CN103456660A - Plasma reinforcement cleaning device and system and method for cleaning wafers - Google Patents
Plasma reinforcement cleaning device and system and method for cleaning wafers Download PDFInfo
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- CN103456660A CN103456660A CN201210183524XA CN201210183524A CN103456660A CN 103456660 A CN103456660 A CN 103456660A CN 201210183524X A CN201210183524X A CN 201210183524XA CN 201210183524 A CN201210183524 A CN 201210183524A CN 103456660 A CN103456660 A CN 103456660A
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Abstract
The invention discloses a plasma reinforcement cleaning device and system and a method for cleaning wafers. When the plasma reinforcement cleaning device with the diameter smaller than that of the wafers is utilized to clean the wafers, especially cleaning fluorine residue, heat can be quickly radiated. Furthermore, small-area cleaning can guarantee that the impurities in cleaned areas can be removed clearly, wet method cleaning is avoided, the cleaned particles and the fluorine residues can be exhausted by peripheral pipelines timely, the cleaning quality is greatly improved, the effects of the fringe effect are reduced, the damage to a low K medium layer is avoided in cleaning, and risks in cleaning are greatly reduced.
Description
Technical field
The present invention relates to integrated circuit and manufacture field, particularly a kind of plasma strengthens the method for cleaning device and cleaning wafer.
Background technology
In semi-conductive manufacture process; inevitably having a large amount of particulate (particle) produces; usually these particulates can be given and discharge by the air-flow (downflow) circulated downwards in equipment; but still have the surface that some particulates are adsorbed on wafer, these particulates are all to need to remove usually.
On the other hand, in the processing procedure process, need to touch some fluorine-containing materials, the fluorine ion produced after fluorine-containing material ionization can be combined with gaseous matter and be adsorbed onto on wafer, forms fluorine-containing residue.These materials must be got rid of and can carry out follow-up making technology, otherwise will affect the quality of product.
Along with constantly dwindling of the size of device own and interconnection line distance, various particulates and fluorine-containing residue (F-based residua) more and more become the key factor of killing and wounding yield, and can address this problem efficiently be a huge challenge in the industry.
In existing technique, common method is that using plasma strengthens cleaning, and plasma is a kind of neutrality, high-octane ionized gas, and it can optionally remove corresponding particulate and fluorine-containing residue.As shown in Figure 1, it strengthens for existing technique applying plasma the schematic diagram cleaned.Visible; existing technique is that the plasma that simultaneously carries out gross area on the surface of whole wafer strengthens cleaning; this large-area cleaning method can not reach a cleaning performance preferably; impurity is difficult for removing clean; usually also need to carry out the wet-cleaned process, simultaneously, because the temperature of plasma is higher; the cleaning of gross area can not be dispelled the heat in time, and edge effect is large.This all can be to each layer of below, and especially low K dielectric layer produces very large harmful effect, even destroys low K dielectric layer.
Summary of the invention
The object of the present invention is to provide a kind of plasma to strengthen the method for cleaning device and cleaning wafer, to solve the available technology adopting plasma, to strengthen while cleaning efficiency low and low K dielectric layer is had to dysgenic problem.
For solving the problems of the technologies described above, the invention provides a kind of plasma and strengthen cleaning device, comprising:
One plasma pipeline, in order to transmit plasma, described plasma channel diameter is less than pending diameter wafer;
One peripheral conduits, material after cleaning in order to transmission, described peripheral conduits is surrounded described plasma channel.
Further, for described plasma, strengthen cleaning device, also comprise a metallic cable layer, described metallic cable layer is between described plasma channel and described peripheral conduits.
Further, for described plasma, strengthen cleaning device, described metallic cable layer is cylindric.
Further, for described plasma, strengthen cleaning device, also comprise a protective layer, described protective layer is between described plasma channel and metallic cable layer.
Further, for described plasma, strengthen cleaning device, the thickness of described protective layer is 0.01mm ~ 2mm.
Further, for described plasma, strengthen cleaning device, described peripheral conduits be shaped as ring-like tubular.
Further, for described plasma, strengthen cleaning device, the internal diameter of described peripheral conduits is 0.1mm ~ 10mm, and external diameter is 0.2mm ~ 50mm.
Further, for described plasma, strengthen cleaning device, being shaped as of described plasma channel is cylindric.
Further, for described plasma, strengthen cleaning device, the diameter of described plasma channel is 0.1mm ~ 5mm.
Further, for described plasma, strengthen cleaning device, it is characterized in that described peripheral conduits, plasma channel and metallic cable layer center conllinear.
The invention provides a kind of plasma and strengthen purging system, comprising:
Plasma as above strengthens cleaning device;
One reaction chamber; One plasma generator;
Wherein, described gas ions strengthens the inside that cleaning device is positioned at described reaction chamber; Described reaction chamber has internal interface, external interface and outlet; The output of described gas ions generator is connected with the external interface of reaction chamber, described plasma channel is connected with the internal interface of reaction chamber, the plasma provided for the output that receives the gas ions generator, described peripheral conduits is connected with the outlet of reaction chamber, for discharging the material after cleaning.
Further, for described plasma, strengthen purging system, the quantity that described gas ions strengthens cleaning device is more than or equal to one.
The invention provides and a kind ofly utilize above-mentioned plasma to strengthen the method that cleaning device carries out cleaning wafer, it is characterized in that, comprising:
Pending wafer is positioned over to described gas ions and strengthens the cleaning device below;
Pass into plasma in described plasma channel;
The described plasma that relatively moves strengthens cleaning device and wafer.
Further, for the method for described cleaning wafer, described wafer is positioned over described gas ions and strengthens cleaning device below 0.1mm ~ 50mm.
Further, for the method for described cleaning wafer, described plasma comprises: nitrogen, carbon dioxide, methane, oxygen, one or more in hydrogen.
Further, for the method for described cleaning wafer, the flow of described plasma is all 1sccm ~ 1000sccm.
Further, for the method for described cleaning wafer, the relative moving speed that described plasma strengthens cleaning device and wafer is 1mm/s ~ 200mm/s.
The invention provides and a kind ofly utilize above-mentioned plasma to strengthen the method that purging system carries out cleaning wafer, it is characterized in that, comprising:
Be written into pending wafer in described reaction chamber, and be positioned over described gas ions enhancing cleaning device below;
Described plasma generator produces plasma, and by external interface and the internal interface of reaction chamber, plasma is passed into to described plasma channel;
The described plasma that relatively moves strengthens cleaning device and wafer.
Further, for the method for described cleaning wafer, described wafer is positioned over described gas ions and strengthens cleaning device below 0.1mm ~ 50mm.
Further, for the method for described cleaning wafer, described plasma comprises: nitrogen, carbon dioxide, methane, oxygen, one or more in hydrogen.
Further, for the method for described cleaning wafer, the flow of described plasma is all 1sccm ~ 1000sccm.
Further, for the method for described cleaning wafer, the relative moving speed that described plasma strengthens cleaning device and wafer is 1mm/s ~ 200mm/s.
Compared with prior art, at plasma provided by the invention, strengthen in the method for cleaning device and cleaning wafer, employing has the plasma enhancing cleaning device that is less than diameter wafer wafer is cleaned, especially fluorine residue is cleaned, be conducive to distributing rapidly of heat, and small size cleans can guarantee that the regional Impurity removal cleaned is clean, do not need to carry out wet-cleaned, peripheral conduits can be discharged the particulate and the fluorine residue that clean timely, improved greatly the quality of cleaning, reduced the impact of edge effect, thereby while having avoided cleaning to the destruction of low K dielectric layer, greatly reduce the risk while cleaning.
The accompanying drawing explanation
Fig. 1 strengthens for existing plasma in process the schematic diagram cleaned;
Fig. 2 is the generalized section that embodiment of the present invention plasma strengthens cleaning device;
Fig. 3 is the schematic top plan view that embodiment of the present invention plasma strengthens cleaning device;
Fig. 4 is the schematic diagram that embodiment of the present invention plasma strengthens the cleaning device cleaning wafer;
Fig. 5 is the structural representation that embodiment of the present invention plasma strengthens purging system.
Embodiment
The method that plasma provided by the invention is strengthened to cleaning device, system and cleaning wafer below in conjunction with the drawings and specific embodiments is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts very the form of simplifying, only in order to convenient, the purpose of the aid illustration embodiment of the present invention lucidly.
Embodiment mono-
Please refer to Fig. 2, a kind of plasma strengthens cleaning device, and for the particulate on cleaning wafer and fluorine residue thing, it comprises:
One peripheral conduits 1, the material after cleaning as transmission; One plasma pipeline 2, the passage of input plasma during as cleaning; One metallic cable layer 3, as producing a confining magnetic field, in order to improve the cleaning efficiency of plasma.Wherein, described peripheral conduits 1 is surrounded described plasma channel 2; The diameter of described peripheral conduits 1 and the diameter of plasma channel are less than the diameter of pending wafer, and described metallic cable layer 3 is between described peripheral conduits 1 and plasma channel 2.Described plasma channel 2 can be connected with the pipeline (not shown) of an input plasma, described peripheral conduits 1 can or be discharged the port (not shown) with an output channel and is connected, its concrete shape, size can be done accommodation according to wafer to be cleaned, does not do restriction herein.
The shape of described peripheral conduits 1, plasma channel 2 and metallic cable layer 3 can be tubular, column etc.Preferably, described peripheral conduits 1 is ring-like tubular, comprises inside and outside cylinder, and described inner core is nested in described urceolus, and the internal diameter of described peripheral conduits 1 (being inner diameter of steel flue) is 0.1mm ~ 10mm, and external diameter (being the urceolus diameter) is 0.2mm ~ 50mm; Described plasma channel 2 and metallic cable layer 3 are cylindric, and the diameter of described plasma channel is 0.1mm ~ 5mm.
The material of described peripheral conduits 1 can be the megohmite insulants such as quartz; The material of described plasma channel 2 can be a kind of or combination in titanium, tantalum, nickel, copper, aluminium, tungsten, silver, gold; The material of described metallic cable layer 3 can be a kind of or combination in copper, aluminium, tungsten, silver, gold.
Please refer to vertical view as shown in Figure 3, preferred, described peripheral conduits 1, plasma channel 2 and metallic cable layer 3 center conllinear.Plasma of the present invention strengthens cleaning device, also comprises a protective layer 4, for the protection of the metallic cable layer, prevents oxidized etc.Described protective layer 4 is between described plasma channel 2 and metallic cable layer 3.The thickness of described protective layer 4 is 0.01mm ~ 2mm.
The present embodiment provides a kind of and utilizes above-mentioned plasma to strengthen the method that cleaning device carries out cleaning wafer.
Please refer to Fig. 4, pending wafer 6 is positioned over to described gas ions and strengthens cleaning device 5 belows, described wafer 6 surfaces have various particulates and fluorine residue thing 12, concrete, and described wafer 6 is positioned over described gas ions and strengthens cleaning device below 0.1mm ~ 50mm.
Pass into plasma in described plasma channel 2, described plasma passes into described plasma channel 2 through a pipeline (not shown), and described plasma comprises: nitrogen (N
2), carbon dioxide (CO
2), methane (CH
4), oxygen (O
2), hydrogen (H
2) in one or more, the flow of above-mentioned various gases is all 1sccm ~ 1000sccm.Described peripheral conduits 1 (not shown) that is connected with a discharge line.
The metallic cable layer 3 access direct current that strengthen cleaning device in described gas ions are to produce confining magnetic field, and passing into current strength can be 0 ~ 100A.
The described plasma that relatively moves strengthens cleaning device 5 and wafer 6, can move separately described plasma and strengthen cleaning device 5 or wafer 6, but also both moves simultaneously, and preferred, reaching described relative moving speed is 1mm/s ~ 200mm/s.
As seen from Figure 4, plasma arrives the surface of wafer 6 by plasma channel 2, the various particulates on wafer 6 surfaces and fluorine residue thing 12, after the plasma contact, the surface that breaks away from wafer 6, now, because peripheral conduits 1 has suction, the particulate and 12 dispatch of fluorine residue thing that excite are gone out.Because cleaning area is little, can guarantee that the regional impurity cleaned all is removed in the present embodiment, not need to carry out the wet-cleaned in traditional handicraft.
Please continue to refer to Fig. 4, plasma strengthens cleaning and can make the below of plasma channel 2 high-temperature area 8 occur, yet because applying plasma of the present invention strengthens the small-sized of cleaning device 5, its heat make described high-temperature area 8 compare wafer 6 very little, therefore can just can distribute fully in a less edge 9.
As seen from the above analysis, the cleaning method of the present embodiment cleans very complete, can remove common particulate and fluorine residue etc. and be difficult to the impurity of removing, and does not need through the wet-cleaned process, and heat effects is also very little, therefore can not affect below each layer, especially low K dielectric layer.
Embodiment bis-
Please refer to Fig. 5, the invention provides a kind of plasma and strengthen purging system, comprising: plasma as above strengthens cleaning device 5, one reaction chamber 11, one plasma generators 10.Wherein, described gas ions strengthens the inside that cleaning device 5 is positioned at described reaction chamber 11; Described reaction chamber 11 has internal interface, external interface and outlet; The output 12 of described gas ions generator 10 is connected with the external interface of reaction chamber 11, described plasma channel 2 is connected with the internal interface of reaction chamber by a pipeline 13, the plasma provided for the output 12 that receives gas ions generator 10, described peripheral conduits 1 is connected with the outlet of reaction chamber 11 by another pipeline 14, for discharging the material after cleaning.
The described plasma of the present embodiment strengthens purging system, and the quantity that described gas ions strengthens cleaning device 5 is more than or equal to one.
The present embodiment provides a kind of above-mentioned plasma to strengthen the method that purging system carries out cleaning wafer.The difference of the method for the cleaning wafer in this method and embodiment mono-is: described plasma generator 10 produces plasmas, through output 12 external interface and internal interface by reaction chamber 11, plasma is entered to described plasma channel 2 by a pipeline 13 again.
The present embodiment has the cleaning performance identical with embodiment mono-, no longer describes herein.
The plasma that above-mentioned two embodiment provide strengthens in the method for cleaning device and cleaning wafer, employing has the plasma enhancing cleaning device that is less than diameter wafer wafer is cleaned, especially fluorine residue is cleaned, be conducive to distributing rapidly of heat, and small size cleans can guarantee that the regional Impurity removal cleaned is clean, do not need to carry out wet-cleaned, peripheral conduits can be discharged the particulate and the fluorine residue that clean timely, improved greatly the quality of cleaning, reduced the impact of edge effect, thereby while having avoided cleaning to the destruction of low K dielectric layer, greatly reduce the risk while cleaning.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention invention.Like this, if, within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention also is intended to comprise these change and modification.
Claims (22)
1. a plasma strengthens cleaning device, it is characterized in that, comprising:
One plasma pipeline, in order to transmit plasma, described plasma channel diameter is less than pending diameter wafer;
One peripheral conduits, material after cleaning in order to transmission, described peripheral conduits is surrounded described plasma channel.
2. plasma as claimed in claim 1 strengthens cleaning device, it is characterized in that, also comprise a metallic cable layer, described metallic cable layer is between described plasma channel and described peripheral conduits.
3. plasma as claimed in claim 2 strengthens cleaning device, it is characterized in that, described metallic cable layer is cylindric.
4. plasma as claimed in claim 3 strengthens cleaning device, it is characterized in that, also comprise a protective layer, described protective layer is between described plasma channel and metallic cable layer.
5. plasma as claimed in claim 4 strengthens cleaning device, it is characterized in that, the thickness of described protective layer is 0.01mm ~ 2mm.
6. plasma as claimed in claim 1 strengthens cleaning device, it is characterized in that, described peripheral conduits be shaped as ring-like tubular.
7. plasma as claimed in claim 6 strengthens cleaning device, it is characterized in that, the internal diameter of described peripheral conduits is 0.1mm ~ 10mm, and external diameter is 0.2mm ~ 50mm.
8. plasma as claimed in claim 1 strengthens cleaning device, it is characterized in that, being shaped as of described plasma channel is cylindric.
9. plasma as claimed in claim 8 strengthens cleaning device, it is characterized in that, the diameter of described plasma channel is 0.1mm ~ 5mm.
10. plasma as described as claim 2 ~ 9 any one strengthens cleaning device, it is characterized in that described peripheral conduits, plasma channel and metallic cable layer center conllinear.
11. a plasma strengthens purging system, it is characterized in that, comprising:
Plasma as described as any one in claim 1 ~ 10 strengthens cleaning device;
One reaction chamber;
One plasma generator;
Wherein, described gas ions strengthens the inside that cleaning device is positioned at described reaction chamber; Described reaction chamber has internal interface, external interface and outlet; The output of described gas ions generator is connected with the external interface of reaction chamber, described plasma channel is connected with the internal interface of reaction chamber, the plasma provided for the output that receives the gas ions generator, described peripheral conduits is connected with the outlet of reaction chamber, for discharging the material after cleaning.
12. plasma as claimed in claim 11 strengthens purging system, it is characterized in that, the quantity that described gas ions strengthens cleaning device is more than or equal to one.
13. one kind is utilized the described plasma of claim 1 ~ 10 any one to strengthen the method that cleaning device carries out cleaning wafer, it is characterized in that, comprising:
Pending wafer is positioned over to described gas ions and strengthens the cleaning device below;
Pass into plasma in described plasma channel;
The described plasma that relatively moves strengthens cleaning device and wafer.
14. the method for cleaning wafer as claimed in claim 13, is characterized in that, described wafer is positioned over described gas ions and strengthens cleaning device below 0.1mm ~ 50mm.
15. the method for cleaning wafer as claimed in claim 13, is characterized in that, described plasma comprises: nitrogen, carbon dioxide, methane, oxygen, one or more in hydrogen.
16. the method for cleaning wafer as claimed in claim 15, is characterized in that, the flow of described plasma is all 1sccm ~ 1000sccm.
17. the method for cleaning wafer as claimed in claim 13, is characterized in that, the relative moving speed that described plasma strengthens cleaning device and wafer is 1mm/s ~ 200mm/s.
18. one kind is utilized the described plasma of claim 11 ~ 12 any one to strengthen the method that purging system carries out cleaning wafer, it is characterized in that, comprising:
Be written into pending wafer in described reaction chamber, and be positioned over described gas ions enhancing cleaning device below;
Described plasma generator produces plasma, and by external interface and the internal interface of reaction chamber, plasma is passed into to described plasma channel;
The described plasma that relatively moves strengthens cleaning device and wafer.
19. the method for cleaning wafer as claimed in claim 18, is characterized in that, described wafer is positioned over described gas ions and strengthens cleaning device below 0.1mm ~ 50mm.
20. the method for cleaning wafer as claimed in claim 18, is characterized in that, described plasma comprises: nitrogen, carbon dioxide, methane, oxygen, one or more in hydrogen.
21. the method for cleaning wafer as claimed in claim 20, is characterized in that, the flow of described plasma is all 1sccm ~ 1000sccm.
22. the method for cleaning wafer as claimed in claim 18, is characterized in that, the relative moving speed that described plasma strengthens cleaning device and wafer is 1mm/s ~ 200mm/s.
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| CN201210183524XA CN103456660A (en) | 2012-06-05 | 2012-06-05 | Plasma reinforcement cleaning device and system and method for cleaning wafers |
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| CN201210183524XA CN103456660A (en) | 2012-06-05 | 2012-06-05 | Plasma reinforcement cleaning device and system and method for cleaning wafers |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671613A (en) * | 2018-11-29 | 2019-04-23 | 贵州振华风光半导体有限公司 | One kind being suitable for substrate circuit nitrogen-hydrogen mixing plasma cleaning method |
| CN109686650A (en) * | 2018-11-29 | 2019-04-26 | 贵州振华风光半导体有限公司 | One kind being suitable for integrated circuit metal shell nitrogen-hydrogen mixing plasma cleaning method |
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| JPH08124897A (en) * | 1994-10-19 | 1996-05-17 | Fujitsu Ltd | Etching system, exposure system and production of reticle |
| JP2000216141A (en) * | 1999-01-20 | 2000-08-04 | Seiko Epson Corp | Surface treatment apparatus |
| CN101338413A (en) * | 2007-07-06 | 2009-01-07 | 应用材料股份有限公司 | Remote inductively coupled plasma source for cvd chamber cleaning |
| CA2754458A1 (en) * | 2010-10-11 | 2012-04-11 | Sulzer Metco Ag | Method of manufacturing a thermal barrier coating structure |
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2012
- 2012-06-05 CN CN201210183524XA patent/CN103456660A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08124897A (en) * | 1994-10-19 | 1996-05-17 | Fujitsu Ltd | Etching system, exposure system and production of reticle |
| JP2000216141A (en) * | 1999-01-20 | 2000-08-04 | Seiko Epson Corp | Surface treatment apparatus |
| CN101338413A (en) * | 2007-07-06 | 2009-01-07 | 应用材料股份有限公司 | Remote inductively coupled plasma source for cvd chamber cleaning |
| CA2754458A1 (en) * | 2010-10-11 | 2012-04-11 | Sulzer Metco Ag | Method of manufacturing a thermal barrier coating structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109671613A (en) * | 2018-11-29 | 2019-04-23 | 贵州振华风光半导体有限公司 | One kind being suitable for substrate circuit nitrogen-hydrogen mixing plasma cleaning method |
| CN109686650A (en) * | 2018-11-29 | 2019-04-26 | 贵州振华风光半导体有限公司 | One kind being suitable for integrated circuit metal shell nitrogen-hydrogen mixing plasma cleaning method |
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Application publication date: 20131218 |