CN104752196A - Post-treatment method for removing photoresist and manufacturing method of semiconductor device - Google Patents
Post-treatment method for removing photoresist and manufacturing method of semiconductor device Download PDFInfo
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- CN104752196A CN104752196A CN201310754270.7A CN201310754270A CN104752196A CN 104752196 A CN104752196 A CN 104752196A CN 201310754270 A CN201310754270 A CN 201310754270A CN 104752196 A CN104752196 A CN 104752196A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
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Abstract
The invention discloses a post-treatment method for removing a photoresist and a manufacturing method of a semiconductor device. The post-treatment method for removing the photoresist comprises the following steps: performing first cleaning on the semiconductor device after the photoresist is removed by using HF (Hydrogen Fluoride) solution; performing second cleaning on the semiconductor device after the first cleaning by using ozone water. According to the method, the semiconductor device is cleaned by using the HF solution and the ozone water in sequence, so that the photoresist with smaller particle size remained on the semiconductor device is removed, and the semiconductor device which meet the requirement on surface clean degree of the semiconductor device of the exiting process is obtained.
Description
Technical field
The application relates to semiconductor integrated circuit manufacture technology field, the post-processing approach removed in particular to a kind of photoresist and the manufacture method of semiconductor device.
Background technology
In the manufacturing process of semiconductor integrated circuit, after the making completing semiconductor device, need to remove the photoresist on semiconductor device surface.The processing step of existing removal photoresist is adopt ashing or wet-etching technology to remove photoresist on semiconductor device, then adopts the method for wet-cleaned to remove residual photoresist on semiconductor device surface.But existing wet-cleaned is difficult to the photoetching glue residue thoroughly removed on semiconductor device surface, thus produce defect in the semiconductor device, and then the performance such as the stability affecting semiconductor device.
Such as, in the manufacturing process of source-drain electrode, need to form photoresist on the substrate comprising grid, then remove the photoresist of grid both sides, next form source-drain electrode by ion implantation in grid both sides, and form dielectric layer above source-drain electrode.In the process of photoresist removing grid both sides, the substrate of grid both sides can produce photoetching glue residue.These photoetching glue residues can cause the dielectric layer structure of follow-up formation uneven, make dielectric layer easily under the effect of grid voltage, produce leakage current, and then reduce the stability of semiconductor device.
Again such as, in the manufacturing process of fleet plough groove isolation structure, need to form photoresist successively on substrate, then etch photoresist and substrate formation shallow trench, next remove photoresist, finally fill in shallow trench and form isolated substance layer.In the process removing photoresist, a part of photoetching glue residue can be attached in shallow trench, the isolated substance layer of follow-up formation and the adhesion of shallow trench is declined, thus affects the isolation effect of fleet plough groove isolation structure.
At present, the common agents of the residual photoresist of cleaning is SPM(H
2sO
4and H
2o
2) and SC1(H
2o
2, NH
4oH and H
2o) solution.In the process adopting the residual photoresist of SPM and SC1 solution cleaning, the concentration of SPM and SC1 solution and serviceability temperature are too high, can cause damage to semiconductor device.Meanwhile, along with reducing gradually of semiconductor integrated circuit processing procedure, more and more higher to the requirement of semiconductor device clean surface degree.Existing wet-cleaned has been difficult to remove the residue that on semiconductor device surface, particle size is less, thus cannot meet the requirement of existing technique to semiconductor device clean surface degree, and then the device property making semiconductor device can not reach designed.
Summary of the invention
The application aims to provide the post-processing approach and the manufacture method of semiconductor device that a kind of photoresist removes, and is difficult to meet the problem of existing technique to the requirement of semiconductor device clean surface degree to solve wet-cleaned in reprocessing that existing photoresist removes.
To achieve these goals, according to an aspect of the application, provide the post-processing approach that a kind of photoresist is removed, the method comprises: step S1, adopts HF solution to carry out first time cleaning to the semiconductor device after removal photoresist; Step S2, adopts Ozone Water to carry out second time cleaning to the semiconductor device after first time cleaning.
Further, in the post-processing approach that the application is above-mentioned, step S1 and S21 ~ 3 time are repeated.
Further, in the post-processing approach that the application is above-mentioned, HF solution comprises HF and H
2o, and HF and H in HF solution
2the volume ratio of O is 1:500 ~ 3000.
Further, in the post-processing approach that the application is above-mentioned, the mode that first time cleans is infusion method or rotary spray method; Adopt infusion method to carry out first time when cleaning, the temperature of HF solution is 20 ~ 30 DEG C, and soak time is 20 ~ 120s/ time; Adopt rotary spray method to carry out first time when cleaning, HF liquid inventory is the temperature of 1.2 ~ 2L/min, HF solution is 20 ~ 30 DEG C, and spray time is 5 ~ 80s/ time.
Further, in the post-processing approach that the application is above-mentioned, O in Ozone Water
3content be 10 ~ 100ppm.
Further, in the post-processing approach that the application is above-mentioned, the mode of second time cleaning is infusion method or rotary spray method; Adopt infusion method to carry out second time when cleaning, the temperature of Ozone Water is 20 ~ 30 DEG C, and soak time is 20 ~ 120s/ time; Adopt rotary spray to carry out second time when cleaning, the flow of Ozone Water is 1.2 ~ 2L/min, and the temperature of Ozone Water is 20 ~ 30 DEG C, and spray time is 20 ~ 120s/ time.
Further, in the post-processing approach that the application is above-mentioned, remove after the method for photoresist has also been included in last step S2, adopt nitrogen to dry up semiconductor device.
According to the another aspect of the application, provide a kind of manufacture method of semiconductor device, be included in the photoresist pending semiconductor functional areas being formed patterning, with the photoresist of patterning for mask etching semiconductor device to be etched, form semiconductor functional areas, remove the post-processing step of photoresist and photoresist removal, the post-processing approach of the photoresist removal that the post-processing approach that wherein photoresist is removed provides for the application.
Further, in the manufacture method of the above-mentioned semiconductor device of the application, semiconductor functional areas are any one in grid, groove and through hole.
Present invention also provides the manufacture method of another kind of semiconductor device, comprise the substrate being formed and comprise pending semiconductor functional areas, substrate forms photoresist, remove the photoresist in district to be implanted, the reprocessing that photoresist is removed, and treat the step that processing capacity district carries out ion implantation formation semiconductor functional areas, the post-processing approach of the photoresist removal that the post-processing approach that wherein photoresist is removed provides for the application.
Further, in the manufacture method of the above-mentioned semiconductor device of the application, semiconductor functional areas are any one in potential well, light dope device and source-drain electrode.
A kind of post-processing approach of photoresist removal of technical scheme of application the application and the manufacture method of semiconductor device, the application successively adopts HF solution and Ozone Water to clean the semiconductor device after removal photoresist successively, thus eliminate the less photoresist of particle size residual on semiconductor device, obtain the semiconductor device meeting existing technique and semiconductor device clean surface degree is required.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
The schematic flow sheet of the post-processing approach that the photoresist that Fig. 1 shows to be provided according to the embodiment of the present application is removed.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.
From background technology, in the reprocessing that existing photoresist is removed, wet-cleaned is difficult to meet the requirement of existing technique to semiconductor device clean surface degree.The applicant of the application studies the problems referred to above, and then proposes the post-processing approach of a kind of photoresist removal.As shown in Figure 1, the method comprises the photoresist removed on semiconductor device and the step of cleaning the semiconductor device after removing photoresist, wherein the step that the semiconductor device after removal photoresist cleans is comprised: step S1, adopt HF solution to carry out first time cleaning to the semiconductor device after removal photoresist; Step S2, adopts Ozone Water to carry out second time cleaning to the semiconductor device after first time cleaning.
In the post-processing approach that the above-mentioned photoresist of the application is removed, first by H existing in HF solution
2f
+react generation with the silica in the photoetching glue residue of semiconductor surface and be dissolved in H
2the accessory substance of O, thus remove the less photoresist of particle size residual on semiconductor device.Meanwhile, HF can also form hydrogen bond on the surface of semiconductor device, make semiconductor device present hydrophobic surface, and then the photoresist making particle size less is easy under the mechanical force of cleaning reagent and peels off.After the step of first time cleaning, Ozone Water is adopted to carry out second time cleaning to the semiconductor device after first time cleaning.In the second time cleaning step of the application, owing to having very active, that there is strong oxidation antozone in Ozone Water, therefore, it is possible to by the residue of oxidation Decomposition stripping semiconductor device non-oxidized substance on the surface, and then the residue of non-oxidized substance is peeled off under the mechanical force of cleaning reagent.
Further illustrate below with reference to embodiment the method that the application removes photoresist, the method comprises the following steps:
First HF solution is adopted to carry out first time cleaning to the semiconductor device after removal photoresist.In this step, in HF solution, the content of HF can affect the cleaning performance of the photoetching glue residue of semiconductor surface, and those skilled in the art can need according to actual process the content arranging HF in HF solution.In a kind of preferred implementation of the application, HF and H in HF solution
2the volume ratio of O is 1:500 ~ 3000.If the content of HF is too low, the effect of the photoetching glue residue of cleaning removal semiconductor surface can be poor; If the content of HF is too high, HF solution likely can react with part semiconductor device, thus causes damage to semiconductor device surface.
In the step of the above-mentioned first time cleaning of the application, those skilled in the art conventionally, can select the way of contact of cleaning reagent and semiconductor device, such as infusion method and rotary spray method.Wherein, infusion method is exactly by the etch residue of cleaning solution and semiconductor device surface, chemical reaction occurs in immersion process and dissolution reaches the object removing semiconductor device surface etch residue.Simple its efficiency of solution infusion method is often unsatisfactory, so be aided with the physical measure such as heating, ultrasonic, stirring toward contact while employing is soaked.The dissolving (or chemical reaction) that rotary spray method utilizes institute to spray cleaning reagent is used for the etch residue of dissolving semiconductor device surface, utilize the centrifugal action of High Rotation Speed simultaneously, make the liquid being dissolved with impurity depart from semiconductor device surface in time, the liquid of such semiconductor device surface always keeps very high purity.Simultaneously because the semiconductor device of sprayed cleaning reagent and rotation has higher relative velocity, so larger impulsive force can be produced reach the object removing adsorbing contaminant.
In a kind of preferred implementation that the application provides, carry out first time cleaning by infusion method to the semiconductor device after removal photoresist, comprise the following steps: under under 20 ~ 30 DEG C of temperature conditions, by HF and H
2the volume ratio of O is that the HF solution of 1:500 ~ 3000 is placed in rinse bath, and then clean immersing HF solution to the semiconductor device after removing photoresist, the time of immersion is 20 ~ 120 seconds/time.In the another kind of preferred implementation that the application provides, carry out first time cleaning by rotary spray method to the semiconductor device after removal photoresist, its concrete steps comprise: by HF and H
2the volume ratio of O be the HF solution spraying of 1:500 ~ 3000 to on the semiconductor device removed after photoresist, and make HF dissolution homogeneity be distributed on semiconductor device surface by low speed rotation (300 ~ 500rpm), the flow of HF solution is 1.2 ~ 2L/min; Under temperature is 20 ~ 30 DEG C of conditions, carry out first time cleaning to the semiconductor device after removal photoresist, the time of cleaning is 20 ~ 120 seconds/time.In semiconductor technology below 28nm processing procedure, rotary spray method is preferably adopted to carry out above-mentioned cleaning to semiconductor device.The HF solution that above-mentioned preferred implementation adopts has that concentration is low, serviceability temperature is high and consume low feature, therefore adopt this execution mode remove cleaning after semiconductor device on the surface reagent time, on semiconductor device surface, reagent can be removed uniformly, and can not cause new damage to obtained semiconductor device.
In the post-processing approach that the above-mentioned photoresist of the application is removed, after employing HF solution carries out the step of first time cleaning to the semiconductor device after removal photoresist, semiconductor device also exists the residue of some non-oxidized substances.In order to remove the residue of these non-oxidized substances, the application adopts Ozone Water to carry out second time cleaning to the semiconductor device after first time cleaning.In the second time cleaning step of the application, owing to having very active, that there is strong oxidation antozone in Ozone Water, therefore, it is possible to by the residue of oxidation Decomposition stripping semiconductor device non-oxidized substance on the surface, and then the residue of non-oxidized substance is peeled off under the mechanical force of cleaning reagent.Meanwhile, monatomic silicon can also be oxidized into silicon dioxide by Ozone Water, thus the silicon eliminated on semiconductor device hangs key, avoids silicon to hang the easy adsorbing contaminant of key or particle.
In the step of the above-mentioned second time cleaning of the application, O in Ozone Water
3content can affect the cleaning performance of the photoetching glue residue of semiconductor surface, those skilled in the art can need to arrange O in Ozone Water according to actual process
3content.In a kind of preferred implementation of the application, O in Ozone Water
3content be 10 ~ 100ppm.After carrying out second time cleaning according to above-mentioned process conditions, the residue oxide of the non-oxidized substance in photoetching glue residue is removed, thus the photoresist except particle size residual on semiconductor device is less is removed, obtain the semiconductor device meeting existing technique and semiconductor device clean surface degree is required.
In the step of the above-mentioned second time cleaning of the application, those skilled in the art conventionally, can select the way of contact of cleaning reagent and semiconductor device, such as infusion method and rotary spray method.In a kind of preferred implementation that the application provides, by infusion method, second time cleaning is carried out to the semiconductor device after first time cleaning, comprise the following steps: under 20 ~ 30 DEG C of temperature conditions, preparation O
3content is the Ozone Water of 10 ~ 100ppm, and then immersed in Ozone Water by the semiconductor device after first time cleaning and clean, the time of immersion is 20 ~ 120 seconds/time.In another preferred embodiment that the application provides, carry out second time cleaning by rotary spray method to the semiconductor device after first time cleaning, its concrete steps comprise: under 20 ~ 30 DEG C of temperature conditions, by O
3content be on the semiconductor device after the Ozone Water of 10 ~ 100ppm sprays to first time cleaning, and make Ozone Water be evenly distributed on semiconductor device surface by low speed rotation (300 ~ 500rpm), the flow of Ozone Water is 1.2 ~ 2L/min, carry out second time cleaning to the semiconductor device after first time cleaning, the time of cleaning is 20 ~ 120 seconds/time.In semiconductor technology below 28nm processing procedure, rotary spray method is preferably adopted to carry out above-mentioned cleaning to semiconductor device.The Ozone Water that above-mentioned preferred implementation adopts has that concentration is low, serviceability temperature is high and consume low feature, therefore adopt this execution mode remove cleaning after semiconductor device on the surface reagent time, on semiconductor device surface, reagent can be removed uniformly, and can not cause new damage to obtained semiconductor device.
In the post-processing approach that the above-mentioned photoresist of the application is removed, those skilled in the art can according to the requirement of existing technique to semiconductor device clean surface degree, select the cycle-index repeating first time cleaning and second time cleaning,, preferably repeat 1-3 time in the application's such scheme such as 1 time, 2 times, for 3 times or repeatedly etc.After completing last and taking turns circulation step, those skilled in the art can also select to remove according to prior art the method for semiconductor device cleaning fluid on the surface after cleaning, such as toasts, dries up.In a kind of Alternate embodiments of the application, the semiconductor device after adopting nitrogen to dry up cleaning.Adopt this execution mode remove cleaning after semiconductor device on the surface reagent time, on semiconductor device surface, reagent can be removed uniformly, and can not cause new damage to obtained semiconductor device.
In the post-processing approach that the above-mentioned photoresist of the application is removed, those skilled in the art according to prior art, can select method and the process conditions of removing photoresist.Such as adopt Oxygen plasma ashing technique or etching technics.Wherein be preferably Oxygen plasma ashing technique.In a kind of Alternate embodiments of the application, the process conditions of the photoresist adopting Oxygen plasma ashing technique to remove on semiconductor device comprise: with O
2and N
2h
2for reacting gas, O
2flow be 4000 ~ 6000sccm, N
2h
2flow be 200 ~ 600, chamber pressure is 500 ~ 1000mT, and exciting power is 600 ~ 1200W, and the processing time is 60 ~ 180
s.
Simultaneously, present invention also provides a kind of manufacture method of semiconductor device, be included in the photoresist pending semiconductor functional areas being formed patterning, with the photoresist of patterning for mask etching semiconductor device to be etched, form semiconductor functional areas, remove the post-processing step of photoresist and photoresist removal, the post-processing approach of the photoresist removal that the post-processing approach that wherein photoresist is removed provides for the application.Preferably, semiconductor functional areas are any one in grid, groove and through hole.
Present invention also provides the manufacture method of another kind of semiconductor device, comprise the substrate being formed and comprise pending semiconductor functional areas, substrate forms photoresist, remove the photoresist in district to be implanted, the reprocessing that photoresist is removed, and treat the step that processing capacity district carries out ion implantation formation semiconductor functional areas, the post-processing approach of the photoresist removal that the post-processing approach that wherein photoresist is removed provides for the application.Preferably, semiconductor functional areas are any one in potential well, light dope device and source-drain electrode.
The method of removal photoresist provided by the present invention will be further illustrated below with specific embodiment.
Embodiment 1
Present embodiments provide the post-processing approach that a kind of photoresist is removed, comprise the following steps:
Carry out first time cleaning to the semiconductor device after removing photoresist, its concrete steps comprise: at 20 DEG C, by HF and H
2the volume ratio of O is on the HF solution spraying of the 1:500 semiconductor device after first time cleaning, and makes HF dissolution homogeneity be distributed on semiconductor device surface by low speed rotation (300rpm), and HF liquid inventory is 1.2L/min; Carry out first time cleaning to the semiconductor device after removing photoresist, the time of cleaning is 60 seconds.
Carry out second time cleaning to the semiconductor device after first time cleaning, its concrete steps comprise: at 20 DEG C, by O
3content be on the semiconductor device after the Ozone Water of 10ppm sprays to first time cleaning, and make Ozone Water be evenly distributed on semiconductor device surface by low speed rotation (300rpm), the flow of Ozone Water is 1.5L/min; Carry out second time cleaning to the semiconductor device after first time cleaning, the time of cleaning is 80 seconds.
Semiconductor device after adopting nitrogen to dry up cleaning.
Embodiment 2
Present embodiments provide the post-processing approach that a kind of photoresist is removed, comprise the following steps:
First time cleaning is carried out to the semiconductor device after removing photoresist, comprises the following steps: at 30 DEG C, by HF and H
2the volume ratio of O is that the HF solution of 1:1600 is placed in rinse bath, and then the semiconductor device after removing photoresist is immersed HF solution and clean, the time of cleaning is 45 seconds.
Carry out second time cleaning to the semiconductor device after first time cleaning, its concrete steps comprise: at 30 DEG C, by O
3content be on the semiconductor device after the Ozone Water of 55ppm sprays to first time cleaning, and make Ozone Water be evenly distributed on semiconductor device surface by low speed rotation (300rpm), the flow of Ozone Water is 1.2L/min; Carry out second time cleaning to the semiconductor device after first time cleaning, the time of cleaning is 120 seconds.
Repeat the cleaning of above-mentioned first time and second time cleaning step 2 times, and the semiconductor device after adopting nitrogen to dry up cleaning.
Embodiment 3
Present embodiments provide the post-processing approach that a kind of photoresist is removed, comprise the following steps:
Carry out first time cleaning to the semiconductor device after removing photoresist, its concrete steps comprise: at room temperature, by HF and H
2the volume ratio of O is on the HF solution spraying of the 1:3000 semiconductor device after first time cleaning, and makes HF dissolution homogeneity be distributed on semiconductor device surface by low speed rotation (500rpm), and the flow of HF is 2L/min; Carry out first time cleaning to the semiconductor device after removing photoresist, the time of cleaning is 5 seconds.
Carry out second time cleaning to the semiconductor device after first time cleaning, its concrete steps comprise: at room temperature, by O
3content be on the semiconductor device after the Ozone Water of 100ppm sprays to first time cleaning, and make Ozone Water be evenly distributed on semiconductor device surface by low speed rotation (500rpm), the flow of Ozone Water is 2L/min; Carry out second time cleaning to the semiconductor device after first time cleaning, the time of cleaning is 20 seconds.
Repeat the cleaning of above-mentioned first time and second time cleaning step 3 times, and the semiconductor device after adopting nitrogen to dry up cleaning.
Comparative example 1
This comparative example provides the post-processing approach that a kind of photoresist is removed, and comprises the following steps:
Carry out first time cleaning to the semiconductor device after removing photoresist, its concrete steps comprise: by H
2sO
4and H
2o
2volume ratio be on the SPM solution spraying of the 2:1 semiconductor device after first time cleaning, and make SPM dissolution homogeneity be distributed on semiconductor device surface by low speed rotation (100 ~ 300rpm), the flow of SPM solution is 1.2L/min; Under SPM solution temperature is 150 DEG C of conditions, carry out first time cleaning to the semiconductor device after removing photoresist, the time of cleaning is 60 seconds.
Carry out second time cleaning to the semiconductor device after first time cleaning, its concrete steps comprise: by H
2o
2, NH
4oH and H
2the volume ratio of O is on the semiconductor device after the SC1 of 1:2:50 sprays to first time cleaning, and makes SC1 be evenly distributed on semiconductor device surface by low speed rotation (300 ~ 500rpm), and the flow of SC1 solution is 2L/min; Under SC1 solution temperature is 150 DEG C of conditions, under temperature is 45 DEG C of conditions, carry out second time cleaning to the semiconductor device after first time cleaning, the time of cleaning is 80 seconds.
Test:
Observed in embodiment 1 to 4 and comparative example 1 by SEM and clean pattern that is front and the rear semiconductor device surface of second time cleaning for the first time, and the method that employing is added up calculates the clearance of photoetching glue residue, its result asks for an interview table 1.
Table 1
| Photoetching glue residue clearance | |
| Embodiment 1 | 92.6% |
| Embodiment 2 | 93.4% |
| Embodiment 3 | 93.2% |
| Comparative example 1 | 73.6% |
As can be seen from Table 1, photoetching glue residue clearance 73.6% in comparative example 1, and in the embodiment of the present application 1 to 3, the clearance of photoetching glue residue is 92.6 ~ 93.4%.As can be seen from above-mentioned data analysis, the technical scheme that application the application provides, make the photoetching glue residue on semiconductor device obtain obvious minimizing, the clearance of photoetching glue residue is improved significantly.
As can be seen from the above description, the application's the above embodiments achieve following technique effect:
(1) the application cleans semiconductor device by successively adopting HF solution and Ozone Water, thus eliminate the less photoresist of particle size residual on semiconductor device, obtain the semiconductor device meeting existing technique and semiconductor device clean surface degree is required.
(2) cleaning provided in the application is removed in the method for photoresist, and the cleaning reagent (HF solution and Ozone Water) adopted has that concentration is low, serviceability temperature is low and consume low feature, therefore can not cause damage to semiconductor device.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (11)
1. a post-processing approach for photoresist removal, it is characterized in that, described method comprises:
Step S1, adopts HF solution to carry out first time cleaning to the described semiconductor device after removal photoresist; And
Step S2, adopts Ozone Water to carry out second time cleaning to the described semiconductor device after described first time cleaning.
2. post-processing approach according to claim 1, is characterized in that, repeats described step S1 and S2 at least 1 ~ 3 times.
3. post-processing approach according to claim 1 and 2, is characterized in that, described HF solution comprises HF and H
2o, and HF and H in described HF solution
2the volume ratio of O is 1:500 ~ 3000.
4. post-processing approach according to claim 3, is characterized in that, the mode of described first time cleaning is infusion method or rotary spray method;
When adopting infusion method to carry out the cleaning of described first time, the temperature of HF solution is 20 ~ 30 DEG C, and soak time is 20 ~ 120s/ time;
When adopting rotary spray method to carry out the cleaning of described first time, HF liquid inventory is the temperature of 1.2 ~ 2L/min, HF solution is 20 ~ 30 DEG C, and spray time is 5 ~ 80s/ time.
5. post-processing approach according to claim 1, is characterized in that, O in described Ozone Water
3content be 10 ~ 100ppm.
6. post-processing approach according to claim 5, is characterized in that, the mode of described second time cleaning is infusion method or rotary spray method;
When adopting infusion method to carry out the cleaning of described second time, the temperature of Ozone Water is 20 ~ 30 DEG C, and soak time is 20 ~ 120s/ time;
When adopting rotary spray to carry out the cleaning of described second time, the flow of Ozone Water is 1.2 ~ 2L/min, and the temperature of Ozone Water is 20 ~ 30 DEG C, and spray time is 20 ~ 120s/ time.
7. post-processing approach according to any one of claim 1 to 6, is characterized in that, after completing last step S2, adopts nitrogen to dry up described semiconductor device.
8. the manufacture method of a semiconductor device, be included in the photoresist pending semiconductor functional areas being formed patterning, with the photoresist of described patterning for semiconductor device to be etched described in mask etching, form semiconductor functional areas, and remove described photoresist, it is characterized in that, after removing described photoresist, adopt the method according to any one of claim 1 to 7 to carry out reprocessing.
9. manufacture method according to claim 8, is characterized in that, described semiconductor functional areas are any one in grid, groove and through hole.
10. the manufacture method of a semiconductor device, comprise the substrate being formed and comprise pending semiconductor functional areas, form photoresist over the substrate, remove the photoresist in described district to be implanted, and ion implantation formation semiconductor functional areas are carried out to described pending functional areas, it is characterized in that, after removing the photoresist in described district to be implanted, adopt the method according to any one of claim 1 to 7 to carry out reprocessing.
11. manufacture methods according to claim 10, is characterized in that, described semiconductor functional areas are any one in potential well, light dope device and source-drain electrode.
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| CN110813887A (en) * | 2019-10-21 | 2020-02-21 | 苏州晶洲装备科技有限公司 | Hydrofluoric acid cleaning device and hydrofluoric acid cleaning method for display panel |
| CN114815532A (en) * | 2022-04-19 | 2022-07-29 | 度亘激光技术（苏州）有限公司 | Photoresist removing method and semiconductor device manufacturing method |
| CN115739819A (en) * | 2023-01-10 | 2023-03-07 | 帝京半导体科技(苏州)有限公司 | Ultra-high clean cleaning process and application of aluminum alloy parts of semiconductor equipment |
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