CN103489903A - Trench IGBT and manufacturing method thereof - Google Patents
Trench IGBT and manufacturing method thereof Download PDFInfo
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- CN103489903A CN103489903A CN201210191750.2A CN201210191750A CN103489903A CN 103489903 A CN103489903 A CN 103489903A CN 201210191750 A CN201210191750 A CN 201210191750A CN 103489903 A CN103489903 A CN 103489903A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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Abstract
The invention provides a Trench IGBT and a method for manufacturing the Trench IGBT. A Schottky contact structure is adopted in the Trench IGBT, and the conductivity voltage drop of the Trench IGBT is reduced. The Trench IGBT comprises a gate oxide layer, a Pbody voltage withstanding area, and an N-type low-adulteration substrate base area, a metallization cathode and a Schottky contact layer which is located between the gate oxide layer and the Pbody voltage withstanding area and is in contact with the N-type low-adulteration substrate base area and the metallization cathode. The method for manufacturing the Trench IGBT comprises the steps that after the Pbody voltage withstanding area and the gate oxide layer are formed on the N-type low-adulteration substrate base area, the Schottky contact layer is formed on the N-type low-adulteration substrate base area between the gate oxide layer and the Pbody voltage withstanding area; the metallization cathode is formed on the Schottky contact layer.
Description
Technical field
The present invention relates to electronic technology field, relate in particular to a kind of channel-type insulated gate bipolar transistor and manufacture method thereof.
Background technology
Trench IGBT(Trench Insulated Gate Bipolar Transistor, channel-type insulated gate bipolar transistor) appearance, compare reliability and strengthen with common IGBT, reduce the parasitic thyristor effect.The channel-type IGBT that accumulation layer is controlled has than conventional IGBT and has larger advantage, its structure as shown in Figure 1, comprising metallization anode 11, P type heavily doped region anode 12, N-type light dope substrate base 13, gate oxide 14, gate electrode 15, metallization negative electrode 16, N-type heavily doped region 17, Pbody withstand voltage zone 18.
Existing Trench IGBT carrys out the blocking-up of control device by the electronic barrier of the internal electric field formation of the heavy doping of positive P type and N-type light dope knot, form by additional grid voltage the normal operation that the accumulation layer raceway groove carrys out control device, greatly reduced the parasitic thyristor effect in traditional insulated gate bipolar transistor structure, the safety operation area of device, reliability and hot operation characteristic are all significantly promoted, compare and can obtain lower conduction voltage drop, larger saturation current density with common IGBT.Simultaneously, due to the effect of accumulation layer, make the injection efficiency of emitter electronics greatly strengthen, optimized the carrier concentration profile in N-type light dope base, can realize between conduction voltage drop and turn-off power loss better compromise.
Although the existence of accumulation layer raceway groove has reduced the conduction voltage drop of accumulation layer channel-type IGBT, what can't make the conduction voltage drop of accumulation layer channel-type IGBT fall is lower.
Summary of the invention
The invention provides a kind of channel-type insulated gate bipolar transistor and manufacture method thereof, this channel-type insulated gate bipolar transistor is with respect to existing channel-type insulated gate bipolar transistor, and conduction voltage drop decreases.
A kind of road type insulated gate bipolar transistor Trench IGBT provided by the invention, described Trench IGBT comprises gate oxide, Pbody withstand voltage zone, the low-doped substrate of N-type base, metallization negative electrode and schottky contact layer;
Described schottky contact layer contacts with gate oxide, Pbody withstand voltage zone, the low-doped substrate of N-type base and metallization negative electrode.
Do not comprise the N-type heavily doped region between described Pbody withstand voltage zone and metallization negative electrode.
Described gate oxide does not contact with the Pbody withstand voltage zone, and the channel region between gate oxide and Pbody withstand voltage zone is filled with the low-doped substrate of N-type base.
Described schottky contact layer is arranged in described channel region.
The present invention also provides the method for manufacturing above-mentioned channel-type insulated gate bipolar transistor Trench IGBT, and the method comprises:
Form Pbody withstand voltage zone and gate oxide on the low-doped substrate of N-type base after, on the low-doped substrate of the N-type base between gate oxide and Pbody withstand voltage zone, form schottky contact layer, described schottky contact layer contacts with the Pbody withstand voltage zone with gate oxide;
Form the metallization negative electrode on schottky contact layer.
Described method also comprises:
Form the metallization negative electrode at gate oxide and Pbody withstand voltage zone when forming the metallization negative electrode on schottky contact layer.
Describedly form the Pbody withstand voltage zone and gate oxide comprises on the low-doped substrate of N-type base:
Take trench structure on the low-doped substrate of N-type base;
Pbody withstand voltage zone and gate oxide are formed at respectively at least two disconnected grooves on the low-doped substrate of N-type base.
The method of described formation schottky contact layer is to form the Schottky hole on the low-doped substrate of the N-type between Pbody withstand voltage zone and gate oxide.
The Trench IGBT that the embodiment of the present invention provides, have schottky contact layer, and described schottky contact layer contacts with the Pbody withstand voltage zone with gate oxide, and contact with the metallization negative electrode with the N-type doped regions.The introducing of Schottky barrier, significantly reduced the break-over of device pressure drop, and because schottky contact layer has replaced the N-type heavily doped region contacted with the metallization negative electrode with the N-type doped regions before, while voltage being provided to Trench IGBT, reduced this regional electron concentration, make the saturation current density of device decrease, the performance of short circuit safety operation area is significantly improved.
The accompanying drawing explanation
Fig. 1 is existing Trench IGBT structural representation;
Fig. 2 is Trench IGBT example structure schematic diagram of the present invention;
Fig. 3 is the embodiment of the method flow chart that the present invention makes Trench IGBT;
Fig. 4 is that the present invention makes the embodiment flow chart that Trench IGBT forms raceway groove;
Fig. 5 is the concrete grammar embodiment flow chart that the present invention makes Trench IGBT.
Embodiment
Trench IGBT provided by the invention compares with existing Trench IGBT, and conduction voltage drop has had reduction by a relatively large margin.
Below in conjunction with accompanying drawing, the Trench IGBT structure in the embodiment of the present invention is described.As shown in Figure 2, the Trench IGBT in the present embodiment comprises: metallization anode 21, P type heavily doped region 22, the low-doped substrate of N-type base 23, gate oxide 24, gate electrode 25, metallization negative electrode 26, cathodic metal schottky contact layer 27 and Pbody withstand voltage zone 28.
Wherein, P type heavily doped region 22 contacts with metallization anode 21, the low-doped substrate of N-type base 23 contacts with P type heavily doped region 22, gate oxide 24 contacts with the low-doped substrate of N-type base 23, gate electrode 25 contacts with gate oxide 24, Pbody withstand voltage zone 28 contacts with the low-doped substrate of N-type base 23, and schottky contact layer 27 contacts with Pbody withstand voltage zone 28 with gate oxide 24, with the low-doped substrate of N-type base 23, with metallization negative electrode 26, also contacts.
The material of gate oxide 24 can be silicon dioxide, and the material of gate electrode 25 is polysilicon.The material of the low-doped substrate of N-type base 23 and P type heavily doped region 22 and Pbody withstand voltage zone 28 should be semiconductor, can be silicon, also can use the semiconductors such as carborundum, GaAs, indium phosphide or SiGe to replace.
Trench IGBT as shown in Figure 2, be followed successively by metallization anode 21, P type heavily doped region 22, the low-doped substrate of N-type base 23 from the bottom up.Also have gate oxide 24 and Pbody withstand voltage zone 28 above the low-doped substrate of N-type base 23, and gate oxide 24 parcel gate electrodes 25.Be channel-like between gate oxide 24 and Pbody withstand voltage zone 28, be filled with the low-doped substrate of N-type in raceway groove.
Adopt plane contact between metallization anode 21 in the present embodiment, P type heavily doped region 22 and the low-doped substrate of N-type base 23, and form raceway groove between Pbody withstand voltage zone 28 and gate oxide 24.
When the Trench IGBT in the present embodiment works, with between metallization negative electrode and the low-doped substrate of N-type base, be to compare in other Trench IGBT of N-type heavily doped region, former N-type heavily doped region between metallization negative electrode 26 and the low-doped substrate of N-type base 23 is replaced by Schottky contacts.
Conduction voltage drop while being other Trench IGBT work of N-type heavily doped region between metallization negative electrode and the low-doped substrate of N-type base is comprised of several parts, it is most important that two parts are wherein arranged, the one, the pressure drop part of the low-doped substrate of N-type base, the 2nd, the pressure drop part of raceway groove.Trench IGBT in the present embodiment, replaced the N-type heavily doped region by Schottky contacts, the conduction voltage drop of the structure of this similar diode from top to bottom namely, just the conduction voltage drop of PN junction has become the Schottky conduction voltage drop, and the Schottky contacts conduction voltage drop is than more than low at least 0.2 volt of common PN junction conduction voltage drop, therefore conduction voltage drop is whole, descend, the two is identical for the pressure drop part in the low-doped substrate of N-type zone, so overall, descends.And, because the Pbody withstand voltage zone does not contact with raceway groove, concentration when during low withstand voltage work, raceway groove concentration ratio Pbody contacts with raceway groove wants high, has therefore reduced the pressure drop of raceway groove.In sum, the conduction voltage drop of the Trench IGBT in the present embodiment decreases than the conduction voltage drop of other Trench IGBT, is applicable to the situation of the lower conduction voltage drop of needs.
And, Trench IGBT in the present embodiment is owing to having used Schottky contacts to make the conduction voltage drop of self decrease, therefore between metallization negative electrode and the low-doped substrate of N-type base, be in other Trench IGBT of N-type heavily doped region, the reduction gate oxide thickness originally adopted can be substituted with the means that reduce Trench IGBT conduction voltage drop.So, in the present embodiment, used the thickness of gate oxide of the Trench IGBT of Schottky contacts to increase.And, because the thickness of the gate oxide in the present embodiment increases to some extent, make after gate voltage is opened, the electron accumulation of the semiconductor surface under gate oxide is more, has improved the current density in Trench IGBT.And the Pbody district in the present embodiment is actual, for can making the zone between Pbody district and gate oxide in Trench IGBT, P type heavily doped region ，Gai district just can turn-off under very little reverse voltage.
For the reliability that makes Trench IGBT is higher, in the present embodiment, between the Pbody withstand voltage zone of Trench IGBT and metallization negative electrode, do not comprise the N-type heavily doped region.After having removed the N-type heavily doped region between Pbody withstand voltage zone and metallization negative electrode, can strengthen the ability to bear of Pbody district to reverse voltage, because former Pbody district needs the part loss of self with the electronics in balance N-type heavily doped region, and after having cancelled the N-type heavily doped region, the Pbody district can be fully for bearing reverse voltage, therefore larger to the ability to bear of direction voltage.And the removal of N-type heavily doped region, also eliminated the parasitic thyristor effect that the Trench of N-type heavily doped region IGBT is arranged, so that the Trench IGBT in the present embodiment is more reliable.
More preferably, gate oxide does not contact with the Pbody withstand voltage zone, and the channel region between gate oxide and Pbody withstand voltage zone is filled with the low-doped substrate of N-type base.Owing between gate oxide and Pbody withstand voltage zone, raceway groove being arranged, the depletion layer in Pbody district can be expanded to surrounding, and this depletion layer and gate oxide can be connected to form the Built-in potential field, when Trench IGBT does not work, this electric potential field meeting pinch off raceway groove, prevent that short circuit from appearring in negative electrode and anode, and when connecting reverse voltage, the increase of reverse voltage can make depletion layer to the metallization anode extension, it is not breakdown so that the Trench IGBT in the present embodiment can bear very large reverse voltage, such Trench IGBT also makes Leakage Current very little, also can be as short as for tens nanoseconds reverse recovery time.
When applying the forward voltage with respect to the metallization negative electrode to the metallization anode, a large amount of electrons form charge carrier at the surface aggregation of gate oxide, so originally, by the raceway groove conducting of pinch off, originally the depletion layer that in Pbody withstand voltage zone, the heavy doping of P type forms become the N-type zone, just conducting of whole like this Trench IGBT.
The Trench IGBT that the present embodiment provides, owing to combining schottkybarrier structure and channel structure, has reduced conduction voltage drop significantly, has reduced conduction loss, has also optimized the reliability of device simultaneously.
The present invention also provides the manufacture method of the Trench IGBT in above-described embodiment, below in conjunction with accompanying drawing, embodiment of the method for the present invention is described.
As shown in Figure 3, Trench IGBT manufacture method embodiment of the present invention comprises:
Step S301 forms Pbody withstand voltage zone and gate oxide on the low-doped substrate of N-type base.
Step S302 forms schottky contact layer on the low-doped substrate of the N-type base between gate oxide and Pbody withstand voltage zone.Schottky contact layer contacts with the Pbody withstand voltage zone with gate oxide.
Step S303 forms the metallization negative electrode on schottky contact layer.
Form schottky contact layer in step S302 on the low-doped substrate of the N-type base between gate oxide and Pbody withstand voltage zone, form again the metallization negative electrode on the schottky contact layer formed, schottky contact layer can contact with the Pbody withstand voltage zone with gate oxide, with the low-doped substrate of N-type base, with the metallization negative electrode, contacts.
Also can on gate oxide, form the N-type heavily doped region at the formation gate oxide, after forming the metallization negative electrode, between metallization negative electrode and metallization negative electrode, one deck N-type heavily doped region be arranged like this.But there is no the N-type heavily doped region is a kind of more excellent execution mode of Trench IGBT in fact, on schottky contact layer, in formation metallization negative electrode, at gate oxide and Pbody withstand voltage zone, form the metallization negative electrode.So, for embodiment of the method, the method that does not form the step of N-type heavily doped region is a kind of more preferably embodiment of the method in fact, the making step of Trench IGBT is also simplified to some extent like this.In fact, the metallization negative electrode on schottky contact layer, Pbody withstand voltage zone and gate oxide can be to form simultaneously, also can form respectively three partially metallised negative electrodes of connection.
Make to form between Pbody withstand voltage zone in Trench IGBT and gate oxide the step of raceway groove as shown in Figure 4:
Step S401 takes trench structure on the low-doped substrate of N-type base.
Step S402, be formed at Pbody withstand voltage zone and gate oxide respectively at least two disconnected grooves that the low-doped substrate-based of N-type goes.
After Pbody withstand voltage zone and gate oxide are infused in respectively on the N-type doped regions in the different groove taken, Pbody withstand voltage zone and gate oxide have just formed raceway groove.After raceway groove forms, form the Schottky hole to form schottky contact layer on the N-type light dope substrate base between Pbody withstand voltage zone and gate oxide.
The Trench IGBT provided due to the embodiment of the present invention has schottky contact layer, thus after having formed Pbody withstand voltage zone and gate oxide, need to form schottky contact layer, and then form the metallization negative electrode.
Below in conjunction with Fig. 5, embodiment of the method provided by the invention is done and illustrated.As shown in Figure 5, the method comprises:
Step S501, choose the N-type crystalline silicon as the substrate base.
Step S502 takes groove on the substrate base.
Step S503 forms gate oxide in groove.It is growth of gate oxide layer that this step can be utilized dry oxygen method.
Step S504 forms the Pbody district in groove.Forming the Pbody district actual is to form P type heavy doping structure.Pbody district and gate oxide are formed at respectively in different grooves, do not contact, and could form raceway groove between Pbody district and gate oxide like this.
Step S505 forms gate electrode on the gate oxide formed.The method that forms gate electrode is such as gate polysilicon.In order to make gate oxide parcel gate electrode, can after the injection grid polysilicon, continue the deposit gate oxide.
Step S505 must be after step S503, but step S504 can before step S503 or after step S505.
Step S506, to the surface rubbing of Pbody district, N-type light doping section and gate oxide, form passivation layer.
Step S507, will need the part exposure of etching schottky contact layer on passivation layer after, form schottky contact layer.Also have the N-type heavily doped region if need to make between the Pbody district of Trench IGBT and metallization negative electrode, need to be after step S507, then form the N-type heavily doped region.
Step S508, at the upper metallization cathode layer that forms of Pbody district, schottky contact layer, gate oxide and N-type heavily doped region (if containing the N-type heavily doped region between Pbody district and metallization negative electrode).
Step S509, the N-type doped regions not the part surface of grooving form P type heavily doped region.
Step S510, form the metallization anode again on the P type heavily doped region formed in step S509.
In the process of above-mentioned making, can carry out accommodation to the method in some steps.
Different being of the manufacture method of above-mentioned Trench IGBT and common Trench IGBT manufacture method, before forming the metallization negative electrode, can on the position of the N-type heavily doped region between former N-type light doping section and metallization negative electrode, form schottky contact layer, so that the conduction voltage drop of the Trench IGBT produced like this is lower.And, if no longer form the N-type heavily doped region between metallization negative electrode and Pbody withstand voltage zone, also can more simplify the making flow process of this Trench IGBT.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention the present invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (8)
1. a channel-type insulated gate bipolar transistor Trench IGBT, is characterized in that, described Trench IGBT comprises gate oxide, Pbody withstand voltage zone, the low-doped substrate of N-type base, metallization negative electrode and schottky contact layer;
Described schottky contact layer contacts with gate oxide, Pbody withstand voltage zone, the low-doped substrate of N-type base and metallization negative electrode.
2. Trench IGBT according to claim 1, is characterized in that, between described Pbody withstand voltage zone and metallization negative electrode, do not comprise the N-type heavily doped region.
3. Trench IGBT according to claim 1 and 2, is characterized in that, described gate oxide does not contact with the Pbody withstand voltage zone, and the channel region between gate oxide and Pbody withstand voltage zone is filled with the low-doped substrate of N-type base.
4. Trench IGBT according to claim 3, is characterized in that, described schottky contact layer is arranged in described channel region.
5. a method of manufacturing channel-type insulated gate bipolar transistor Trench IGBT, is characterized in that, the method comprises:
Form Pbody withstand voltage zone and gate oxide on the low-doped substrate of N-type base after, on the low-doped substrate of the N-type base between gate oxide and Pbody withstand voltage zone, form schottky contact layer, described schottky contact layer contacts with the Pbody withstand voltage zone with gate oxide;
Form the metallization negative electrode on schottky contact layer.
6. method according to claim 5, is characterized in that, described method also comprises:
Form the metallization negative electrode when forming the metallization negative electrode on schottky contact layer on gate oxide and Pbody withstand voltage zone.
7. according to the described method of claim 5 or 6, it is characterized in that, describedly form the Pbody withstand voltage zone and gate oxide comprises on the low-doped substrate of N-type base:
Take trench structure on the low-doped substrate of N-type base;
Pbody withstand voltage zone and gate oxide are formed at respectively at least two disconnected grooves on the low-doped substrate of N-type base.
8. method according to claim 7, is characterized in that, the method for described formation schottky contact layer is to form the Schottky hole on the low-doped substrate of the N-type between Pbody withstand voltage zone and gate oxide.
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| CN101393927A (en) * | 2008-10-31 | 2009-03-25 | 电子科技大学 | Accumulation layer controlled insulation gate type bipolar transistor |
| CN101694851A (en) * | 2009-10-16 | 2010-04-14 | 电子科技大学 | Grooved gate IGBT with P-type floating layer |
| JP2012028719A (en) * | 2010-07-28 | 2012-02-09 | Denso Corp | Insulated-gate semiconductor device |
| CN102184948A (en) * | 2011-05-09 | 2011-09-14 | 电子科技大学 | Improved planear insulated gate bipolar transistor |
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