CN104112707B - A kind of solid ultrasonic bonding method based on nickel and copper micropin cone foreign structure - Google Patents
A kind of solid ultrasonic bonding method based on nickel and copper micropin cone foreign structure Download PDFInfo
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- CN104112707B CN104112707B CN201410313880.8A CN201410313880A CN104112707B CN 104112707 B CN104112707 B CN 104112707B CN 201410313880 A CN201410313880 A CN 201410313880A CN 104112707 B CN104112707 B CN 104112707B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81205—Ultrasonic bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8134—Bonding interfaces of the bump connector
- H01L2224/81345—Shape, e.g. interlocking features
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention discloses a kind of solid ultrasonic bonding methods based on nickel and copper micropin cone foreign structure, are including step：Selection forms an idol to be bonded two-by-two with the two or more elements to be bonded of electrical interconnection pad being mutually matched；Nickel micropin cone is formed on the pad of even wherein side to be bonded；Copper micropin cone is formed on the pad of even opposite side to be bonded；Even side element to be bonded is adsorbed on bonding apparatus pressure head surface；By the even both sides pad alignment to be bonded, the nickel micropin cone is made to be contacted with copper micropin cone matching, applies bonding pressure and ultrasonic vibration to the on a rare occasion side to be bonded and is kept for certain time so that the nickel micropin cone is bonded with copper micropin cone interconnection.The technical process of the present invention is simple, without heating and scaling powder, can avoid thermal damage, improve product reliability；Micropin wimble structure shortens the time of ultrasonic bond, improves the validity and bond densities of interconnection.
Description
Technical field
The present invention relates to semiconductor chip packaging fields, particular by the use of surface micropin cone metal layer, realize member
The method of ultrasound interconnection bonding between part.
Background technology
Electronic Packaging develops to miniaturization, densification and multi-chipization at present, and electrical interconnection technology is Electronic Encapsulating Technology
In core technology, traditional melting bonding by high temperature solder melts wetting at solder joint, bonding point caused after cooling
Curing, so as to obtain preferable connection.If traditional reflow soldering process needs temperature being heated to more than solder melt point, high temperature
Degree environment can generate ill effect in itself to chip, substantially reduce the reliability of product.In order to reach ideal weld strength,
Usually using organic matters such as scaling powders, needing to remove corresponding residue after the completion of welding, this needs to expend a large amount of production time, into
And reduce production efficiency.
Seek low welding temperature, the technique of high weld strength has become the development trend of interconnection technique.Have now a large amount of
Document and patent description realize interconnection using non-melt method, wherein very important approach is even using nano material para-linkage
Surface is handled, so as to reduce the temperature needed for bonding.Such as the high surface energy using materials such as nanoscale gold, silver, it reduces
Recrystallization temperature so as to generate low-temperature sintering phenomenon under pressure auxiliary, and then realizes low-temperature welding.For a diameter of 100nm
Nano-Ag particles for, bonding can carry out under 300 °C of temperature below, 25MPa pressure, obtain shear strength 10MPa with
On.In another example some metals can interact to form compound between refractory metal at low temperature, such as indium-silver, indium-tin etc. is all
It can be used for realizing that low temperature interconnects.
Ultrasonic bond is the energy generated using supersonic generator, fast under ultra-high frequency magnetic field induction by energy converter
Speed is flexible and generates vibration elastic, is then transmitted to chopper through ultrasonic transformer, makes its vibrations, while applies certain pressure on chopper.
Chopper is that two metal coverings of welding zone are in close contact under the collective effect of two kinds of resultant forces, reaches interatomic " bonding ", forms jail
Solid welding.
The surface topography even by changing bonding can also achieve the effect that reduce bonding temperature.Micropin conic array material
It since its needle point structure can destroy solder oxidation layer, is used in thermocompression bonding, Embedded interface is formed after bonding,
160-200 °C can obtain ideal bond strength, however the technology is difficult to practical application due to many bottlenecks.Such as interface
Existing cavity is so that bonding quality is bad, it is therefore desirable to which later stage butt welding contact continuous heating is to improve boundary strength；Cavity
In the presence of bonding is caused to need longer time, this has seriously affected its practical ranges.
Invention content
The purpose of the present invention is to provide a kind of nickel and the solid ultrasonic bonding method of copper micropin cone foreign structure, this method
Some defects existing for previous technique can be overcome, avoid reflow soldering process temperature height thermal damage caused by device, keep away simultaneously
The micropin cone interfacial voids problem of thermocompression bonding and the long problem of bonding time are exempted from, versatile, joint efficiency is high, reliability
It is good.
In order to solve the above technical problems, the present invention is achieved through the following technical solutions：
The present invention proposes a kind of solid ultrasonic bonding method based on nickel and copper micropin cone foreign structure, including step such as
Under：
1）It is to be bonded to form one with the two or more elements to be bonded of electrical interconnection pad being mutually matched two-by-two for selection
It is even；
2）Nickel micropin cone is formed on the electrical interconnection pad of even wherein side to be bonded；
3）Copper micropin cone is formed on the electrical interconnection pad of even opposite side to be bonded；
4）Even side element to be bonded is adsorbed on bonding apparatus pressure head surface；
5）The electrical interconnection pad of the both sides of element to be bonded is aligned, the nickel micropin cone is made to be matched with copper micropin cone
Contact applies bonding pressure and ultrasonic vibration to the on a rare occasion side to be bonded and is kept for certain time so that the nickel micropin cone
It is bonded with copper micropin cone interconnection.
Preferably, the formation of the nickel micropin cone and copper micropin cone is realized by electrodeposition process, is added by controlling
The parameters such as agent concentration, time, electrodeposition temperature, current density control the height of the nickel micropin cone to be received at 500 nanometers to 2000
Between rice, the cone bottom diameter of the nickel micropin cone is between 200 nanometers to 1000 nanometers, and the height of the copper micropin cone is 200
Nanometer is between 2000 nanometers, and the cone bottom diameter of the copper micropin cone is between 100 nanometers to 1000 nanometers；The institute of same pad
The needle cone height for stating nickel micropin cone or copper micropin cone is basically identical.
Preferably, after forming the nickel micropin cone and copper micropin cone, in nickel micropin cone and copper micropin cone
Surface prepares antioxidation coating；The antioxidation coating is metal simple-substances or the alloy such as oxidation resistant Au, Pt, Ag, Pd, Sn under high temperature,
Thickness is several nanometers to tens nanometer, does not change the appearance structure of the nickel micropin cone and copper micropin cone.
Preferably, the pressure head is hollow structure, and the element to be bonded, bonding process are adsorbed by negative pressure of vacuum mode
After pressure head reset and be detached from element.
Preferably, the ultrasonic vibration is generated by supersonic generator, and supersonic frequency is generally 10-150kHz, passes through machine
Tool device is conducted to the pressure head and the element to be bonded；Bonding process keeps hundreds of to thousands of under pressure and ultrasonic vibration
Microsecond, retention time are determined by the optimized results of metal species, bonding pressure, ultrasonic power and frequency requirement.
Generally, bonding process carries out at room temperature, and operation temperature is 15 degrees Celsius to 40 degrees Celsius；The bonding pressure of application
For 0.1-30MPa, bonding time 0.04-5s.Operation temperature is low, and bonding time is short, it is easier to it operates, it can extensive use.
Compared to the prior art, the present invention has the following advantages：
Nickel micropin cone has good mechanical snap to act on, while its good surface-active is led with copper micropin cone in the present invention
The counterdiffusion strengthening mechanism of cause can enhance bonding effect, it will be apparent that prevent the generation in bonding process cavity, and then be effectively reduced
Bonding temperature improves bonding quality.
Description of the drawings
Embodiments of the present invention are described further below in conjunction with the accompanying drawings：
Fig. 1 is sectional view of the nickel micropin cone of the present invention with copper micropin cone before bonding.
Specific embodiment
It elaborates below to the embodiment of the present invention, the present embodiment is carried out lower based on the technical solution of the present invention
Implement, give detailed embodiment and specific operating process, but protection scope of the present invention is not limited to following implementation
Example.
Referring to Fig. 1, the solid ultrasonic bonding method based on nickel and copper micropin cone foreign structure of the present invention, including step
It is as follows：
1）It is to be bonded to form one with the two or more elements to be bonded of electrical interconnection pad being mutually matched two-by-two for selection
It is even；
2）Nickel micropin cone 120 is formed on the electrical interconnection pad of even wherein side to be bonded；
3）Copper micropin cone 130 is formed on the electrical interconnection pad for treating even opposite side to be bonded；
4）Even side element to be bonded is adsorbed on 110 surface of bonding apparatus pressure head；
5）The electrical interconnection pad of even both sides to be bonded is aligned, the nickel micropin cone 120 is made to bore 130 with the copper micropin
Matching contact applies bonding pressure and ultrasonic vibration to the even side to be bonded and is kept for certain time so that the nickel
Micropin cone 120 is bonded with 130 interconnection of copper micropin cone.
Embodiment 1
（1）It is prepared by nickel micropin cone：Nickel micropin cone is prepared on the bare chip with I/O pads, first passes through electrochemical degreasing
Clean surface is handled, is subsequently dipped to activate to improve surface-active in 20wt.% sulfuric acid.Nickel needle is prepared using electro-deposition method
Cone, bath composition used are:The NiCl of 120g/L2, 40g/L H3BO4, 200g/L crystallization regulator.Electro-deposition item
Part is 60 °C, pH=4, current density 2A/dm2, sedimentation time 20min.The nickel needle cone height about 1000nm of preparation, cone
The a diameter of about 300nm~500nm of body.
（2）It is prepared by copper micropin cone：Copper micropin cone is prepared on another bare chip with I/O pads, first passes through electrochemistry
Oil removal treatment clean surface is subsequently dipped to activate to improve surface-active in 20wt.% sulfuric acid.Copper is prepared using electro-deposition method
Needle is bored, and bath composition used is:The CuSO of 100g/L4·5H2O, the H of 40g/L3BO4, 0.2g/L additive, 40
The effect of the complexing agent of g/L, wherein additive is that copper micropin is made to bore vertical-growth.Electrodeposition condition is 20 °C, pH=3, electric current
Density is 1.2A/dm2, sedimentation time 3min.The copper micropin cone height about 800nm of preparation, centrum diameter by about 300nm~
400nm。
（3）2 chips respectively containing nickel micropin cone and copper micropin cone are placed into alignment face-to-face, wherein side chip is put
To near pressure head, pressure head is adsorbed copper sheet on surface by vacuum power, is adjusted bonding pressure parameter, is adjusted ultrasonic power and frequency
Rate, regulating time controller, after turning on the switch, pressure head is with ultrasonic power 20W, equivalent static pressure 5MPa, bonding time 1.5s, complete
Into bonding.The vacuum of shutoff head 110, removes chip after bonding.
Embodiment 2
Nickel micropin cone 120 and antioxidation coating are prepared by chemical deposition or electrochemical deposition in the welding disking area of upside-down mounting substrate
Ag layers, integral thickness is about 5 μm, and the needle cone height of nickel micropin cone 120 is about 1 μm, and Ag layer thickness is 10nm, the Ag of this thickness
Needle wimble structure will not be had an impact.The welding disking area of another upside-down mounting substrate prepares copper micropin by chemical deposition or electro-deposition and bores
130 and Ag layers of antioxidation coating, integral thickness be about 5 μm, copper micropin cone 130 needle cone height be about 1 μm, Ag layer thickness is
10nm.Two upside-down mounting substrates are aligned face-to-face, and the chip that surface oxide layer is removed with pickling is put near pressure head 110, and pressure head 110 is logical
Vacuum power is crossed to adsorb chip in surface, adjusting bonding pressure parameter, adjusting ultrasonic power and frequency, regulating time controller,
After turning on the switch, pressure head 110 completes bonding with ultrasonic power 20W, equivalent static pressure 10MPa, bonding time 1.2s.After bonding
The vacuum of shutoff head 110, removes substrate.
Embodiment 3
In printed wiring board（PCB）For ball grid array（BGA）Nickel is prepared on the surface-pasted welding disking area metal derby of type
Au layers of micropin cone 120 and surface anti-oxidation layer, about 1 μm of the needle cone height of nickel micropin cone 120, Au layer thickness about 10nm.With similary
Method is in printed wiring board（PCB）For ball grid array（BGA）Copper micropin is prepared on the surface-pasted welding disking area metal derby of type
Au layers of cone 130 and surface anti-oxidation layer, the needle cone height of copper micropin cone 130 is about 1 μm, and Au layer thickness is 10nm.It will make respectively
The chip to be bonded for having nickel micropin cone 120 and copper micropin cone 130 places alignment face-to-face, one of them chip to be bonded is put into
Near pressure head 110, pressure head 110 is adsorbed chip on surface by vacuum power, adjusts bonding pressure parameter, adjust ultrasonic power and
Frequency, regulating time controller, after turning on the switch, pressure head 110 is with ultrasonic power 20W, equivalent static pressure 10MPa, bonding time
1.2s completes bonding.The vacuum of shutoff head 110, removes chip after bonding.
Further, the formation of nickel micropin cone 120 and copper micropin cone 130 can be realized by electrodeposition process, pass through control
The parameters such as additive concentration processed, time, electrodeposition temperature, current density control the height of the nickel micropin cone 120 to be received 500
Rice is between 2000 nanometers, and the cone bottom diameter of the nickel micropin cone 120 is between 200 nanometers to 1000 nanometers, the copper micropin
The height of cone is between 200 nanometers to 2000 nanometers, and the cone bottom diameter of the copper micropin cone 130 is at 100 nanometers to 1000 nanometers
Between；The nickel micropin cone 120 of same pad or the needle cone height of copper micropin cone 130 are basically identical.
Further, after forming the nickel micropin cone 120 and copper micropin cone 130, in nickel micropin cone 120 and copper micropin
The surface of cone 130 prepares antioxidation coating；The antioxidation coating is the metal simple-substances such as oxidation resistant Au, Pt, Ag, Pd, Sn under high temperature
Or alloy, thickness are several nanometers to tens nanometer, do not change the pattern knot of the nickel micropin cone 120 and copper micropin cone 130
Structure.
Further, pressure head 110 is hollow structure, adsorbs element to be bonded in a manner of negative pressure of vacuum by intermediate conduit,
Pressure head 110 resets and is detached from element after bonding process.
Further, ultrasonic vibration is generated by supersonic generator, and supersonic frequency is generally 10-150kHz, passes through machinery
Device is conducted to pressure head 110 and element to be bonded；Bonding process keeps hundreds of to thousand of milliseconds under pressure and ultrasonic vibration, protects
Hold the time is determined by the optimized results of solder metal type, bonding pressure, ultrasonic power and frequency requirement.
Generally, bonding process carries out at room temperature, and operation temperature is 0 degree Celsius to 60 degrees Celsius, since ultrasonic vibration rubs
The local temperature raising wiped and generated does not influence the effect of this method；Bonding pressure is between 0.1-30MPa, according to bonding ultrasound
Depending on power；Bonding time is generally between 0.04-5s, depending on bonding pressure and bonding ultrasonic power.Operation temperature is low,
Bonding time is short, it is easier to it operates, it can extensive use.
Disclosed herein is merely a preferred embodiment of the present invention, and this specification is chosen and specifically describes these embodiments, is
It is not limitation of the invention in order to preferably explain the principle of the present invention and practical application.Any those skilled in the art
The modifications and variations done in the range of specification should all be fallen in the range of the present invention protects.
Claims (8)
1. a kind of solid ultrasonic bonding method based on nickel and copper micropin cone foreign structure, which is characterized in that as follows including step：
1) selection forms an idol to be bonded two-by-two with the two or more elements to be bonded of electrical interconnection pad being mutually matched；
2) nickel micropin cone is formed on the electrical interconnection pad of even wherein side to be bonded, the formation of the nickel micropin cone passes through electricity
Sedimentation is realized, by controlling the parameters such as additive concentration, time, electrodeposition temperature, current density, the nickel micropin is controlled to bore
Height between 500 nanometers to 2000 nanometers, the cone bottom diameter of nickel micropin cone is between 200 nanometers to 1000 nanometers；
3) copper micropin cone is formed on the electrical interconnection pad of even opposite side to be bonded, the formation of the copper micropin cone is heavy by electricity
Area method is realized, by controlling the parameters such as additive concentration, time, electrodeposition temperature, current density, controls the copper micropin
The height of cone between 200 nanometers to 2000 nanometers, the cone bottom diameter of copper micropin cone 100 nanometers to 1000 nanometers it
Between；
4) even side element to be bonded is adsorbed on bonding apparatus pressure head surface；
5) the electrical interconnection pad of element to be bonded is aligned, the nickel micropin cone is made to be contacted with copper micropin cone matching, to institute
It states even side to be bonded to apply bonding pressure and ultrasonic vibration and kept for certain time so that the nickel micropin cone and the copper
Micropin cone interconnection bonding；
6) the nickel micropin cone of same pad or the needle cone height of copper micropin cone are basically identical.
2. the solid ultrasonic bonding method according to claim 1 based on nickel and copper micropin cone foreign structure, feature exist
In after forming nickel micropin cone and copper micropin cone, oxygen is prepared in nickel micropin cone and the copper micropin poppet surface
Change layer.
3. the solid ultrasonic bonding method according to claim 2 based on nickel and copper micropin cone foreign structure, feature exist
In, the antioxidation coating be metal simple-substances or the alloy such as oxidation resistant Au, Pt, Ag, Pd, Sn under high temperature, thickness for several nanometers extremely
Tens nanometer does not change the appearance structure of the nickel micropin cone and copper micropin cone.
4. the solid ultrasonic bonding method according to claim 3 based on nickel and copper micropin cone foreign structure, feature exist
In the pressure head is hollow structure, adsorbs the element to be bonded by negative pressure of vacuum mode, pressure head is answered after bonding process
Position is simultaneously detached from element.
5. the solid ultrasonic bonding method according to claim 4 based on nickel and copper micropin cone foreign structure, feature exist
In the ultrasonic vibration is generated by supersonic generator, is conducted by mechanical device to the pressure head and the element to be bonded.
6. the solid ultrasonic bonding method according to claim 5 based on nickel and copper micropin cone foreign structure, feature exist
Keep hundreds of to thousand of milliseconds under pressure and ultrasonic vibration in, bonding process, the retention time by metal species, bonding pressure,
The optimized results of ultrasonic power and frequency requirement determine.
7. the solid ultrasonic bonding method according to any one of claims 1 to 6 based on nickel and copper micropin cone foreign structure,
It is characterized in that, bonding process carries out at room temperature, operation temperature is 15 degrees Celsius to 40 degrees Celsius.
8. the solid ultrasonic bonding side according to any one of claim 1 to 6 based on nickel and copper micropin cone foreign structure
Method, which is characterized in that bonding pressure 0.1-30MPa, bonding time 0.04-5s.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410313880.8A CN104112707B (en) | 2014-07-03 | 2014-07-03 | A kind of solid ultrasonic bonding method based on nickel and copper micropin cone foreign structure |
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| CN201410313880.8A CN104112707B (en) | 2014-07-03 | 2014-07-03 | A kind of solid ultrasonic bonding method based on nickel and copper micropin cone foreign structure |
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| CN104112707B true CN104112707B (en) | 2018-07-03 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110197796B (en) * | 2019-05-07 | 2020-12-01 | 哈尔滨理工大学 | CGA device welding column forming method based on capillary gap filling effect |
| CN110085521B (en) * | 2019-05-10 | 2020-12-25 | 哈尔滨理工大学 | Ultrasonic auxiliary column planting method for packaging CuCGA device |
| CN111312603B (en) * | 2020-02-21 | 2021-05-04 | 广东工业大学华立学院 | Solid-state bonding method based on copper-nickel second-stage sea cucumber-like micro-nano layer |
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|---|---|---|---|---|
| CN101527271A (en) * | 2009-04-17 | 2009-09-09 | 中南大学 | Chip packaging method using conical bonding pad for thermosonic flip-chip bonding |
| TW201007862A (en) * | 2008-05-29 | 2010-02-16 | Fraunhofer Ges Forschung | Material connection method for metal contact structure |
| CN102543784A (en) * | 2012-03-28 | 2012-07-04 | 上海交通大学 | Solid-state hot-compression low-temperature bonding method using nickel micro needle cones |
| CN102610537A (en) * | 2012-03-28 | 2012-07-25 | 上海交通大学 | Method for low-temperature solid bonding of semiconductor device |
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2014
- 2014-07-03 CN CN201410313880.8A patent/CN104112707B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201007862A (en) * | 2008-05-29 | 2010-02-16 | Fraunhofer Ges Forschung | Material connection method for metal contact structure |
| CN101527271A (en) * | 2009-04-17 | 2009-09-09 | 中南大学 | Chip packaging method using conical bonding pad for thermosonic flip-chip bonding |
| CN102543784A (en) * | 2012-03-28 | 2012-07-04 | 上海交通大学 | Solid-state hot-compression low-temperature bonding method using nickel micro needle cones |
| CN102610537A (en) * | 2012-03-28 | 2012-07-25 | 上海交通大学 | Method for low-temperature solid bonding of semiconductor device |
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