of this second packaging body is bisphenol A type epoxy resin.
This kind of package structure for LED uses the cyclic aliphatic based epoxy resin of high temperature resistant and anti-short-wavelength light to cover the first shorter LED crystal particle of emission wavelength, and use lower-cost bisphenol A type epoxy resin to cover the second longer LED crystal particle of this emission wavelength and cyclic aliphatic based epoxy resin, owing to this cyclic aliphatic based epoxy resin is difficult to the denaturation because of the irradiation of short-wavelength beam, thus the denaturation by the short-wavelength light direct irradiation of the first LED crystal particle can be prevented effectively from, and then avoid causing the decline of light transmittance, it is difficult to the denaturation because of the irradiation of long wavelength light beam additionally, due to bisphenol A type epoxy resin, thus bisphenol A type epoxy resin denaturation will not cause the decline of light transmittance because the light beam of the second LED crystal particle irradiates, reduce cost on the premise of ensureing light transmission.
With reference to the accompanying drawings, in conjunction with detailed description of the invention, the invention will be further described.
Brief description
Fig. 1 is the top view of the package structure for LED of first embodiment of the invention.
Fig. 2 is the sectional view of the package structure for LED along II-II shown in Fig. 1.
Fig. 3 is the fractionation structural representation of package structure for LED shown in Fig. 1.
Fig. 4 is the top view of the package structure for LED of second embodiment of the invention.
Fig. 5 is the sectional view of the package structure for LED along V-V shown in Fig. 4.
Main element symbol description
| Package structure for LED | 10、20 |
| Substrate | 11 |
| Loading end | 110 |
| Bottom surface | 112 |
| Side | 114 |
| Block | 116 |
| Electrode | 12 |
| First electrode | 121 |
| Second electrode | 122 |
| 3rd electrode | 123 |
| 4th electrode | 124 |
| Reflector | 13 |
| Receiving space | 130 |
| Opening | 132 |
| Bottom space | 134 |
| Headroom | 136 |
| First resettlement section | 1340 |
| Second resettlement section | 1342 |
| LED crystal particle | 14、24 |
| First LED crystal particle | 140 |
| Second LED crystal particle | 142 |
| 3rd LED crystal particle | 144 |
| Packaging body | 15 |
| First packaging body | 150 |
| Second packaging body | 152 |
Following detailed description of the invention will further illustrate the present invention in conjunction with above-mentioned accompanying drawing.
Detailed description of the invention
Seeing Fig. 1, Fig. 2 and Fig. 3, the package structure for LED 10 that first embodiment of the invention provides includes substrate the 11st, electrode the 12nd, reflector the 13rd, LED crystal particle 14 and packaging body 15.
Described substrate 11 is insulated substrate, and its material can be the insulating materials such as sapphire (Sapphire), carborundum (SiC).This substrate 11 includes that the 112nd, bottom surface that loading end 110 (i.e. substrate 11 upper surface shown in Fig. 1) is relative with this loading end 110 is positioned between loading end 110 and bottom surface 112 and connects loading end 110 and the side 114 of bottom surface 112 and be directed away from the protruding block 116 in the direction of bottom surface 112 from loading end 110.This block 116 is positioned at bottom reflector 13.Preferably, the size of described block 116 is gradually reduced along the direction away from loading end 110 and bottom surface 112 from loading end 110, so that block 116 has the side of inclination, to assist reflector 13 to carry out light correction.In the present embodiment, the section of this block 116 is that on-right angle is trapezoidal.
Described electrode 12 is arranged on the loading end 110 of substrate 11 to provide electrical connection to LED crystal particle 14.This electrode 12 includes the first electrode the 121st, the second electrode the 122nd, the 3rd electrode 123 and the 4th electrode 124.This first electrode the 121st, the second electrode the 122nd, the 3rd electrode 123 and the 4th electrode 124 respectively from the loading end 110 of substrate 11 across the side 114 of substrate 11 and finally extend to substrate 11 bottom surface 112 on.
Described reflector 13 is arranged on the loading end 110 of substrate 11, and this loading end 110 of local complexity and the electrode 12 being positioned on this loading end 110.This reflector 13 surrounds a receiving space 130, and this reflector 13 is formed with opening 132 away from the side of substrate 11.Receiving space 130 is divided into bottom space the 134th, 136 two parts of headroom by plane (in figure described in dotted line) residing for the top of described block 116, and the bottom space 134 of reflector 13 is separated into the first not connected resettlement section 1340 and the second resettlement section 1342 by this block 116.Described first electrode 121 and the second electrode 122 are positioned at the first resettlement section 1340, and described 3rd electrode 123 and the 4th electrode 124 are positioned at the second resettlement section 1342.
In the present embodiment, this opening 132 general ellipsoidal.In order to adjust light direction, the inwall of reflector 13 is set to skewed by the present embodiment, the size making this receiving space 130 is gradually reduced towards substrate 11 direction at opening 132, namely, receiving space 130 presents inverted truncation taper, and the inwall of this reflector 13 arranges and is designed to other shapes also dependent on actual demand and is not limited thereto certainly.
In described LED crystal particle 14 is arranged on reflector 13 and be electrically connected to electrode 12.This LED crystal particle 14 includes the first LED crystal particle 140 being arranged in the first resettlement section 1340 and the second LED crystal particle 142 being arranged in the second resettlement section 1342.
This first LED crystal particle 140 is arranged on the first electrode 121 and is electrically connected to the first electrode 121 and the second electrode 122.This second LED crystal particle 142 is arranged on the 3rd electrode 123 and is electrically connected to the 3rd electrode 123 and the 4th electrode 124.The emission wavelength of this first LED crystal particle 140 is less than the emission wavelength of the second LED crystal particle 142.In the present embodiment, this first LED crystal particle 140 is blue light-emitting diode crystal grain, and this second LED crystal particle 142 is red light-emitting diode crystal grain.Further, this first LED crystal particle 140 can be the blue light-emitting diode crystal grain that emission wavelength is 450 ran, and this second LED crystal particle 142 can be the red light-emitting diode crystal grain that emission wavelength is 630 ran.
It is interior to cover LED crystal particle 14 that described packaging body 15 is arranged on reflector 13.This packaging body 15 includes the first packaging body 150 and the second packaging body 152.This first packaging body 150 is filled in the first resettlement section 1340, and its material is cyclic aliphatic based epoxy resin.This second packaging body 152 is filled in the headroom 136 of the second resettlement section 1342 and reflector, and its material is bisphenol A type epoxy resin.
This kind of package structure for LED 10 uses the cyclic aliphatic based epoxy resin of high temperature resistant and anti-short-wavelength light to cover the first shorter LED crystal particle of emission wavelength the 140th, to use bisphenol A type epoxy resin to cover the second longer LED crystal particle 142 of this emission wavelength and cyclic aliphatic based epoxy resin, have an advantage in that: cyclic aliphatic based epoxy resin is difficult to the denaturation because of the irradiation of short-wavelength beam, thus the denaturation by the short-wavelength light direct irradiation of the first LED crystal particle 140 can be prevented effectively from, it is to avoid cause the decline of light transmittance；Bisphenol A type epoxy resin is difficult to the denaturation because of the irradiation of long wavelength light beam, thus bisphenol A type epoxy resin denaturation will not cause the decline of light transmittance because the light beam of the second LED crystal particle 142 irradiates；Bisphenol A type epoxy resin cost is relatively low, the part do not filled by cyclic aliphatic based epoxy resin in reflector fill out be provided with bisphenol A type epoxy resin can aforementioned ensure optical property on the premise of reduce cost to a certain extent.It should be noted that, although the light of short wavelength finally still can reach the bisphenol A type epoxy resin being positioned above the first LED crystal particle 140, but owing to there being the existence of cyclic aliphatic based epoxy resin between the bisphenol A type epoxy resin above the first LED crystal particle 140 and the first LED crystal particle 140, so that the bisphenol A type epoxy resin that the first LED crystal particle 140 is above it is farther out, and this part bisphenol A type epoxy resin will not be by short-wavelength beam direct irradiation, significantly delay the process of its denaturation, avoid the denaturation during the service life of package structure for LED 10 of this bisphenol A type epoxy resin.
In addition, in view of the bisphenol A type epoxy resin thinner thickness above the first LED crystal particle 140, even if owing to this part bisphenol A type epoxy resin there occurs denaturation in during the service life that individual difference makes extremely individual other package structure for LED 10, but to go out optical property impact less on overall because of its thinner thickness.Extra, first LED crystal particle 140 can be separated by this block 116 with the second LED crystal particle 142, short wavelength light from the first LED crystal particle 140 will not be irradiated on the second LED crystal particle 142, it is to avoid the second LED crystal particle 142 absorbs and reduces light extraction efficiency from the light of the first LED crystal particle 140.
Seeing Fig. 4 and Fig. 5, the package structure for LED 20 that second embodiment of the invention provides includes substrate the 11st, electrode the 12nd, reflector the 13rd, LED crystal particle 24 and packaging body 15.The structure configuration of described substrate the 11st, electrode the 12nd, reflector 13 and packaging body 15 is identical with the package structure for LED 10 in first embodiment.
It is with package structure for LED in first embodiment 10 difference, the LED crystal particle 24 of package structure for LED 20 not only includes the first LED crystal particle 140 being arranged in the first resettlement section 1340 and the second LED crystal particle 142 being arranged in the second resettlement section 1342, and this LED crystal particle 24 also includes the 3rd LED crystal particle 144 being arranged in the first resettlement section 1340.
This first LED crystal particle 140 and the 3rd LED crystal particle 144 are arranged on the first electrode 121 and are respectively electrically connected to the first electrode 121 and the second electrode 122.This second LED crystal particle 142 is arranged on the 3rd electrode 123 and is electrically connected to the 3rd electrode 123 and the 4th electrode 124.In the present embodiment, this first LED crystal particle 140 and the 3rd LED crystal particle 144 are arranged in series.The emission wavelength of this first LED crystal particle 140 is less than the emission wavelength of the second LED crystal particle 142, and the emission wavelength of the 3rd LED crystal particle 144 is between the emission wavelength and the emission wavelength of the second LED crystal particle 142 of the first LED crystal particle 140.In the present embodiment, this first LED crystal particle 140 is blue light-emitting diode crystal grain, and this second LED crystal particle 142 is red light-emitting diode crystal grain, and the 3rd LED crystal particle 144 is green light LED crystal grain.Further, this first LED crystal particle 140 can be the blue light-emitting diode crystal grain that emission wavelength is 450 ran, this second LED crystal particle 142 can be the red light-emitting diode crystal grain that emission wavelength is 630 ran, and the 3rd LED crystal particle 144 can be the green light LED crystal grain that emission wavelength is 500 ran.
This kind of package structure for LED 20, except having the above-mentioned advantage of package structure for LED 10 in first embodiment the 1st, the 2nd, the 3rd, the 4th, the 5th, in addition to 6, also has and can blend together white light and the advantage be applicable to the device such as ambient lighting, backlight.
Certainly, this first LED crystal particle 140 and the 3rd LED crystal particle 144 are not limited to be arranged on the first electrode 121, this first LED crystal particle 140 and the 3rd LED crystal particle 144 can be separately positioned on the one of the first electrode the 121st, the second electrode 122, also can be arranged on the second electrode 122, as long as ensureing that the first LED crystal particle 140 and the 3rd LED crystal particle 144 are connected and be electrically connected to the first electrode 121 and the second electrode 122.
In addition, it should be noted that, in order to clearly show package structure for LED the 10th, 20 the electrical connection situation of each LED crystal particle, still remain the metal wire for connecting luminous diode crystal grain in sectional view Fig. 2, Fig. 5 of the present invention, and and analyse the respective metal line part that situation will be cut away delete not according to actual.
It is understood that for the person of ordinary skill of the art, can be made other according to the technology design of the present invention and various corresponding change and deformation, and all these change the protection domain that all should belong to the claims in the present invention with deformation.
Claims (3)
1. a package structure for LED, including substrate, be arranged on the electrode of upper surface of base plate and anti-
Penetrate cup, in being arranged in reflector and be electrically connected to the light-emitting component of electrode and being filled in reflector with
Cover the packaging body of LED crystal particle, it is characterised in that: described upper surface of base plate is formed and is positioned at instead
Penetrating the block bottom cup, the bottom space of reflector is separated into the first not connected resettlement section by this block
With the second resettlement section, described light-emitting component includes that the first light emitting diode being arranged in the first resettlement section is brilliant
Grain and the second LED crystal particle being arranged in the second resettlement section, this first LED crystal particle
Wavelength less than the wavelength of the second LED crystal particle, be filled with the first packaging body in this first resettlement section,
It is all filled with the second packaging body, this first packaging body in the headroom of this second resettlement section and reflector
Material be cyclic aliphatic based epoxy resin, the material of this second packaging body is bisphenol A type epoxy resin.
2. package structure for LED as claimed in claim 1, it is characterised in that described block
Size is gradually reduced to the direction away from substrate from upper surface of base plate.
3. package structure for LED as claimed in claim 1, it is characterised in that described first
Optical diode grain is blue light-emitting diode crystal grain, and described second LED crystal particle is red light-emitting
Diode crystal particle.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210210107.XA CN103515367B (en) | 2012-06-25 | 2012-06-25 | Package structure for LED |
| TW101129296A TWI458137B (en) | 2012-06-25 | 2012-08-14 | Light emitting diode package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210210107.XA CN103515367B (en) | 2012-06-25 | 2012-06-25 | Package structure for LED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103515367A CN103515367A (en) | 2014-01-15 |
| CN103515367B true CN103515367B (en) | 2016-10-05 |
Family
ID=49897829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210210107.XA Expired - Fee Related CN103515367B (en) | 2012-06-25 | 2012-06-25 | Package structure for LED |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103515367B (en) |
| TW (1) | TWI458137B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106935578A (en) * | 2017-05-08 | 2017-07-07 | 合肥市华达半导体有限公司 | A kind of encapsulating structure of light emitting diode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1855480A (en) * | 2005-04-28 | 2006-11-01 | 夏普株式会社 | Semiconductor luminous component |
| CN102263098A (en) * | 2010-05-24 | 2011-11-30 | Lg伊诺特有限公司 | Light emitting device and light unit having the same |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5192811B2 (en) * | 2004-09-10 | 2013-05-08 | ソウル セミコンダクター カンパニー リミテッド | Light emitting diode package with multiple mold resin |
| JP2008041699A (en) * | 2006-08-01 | 2008-02-21 | Showa Denko Kk | Led package |
| KR20090130193A (en) * | 2007-04-26 | 2009-12-18 | 히다치 가세고교 가부시끼가이샤 | Thermosetting resin composition and optical member using cured product of the thermosetting resin composition |
| TWI378573B (en) * | 2007-10-31 | 2012-12-01 | Young Lighting Technology Corp | Light emitting diode package |
| KR100982994B1 (en) * | 2008-10-15 | 2010-09-17 | 삼성엘이디 주식회사 | Led package module |
| TWI399873B (en) * | 2009-03-03 | 2013-06-21 | Everlight Electronics Co Ltd | Light emitting diode package structure and manufacturing method thereof |
| TWI447969B (en) * | 2010-10-20 | 2014-08-01 | Interlight Optotech Corp | Light-emitting diode package structure |
-
2012
- 2012-06-25 CN CN201210210107.XA patent/CN103515367B/en not_active Expired - Fee Related
- 2012-08-14 TW TW101129296A patent/TWI458137B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1855480A (en) * | 2005-04-28 | 2006-11-01 | 夏普株式会社 | Semiconductor luminous component |
| CN102263098A (en) * | 2010-05-24 | 2011-11-30 | Lg伊诺特有限公司 | Light emitting device and light unit having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201401569A (en) | 2014-01-01 |
| TWI458137B (en) | 2014-10-21 |
| CN103515367A (en) | 2014-01-15 |
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Effective date of registration: 20160706 Address after: 518000 Guangdong Province, Shenzhen New District of Longhua City, Dalang street, Hua Sheng Lu Yong Jingxuan commercial building 1608 Applicant after: Jinyang Shenzhen sea Network Intelligent Technology Co.,Ltd. Address before: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant before: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. Effective date of registration: 20160706 Address after: 518109 Guangdong province Shenzhen city Longhua District Dragon Road No. 83 wing group building 11 floor Applicant after: SCIENBIZIP CONSULTING (SHEN ZHEN) Co.,Ltd. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Street tabulaeformis Industrial Zone tenth east two Ring Road No. two Applicant before: ZHANJING Technology (Shenzhen) Co.,Ltd. Applicant before: Advanced Optoelectronic Technology Inc. |
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Inventor after: Li Anyong Inventor before: Luo Xingfen |
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Effective date of registration: 20170419 Address after: 528403 Guangdong city of Zhongshan Province Town Industrial Park, Heng Wang Zhen Tong Yi Street No. 2 4 floor Patentee after: Zhongshan Chenxi Photoelectric Technology Co.,Ltd. Address before: 266000 Licang, Qingdao, No. nine East water road, No. 320, No. Patentee before: QINGDAO YULANXIANG BUSINESS SERVICE Co.,Ltd. |
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