CN103457154B - With the integrated optical communication laser driver of preemphasis - Google Patents
With the integrated optical communication laser driver of preemphasis Download PDFInfo
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- CN103457154B CN103457154B CN201310383074.3A CN201310383074A CN103457154B CN 103457154 B CN103457154 B CN 103457154B CN 201310383074 A CN201310383074 A CN 201310383074A CN 103457154 B CN103457154 B CN 103457154B
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Abstract
The invention discloses a kind of integrated optical communication laser driver with preemphasis, relate to the integrated circuit (IC) design of the communications field, this laser driver comprises modulated data signal input, the first delay and running unit, modulated current driver element, the second delay and running unit, preemphasis driver element and laser assembly, and the input of the first delay and running unit, the second delay and running unit is all connected with modulated data signal input; The output of the first delay and running unit is connected with the modulated drive signal input port of modulated current driver element, and the output of the second delay and running unit is connected with the preemphasis driving signal input mouth of preemphasis driver element; Modulated current driver element is connected with preemphasis driver element, and modulated current driver element, preemphasis driver element are all connected with laser assembly.The electric current preemphasis that the present invention can realize laser driver exports, it is adjustable to export the size of modulated current, can also control the degree of depth of preemphasis.
Description
Technical field
The present invention relates to the integrated circuit (IC) design of the communications field, particularly relate to a kind of integrated optical communication laser driver with preemphasis.
Background technology
Laser driver is the Primary Component in optical communications module, for providing drive current for luminescent device.Under normal circumstances, laser driver synchronously reflects the situation of change of input modulating signal for the output waveform that modulated current drives.But, when high speed signal modulation, output signal the impact of the parasitic capacitance of cabling time delay and luminescent device itself due to modulated current, the deterioration exporting light eye pattern may be caused, in the transmitting procedure of signal, due to the decay of high frequency, the loss of signal integrity can be caused.In order to address this problem, usually before signal sends, preemphasis process can be done to signal, the high fdrequency component of promotion signal in advance, with the decay of compensating signal at transmitting procedure high frequency components.Therefore, the laser driver designing band preemphasis function is needed badly.
Summary of the invention
The object of the invention is the deficiency in order to overcome above-mentioned background technology, a kind of integrated optical communication laser driver with preemphasis is provided, the size that the electric current preemphasis that can not only realize laser driver exported, exported modulated current is adjustable, and can also control the degree of depth of preemphasis.
The invention provides a kind of integrated optical communication laser driver with preemphasis, it comprises power vd D, modulated data signal input Dat, first delay and running unit, modulated current driver element and laser assembly, modulated current driver element comprises modulated drive signal input port IN1, modulated current control port Imodctrl and modulated current output port Imodout, the input of the first delay and running unit is connected with modulated data signal input Dat, the output of the first delay and running unit is connected with the modulated drive signal input port IN1 of modulated current driver element, modulated current driver element is connected with laser assembly, it also comprises the second delay and running unit and preemphasis driver element, preemphasis driver element comprises preemphasis driving signal input mouth IN2, preemphasis severity control port Ipectrl and preemphasis output port Ipeout, the input of the second delay and running unit is connected with modulated data signal input Dat, the output of the second delay and running unit is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element, modulated current driver element is connected with preemphasis driver element, preemphasis driver element is connected with laser assembly, wherein:
Described first delay and running unit is made up of several inverter series, for realizing the time delay of modulation signal, amplification and driving, improves the driving force of modulation signal;
Described second delay and running unit is also made up of several inverter series, for carrying out time delay, amplification and driving to modulation signal, then converts preemphasized signal to;
Described modulated current driver element, for: convert time delay and the modulated current signal after amplifying to modulated current, modulated current is exported to laser assembly, and control by modulated current control port Imodctrl the intensity exporting modulated current;
Described preemphasis driver element, for: preemphasized signal is converted to preemphasis electric current and export, and control the intensity of preemphasis electric current by preemphasis severity control port Ipectrl, thus control the degree of depth of preemphasis;
Described modulated current driver element comprises the first nmos pass transistor M1, the second nmos pass transistor M2, the 3rd nmos pass transistor M3, the 4th nmos pass transistor M4, the grid of the first nmos pass transistor M1 is connected with drain electrode, and the drain electrode of the first nmos pass transistor M1 is also connected with the grid of the 3rd nmos pass transistor M3, the modulated current control port Imodctrl of modulated current driver element respectively; The source electrode of the first nmos pass transistor M1 is connected with the drain electrode of the second nmos pass transistor M2, and the grid of the second nmos pass transistor M2 meets power vd D, the source ground of the second nmos pass transistor M2; The drain electrode of the 3rd nmos pass transistor M3 is connected with the modulated current output port Imodout of modulated current driver element; The source electrode of the 3rd nmos pass transistor M3 connects the drain electrode of the 4th nmos pass transistor M4, and the grid of the 4th nmos pass transistor M4 is connected with the modulated drive signal input port IN1 of modulated current driver element, the source ground of the 4th nmos pass transistor M4;
Described preemphasis driver element comprises the 5th nmos pass transistor M5, the 6th nmos pass transistor M6, the 7th nmos pass transistor M7, the 8th nmos pass transistor M8, the 9th nmos pass transistor M9, the tenth nmos pass transistor M10, the first PMOS transistor M11, the second PMOS transistor M12, the grid of the 5th nmos pass transistor M5 is connected with drain electrode, and the drain electrode of the 5th nmos pass transistor M5 is also connected with the grid of the 7th nmos pass transistor M7, the grid of the 9th nmos pass transistor M9, the preemphasis severity control port Ipectrl of preemphasis driver element respectively; The source electrode of the 5th nmos pass transistor M5 is connected with the drain electrode of the 6th nmos pass transistor M6, the source electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of the 8th nmos pass transistor M8, the source electrode of the 9th nmos pass transistor M9 is connected with the drain electrode of the tenth nmos pass transistor M10, the grid of the 6th nmos pass transistor M6 and the grid of the 8th nmos pass transistor M8 all meet power vd D, and the grid of the tenth nmos pass transistor M10 is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element; The source grounding of the source electrode of the 6th nmos pass transistor M6, the source electrode of the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10; The drain electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of the first PMOS transistor M11, and the drain electrode of the first PMOS transistor M11 is connected with the grid of the first PMOS transistor M11, the grid of the second PMOS transistor M12 respectively; The source electrode of the first PMOS transistor M11 and the source electrode of the second PMOS transistor M12 all meet power vd D; The drain electrode of the second PMOS transistor M12 is connected with the drain electrode of the 9th nmos pass transistor M9, and is connected with the preemphasis output port Ipeout of preemphasis driver element simultaneously.
On the basis of technique scheme, in described modulated current driver element, the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 is the mirror image pipe of modulated current current mirror output, will input modulated current signal and amplify several times; Second nmos pass transistor M2 and the 4th nmos pass transistor M4 is MOS switch, coordinates the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 to export modulated current.
On the basis of technique scheme, in described modulated current driver element, the second nmos pass transistor M2 is set to often open, and the 4th nmos pass transistor M4 is controlled by the first delay and running unit, exports modulated current signal from the drain electrode of the 3rd nmos pass transistor M3.
On the basis of technique scheme, first nmos pass transistor M1 and the image ratio with the 3rd nmos pass transistor M3 in described modulated current driver element, with, the second nmos pass transistor M2 is identical with the image ratio of the 4th nmos pass transistor M4, and equaling 1:N, N is positive integer.
On the basis of technique scheme, in described preemphasis driver element, the 5th nmos pass transistor M5, the 7th nmos pass transistor M7, the 9th nmos pass transistor M9, the first PMOS transistor M11 and the second PMOS transistor M12 are the mirror image pipe of preemphasis electric current current mirror output, and the 6th nmos pass transistor M6, the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10 are MOS switch.
On the basis of technique scheme, described 6th nmos pass transistor M6 and the 8th nmos pass transistor M8 is set to often open, and the tenth nmos pass transistor M10 is controlled by the second delay and running unit.
On the basis of technique scheme, described 7th nmos pass transistor M7 and the 8th nmos pass transistor M8 is by after input current one to mirror image, by the first PMOS transistor M11 and the second PMOS transistor M12 amplified current, produce a direct current in the drain electrode of the second PMOS transistor M12, after the current subtraction drained with the 9th nmos pass transistor M9, output to laser assembly.
On the basis of technique scheme, image ratio between described 5th nmos pass transistor M5, the 7th nmos pass transistor M7, the 9th nmos pass transistor M9, with, image ratio between 6th nmos pass transistor M6, the 8th nmos pass transistor M8, the tenth nmos pass transistor M10 is identical, and be 1:1:M, the image ratio of the first PMOS transistor M11, the second PMOS transistor M12 is 1:M, M is positive integer.
On the basis of technique scheme, number, the parameter of the number of inverter in described second delay and running unit, parameter and inverter in the first delay and running unit are identical.
On the basis of technique scheme, number, the parameter of the number of inverter in described second delay and running unit, parameter and inverter in the first delay and running unit are different.
Compared with prior art, advantage of the present invention is as follows:
Integrated optical communication laser driver provided by the invention comprises the first delay and running unit, modulated current driver element, the second delay and running unit, preemphasis driver element and laser assembly, first delay and running unit realizes the time delay of modulation signal, amplification and driving, modulated current driver element exports to laser assembly after converting time delay and the modulated current signal after amplifying to modulated current, and controls the intensity exporting modulated current; Second delay and running unit, by after modulation signal time delay, amplification and driving, converts preemphasized signal to, and preemphasized signal is converted to preemphasis electric current and exports by preemphasis driver element, and controls the intensity of preemphasis electric current, thus controls the degree of depth of preemphasis.Therefore, the electric current preemphasis that the present invention can not only realize laser driver exports, it is adjustable to export the size of modulated current, and can also control the degree of depth of preemphasis.
Accompanying drawing explanation
Fig. 1 is the structured flowchart of the integrated optical communication laser driver with preemphasis in the embodiment of the present invention.
Fig. 2 is the circuit diagram of the first delay and running unit in the embodiment of the present invention.
Fig. 3 is the circuit diagram of modulated current driver element in the embodiment of the present invention.
Fig. 4 is the circuit diagram of preemphasis driver element in the embodiment of the present invention.
Fig. 5 is the oscillogram that laser driver exports modulated current under normal circumstances.
Fig. 6 is the oscillogram output modulated current in Fig. 5 being deducted a direct current.
Fig. 7 produces one by a small margin and the oscillogram of the contrary output modulated current mirror image of phase place in the embodiment of the present invention.
Fig. 8 is the schematic diagram with the addition of waveforms of Fig. 6 after the waveform time delay by Fig. 7.
Embodiment
Below in conjunction with drawings and the specific embodiments, the present invention is described in further detail.
Shown in Figure 1, the embodiment of the present invention provides a kind of integrated optical communication laser driver with preemphasis, comprise power vd D, modulated data signal input Dat, first delay and running unit, modulated current driver element, second delay and running unit, preemphasis driver element and laser assembly, modulated current driver element comprises modulated drive signal input port IN1, modulated current control port Imodctrl and modulated current output port Imodout, preemphasis driver element comprises preemphasis driving signal input mouth IN2, preemphasis severity control port Ipectrl and preemphasis output port Ipeout, first delay and running unit, the input of the second delay and running unit is all connected with modulated data signal input Dat, the output of the first delay and running unit is connected with the modulated drive signal input port IN1 of modulated current driver element, and the output of the second delay and running unit is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element, modulated current driver element is connected with preemphasis driver element, and modulated current driver element, preemphasis driver element are all connected with laser assembly, wherein:
Shown in Figure 2, the first delay and running unit is made up of several inverter series, for realizing the time delay of modulation signal, amplification and driving, improves the driving force of modulation signal;
Second delay and running unit is also made up of several inverter series, for carrying out time delay, amplification and driving to modulation signal, then converts preemphasized signal to; The number of the number of inverter in the second delay and running unit, parameter and inverter in the first delay and running unit, parameter can be identical, also can be different;
Modulated current driver element, for: convert time delay and the modulated current signal after amplifying to modulated current, modulated current is exported to laser assembly, and control by modulated current control port Imodctrl the intensity exporting modulated current;
Preemphasis driver element, for: preemphasized signal is converted to preemphasis electric current and export, and control the intensity of preemphasis electric current by preemphasis severity control port Ipectrl, thus control the degree of depth of preemphasis.
Shown in Figure 3, modulated current driver element comprises the first nmos pass transistor M1, the second nmos pass transistor M2, the 3rd nmos pass transistor M3, the 4th nmos pass transistor M4, the grid of the first nmos pass transistor M1 is connected with drain electrode, and the drain electrode of the first nmos pass transistor M1 is also connected with the grid of the 3rd nmos pass transistor M3, the modulated current control port Imodctrl of modulated current driver element respectively; The source electrode of the first nmos pass transistor M1 is connected with the drain electrode of the second nmos pass transistor M2, and the grid of the second nmos pass transistor M2 meets power vd D, the source ground of the second nmos pass transistor M2; The drain electrode of the 3rd nmos pass transistor M3 is connected with the modulated current output port Imodout of modulated current driver element; The source electrode of the 3rd nmos pass transistor M3 connects the drain electrode of the 4th nmos pass transistor M4, and the grid of the 4th nmos pass transistor M4 is connected with the modulated drive signal input port IN1 of modulated current driver element, the source ground of the 4th nmos pass transistor M4.
Shown in Figure 4, preemphasis driver element comprises the 5th nmos pass transistor M5, the 6th nmos pass transistor M6, the 7th nmos pass transistor M7, the 8th nmos pass transistor M8, the 9th nmos pass transistor M9, the tenth nmos pass transistor M10, the first PMOS transistor M11, the second PMOS transistor M12, the grid of the 5th nmos pass transistor M5 is connected with drain electrode, and the drain electrode of the 5th nmos pass transistor M5 is also connected with the grid of the 7th nmos pass transistor M7, the grid of the 9th nmos pass transistor M9, the preemphasis severity control port Ipectrl of preemphasis driver element respectively; The source electrode of the 5th nmos pass transistor M5 is connected with the drain electrode of the 6th nmos pass transistor M6, the source electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of the 8th nmos pass transistor M8, the source electrode of the 9th nmos pass transistor M9 is connected with the drain electrode of the tenth nmos pass transistor M10, the grid of the 6th nmos pass transistor M6 and the grid of the 8th nmos pass transistor M8 all meet power vd D, and the grid of the tenth nmos pass transistor M10 is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element; The source grounding of the source electrode of the 6th nmos pass transistor M6, the source electrode of the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10; The drain electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of the first PMOS transistor M11, and the drain electrode of the first PMOS transistor M11 is connected with the grid of the first PMOS transistor M11, the grid of the second PMOS transistor M12 respectively; The source electrode of the first PMOS transistor M11 and the source electrode of the second PMOS transistor M12 all meet power vd D; The drain electrode of the second PMOS transistor M12 is connected with the drain electrode of the 9th nmos pass transistor M9, and is connected with the preemphasis output port Ipeout of preemphasis driver element simultaneously.
The operation principle of the embodiment of the present invention is elaborated as follows:
Shown in Figure 3, in modulated current driver element, the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 is the mirror image pipe of modulated current current mirror output, will input modulated current signal and amplify several times; Second nmos pass transistor M2 and the 4th nmos pass transistor M4 is MOS switch, coordinates the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 to export modulated current.For improving the current mirror precision of the first nmos pass transistor M1 and the 3rd nmos pass transistor M3, second nmos pass transistor M2 is set to often open, 4th nmos pass transistor M4 is then controlled by the first delay and running unit, exports modulated current signal from the drain electrode of the 3rd nmos pass transistor M3.For realizing the object controlling larger electric current output with less control electric current, first nmos pass transistor M1 and the image ratio with the 3rd nmos pass transistor M3, with, the second nmos pass transistor M2 is identical with the image ratio of the 4th nmos pass transistor M4, and equaling 1:N, N is positive integer.
Shown in Figure 4, in preemphasis driver element, the 5th nmos pass transistor M5, the 7th nmos pass transistor M7, the 9th nmos pass transistor M9, the first PMOS transistor M11 and the second PMOS transistor M12 are the mirror image pipe of preemphasis electric current current mirror output, and the 6th nmos pass transistor M6, the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10 are MOS switch.For improving the current mirror precision of the 5th nmos pass transistor M5, the 7th nmos pass transistor M7 and the 9th nmos pass transistor M9,6th nmos pass transistor M6 and the 8th nmos pass transistor M8 is set to often open, and the tenth nmos pass transistor M10 is then controlled by the second delay and running unit.7th nmos pass transistor M7 and the 8th nmos pass transistor M8 is by after input current one to mirror image, by the first PMOS transistor M11 and the second PMOS transistor M12 amplified current, produce a direct current in the drain electrode of the second PMOS transistor M12, after the current subtraction drained with the 9th nmos pass transistor M9, output to laser assembly.For realizing the controlled object of the preemphasis degree of depth, image ratio between 5th nmos pass transistor M5, the 7th nmos pass transistor M7, the 9th nmos pass transistor M9, with, image ratio between 6th nmos pass transistor M6, the 8th nmos pass transistor M8, the tenth nmos pass transistor M10 is identical, and be 1:1:M, the image ratio of the first PMOS transistor M11, the second PMOS transistor M12 is 1:M, M is positive integer.
Laser driver output modulated current waveform is under normal circumstances shown in Figure 5, and for realizing preemphasis function, first need output modulated current under normal circumstances to deduct a direct current, concrete waveform is shown in Figure 6.Usually need to coordinate bias current (bias current does not draw) because modulated current exports, the laser in fact for luminescence there will not be negative electric current, but is reduced to replace by the bias current of laser by reality.For realizing preemphasis function, next needs generation one by a small margin and the contrary output modulated current mirror image of phase place, and concrete waveform is shown in Figure 7.For realizing preemphasis function, finally also need after the waveform time delay in Fig. 7, with the addition of waveforms in Fig. 6, the final waveform realized is shown in Figure 8.
Those skilled in the art can carry out various modifications and variations to the embodiment of the present invention, if these amendments and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then these revise and modification also within protection scope of the present invention.
The prior art that the content do not described in detail in specification is known to the skilled person.
Claims (10)
1. the integrated optical communication laser driver with preemphasis, it comprises power vd D, modulated data signal input Dat, first delay and running unit, modulated current driver element and laser assembly, modulated current driver element comprises modulated drive signal input port IN1, modulated current control port Imodctrl and modulated current output port Imodout, the input of the first delay and running unit is connected with modulated data signal input Dat, the output of the first delay and running unit is connected with the modulated drive signal input port IN1 of modulated current driver element, modulated current driver element is connected with laser assembly, it is characterized in that: it also comprises the second delay and running unit and preemphasis driver element, preemphasis driver element comprises preemphasis driving signal input mouth IN2, preemphasis severity control port Ipectrl and preemphasis output port Ipeout, the input of the second delay and running unit is connected with modulated data signal input Dat, the output of the second delay and running unit is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element, modulated current driver element is connected with preemphasis driver element, preemphasis driver element is connected with laser assembly, wherein:
Described first delay and running unit is made up of several inverter series, for realizing the time delay of modulation signal, amplification and driving, improves the driving force of modulation signal;
Described second delay and running unit is also made up of several inverter series, for carrying out time delay, amplification and driving to modulation signal, then converts preemphasized signal to;
Described modulated current driver element, for: convert time delay and the modulated current signal after amplifying to modulated current, modulated current is exported to laser assembly, and control by modulated current control port Imodctrl the intensity exporting modulated current;
Described preemphasis driver element, for: preemphasized signal is converted to preemphasis electric current and export, and control the intensity of preemphasis electric current by preemphasis severity control port Ipectrl, thus control the degree of depth of preemphasis;
Described modulated current driver element comprises the first nmos pass transistor M1, bi-NMOS transistor M2, the 3rd nmos pass transistor M3, the 4th nmos pass transistor M4, the grid of the first nmos pass transistor M1 is connected with drain electrode, and the drain electrode of the first nmos pass transistor M1 is also connected with the grid of the 3rd nmos pass transistor M3, the modulated current control port Imodctrl of modulated current driver element respectively; The source electrode of the first nmos pass transistor M1 is connected with the drain electrode of the second nmos pass transistor M2, and the grid of the second nmos pass transistor M2 meets power vd D, the source ground of the second nmos pass transistor M2; The drain electrode of the 3rd nmos pass transistor M3 is connected with the modulated current output port Imodout of modulated current driver element; The source electrode of the 3rd nmos pass transistor M3 connects the drain electrode of the 4th nmos pass transistor M4, and the grid of the 4th nmos pass transistor M4 is connected with the modulated drive signal input port IN1 of modulated current driver element, the source ground of the 4th nmos pass transistor M4;
Described preemphasis driver element comprises the 5th nmos pass transistor M5, the 6th nmos pass transistor M6, the 7th nmos pass transistor M7, the 8th nmos pass transistor M8, the 9th nmos pass transistor M9, the tenth nmos pass transistor M10, the first PMOS transistor M11, the second PMOS transistor M12, the grid of the 5th nmos pass transistor M5 is connected with drain electrode, and the drain electrode of the 5th nmos pass transistor M5 is also connected with the grid of the 7th nmos pass transistor M7, the grid of the 9th nmos pass transistor M9, the preemphasis severity control port Ipectrl of preemphasis driver element respectively; The source electrode of the 5th nmos pass transistor M5 is connected with the drain electrode of the 6th nmos pass transistor M6, the source electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of the 8th nmos pass transistor M8, the source electrode of the 9th nmos pass transistor M9 is connected with the drain electrode of the tenth nmos pass transistor M10, the grid of the 6th nmos pass transistor M6 and the grid of the 8th nmos pass transistor M8 all meet power vd D, and the grid of the tenth nmos pass transistor M10 is connected with the preemphasis driving signal input mouth IN2 of preemphasis driver element; The source grounding of the source electrode of the 6th nmos pass transistor M6, the source electrode of the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10; The drain electrode of the 7th nmos pass transistor M7 is connected with the drain electrode of the first PMOS transistor M11, and the drain electrode of the first PMOS transistor M11 is connected with the grid of the first PMOS transistor M11, the grid of the second PMOS transistor M12 respectively; The source electrode of the first PMOS transistor M11 and the source electrode of the second PMOS transistor M12 all meet power vd D; The drain electrode of the second PMOS transistor M12 is connected with the drain electrode of the 9th nmos pass transistor M9, and is connected with the preemphasis output port Ipeout of preemphasis driver element simultaneously.
2. the integrated optical communication laser driver of band preemphasis as claimed in claim 1, it is characterized in that: in described modulated current driver element, the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 is the mirror image pipe of modulated current current mirror output, modulated current signal will be inputted and amplify several times; Second nmos pass transistor M2 and the 4th nmos pass transistor M4 is MOS switch, coordinates the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 to export modulated current.
3. the integrated optical communication laser driver of band preemphasis as claimed in claim 2, it is characterized in that: in described modulated current driver element, the second nmos pass transistor M2 is set to often open, 4th nmos pass transistor M4 is controlled by the first delay and running unit, exports modulated current signal from the drain electrode of the 3rd nmos pass transistor M3.
4. the integrated optical communication laser driver of band preemphasis as claimed in claim 1, it is characterized in that: the image ratio of the first nmos pass transistor M1 and the 3rd nmos pass transistor M3 in described modulated current driver element, with, second nmos pass transistor M2 is identical with the image ratio of the 4th nmos pass transistor M4, and equaling 1:N, N is positive integer.
5. the integrated optical communication laser driver of band preemphasis as claimed in claim 1, it is characterized in that: in described preemphasis driver element, the 5th nmos pass transistor M5, the 7th nmos pass transistor M7, the 9th nmos pass transistor M9, the first PMOS transistor M11 and the second PMOS transistor M12 are the mirror image pipe of preemphasis electric current current mirror output, the 6th nmos pass transistor M6, the 8th nmos pass transistor M8 and the tenth nmos pass transistor M10 are MOS switch.
6. the integrated optical communication laser driver of band preemphasis as claimed in claim 1, is characterized in that: described 6th nmos pass transistor M6 and the 8th nmos pass transistor M8 is set to often open, and the tenth nmos pass transistor M10 is controlled by the second delay and running unit.
7. the integrated optical communication laser driver of band preemphasis as claimed in claim 6, it is characterized in that: described 7th nmos pass transistor M7 and the 8th nmos pass transistor M8 is by after input current one to mirror image, by the first PMOS transistor M11 and the second PMOS transistor M12 amplified current, produce a direct current in the drain electrode of the second PMOS transistor M12, after the current subtraction drained with the 9th nmos pass transistor M9, output to laser assembly.
8. the integrated optical communication laser driver of band preemphasis as claimed in claim 1, it is characterized in that: the image ratio between described 5th nmos pass transistor M5, the 7th nmos pass transistor M7, the 9th nmos pass transistor M9, with, image ratio between 6th nmos pass transistor M6, the 8th nmos pass transistor M8, the tenth nmos pass transistor M10 is identical, and be 1:1:M, the image ratio of the first PMOS transistor M11, the second PMOS transistor M12 is 1:M, M is positive integer.
9. the integrated optical communication laser driver of the band preemphasis according to any one of claim 1 to 8, is characterized in that: number, the parameter of the number of inverter in described second delay and running unit, parameter and inverter in the first delay and running unit are identical.
10. the integrated optical communication laser driver of the band preemphasis according to any one of claim 1 to 8, is characterized in that: number, the parameter of the number of inverter in described second delay and running unit, parameter and inverter in the first delay and running unit are different.
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| CN110086082B (en) * | 2019-04-09 | 2020-08-25 | 华中师范大学 | High-speed driving circuit of capacitive coupling pre-emphasis VCSEL laser |
| CN110233420B (en) * | 2019-07-04 | 2023-12-19 | 湖北秉正讯腾科技有限公司 | Laser driving circuit and laser device |
| CN114094436B (en) * | 2022-01-19 | 2022-05-17 | 长芯盛（武汉）科技有限公司 | Driving device and method for processing driving current |
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