CN103477416B - 扫描离子束的改善均匀性 - Google Patents

扫描离子束的改善均匀性 Download PDF

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Publication number
CN103477416B
CN103477416B CN201280017078.3A CN201280017078A CN103477416B CN 103477416 B CN103477416 B CN 103477416B CN 201280017078 A CN201280017078 A CN 201280017078A CN 103477416 B CN103477416 B CN 103477416B
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China
Prior art keywords
ion beam
axle
ion
along
workpiece
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CN201280017078.3A
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English (en)
Chinese (zh)
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CN103477416A (zh
Inventor
爱德华·艾伊斯勒
安迪·雷
伯·范德伯格
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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Publication of CN103477416A publication Critical patent/CN103477416A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/02—Irradiation devices having no beam-forming means
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/04—Irradiation devices with beam-forming means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
CN201280017078.3A 2011-03-31 2012-03-29 扫描离子束的改善均匀性 Active CN103477416B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/077,112 2011-03-31
US13/077,112 US8378313B2 (en) 2011-03-31 2011-03-31 Uniformity of a scanned ion beam
PCT/US2012/000178 WO2012134600A1 (en) 2011-03-31 2012-03-29 Improved uniformity of a scanned ion beam

Publications (2)

Publication Number Publication Date
CN103477416A CN103477416A (zh) 2013-12-25
CN103477416B true CN103477416B (zh) 2016-03-16

Family

ID=46062725

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280017078.3A Active CN103477416B (zh) 2011-03-31 2012-03-29 扫描离子束的改善均匀性

Country Status (6)

Country Link
US (1) US8378313B2 (https=)
JP (1) JP6152087B2 (https=)
KR (1) KR101927784B1 (https=)
CN (1) CN103477416B (https=)
TW (1) TWI600045B (https=)
WO (1) WO2012134600A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
JP6415090B2 (ja) * 2014-04-23 2018-10-31 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
CN107850554B (zh) * 2015-08-26 2021-09-07 伊雷克托科学工业股份有限公司 相对于气流的镭射扫描定序及方向
CN106816367A (zh) * 2016-03-29 2017-06-09 长沙学院 一种控制离子圆形注入的二维扫描装置
CN110600354B (zh) * 2019-10-03 2021-12-28 山东昆仲信息科技有限公司 一种芯片生产用离子注入设备
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099130A (en) * 1990-03-08 1992-03-24 Superion Limited Apparatus and methods relating to scanning ion beams
CN1906728A (zh) * 2003-12-04 2007-01-31 日新意旺机械股份公司 离子束装置
CN101124650A (zh) * 2005-01-04 2008-02-13 艾克塞利斯技术公司 离子束扫描控制方法和用于均匀注入离子的系统
CN101461028A (zh) * 2006-06-23 2009-06-17 瓦里安半导体设备公司 离子植入机的扫描图案
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283631A (en) 1980-02-22 1981-08-11 Varian Associates, Inc. Bean scanning and method of use for ion implantation
US4736107A (en) * 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
WO2002052609A2 (en) * 2000-12-27 2002-07-04 Proteros, Llc Compact beamline and ion implanter system using same
JP3692999B2 (ja) * 2001-10-26 2005-09-07 日新イオン機器株式会社 イオン注入方法およびその装置
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US6992308B2 (en) 2004-02-27 2006-01-31 Axcelis Technologies, Inc. Modulating ion beam current
US7078714B2 (en) 2004-05-14 2006-07-18 Nissin Ion Equipment Co., Ltd. Ion implanting apparatus
JP2006019048A (ja) * 2004-06-30 2006-01-19 Toshiba Corp イオン注入装置および半導体装置の製造方法
US7176470B1 (en) 2005-12-22 2007-02-13 Varian Semiconductor Equipment Associates, Inc. Technique for high-efficiency ion implantation
US7615763B2 (en) * 2006-09-19 2009-11-10 Axcelis Technologies, Inc. System for magnetic scanning and correction of an ion beam
US7589333B2 (en) * 2006-09-29 2009-09-15 Axcelis Technologies, Inc. Methods for rapidly switching off an ion beam
JP2011086643A (ja) 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5099130A (en) * 1990-03-08 1992-03-24 Superion Limited Apparatus and methods relating to scanning ion beams
CN1906728A (zh) * 2003-12-04 2007-01-31 日新意旺机械股份公司 离子束装置
CN101124650A (zh) * 2005-01-04 2008-02-13 艾克塞利斯技术公司 离子束扫描控制方法和用于均匀注入离子的系统
CN101461028A (zh) * 2006-06-23 2009-06-17 瓦里安半导体设备公司 离子植入机的扫描图案
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter

Also Published As

Publication number Publication date
JP2014509778A (ja) 2014-04-21
CN103477416A (zh) 2013-12-25
TW201250762A (en) 2012-12-16
US8378313B2 (en) 2013-02-19
JP6152087B2 (ja) 2017-06-21
TWI600045B (zh) 2017-09-21
WO2012134600A1 (en) 2012-10-04
US20120248326A1 (en) 2012-10-04
KR101927784B1 (ko) 2018-12-12
KR20140030173A (ko) 2014-03-11

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