CN103512596B - 晶片级光电子器件封装及其制造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 230000005693 optoelectronics Effects 0.000 title abstract description 44
- 238000005538 encapsulation Methods 0.000 title description 7
- 239000000463 material Substances 0.000 claims abstract description 93
- 230000003287 optical effect Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000003822 epoxy resin Substances 0.000 claims description 25
- 229920000647 polyepoxide Polymers 0.000 claims description 25
- 229910000679 solder Inorganic materials 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000013459 approach Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 230000006835 compression Effects 0.000 claims description 5
- 238000007906 compression Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims 2
- 239000011230 binding agent Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 239000010949 copper Substances 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000002775 capsule Substances 0.000 description 3
- 238000004040 coloring Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/04—Systems determining the presence of a target
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
- G01S7/4813—Housing arrangements
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/165—Containers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
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- H01L2924/12—Passive devices, e.g. 2 terminal devices
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Abstract
描述了光电子器件(例如,光学接近度传感器)、用于制造光电子器件的方法,以及包括光电子器件的系统。包括光检测器传感器区域的光检测器管芯的光电子器件。光源管芯被附连到光检测器管芯的不包括光检测器传感器区域的部分。在光检测器传感器区域和光源管芯之间形成不透明隔板,透光材料包裹光检测器传感器区域和光源管芯。光源管芯被连接到光检测器管芯,而不是需要连接了光源管芯和光检测器管芯的分开的底基板(例如PCB基板),这样光检测器管芯作为完成的光电子器件的基底。这提供了成本减少并减少了总的封装覆盖区。
Description
技术领域
本申请涉及晶片级光电子器件封装,诸如光学接近度传感器的封装,制造光电子器件封装的方法,和包括光电子器件封装的系统。
背景技术
图1是示例性现有技术的包括被示为已移除的盖子122的光学接近度传感器102的透视图。传感器102包括相互分开且附连到底基板108(例如,印刷电路板(PCB))的光源管芯104和光检测器管芯106。光源管芯104被包裹在清澈环氧树脂114中,而光检测器管芯116被分开地包裹在清澈环氧树脂116中。包住光检测器管芯106的清澈环氧树脂116和包住光源管芯104的清澈环氧树脂118之间有间隙112,其中在盖子122被附连到基板108时,间隙112接受串扰隔板132(其为盖子122的一部分)。可能由金属制成的盖子122包括用于光源管芯104的窗口124和用于光检测器管芯106的分开的窗口126。不透明的串扰隔板132(与盖子122形成整体或附连到盖子122)用于光学地将光源管芯104与光检测器管芯106隔离。
从参考图1描述的示例性现有技术的光学接近度传感器102可以理解,现有的光学接近度传感器的封装包括很多组件和很多工艺步骤,这样增加了材料账单,使制造成本上涨,增加了循环时间,并且导致高的产量损失。
发明内容
以下描述的本发明的各实施例,允许在晶片级执行光学接近度传感器器件(也可被用于环境光感测)的整个工艺过程,从而减少材料账单并提供高产量制造,得到很低成本的解决方案。优选地,最终器件,更通常被称为光电子器件,是关于光检测器管芯它们本身大小的,导致可观的最小化,使得器件很合适手持或其它移动应用。
在下面描述的各实施例中,不需要连接至光源管芯和光检测器管芯的分开的底基板(例如PCB基板)。相反,光源管芯被连接到光检测器管芯,使得光检测器管芯用作已完成的光电子器件的基底。这为其它接近度传感器器件提供了可观的成本减少。此外,这将总的封装覆盖区减小到接近光检测器管芯它本身的那样。
图2是根据本发明的一个实施例的光电子器件202的透视图,它可以是也能够提供环境光感测的光学接近度传感器。如通过讨论图3-6将理解,根据本发明的特定实施例,图2中所示的每个元件或被制造为晶片的部分,或在晶片级处理期间被附连到晶片。
参见图2,示出了光检测器传感器区域206,使用任何已知或未来开发的晶片级器件制作工艺和结构将其形成在晶片的一部分(也被称为光检测器管芯204)内。例如,光检测器传感器区域206可包括重掺杂的N+区域和轻掺杂的P-区域(例如P-外延区),它们都形成在重掺杂的P+或P++基板上。N+区域和P-区域形成一个PN结,更具体地,N+/P-结。当这个PN结例如使用电压源反向偏置时,围绕该PN结形成耗尽区域。当光入射在光检测器传感器区域206上时,在二极管耗尽区中或附近产生电子空穴对。电子立即被拉向N+区,而空穴被向下推向P-区。这些电子(也称为载流子)在N+区中被捕捉并产生指示光的强度的可测量的光电流。这仅仅是光检测器传感器区域206的一个示例性结构,不旨在限制。光检测器传感器区域206替换地可包括P+/N-结或PIN、NPN、PNP或NIP结,但不限于此。此外,注意到光检测器传感器区域206可由多个连接在一起的更小的光检测器传感器区域形成。不考虑光检测器传感器区域206的精确结构,光检测器传感器区域206响应于入射光产生一个指示入射光的信号(例如光电流)。
光检测器传感器区域206由透光材料208覆盖,透光材料208可以是例如透光环氧树脂(例如,透明的或着色的环氧树脂),或其它透光树脂或聚合物。在某些实施例中,透光材料208可具有滤除某些不相关波长的光同时允许相关波长的光通过的颜料或其他性质。光电子器件202也被示为包括包裹在透光材料218内的光源管芯216,其很可能是和透光材料208相同的。
光源管芯216可包括发光元件,该发光元件可以是发光二极管(LED)、有机LED(OLED)、体发光LED、表面发光LED、垂直腔表面发射激光器(VCSEL)、超辐射发光二极管(SLED)、激光二极管或像素二极管,但不仅限于此。光源管芯216包括至少一个阳极触点和一个阴极触点。阳极触点和阴极触点中的一个位于光源管芯216的底部并连接到光检测器管芯204的顶面上的接合焊盘222。阳极触点和阴极触点中的另一个位于光源管芯216的顶面上,并由接合导线224连接到光检测器管芯204的顶面上的接合焊盘。此外,注意到光源管芯216可包括多个连接在一起(例如串联和/或并联)的发光元件。电触点242(例如焊球)形成在光源管芯216的底部。
光检测器管芯204也可包括其它电路,诸如,用于放大由光检测器传感器区域206产生的光电流的放大电路和/或用于选择性地驱动光源管芯216的发光元件的驱动电路。驱动电路也可能可替换地成为光源管芯216的部分,或在管芯204和216之外。
不透明串扰隔板232位于光检测器传感器区域206和光源管芯216之间,从而将光源管芯216的发光元件与光检测器传感器区域206光学隔离。不透明串扰隔板232可由不透明材料形成,不透明材料可以是,例如黑色或其它暗色环氧树脂,或对于光源管芯216生成的光不透光的其它树脂或聚合物。形成不透明串扰隔板232的不透明材料也形成围绕器件202的整个外围的外围隔板234,从而将器件202与可能位于器件202附近的一个或多个其它光电子器件光学地隔离。在特定实施例中,使用黑色焊料掩模材料形成不透明串扰隔板232和外围隔板234。
窗口219位于光检测器传感器区域206之上,且窗口220位于光源管芯216之上。尽管窗口210和220被示为简单孔或开口,但可形成更复杂窗口。
附图说明
图1是示例性现有技术的包括被示为已移除的盖子的光学接近度传感器的透视图。
图2是根据本发明的一个实施例的光电子器件的透视图,它可以是也能够提供环境光感测的光学接近度传感器。
图3,包括截面图3(a)-3(i),被用于示出根据本发明特定实施例的光电子器件的制造。
图4,包括截面图4(a)-4(j),被用于示出根据本发明替换实施例的光电子器件的制造。
图5包括用于示出根据特定实施例,透镜(例如气泡透镜)可被形成在光检测器传感器区域和/或光源管芯之上的截面。
图6A示出了根据本发明的实施例的光电子器件的俯视图。图6B示出了图6A的光电子器件的移除了光源管芯的俯视图。图6C示出了图6A的光电子器件的仰视图。
图7是用于示出根据特定实施例,可执行切割使得传感器阵列被包括在单个封装中。
图8A和8B是用于概括根据本发明的各实施例的光电子器件制造方法的高级流程图。
图9是根据本发明一个实施例的系统的高级方框图。
具体实施方式
图3,包括截面图3(a)-3(i),被用于示出根据本发明特定实施例的光电子器件(更具体地,多个这样的器件)的制造。例如,参考图3描述的工艺可被用来生产前面参考图2描述的光电子器件202。
参考图3(a),多个光检测器传感器区域306被示为形成在硅晶片304中。执行穿硅孔(TSV)工艺来形成孔308,孔308将在连接到晶片304的顶部的元件和在晶片被背部研磨后将形成在晶片的底部的电触点(例如焊球)之间提供电连接。例如,带有等离子蚀刻的标准TSV工艺可被用来形成到晶片304的部分深度的开口(钻孔)。部分深度TSV工艺可在CMOS器件制造的初始阶段或最后阶段执行。在此阶段没有塑料材料沉积在晶片上。因此,可执行铜(Cu)引晶、Cu镀、孔填充和化学机械抛光/平坦化(CMP),而没有工艺约束。
参见图3(b),多个光源管芯316被连接到晶片304的顶面上的接合焊盘。例如,晶片304可被加载到管芯附连机器并由晶片保持器保持在位。光源管芯316可使用例如导电环氧树脂(诸如但不限于银(Ag)环氧树脂)来附连。这将把每个光源管芯316的发光元件的阳极或阴极连接到晶片304的顶面的相应接合焊盘上。晶片随后通过烘烤工艺来固化导电环氧树脂(例如Ag环氧树脂)。
参见图3(c),接着使用晶片级接合机器来将来自每个光源管芯316的发光元件的其它端子(例如,阴极或阳极)的接合导线324连接到晶片304上的相应接合焊盘上。接合导线324可用例如银(Ag)或铜(Cu)制成,但不限于此。
参见图3(d),晶片304的顶面和连接其上的元件,包括光源管芯316和接合导线324被包裹在透光材料318中。光检测器传感器区域306也被包裹在透光材料318中。透光材料318可以是,例如,透光环氧树脂(例如,透明的或着色的环氧树脂)或其他透光树脂或聚合物。根据特定实施例,透光材料318是使用焊料掩模沉积设备施予的清澈焊料掩模材料。根据替换实施例,透光材料318(例如清澈环氧树脂)是使用具有或没有真空辅助的液体压缩模制形成的。
参考图3(e),在透光包裹材料318中形成槽312以将被包裹的光检测器传感器区域306与邻近的被包裹的光源管芯316分开。根据特定实施例,使用光刻来形成槽312。根据其它实施例,槽312,例如使用锯或激光来切割。
参见图3(f),在剩余的透光材料318上和参考图3(e)讨论的槽312内施予不透明材料330。使用不透明材料330来(在每个光检测器传感器区域306及其邻近光源管芯316之间)形成串扰隔板和外围隔板,其目的上面参考图2中的元件232和234已被讨论。不透明材料330可以是,例如,黑色或其他暗色的环氧树脂,或对由光源管芯316所生成的光不透光的其他树脂或聚合物。在特定实施例中,不透明材料是使用焊料掩模印刷施予的黑色焊料掩模材料。
在形成透光材料和形成不透明隔板的晶片级工艺之后,可例如使用基于丙烯酸的粘合剂将晶片附连到晶片支持系统。晶片支持系统将帮助阻止扭曲并帮助保护透光材料318和隔板防止温度漂移。
参见图3(g),形成用于光检测器传感器区域306的窗口310,形成用于光源管芯316的窗口320。根据特定实施例,这些窗口310、320(亦可被称为孔)可通过使用光刻移除不透明材料330(例如,黑焊料掩膜材料)的部分来形成。
参见图3(h),在窗口已经形成之后,执行晶片背部研磨、孔插入和底部焊盘制造。晶片背部研磨将晶片304打薄到其最终希望的厚度,并且暴露TVS孔。例如,晶片开始可具有30密耳厚度,而在背部研磨后最后具有5密耳厚度。这显著地减少了最终器件的厚度。
在背部研磨以打薄晶片并露出TSV孔之后,低温Ti-1kA和Cu-2kA例如在小于110摄氏度的温度下可被沉积为种子层。随后可通过电镀方法沉积CuNiAu以创建外部触点(例如焊球)附连的底输入/输出(I/O)。最好选择耐受240-250摄氏度的峰值回流温度的不透明材料(例如,焊料掩模)和透光材料(例如清澈环氧树脂)。
参见图3(i),示出焊球342被安装在晶片304的底部。更具体地,晶片304可经受磁通印刷,焊球附连和回流以在晶片304的底部产生焊球端子。代替焊球使用替代的触点也在本发明的范围之内。例如,可使用导电焊区、焊盘,或桩。可向晶片304的底部添加激光标记。
仍然参见图3(i),接着晶片被机械切割(例如锯)以单片化每个光电子器件。根据一个实施例,在切割之后,器件继续附连在用来安装晶片的带媒体(例如,麦拉(Mylar)带)上。可接着使用电测试器(例如具有探针的测试器)测试已单片化的晶片以检查各器件是否运行良好。可替换地,可在切割前执行测试。已单片化的器件随后可被加载到拾取和放置机器,该拾取和放置机器拾取(经测试确定)运行良好的器件并将它们放置到带中并卷绕包装,在那里它们准备好被装运至顾客。
图4,包括截面图4(a)-4(j),被用于示出根据本发明替换实施例的光电子器件(更具体地,多个这样的器件)的制造。图4(a)-4(c)与图3(a)-3(c)一致,并且因此,无需再次描述。
参见图4(d),晶片304的顶面和连接其上的元件,包括光源管芯316和接合导线324被包裹在不透明材料330中。在特定实施例中,不透明材料是使用焊料掩模印刷施予的黑色焊料掩模材料。
参见图4(e),光刻被用来移除不透明材料330的覆盖光检测器传感器区域306和光源管芯316的部分,使得余下的不透明材料330(在每个光检测器传感器区域306及其邻近光源管芯316之间)形成串扰隔板和外围隔板。
参见图4(f),接着使用透光材料318来覆盖并包裹光检测器传感器区域306、光源管芯316和接合导线324。如上所述,透光材料318可以是,例如,透光环氧树脂(例如,透明的或着色的环氧树脂)或其他透光树脂或聚合物。根据特定实施例,使用液体压缩模制来模制透光材料318(例如,清澈环氧树脂)。
参见图4(g),接着(例如,使用黑色焊料掩模印刷)施予附加的不透明材料330。
图4(h)-4(j)与图3(g)-3(i)一致,并且因此,无需再次描述。
在特定实施例中,透镜,例如气泡透镜,可形成在光检测器传感器区域和/或光源管芯之上,如从图5可以理解。参见图5,例如使用透光材料318(例如清澈环氧树脂)的液体压缩模制可形成这样的透镜526。每个光源管芯上的透镜被用来聚焦从该光源管芯发射的光。每个光检测器传感器区域上的透镜被用来聚焦入射在透镜上的光(反射的和/或环境光)。
在上面描述的各实施例中,不需要连接至光源管芯和光检测器管芯的分开的底基板(例如PCB基板)。相反,光源管芯被连接到光检测器管芯,使得光检测器管芯用作已完成的光电子器件的基底。这为其它接近度传感器器件提供了可观的成本减少。此外,这将总的封装覆盖区减小到接近光检测器管芯它本身的那样。所得的光电子器件可被用于接近度检测,以及环境光检测。
根据上面描述的各特定实施例,每个光接近度传感器器件仅需要单个接合导线。其余电连接由孔路由到管芯的背面并以焊球或其它外部连接结束。这允许封装最小化。此外,如果用于生产接合导线的商品(诸如银(Ag)或铜(Cu))价格升高,材料账单更少倾向于增加。
使用晶片级液体压缩模制或清澈焊料沉积的实施例提供了可观的优于转移模制(通常被用来制作其它接近度传感器器件)的成本节约。
对于使用黑色焊料掩模印刷形成不透明隔板(光源管芯和光检测器传感器区域之间的串扰隔板和外围隔板)的那些实施例,这样的晶片级工艺允许高精确度和高产量,提供了成本节约。
在特定实施例中,使用晶片级芯片级封装(CSP)形成光电子器件的元件,其提供广泛的最小化。
图6A示出了根据本发明的实施例的光电子器件的俯视图。图6B示出了图6A的光电子器件的移除了光源管芯的俯视图。图6B示出了图6A的光电子器件的仰视图。
根据特定实施例,可替代地执行切割使得这样的传感器阵列被包括在单个封装中,而不是执行切割使得所得器件仅包括单个接近度传感器,这可从图7理解。更具体地,图7示出了在一个封装702中的四个光电子器件的阵列,光源管芯被分开成相互邻近的两个光电子器件的阵列704,以及光源管芯被分开成相互远离的两个光电子器件的阵列706。其它配置也是可能的。
图8A和8B是用于概括根据本发明的各实施例的制造多个光电子器件的方法的高级流程图。图8A的流程图对应于上面参考图3描述的工艺。图8B的流程图对应于上面参考图4描述的工艺。在图8A和8B中步骤802、804和806,814、816、818和820相同。图8A中的步骤808a、810a和812a不同于图8B中的808b、809b、810b和812b。
参见图8A,在步骤802,在包括多个光检测器传感器区域的晶片上执行穿硅孔(TSV)工艺,从而形成多个部分深度的孔。在步骤804,光源管芯的每个被附连到晶片顶面上的分开的接合焊盘上。在步骤806,对于多个光源管芯的每一个,接合导线从光源管芯的顶部附连到晶片顶面上的又一个分开的接合焊盘。在步骤808a,光检测器传感器区域、光源管芯和接合导线被包裹在诸如清澈环氧树脂的透光材料中。在步骤810a,在透光材料中在光检测器传感器区域和邻近的光源管芯之间形成槽。在步骤812a,槽被填充且透光材料被不透明材料覆盖以形成串扰隔板和外围隔板。该不透明材料可以是例如,不透明焊料掩模材料,但是不限于此。在步骤814,在光检测器传感器区域和光源管芯之上打开孔。在步骤816,在晶片底部执行背部研磨以获得晶片的特定厚度。在步骤818,焊球或其它电连接被安装到晶片的底部。在步骤820,执行晶片切割以将晶片分成多个光电子器件,每个光电子器件包括光检测器传感器区域的至少一个以及光源管芯的至少一个。
现在参见图8B,在步骤802,在包括多个光检测器传感器区域的晶片上执行TSV工艺,从而形成多个部分深度的孔。在步骤804,光源管芯的每个被附连到晶片顶面上的分开的接合焊盘上。在步骤806,对于多个光源管芯的每一个,接合导线从光源管芯的顶部附连到晶片顶面上的又一个分开的接合焊盘。在步骤808b,光检测器传感器区域、光源管芯和接合导线被包裹在不透明材料中。在步骤809b,覆盖光检测器传感器区域、光源管芯和接合导线的部分不透明材料被移除,并留下在光检测器传感器区域和邻近的光源管芯之间的部分不透明材料,从而形成串扰隔板和外围隔板。在步骤810b,光检测器传感器区域、光源管芯和接合导线被包裹在透光材料中。在步骤812b,透光材料被不透明材料覆盖。在步骤814,在光检测器传感器区域和光源管芯之上打开孔。在步骤816,在晶片底部执行背部研磨以获得晶片的特定厚度。在步骤818,焊球或其它电连接被安装到晶片的底部。在步骤820,执行晶片切割以将晶片分成多个光电子器件,每个光电子器件包括光检测器传感器区域的至少一个以及光源管芯的至少一个。
参考图8A和8B描述的方法的附加细节可以从上面对图2-4的讨论中理解。
本发明各实施例的光电子器件可被用在各种系统中,包括,但不限于,移动电话和其它手持设备。参考图9的系统900,例如,光电子器件902(例如,202)可以被用来控制子系统906(例如,触摸屏、背光、虚拟滚动轮、虚拟小键盘、导航板等等)是否被启用或禁用。例如,光电子器件902可以检测诸如人的手指之类的对象908何时正在接近,并基于检测而启用或者禁用子系统906。更具体地,驱动器903选择性地驱动光电子器件902的光源管芯(例如216),从而导致光源管芯发射从对象908反射的光。驱动器903可在器件902外部,如所示,或者是器件902的部分(例如,器件902的管芯之一的部分)。由光电子器件902的光源管芯的光检测器传感器区域(例如306)检测所反射的光的部分。光电子器件902的输出被提供给比较器或处理器904,其可将光电子器件902的输出与一个阈值进行比较,以确定对象908是否处在子系统906应该被启用或禁用(取决于期望的是什么)的一范围内。可使用多个阈值,且基于检测到的对象908的接近度可出现一种以上的可能响应。例如,如果对象908在第一接近度范围内则出现第一响应,而如果该对象8在第二接近度范围内则出现第二响应。在系统900中,光电子器件902被用来检测对象908的接近度,并且因此器件902也可被称为光学接近度传感器。
上述描述是本发明的优选实施例。出于说明和描述目的提供这些实施例,但它们不旨在穷举或将本发明限制在所公开的精确形式。许多改型和变化对本领域内技术人员而言是明显的。这些实施例的选择和描述是为了最好地阐述本发明的原理及其实践应用,由此使本领域内技术人员理解本发明。
尽管上文描述了本发明的各实施例,但是,应该理解,它们只是作为示例来呈现的,而不作为限制。对那些精通本技术的人员显而易见的是,在不偏离本发明的精神和范围的情况下,可以对形式和细节进行各种更改。
本发明的宽度和范围不应该受到上面描述的示例性实施例中的任何一个的限制,而只应根据下面的权利要求和它们的等效物进行定义。
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Claims (20)
1.一种光学接近度传感器,包括:
光检测器管芯,具有顶面,所述顶面包括光检测器传感器区域以及所述光检测器管芯的顶面的不包括所述光检测器传感器区域的部分上的接合焊盘,所述光检测器管芯也包括底面;
光源管芯,具有底面,所述底面附连到所述光检测器管芯的顶面的不包括所述光检测器传感器区域的部分,使得所述光源管芯的底面与所述光检测器管芯的顶面基本上共面,其中,所述光源管芯的底面上的端子通过导电粘合剂附连到所述光检测器管芯的顶面上的接合焊盘;以及
不透明隔板,形成在所述光检测器管芯的顶面上且从所述顶面向上延伸并且在所述光检测器传感器区域和所述光源管芯之间,使得与所述光检测器传感器区域相比整个光源管芯是在所述不透明隔板的相反一侧;
所述不透明隔板是晶片级不透明隔板并且具有相对于所述光检测器管芯的顶面的高度,该高度大于所述光源管芯的底面与所述光源管芯的顶面之间的厚度;
焊球或其它电连接器,用于所述光检测器传感器区域和所述光源管芯,附连到所述光检测器管芯的底面;以及
在所述光检测器管芯中的孔,所述孔将所述光检测器传感器区域和所述光源管芯的端子电连接到附连到所述光检测器管芯的底面的各相应的焊球或其它电连接器。
2.如权利要求1所述的光学接近度传感器,其特征在于,所述光检测器管芯为所述光源管芯和所述晶片级不透明隔板提供底基板,从而消除了对连接所述光源管芯和所述光检测器管芯且支撑不透明隔板于其间的分开的底基板的需求;以及
所述光学接近度传感器的所有的焊球或其它电连接器附连到所述光检测器管芯的底面,由此消除了对附连光学接近度传感器的焊球或其它电连接器的分开的基板的需求。
3.如权利要求1所述的光学接近度传感器,其特征在于,还包括:
包裹所述光检测器传感器区域和所述光源管芯的晶片级透光材料。
4.如权利要求3所述的光学接近度传感器,其特征在于:
用不透明材料形成不透明隔板;
所述透光材料包括清澈环氧树脂;以及
所述不透明材料包括不透明焊料掩模材料。
5.如权利要求1所述的光学接近度传感器,其特征在于,所述光学接近度传感器被用于检测一物体相对于所述光学接近度传感器的接近度。
6.如权利要求1所述的光学接近度传感器,其特征在于,所述光源管芯的端子包括在所述光源管芯的底面上的端子和在所述光源管芯的顶面上的端子,其中,附连所述光源管芯的底面上的端子的接合焊盘包括第一接合焊盘,所述光学接近度传感器还包括:
在所述光检测器管芯的顶面上的不包括所述光检测器传感器区域的部分上的第二接合焊盘;以及
接合导线,所述接合导线将所述光源管芯的顶面上的端子电连接到所述光检测器管芯的顶面上的不包括所述光检测器传感器区域的部分上的第二接合焊盘;以及
其中,在所述光检测器管芯中的孔包括第一和第二孔,用于将第一和第二接合焊盘分别电连接到附连到所述光检测器管芯的底面的焊球或其它电连接器中的相应的第一和第二焊球或其它电连接器,由此将所述光源管芯的底面和顶面上的端子电连接到附连到所述光检测器管芯的底面的焊球或其它电连接器中的相应的第一和第二焊球或其它电连接器。
7.一种用于制造多个光学接近度传感器的方法,包括:
在包括多个光检测器传感器区域的晶片上执行穿硅孔TSV工艺,以形成多个部分深度的孔;
将多个光源管芯的每一个附连到所述晶片的顶面上的分开的接合焊盘;
对于所述多个光源管芯的每一个,将接合导线从所述光源管芯的顶部附连到所述晶片的顶面上的又一个分开的接合焊盘;
将所述光检测器传感器区域、所述光源管芯和所述接合导线包裹在透光材料中;
在所述透光材料中所述光检测器传感器区域和邻近光源管芯之间形成槽;
填充所述槽,并用不透明材料覆盖所述透光材料以形成串扰隔板和外围隔板;
在所述光检测器传感器区域和所述光源管芯之上打开孔;
对所述晶片的底部进行背部研磨以获得所述晶片的特定厚度;
将焊球或其它电连接安装到所述晶片的底部;以及
切割所述晶片以将所述晶片分成多个光学接近度传感器,每个光学接近度传感器包括光检测器传感器区域的至少一个以及光源管芯的至少一个。
8.如权利要求7所述的方法,其特征在于:
所述透光材料包括清澈环氧树脂;以及
所述不透明材料包括不透明焊料掩模材料。
9.如权利要求7所述的方法,其特征在于,包裹是使用液体压缩模制或使用清澈焊料掩模沉积来执行的。
10.一种用于制造多个光学接近度传感器的方法,包括:
在包括多个光检测器传感器区域的晶片上执行穿硅孔TSV工艺,以形成多个部分深度的孔;
将多个光源管芯的每一个附连到所述晶片的顶面上的分开的接合焊盘;以及
对于所述多个光源管芯的每一个,将接合导线从所述光源管芯的顶部附连到所述晶片的顶面上的又一个分开的接合焊盘;
将所述光检测器传感器区域、所述光源管芯和所述接合导线包裹在不透明材料中;
移除覆盖所述光检测器传感器区域、所述光源管芯和所述接合导线的部分不透明材料,并留下在所述光检测器传感器区域和邻近的光源管芯之间的部分所述不透明材料,从而形成串扰隔板和外围隔板;
将所述光检测器传感器区域、所述光源管芯和所述接合导线包裹在透光材料中;
用不透明材料覆盖所述透光材料;
在所述光检测器传感器区域和所述光源管芯之上打开孔;
对所述晶片的底部进行背部研磨以获得所述晶片的特定厚度;
将焊球或其它电连接安装到所述晶片的底部;以及
切割晶片以将所述晶片分成多个光学接近度传感器,每个光学接近度传感器包括光检测器传感器区域的至少一个以及光源管芯的至少一个。
11.如权利要求10所述的方法,其特征在于:
所述透光材料包括清澈环氧树脂;以及
所述不透明材料包括不透明焊料掩模材料。
12.如权利要求10所述的方法,其特征在于,将所述光检测器传感器区域、所述光源管芯和所述接合导线包裹在不透明材料中是使用不透明焊料掩模沉积执行的。
13.如权利要求10所述的方法,其特征在于,将所述光检测器传感器区域、所述光源管芯和所述接合导线包裹在透光材料中是使用液体压缩模制执行的。
14.如权利要求10所述的方法,其特征在于,所述移除和打开是使用光刻执行的。
15.一种系统,包括:
如权利要求1所述的光学接近度传感器;
被配置成选择性地驱动所述光学接近度传感器的光源管芯的驱动器;
配置用于将由所述光学接近度传感器的光检测器管芯生成的指示入射在所述光检测器传感器区域上的光的信号与一个或多个阈值进行比较的处理器或比较器;以及
由所述处理器或比较器响应于由所述光检测器管芯生成的信号来控制的子系统。
16.如权利要求15所述的系统,其特征在于,还包括:
包裹所述光检测器传感器区域和所述光源管芯的透光材料。
17.如权利要求16所述的系统,其特征在于:
所述透光材料包括清澈环氧树脂;以及
所述不透明隔板是用不透明焊料掩模材料制成的。
18.如权利要求15所述的系统,其特征在于,所述子系统包括触摸屏、背光、虚拟滚动轮、虚拟小键盘、或导航板之一。
19.一种用于制造光学接近度传感器的方法,包括:
在包括光检测器传感器区域的晶片上执行穿硅孔TSV工艺,以形成一个或多个部分深度的孔;
将光源管芯附连到所述晶片的顶面上的接合焊盘;
将接合导线从所述光源管芯的顶部附连到所述晶片的顶面上的又一个分开的接合焊盘;
将所述光检测器传感器区域、所述光源管芯和所述接合导线包裹在透光材料中;
在所述透光材料中所述光检测器传感器区域和光源管芯之间形成槽;
填充所述槽,并用不透明材料覆盖所述透光材料以形成串扰隔板;
在所述光检测器传感器区域和所述光源管芯之上打开孔;
对所述晶片的底部进行背部研磨以获得所述晶片的特定厚度;以及
将电连接安装到所述晶片的底部。
20.一种用于制造光学接近度传感器的方法,包括:
在包括光检测器传感器区域的晶片上执行穿硅孔TSV工艺,以形成一个或多个部分深度的孔;
将光源管芯附连到所述晶片的顶面上的接合焊盘;
将接合导线从所述光源管芯的顶部附连到所述晶片的顶面上的又一个分开的接合焊盘;
将所述光检测器传感器区域、所述光源管芯和所述接合导线包裹在不透明材料中;
移除覆盖所述光检测器传感器区域和所述光源管芯的部分不透明材料,并留下在所述光检测器传感器区域和光源管芯之间的部分所述不透明材料,从而形成串扰隔板;
将所述光检测器传感器区域和所述光源管芯包裹在透光材料中;
用不透明材料覆盖所述透光材料;
在所述光检测器传感器区域和所述光源管芯之上打开孔;
对所述晶片的底部进行背部研磨以获得所述晶片的特定厚度;以及
将电连接安装到所述晶片的底部。
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Also Published As
Publication number | Publication date |
---|---|
US9570649B2 (en) | 2017-02-14 |
US20130334445A1 (en) | 2013-12-19 |
TWI651861B (zh) | 2019-02-21 |
TW201707218A (zh) | 2017-02-16 |
TWI562388B (en) | 2016-12-11 |
TW201401528A (zh) | 2014-01-01 |
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US20150207016A1 (en) | 2015-07-23 |
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