CN103515265B - The detection method of through hole and lower metal line deviation of the alignment - Google Patents
The detection method of through hole and lower metal line deviation of the alignment Download PDFInfo
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- CN103515265B CN103515265B CN201310496439.3A CN201310496439A CN103515265B CN 103515265 B CN103515265 B CN 103515265B CN 201310496439 A CN201310496439 A CN 201310496439A CN 103515265 B CN103515265 B CN 103515265B
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Abstract
The detection method of a kind of through hole of the present invention and lower metal line deviation of the alignment, parallel with line of cut by arranging respectively on wafer, be centrosymmetric and disjunct first metal wire and the second metal wire mutually, wherein, first metal wire and the second metal wire have vertically with many protruding metal lines of definite value t increasing or decreasing, scanning between the first metal wire and the second metal wire and with protruding metal line through hole one to one, the image data of through hole and the standard video data without deviation of the alignment are contrasted, accurately to detect the deviation of the alignment of through hole and lower metal line, ensure that precision and the repeatability of integrated circuit fabrication process, and then improve the yield of product.
Description
Technical field
The present invention relates to integrated circuit fabrication process field, particularly relate to the detection method of a kind of through hole and lower metal line deviation of the alignment.
Background technology
Along with large scale integrated circuit manufacture is higher towards integrated level, the future development that critical size constantly reduces and device architecture becomes increasingly complex is more and more higher with repeatable requirement to the precision of integrated circuit fabrication process.For meeting the requirement of integrated circuits integral electric property, in the concrete manufacture process of chip, normal the stacking together from level to level of the circuitous pattern of different structure.Wherein, integrated circuit leading portion manufacturing process stack mainly grid and contact hole, back segment stack mainly through hole and metal wire.Because through hole and metal wire are the repetitive structures of multilayer at back segment, especially in some advanced technologies, it has the repetitive structure of nearly 10 layers, therefore the deviation of the alignment of through hole and metal wire how is accurately detected, to ensure precision and the repeatability of integrated circuit fabrication process, and then the yield of improving product just seems particularly important.
In the prior art, the deviation of the alignment value of through hole and metal wire is detected usually through optical means, with the precision of control integration circuit manufacturing process and repeatability.But because optical means itself is subject to the restriction of wavelength resolution size, when device size constantly reduces, this method just can not be used for accurately detecting the deviation of the alignment of through hole and metal wire, thus precision and the repeatability of integrated circuit fabrication process cannot be ensured, and then the yield that requirement that technique accurately controls carrys out improving product can not be met.
Therefore, the method finding deviation of the alignment between a kind of accurate detection through hole and lower metal line just seems very important for the quality of boost device.
Summary of the invention
Object of the present invention is, for the problems referred to above, propose the detection method of a kind of through hole and lower metal line deviation of the alignment, the method is parallel with line of cut by arranging respectively on wafer, be centrosymmetric and disjunct first metal wire and the second metal wire mutually, wherein, first metal wire and the second metal wire have vertically with many protruding metal lines of definite value t increasing or decreasing, scanning between the first metal wire and the second metal wire and with protruding metal line through hole one to one, the image data of through hole and the standard video data without deviation of the alignment are contrasted, accurately to detect the deviation of the alignment of through hole and lower metal line, ensure that precision and the repeatability of integrated circuit fabrication process, and then improve the yield of product.
For achieving the above object, the detection method of a kind of through hole of the present invention and lower metal line deviation of the alignment, comprises the steps:
Step S01, on wafer, arrange first metal wire parallel with line of cut and the second metal wire respectively, described first metal wire and the second metal wire have vertically with the n bar protruding metal line of definite value t increasing or decreasing, wherein, n be greater than 2 integer; Described first metal wire is centrosymmetric with the second metal wire and is not connected mutually;
Step S02, scanning between described first metal wire and the second metal wire and with described protruding metal line through hole one to one, to obtain the image data of described through hole, wherein, when described protruding metal line is connected with through hole, scanning result is shown as bright, and when described protruding metal line is not connected with through hole, scanning result is shown as secretly;
Step S03, the image data of described through hole and the standard video data without deviation of the alignment are contrasted, to detect the deviation of the alignment of described through hole and lower metal line, wherein, the described standard video data without deviation of the alignment are that described first metal wire is connected with through hole with the longest protruding metal line of the second metal wire, scanning result when other protruding metal lines are not connected with through hole.
Further, described first metal wire and the second metal wire are also connected to the device of a P type ion well and tungsten contact hole, wherein, described first metal wire and the second metal wire are connected with the contact hole on tungsten contact hole device with described P type ion well.
Further, the image data of described through hole scans the realization of described through hole by sweep electron microscope.
Further, the deviation of the alignment of described through hole and lower metal line comprises the deviation of the alignment in positive X-direction and the deviation of the alignment in negative X-direction.Wherein, the bright dark change of the described deviation of the alignment through hole that to be positive X-direction or negative X-direction be corresponding to the longest protruding metal line of described first metal wire and the second metal wire is determined.
Further, the width range of described protruding metal line is 10nm ~ 50nm.
Further, the scope of described definite value t is 1nm ~ 30nm.
Further, the image data of described through hole contrasts with the standard video data without deviation of the alignment, to calculate the quantity k of bright dark change through hole.
Further, when k is the integer being less than 2, described through-hole alignment deviation is 0; When k is the integer being more than or equal to 2, described through hole and lower metal line deviation of the alignment are (k-1) * t.
As can be seen from technique scheme, the detection method of a kind of through hole of the present invention and lower metal line deviation of the alignment, parallel with line of cut by arranging respectively on wafer, be centrosymmetric and disjunct first metal wire and the second metal wire mutually, wherein, first metal wire and the second metal wire have vertically with many protruding metal lines of definite value t increasing or decreasing, scanning between the first metal wire and the second metal wire and with protruding metal line through hole one to one, the image data of through hole and the standard video data without deviation of the alignment are contrasted, accurately to detect the deviation of the alignment of through hole and lower metal line, ensure that precision and the repeatability of integrated circuit fabrication process, and then improve the yield of product.
Accompanying drawing explanation
For can clearer understanding objects, features and advantages of the present invention, below with reference to accompanying drawing, preferred embodiment of the present invention be described in detail, wherein:
Fig. 1 is the device architecture schematic diagram of P type ion well and tungsten contact hole;
Fig. 2 is the structural representation of the first metal wire be connected with contact hole;
Fig. 3 is the first metal wire and through hole one_to_one corresponding schematic diagram;
Fig. 4 is that the first metal wire is connected with through hole with the longest protruding metal line of the second metal wire, other protruding metal lines and the disjunct standard video schematic diagram of through hole;
Fig. 5 is the structural representation of through hole and lower metal line deviation of the alignment in negative X-direction;
Fig. 6 is the structural representation of through hole and lower metal line deviation of the alignment in positive X-direction;
Fig. 7 is the flow chart of a specific embodiment of through hole of the present invention and lower metal line deviation of the alignment detection method.
Embodiment
Some exemplary embodiments embodying feature & benefits of the present invention describe in detail in the explanation of back segment.Be understood that the present invention can have various changes in different examples, it neither departs from the scope of the present invention, and explanation wherein and being shown in essence when the use explained, and be not used to limit the present invention.
Above-mentioned and other technical characteristic and beneficial effect, be described in detail 1-7 by reference to the accompanying drawings to a preferred embodiment of the detection method of through hole of the present invention and lower metal line deviation of the alignment.
The detection method of a kind of through hole of the present invention and lower metal line deviation of the alignment, comprises the steps:
Step S01, first metal wire 200 and second metal wire 200 ' parallel with line of cut is arranged respectively on wafer, first metal wire 200 and the second metal wire 200 ' have vertically with the n bar protruding metal line of definite value t increasing or decreasing, n be greater than 2 integer; Above-mentioned first metal wire 200 is centrosymmetric with the second metal wire 200 ' and is not connected mutually.
Refer to Fig. 1, Fig. 2 and Fig. 4, specifically, wafer arranges first metal wire 200 and second metal wire 200 ' parallel with line of cut respectively, and further, this first metal wire 200 and the second metal wire 200 ' are not connected and are centrosymmetric mutually each other.In addition, above-mentioned first metal wire 200 is connected with the device of a P type ion well and tungsten contact hole, second metal wire 200 ' is connected with the device of another P type ion well and tungsten contact hole, wherein the first metal wire 200 and the second metal wire 200 ' are all be connected with the contact hole 100 on tungsten contact hole device with P type ion well, are illustrated in figure 1 the device architecture schematic diagram of P type ion well and tungsten contact hole.In the present embodiment, above-mentioned first metal wire 200 and the second metal wire 200 ' have vertically with the n bar protruding metal line of definite value t increasing or decreasing, n be greater than 2 integer, particularly, if the longest protruding metal line length on the first metal wire 200 and the second metal wire 200 ' is L, so the length of other protruding metal lines is L-n*t.Closer, this first metal wire 200 has vertically with the n bar protruding metal line that definite value t successively decreases, n be greater than 2 integer, as shown in Figure 2; This second metal wire 200 ' has vertically with the n bar protruding metal line that definite value t increases progressively, n be greater than 2 integer.Wherein, the width range of above-mentioned protruding metal line is 10nm ~ 50nm; The scope of the length difference t for certain value between above-mentioned adjacent protrusion metal wire is 1nm ~ 30nm.
Step S02, scanning to be positioned between the first metal wire 200 and the second metal wire 200 ' and with above-mentioned protruding metal line through hole 300 one to one, to obtain the image data of through hole 300, wherein, when protruding metal line is connected with through hole 300, scanning result is shown as bright, and when protruding metal line is not connected with through hole 300, scanning result is shown as secretly.
Refer to Fig. 3, specifically, by sweep electron microscope scan to be positioned between the first metal wire 200 and the second metal wire 200 ' and with above-mentioned protruding metal line through hole 300 one to one, when this protruding metal line through hole 300 is corresponding thereto connected, scanning result is shown as bright, when this protruding metal line through hole 300 is not corresponding thereto connected, scanning result is shown as secretly, as shown in Figure 3.Then, above-mentioned the bright of each through hole 300 is secretly gathered, just obtains the image data of through hole 300.
Step S03, the image data of through hole 300 and the standard video data without deviation of the alignment are contrasted, to detect the deviation of the alignment of through hole 300 and lower metal line, wherein, standard video data without deviation of the alignment are that the first metal wire 200 is connected with through hole 300 with the longest protruding metal line of the second metal wire 200 ', scanning result when other protruding metal lines are not connected with through hole 300.
Refer to Fig. 4, Fig. 5, Fig. 6 and Fig. 7, specifically, the above-mentioned standard video data without deviation of the alignment be the first metal wire 200 with the longest protruding metal line of the second metal wire 200 ' respectively with its one to one through hole 300 be connected, and the scanning result of other protruding metal lines through hole 300 corresponding with it when not being connected, in other words be shown as bright with the scanning result of through hole 300 corresponding to the longest protruding metal line of the first metal wire 200, be shown as bright with the scanning result of through hole 300 corresponding to the longest protruding metal line of the second metal wire 200 ', the scanning result of through hole 300 corresponding with other protruding metal lines is shown as secretly, as shown in Figure 4.In this enforcement, through hole 300 comprises the deviation of the alignment in positive X-direction and the deviation of the alignment in negative X-direction with the deviation of the alignment of lower metal line.Wherein, the bright dark change of through hole 300 and the deviation of the alignment of the lower metal line through hole 300 that to be positive X-direction or negative X-direction be corresponding to the longest protruding metal line of the first metal wire 200 and the second metal wire 200 ' is determined.Be illustrated in figure 5 through hole 300 and the image data of lower metal line deviation of the alignment in negative X-direction, be illustrated in figure 6 the image data of through hole 300 and lower metal line deviation of the alignment in positive X-direction.Particularly, if the through hole 300 corresponding to the longest protruding metal line of the first metal wire 200 is had the deviation of the alignment in positive X-direction by bright dimmed explanation through hole 300, if the through hole 300 corresponding to the longest protruding metal line of the second metal wire 200 ' is had the deviation of the alignment in negative X-direction by bright dimmed explanation through hole 300.Finally, contrasted by the image data of through hole 300 and standard video data, to count the quantity k of bright dark change through hole 300, then detect with the deviation of the alignment of through hole in line of cut parallel direction 300 with lower metal line.Wherein, when k is the integer being less than 2, described through hole 300 is 0 with lower metal line deviation of the alignment, that is to say and can think that now through hole 300 and lower metal line are without deviation of the alignment; When k is the integer being more than or equal to 2, described through hole 300 is (k-1) * t with lower metal line deviation of the alignment, and wherein t is minimum can be 1nm.
In sum, the detection method of a kind of through hole of the present invention and lower metal line deviation of the alignment, parallel with line of cut by arranging respectively on wafer, be centrosymmetric and disjunct first metal wire and the second metal wire mutually, wherein, first metal wire and the second metal wire have vertically with many protruding metal lines of definite value t increasing or decreasing, scanning between the first metal wire and the second metal wire and with protruding metal line through hole one to one, the image data of through hole and the standard video data without deviation of the alignment are contrasted, accurately to detect the deviation of the alignment of through hole and lower metal line, ensure that precision and the repeatability of integrated circuit fabrication process, and then improve the yield of product.
Above-describedly be only the preferred embodiments of the present invention; described embodiment is also not used to limit scope of patent protection of the present invention; therefore the equivalent variations done of every utilization specification of the present invention and accompanying drawing content, in like manner all should be included in protection scope of the present invention.
Claims (8)
1. a detection method for through hole and lower metal line deviation of the alignment, is characterized in that, comprise the steps:
Step S01, on wafer, arrange first metal wire parallel with line of cut and the second metal wire respectively, described first metal wire and the second metal wire have vertically with the n bar protruding metal line of definite value t increasing or decreasing, wherein, n be greater than 2 integer; Described first metal wire is centrosymmetric with the second metal wire and is not connected mutually;
Step S02, scanning between described first metal wire and the second metal wire and with described protruding metal line through hole one to one, to obtain the image data of described through hole, wherein, when described protruding metal line is connected with through hole, scanning result is shown as bright, and when described protruding metal line is not connected with through hole, scanning result is shown as secretly;
Step S03, the image data of described through hole and the standard video data without deviation of the alignment are contrasted, to detect the deviation of the alignment of described through hole and lower metal line, wherein, the described standard video data without deviation of the alignment are that described first metal wire is connected with through hole with the longest protruding metal line of the second metal wire, scanning result when other protruding metal lines are not connected with through hole.
2. the detection method of a kind of through hole according to claim 1 and lower metal line deviation of the alignment, it is characterized in that, described first metal wire and the second metal wire are also connected to the device of a P type ion well and tungsten contact hole, wherein, described first metal wire and the second metal wire are connected with the contact hole on tungsten contact hole device with described P type ion well.
3. the detection method of a kind of through hole according to claim 1 and lower metal line deviation of the alignment, is characterized in that, the image data of described through hole scans described through hole by sweep electron microscope and realizes.
4. the detection method of a kind of through hole according to claim 1 and lower metal line deviation of the alignment, it is characterized in that, the deviation of the alignment of described through hole and lower metal line comprises the deviation of the alignment in positive X-direction and the deviation of the alignment in negative X-direction, wherein, the bright dark change of the described deviation of the alignment through hole that to be positive X-direction or negative X-direction be corresponding to the longest protruding metal line of described first metal wire and the second metal wire is determined.
5. the detection method of a kind of through hole according to claim 1 and lower metal line deviation of the alignment, is characterized in that, the width range of described protruding metal line is 10nm ~ 50nm.
6. the detection method of a kind of through hole according to claim 1 and lower metal line deviation of the alignment, is characterized in that, the scope of described definite value t is 1 ~ 30nm.
7. the detection method of a kind of through hole according to claim 1 and lower metal line deviation of the alignment, is characterized in that, the image data of described through hole contrasts with the standard video data without deviation of the alignment, to calculate the quantity k of bright dark change through hole.
8. the detection method of a kind of through hole according to claim 7 and lower metal line deviation of the alignment, is characterized in that, when k is the integer being less than 2, described through-hole alignment deviation is 0; When k is the integer being more than or equal to 2, described through hole and lower metal line deviation of the alignment are (k-1) * t.
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| CN1296287A (en) * | 1999-11-05 | 2001-05-23 | 日本电气株式会社 | Device for checking semiconductor device |
| US6288453B1 (en) * | 1998-04-02 | 2001-09-11 | Lsi Logic Corporation | Alignment of openings in semiconductor fabrication |
| US6617180B1 (en) * | 2001-04-16 | 2003-09-09 | Taiwan Semiconductor Manufacturing Company | Test structure for detecting bridging of DRAM capacitors |
| CN102723294A (en) * | 2012-06-20 | 2012-10-10 | 上海华力微电子有限公司 | Method for detecting registration between contact hole and polycrystalline silicon gate |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6774640B2 (en) * | 2002-08-20 | 2004-08-10 | St Assembly Test Services Pte Ltd. | Test coupon pattern design to control multilayer saw singulated plastic ball grid array substrate mis-registration |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6288453B1 (en) * | 1998-04-02 | 2001-09-11 | Lsi Logic Corporation | Alignment of openings in semiconductor fabrication |
| CN1296287A (en) * | 1999-11-05 | 2001-05-23 | 日本电气株式会社 | Device for checking semiconductor device |
| US6617180B1 (en) * | 2001-04-16 | 2003-09-09 | Taiwan Semiconductor Manufacturing Company | Test structure for detecting bridging of DRAM capacitors |
| CN102723294A (en) * | 2012-06-20 | 2012-10-10 | 上海华力微电子有限公司 | Method for detecting registration between contact hole and polycrystalline silicon gate |
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