CN103460387A - 用于纳米结构阵列的电极结构及其方法 - Google Patents

用于纳米结构阵列的电极结构及其方法 Download PDF

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Publication number
CN103460387A
CN103460387A CN2012800167545A CN201280016754A CN103460387A CN 103460387 A CN103460387 A CN 103460387A CN 2012800167545 A CN2012800167545 A CN 2012800167545A CN 201280016754 A CN201280016754 A CN 201280016754A CN 103460387 A CN103460387 A CN 103460387A
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China
Prior art keywords
contact layer
nano wire
contact
scope
nano
Prior art date
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Pending
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CN2012800167545A
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English (en)
Chinese (zh)
Inventor
马修·L·斯卡林
马达夫·A·卡里
亚当·洛里默
塞尔文·姆肯海恩
加布里埃尔·马特斯
贾斯汀·泰内斯·卡德尔
芭芭拉·瓦克尔
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Alphabet Energy Inc
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Alphabet Energy Inc
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Publication date
Priority claimed from US13/331,768 external-priority patent/US20120152295A1/en
Application filed by Alphabet Energy Inc filed Critical Alphabet Energy Inc
Publication of CN103460387A publication Critical patent/CN103460387A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Powder Metallurgy (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
CN2012800167545A 2011-02-02 2012-02-01 用于纳米结构阵列的电极结构及其方法 Pending CN103460387A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161438709P 2011-02-02 2011-02-02
US61/438,709 2011-02-02
US13/331,768 2011-12-20
US13/331,768 US20120152295A1 (en) 2010-12-21 2011-12-20 Arrays of filled nanostructures with protruding segments and methods thereof
PCT/US2012/023425 WO2012161757A1 (en) 2011-02-02 2012-02-01 Electrode structures for arrays of nanostructures and methods thereof

Publications (1)

Publication Number Publication Date
CN103460387A true CN103460387A (zh) 2013-12-18

Family

ID=47217566

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012800167545A Pending CN103460387A (zh) 2011-02-02 2012-02-01 用于纳米结构阵列的电极结构及其方法

Country Status (7)

Country Link
EP (1) EP2671255A4 (ja)
JP (1) JP2014510396A (ja)
KR (1) KR20140012073A (ja)
CN (1) CN103460387A (ja)
BR (1) BR112013019766A2 (ja)
CA (1) CA2825888A1 (ja)
WO (1) WO2012161757A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2013212087A1 (en) 2012-01-25 2014-08-07 Alphabet Energy, Inc. Modular thermoelectric units for heat recovery systems and methods thereof
US9257627B2 (en) 2012-07-23 2016-02-09 Alphabet Energy, Inc. Method and structure for thermoelectric unicouple assembly
US9065017B2 (en) 2013-09-01 2015-06-23 Alphabet Energy, Inc. Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same
CN103579484A (zh) * 2013-11-05 2014-02-12 姚芸 一种温差发电器用金属导体电极
TWI570972B (zh) * 2016-01-20 2017-02-11 財團法人工業技術研究院 熱電轉換裝置以及熱電轉換器
JP6830587B2 (ja) * 2016-04-11 2021-02-17 学校法人東京理科大学 導電膜付き柱状インゴット基板及びその製造方法、シリサイド系熱電変換素子及びその製造方法、熱電変換モジュール、並びにシリサイド系熱電変換素子の電極層形成用組成物
WO2019003581A1 (ja) * 2017-06-27 2019-01-03 株式会社村田製作所 熱電変換モジュールおよび電子部品モジュール
WO2019003582A1 (ja) * 2017-06-27 2019-01-03 株式会社村田製作所 熱電変換モジュールおよび電子部品モジュール
KR102265762B1 (ko) * 2019-11-27 2021-06-15 한국세라믹기술원 적외선 차단 투명전극 점착제 및 이를 이용한 스마트 윈도우

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020175408A1 (en) * 2001-03-30 2002-11-28 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20040042181A1 (en) * 2002-06-26 2004-03-04 Kyocera Corporation Thermoelectric module and process for producing the same
US20070132043A1 (en) * 2002-01-16 2007-06-14 Keith Bradley Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices
US20080149914A1 (en) * 2006-12-22 2008-06-26 Qunano Ab Nanoelectronic structure and method of producing such
US20080178920A1 (en) * 2006-12-28 2008-07-31 Schlumberger Technology Corporation Devices for cooling and power
US20100162728A1 (en) * 2008-12-31 2010-07-01 Industrial Technology Research Institute Thermoelectric nanowire array with low heat leakage and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3600486B2 (ja) * 1999-08-24 2004-12-15 セイコーインスツル株式会社 熱電変換素子の製造方法
US20050060884A1 (en) * 2003-09-19 2005-03-24 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US6969679B2 (en) * 2003-11-25 2005-11-29 Canon Kabushiki Kaisha Fabrication of nanoscale thermoelectric devices
US8039726B2 (en) * 2005-05-26 2011-10-18 General Electric Company Thermal transfer and power generation devices and methods of making the same
WO2008060282A1 (en) * 2006-11-17 2008-05-22 General Electric Company Thermal transfer and power generation devices and methods of making the same
US7905013B2 (en) * 2007-06-04 2011-03-15 Sharp Laboratories Of America, Inc. Method for forming an iridium oxide (IrOx) nanowire neural sensor array
JP4925964B2 (ja) * 2007-08-06 2012-05-09 株式会社デンソー 積層型熱電変換素子及びその製造方法
FR2923601B1 (fr) * 2007-11-12 2010-01-01 Commissariat Energie Atomique Detecteur de rayonnement electromagnetique a connexion par nanofil et procede de realisation

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020175408A1 (en) * 2001-03-30 2002-11-28 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20070132043A1 (en) * 2002-01-16 2007-06-14 Keith Bradley Nano-electronic sensors for chemical and biological analytes, including capacitance and bio-membrane devices
US20040042181A1 (en) * 2002-06-26 2004-03-04 Kyocera Corporation Thermoelectric module and process for producing the same
US20080149914A1 (en) * 2006-12-22 2008-06-26 Qunano Ab Nanoelectronic structure and method of producing such
US20080178920A1 (en) * 2006-12-28 2008-07-31 Schlumberger Technology Corporation Devices for cooling and power
US20100162728A1 (en) * 2008-12-31 2010-07-01 Industrial Technology Research Institute Thermoelectric nanowire array with low heat leakage and manufacturing method thereof

Also Published As

Publication number Publication date
EP2671255A4 (en) 2015-10-28
CA2825888A1 (en) 2012-11-29
JP2014510396A (ja) 2014-04-24
EP2671255A1 (en) 2013-12-11
KR20140012073A (ko) 2014-01-29
BR112013019766A2 (pt) 2019-09-24
WO2012161757A1 (en) 2012-11-29

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Application publication date: 20131218