CN103474538B - LED, its manufacture method and comprise its LED chip - Google Patents
LED, its manufacture method and comprise its LED chip Download PDFInfo
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Abstract
The invention discloses a kind of LED, its manufacture method and include its LED chip。This epitaxial wafer includes: layer of undoped gan, N-type GaN layer, active layer and the P type GaN layer outwards set gradually by substrate surface, active layer includes one or more groups quantum well layer, and each quantum well layer includes the InGaN potential well layer, GaN barrier layer and the MgN barrier layer that set gradually along the direction away from substrate。The method comprises the following steps: outwards sequentially formed layer of undoped gan, N-type GaN layer, active layer and P type GaN layer by substrate surface, the step being formed with active layer includes sequentially forming one or more groups quantum well layer, the step forming each quantum well layer includes: by N-type GaN layer surface outwardly direction, sequentially form InGaN potential well layer, GaN barrier layer and MgN barrier layer。The brightness and the internal quantum efficiency that adopt the obtained LED of manufacture method of LED provided by the invention get a promotion。
Description
Technical field
The present invention relates to technical field of semiconductor illumination, in particular to a kind of LED, its manufacture method and the LED chip comprising it。
Background technology
GaN base material (includes GaN, AlGaN, InGaN, MgGaN, SiGaN) and belongs to direct band-gap semicondictor, and its band gap is from 1.8～6.2V continuously adjustabe, it is the most frequently used material producing brightness blue light, green glow and white light LEDs, is widely used in backlight, the field such as large scale screen show, indicate label indicates, signal lights and illumination。
The manufacture method of GaN base LED chip is generally: adopt MOCVD(metal organic chemical compound vapor deposition) at one layer of GaN cushion of substrate Epitaxial growth；The GaN of then regrowth undoped, it is therefore an objective to improve the quality of subsequent epitaxial crystal, growth N-type GaN, active layer and P type GaN form LED successively more on this basis, as shown in Figure 1。
Fig. 1 is the structural representation of existing GaN base LED chip, and this chip includes: be arranged on the layer of undoped gan 20 ' on substrate 10 ', including GaN cushion 21 ' and GaN layer 23 '；It is arranged on the N-type GaN layer 30 ' in layer of undoped gan 20 ', including the N-type GaN layer 33 ' of the N-type GaN layer 31 ' of doping Al and Si and doping Si；Being arranged on the active layer 40 ' in N-type GaN layer 30 ', and active layer has one or more groups quantum well layer, often group quantum well layer is made up of InGaN potential well layer 41 ' and GaN barrier layer 43 '；It is arranged on the P type GaN layer 50 ' on active layer 40 ', including the P type GaN layer 51 ' of doping Al and Mg, the doping P type GaN layer 53 ' of Mg and P type GaN contact layer 55 '。
At present, in the process of growth active area, the crystalline quality of InGaN potential well layer is poor, causes there is a lot of lattice defect in active area, and such as quantity is about 109cm-2Dislocation。These lattice defects can produce impurity ionization, excite the problem such as scattering and lattice scattering, and then cause that the non-radiative recombination center in active area increases, and reduce internal quantum efficiency and the luminous efficiency of LED。
Summary of the invention
It is desirable to provide a kind of LED, its manufacture method and include its LED chip, to solve the technical problem that active layer crystalline quality is poor, lattice defect is many that existing LED component exists。
One aspect of the present invention provides a kind of LED。This epitaxial wafer includes: layer of undoped gan, N-type GaN layer, active layer and the P type GaN layer outwards set gradually by substrate surface, wherein active layer includes one or more groups quantum well layer, and each quantum well layer includes the InGaN potential well layer 41, GaN barrier layer 43 and the MgN barrier layer 45 that set gradually along the direction away from described substrate 10。
Further, in above-mentioned LED, include 10～13 groups of quantum well layers at active layer。
Further, in above-mentioned LED, in each group quantum well layer, the thickness of MgN barrier layer is 0.3～1.0nm。
Further, in above-mentioned LED, the thickness of InGaN potential well layer is the thickness of 2.5～3.5nm, GaN barrier layer is 10～13nm, it is preferred that in InGaN potential well layer, the doping content of In is 2E+20～5E+20atom/cm3。
It is another aspect of the invention to provide the manufacture method of a kind of LED。This manufacture method comprises the following steps: include outwards being sequentially formed layer of undoped gan, N-type GaN layer, active layer and P type GaN layer by substrate surface, the step being formed with active layer includes sequentially forming one or more groups quantum well layer, the step forming each group of quantum well layer includes: by N-type GaN layer surface outwardly direction, sequentially form InGaN potential well layer, GaN barrier layer and MgN barrier layer。
Further, in the manufacture method of above-mentioned LED, it is formed in the step of active layer and sequentially forms 10～13 groups of quantum well layers。
Further, in the manufacture method of above-mentioned LED, the step forming MgN barrier layer includes: under the nitrogen atmosphere of the temperature and pressure identical with growth GaN barrier layer, or under the mixed atmosphere of hydrogen and nitrogen, passes into the growth of magnesium source and form the MgN barrier layer that thickness is 0.3～1.0nm。
Further, in the manufacture method of above-mentioned LED, the step forming InGaN potential well layer and GaN barrier layer includes: be 730～760 DEG C in temperature, pressure is under the nitrogen atmosphere of 150～300torr, or under the mixed atmosphere of hydrogen and nitrogen, pass into gallium source and the doping content that indium source growth formation thickness is 2.5～3.5nm, In is 2E+20～5E+20atom/cm3InGaN potential well layer；Stopping passing into indium source, be warming up to 840～890 DEG C, keep pressure constant, growth forms the GaN barrier layer that thickness is 10～13nm。
Further, in the manufacture method of above-mentioned LED, in the step of growth InGaN potential well layer, using triethyl-gallium or trimethyl gallium as gallium source, trimethyl indium is as indium source；In the step of growth GaN barrier layer, using triethyl-gallium or trimethyl gallium as gallium source；In the step of growth MgN barrier layer, using two luxuriant magnesium as magnesium source。
Another aspect of the present invention there are provided a kind of LED chip。The epitaxial wafer that this chip includes substrate, is arranged on substrate, and it is arranged on the P electrode on epitaxial wafer and N electrode, wherein epitaxial wafer is epitaxial wafer provided by the invention。
Application technical scheme, the GaN barrier layer of active area is formed MgN barrier layer, this MgN barrier layer can improve interfacial state and the roughness of active layer, reduce the lattice dislocation in active layer and defect, improve the crystalline quality of active layer, and then effectively reduce the non-radiative recombination center in active layer, improve the internal quantum efficiency of LED component。When crystalline quality effectively improves, InGaN potential well layer is more beneficial for In cohesion and forms In quantum dot, In quantum dot can be caught carrier and carry out radiation recombination luminescence, namely add radiation recombination center, thus improve the internal quantum efficiency of device, and finally improve the luminous efficiency of device。Simultaneously, this MgN barrier layer forms the small-sized PN junction of circulation in SQW, can improve hole flying power in SQW, thus increasing substantially hole concentration in SQW, it is effectively improved radiation recombination efficiency, further increases the internal quantum efficiency of LED component。
Accompanying drawing explanation
The accompanying drawing constituting the part of the present invention is used for providing a further understanding of the present invention, and the schematic description and description of the present invention is used for explaining the present invention, is not intended that inappropriate limitation of the present invention。In the accompanying drawings:
Fig. 1 illustrates the structural representation of existing LED；
Fig. 2 illustrates the structural representation of the LED that the embodiment of the present invention provides；
Fig. 3 illustrates the schematic flow sheet of the manufacture method of the LED that the embodiment of the present invention provides；
Fig. 4 illustrates in the manufacturing process of the LED provided in the embodiment of the present invention, substrate surface outwards sequentially form the cross-sectional view of matrix after GaN layer and N-type GaN layer；
Fig. 5 illustrates and is formed with the cross-sectional view of matrix after active layer in N-type GaN layer in the diagram；And
Fig. 6 illustrates and forms the cross-sectional view of matrix after P type GaN layer on active layer in Figure 5。
Detailed description of the invention
Below, the exemplary embodiment according to the present invention it is more fully described with reference to the accompanying drawings。But, these exemplary embodiments can be implemented by multiple different form, and should not be construed to be limited solely to the embodiments set forth herein。It should be appreciated that these embodiments are provided so that disclosure of the invention thoroughly and complete, and the design of these exemplary embodiments is fully conveyed to those of ordinary skill in the art。But the multitude of different ways that the present invention can be defined by the claims and cover is implemented。
The GaN layer that term " InGaN " is formed after referring to doping In in the present invention；The GaN layer that term P type GaN layer is formed after referring to doping Mg or doping Al or Mg and the Al that simultaneously adulterates；The GaN layer that term N-type GaN layer is formed after referring to doping Si；Term AlGaN layer refers to the GaN layer of Al and the Si that simultaneously adulterates。
By background technology it can be seen that the technical problem that active layer crystalline quality is poor, lattice defect is many of existing LED component existence, the problems referred to above are studied by the present inventor, it is proposed that a kind of LED。As shown in Figure 2, this epitaxial wafer includes the layer of undoped gan 20, N-type GaN layer 30, active layer 40 and the P type GaN layer 50 that are outwards set gradually by substrate 10 surface, wherein active layer 40 includes one or more groups quantum well layer, and each quantum well layer includes the InGaN potential well layer 41, GaN barrier layer 43 and the MgN barrier layer 45 that set gradually along the direction away from substrate 10。
In the above-mentioned LED that the present invention protects, active layer 40 can be one layer, it is also possible to is the multilamellar repeatedly arranged。The present invention one preferred embodiment in, this active layer 40 includes 10～13 groups of quantum well layers。
In LED provided by the present invention, the GaN barrier layer 43 of active layer 40 defines MgN barrier layer 45。This MgN barrier layer 45 can improve interfacial state and the roughness of active layer 40, reduces the lattice defect in active layer 40, improving the crystalline quality of active layer 40, effectively reducing non-radiative recombination center, thus improving the internal quantum efficiency of LED component。When crystalline quality effectively improves, InGaN potential well layer is more beneficial for In cohesion and forms In quantum dot, In quantum dot can be caught carrier and carry out radiation recombination luminescence, namely add radiation recombination center, thus improve the internal quantum efficiency of device, and finally improve the luminous efficiency of device。Simultaneously, this MgN barrier layer forms the small-sized PN junction of circulation in SQW, can improve hole flying power in SQW, thus increasing substantially hole concentration in SQW, it is effectively improved radiation recombination efficiency, further increases internal quantum efficiency and the luminous efficiency of LED component。
In LED provided by the present invention, in each group quantum well layer, MgN barrier layer 45 thickness can be arbitrary, but preferably the thickness of this MgN barrier layer 45 is 0.3～1.0nm。This MgN barrier layer 45 is not easily blocked up, not so can make epitaxial wafer surface coarsening, be unfavorable for last part technology。If Mg content in SQW is too much, can cause that the energy level of MgGaN occurs, produce too much ineffective radiation complex centre；Crystalline quality can be affected simultaneously, cause electrically bad。
In LED provided by the present invention, the thickness of GaN barrier layer 43 and InGaN potential well layer 41 is referred to the prior art requirement to it and is set, it is further preferable that the thickness that the thickness of GaN barrier layer 43 is 10～13nm, InGaN potential well layer 41 is 2.5～3.5nm。It is highly preferred that the doping content at above-mentioned InGaN potential well layer 41, In is 2E+20～3E+20atom/cm3。The THICKNESS CONTROL of InGaN potential well layer 41 is at 2.5～3.5nm, to ensure that device causes band curvature in tolerance interval because of polarized electric field effect, effectively controls wavelength half-wave width and blue shift。
Meanwhile, present invention also offers the manufacture method of a kind of LED。Fig. 3 illustrates the schematic flow sheet of the manufacture method of LED provided by the invention。As shown in Figure 3, the manufacture method of this LED includes outwards being sequentially formed layer of undoped gan 20, N-type GaN layer 30, active layer 40 and P type GaN layer 50 by substrate 10 surface, the step being formed with active layer 40 includes: sequentially form one or more groups quantum well layer, the step forming each quantum potential barrier layer includes: by N-type GaN layer 30 surface outwardly direction, sequentially form InGaN potential well layer 41, GaN barrier layer 43 and MgN barrier layer 45。
Fig. 4 to 6 illustrates the cross-sectional view in the manufacture method of LED provided by the invention after each step。In order to further illustrate the manufacture method of LED provided by the present invention, this manufacture method is expanded on further below in conjunction with Fig. 4 to 6。
First, substrate 10 surface layer of undoped gan 20 and N-type GaN layer 30 are outwards sequentially formed。In the preferred embodiment of the present invention, layer of undoped gan 20 includes GaN cushion 21 and GaN layer 23, and N-type GaN layer 30 includes the N-type GaN layer 31 of doping Al and Si and the N-type GaN layer 33 of doping Si。Now, the matrix formed has structure as shown in Figure 4。Now, substrate 10 surface outwards sequentially form layer of undoped gan 20 and N-type GaN layer 30 comprise the following steps:
From room temperature to 1000～1100 DEG C, under the hydrogen atmosphere that chamber pressure is 400～600mbar, process substrate 105～10 minutes。
Being cooled to 530～580 DEG C, under the hydrogen that chamber pressure is 450～550torr and nitrogen mixture atmosphere, substrate 10 is carried out nitrogen treatment, the process time is 2～6 minutes；Then passing to gallium source, growth thickness is the GaN cushion 21 of 30～40nm over the substrate 10。Preferably, gallium source includes but not limited to triethyl-gallium or trimethyl gallium, hydrogen and in nitrogen mixture atmosphere the volume fraction of hydrogen be 10%～20%。
It is warming up to 1050～1250 DEG C, is under the hydrogen of 100～250torr, nitrogen mixture atmosphere at pressure, be continually fed into the layer of undoped gan 23 that gallium source growth thickness is 2.5～3.5um。
It it is 900～1100 DEG C in temperature, chamber pressure is under the nitrogen atmosphere of 50～200torr or hydrogen and nitrogen mixture atmosphere, it is continually fed into gallium source and passes into aluminum source and silicon source accordingly, growth thickness is the N-type AlGaN layer 31 of 40～60nm, and wherein the doping content of Al is 1E+20～4E+20atom/cm3, the doping content of Si is 5E+17～9E+17atom/cm3。Preferably, aluminum source preferably includes, but is not limited to trimethyl aluminium, and silicon source preferably includes, but is not limited to silane。
It it is 1050～1250 DEG C in temperature, chamber pressure is under the hydrogen of 100～250torr and nitrogen mixture atmosphere, be continually fed into gallium source and and silicon source, stop passing into aluminum source, growth thickness is the N-type GaN layer 33 of 3.0～3.5um, and wherein the doping content of Si is 4E+18～8E+18atom/cm3。
After completing outwards to be sequentially formed the step of layer of undoped gan 20 and N-type GaN layer 30 by substrate 10 surface, N-type GaN layer 30 is formed active layer 40, the step being formed with active layer 40 includes sequentially forming one or more groups quantum well layer, the step being formed with each quantum potential barrier layer includes, by N-type GaN layer 30 surface outwardly direction, sequentially forming InGaN potential well layer 41, GaN barrier layer 43 and MgN barrier layer 45。Now, the matrix formed has structure as shown in Figure 5。
In the preferred embodiment of the present invention, the step being formed with active layer 40 sequentially forms 1 layer, 5 layers, 10 layers, 11 layers, 12 layers, 13 layers or 15 layers of quantum well layer, wherein being preferably formed 10～13 groups of quantum well layers, in formation often group quantum well layer, the step of InGaN potential well layer 41, GaN barrier layer 43 and MgN barrier layer 45 includes:
(1) being 730～760 DEG C in temperature, pressure is the nitrogen of 150～300torr, or under the mixed atmosphere of hydrogen and nitrogen, passes into gallium source and the doping content that indium source growth thickness is 2.5～3.5nm, In is 2E+20～5E+20atom/cm3InGaN potential well layer 41, wherein, hydrogen and in nitrogen mixture atmosphere the volume fraction of hydrogen be 10%～20%, gallium source preferably includes, but is not limited to triethyl-gallium or trimethyl gallium, and indium source preferably includes, but is not limited to trimethyl indium。
(2) on the basis of step (1), stopping passes into indium source, is continually fed into gallium source, is warming up to 840～890 DEG C, keeps pressure constant, and growth thickness is the GaN barrier layer 43 of 10～13nm；Wherein, the raw material in gallium source and identical in passing into mode and step (1)。
(3) on the basis of step (2), stopping passes into gallium source, keeps temperature and pressure constant, passes into the MgN barrier layer 45 that magnesium source growth thickness is 0.3～1.0nm。Wherein, magnesium source preferably includes, but is not limited to two luxuriant magnesium growths。
In this step, by adopting identical temperature and pressure growth MgN barrier layer 45 and GaN barrier layer 43, it is possible to obtaining the good MgN thin layer of crystalline quality, the crystallization of GaN can be had a negative impact by the frequent change of contrary growth conditions。
After completing to be formed with the step of active layer 40 in N-type GaN layer 30, active layer 40 forms P type GaN layer 50。This P type GaN layer 50 can carry out Reasonable adjustment according to follow-up instructions for use according to prior art, in the preferred embodiment of the present invention, P type GaN layer 50 includes the P type AlGaN layer 51 of doping Al and Mg, the doping P type GaN layer 53 of Mg and P type GaN contact layer 55。Now, the matrix formed has structure as shown in Figure 6。In a kind of preferred version, active layer 40 is formed P type GaN layer 50 and comprises the following steps:
It is warming up to 850～1050 DEG C, it is the nitrogen atmosphere of 50～200torr at chamber pressure, or under hydrogen and nitrogen mixture atmosphere, passes into gallium source, aluminum source and magnesium source, growth thickness is the p-type AlGaN layer 51 of 30～60nm, and wherein the doping content of Al is 1E+20～4E+20atom/cm3, Mg doping content is 9E+18～2E+19atom/cm3。Preferably, gallium source includes but not limited to that triethyl-gallium or trimethyl gallium, aluminum source include but not limited to that trimethyl aluminium, magnesium source include but not limited to two luxuriant magnesium。
Being 850～1000 DEG C in temperature, chamber pressure is under the hydrogen of 100～250torr and nitrogen mixture atmosphere, passes into gallium source and P type GaN layer 53 that magnesium source growth thickness is 70～100nm, and wherein the doping content of Mg is 5E+19～2E+20atom/cm3。Preferably, gallium source includes but not limited to that triethyl-gallium or trimethyl gallium, magnesium source include but not limited to two luxuriant magnesium。
Keeping temperature, atmosphere and pressure constant, pass into gallium source and magnesium source, growth thickness is the p-type GaN type contact layer 55 of 2～4nm, and wherein the doping content of Mg is 4E+20～9E+20atom/cm3。Preferably, gallium source includes but not limited to that triethyl-gallium or trimethyl gallium, magnesium source include but not limited to two luxuriant magnesium。
It is cooled to 670～730 DEG C, under the nitrogen atmosphere that pressure is 50～200torr, is incubated 5～20min；Then, cool to room temperature with the furnace, namely obtain LED。
Above-mentioned growth technique can include but not limited to adopt chemical vapour deposition (CVD), sputtering, heat deposition, and above-mentioned technique is the technological means that this area is common, does not repeat them here。
Present invention also offers a kind of LED chip, including substrate 10, epitaxial wafer over the substrate 10 is set, and is arranged on the P electrode on epitaxial wafer and N electrode。Wherein, epitaxial wafer is epitaxial wafer provided by the invention。
The manufacture method of LED provided by the present invention will be further illustrated below with specific embodiment。
Embodiment 1
Present embodiments provide the manufacture method of a kind of LED, comprise the following steps:
First, substrate surface outwards sequentially form the N-type GaN of GaN cushion, GaN layer, N-type AlGaN and doping Si, comprise the following steps:
From room temperature to 1100 DEG C, under the hydrogen atmosphere that chamber pressure is 500mbar, process substrate 10 minutes；
Being cooled to 580 DEG C, under the mixed atmosphere of the hydrogen that chamber pressure is 500torr and nitrogen, substrate is carried out nitrogen treatment, the process time is 5 minutes, and wherein in mixed atmosphere, the volume fraction of hydrogen is 10%；Then pass to triethyl-gallium or trimethyl gallium, at the GaN cushion that Grown thickness is 540nm；
It is warming up to 1200 DEG C, under the mixed atmosphere of the hydrogen that pressure is 200torr and nitrogen, passes into the undoped GaN layer that trimethyl gallium growth thickness is 3um；
Being 1000 DEG C in temperature, chamber pressure is under the hydrogen of 200torr and the mixed atmosphere of nitrogen, passes into trimethyl gallium, trimethyl aluminium and silane, and growth thickness is the doping content of 50nm, Al is 4E+20atom/cm3, the doping content 6E+17 of Si is atom/cm3N-type AlGaN layer, wherein in mixed atmosphere, the volume fraction of hydrogen is 10%；
Being 1200 DEG C in temperature, chamber pressure is under the hydrogen of 200torr and the mixed atmosphere of nitrogen, passes into trimethyl gallium and silane, and growth thickness is the doping content of 3.0um, Si is 6E+18atom/cm3N-type GaN layer, wherein in mixed atmosphere, the volume fraction of hydrogen is 10%。
Then, N-type GaN layer sequentially forms 11 groups of quantum well layers, forms often group quantum well layer and comprise the following steps:
Being 750 DEG C in temperature, pressure is under the hydrogen of 200torr and the mixed atmosphere of nitrogen, passes into trimethyl gallium and the doping content that trimethyl indium growth thickness is 3nm, In is 2E+20atom/cm3InGaN potential well layer, wherein in mixed atmosphere, the volume fraction of hydrogen is 10%；
Stopping passing into trimethyl indium, be warming up to 860 DEG C, keep pressure constant, growth thickness is the GaN barrier layer of 11nm；Stop passing into trimethyl gallium, keep temperature and pressure constant, pass into the MgN barrier layer that two luxuriant magnesium growth thickness are 0.7nm。
Finally, active layer is formed P type AlGaN layer, the doping P type GaN layer of Mg and P type GaN contact layer, comprises the following steps:
Being warming up to 1000 DEG C, under the mixed atmosphere of the hydrogen that chamber pressure is 150torr and nitrogen, pass into trimethyl gallium, trimethyl aluminium and two luxuriant magnesium, growth thickness is the p-type AlGaN layer of 50nm, and wherein the doping content of Al is 2E+20atom/cm3, Mg doping content is 2E+19atom/cm3, wherein in mixed atmosphere, the volume fraction of hydrogen is 10%。
Being 900 DEG C in temperature, chamber pressure is under the hydrogen of 200torr and the mixed atmosphere of nitrogen, passes into trimethyl gallium and two luxuriant magnesium, and growth thickness is 80nm, Mg doping content is 8E+19atom/cm3P type GaN layer, wherein in mixed atmosphere, the volume fraction of hydrogen is 10%。
Keeping temperature, pressure constant, pass into trimethyl gallium and two luxuriant magnesium, growth thickness is the p-type GaN type contact layer of 3nm, and wherein Mg doping content is 5E+20atom/cm3。
It is cooled to 700 DEG C, under the nitrogen atmosphere that pressure is 150torr, is incubated 15min；Then, cool to room temperature with the furnace, namely obtain LED。
Embodiment 2
Present embodiments provide the manufacture method of a kind of LED, wherein outwards sequentially formed the step of the N-type GaN of GaN cushion 21, GaN layer 23, N-type AlGaN and doping Si by substrate surface, and formation P type AlGaN layer, the P type GaN layer of Mg of adulterating and the step of P type GaN contact layer are identical with embodiment 1 on active layer。
In the present embodiment, N-type GaN layer is formed with the step of active layer: sequentially form 10 groups of quantum well layers, forms often group quantum well layer and comprise the following steps:
Being 730 DEG C in temperature, pressure is under the nitrogen atmosphere of 300torr, passes into trimethyl gallium, and the doping content that trimethyl indium growth thickness is 2.5nm, In is 3E+20atom/cm3InGaN potential well layer；
Stopping passing into trimethyl indium, be warming up to 840 DEG C, keep pressure constant, growth thickness is the GaN barrier layer of 13nm；Stop passing into trimethyl gallium, keep temperature and pressure constant, pass into the MgN barrier layer that two luxuriant magnesium growth thickness are 0.3nm。
Embodiment 3
Present embodiments provide the manufacture method of a kind of LED, wherein outwards sequentially formed the step of the N-type GaN of GaN cushion, GaN layer, N-type AlGaN and doping Si by substrate surface, and formation P type AlGaN layer, the P type GaN layer of Mg of adulterating and the step of P type GaN contact layer are identical with embodiment 1 on active layer。
In the present embodiment, N-type GaN layer is formed with the step of active layer: sequentially form 13 groups of quantum well layers, forms often group quantum well layer and comprise the following steps:
Being 760 DEG C in temperature, pressure is under the hydrogen of 150torr and the mixed atmosphere of nitrogen, passes into triethyl-gallium and the doping content that trimethyl indium growth thickness is 3.5nm, In is 5E+20atom/cm3InGaN potential well layer, wherein in mixed atmosphere, the volume fraction of hydrogen is 15%；
Stopping passing into trimethyl indium, be warming up to 890 DEG C, keep pressure constant, growth thickness is the GaN barrier layer of 10nm；Stop passing into triethyl-gallium or trimethyl gallium, keep temperature and pressure constant, pass into the MgN barrier layer that two luxuriant magnesium growth thickness are 1.0nm。
Embodiment 4
Present embodiments provide the manufacture method of a kind of LED, wherein outwards sequentially formed the step of the N-type GaN of GaN cushion, GaN layer, N-type AlGaN and doping Si by substrate surface, and formation P type AlGaN layer, the P type GaN layer of Mg of adulterating and the step of P type GaN contact layer are identical with embodiment 1 on active layer。
In the present embodiment, N-type GaN layer is formed with the step of active layer: sequentially form 15 groups of quantum well layers, forms often group quantum well layer and comprise the following steps:
Being 720 DEG C in temperature, pressure is under the hydrogen of 320torr and the mixed atmosphere of nitrogen, passes into trimethyl gallium and the doping content that trimethyl indium growth thickness is 4nm, In is 5.2E+20atom/cm3InGaN potential well layer, wherein in mixed atmosphere, the volume fraction of hydrogen is 20%；
Stopping passing into trimethyl indium, be warming up to 900 DEG C, keep pressure constant, growth thickness is the GaN barrier layer of 15nm；Stop passing into trimethyl gallium, keep temperature and pressure constant, pass into the MgN barrier layer that two luxuriant magnesium growth thickness are 1.5nm。
Comparative example 1
This comparative example provides the manufacture method of a kind of existing LED, wherein outwards sequentially formed the step of the N-type GaN of GaN cushion, GaN layer, N-type AlGaN and doping Si by substrate surface, and formation P type AlGaN layer, the P type GaN layer of Mg of adulterating and the step of P type GaN contact layer are identical with embodiment 1 on active layer。
In the present embodiment, N-type GaN layer is formed with the step of active layer: sequentially form 11 groups of quantum well layers, forms often group quantum well layer and comprise the following steps:
Being 750 DEG C in temperature, pressure is under the nitrogen atmosphere of 200torr, passes into trimethyl gallium and the doping content that trimethyl indium growth thickness is 3nm, In is 2E+20atom/cm3InGaN potential well layer；
Stopping passing into trimethyl indium, be warming up to 860 DEG C, keep pressure constant, growth thickness is the GaN barrier layer of 11nm。
Test:
5 samples by LED obtained by embodiment 1 to 4 and comparative example 1; ITO layer 100nm is plated under identical front process conditions; Cr/Pt/Au electrode 70nm is plated when identical; when identical, plating SiO2 is about 30nm; then at identical conditions sample grinding and cutting is become the chip granule of 762 μm * 762 μm (30mi*30mil); then 150 crystal grain are each selected in the same position of embodiment 1 to 4 and comparative example 1 sample; under identical packaging technology, it is packaged into white light LEDs。Then adopt integrating sphere to test its brightness when driving electric current 350mA, and statistics show that mean flow rate, test result ask for an interview table 1；Measuring the Output optical power of LED obtained by embodiment 1 to 4 and comparative example 1 and, with the variation relation of electric current, obtain internal quantum efficiency numerical value by nonlinear fitting near external quantum efficiency extreme value, test result asks for an interview table 1。
Table 1
| Mean flow rate/mw | Internal quantum efficiency/% | |
| Embodiment 1 | 358 | 66 |
| Embodiment 2 | 356 | 68 |
| Embodiment 3 | 360 | 67 |
| Embodiment 4 | 350 | 65 |
| Comparative example 1 | 314 | 61 |
As it can be seen from table 1 compared with LED obtained by comparative example 1, the mean flow rate of LED obtained by the embodiment of the present invention 1 to 4 improves 36～46mw, and internal quantum efficiency improves 4%～7%。
As can be seen from the above embodiments, the above-mentioned example of the present invention achieves following technique effect: form MgN barrier layer on the GaN barrier layer of active area, this MgN barrier layer can improve interfacial state and the roughness of active layer, reduce the lattice dislocation in active layer and defect, improve the crystalline quality of active layer, and then effectively reduce the non-radiative recombination center in active layer。Simultaneously, this MgN barrier layer forms the small-sized PN junction of circulation in SQW, can improve hole flying power in SQW, thus increasing substantially hole concentration in SQW, it is effectively improved radiation recombination efficiency, further increases the internal quantum efficiency of LED component。When crystalline quality effectively improves, InGaN potential well layer is more beneficial for In cohesion and forms In quantum dot, In quantum dot can be caught carrier and carry out radiation recombination luminescence, namely add radiation recombination center, thus improve the internal quantum efficiency of device, and finally improve the luminous efficiency of device。The brightness and the internal quantum efficiency that adopt the obtained LED of manufacture method of LED provided by the invention get a promotion。
These are only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations。All within the spirit and principles in the present invention, any amendment of making, equivalent replacement, improvement etc., should be included within protection scope of the present invention。
Claims (11)
1. a LED, including the GaN layer (20) outwards set gradually by substrate (10) surface, N-type GaN layer (30), active layer (40) and P type GaN layer (50), described active layer (40) includes one or more groups quantum well layer, it is characterized in that, each quantum well layer is included InGaN potential well layer (41), GaN barrier layer (43) and MgN barrier layer (45) successively by the outwardly direction of described N-type GaN layer surface。
2. epitaxial wafer according to claim 1, it is characterised in that include quantum well layer described in 10～13 groups at described active layer (40)。
3. epitaxial wafer according to claim 2, it is characterised in that described in the described quantum well layer of each group, the thickness of MgN barrier layer (45) is 0.3～1.0nm。
4. epitaxial wafer according to claim 3, it is characterised in that the thickness of described InGaN potential well layer (41) is 2.5～3.5nm, the thickness of described GaN barrier layer (43) is 10～13nm。
5. epitaxial wafer according to claim 4, it is characterised in that in described InGaN potential well layer (41), the doping content of In is 2E+20～5E+20atom/cm3。
6. the manufacture method of a LED, GaN layer (20), N-type GaN layer (30), active layer (40) and P type GaN layer (50) is outwards sequentially formed including by substrate (10) surface, the described step being formed with active layer (40) includes: sequentially form one or more groups quantum well layer, it is characterized in that, the step forming each described quantum well layer includes: by described N-type GaN layer (30) surface outwardly direction, sequentially form InGaN potential well layer (41), GaN barrier layer (43) and MgN barrier layer (45)。
7. manufacture method according to claim 6, it is characterised in that described in be formed in the step of active layer (40) and sequentially form 10～13 groups of quantum well layers。
8. manufacture method according to claim 7, it is characterised in that the step forming described MgN barrier layer (45) includes:
Under the nitrogen adopting the temperature and pressure identical with growing described GaN barrier layer (43) or the nitrogen atmosphere being mixed with a small amount of hydrogen, pass into the described MgN barrier layer (45) that magnesium source growth thickness is 0.3～1.0nm。
9. manufacture method according to claim 8, it is characterised in that the step forming described InGaN potential well layer (41) and described GaN barrier layer (43) includes:
Being 730～760 DEG C in temperature, pressure is the nitrogen of 150～300torr or under being mixed with the nitrogen atmosphere of a small amount of hydrogen, passes into gallium source and the doping content that indium source growth thickness is 2.5～3.5nm, In is 2E+20～5E+20atom/cm3Described InGaN potential well layer (41)；
Stopping passing into indium source, be warming up to 840～890 DEG C, keep pressure constant, growth thickness is the described GaN barrier layer (43) of 10～13nm。
10. manufacture method according to claim 9, it is characterised in that
In the step growing described InGaN potential well layer (41), using triethyl-gallium or trimethyl gallium as gallium source, trimethyl indium is as indium source；
In the step growing described GaN barrier layer (43), using triethyl-gallium or trimethyl gallium as gallium source；
In the step growing described MgN barrier layer (45), using two luxuriant magnesium as magnesium source。
11. a LED chip, including substrate, epitaxial wafer over the substrate is set, and is arranged on the P electrode on described epitaxial wafer and N electrode, it is characterised in that described epitaxial wafer is the epitaxial wafer according to any one of claim 1 to 5。
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