JP2001102369A - Resist-removing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of surely removing a resist from a substrate which is partially turned into a silicon oxide with a small amount of chemicals, without leaving residues. SOLUTION: When a resist pattern 110 with a silicon oxide layer 109 formed on its surface is removed, most of the resist pattern 110 is removed from the surface of a substrate 101 through ashing. Thereafter, the substrate 101 is subjected to a cleaning treatment where a dilute hydrofluoric acid treatment and an ozone water treatment are carried out alternately and repeatedly by the use of a spin-cleaning device to remove a resist residue 110a composed of silicon oxide and a resist component, and the resist pattern 110 is completely removed from the substrate 101, without leaving residues behind.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for removing a resist, and more particularly, to a method for removing a resist whose surface is made of silicon oxide.

[0002]

2. Description of the Related Art In a semiconductor device manufacturing process, various processes are performed using a resist pattern formed on a substrate as a mask. In particular, in the case of performing pattern processing with a high aspect ratio in an etching process using a resist pattern as a mask, a resist pattern serving as a mask includes:
High dry etching resistance is required.

As a method of forming a resist pattern having high etching resistance, there is a CARL resist process, which is performed as follows. First, a lower resist made of an organic anti-reflection film or a novolak resist is thickly applied on a substrate, baked at a high temperature and hardened, and then an upper resist film is thinly applied thereon. Next, after performing pattern exposure, development processing is performed using an alkaline solution, whereby only the upper layer resist is patterned. Next, a silylating agent is dropped on the substrate to silylate the surface of the upper resist. Next, the surface of the upper resist is oxidized by oxygen plasma to form a silicon oxide (SiOx) layer, and the lower resist is dry-developed. Thereby, as shown in FIG. 5, a lower resist 23 and an upper resist 24 are formed on the layer 22 to be etched on the surface of the substrate 21.
A resist pattern 26 having a SiOx layer 25 formed on the surface of the upper resist 24 is formed.

[0004] In the resist pattern thus obtained, the resist surface is covered with a SiOx layer.
Dry etching resistance is higher than normal resist patterns.

[0005] In addition to the CARL resist process described above, a resist pattern formed by a silylation process, a silicon-containing resist process, or the like has a resist surface covered with an SiOx layer and has high dry etching resistance. . For this reason, such a resist pattern forming process is applied not only to the manufacture of semiconductor devices but also to the processing of micro machines.

When the resist pattern 26 formed by such a process is removed from the substrate 21, an ashing process using fluorine-containing oxygen plasma or a process using an alkaline stripping solution is performed. After removing most of the resist pattern 26, sulfuric acid (H ₂ SO
₄₎ - hydrogen peroxide (H ₂ O ₂₎ (and conducting the washing treatment by immersion in a mixed solution) of aqueous solution of sulfuric acid and hydrogen peroxide aqueous solution.

[0007]

However, in such a resist removing method, the resist partially siliconized cannot be completely removed from the substrate, and the resist is not removed from the substrate after the cleaning process is completed. In this case, a resist residue mainly composed of silicon oxide or an organic substance remains. In particular, when the resist is removed and the substrate is to be reused, the resist in a state where the silicon oxide layer is completely left on the surface is removed, so that the resist residue easily remains on the substrate. Then, when the resist pattern is formed again in a state where the resist residue remains, problems such as a short-circuit of the resist pattern due to the resist residue occur. For this reason, etching using the resist pattern as a mask cannot perform patterning of a desired shape, which hinders reuse of the substrate.

Further, in the cleaning treatment in the above-described resist removing method, since the substrate is immersed in sulfuric acid-hydrogen peroxide, a large amount of chemical solution is required, and there are also problems such as an increase in cost and a large amount of waste liquid treatment. is there.

Accordingly, an object of the present invention is to provide a method capable of reliably removing a resist partially siliconized from a substrate without leaving a residue with a small amount of a chemical solution.

[0010]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention is a method for removing a resist partially siliconized from a substrate, and includes a resist aging process or a resist stripping process. After exposing to liquid and peeling,
It is characterized in that a cleaning process in which dilute hydrofluoric acid treatment and ozone water treatment are alternately repeated is performed on the surface of the substrate. In this cleaning process, a spin cleaning device is used.

In such a resist removing method, the resist partially converted to silicon oxide is first removed from the substrate by ashing or treatment with a stripping solution.
Since the resist residue remaining on the substrate in this state is composed of silicon oxide and other resist components, the silicon oxide-based residue is thereafter subjected to a cleaning process in which dilute hydrofluoric acid treatment and ozone water treatment are alternately performed. Is removed by dilute hydrofluoric acid treatment, and other resist component-based residues are removed by ozone water treatment.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which a method for removing a resist according to the present invention is applied to a manufacturing process of a semiconductor device will be described below in detail with reference to the drawings.

Here, in the resist removing step of each embodiment, a spin cleaning apparatus as shown in FIG. 1 is used. The spin cleaning apparatus includes a spin chuck 11 capable of holding the substrate 101 in a horizontal state, and nozzles 12 and 13 for supplying a chemical solution L onto the surface of the substrate 101 held on the spin chuck 11. ing. In such a spin cleaning apparatus, when the chemical liquid L is supplied onto the surface of the substrate 101 that has been rotated and held, the substrate 101
Due to the centrifugal force, the chemical solution L spreads over the entire surface of the substrate 101 and is further shaken off the substrate 101 and removed.

Next, a method of manufacturing a semiconductor device to which a resist removing step using such a spin cleaning apparatus is applied will be described.

(First Embodiment) First, as shown in FIG. 2A, a device isolation 10 is formed on a substrate 101 made of silicon.
2 and then the substrate 1 separated by the element isolation 102
After impurities are introduced into the surface layer of the substrate 101 by ion implantation, a gate oxide film 103 is formed on the surface of the substrate 101 to a thickness of 4 nm. Next, CVD (chemical vapor depos
)), a polysilicon film 104 is formed to a thickness of 150 nm on the gate oxide film 103, a tungsten silicide film 105 is formed to a thickness of 150 nm, and a silicon nitride (SiN) film 106 is formed to a thickness of 50 nm.
To a film thickness of

Next, a polyvinylphenol-based positive resist 107 is formed on the silicon nitride film 106 by 50.
After spin coating to a film thickness of 0 nm, baking treatment is performed at 110 ° C. for 60 seconds.

Next, a gate pattern having a designed gate length of 130 nm is transferred to the resist 107 by using an exposure apparatus. An example of the exposure conditions is shown below. Exposure device: ArF excimer laser scanner (exposure wavelength: 193 nm), reduction ratio: 、, numerical aperture (NA): 0.7, numerical aperture ratio (σ): 0.7, mask: chrome (Cr) mask.

Thereafter, the surface of the resist 107 is exposed to a silylating agent vapor to silylate the surface of the unexposed portion of the resist 107 to form a silylated layer 108 having a thickness of about 50 nm on the surface layer of the resist 107. . The following is an example of the silylation conditions. Equipment: chamber in coater developer, silylating agent: DMSDMA (dimethylsilyl-dimethyl)
amine), substrate temperature: 100 ° C, vapor pressure: 107 Pa, silylation time: 60 seconds.

Next, by performing dry development using a plasma processing apparatus, silicon and oxygen are combined in the surface layer of the silylated layer 108 to form a silicon oxide (SiOx) layer 109 having a thickness of 10 nm. Using the silicon oxide layer 109 as a mask, the resist 107 in the exposed portion is removed by etching to form a resist pattern 110. The following is an example of such dry development conditions. Plasma processing apparatus: TCP (transformer coupled plasma) processing apparatus, first step, gas and flow rate: methane tetrafluoride (CF ₄ ) = 50 sccm oxygen (O ₃ ) = 15 sccm, processing atmosphere pressure: 0.67 Pa, TCP power : 250 W, bias power: 15 W, processing time: 20 seconds, second step, gas and flow rate: oxygen (O ₃ ) = 80 sccm, sulfur dioxide (SO ₂ ) = 5 sccm, processing atmosphere pressure: 0.67 Pa, TCP power : 250 W, bias power: 40 W, processing time: 55 seconds. However, sccm is a standard cubic centimeter.

Next, after the resist pattern 110 is formed by the silylation process as described above, the line width measurement, the overlay accuracy measurement, and the defect inspection of the resist pattern 110 are performed. When the result of these measurements and inspections exceeds an allowable value, the substrate 101 is regenerated by removing the resist pattern 110.

A resist pattern 110 is placed on the substrate 101.
First, most of the resist pattern 110 is removed by performing an ashing process. An example of the ashing condition is shown below. Ashing device: down-flow type plasma asher, gas and flow rate: oxygen (O ₃ ) = 2500 sccm, methane tetrafluoride (CF ₄ ) = 150 sccm, nitrogen / hydrogen (N ₂ / H ₂ ) = 1100 sccm, pressure in processing atmosphere: 200 Pa, substrate temperature: 200 ° C., RF power: 2 kW, processing time: 180 seconds. However, nitrogen and hydrogen are used as forming gas.

In the state where the ashing process has been completed, as shown in FIG.
Silicon oxide, other resist components (organic substances), and a mixture thereof are left as a resist residue 110a.

Therefore, the surface of the substrate 101 is cleaned. Here, first, as shown in FIG. 2 (3), the substrate 101 is set on a spin chuck (not shown) of the spin cleaning apparatus, and the substrate 101 is rotated at 300 rotations / minute, and the rotation state is established. About 25 ml / sec of diluted hydrofluoric acid (concentration: 1%) is dropped from the nozzle 12 as a chemical solution L onto the surface of a certain substrate 101 for 10 seconds to dilute the surface of the substrate 101 with diluted hydrofluoric acid.

Next, as shown in FIG. 2D, ozone water [a solution obtained by dissolving pure ozone (O ₃ ) as a chemical solution L from the nozzle 13 on the surface of the substrate 101 which is continuously rotating. Here, the ozone concentration is 30 ppm].
The surface of the substrate 101 is treated with ozone water for 25 seconds at a rate of 25 ml / sec.

Then, the dilute hydrofluoric acid treatment and the ozone water treatment are repeated for five cycles. Thus, the resist residue 110a on the substrate 101 is removed.

After the above, a series of resist removing steps are completed by performing pure rinsing and drying the substrate 101.

Next, as shown in FIG. 2 (5), a silylation process similar to that described with reference to FIG. 2 (1) is applied above the substrate 101 from which the resist residue (110a) has been removed. The resist pattern 110 is formed again. Then, line width measurement, overlay accuracy measurement, and defect inspection of the formed resist pattern 110 are performed. If the results of these measurements and inspections are not within the allowable values, the above-described resist removal step and formation of the resist pattern 110 are performed again. When it is confirmed that the results of these measurements and inspections are within the allowable range, the process proceeds to the next step.

In the next step, as shown in FIG.
Using the resist pattern 110 as a mask, the silicon nitride film 106 is etched, and then the tungsten silicide film 105 is etched. The etching of the silicon nitride film 106 is performed by using methane tetrafluoride (CF ₄ ) and argon (Ar). The tungsten silicide film 105 is etched using methane tetrafluoride (CF ₄ ) and chlorine gas (Cl ₂ ). When these etchings are completed, the uppermost silicon oxide layer 109 constituting the resist pattern 110 and a part of the underlying silylated layer 108 are partially removed by the etching.

Next, as shown in FIG. 2 (7), the resist pattern 110 is removed. Here, a series of removal steps similar to those described with reference to FIGS. 2 (2) to 2 (4), that is, an ashing process and a subsequent cleaning process are performed to completely remove the resist pattern 110 from the substrate 101. To be removed.

Next, as shown in FIG. 2 (8), the polysilicon film 10 is formed using the silicon nitride film 106 as a mask.
4 and the gate oxide film 103 are etched. In these etchings, hydrogen bromide (HBr), chlorine (C
l ₂ ) and etching using oxygen (O ₂ ).

As described above, the gate electrode 111 made of the polysilicon 4 and the tungsten silicide 105 is formed on the substrate 101 via the gate oxide film 103.

According to such a method of manufacturing a semiconductor device, when removing the resist pattern 110 having the silicon oxide layer 109 from the substrate 101 as described with reference to FIG. Is performed, most of the resist pattern 110 is removed from the substrate 101, and then the resist residue 11 left on the substrate 101 is removed.
Oa is removed by performing a washing process in which a dilute hydrofluoric acid treatment and an ozone water treatment are alternately repeated. Since the resist residue 110a is composed of silicon oxide and other resist components (ie, organic substances), the silicon oxide-based residue is removed by dilute hydrofluoric acid treatment, and the organic residue is removed by ozone water treatment. . At this time, after removing the silicon oxide-based residue by dilute hydrofluoric acid treatment and removing the silicon oxide covering the surface of the organic-based residue, an ozone water treatment is performed. Is efficiently removed. Therefore,
The resist residue 110a can be reliably removed from the substrate 101. As a result, the substrate 101 can be reused, and the manufacturing cost of the semiconductor device can be reduced.

Furthermore, since the cleaning process is performed using a spin cleaning device, the amount of the chemical solution L (ie, diluted hydrofluoric acid and ozone water) can be reduced. In addition, since the dilute hydrofluoric acid and the ozone water are alternately supplied from the nozzles 12 and 13 to the substrate 101 rotated and held on the spin chuck, the cleaning process is performed. The increase can be suppressed.

(Second Embodiment) First, as shown in FIG. 3A, an element isolation 102 and a gate oxide film 10 are formed on a silicon substrate 101 in the same manner as in the first embodiment.
3. A polysilicon film 104, a tungsten silicide film 105, and a silicon nitride film 106 are formed.

Next, on the silicon nitride film 106, a novolak-based resist is
After spin-coating to a thickness of nm, a baking treatment is performed at 200 ° C. for 60 seconds. Next, after a methacrylate-based silicon-containing resist 202 is spin-coated to a thickness of 200 nm, a baking process is performed at 110 ° C. for 60 seconds.

Next, a gate pattern having a designed gate length of 130 nm is formed using an exposure apparatus.
Transfer to 02. An example of the exposure conditions is shown below. Exposure device: ArF excimer laser scanner (exposure wavelength: 193 nm), reduction ratio: 1/4, numerical aperture NA: 0.7, numerical aperture ratio σ: 0.7, mask: chrome (Cr) mask.

Thereafter, for example, TMAH (te
By performing a development process using an alkali developer such as tramethylammonium hydroxide, only the silicon-containing resist 202 is patterned.

Next, as shown in FIG. 3B, by performing dry development using a plasma processing apparatus, silicon and oxygen are combined on the surface layer of the silicon-containing resist 202 to form an oxidized film having a thickness of 30 nm. Silicon (SiO
x) The layer 203 is formed and the silicon oxide layer 2
The lower resist 201 is removed by etching using the mask 03 as a mask to form a resist pattern 204. The following is an example of such dry development conditions. Plasma processing apparatus: TCP processing apparatus, gas and flow rate: oxygen (O ₂ ) = 80 sccm, sulfur dioxide (SO ₂ ) = 5 sccm, processing atmosphere pressure: 0.67 Pa, TCP power: 250 W, bias power: 40 W, processing time : 55 seconds.

Next, after the resist pattern 204 is formed by the above-described silicon-containing resist process, the line width of the resist pattern 204, overlay accuracy measurement, and defect inspection are performed. If the results of these measurements and inspections exceed the allowable values, the resist pattern 204 is removed and the substrate is regenerated.

To remove the resist pattern 204,
First, most of the resist pattern 204 is removed by immersing the substrate 101 in an alkali stripper (25 ° C.) for 10 minutes. However, in this state, FIG.
As shown in (3), silicon oxide and other resist components (organic substances) and a mixture thereof are left above the substrate 101 as a resist residue 204a.

Therefore, the surface of the substrate 101 is cleaned to remove the resist residue 204a from the substrate 101. At this time, the cleaning process of the surface of the substrate 101 is performed in the same manner as described with reference to FIGS. 2 (3) and (4) in the first embodiment.

As described above, as shown in FIG. 3D, after removing the resist residue (204a) from the substrate 101, a pure rinse and drying of the substrate 101 are performed, thereby performing a series of resist removing steps. Terminate.

Next, as shown in FIG. 3 (5), above the substrate 101 from which the resist pattern (204) including the resist residue has been completely removed, using FIGS. 3 (1) and 3 (2). The resist pattern 204 is formed again by the same silicon-containing resist process as described. Then, line width measurement, overlay accuracy measurement, and defect inspection of the formed resist pattern 204 are performed. If the results of these measurements and inspections are not within the allowable values, the above-described resist peeling step and the formation of the resist pattern 204 are performed again. When it is confirmed that the results of these measurements and inspections are within the allowable range, the process proceeds to the next step.

Although not shown here, the resist pattern 204 is used as a mask in the first embodiment shown in FIG.
The silicon nitride film 106 and the tungsten silicide film 105 are etched in the same manner as described with reference to (6). After that, the resist pattern 204 remaining on the substrate 101 is completely removed by performing a series of removal steps similar to those described with reference to FIGS. Next, as described in the first embodiment with reference to FIG. 2 (8), using the silicon nitride film 106 as a mask,
By etching the polysilicon film 104 and the gate oxide film 103, a gate electrode made of the polysilicon 104 and the tungsten silicide 105 is formed on the substrate 101 via the gate oxide film 103.

In the method for manufacturing such a semiconductor device, the silicon oxide layer 203 described with reference to FIG.
When the resist pattern 204 having the pattern (1) is removed from the substrate 101, first, most of the resist pattern 204 is removed from the substrate 101 using a stripping solution.
Since the resist residue 204a remaining on the substrate 01 is removed by performing a cleaning process in which a dilute hydrofluoric acid process and an ozone water process are alternately performed, the resist is reliably removed from the substrate 101 as in the first embodiment. The residue 204a can be removed, and the same effect can be obtained. Further, since the cleaning process is performed using the spin cleaning device, it is possible to increase the throughput and reduce the amount of the chemical solution L used, as in the first embodiment.

Third Embodiment First, as shown in FIG. 4A, a device isolation 3 is formed on a substrate 301 made of silicon.
02 and the gate electrode 303, a silicon oxide film 304 is formed to a thickness of 1 μm by a CVD method.
The surface of the silicon oxide film 304 is flattened by an MP (chemical mechanical polishing) method.

Next, on the silicon oxide film 304, a novolak-based resist is
After spin-coating to a thickness of nm, baking treatment is performed at 100 ° C. for 60 seconds. Next, an upper resist 306 made of an olefin-based chemically amplified resist is spin-coated to a thickness of 150 nm.

Next, as shown in FIG. 4B, a hole pattern having a designed hole diameter of 200 nm is transferred to the upper resist 306 by using an exposure apparatus. An example of the exposure conditions is shown below. Exposure device: ArF excimer laser scanner (exposure wavelength: 193 nm), reduction ratio: 1/4, numerical aperture NA: 0.7, numerical aperture ratio σ: 0.7, mask: chrome (Cr) mask.

Thereafter, by performing a developing process using an alkali developing solution such as 0.26N TMAH, only the upper layer resist 306 is patterned, and a hole 306a is formed in the upper layer resist.

Thereafter, as shown in FIG. 4C, the upper resist 306 is silylated by dropping a liquid silylating agent over the substrate 301 at room temperature for 40 seconds. As the liquid silylating agent, for example, ω, ω'-bisamin
Use an alcohol solution containing opropyl-oligodimethylsiloxane as a reactant. As a result, the upper resist 306 is silylated, and the volume of the upper resist 306 is increased with the silylation. As a result, the diameter of the hole 306a is reduced to 16 nm.

Next, as shown in FIG. 4D, silicon and oxygen are bonded to each other in the surface layer of the silylated upper resist 306 by performing dry development of the lower resist 305 using a plasma processing apparatus. Let the film thickness be 30
A silicon oxide (SiOx) layer 307 nm is formed, and the lower resist 305 is removed by etching using the silicon oxide layer 307 as a mask.
08 is formed. The following is an example of such dry development conditions. Plasma processing apparatus: TCP processing apparatus, gas and flow rate: oxygen (O ₂ ) = 80 sccm, sulfur dioxide (SO ₂ ) = 5 sccm, processing atmosphere pressure: 0.67 Pa, TCP power: 250 W, bias power: 40 W, processing time : 55 seconds.

After the resist pattern 308 is formed by the above-described CARL process, the line width measurement, the overlay accuracy measurement, and the defect inspection of the resist pattern 308 are performed. When the result of the measurement and inspection exceeds the allowable value, the resist pattern 308 is removed and the substrate is regenerated.

To remove the resist pattern 308,
In the first embodiment, by performing a series of removal steps similar to those described with reference to FIGS. 2 (2) to (4), that is, an ashing process and a subsequent cleaning process, the substrate 30 is removed.
1, the resist pattern 308 is completely removed.

As described above, after the resist pattern (308) is completely removed from the substrate 301 without leaving any resist residue as shown in FIG. 4 (5), pure rinsing is performed to dry the substrate 301. Thus, a series of resist removing steps is completed.

Next, as shown in FIG. 4 (6), a description was given using FIGS. 4 (1) to 4 (4) on a substrate from which the resist pattern 308 was completely removed without leaving a resist residue. Similarly, a resist pattern 308 is formed again. Then, line width measurement, overlay accuracy measurement, and defect inspection of the formed resist pattern 308 are performed. And
If the results of these measurements and inspections are not within the allowable values, the above-described resist removal step and the resist pattern 30
8 is performed. When it is confirmed that the results of these measurements and inspections are within the allowable range, the process proceeds to the next step.

In the next step, as shown in FIG.
Using the resist pattern 308 as a mask, the silicon oxide film 304 is etched.
Then, a hole 304a is formed. This silicon oxide film 3
For the etching of 04, methane trifluoride (CHF ₃ )
Etching using methane tetrafluoride (CF ₄ ) -based gas is performed.

In the etching of the silicon oxide film 304, the silicon oxide layer (307) forming the resist pattern 308 and the silylated upper resist 30 are formed.
6 is also etched at the same time.

After the holes 304a are formed in the silicon oxide film 304 on the substrate 301 as described above,
As shown in (8), the resist pattern (308) is removed. Here, the resist pattern (308) is completely removed from the substrate 301 by performing a series of removal steps similar to those described with reference to FIGS. 2 (2) to (4), that is, an ashing process and a subsequent cleaning process. To be removed.

According to such a method of manufacturing a semiconductor device, when the resist pattern 308 having the silicon oxide layer 307 as described with reference to FIG. To do the same as
As in the first embodiment, the increase in the throughput and the liquid L
It is possible to reliably remove the resist pattern 308 from the substrate 301 while suppressing the usage amount of the resist.

[0060]

As described above, according to the resist removing method of the present invention, when a resist partially siliconized is removed from the substrate, the resist is largely removed from the substrate by ashing or treatment using a stripping solution. After removing a portion of the resist, a silicon oxide component of the resist residue is removed by dilute hydrofluoric acid by performing a cleaning process in which dilute hydrofluoric acid treatment and ozone water treatment are alternately performed, and an organic component is removed by ozone water. Thus, the resist can be reliably removed from the substrate without leaving any residue. As a result, the substrate can be reused by removing the resist, and the production cost can be reduced. In addition, by using a spin cleaning device during the cleaning process, the cleaning process can be performed with a small amount of chemical solution. Therefore, it is possible to suppress an increase in cost and to reduce a waste liquid treatment amount.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a spin washer used in the present embodiment.

FIG. 2 is a sectional process view for describing the first embodiment.

FIG. 3 is a sectional process view for explaining a second embodiment.

FIG. 4 is a sectional process view for describing a third embodiment.

FIG. 5 is a sectional view showing a configuration of a resist pattern having a silicon oxide layer.

[Explanation of symbols]

109, 203, 307: silicon oxide layer, 110, 2
04, 308: resist pattern, 101, 301: substrate

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 2H096 AA25 HA23 HA30 LA03 LA06 LA30 5F004 AA04 AA09 BA20 BD01 DA00 DA01 DA04 DA16 DA23 DA24 DA25 DA26 DB02 DB03 DB17 DB26 EA04 EA07 EA10 EB02 5F043 BB25 BB27 CC12 CC30 CC16 DD08 DD 5F046 MA02 MA10 MA12 MA17 NA01 NA14 NA18 NA19

Claims (4)

[Claims] 1. A resist partially siliconized,
A method of removing from a substrate, wherein after performing the anneal process of the resist, performing a cleaning process of alternately repeating a dilute hydrofluoric acid process and an ozone water process on the surface of the substrate. Removal method. 2. The resist removing method according to claim 1, wherein the cleaning process is performed by using a spin cleaning device. 3. A resist partially siliconized,
A method for removing the resist from the substrate, wherein the resist is exposed to a remover to remove the resist, and thereafter, a cleaning process of alternately repeating a dilute hydrofluoric acid treatment and an ozone water treatment is performed on the surface of the substrate. Resist removal method. 4. The resist removing method according to claim 3, wherein the cleaning process is performed using a spin cleaning device.