CN103427002B - LED SMD nitrogen packaging technology - Google Patents
LED SMD nitrogen packaging technology Download PDFInfo
- Publication number
- CN103427002B CN103427002B CN201310383056.5A CN201310383056A CN103427002B CN 103427002 B CN103427002 B CN 103427002B CN 201310383056 A CN201310383056 A CN 201310383056A CN 103427002 B CN103427002 B CN 103427002B
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- Prior art keywords
- nitrogen
- smd
- glue
- led
- support
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- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
Abstract
The invention provides a kind of LED SMD nitrogen packaging technology, including: step 1, toast SMD support；Step 2, die bond and roasting glue；Step 3, bonding wire；Step 4, some glue and roasting glue；Step 1 is all carried out to step 4 in nitrogen environment.Owing to the present invention is in LED SMD encapsulation process, part or all of technical process is made to carry out in a nitrogen environment, therefore, the silver coating of SMD rack surface, LED chip electrode layer can be avoided to produce priming reaction with the sulfurous gas in air, oxygen and moisture content in high temperature environments form oxide layer or amass into dust and dirt, the molecular link improving postorder wire bonding process gold thread and support silver coating, LED chip electrode interlayer is made a concerted effort, it is to avoid the blind lamp loosely caused by bonding wire；Bake glue process is also to carry out in a nitrogen environment simultaneously, improves adhesive curing effect, improves lamp point yields and quality.
Description
Technical field
The present invention relates to LED encapsulation field, particularly to a kind of LED SMD nitrogen packaging technology.
Background technology
LED SMD packaging technology of the prior art is: SMD support baking → bonder die bond → roasting brilliant → weldering
A line → glue → roasting glue → finished product rushes blanking.Existing technique is to carry out, due to air in high temperature air environment
In sulfurous gas, moisture, dust all in encapsulation process LED SMD quality constitute infringement, reduce
Quality and yields.
Summary of the invention
The invention provides a kind of LED SMD nitrogen packaging technology, can be effectively improved after LED packaging technology
LED SMD quality.
For solving the problems referred to above, as one aspect of the present invention, it is provided that a kind of LED SMD nitrogen encapsulation
Technique, including: step 1, toast SMD support；Step 2, die bond and roasting glue；Step 3, bonding wire；Step
Rapid 4, some glue and roasting glue；Step 1 is all carried out to step 4 in nitrogen environment；
In step 4, in the first glue is placed in nitrogen oven by a. baking after stand-by；B. preliminary drying is roasted
After first glue and the second glue are mixed in proportion, add color dispersing agent, and after stirring with centrifugal blender, then
Secondary vacuum nitrogen baking box of putting into, inflated with nitrogen is heated up to 70 degrees Celsius after evacuation, takes out and treat after repeating secondary
With；C. the SMD support after bonding wire is proceeded to vacuum nitrogen baking box, design temperature 120 DEG C, toasts 30 minutes,
Taking-up is inserted after Ion Cleaning machine cleans stand-by；D. the SMD support of bonding wire is inserted in point gum machine, first point
Enter the glue of 1/2 carrier cup of SMD support, again the SMD support putting half cup glue is inserted vacuum nitrogen
Baking box, adds nitrogen in 70 degrees Celsius of lower evacuation and toasts 20 minutes, repeat secondary；E. by evacuation half
The SMD support of cup glue puts glue again to after brimmer, takes out to put into and adds nitrogen baking box, not evacuation, 150
Toast 6 hours under degree Celsius.
Further, step 1 includes: after being cleaned by SMD support, put into vacuum nitrogen baking box, first by it
It is re-filled with nitrogen after evacuation, then toasts.
Further, in step 1, repeat evacuation and add nitrogen secondary, toast 2 at one hundred and twenty degrees centigrade
Hour.
Further, in step 2, the SMD support of solid good wafer is inserted vacuum nitrogen baking box, makes
Lenses cured glue crystallizes in nitrogen environment.
Further, in step 2, first the SMD support of die bond is put into vacuum nitrogen baking box evacuation
After be re-filled with nitrogen, repeat secondary, and toast 2 hours under 150 degrees Celsius.
Further, in step 3, during bonding wire, nitrogen is applied to wire welding area to improve high temperature
The nitrogen gas concn of wire welding area, reduce harmful gas to the silver coating of gold thread and SMD support and chip electrode bonding wire
The impact of pulling force.
Further, also include: step 5, the LED SMD lamp point fallen for dispersion pellet through punching is put into and ground
Clean after grinding machine grinds, then be placed in baking in nitrogen baking box, so that the surface sand of LED SMD lamp point.
Owing to the present invention is in LED SMD encapsulation process, its technical process is to carry out in a nitrogen environment, because of
This, can avoid the silver coating of SMD rack surface in high temperature environments with the sulfurous gas in air, oxygen and water
Part produces priming reaction and forms oxide layer or amass into dust and dirt, thus causes directly affecting and reduce postorder bonding wire mistake
In journey, gold thread and support silver layer, the molecular link of LED chip electrode interlayer are made a concerted effort, thus bonding wire the most easily become blind lamp,
The problem that quality and yields reduce.
Simultaneously as encapsulation LED glue is all to crystallize to carry out in adding nitrogen environment, improve the property of packaging plastic
Can, improve the quality of LED SMD.
Detailed description of the invention
Hereinafter embodiments of the invention are described in detail, but the present invention can be defined by the claims and
The multitude of different ways covered is implemented.
It has been found that chip, support, glue used by LED SMD encapsulation, line is at room temperature (25 DEG C) or low
Temperature (less than 0 DEG C), humidity are the most stable less than quality in 20% environment；Higher than 120 DEG C, humidity is more than 50%
In environment, material quality declines or damages.Bonding wire bonding force size, cementing crystalline substance is good and bad and is placed in high temperature air
Duration, temperature, dust how many, the how rare direct relation of other active gasess.
It has been found that LED encapsulating products of the prior art is using (such as 3 months-2 a period of time
Year and more than) after, it may appear that dead lamp, the phenomenon of brightness step-down, the SMD mainly due to metal material props up
Frame plated surface silver layer, chip electrode layer, easy in high temperature environments and air during support toasts and bake crystalline substance
In sulfurous gas, oxygen and moisture content produce priming reaction and form oxide layer or amass into dust and dirt, directly affect and drop
In low postorder wire bonding process, gold thread is made a concerted effort with the molecular link of support silver layer, LED chip electrode interlayer, shows as weldering
Lamp the most easily become blind by line；Quality and yields reduce.
Applicant have also found that LED chip packaging plastic is easily reduced by the moisture in air or other impurity effects
Packaging effect, shows as LED SMD lamp easily dead lamp phenomenon.
It addition, during roasting glue, can produce during cementing crystalline substance due to LED SMD lamp luminescence glue surface or
Convex or recessed minute surface, forms LED SMD light distribution bur in hemispherical light-emitting area or depression；And
Ambient light is easily generated reflective under irradiating, directly reduce LED SMD light efficiency quality and the concordance of batch.
To this end, the invention provides one add nitrogen packaging technology following LED chip encapsulate necessary operation base
On plinth, change into carrying out in nitrogen environment by the workshop section of air ambient j ob impact quality；It addition, also carry
Supply a kind of surface sand grinding technics, it is achieved lamp point surface sand.
The invention provides a kind of LED SMD nitrogen packaging technology, including:
Step 1, toasts SMD support.Preferably, after step 1, the step that support cleans also is included: above-mentioned
The clear of support silver coating and chip electrode surface molecular level implemented by the SMD support Ion Cleaning machine that toasted
Wash, in order to get ready for die bond process.Preferably, Ion Cleaning process is: 10 minutes.
Step 2, die bond+roasting crystalline substance.SMD support (≤4 hours) within the surface activity phase after cleaning is complete
Become die bond process, place wafer by SMD encapsulation kind requirement, a wafer glue+die bond program wafer is placed in
In SMD support Lamp cup.
Step 3, bonding wire.Bonding wire high-temperature region is installed additional nitrogen blowing device, reduces spot area air concentration, carry
Rise soldering reliability.
Step 4, some glue and roasting glue.
Wherein, the step 1 of packaging technology is in nitrogen environment to whole in step 4 or at least one step
Carry out.
Owing to the present invention is in LED SMD encapsulation process, technical process is carried out in a nitrogen environment, therefore,
Can avoid the silver coating of SMD rack surface, chip electrode layer in high temperature environments with the sulfurous gas in air,
Oxygen and moisture content produce priming reaction and form oxide layer or amass into dust and dirt, thus cause directly affecting and reducing postorder
In wire bonding process, gold thread is made a concerted effort, so that bonding wire is the easiest with the molecular link of support silver layer, LED chip electrode interlayer
The problem that blind lamp, quality and yields reduce, promotes the solidification quality of LED packaging plastic simultaneously.
Preferably, step 1 includes: after SMD support dehumidifying, cleaning, put into vacuum nitrogen baking box, first
After its evacuation, it is re-filled with nitrogen, then toasts.Preferably, in step 1, evacuation is repeated
Add nitrogen secondary, at one hundred and twenty degrees centigrade baking 2 hours.Self-desiccation case takes out after SMD support cleans and put
Enter vacuum nitrogen baking box, after first evacuation, be filled with nitrogen (nitrogen content is 99.99%～99.999%, lower same),
Set baking temperature and the time carries out support baking.This technique representative value: repeat evacuation and add nitrogen secondary,
Toast 2 hours, temperature 120 DEG C
Preferably, in step 2, the SMD support of solid good wafer is inserted vacuum nitrogen baking box, makes crystalline substance
Sheet solidification glue crystallizes in nitrogen environment.Preferably, in step 2, first by vacuum nitrogen baking box evacuation
After be re-filled with nitrogen, repeat secondary, and toast 2 hours under 150 degrees Celsius.During roasting crystalline substance,
The SMD support of solid good wafer is inserted vacuum nitrogen baking box, the operation of inflated with nitrogen after repetition secondary vacuum pumping,
Design temperature 150 DEG C, roasting brilliant 2 hours, makes lenses cured glue crystallize in nitrogen environment, promotes die bonding
Adhesive curing quality, avoids silver-plated SMD support and LED chip electrode oxygen in this high-temperature process simultaneously
Change and fouling, promote for bonding force and create condition.
Preferably, in step 3, during bonding wire, nitrogen is applied to wire welding area to improve high temperature weldering
The nitrogen gas concn in line district, reduce harmful gas to the support of encapsulation and the infringement of chip.Specifically, to roasting
SMD support after crystalline substance carries out secondary ion cleaning (such as, clean the same operation support of setting and clean identical),
Promote the silver coating of SMD support, the surface cleanliness of LED chip electrode and activity further；I.e. turn after cleaning
Enter bonding wire operation.
In bonding wire operation, bonding wire craft requires that stent holder, typically temperature 150 DEG C, equally exists support plating
The easy oxidized possibility of silver layer and chip electrode gas aloft.Owing to this operation work in hot environment is typically in tens seconds
Complete, nitrogen blowing device can be added and improve wire welding area nitrogen gas concn, reduce other harmful gass and encapsulation is propped up
Frame and the infringement of chip.
Preferably, in step 4,
A. after the first glue is placed in vacuum nitrogen oven baking stand-by；Conventional packaging plastic be epoxy resin,
Silica gel.Such as, as a example by epoxide-resin glue, the first glue is WL-800A-14HT glue, and the second glue is
WL-800B-14HT glue.During operation, glue bucket can be inserted vacuum nitrogen baking box evacuation and add nitrogen, set
70 DEG C, 4 hours baking after stand-by.
B., after the first roasted for preliminary drying glue and the second glue being mixed in proportion, add color dispersing agent, and stir with centrifugal
After the machine of mixing stirs, being placed again into vacuum nitrogen baking box, inflated with nitrogen is heated up to 70 degrees Celsius after evacuation
(such as baking 20 minutes), takes out stand-by after repeating secondary；
C. the SMD support after bonding wire is proceeded to vacuum nitrogen baking box, design temperature 120 DEG C, toasts 30 minutes,
It is stand-by that (clean and set ibid) after Ion Cleaning machine cleans is inserted in taking-up；
D. the SMD support of bonding wire is inserted in point gum machine, first clicks and enters the glue of 1/2 carrier cup of SMD support,
Again the SMD support putting half cup glue is inserted vacuum nitrogen baking box, add nitrogen after evacuation Celsius in 70
The lower baking of degree 20 minutes, repeats secondary；
E. the SMD support of evacuation half cup glue is put again glue to after brimmer, takes out to put into and add nitrogen baking box,
Not evacuation, toasts 6 hours under 150 degrees Celsius.
This glue process repeatedly evacuation+nitrogen baking, reduces other harmful gass or dust and solidifies packaging plastic
The crystallization impact of process, significantly promotes packaging plastic to contact conductor, support silver coating, LED chip, glue cup
Bonding, make it solidify after product quality be protected.
The present invention add when adding nitrogen, epoxide-resin glue prebake conditions when LED SMD support is pre-baked nitrogen, die bond and
Carry out by the environment of evacuation+nitrogen+baking during roasting crystalline substance, half cup glue evacuation+nitrogen (brimmer during point glue
After glue+nitrogen baking) and utilize white fused alumina stone sand+grinding+ultrasonic cleaning+nitrogen to bake, substantially increase LED
Quality.
The present invention be in the procedure technology of LED encapsulation basis to directly affect the operation of LED SMD quality by
Air is carried out, changes into carrying out in nitrogen environment clean, that be dried, silver-plated of SMD of protection to greatest extent
Frame and the not oxidized dirt layer that formed of LED chip electrode, the molecular link of raising bonding wire is made a concerted effort；Chip sealing simultaneously
Process has isolated the impact on glue crystallization process of other gases and steam because of the existence of nitrogen, further promotes
The crystalline quality of LED chip packaging plastic, and then promote LED SMD quality of finished.
Preferably, also include: step 5, will fall for disperseing the LED SMD lamp point of pellet to put into grinding through punching
Clean after machine grinds, then be placed in baking in nitrogen baking box, so that the surface sand of LED SMD lamp point, with
Time leg the most oxidizable.After the above-mentioned LED encapsulated solidification of SMD support, fall technique by disjunctor on support through punching
LED SMD punching fall for disperse pellet LED SMD lamp point, load electrostatic prevention packaging bag stand-by.Take anti-quiet
Pellet lamp point LED SMD in electricity package cargo is some, puts in grinder barrel, adds the white of proper ratio
Emergy and water, start grinder and be ground, set 30 minutes；Rinse well with clear water after grinding, then
To clean up SMD pellet lamp point to put in ultrasonic washing unit after setting cleaning in 20 minutes, nitrogen is inserted in taking-up
Gas oven cooking cycle (not evacuation), sets 120 DEG C+4 hours.LED SMD lamp point after baking reinstalls anti-
The keeping of static electricity packing bag is stand-by.
The present invention adds grinding technics makes LED SMD lamp point surface sand, through sand surface no-reflection, light intensity
Being evenly distributed without bur and depression, uniformity, concordance are improved.So, can prevent from being applied to greatly
During the LED module of screen, produce reflective, so that the problem affecting viewing effect.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for this area
Technical staff for, the present invention can have various modifications and variations.All the spirit and principles in the present invention it
In, any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (7)
1. a LED SMD nitrogen packaging technology, including:
Step 1, toasts SMD support；
Step 2, die bond and roasting glue；
Step 3, bonding wire；
Step 4, some glue and roasting glue；
It is characterized in that,
Described step 1 is all carried out to step 4 in nitrogen environment；
In described step 4,
A. after the first glue is placed in nitrogen oven baking stand-by；
B. after the first roasted for preliminary drying glue and the second glue being mixed in proportion, add color dispersing agent, and with from
After heart blender stirs, being placed again into vacuum nitrogen baking box, inflated with nitrogen is heated up to after evacuation
70 degrees Celsius, take out stand-by after repeating secondary；
C. the SMD support after bonding wire is proceeded to vacuum nitrogen baking box, design temperature 120 DEG C, toasts 30
Minute, take out after inserting the cleaning of Ion Cleaning machine stand-by；
D. the SMD support of bonding wire is inserted in point gum machine, first click and enter 1/2 carrier cup of SMD support
Glue, again the SMD support putting half cup glue is inserted vacuum nitrogen baking box, under 70 degrees Celsius
Evacuation adds nitrogen and toasts 20 minutes, repeats secondary；
E. the SMD support of evacuation half cup glue is put again glue to after brimmer, take out to put into and add nitrogen
Baking box, not evacuation, toast 6 hours under 150 degrees Celsius.
LED SMD nitrogen packaging technology the most according to claim 1, it is characterised in that described step 1
Including:
After described SMD support is cleaned, put into vacuum nitrogen baking box, be first re-filled with after its evacuation
Nitrogen, then toasts.
LED SMD nitrogen packaging technology the most according to claim 2, it is characterised in that in described step 1
In, repeat evacuation and add nitrogen secondary, at one hundred and twenty degrees centigrade baking 2 hours.
LED SMD nitrogen packaging technology the most according to claim 1, it is characterised in that in described step 2
In, the SMD support of solid good wafer is inserted vacuum nitrogen baking box, makes lenses cured glue at nitrogen ring
Border crystallizes.
LED SMD nitrogen packaging technology the most according to claim 4, it is characterised in that in described step 2
In, it is re-filled with nitrogen after first the SMD support of die bond being put into vacuum nitrogen baking box evacuation, repeats
Secondary, and toast 2 hours under 150 degrees Celsius.
LED SMD nitrogen packaging technology the most according to claim 1, it is characterised in that in described step 3
In, during bonding wire, to wire welding area apply nitrogen with improve high temperature wire welding area nitrogen gas concn,
Reduce harmful gas to the silver coating of gold thread and SMD support and the impact of chip electrode bonding wire pulling force.
LED SMD nitrogen packaging technology the most according to any one of claim 1 to 6, it is characterised in that
Also include:
Step 5, will fall for clear after disperseing the LED SMD lamp point of pellet to put into grinding machine for grinding through punching
Wash, then be placed in baking in nitrogen baking box, so that the surface sand of LED SMD lamp point.
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| CN201310383056.5A CN103427002B (en) | 2013-08-28 | 2013-08-28 | LED SMD nitrogen packaging technology |
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| CN201310383056.5A CN103427002B (en) | 2013-08-28 | 2013-08-28 | LED SMD nitrogen packaging technology |
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| CN103427002B true CN103427002B (en) | 2016-08-10 |
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| CN103921354B (en) * | 2014-04-18 | 2016-01-06 | 武汉理工大学 | Foam concrete agitating device |
| CN105789413A (en) * | 2016-04-15 | 2016-07-20 | 中山市利光电子有限公司 | Baking process of LED bracket |
| CN106229391A (en) * | 2016-08-22 | 2016-12-14 | 安徽天众电子科技有限公司 | A kind of processing technology of New LED wick |
| CN113522685B (en) * | 2021-06-21 | 2022-11-25 | 昂纳信息技术（深圳）有限公司 | Dispensing method of sealing tube and glue filling system |
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| JP4314279B2 (en) * | 2007-02-01 | 2009-08-12 | 株式会社東芝 | Phosphor, method for manufacturing the same, and light emitting device |
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Effective date of registration: 20160914 Address after: 518000 Guangdong city of Shenzhen province Baoan District Fuyong Street Peace community liyuanlu Kaihui Mao Industrial Park C building third floor Patentee after: SHENZHEN GETRON PHOTOELECTRIC CO.,LTD. Address before: 450000, No. 6, building 1, No. 4, Bo song Road, Jinshui District, Henan, Zhengzhou Patentee before: Liu Zhenliang |
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Address after: 518000, Guangdong, Baoan District Fuyong Street Fenghuang community fourth industrial zone, plant 2, a layer of 101, two, 201, Shenzhen Patentee after: SHENZHEN GETRON CO.,LTD. Address before: 518000 Guangdong city of Shenzhen province Baoan District Fuyong Street Peace community liyuanlu Kaihui Mao Industrial Park C building third floor Patentee before: SHENZHEN GETRON PHOTOELECTRIC CO.,LTD. |
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