CN103456674A - 深沟槽形貌分析样品的制备方法 - Google Patents
深沟槽形貌分析样品的制备方法 Download PDFInfo
- Publication number
- CN103456674A CN103456674A CN2012101811902A CN201210181190A CN103456674A CN 103456674 A CN103456674 A CN 103456674A CN 2012101811902 A CN2012101811902 A CN 2012101811902A CN 201210181190 A CN201210181190 A CN 201210181190A CN 103456674 A CN103456674 A CN 103456674A
- Authority
- CN
- China
- Prior art keywords
- deep trench
- silicon dioxide
- low
- mode
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Sampling And Sample Adjustment (AREA)
Abstract
Description
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012101811902A CN103456674A (zh) | 2012-06-04 | 2012-06-04 | 深沟槽形貌分析样品的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2012101811902A CN103456674A (zh) | 2012-06-04 | 2012-06-04 | 深沟槽形貌分析样品的制备方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103456674A true CN103456674A (zh) | 2013-12-18 |
Family
ID=49738904
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012101811902A Pending CN103456674A (zh) | 2012-06-04 | 2012-06-04 | 深沟槽形貌分析样品的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103456674A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111146272A (zh) * | 2019-12-26 | 2020-05-12 | 上海华虹宏力半导体制造有限公司 | 超级结器件及其制造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5914523A (en) * | 1998-02-17 | 1999-06-22 | National Semiconductor Corp. | Semiconductor device trench isolation structure with polysilicon bias voltage contact |
US6468853B1 (en) * | 2000-08-18 | 2002-10-22 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating a shallow trench isolation structure with reduced local oxide recess near corner |
KR20040091978A (ko) * | 2003-04-23 | 2004-11-03 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 제조방법 |
CN101872739A (zh) * | 2009-04-23 | 2010-10-27 | 上海华虹Nec电子有限公司 | 沟槽的填充方法 |
CN102054736A (zh) * | 2009-10-28 | 2011-05-11 | 上海华虹Nec电子有限公司 | 高深宽比沟槽隔离区的填充方法 |
-
2012
- 2012-06-04 CN CN2012101811902A patent/CN103456674A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5914523A (en) * | 1998-02-17 | 1999-06-22 | National Semiconductor Corp. | Semiconductor device trench isolation structure with polysilicon bias voltage contact |
US6468853B1 (en) * | 2000-08-18 | 2002-10-22 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating a shallow trench isolation structure with reduced local oxide recess near corner |
KR20040091978A (ko) * | 2003-04-23 | 2004-11-03 | 주식회사 하이닉스반도체 | 반도체 소자의 소자분리막 제조방법 |
CN101872739A (zh) * | 2009-04-23 | 2010-10-27 | 上海华虹Nec电子有限公司 | 沟槽的填充方法 |
CN102054736A (zh) * | 2009-10-28 | 2011-05-11 | 上海华虹Nec电子有限公司 | 高深宽比沟槽隔离区的填充方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111146272A (zh) * | 2019-12-26 | 2020-05-12 | 上海华虹宏力半导体制造有限公司 | 超级结器件及其制造方法 |
CN111146272B (zh) * | 2019-12-26 | 2023-07-04 | 上海华虹宏力半导体制造有限公司 | 超级结器件及其制造方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11703643B2 (en) | Integrated photonics including waveguiding material | |
TWI539521B (zh) | 在矽溝槽中的三族氮化物裝置 | |
CN107771352B (zh) | 设计的硅衬底上的gan器件 | |
US7399686B2 (en) | Method and apparatus for making coplanar dielectrically-isolated regions of different semiconductor materials on a substrate | |
EP2709142B1 (en) | Method for forming a PN superjunction | |
CN104025260B (zh) | 氮化物半导体元件结构体及其制造方法 | |
US9780173B2 (en) | High aspect ratio trapping semiconductor with uniform height and isolated from bulk substrate | |
KR102355273B1 (ko) | 헤테로지니어스 반도체 재료 통합 기술들 | |
CN107949914A (zh) | 具有凸起掺杂晶体结构的半导体器件 | |
CN105702736A (zh) | 屏蔽栅-深沟槽mosfet的屏蔽栅氧化层及其形成方法 | |
JP2013110238A5 (zh) | ||
CN102208336A (zh) | 形成交替排列的p型和n型半导体薄层的工艺方法 | |
WO2015100245A1 (en) | Flexible single-crystalline semiconductor device and fabrication methods thereof | |
CN101996999A (zh) | 一种具有扩展型沟槽的dram结构及其制作方法 | |
CN103137434A (zh) | 硅基GaN薄膜的制造方法 | |
CN102468176A (zh) | 超级结器件制造纵向区的方法 | |
CN105575781A (zh) | 沟槽型超级结的制造方法 | |
CN104681494A (zh) | 一种半导体存储器件及其制备方法 | |
CN103050594B (zh) | 氮化物半导体结构的制造方法 | |
CN101989552B (zh) | 超级结mos管的纵向区的制造方法 | |
CN103456674A (zh) | 深沟槽形貌分析样品的制备方法 | |
CN105789133B (zh) | 一种闪存存储单元及制作方法 | |
CN101692434B (zh) | 绝缘体上硅的深槽隔离结构的填充方法 | |
CN102487032A (zh) | 浅沟槽隔离结构的形成方法 | |
US20160155734A1 (en) | Vertical transistor with flashover protection |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140120 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20140120 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20131218 |