CN103456618B - 用于显现mos器件的aa结构缺陷的腐蚀方法 - Google Patents
用于显现mos器件的aa结构缺陷的腐蚀方法 Download PDFInfo
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CN106404499A (zh) * | 2016-08-29 | 2017-02-15 | 中钢集团邢台机械轧辊有限公司 | 一种金相浸蚀方法 |
CN111090029A (zh) * | 2019-11-19 | 2020-05-01 | 江苏英锐半导体有限公司 | 一种双极ic中集电极发射极漏电的三极管检测方法 |
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CN101082550A (zh) * | 2007-07-13 | 2007-12-05 | 浙江大学 | 一种用于硅晶体材料缺陷显示的腐蚀液及其使用方法 |
CN102192850A (zh) * | 2010-03-19 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | 功率mos中esd pn结的轮廓显现溶液及方法 |
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JP2008130696A (ja) * | 2006-11-17 | 2008-06-05 | Shin Etsu Handotai Co Ltd | シリコンウェーハ表面の珪素脱離方法、シリコンウェーハ表層下領域の液体サンプル採取方法及びその金属不純物分析方法 |
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CN101082550A (zh) * | 2007-07-13 | 2007-12-05 | 浙江大学 | 一种用于硅晶体材料缺陷显示的腐蚀液及其使用方法 |
CN102192850A (zh) * | 2010-03-19 | 2011-09-21 | 中芯国际集成电路制造(上海)有限公司 | 功率mos中esd pn结的轮廓显现溶液及方法 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140120 |
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