CN103426748A - Photoetching glue layer removing method and etching device - Google Patents
Photoetching glue layer removing method and etching device Download PDFInfo
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- CN103426748A CN103426748A CN2012101493596A CN201210149359A CN103426748A CN 103426748 A CN103426748 A CN 103426748A CN 2012101493596 A CN2012101493596 A CN 2012101493596A CN 201210149359 A CN201210149359 A CN 201210149359A CN 103426748 A CN103426748 A CN 103426748A
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Abstract
The invention relates to a photoetching glue layer removing method and an etching device. The photoetching glue layer removing method includes the steps of providing at least one wafer, forming a photoetching glue layer on the at least one wafer, taking the photoetching glue layer as a mask when ions are ejected, filling the photoetching glue layer with the high-dose ions when the ions are ejected, immersing and etching the at least one wafer to remove partial photoetching glue layer, and carrying out single-crystal rotary etching on one of the at least one wafer so as to remove the remaining photoetching glue layer. The photoetching glue layer which is filled with the high-dose ions is firstly immersed and etched, then the partial photoetching glue layer is removed, and the single-crystal rotary etching is carried out. Therefore, etching time of the single-crystal rotary etching process can be reduced, use amount of etching solutions in the single-crystal rotary etching process is reduced, and manufacturing cost is saved.
Description
Technical field
The present invention relates to field of semiconductor fabrication, particularly a kind of photoresist layer removal method and etching device.
Background technology
In semiconductor integrated circuit is made, form photoresist layer by photoetching process spin coating on Semiconductor substrate, to photoresist layer exposed and develop after define the zone of etching and Implantation, and, after completing etching or Implantation, remove the photoresist layer on Semiconductor substrate.
The existing method of removing photoresist adopts cineration technics usually, and in the cineration technics process, Semiconductor substrate is heated, and the photoresist layer on Semiconductor substrate is exposed in oxygen plasma or ozone and reacts simultaneously, removes photoresist layer.But adopt cineration technics easily to cause the residual of the oxidized or photoresist material of the silicon of semiconductor substrate surface, follow-uply also need to adopt wet-cleaned liquid to be cleaned Semiconductor substrate.
In order to overcome above-mentioned defect, the existing full wet method photoresist that has developed a kind of single-wafer is removed technique (single-wafer rotation etching technique), can be processed a wafer, its detailed process is at every turn: the wafer that will have photoresist layer to be etched is placed on the wafer clamper; Then the mixed solution of the sulfuric acid of heating and hydrogen peroxide is sprayed onto to the photoresist layer surface on wafer, rotates wafer simultaneously, remove the photoresist layer on wafer; Then, the wafer after the removal photoresist layer is cleaned.
Yet, while adopting said method to remove the photoresist layer of High dose implantation, the time is grown (time of general single wafer is wanted 5 ~ 6 minutes) very much, makes the consumption of the mixed solution of sulfuric acid and hydrogen peroxide increase, and make the yield reducation of the full wet-method etching equipment of single-wafer, increased manufacturing cost.
More methods of the removal about photoresist layer please refer to the United States Patent (USP) that the patent No. is US6630406B2.
Summary of the invention
The problem that the present invention solves is to provide a kind of removal method and etching device of photoresist layer, saves the consumption of etching solution, saves manufacturing cost.
For addressing the above problem, the embodiment of the present invention provides a kind of removal method of photoresist layer, comprising:
At least one wafer is provided, on described at least one wafer, is formed with photoresist layer, the mask of described photoresist layer during as Implantation, during Implantation, be injected with high dose ion in described photoresist;
Described at least one wafer is soaked to etching, removed the part photoresist layer;
A wafer in described at least one wafer is carried out to the single-wafer rotation etching, remove remaining photoresist layer.
Optionally, the mixed solution that the etching solution that described immersion etching adopts is sulfuric acid and hydrogen peroxide, or the mixed solution of sulfuric acid and ozone.
Optionally, during described immersion etching, the temperature of mixed solution is 100 ~ 150 degrees centigrade, and etch period is 30 seconds ~ 10 minutes.
Optionally, in the mixed solution of described sulfuric acid and hydrogen peroxide, the percent by volume of sulfuric acid and hydrogen peroxide is 2:1 ~ 4:1.
Optionally, the mixed solution that the etching solution that described single-wafer rotation etching adopts is sulfuric acid and hydrogen peroxide, or the mixed solution of sulfuric acid and ozone.
Optionally, during described single-wafer rotation etching, the temperature of mixed solution is 150 ~ 220 degrees centigrade, and etch period is 60 seconds ~ 180 seconds.
Optionally, in the mixed solution of sulfuric acid and hydrogen peroxide, the percent by volume of sulfuric acid and hydrogen peroxide is 2:1 ~ 4:1.
Optionally, the implantation dosage of described high dose ion injection is more than or equal to 5E14atoms/cm2.
Optionally, after described wafer is carried out to the single-wafer rotation etching, also comprise: described wafer is cleaned.
Optionally, described immersion etching and single-wafer rotation etching carry out in same etching device.
The embodiment of the present invention also provides a kind of etching device, comprising:
Soak etch chamber, for storing etching solution, and the material to be etched at least one wafer of putting into etching solution is carried out to etching;
Single-wafer rotation etching chamber, for fixing and make a wafer level rotation of at least one wafer after described immersion etch chamber is processed, and spray etching solution from described wafer top, and the material to be etched on wafer is carried out to etching.
Optionally, described immersion etch chamber comprises memory cell and the first heating unit, and described memory cell is for storing etching solution; Described the first heating unit is heated for the etching solution to memory cell.
Optionally, described single-wafer rotation etching chamber comprises fixed cell, spray unit, and wherein, described fixed cell is used for fixedly wafer, and makes the wafer level rotation; Spray unit is for spraying etching solution to crystal column surface from the wafer top.
Optionally, described single-wafer rotation etching chamber also comprises the second heating unit, for the etching solution to spray unit, is heated.
Optionally, described single-wafer rotation etching chamber also comprises cleaning unit, for surface and the back side of the wafer to after etching, is cleaned.
Optionally, described etching device also comprises transmission unit, between immersion etch chamber and single-wafer rotation etching chamber, transmitting wafer.
Optionally, described etching device also comprises feeding unit, for to memory cell and spray unit, supplying etching solution.
Optionally, described immersion etch chamber is carried out etching to a plurality of wafers simultaneously.
Compared with prior art, technical solution of the present invention has the following advantages:
Photoresist layer for High dose implantation, first it is soaked to etching, remove the photoresist layer of part, then it is carried out to the single-wafer rotation etching, can reduce the etch period in single-wafer rotation etching process, thereby reduced the use amount of etching solution in single-wafer rotation etching process, saved cost of manufacture.
The mixed solution that the etching solution that described immersion etching adopts is sulfuric acid and hydrogen peroxide, in described mixed solution, the percent by volume of sulfuric acid and hydrogen peroxide is 2:1 ~ 4:1, the temperature of mixed solution is 100 ~ 150 degrees centigrade, etch period is 30 seconds ~ 10 minutes, while soaking etching, wafer is in the whole mixed solution that is immersed in sulfuric acid and hydrogen peroxide, mixed solution is from side and the lower regional photoetching glue material of surface dissolution implantation dosage of photoresist layer, and progressively infiltrate through photoresist layer inside, the photoresist layer of bulk is come off from the surface of wafer, remove the most photoresist layer of crystal column surface.
The mixed solution that the etching solution that rotation etching adopts is sulfuric acid and hydrogen peroxide, during described single-wafer rotation etching, the temperature of mixed solution is 150 ~ 220 degrees centigrade, etch period is 60 seconds ~ 180 seconds, in described mixed solution, the percent by volume of sulfuric acid and hydrogen peroxide is 2:1 ~ 4:1, removed most photoresist layer owing to soaking in etching process, during the single-wafer rotation etching, the temperature of mixed solution is higher than 150 degrees centigrade, and in etching process, there is wafer can produce rotary centrifugal force, need to be from the photoresist layer surface in etching process etching down more bit by bit, on wafer, remaining part photoresist layer is easy to be removed, make the etch period of single-wafer rotation etching significantly reduce with respect to existing single-wafer etch period, during the single-wafer rotation etching, the consumption of mixed solution significantly reduces thereupon, save cost of manufacture and increased single-wafer rotation etching output.
The etching device of the embodiment of the present invention can be realized being soaked etching in same etching device is first soaking etch chamber to the material to be etched on wafer, and then carry out the single-wafer rotation etching in single-wafer rotation etching chamber, reduced and soaked the middle time of staying transformed between etching technics and single-wafer rotation etching technique, and reduced the defects such as particle of bringing in the transportation.
The accompanying drawing explanation
The schematic flow sheet that Fig. 1 is embodiment of the present invention photoresist layer removal method;
Fig. 2 ~ Fig. 4 is the cross-sectional view that embodiment of the present invention photoresist layer is removed process;
The structural representation that Fig. 5 is embodiment of the present invention etching device.
Embodiment
During the mask of existing photoresist layer when injecting as high dose ion, the ion of high dose make photoresist layer produce to be difficult to the mixing etching solution that is dissolved in existing sulfuric acid and hydrogen peroxide material (such as: amorphous carbon), this just makes and adopts the full wet-etching technology of monocrystalline when removing the photoresist layer of High dose implantation, make the removal time significantly elongate, and the etching solution after etching can not reuse due to the restriction of the factors such as concentration and existing etching machine bench, cause the significant wastage of etching solution, and make the output of the full wet-method etching equipment of existing monocrystalline be affected.
For addressing the above problem, the inventor proposes a kind of removal method and etching device of photoresist layer, the removal method of wherein said photoresist layer, comprise: at least one wafer is provided, be formed with photoresist layer on described at least one wafer, the mask of described photoresist layer during as Implantation, during Implantation, be injected with high dose ion in described photoresist; Described at least one wafer is soaked to etching, removed the part photoresist layer; A wafer in described at least one wafer is carried out to the single-wafer rotation etching, remove remaining photoresist layer.Photoresist layer for High dose implantation, first it is soaked to etching, remove the photoresist layer of part, then it is carried out to the single-wafer rotation etching, can reduce the etch period in single-wafer rotation etching process, thereby reduced the use amount of etching solution in single-wafer rotation etching process, saved cost of manufacture.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.When the embodiment of the present invention is described in detail in detail, for ease of explanation, schematic diagram can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
With reference to figure 1, the schematic flow sheet of the removal method that Fig. 1 is embodiment of the present invention photoresist layer comprises:
Step S201, provide at least one wafer, on described at least one wafer, is formed with photoresist layer, and the mask of described photoresist layer during as Implantation, during Implantation, be injected with high dose ion in described photoresist;
Step S202, soaked etching to described at least one wafer, removes the part photoresist layer;
Step S203, carry out the single-wafer rotation etching to a wafer in described at least one wafer, removes remaining photoresist layer.
Fig. 2 ~ Fig. 4 is the cross-sectional view that embodiment of the present invention photoresist layer is removed process.
With reference to figure 2, at least one wafer 300 is provided, be formed with photoresist layer 301 on described wafer 300, the mask of described photoresist layer 301 during as Implantation, during Implantation, be injected with high dose ion in described photoresist.The quantity of described wafer 300 can be 1 batch (25) or many batches, can be also any amount of 1 ~ 25, in the present embodiment, using 1 wafer as example to set forth purpose of the present invention.
The backing material of described wafer 300 can be monocrystalline silicon (Si), monocrystalline germanium (Ge) or SiGe (GeSi), carborundum (SiC); Can be also silicon-on-insulator (SOI), germanium on insulator (GOI); Perhaps can also be for other material, such as the III such as GaAs-V compounds of group.Be formed with the semiconductor device (not shown) on described wafer 300, such as: transistor, diode, electric capacity, inductance etc.
Described photoresist layer 301 has the opening in corresponding Implantation zone, the described photoresist layer 301 of take is mask, described wafer 300 is carried out to the Implantation of high dose, form doped region 302 in the substrate of wafer 300, such as: described doped region 302 can be transistorized source/drain region.After the Implantation that carries out high dose, due to the impact of high dose ion, photoresist layer 301 can form the material that a part is difficult to be dissolved in etching solution (such as: amorphous carbon).The implantation dosage that described high dose ion is injected is more than or equal to 5E14atoms/cm
2.
In other embodiments of the invention, also form on described wafer 300 and remain the injection material layer, described photoresist layer 301 is formed on the surface for the treatment of the injection material layer, as treating the injection material layer, carries out the mask of high dose ion while injecting.
With reference to figure 3, described at least one wafer 300 is soaked to etching, remove part photoresist layer 301.
The mixed solution that the etching solution that described immersion etching (wet bench soak etch) adopts is sulfuric acid and hydrogen peroxide, the perhaps mixed solution of sulfuric acid and ozone, the mixed solution that the etching solution that the present embodiment adopts is sulfuric acid and hydrogen peroxide, in described mixed solution, the percent by volume of sulfuric acid and hydrogen peroxide is 2:1 ~ 4:1.During described immersion etching, the temperature of mixed solution is 100 ~ 150 degrees centigrade, etch period is 30 seconds ~ 10 minutes, while soaking etching, wafer 300 is whole being immersed in acid tank 30, and the sulfuric acid in acid tank 30 and the mixed solution of hydrogen peroxide 31 be from side and the lower regional photoetching glue material of surface dissolution implantation dosage of photoresist layer 301, and progressively infiltrates through photoresist layer 301 inside, the photoresist layer of bulk is come off from the surface of wafer, remove the most photoresist layer of crystal column surface.
Described immersion etching can be carried out in existing wet-method etching equipment (acid tank equipment), restriction due to factors such as acid tank capacities of equipment, sulfuric acid and hydrogen peroxide mixed solution are the highest in existing acid tank equipment can only be heated to 150 degrees centigrade of left and right, and the heating-up temperature of the removal speed of the photoresist layer of High dose implantation and efficiency and sulfuric acid and hydrogen peroxide mixed solution is positive correlation, existing acid tank equipment is difficult to the photoresist layer of High dose implantation is removed clean.In acid tank, solution can be reused, soak etching and can carry out etching to the photoresist layer on a plurality of wafers simultaneously, can carry out etching to 1 batch of (25) wafer such as soaking etching simultaneously, also can carry out etching to any amount or the single wafer of 1 ~ 25.
Described immersion etching also can be carried out in the follow-up etching device provided of the present invention, and the immersion etch chamber of described etching device can be carried out etching to 1 batch of (25) wafer simultaneously, also can carry out etching to any amount or the single wafer of 1 ~ 25.
With reference to figure 4, after being soaked etching, a wafer in described at least one wafer is carried out to the single-wafer rotation etching, remove shown in remaining photoresist layer 301(Fig. 3).
The single-wafer rotation etching can only be processed a wafer at every turn, therefore when a lot of wafers same soak etching after, need a plurality of wafers to after the immersion etching one by one carry out the single-wafer rotation etching.In single-wafer rotation etching process, wafer clamper 33 is wafer 300 wafer 300 is horizontally rotated fixedly, and the jet pipe 32 that is positioned at the wafer top sprays etching solutions to wafer 300 surfaces, and remaining photoresist layer on wafer 300 is carried out to etching.The fixed form of 33 pairs of wafers of described wafer clamper is absorption or mechanical grip.
The mixed solution that the etching solution that described single-wafer rotation etching adopts is sulfuric acid and hydrogen peroxide, the perhaps mixed solution of sulfuric acid and ozone, the mixed solution that the etching solution that the present embodiment adopts is sulfuric acid and hydrogen peroxide, during described single-wafer rotation etching, the temperature of mixed solution is 150 ~ 220 degrees centigrade, etch period is 60 seconds ~ 180 seconds, in described mixed solution, the percent by volume of sulfuric acid and hydrogen peroxide is 2:1 ~ 4:1, soak in etching process and removed most photoresist layer, during the single-wafer rotation etching, the temperature of mixed solution is higher than 150 degrees centigrade, and in etching process, wafer can produce rotary centrifugal force, need to be from the photoresist layer surface in etching process etching down more bit by bit, on wafer 300, remaining part photoresist layer is easy to be removed, make the etch period of single-wafer rotation etching significantly reduce with respect to existing single-wafer etch period, during the single-wafer rotation etching, the consumption of mixed solution significantly reduces thereupon, save cost of manufacture and increased single-wafer rotation etching output.
Described single-wafer rotation etching can adopt existing single-wafer rotation etching equipment, also can use the etching device of the follow-up introduction of the present invention.
After described wafer is carried out to the single-wafer rotation etching, also need surface and the back side of described wafer are cleaned, remove residual etching solution and particle in etching process.
The embodiment of the present invention also provides a kind of etching device, and with reference to figure 5, described etching device 40 comprises:
Soak etch chamber 42, for storing etching solution, and the material to be etched at least one wafer of putting into etching solution is carried out to etching;
Single-wafer rotation etching chamber 41, for fixing and make a wafer level rotation of at least one wafer after described immersion etch chamber 42 is processed, and spray etching solution from described wafer top, and the material to be etched on wafer is carried out to etching.
Described immersion etch chamber 42 comprises memory cell 421 and the first heating unit 420, and described memory cell 421 is for storing etching solution; Described the first heating unit 420 is heated for the etching solution to memory cell.While soaking etching, wafer is put into to etching solution, etching solution carries out etching to the material to be etched on wafer, soak etch chamber 42 and can realize that the single-wafer etching also can realize polycrystalline circle etching (batch processing), such as described immersion etch chamber 42 can be carried out etching to 1 batch of (25) wafer simultaneously, also can carry out etching to any amount or the single wafer of 1 ~ 25.
Described single-wafer rotation etching chamber 41 comprises fixed cell 411, spray unit 414, the second heating unit 413, cleaning unit 412, wherein, described fixed cell 411 comprises grip unit and the rotary unit (not shown) that can be connected with grip unit, for a fixing wafer from soaking etch chamber 42 processing, and make the wafer level rotation; Spray unit 414 is for spraying etching solution to crystal column surface from the wafer top; The second heating unit 413, heated for the etching solution to spray unit 414; Cleaning unit 412, cleaned for surface and the back side of the wafer to after etching.
The fixed form of 411 pairs of wafers of fixed cell comprises the mode of absorption and mechanical grip.
Described spray unit 414 is jet pipe, shower nozzle or other device.
The etching solution of the low capacity in the second 413 pairs of heating units spray unit 414 be heated to be electric heating or microwave heating, firing rate is fast, temperature is high, the mode of heating of described the second heating unit 413 also can adopt other mode.
Described etching device 40 also comprises transmission unit 43, between immersion etch chamber 42 and single-wafer rotation etching chamber 41, transmitting wafer.Described transmission unit 43 also can spread out of wafer or import into etching device 40.
Described etching device 40 also comprises feeding unit 44, for to memory cell and spray unit, supplying etching solution.Described feeding unit 44 can be supplied single solution also can supply mixed solution, and for example: described feeding unit 44 can be supplied the mixed solution of sulfuric acid and hydrogen peroxide, and sulfuric acid and hydrogen peroxide are realized the configuration of volume ratio at feeding unit 44.
Adopt above-mentioned etching device 40 can realize being soaked etching in same etching device is first soaking etch chamber 42 to the material to be etched on wafer, and then carry out the single-wafer rotation etching in single-wafer rotation etching chamber 41, reduce the middle time of staying of soaking etching technics and the conversion of single-wafer rotation etching technique, and reduced the defects such as particle of bringing in the transportation.In removal technique such as the photoresist layer at high dose, first in soaking etch chamber 42, soaked etching and removed the part photoresist on wafer, then transmission unit 43 is rotated etching by wafer transfer to single-wafer rotation etching chamber 41, remove remaining photoresist on wafer, soaking the conversion of etching technics and single-wafer rotation etching technique carries out in etching device 40 inside, make the interlude that soaks etching technics and the conversion of single-wafer rotation etching technique significantly reduce, improved efficiency, and prevent the defects such as particle that may bring in the outside transportation of etching device 40.
Adopt above-mentioned etching device 40 can also realize, at same etching device, the material to be etched on wafer first is rotated to etching in single-wafer rotation etching chamber 41, and then soaked etching in soaking etch chamber 42, meet the diversified demand of technique, reduced single-wafer rotation etching technique and soaked the time of staying that etching technics is changed, having reduced the defects such as particle of bringing in the transportation.
Adopt above-mentioned etching device 40 can also realize being soaked etching in soaking etch chamber 42, the requirement of then being cleaned in single-wafer rotation etching chamber 41, realize the cleaning of the single wafer after etching by the gross, make the cleaning after etching more thorough, prevent the generation of the residual and defect of particle and etching solution.
To sum up, removal method and the etching device of the photoresist layer that the embodiment of the present invention provides, photoresist layer for High dose implantation, first it is soaked to etching, remove the photoresist layer of part, then it is carried out to the single-wafer rotation etching, can reduce the etch period in single-wafer rotation etching process, thereby reduced the use amount of etching solution in single-wafer rotation etching process, saved cost of manufacture.
The mixed solution that the etching solution that described immersion etching adopts is sulfuric acid and hydrogen peroxide, in described mixed solution, the percent by volume of sulfuric acid and hydrogen peroxide is 2:1 ~ 4:1, the temperature of mixed solution is 100 ~ 150 degrees centigrade, etch period is 30 seconds ~ 10 minutes, while soaking etching, wafer is in the whole mixed solution that is immersed in sulfuric acid and hydrogen peroxide, mixed solution is from the photoresist material in the side of photoresist layer and the lower zone of surface dissolution implantation dosage, and progressively infiltrate through photoresist layer inside, the photoresist layer of bulk is come off from the surface of wafer, remove the most photoresist layer of crystal column surface.
The mixed solution that the etching solution that rotation etching adopts is sulfuric acid and hydrogen peroxide, during described single-wafer rotation etching, the temperature of mixed solution is 150 ~ 220 degrees centigrade, etch period is 60 seconds ~ 180 seconds, in described mixed solution, the percent by volume of sulfuric acid and hydrogen peroxide is 2:1 ~ 4:1, removed most photoresist layer owing to soaking in etching process, during the single-wafer rotation etching, the temperature of mixed solution is higher than 150 degrees centigrade, and in etching process, wafer can produce rotary centrifugal force, need to be from the photoresist layer surface in etching process etching down more bit by bit, on wafer, remaining part photoresist layer is easy to be removed, make the etch period of single-wafer rotation etching significantly reduce with respect to existing single-wafer etch period, during the single-wafer rotation etching, the consumption of mixed solution significantly reduces thereupon, save cost of manufacture and increased single-wafer rotation etching output.
The etching device of the embodiment of the present invention can be realized being soaked etching in same etching device is first soaking etch chamber to the material to be etched on wafer, and then carry out the single-wafer rotation etching in single-wafer rotation etching chamber, reduced and soaked the middle time of staying transformed between etching technics and single-wafer rotation etching technique, and reduced the defects such as particle of bringing in the transportation.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not break away from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection range of technical solution of the present invention.
Claims (18)
1. the removal method of a photoresist layer, is characterized in that, comprising:
At least one wafer is provided, on described at least one wafer, is formed with photoresist layer, the mask of described photoresist layer during as Implantation, during Implantation, be injected with high dose ion in described photoresist;
Described at least one wafer is soaked to etching, removed the part photoresist layer;
A wafer in described at least one wafer is carried out to the single-wafer rotation etching, remove remaining photoresist layer.
2. the removal method of photoresist layer as claimed in claim 1, is characterized in that, the mixed solution that the etching solution that described immersion etching adopts is sulfuric acid and hydrogen peroxide, or the mixed solution of sulfuric acid and ozone.
3. the removal method of photoresist layer as claimed in claim 2, is characterized in that, during described immersion etching, the temperature of mixed solution is 100 ~ 150 degrees centigrade, and etch period is 30 seconds ~ 10 minutes.
4. the removal method of photoresist layer as claimed in claim 2, is characterized in that, in the mixed solution of described sulfuric acid and hydrogen peroxide, the percent by volume of sulfuric acid and hydrogen peroxide is 2:1 ~ 4:1.
5. the removal method of photoresist layer as claimed in claim 1, is characterized in that, the mixed solution that the etching solution that described single-wafer rotation etching adopts is sulfuric acid and hydrogen peroxide, or the mixed solution of sulfuric acid and ozone.
6. the removal method of photoresist layer as claimed in claim 5, is characterized in that, during described single-wafer rotation etching, the temperature of mixed solution is 150 ~ 220 degrees centigrade, and etch period is 60 seconds ~ 180 seconds.
7. the removal method of photoresist layer as claimed in claim 5, is characterized in that, in the mixed solution of described sulfuric acid and hydrogen peroxide, the percent by volume of sulfuric acid and hydrogen peroxide is 2:1 ~ 4:1.
8. the removal method of photoresist layer as claimed in claim 1, is characterized in that, the implantation dosage that described high dose ion is injected is more than or equal to 5E14atoms/cm
2.
9. the removal method of photoresist layer as claimed in claim 1, is characterized in that, after described wafer is carried out to the single-wafer rotation etching, also comprises: described wafer is cleaned.
10. the removal method of photoresist layer as claimed in claim 1, is characterized in that, described immersion etching and single-wafer rotation etching carry out in same etching device.
11. an etching device, is characterized in that, comprising:
Soak etch chamber, for storing etching solution, and the material to be etched at least one wafer of putting into etching solution is carried out to etching;
Single-wafer rotation etching chamber, for fixing and make a wafer level rotation of at least one wafer after described immersion etch chamber is processed, and spray etching solution from described wafer top, and the material to be etched on wafer is carried out to etching.
12. etching device as claimed in claim 11, is characterized in that, described immersion etch chamber comprises memory cell and the first heating unit, and described memory cell is for storing etching solution; Described the first heating unit is heated for the etching solution to memory cell.
13. etching device as claimed in claim 11, is characterized in that, described single-wafer rotation etching chamber comprises fixed cell, spray unit, and wherein, described fixed cell is used for fixedly wafer, and makes the wafer level rotation; Spray unit is for spraying etching solution to crystal column surface from the wafer top.
14. etching device as claimed in claim 13, is characterized in that, described single-wafer rotation etching chamber also comprises the second heating unit, for the etching solution to spray unit, is heated.
15. etching device as claimed in claim 13, is characterized in that, described single-wafer rotation etching chamber also comprises cleaning unit, for surface and the back side of the wafer to after etching, is cleaned.
16. etching device as claimed in claim 11, is characterized in that, described etching device also comprises transmission unit, between immersion etch chamber and single-wafer rotation etching chamber, transmitting wafer.
17. etching device as described as claim 12 or 13 is characterized in that described etching device also comprises feeding unit, for to memory cell and spray unit, supplying etching solution.
18. etching device as claimed in claim 11, is characterized in that, described immersion etch chamber is carried out etching to a plurality of wafers simultaneously.
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Application publication date: 20131204 |