CN104882364A - Effective photoresist removal method - Google Patents
Effective photoresist removal method Download PDFInfo
- Publication number
- CN104882364A CN104882364A CN201510147639.7A CN201510147639A CN104882364A CN 104882364 A CN104882364 A CN 104882364A CN 201510147639 A CN201510147639 A CN 201510147639A CN 104882364 A CN104882364 A CN 104882364A
- Authority
- CN
- China
- Prior art keywords
- photoresistance
- wafer
- photoresist
- dry
- photoresist removal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
Abstract
The invention overcomes the deficiencies of the prior art, provides an effective photoresist removal method capable of improving the product yield. The adopted technical scheme in the invention is the effective photoresist removal method, which comprises a first step of immersing a wafer in need of photoresist removal into a photoresist stripper for 30-60 minutes; a second step of taking the wafer out of the photoresist stripper to be washed with water and dried; and a third step of placing the dried wafer into a plasma device and removing photoresist residues using a dry-type method. The invention can be widely applied to the field of LED chips.
Description
Technical field
The method of a kind of effective removal photoresistance of the present invention, belongs to LED chip technical field.
Background technology
Photoresistance conventional in manufacture of semiconductor adopts photoetching technique by the wafer surface of the Graphic transitions on mask, and then is removed by photoresistance.Current LED industry is removed photoresistance and is mainly adopted wet etching, and the wafer being about to remove photoresistance is placed in blocking solution of delustering and soaks then washing and dry up, and the method exists photoresistance and removes sordid drawback, affects photo electric and the product yield of product.
Summary of the invention
Instant invention overcomes the deficiency that prior art exists, provide a kind of method that can improve yield, effectively the removal photoresistance of product.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is: a kind of method of effective removal photoresistance, implements according to the following steps:
The first step: the wafer need removing photoresistance is placed in blocking solution of delustering and soaks 30min ~ 60min;
Second step: take out washing and dry up from blocking solution of delustering;
3rd step: the wafer dried up is placed in plasma apparatus and adopts dry method to remove remaining photoresistance.
Preferably, the substrate bias power of described ion unit is 300W, and ionizing power is 500W, and etching period is 130s, and gas flow is 15 ± 1sccm.
The beneficial effect that the present invention compared with prior art has is: the method that the present invention adopts dry-and wet-type to combine effectively can remove photoresistance, utilizes the mode of plasma and introducing ultraviolet light to etch remaining photoresistance, by regulating O
2, Ar gas the illumination of gas flow when ultraviolet light reached the object effectively removing remaining photoresistance, so thorough elimination remains because of photoresistance the photo electric impact caused product, improves the yield of product.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is described further.
Fig. 1 is process chart of the present invention.
Fig. 2 is the dry-etching schematic diagram in the present invention.
Embodiment
As shown in Figure 1 and Figure 2, the method for a kind of effective removal photoresistance of the present invention, implement according to the following steps:
The first step: the wafer need removing photoresistance is placed in blocking solution of delustering and soaks 30min ~ 60min;
Second step: take out washing and dry up from blocking solution of delustering;
3rd step: the wafer dried up is placed in plasma apparatus and adopts dry method to remove remaining photoresistance.
The substrate bias power of described ion unit is 300W, and ionizing power is 500W, and etching period is 130s, and gas flow is 15 ± 1sccm.
The dry etching method that the present invention relates to, carries out according to following steps:
A, substrate bias power is set as 300w, inductively coupled plasma power setting is 500w, and etching period is set as 130s, and gas flow is set as 14sccm;
B, the material to be etched with mask is put into reaction chamber;
C, the material taking-up that will have etched, insert in chemical solution and remove mask;
D, material is put into measuring instrument, the etch depth of test material five positions;
The whole process temperature of described dry etching method controls room temperature 20 ± 2 DEG C.
The test result obtained is in table 1:
| Test event | On | In | Under | Left | Right | Mean depth | Uniformity % | Evenness |
| Numerical value | 86156 | 85757 | 85903 | 86249 | 86384 | 86089.8 | 0.36% | 255.896 |
Table 1(unit: Ethylmercurichlorendimide)
The uniformity shown in data is 0.36%, and be less than uniformity when gas flow is 10sccm and 20sccm, the quality of product is higher, and finished surface is more smooth.
Or carry out according to following step:
Gas flow in step a is set as 15sccm, and other condition is all identical with embodiment one with step.
The test result obtained is in table 2:
| Test event | On | In | Under | Left | Right | Mean depth | Uniformity % | Evenness |
| Numerical value | 86238 | 85971 | 86159 | 86453 | 86537 | 86271.6 | 0.33% | 227.767 |
Table 2(unit: Ethylmercurichlorendimide)
The uniformity shown in data is 0.33%, and be less than uniformity when gas flow is 10sccm and 20sccm, the quality of product is higher, and finished surface is more smooth.
Also can carry out in the steps below:
Gas flow in step a is set as 16sccm, and other condition is all identical with embodiment one with step.
The test result obtained is in table 3:
| Test event | On | In | Under | Left | Right | Mean depth | Uniformity % | Evenness |
| Numerical value | 86330 | 86081 | 86328 | 86631 | 86760 | 86426 | 0.39% | 269.919 |
Table 3(unit: Ethylmercurichlorendimide)
The uniformity shown in data is 0.39%, and be less than uniformity when gas flow is 10sccm and 20sccm, the quality of product is higher, and finished surface is more smooth.
By reference to the accompanying drawings embodiments of the invention are explained in detail above, but the present invention is not limited to above-described embodiment, in the ken that those of ordinary skill in the art possess, various change can also be made under the prerequisite not departing from present inventive concept.
Claims (2)
1. effectively remove a method for photoresistance, it is characterized in that, implement according to the following steps:
The first step: the wafer need removing photoresistance is placed in blocking solution of delustering and soaks 30min ~ 60min;
Second step: take out washing and dry up from blocking solution of delustering;
3rd step: the wafer dried up is placed in plasma apparatus and adopts dry method to remove remaining photoresistance.
2. the method for a kind of effective removal photoresistance according to claim 1, is characterized in that, the substrate bias power of described ion unit is 300W, and ionizing power is 500W, and etching period is 130s, and gas flow is 15 ± 1sccm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510147639.7A CN104882364A (en) | 2015-03-31 | 2015-03-31 | Effective photoresist removal method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510147639.7A CN104882364A (en) | 2015-03-31 | 2015-03-31 | Effective photoresist removal method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104882364A true CN104882364A (en) | 2015-09-02 |
Family
ID=53949812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510147639.7A Pending CN104882364A (en) | 2015-03-31 | 2015-03-31 | Effective photoresist removal method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104882364A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109541896A (en) * | 2018-11-21 | 2019-03-29 | 合肥新汇成微电子有限公司 | A kind of novel removal photoresist mode in etch process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6030754A (en) * | 1996-02-05 | 2000-02-29 | Texas Instruments Incorporated | Photoresist removal without organic solvent following ashing operation |
| US6358676B1 (en) * | 1999-10-22 | 2002-03-19 | Mosel Vitelic Inc. | Method for reworking photoresist |
| CN103426748A (en) * | 2012-05-14 | 2013-12-04 | 中芯国际集成电路制造(上海)有限公司 | Photoetching glue layer removing method and etching device |
-
2015
- 2015-03-31 CN CN201510147639.7A patent/CN104882364A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6030754A (en) * | 1996-02-05 | 2000-02-29 | Texas Instruments Incorporated | Photoresist removal without organic solvent following ashing operation |
| US6358676B1 (en) * | 1999-10-22 | 2002-03-19 | Mosel Vitelic Inc. | Method for reworking photoresist |
| CN103426748A (en) * | 2012-05-14 | 2013-12-04 | 中芯国际集成电路制造(上海)有限公司 | Photoetching glue layer removing method and etching device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109541896A (en) * | 2018-11-21 | 2019-03-29 | 合肥新汇成微电子有限公司 | A kind of novel removal photoresist mode in etch process |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150902 |
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| RJ01 | Rejection of invention patent application after publication |