CN103441716B - A kind of drive circuit of three-phase brushless dc motor - Google Patents
A kind of drive circuit of three-phase brushless dc motor Download PDFInfo
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- CN103441716B CN103441716B CN201310370320.1A CN201310370320A CN103441716B CN 103441716 B CN103441716 B CN 103441716B CN 201310370320 A CN201310370320 A CN 201310370320A CN 103441716 B CN103441716 B CN 103441716B
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Abstract
The invention discloses a kind of drive circuit of three-phase brushless dc motor, comprise three-phase drive module, a phase driver module comprises partial pressure unit, voltage-stabiliser tube, the first switch element, stabilized voltage power supply, waveform shaping circuit, second switch unit and the 3rd switch element; The first end of partial pressure unit is connected with the first end of the first switch element; The negative electrode of voltage-stabiliser tube is connected to the second end of partial pressure unit, and anode is connected to the 3rd end of partial pressure unit; The input of stabilized voltage power supply is connected to the second end of partial pressure unit; The first input end of waveform shaping circuit is connected to the output head anode of stabilized voltage power supply, and the second input is connected to the 3rd end of partial pressure unit, and earth terminal passes through grounding through resistance; The first end of second switch unit is connected to the output head anode of stabilized voltage power supply; As the output of drive circuit after second end of the first end connection second switch unit of the 3rd switch element.The operating voltage range of drive circuit provided by the invention can reach 28V-90V, and circuit is simple, is easy to realize.
Description
Technical field
The invention belongs to three-phase brushless dc motor field, more specifically, relate to a kind of drive circuit of three-phase brushless dc motor.
Background technology
For existing three-phase brushless dc motor drive circuit, the operating voltage range of usual three phase bridge circuit is 28V-36V, if need the upper brachium pontis metal-oxide-semiconductor of three-phase bridge to work long hours, so necessary additional independently isolation voltage gives the drive circuitry of upper brachium pontis driven MOS pipe, just cause circuit complicated so like this, components and parts are many, and volume is large, simultaneously reliability decrease.Most employing bootstrap capacitor supply power mode, oneself capacitance is limited, and discharge and recharge needs to be operated on off state, so must operate on off state, the metal-oxide-semiconductor of upper bridge is not suitable with long-time ON operation.Motor can not be selected by low speed, and on three phase bridge circuit, bridge metal-oxide-semiconductor can not conducting for a long time.Also have a kind of mode to be adopt charge pump to power, its charge pump power supply circuits are also quite complicated, and circuit volume is large, reliably reduces.
Because slowly running or stall may appear in three-phase brushless dc motor, so the defeated upper brachium pontis of three-phase bridge should possess long-time opening state.Existing three-phase brushless dc motor drive circuit works voltage range is narrow, and motor can not slowly run, and damages drive circuit.
Summary of the invention
For above defect or the Improvement requirement of prior art, the invention provides a kind of drive circuit of three-phase brushless dc motor, its object is to make three phase bridge circuit operating voltage range wide, the operating voltage range solving existing three phase bridge circuit is thus narrow, and motor can not slowly run and cause damaging the technical problem of drive circuit.
For achieving the above object, according to one aspect of the present invention, provide a kind of drive circuit of three-phase brushless dc motor, comprise three-phase drive module, wherein a phase driver module comprises: partial pressure unit, voltage-stabiliser tube D1, the first switch element, stabilized voltage power supply, waveform shaping circuit U1A, second switch unit and the 3rd switch element; The control end of the first switch element is for connecting high level input SAH; The first end of partial pressure unit is connected with the first end of described first switch element; The negative electrode of voltage-stabiliser tube D1 is connected to the second end of described partial pressure unit, and anode is connected to the 3rd end of described partial pressure unit; The input of stabilized voltage power supply is connected to the second end of partial pressure unit; The first input end of waveform shaping circuit U1A is connected to the output head anode of stabilized voltage power supply, and second input of waveform shaping circuit U1A is connected to the 3rd end of partial pressure unit, and the earth terminal of waveform shaping circuit U1A is by resistance R12 ground connection; The control end of second switch unit is connected to the output of U1A, and the first end of second switch unit is connected to the output head anode of stabilized voltage power supply; The negative pole of output end of stabilized voltage power supply is connected to the earth terminal of described waveform shaping circuit U1A; The control end of the 3rd switch element is for connecting low level input SAL, and the first end of the 3rd switch element connects the output U as drive circuit after the second end of described second switch unit, the second end ground connection of the 3rd switch element.
Further, described partial pressure unit comprises the resistance R4 and resistance R5 that are sequentially connected in series, resistance R4 and resistance R5 is connected in series three end of end as partial pressure unit, the non-series connection link of resistance R5 is as the first end of partial pressure unit, and the non-series connection link of resistance R4 is as the second end of partial pressure unit; The resistance of described resistance R4 is equal with the resistance of described resistance R5.
Further, the first switch element comprises: metal-oxide-semiconductor Q1 and resistance R1; The grid of described metal-oxide-semiconductor Q1 is as the control end of the first switch element, and the drain electrode of metal-oxide-semiconductor Q1 is as the first end of the first switch element, and source electrode is as the second end of the first switch element, and resistance R1 is connected between grid and source electrode.
Further, described stabilized voltage power supply comprises: the resistance R10 be sequentially connected in series and resistance R11, voltage stabilizing element D4 and the electric capacity C1 be connected in parallel between the first end of described voltage stabilizing element D4 and the second end; The described first end of voltage stabilizing element D4 is connected with the output of partial pressure unit, second end of described voltage stabilizing element D4 is connected with the earth terminal of described waveform shaping circuit U1A, and being connected in series to hold of the 3rd end of described voltage stabilizing element D4 and described resistance R10 and described resistance R11 is connected.
Further, described second switch unit comprises: metal-oxide-semiconductor Q4 and resistance R13; The grid of described metal-oxide-semiconductor Q4 is as the control end of second switch unit, and the drain electrode of metal-oxide-semiconductor Q4 is as the second end of second switch unit, and source electrode is as the first end of second switch unit, and resistance R13 is connected between grid and source electrode.
Further, the 3rd switch element comprises: metal-oxide-semiconductor Q7 and resistance R16; The grid of described metal-oxide-semiconductor Q7 is as the control end of the 3rd switch element, and the drain electrode of metal-oxide-semiconductor Q7 is as the first end of the 3rd switch element, and source electrode is as the second end of the 3rd switch element, and resistance R16 is connected between grid and source electrode.
Further, described three-phase drive module adopts mixing thick film integrated circuit manufacturing process and BeO substrate to make.
The operating voltage range of drive circuit provided by the invention can reach 28V-90V, and circuit is simple, is easy to realize.
Accompanying drawing explanation
Fig. 1 is the physical circuit figure of a phase in the drive circuit of the three-phase brushless dc motor that the embodiment of the present invention provides;
Fig. 2 is the physical circuit figure of the drive circuit of the three-phase brushless dc motor that the embodiment of the present invention provides.
In all of the figs, identical Reference numeral is used for representing identical element or structure, wherein.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.In addition, if below in described each execution mode of the present invention involved technical characteristic do not form conflict each other and just can mutually combine.
Narrow for existing three-phase brushless dc motor drive circuit works voltage range, motor can not slowly run, and damages drive circuit, embodiments provides a kind of drive circuit of three-phase brushless dc motor; To slowly run driving function by controlling the components and parts such as triode and Schmidt's waveform shaping circuit and realize wide operating voltage range and solve motor.Can be widely used in DC motor Driver, three-phase brushless dc motor drive circuit and high-end PMOS drive, the fields such as control circuit.
Now design the three-phase brushless dc motor drive circuit (our voltage range is 28V-36V usually) that a operating voltage range is 28V-90V.Index request maximum transmission power: 550W; Maximum continuous output current: 15A; Three-phase bridge operating voltage: 28V-90V; Three-phase bridge should possess long-time conducting function simultaneously; Operating temperature range :-55 DEG C ~ 125 DEG C.And this three phase bridge circuit operating voltage range is wide, 28V-90V can be reached, even wider operating voltage range.
The drive circuit of the three-phase brushless dc motor that the embodiment of the present invention provides comprises: three-phase drive module, as shown in Figure 1, wherein a phase driver module comprises: partial pressure unit 10, voltage-stabiliser tube D1, the first switch element 11, stabilized voltage power supply 12, waveform shaping circuit U1A, second switch unit 13 and the 3rd switch element 14; The control end of the first switch element 11 is for connecting A phase high level input SAH; The first end of partial pressure unit 10 is connected with the first end of described first switch element 11; The negative electrode of voltage-stabiliser tube D1 is connected to described the second end to partial pressure unit 10, and anode is connected to the 3rd end of described partial pressure unit 10; The input of stabilized voltage power supply 12 is connected to the second end of partial pressure unit 10; The first input end of waveform shaping circuit U1A is connected to the output head anode of stabilized voltage power supply 12, and second input of waveform shaping circuit U1A is connected to the 3rd end of partial pressure unit 10, and the earth terminal of waveform shaping circuit U1A is by resistance R12 ground connection; The control end of second switch unit 13 is connected to the output of U1A, and the first end of second switch unit 13 is connected to the output head anode of stabilized voltage power supply 12, and the negative pole of output end of stabilized voltage power supply 12 is connected to the earth terminal of waveform shaping circuit U1A; The control end of the 3rd switch element 14 is for connecting A phase low level input SAL, and the first end of the 3rd switch element 14 connects the output U as drive circuit after the second end of described second switch unit 13, the second end ground connection of the 3rd switch element 14.
Wherein, partial pressure unit 10 comprises the resistance R4 and resistance R5 that are sequentially connected in series, resistance R4 and resistance R5 is connected in series three end of end as partial pressure unit 10, the non-series connection link of resistance R5 is as the first end of partial pressure unit 10, and the non-series connection link of resistance R4 is as the second end of partial pressure unit 10; The resistance of described resistance R4 is equal with the resistance of described resistance R5.
As one embodiment of the present of invention, the first switch element 11 comprises: metal-oxide-semiconductor Q1 and resistance R1; The grid of described metal-oxide-semiconductor Q1 is as the control end of the first switch element 11, and the drain electrode of metal-oxide-semiconductor Q1 is as the first end of the first switch element 11, and source electrode is as the second end of the first switch element 11, and resistance R1 is connected between grid and source electrode.
Wherein, stabilized voltage power supply 12 comprises: the resistance R10 be sequentially connected in series and resistance R11, voltage stabilizing element D4 and the electric capacity C1 be connected in parallel between the first end of described voltage stabilizing element D4 and the second end; The first end of voltage stabilizing element D4 is connected with the output of partial pressure unit 10, second end of described voltage stabilizing element D4 is connected with the earth terminal of described waveform shaping circuit U1A, and being connected in series to hold of the 3rd end of described voltage stabilizing element D4 and described resistance R10 and described resistance R11 is connected.
As one embodiment of the present of invention, second switch unit 13 comprises: metal-oxide-semiconductor Q4 and resistance R13; The grid of described metal-oxide-semiconductor Q4 is as the control end of second switch unit 13, and the drain electrode of metal-oxide-semiconductor Q4 is as the second end of second switch unit 13, and source electrode is as the first end of second switch unit 13, and resistance R13 is connected between grid and source electrode.
As one embodiment of the present of invention, the 3rd switch element 14 comprises: metal-oxide-semiconductor Q7 and resistance R16; The grid of described metal-oxide-semiconductor Q7 is as the control end of the 3rd switch element 14, and the drain electrode of metal-oxide-semiconductor Q7 is as the first end of the 3rd switch element 14, and source electrode is as the second end of the 3rd switch element 14, and resistance R16 is connected between grid and source electrode.
In embodiments of the present invention, waveform shaping circuit U1A can adopt Schmidt's waveform shaping circuit.All switch elements can also can realize the components and parts of switching function for other.
In embodiments of the present invention, the three-phase bridge high-end PMOS drive circuit that this voltage range is wide is the drive circuit of the high-end PMOS of a driving being core based on CD40106.Manufacturing process is adopt BeO substrate, mixing thick film integrated circuit technique makes.
In order to the further description embodiment of the present invention, it is as follows that existing composition graphs 1 describes its single channel operation principle in detail: if main circuit drives the PMOS of upper brachium pontis.Two-way inputs, the high-end PMOS input control in SAH Duan Shi mono-tunnel, SAL Duan Shi mono-road low side NMOS tube input control, and V+ end is working power end, operating voltage range (28V-90V).PGND end is right power supply ground.Inputted by prime signal, two metal-oxide-semiconductors controlling bridge road are opened or are turned off, and lose efficacy to the control of motor.
When V+ end and PGND end add 28V voltage, when SAH inputs termination high level, the conducting of Q1 pipe, power supply V+ forms loop through R4, R5, Q1 to PGND.Because after Q1 conducting, pressure drop is very little, can ignore.R4 with R5 resistance is the same forms dividing potential drop.D1 is the voltage-stabiliser tube (temporarily not working) of 15V, is the voltage for limiting R4.The voltage at R4 two ends is defeated by U1A, U1A output low level, makes the very negative 15V voltage of the G pole of Q4 and S, Q4 conducting.U1A is reverse Schmidt's waveform shaping circuit, its power supply termination V+, ground terminating resistor R12.D4 is a voltage-stabilizing device, is to be stabilized in 15V by R10 and R11 dividing potential drop, and C1 is the filter capacitor of 15V, and D4, R10, R11, C1 form a stabilized voltage power supply, is U1A chip power supply.R12 is a power resistor, receives on ground wire.The voltage that R12 bears is: V+ deducts the supply power voltage 15V of U1A.When V+ raises, U1A and R4 both end voltage remains at 15V.What change is the voltage at R12 and R5 two ends.What so just achieve the driving of high-end PMOS opens function.R1 is the discharge loop resistance of Q1, and R13 is the discharge loop resistance of Q4, and R16 is the discharge loop resistance of Q7.
When V+ end and PGND end add 28V voltage, when SAH inputs termination low level, Q1 pipe turns off, and power supply V+ forms not loop through R4, R5, Q1 to PGND.The voltage at R4 two ends is defeated by U1A, and U1A exports high level, makes G pole and the S very 0V voltage of Q4, and Q4 turns off.U1A is reverse Schmidt's waveform shaping circuit, its power supply termination V+, ground terminating resistor R12.D4 is a voltage-stabilizing device, is to be stabilized in 15V by R10 and R11 dividing potential drop, and C1 is the filter capacitor of 15V, and D4, R10, R11, C1 form a stabilized voltage power supply, is U1A chip power supply.R12 is a power resistor, receives on ground wire.The voltage that R12 bears is: V+ deducts the supply power voltage 15V of U1A.So just achieve the turn-off function that high-end PMOS drives.
When V+ end and PGND end add 36V voltage, when SAH inputs termination high level, the conducting of Q1 pipe, power supply V+ forms loop through R4, R5, Q1 to PGND.Because after Q1 conducting, pressure drop is very little, can ignore.R4 with R5 resistance is the same forms dividing potential drop.The voltage at R4 two ends is limited in 15V by D1.The voltage at R4 two ends is defeated by U1A, U1A output low level, makes the very negative 15V voltage of the G pole of Q4 and S, Q4 conducting.U1A is reverse Schmidt's waveform shaping circuit, its power supply termination V+, ground terminating resistor R12.D4 is a voltage-stabilizing device, is to be stabilized in 15V by R10 and R11 dividing potential drop, and C1 is the filter capacitor of 15V, and D4, R10, R11, C1 form a stabilized voltage power supply, is U1A chip power supply.R12 is a power resistor, receives on ground wire.The voltage that R12 bears is: V+ deducts the supply power voltage 15V of U1A.When V+ raises, U1A and R4 both end voltage remains at 15V.What change is the voltage at R12 and R5 two ends.What so just achieve the driving of high-end PMOS opens function.
When V+ end and PGND end add 36V voltage, when SAH inputs termination low level, Q1 pipe turns off, and power supply V+ forms not loop through R4, R5, Q1 to PGND.The voltage at R4 two ends is defeated by U1A, and U1A exports high level, makes G pole and the S very 0V voltage of Q4, and Q4 turns off.U1A is reverse Schmidt's waveform shaping circuit, its power supply termination V+, ground terminating resistor R12.D4 is a voltage-stabilizing device, is to be stabilized in 15V by R10 and R11 dividing potential drop, and C1 is the filter capacitor of 15V, and D4, R10, R11, C1 form a stabilized voltage power supply, is U1A chip power supply.R12 is a power resistor, receives on ground wire.The voltage that R12 bears is: V+ deducts the supply power voltage 15V of U1A.So just achieve the turn-off function that high-end PMOS drives.
When V+ voltage is added to 90V, and operation principle same during 36V can realize.Illustrate that this circuit can work wide-voltage range.
Fig. 2 shows the physical circuit figure of the drive circuit of the three-phase brushless dc motor that the embodiment of the present invention provides; Those of ordinary skill in the art's circuit structure shown in composition graphs 2 on the basis achieving single phase circuit is easy to realize three-phase circuit, therefore no longer describes in detail.
The operating voltage range of the drive circuit that the embodiment of the present invention provides can reach 28V-90V, and circuit is simple, is easy to realize; The upper brachium pontis of three-phase bridge can conducting for a long time; Improve the drive waveforms of the upper bridge PMOS of three-phase bridge, the operating efficiency of switching tube.
Those skilled in the art will readily understand; the foregoing is only preferred embodiment of the present invention; not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. the drive circuit of a three-phase brushless dc motor, it is characterized in that, comprise three-phase drive module, wherein a phase driver module comprises: partial pressure unit (10), voltage-stabiliser tube D1, the first switch element (11), stabilized voltage power supply (12), waveform shaping circuit U1A, second switch unit (13) and the 3rd switch element (14);
The control end of the first switch element (11) is for connecting high level input;
The first end of partial pressure unit (10) is connected with the first end of described first switch element (11);
The negative electrode of voltage-stabiliser tube D1 is connected to the second end of described partial pressure unit (10), and anode is connected to the 3rd end as point pressure side of described partial pressure unit (10);
The input of stabilized voltage power supply (12) is connected to the second end of partial pressure unit (10);
The first input end of waveform shaping circuit U1A is connected to the output head anode of stabilized voltage power supply (12), and second input of waveform shaping circuit U1A is connected to the 3rd end of partial pressure unit (10), and the earth terminal of waveform shaping circuit U1A is by resistance R12 ground connection;
The control end of second switch unit (13) is connected to the output of U1A, and the first end of second switch unit (13) is connected to the output head anode of stabilized voltage power supply (12); The negative pole of output end of described stabilized voltage power supply (12) is connected to the earth terminal of described waveform shaping circuit U1A;
The control end of the 3rd switch element (14) is for connecting low level input, the first end of the 3rd switch element (14) connects the output U as drive circuit after the second end of described second switch unit (13), the second end ground connection of the 3rd switch element (14).
2. drive circuit as claimed in claim 1, it is characterized in that, described partial pressure unit (10) comprises the resistance R4 and resistance R5 that are sequentially connected in series, resistance R4 and resistance R5 is connected in series three end of end as partial pressure unit (10), the non-series connection link of resistance R5 is as the first end of partial pressure unit (10), and the non-series connection link of resistance R4 is as the second end of partial pressure unit (10); The resistance of described resistance R4 is equal with the resistance of described resistance R5.
3. drive circuit as claimed in claim 1 or 2, it is characterized in that, described first switch element (11) comprising: metal-oxide-semiconductor Q1 and resistance R1;
The grid of described metal-oxide-semiconductor Q1 is as the control end of described first switch element (11), the drain electrode of described metal-oxide-semiconductor Q1 is as the first end of described first switch element (11), the source electrode of described metal-oxide-semiconductor Q1 as the second end of described first switch element (11), between the grid that described resistance R1 is connected to described metal-oxide-semiconductor Q1 and source electrode.
4. drive circuit as claimed in claim 1 or 2, it is characterized in that, described stabilized voltage power supply (12) comprising: the resistance R10 be sequentially connected in series and resistance R11, voltage stabilizing element D4 and the electric capacity C1 be connected in parallel between the first end of described voltage stabilizing element D4 and the second end;
The first end of described voltage stabilizing element D4 is connected with the second end of partial pressure unit (10), second end of described voltage stabilizing element D4 is connected with the earth terminal of described waveform shaping circuit U1A, and being connected in series to hold of the 3rd end of described voltage stabilizing element D4 and described resistance R10 and described resistance R11 is connected.
5. drive circuit as claimed in claim 1 or 2, it is characterized in that, described second switch unit (13) comprising: metal-oxide-semiconductor Q4 and resistance R13;
The grid of described metal-oxide-semiconductor Q4 is as the control end of described second switch unit (13), the drain electrode of described metal-oxide-semiconductor Q4 is as the second end of described second switch unit (13), the source electrode of described metal-oxide-semiconductor Q4 as the first end of described second switch unit (13), between the grid that described resistance R13 is connected to described metal-oxide-semiconductor Q4 and source electrode.
6. drive circuit as claimed in claim 1 or 2, it is characterized in that, described 3rd switch element (14) comprising: metal-oxide-semiconductor Q7 and resistance R16;
The grid of described metal-oxide-semiconductor Q7 is as the control end of the 3rd switch element (14), the drain electrode of described metal-oxide-semiconductor Q7 is as the first end of described 3rd switch element (14), the source electrode of described metal-oxide-semiconductor Q7 as the second end of described 3rd switch element (14), between the grid that resistance R16 is connected to described metal-oxide-semiconductor Q7 and source electrode.
7. drive circuit as claimed in claim 1, is characterized in that, described three-phase drive module adopts mixing thick film integrated circuit manufacturing process and BeO substrate to make.
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| CN201310370320.1A CN103441716B (en) | 2013-08-22 | 2013-08-22 | A kind of drive circuit of three-phase brushless dc motor |
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| CN201310370320.1A CN103441716B (en) | 2013-08-22 | 2013-08-22 | A kind of drive circuit of three-phase brushless dc motor |
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| CN103441716A CN103441716A (en) | 2013-12-11 |
| CN103441716B true CN103441716B (en) | 2016-03-30 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008259340A (en) * | 2007-04-05 | 2008-10-23 | Sanyo Electric Co Ltd | Motor drive circuit |
| CN201349126Y (en) * | 2008-09-23 | 2009-11-18 | 陈赖容 | Protective circuit board of lead-acid battery pack for electrically driven vehicle |
| JP5337533B2 (en) * | 2009-02-27 | 2013-11-06 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | Motor drive circuit |
| CN102064677B (en) * | 2009-11-12 | 2014-12-03 | 立锜科技股份有限公司 | Control circuit for adjusting driving voltage in power converter |
| JP2012070540A (en) * | 2010-09-24 | 2012-04-05 | Nidec Techno Motor Holdings Corp | Motor |
| CN203457088U (en) * | 2013-08-22 | 2014-02-26 | 深圳市振华微电子有限公司 | Driving circuit of three-phase brushless DC motor |
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