CN103474366B - A kind of hybrid bonded implementation method - Google Patents
A kind of hybrid bonded implementation method Download PDFInfo
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- CN103474366B CN103474366B CN201310419725.XA CN201310419725A CN103474366B CN 103474366 B CN103474366 B CN 103474366B CN 201310419725 A CN201310419725 A CN 201310419725A CN 103474366 B CN103474366 B CN 103474366B
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Abstract
The present invention provides a kind of hybrid bonded implementation method, comprises the steps: that (1) makes metal coupling at substrate surface; (2) at substrate surface coated media layer, described metal coupling is covered; (3) adopt the mode that machinery strikes off, process substrate surface, make substrate surface metal coupling and medium layer surface in a plane; (4) two-layer substrate making the above method of employing make is relative, makes two-layer substrate surface metal projection and medium layer alignment, and realizes the bonding of two-layer substrate by applying pressure and temperature condition. It is an advantage of the invention that: the mode adopting machinery to strike off processes substrate surface, obtains hybrid bonded structure, and whole technical process does not need CMP, reduces difficulty and the cost of hybrid bonded technique.
Description
Technical field
The present invention relates to a kind of hybrid bonded implementation method, belong to technical field of manufacturing semiconductors.
Background technology
Electroconductibility bonding is the critical aspects in three-dimensional integration technology, it directly realizes mechanical connection and the electricity connection of two layers of substrate to be bonded, generally pass through metal link, such as Cu-Cu bonding, or comprise the hybrid bonded of metal construction, hybrid bonded such as copper and silicon oxide, or copper and polymkeric substance is hybrid bonded etc., realize, simple Cu-Cu bonding is difficult to obtain sufficiently high bond strength, and in conjunction with the hybrid bonded bond strength that can effectively ensure of silicon oxide or polymkeric substance, be more and more subject to industry and pay close attention to. Existing hybrid bonded method generally adopts the mode treat surface of CMP, need to optimize CMP process, comprise device control parameter and polishing fluid optimizing components etc., cost height on the one hand, dishing effect is difficult to control on the other hand, it is difficult to obtain metal construction consistent with the height on other bonding subsidiary material surfaces, affects bonding quality.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that the hybrid bonded implementation method of a kind of low cost and easily control, ensures hybrid bonded effectively carrying out.
According to technical scheme provided by the invention, described hybrid bonded implementation method comprises the steps: that (1) makes metal coupling at substrate surface; (2) at substrate surface coated media layer, described metal coupling is covered; (3) adopt the mode that machinery strikes off, process substrate surface, make substrate surface metal coupling and medium layer surface in a plane; (4) two-layer substrate making the above method of employing make is relative, makes two-layer substrate surface metal projection and medium layer alignment, and realizes the bonding of two-layer substrate by applying pressure and temperature condition.
Described medium layer is polymer materials. Described polymer materials does not solidify before bonding completely, and solidification ratio is no more than 60%.
The method of described making metal coupling is plating.
Described metal coupling respective material is one or more combination in copper, nickel, tin, sn-ag alloy, SAC.
It is an advantage of the invention that: the mode adopting machinery to strike off processes substrate surface, obtains hybrid bonded structure, and whole technical process does not need CMP, reduces difficulty and the cost of hybrid bonded technique.
Accompanying drawing explanation
It is process flow sheet corresponding to the embodiment of the present invention shown in Fig. 1.
Fig. 2 is that embodiment of the present invention step one processes rear diagrammatic cross-section.
Fig. 3 is diagrammatic cross-section after the process of embodiment of the present invention step 2.
Fig. 4 is diagrammatic cross-section after the process of embodiment of the present invention step 3.
Fig. 5 is diagrammatic cross-section after embodiment of the present invention step 4 two-layer substrate bonding.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
It is process flow sheet corresponding to an embodiment provided by the invention shown in Fig. 1, it is more detailed description the present invention, is introduced step by step below.
(1) step 1: i.e. S1 shown in Fig. 1. As shown in Figure 2, being manufactured with circuit layer 102 on substrate 101 surface, such as transistor, diode, resistance, electric capacity, metal line etc., semiconducter substrate 101 thickness is at 50 ~ 800 micrometer ranges, and circuit layer 102 thickness is at 0.5 ~ 5 micrometer range. On this basis, metal coupling 104 is made on substrate 101 surface, it is preferable that the mode of plating is processed, metal coupling 104 material therefor preferably copper material, it is also possible to be nickel, tin, sn-ag alloy, SAC, or the combination of various metals or alloy.
More specifically, the mode that metallic copper projection adopts half addition is made: namely first in substrate surface deposition of adhesion and Seed Layer; Then photoetching is carried out, it may also be useful to photoresist material defines the position needing processing metal copper bump; Then electroplate, obtain metal coupling; Finally remove adhesion layer and the Seed Layer on area substrate surface outside photoresist material and metallic copper projection, complete the processing of metallic copper projection.
(2) step 2: i.e. S2 shown in Fig. 1. As shown in Figure 3, at substrate 101 surface spin-coated polymer layers 103, described metal coupling 104 is covered, described polymkeric substance preferred phenylpropyl alcohol cyclobutene (BCB) material, can also adopting polyimide, SU8 etc., and only do partially cured after application, solidification ratio is no more than 60%.
(3) step 3: i.e. S3 shown in Fig. 1. Adopting the mode that strikes off of machinery to process substrate 101 surface, after striking off, the polymer layer 103 on substrate 101 surface also has certain thickness, residual thickness more than 1 micron, to ensure the needs of electrical isolation. Metal coupling 104 and polymer layer 103 surface are after striking off process in same plane, and surface average roughness is less than 20 nanometers, as shown in Figure 4.
Surface strikes off the surface evening machine (SurfacePlaner) that Disco company of Japan can be adopted to provide and realizes, and it strikes off rear surface roughness and can control at below 20nm.
(4) step 4: i.e. S4 shown in Fig. 1. The substrate adopting above method to make two is relative, two-layer substrate 101,201 surface metal material and polymer layer is directed at mutually, and applies suitable temperature and pressure, it is achieved the bonding of two-layer substrate. More specifically, it may also be useful to the temperature of 200 ~ 400 degrees Celsius, the bonding pressure applying 0.05 ~ 0.5MPa is bonded, before implementing bonding technology, treat bonded substrate and carry out surface treatment, such as ultrasonic cleaning, plasma cleanings etc., remove surface particles and zone of oxidation, ensure bonded interface performance.
As shown in Figure 5, second layer substrate 201 has the structure similar with substrate 101, comprises second layer substrate surface circuit layer 202, second layer substrate surface polymer layer 203, second layer substrate surface metallic substance 204. Two-layer substrate surface metal material 104,204 is directed at, and surface aggregate nitride layer 103,203 is directed at.
It can be seen that the present invention possesses following feature: the mode adopting machinery to strike off processes bonding surface; Bonding structure surface comprises metal and the mixed structure of medium layer composition. Like this, whole technical process does not need CMP, reduces difficulty and the cost of hybrid bonded technique.
The foregoing is only the better embodiment of the present invention, not in order to limit the present invention. Within the spirit and principles in the present invention all, any amendment of making, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. a hybrid bonded implementation method, is characterized in that, comprises the steps:
Metal coupling is made at substrate surface;
At substrate surface coated media layer, cover described metal coupling; Described medium layer is polymer materials, and polymer materials does not solidify before bonding completely, and solidification ratio is no more than 60%;
Adopt the mode that machinery strikes off, process substrate surface, make substrate surface metal coupling and medium layer surface in a plane;
The two-layer substrate that the above method of employing is made is relative, makes two-layer substrate surface metal projection and medium layer alignment, and realizes the bonding of two-layer substrate by applying pressure and temperature condition.
2. a kind of hybrid bonded implementation method as claimed in claim 1, is characterized in that, the method for described making metal coupling is plating.
3. a kind of hybrid bonded implementation method as claimed in claim 1, is characterized in that, described metal coupling material is one or more combination in copper, nickel, tin, sn-ag alloy, SAC.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310419725.XA CN103474366B (en) | 2013-09-13 | 2013-09-13 | A kind of hybrid bonded implementation method |
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| CN201310419725.XA CN103474366B (en) | 2013-09-13 | 2013-09-13 | A kind of hybrid bonded implementation method |
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| CN103474366A CN103474366A (en) | 2013-12-25 |
| CN103474366B true CN103474366B (en) | 2016-06-01 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097427A (en) * | 2014-04-23 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Method for monitoring pre-cleaning technology of metal intermediate layer before wafer bonding |
| CN104167372A (en) * | 2014-08-08 | 2014-11-26 | 武汉新芯集成电路制造有限公司 | Mixed bonding method |
| CN105006441A (en) * | 2015-06-24 | 2015-10-28 | 武汉新芯集成电路制造有限公司 | High-air-pressure thermal-annealing hybrid bonding method |
| CN106707091A (en) * | 2016-12-13 | 2017-05-24 | 武汉新芯集成电路制造有限公司 | Detection method of hybrid bonding connection point connectivity |
| CN109686711A (en) * | 2018-12-26 | 2019-04-26 | 上海集成电路研发中心有限公司 | A method of it realizes hybrid bonded |
| CN113072037B (en) * | 2021-03-26 | 2023-10-31 | 电子科技大学 | Method for improving BCB bonding of glass substrate by surface plasma activation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1678708A (en) * | 2002-08-29 | 2005-10-05 | 微米技术有限公司 | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
| CN102656110A (en) * | 2009-07-03 | 2012-09-05 | 法国原子能与替代能委员会 | Simplified copper-copper bonding |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7385283B2 (en) * | 2006-06-27 | 2008-06-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Three dimensional integrated circuit and method of making the same |
| US7683459B2 (en) * | 2008-06-02 | 2010-03-23 | Hong Kong Applied Science and Technology Research Institute Company, Ltd. | Bonding method for through-silicon-via based 3D wafer stacking |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1678708A (en) * | 2002-08-29 | 2005-10-05 | 微米技术有限公司 | Method and apparatus for chemically, mechanically, and/or electrolytically removing material from microelectronic substrates |
| CN102656110A (en) * | 2009-07-03 | 2012-09-05 | 法国原子能与替代能委员会 | Simplified copper-copper bonding |
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