CN103441716A - Drive circuit of three-phase brushless direct-current motor - Google Patents
Drive circuit of three-phase brushless direct-current motor Download PDFInfo
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- CN103441716A CN103441716A CN2013103703201A CN201310370320A CN103441716A CN 103441716 A CN103441716 A CN 103441716A CN 2013103703201 A CN2013103703201 A CN 2013103703201A CN 201310370320 A CN201310370320 A CN 201310370320A CN 103441716 A CN103441716 A CN 103441716A
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Abstract
The invention discloses a drive circuit of a three-phase brushless direct-current motor. The drive circuit of the three-phase brushless direct-current motor comprises drive modules of three phases. The drive module of each phase comprises a voltage division unit, a stabilivolt, a first switch unit, a stabilized voltage supply, a wave shaping circuit, a second switch unit and a third switch unit, wherein a first end of the voltage division unit is connected with a first end of the first switch unit, the cathode of the stabilivolt is connected to a second end of the voltage division unit, the anode of the stabilivolt is connected to a third end of the voltage division unit, the input end of the stabilized voltage supply is connected to the second end of the voltage division unit, a first input end of the wave shaping circuit is connected to the positive electrode of the output end of the stabilized voltage supply, a second input end of the wave shaping circuit is connected to the third end of the voltage division unit, the grounding end of the wave shaping circuit is connected to the ground through a resistor, a first end of the second switch unit is connected to the positive electrode of the output end of the stabilized power supply, and a first end of the third switch unit is connected with a second end of the second switch unit to serve as the output end of the drive circuit. The working voltage of the drive circuit of the three-phase brushless direct-current motor can range from 28V to 90V, and the drive circuit of the three-phase brushless direct-current motor is simple and easy to implement.
Description
Technical field
The invention belongs to the three-phase brushless dc motor field, more specifically, relate to a kind of drive circuit of three-phase brushless dc motor.
Background technology
For existing three-phase brushless dc motor drive circuit, usually the operating voltage range of three phase bridge circuit is 28V-36V, if need the upper brachium pontis metal-oxide-semiconductor of three-phase bridge to work long hours, the drive circuitry that so necessary additional independently isolation voltage is given upper brachium pontis driven MOS pipe, so so cause the circuit complexity, components and parts are many, and volume is large, simultaneously reliability decrease.Mostly adopt the bootstrap capacitor supply power mode, own capacitance is limited, and discharges and recharges and need to be operated on off state, so must operate on off state, the metal-oxide-semiconductor of upper bridge is not suitable with long-time conducting work.Motor can not be selected by low speed, bridge metal-oxide-semiconductor conducting for a long time on three phase bridge circuit.Also having a kind of mode is to adopt the charge pump power supply, and its charge pump power supply circuits are very complex also, and the circuit volume is large, the reliable reduction.
Because slowly running or stall may appear in three-phase brushless dc motor, so the defeated upper brachium pontis of three-phase bridge should possess long-time opening state.Existing three-phase brushless dc motor drive circuit works voltage range is narrow, and motor can not slowly run, and damages drive circuit.
Summary of the invention
Above defect or Improvement requirement for prior art, the invention provides a kind of drive circuit of three-phase brushless dc motor, its purpose is to make the three phase bridge circuit operating voltage range wide, the operating voltage range that solves thus existing three phase bridge circuit is narrow, and motor can not slowly run and cause damaging the technical problem of drive circuit.
For achieving the above object, according to one aspect of the present invention, a kind of drive circuit of three-phase brushless dc motor is provided, comprise the three-phase drive module, wherein a phase driver module comprises: partial pressure unit, voltage-stabiliser tube D1, the first switch element, stabilized voltage power supply, waveform shaping circuit U1A, second switch unit and the 3rd switch element; The control end of the first switch element is for connecting high level input SAH; The first end of partial pressure unit is connected with the first end of described the first switch element; The negative electrode of voltage-stabiliser tube D1 is connected to the second end of described partial pressure unit, and anodic bonding is to the 3rd end of described partial pressure unit; The input of stabilized voltage power supply is connected to the second end of partial pressure unit; The first input end of waveform shaping circuit U1A is connected to the output head anode of stabilized voltage power supply, and the second input of waveform shaping circuit U1A is connected to the 3rd end of partial pressure unit, and the earth terminal of waveform shaping circuit U1A is by resistance R 12 ground connection; The control end of second switch unit is connected to the output of U1A, and the first end of second switch unit is connected to the output head anode of stabilized voltage power supply; The negative pole of output end of stabilized voltage power supply is connected to the earth terminal of described waveform shaping circuit U1A; The control end of the 3rd switch element is for connecting low level input SAL, and the first end of the 3rd switch element connects after the second end of described second switch unit the output U as drive circuit, the second end ground connection of the 3rd switch element.
Further, described partial pressure unit comprises resistance R 4 and the resistance R 5 be connected in series successively, resistance R 4 and resistance R 5 be connected in series end as the 3rd end of partial pressure unit, the non-first end of end as partial pressure unit that be connected in series of resistance R 5, non-second end of end as partial pressure unit that be connected in series of resistance R 4; The resistance of described resistance R 4 equates with the resistance of described resistance R 5.
Further, the first switch element comprises: metal-oxide-semiconductor Q1 and resistance R 1; The grid of described metal-oxide-semiconductor Q1 is as the control end of the first switch element, and the drain electrode of metal-oxide-semiconductor Q1 is as the first end of the first switch element, and source electrode is as the second end of the first switch element, and resistance R 1 is connected between grid and source electrode.
Further, described stabilized voltage power supply comprises: the resistance R 10 be connected in series successively and resistance R 11, voltage stabilizing element D4 and be connected in parallel on the first end of described voltage stabilizing element D4 and the capacitor C 1 between the second end; The first end of described voltage stabilizing element D4 is connected with the output of partial pressure unit, the second end of described voltage stabilizing element D4 is connected with the earth terminal of described waveform shaping circuit U1A, and the 3rd end of described voltage stabilizing element D4 is connected with the end that is connected in series of described resistance R 10 and described resistance R 11.
Further, described second switch unit comprises: metal-oxide-semiconductor Q4 and resistance R 13; The grid of described metal-oxide-semiconductor Q4 is as the control end of second switch unit, and the drain electrode of metal-oxide-semiconductor Q4 is as the second end of second switch unit, and source electrode is as the first end of second switch unit, and resistance R 13 is connected between grid and source electrode.
Further, the 3rd switch element comprises: metal-oxide-semiconductor Q7 and resistance R 16; The grid of described metal-oxide-semiconductor Q7 is as the control end of the 3rd switch element, and the drain electrode of metal-oxide-semiconductor Q7 is as the first end of the 3rd switch element, and source electrode is as the second end of the 3rd switch element, and resistance R 16 is connected between grid and source electrode.
Further, described three-phase drive module adopts mixing thick film integrated circuit manufacturing process and BeO substrate to make.
The operating voltage range of drive circuit provided by the invention can reach 28V-90V, and circuit is simple, is easy to realize.
The accompanying drawing explanation
Fig. 1 is the physical circuit figure of a phase in the drive circuit of the three-phase brushless dc motor that provides of the embodiment of the present invention;
Fig. 2 is the physical circuit figure of the drive circuit of the three-phase brushless dc motor that provides of the embodiment of the present invention.
In institute's drawings attached, identical Reference numeral is used for meaning identical element or structure, wherein.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.In addition, below in each execution mode of described the present invention involved technical characterictic as long as form each other conflict, just can mutually not combine.
Narrow for existing three-phase brushless dc motor drive circuit works voltage range, motor can not slowly run, and damages drive circuit, and the embodiment of the present invention provides a kind of drive circuit of three-phase brushless dc motor; Realize wide operating voltage range and solve the motor driving function that slowly runs by controlling the components and parts such as triode and Schmidt's waveform shaping circuit.Can be widely used in direct current machine and drive, three-phase brushless dc motor drive circuit and high-end PMOS pipe drive, the fields such as control circuit.
The three-phase brushless dc motor drive circuit (our voltage range is 28V-36V usually) that now to design a operating voltage range be 28V-90V.Index request maximum transmission power: 550W; Maximum continuous output current: 15A; Three-phase bridge operating voltage: 28V-90V; Three-phase bridge should possess long-time conducting function simultaneously; Operating temperature range :-55 ℃～125 ℃.And this three phase bridge circuit operating voltage range is wide, can reach 28V-90V, even wider operating voltage range.
The drive circuit of the three-phase brushless dc motor that the embodiment of the present invention provides comprises: the three-phase drive module, as shown in Figure 1, wherein a phase driver module comprises: partial pressure unit 10, voltage-stabiliser tube D1, the first switch element 11, stabilized voltage power supply 12, waveform shaping circuit U1A, second switch unit 13 and the 3rd switch element 14; The control end of the first switch element 11 is for connecting A phase high level input SAH; The first end of partial pressure unit 10 is connected with the first end of described the first switch element 11; The negative electrode of voltage-stabiliser tube D1 is connected to described the second end to partial pressure unit 10, and anodic bonding is to the 3rd end of described partial pressure unit 10; The input of stabilized voltage power supply 12 is connected to the second end of partial pressure unit 10; The first input end of waveform shaping circuit U1A is connected to the output head anode of stabilized voltage power supply 12, and the second input of waveform shaping circuit U1A is connected to the 3rd end of partial pressure unit 10, and the earth terminal of waveform shaping circuit U1A is by resistance R 12 ground connection; The control end of second switch unit 13 is connected to the output of U1A, and the first end of second switch unit 13 is connected to the output head anode of stabilized voltage power supply 12, and the negative pole of output end of stabilized voltage power supply 12 is connected to the earth terminal of waveform shaping circuit U1A; The control end of the 3rd switch element 14 is for connecting A phase low level input SAL, and the first end of the 3rd switch element 14 connects after the second end of described second switch unit 13 the output U as drive circuit, the second end ground connection of the 3rd switch element 14.
Wherein, partial pressure unit 10 comprises resistance R 4 and the resistance R 5 be connected in series successively, resistance R 4 and resistance R 5 be connected in series end as the 3rd end of partial pressure unit 10, the non-first end of end as partial pressure unit 10 that be connected in series of resistance R 5, non-second end of end as partial pressure unit 10 that be connected in series of resistance R 4; The resistance of described resistance R 4 equates with the resistance of described resistance R 5.
As one embodiment of the present of invention, the first switch element 11 comprises: metal-oxide-semiconductor Q1 and resistance R 1; The grid of described metal-oxide-semiconductor Q1 is as the control end of the first switch element 11, and the drain electrode of metal-oxide-semiconductor Q1 is as the first end of the first switch element 11, and source electrode is as the second end of the first switch element 11, and resistance R 1 is connected between grid and source electrode.
Wherein, stabilized voltage power supply 12 comprises: the resistance R 10 be connected in series successively and resistance R 11, voltage stabilizing element D4 and be connected in parallel on the first end of described voltage stabilizing element D4 and the capacitor C 1 between the second end; The first end of voltage stabilizing element D4 is connected with the output of partial pressure unit 10, the second end of described voltage stabilizing element D4 is connected with the earth terminal of described waveform shaping circuit U1A, and the 3rd end of described voltage stabilizing element D4 is connected with the end that is connected in series of described resistance R 10 and described resistance R 11.
As one embodiment of the present of invention, second switch unit 13 comprises: metal-oxide-semiconductor Q4 and resistance R 13; The grid of described metal-oxide-semiconductor Q4 is as the control end of second switch unit 13, and the drain electrode of metal-oxide-semiconductor Q4 is as the second end of second switch unit 13, and source electrode is as the first end of second switch unit 13, and resistance R 13 is connected between grid and source electrode.
As one embodiment of the present of invention, the 3rd switch element 14 comprises: metal-oxide-semiconductor Q7 and resistance R 16; The grid of described metal-oxide-semiconductor Q7 is as the control end of the 3rd switch element 14, and the drain electrode of metal-oxide-semiconductor Q7 is as the first end of the 3rd switch element 14, and source electrode is as the second end of the 3rd switch element 14, and resistance R 16 is connected between grid and source electrode.
In embodiments of the present invention, waveform shaping circuit U1A can adopt Schmidt's waveform shaping circuit.All switch elements can also can be realized the components and parts of switching function for other.
In embodiments of the present invention, the wide high-end PMOS tube drive circuit of three-phase bridge of this voltage range is based on the drive circuit of the high-end PMOS pipe of a driving that CD40106 is core.On manufacturing process, be to adopt BeO substrate, mixing thick film integrated circuit technique to make.
For the further description embodiment of the present invention, now in conjunction with Fig. 1 in detail its single channel operation principle is described in detail as follows: if main circuit drives the PMOS pipe of upper brachium pontis.The two-way input, SAH Duan Shi mono-tunnel high-end PMOS pipe input control, SAL Duan Shi mono-road low side NMOS pipe input control, the V+ end is working power end, operating voltage range (28V-90V).The PGND end is right power supply ground.By the input of prime signal, control two metal-oxide-semiconductors on bridge road and open or turn-off, lost efficacy to the control of motor.
When V+ end and PGND end add 28V voltage, when SAH input termination high level, Q1 manage conducting, and power supply V+ process R4, R5, Q1 are to PGND formation loop.Because pressure drop after the Q1 conducting is very little, can ignore.R4 is the same with the R5 resistance forms dividing potential drop.The voltage-stabiliser tube that D1 is 15V (temporarily not working) is for limiting the voltage of R4.The voltage at R4 two ends is defeated by U1A, and the U1A output low level makes the G utmost point of Q4 and S very bear 15V voltage, Q4 conducting.U1A is reverse Schmidt's waveform shaping circuit, its power supply termination V+, ground terminating resistor R12.D4 is a voltage-stabilizing device, is to be stabilized in 15V by R10 and R11 dividing potential drop, and the filter capacitor that C1 is 15V, D4, R10, R11, C1 form a stabilized voltage power supply, are the U1A chip power supply.R12 is a power resistor, receives on ground wire.The voltage born on R12 is: V+ deducts the supply power voltage 15V of U1A.When V+ raises, U1A and R4 both end voltage remain at 15V.What change is the voltage at R12 and R5 two ends.So just realized the function of opening of high-end PMOS pipe driving.The discharge loop resistance that R1 is Q1, the discharge loop resistance that R13 is Q4, the discharge loop resistance that R16 is Q7.
When V+ end and PGND end add 28V voltage, when SAH input termination low level, Q1 manages shutoff, and power supply V+ passes through R4, R5, Q1 forms not loop to PGND.The voltage at R4 two ends is defeated by U1A, and U1A exports high level, makes very 0V voltage of the G utmost point of Q4 and S, and Q4 turn-offs.U1A is reverse Schmidt's waveform shaping circuit, its power supply termination V+, ground terminating resistor R12.D4 is a voltage-stabilizing device, is to be stabilized in 15V by R10 and R11 dividing potential drop, and the filter capacitor that C1 is 15V, D4, R10, R11, C1 form a stabilized voltage power supply, are the U1A chip power supply.R12 is a power resistor, receives on ground wire.The voltage born on R12 is: V+ deducts the supply power voltage 15V of U1A.So just realized the turn-off function that high-end PMOS pipe drives.
When V+ end and PGND end add 36V voltage, when SAH input termination high level, Q1 manage conducting, and power supply V+ process R4, R5, Q1 are to PGND formation loop.Because pressure drop after the Q1 conducting is very little, can ignore.R4 is the same with the R5 resistance forms dividing potential drop.D1 by the limiting voltage at R4 two ends at 15V.The voltage at R4 two ends is defeated by U1A, and the U1A output low level makes the G utmost point of Q4 and S very bear 15V voltage, Q4 conducting.U1A is reverse Schmidt's waveform shaping circuit, its power supply termination V+, ground terminating resistor R12.D4 is a voltage-stabilizing device, is to be stabilized in 15V by R10 and R11 dividing potential drop, and the filter capacitor that C1 is 15V, D4, R10, R11, C1 form a stabilized voltage power supply, are the U1A chip power supply.R12 is a power resistor, receives on ground wire.The voltage born on R12 is: V+ deducts the supply power voltage 15V of U1A.When V+ raises, U1A and R4 both end voltage remain at 15V.What change is the voltage at R12 and R5 two ends.So just realized the function of opening of high-end PMOS pipe driving.
When V+ end and PGND end add 36V voltage, when SAH input termination low level, Q1 manages shutoff, and power supply V+ passes through R4, R5, Q1 forms not loop to PGND.The voltage at R4 two ends is defeated by U1A, and U1A exports high level, makes very 0V voltage of the G utmost point of Q4 and S, and Q4 turn-offs.U1A is reverse Schmidt's waveform shaping circuit, its power supply termination V+, ground terminating resistor R12.D4 is a voltage-stabilizing device, is to be stabilized in 15V by R10 and R11 dividing potential drop, and the filter capacitor that C1 is 15V, D4, R10, R11, C1 form a stabilized voltage power supply, are the U1A chip power supply.R12 is a power resistor, receives on ground wire.The voltage born on R12 is: V+ deducts the supply power voltage 15V of U1A.So just realized the turn-off function that high-end PMOS pipe drives.
When V+ voltage is added to 90V, and same operation principle can realize during 36V.This circuit wide-voltage range of can working is described.
Fig. 2 shows the physical circuit figure of the drive circuit of the three-phase brushless dc motor that the embodiment of the present invention provides; Those of ordinary skill in the art is easy to realize three-phase circuit in conjunction with the circuit structure shown in Fig. 2 on the basis of having realized single phase circuit, therefore no longer describes in detail.
The operating voltage range of the drive circuit that the embodiment of the present invention provides can reach 28V-90V, and circuit is simple, is easy to realize; The upper brachium pontis conducting for a long time of three-phase bridge; Improve the drive waveforms of the upper bridge PMOS pipe of three-phase bridge, the operating efficiency of switching tube.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (7)
1. the drive circuit of a three-phase brushless dc motor, it is characterized in that, comprise the three-phase drive module, wherein a phase driver module comprises: partial pressure unit (10), voltage-stabiliser tube D1, the first switch element (11), stabilized voltage power supply (12), waveform shaping circuit U1A, second switch unit (13) and the 3rd switch element (14);
The control end of the first switch element (11) is for connecting the high level input;
The first end of partial pressure unit (10) is connected with the first end of described the first switch element (11);
The negative electrode of voltage-stabiliser tube D1 is connected to the second end of described partial pressure unit (10), and anodic bonding is to the 3rd end of described partial pressure unit (10);
The input of stabilized voltage power supply (12) is connected to the second end of partial pressure unit (10);
The first input end of waveform shaping circuit U1A is connected to the output head anode of stabilized voltage power supply (12), and the second input of waveform shaping circuit U1A is connected to the 3rd end of partial pressure unit (10), and the earth terminal of waveform shaping circuit U1A is by resistance R 12 ground connection;
The control end of second switch unit (13) is connected to the output of U1A, and the first end of second switch unit (13) is connected to the output head anode of stabilized voltage power supply (12); The negative pole of output end of described stabilized voltage power supply (12) is connected to the earth terminal of described waveform shaping circuit U1A;
The control end of the 3rd switch element (14) is for connecting the low level input, the first end of the 3rd switch element (14) connects after the second end of described second switch unit (13) the output U as drive circuit, the second end ground connection of the 3rd switch element (14).
2. drive circuit as claimed in claim 1, it is characterized in that, described partial pressure unit (10) comprises resistance R 4 and the resistance R 5 be connected in series successively, resistance R 4 and resistance R 5 be connected in series end as the 3rd end of partial pressure unit (10), the non-first end of end as partial pressure unit (10) that be connected in series of resistance R 5, non-second end of end as partial pressure unit (10) that be connected in series of resistance R 4; The resistance of described resistance R 4 equates with the resistance of described resistance R 5.
3. drive circuit as claimed in claim 1 or 2, is characterized in that, described the first switch element (11) comprising: metal-oxide-semiconductor Q1 and resistance R 1;
The grid of described metal-oxide-semiconductor Q1 is as the control end of described the first switch element (11), the drain electrode of described metal-oxide-semiconductor Q1 is as the first end of described the first switch element (11), the source electrode of described metal-oxide-semiconductor Q1 is as the second end of described the first switch element (11), and described resistance R 1 is connected between the grid and source electrode of described metal-oxide-semiconductor Q1.
4. as the described drive circuit of claim 1-3 any one, it is characterized in that, described stabilized voltage power supply (12) comprising: the resistance R 10 be connected in series successively and resistance R 11, voltage stabilizing element D4 and be connected in parallel on the first end of described voltage stabilizing element D4 and the capacitor C 1 between the second end;
The first end of described voltage stabilizing element D4 is connected with the output of partial pressure unit (10), the second end of described voltage stabilizing element D4 is connected with the earth terminal of described waveform shaping circuit U1A, and the 3rd end of described voltage stabilizing element D4 is connected with the end that is connected in series of described resistance R 10 and described resistance R 11.
5. as the described drive circuit of claim 1-4 any one, it is characterized in that, described second switch unit (13) comprising: metal-oxide-semiconductor Q4 and resistance R 13;
The grid of described metal-oxide-semiconductor Q4 is as the control end of described second switch unit (13), the drain electrode of described metal-oxide-semiconductor Q4 is as the second end of described second switch unit (13), the source electrode of described metal-oxide-semiconductor Q4 is as the first end of described second switch unit (13), and described resistance R 13 is connected between the grid and source electrode of described metal-oxide-semiconductor Q4.
6. as the described drive circuit of claim 1-5 any one, it is characterized in that, described the 3rd switch element (14) comprising: metal-oxide-semiconductor Q7 and resistance R 16;
The grid of described metal-oxide-semiconductor Q7 is as the control end of the 3rd switch element (14), the drain electrode of described metal-oxide-semiconductor Q7 is as the first end of described the 3rd switch element (14), the source electrode of described metal-oxide-semiconductor Q7 is as the second end of described the 3rd switch element (14), and resistance R 16 is connected between the grid and source electrode of described metal-oxide-semiconductor Q7.
7. drive circuit as claimed in claim 1, is characterized in that, described three-phase drive module adopts mixing thick film integrated circuit manufacturing process and BeO substrate to make.
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| CN201310370320.1A CN103441716B (en) | 2013-08-22 | 2013-08-22 | A kind of drive circuit of three-phase brushless dc motor |
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| CN201310370320.1A CN103441716B (en) | 2013-08-22 | 2013-08-22 | A kind of drive circuit of three-phase brushless dc motor |
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| CN103441716B CN103441716B (en) | 2016-03-30 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008259340A (en) * | 2007-04-05 | 2008-10-23 | Sanyo Electric Co Ltd | Motor drive circuit |
| CN201349126Y (en) * | 2008-09-23 | 2009-11-18 | 陈赖容 | Protective circuit board of lead-acid battery pack for electrically driven vehicle |
| JP2010206860A (en) * | 2009-02-27 | 2010-09-16 | Sanyo Electric Co Ltd | Motor drive circuit |
| CN102064677A (en) * | 2009-11-12 | 2011-05-18 | 立锜科技股份有限公司 | Control circuit for adjusting driving voltage in power converter |
| CN102420554A (en) * | 2010-09-24 | 2012-04-18 | 日本电产高科电机控股公司 | Motor |
| CN203457088U (en) * | 2013-08-22 | 2014-02-26 | 深圳市振华微电子有限公司 | Driving circuit of three-phase brushless DC motor |
-
2013
- 2013-08-22 CN CN201310370320.1A patent/CN103441716B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008259340A (en) * | 2007-04-05 | 2008-10-23 | Sanyo Electric Co Ltd | Motor drive circuit |
| CN201349126Y (en) * | 2008-09-23 | 2009-11-18 | 陈赖容 | Protective circuit board of lead-acid battery pack for electrically driven vehicle |
| JP2010206860A (en) * | 2009-02-27 | 2010-09-16 | Sanyo Electric Co Ltd | Motor drive circuit |
| CN102064677A (en) * | 2009-11-12 | 2011-05-18 | 立锜科技股份有限公司 | Control circuit for adjusting driving voltage in power converter |
| CN102420554A (en) * | 2010-09-24 | 2012-04-18 | 日本电产高科电机控股公司 | Motor |
| CN203457088U (en) * | 2013-08-22 | 2014-02-26 | 深圳市振华微电子有限公司 | Driving circuit of three-phase brushless DC motor |
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